Wafer corrosion device
By designing a liquid conduction device, liquid supply device and liquid absorbing layer for wafers, the problem that the prior art cannot achieve single-side corrosion of wafers is solved, and efficient single-side corrosion of the wafer to be corroded is achieved.
Patent Information
- Application Number
- CN202421709523.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-18
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-07-18
AI Technical Summary
The prior art cannot achieve single-side corrosion of the wafer, and conventional tank body soaking can only corrosion on both sides of the wafer.
A wafer corrosion device is designed, including a liquid conduction device, a liquid supply device and a liquid absorbing layer. The liquid conducting device realizes corrosion of the wafer's corrosion surface through the liquid conducting body and the liquid conducting tank. The liquid supply device supplies the corrosion liquid to the liquid conducting tank through the liquid conducting tube and the liquid outlet tube. The liquid suction layer covers the liquid conducting tank and diffuses the liquid to the entire corrosion surface.
One-side corrosion of the wafer is achieved, meeting the need to etch one side of the wafer during the etching process but not the other side.
Smart Images
Figure CN222851394U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of wafer fixing, and in particular to a wafer etching device. Background Art
[0002] During the wafer etching (also called corrosion) process, since part of the wafer has been peeled off, conventional tank immersion can only etch both sides of the wafer, and it is impossible to achieve the purpose of single-sided etching of the wafer. Utility Model Content
[0003] The purpose of the present application is to provide a wafer etching device, which is intended to perform single-sided etching on a wafer.
[0004] The present application provides a wafer etching device, comprising:
[0005] A liquid guiding device, comprising a liquid guiding body and a liquid guiding groove, wherein the liquid guiding body comprises a first etching surface, the first etching surface is used to etch the surface to be etched of the wafer, and the liquid guiding groove is arranged in the first etching surface of the liquid guiding body;
[0006] A liquid supply device, comprising a liquid guide tube and a liquid outlet tube, one end of the liquid outlet tube is connected to the liquid guide tube, and the other end of the liquid outlet tube is connected to the liquid guide groove;
[0007] The liquid absorbing layer covers the first corrosion surface of the liquid guiding body.
[0008] In some embodiments, the liquid supply device further comprises a liquid supply body, and the liquid guide tube and the liquid outlet tube are disposed in the liquid supply body;
[0009] The liquid guiding device is arranged around the liquid supply body, and the liquid supply body includes a second corrosion surface, and the second corrosion surface is flush with the first corrosion surface.
[0010] In some embodiments, the liquid guide tube is disposed in the liquid supply body along a first direction, the liquid guide tube includes a first end away from the second corrosion surface and a second end close to the second corrosion surface, and the first direction intersects the second corrosion surface;
[0011] The liquid outlet pipe is arranged in the liquid supply body along the second direction and includes a plurality of liquid inlets and liquid outlets. The plurality of liquid inlets are arranged around the side wall of the second end and are connected to the liquid guide pipe. The liquid outlet is connected to the liquid guide groove. The second direction is parallel to the second corrosion surface.
[0012] In some embodiments, the liquid-conducting groove comprises:
[0013] A first groove, connected to the liquid outlet and extending to the edge of the liquid guiding body;
[0014] The second groove is connected to the plurality of the first grooves.
[0015] In some embodiments, the fluid guiding device further comprises:
[0016] A liquid level control retaining wall, which is arranged around the edge of the liquid guiding body and has a liquid level control groove between the liquid guiding body and the liquid level control groove is communicated with the liquid guiding groove;
[0017] The top surface of the liquid level control retaining wall on a side close to the first corrosion surface is lower than the first corrosion surface.
[0018] In some embodiments, a liquid pump is further included, wherein a liquid outlet tube of the liquid pump is connected to an end of the liquid catheter away from the liquid outlet tube.
[0019] In some embodiments, it also includes:
[0020] The liquid storage device is used to store the liquid overflowing from the liquid level control retaining wall, and the liquid suction pipe of the liquid suction pump is connected to the liquid storage device.
[0021] In some embodiments, the liquid supply body is in the shape of a truncated cone, and the liquid supply body also includes a non-corrosion surface opposite to the second corrosion surface, the non-corrosion surface and the second corrosion surface are respectively two bottom surfaces of the truncated cone, and the area of the second corrosion surface is larger than that of the non-corrosion surface.
[0022] In some embodiments, the liquid absorbing layer also covers the second corrosion surface.
[0023] In some embodiments, the liquid-conducting body further includes a through hole, one end of which is connected to the first end of the liquid-conducting tube, and the other end of which is exposed on a surface of the liquid-conducting body away from the first corrosion surface.
[0024] The present application provides a wafer etching device, including a liquid guiding device, a liquid supply device and a liquid absorbing layer. The liquid guiding device includes a liquid guiding body and a liquid guiding groove, the liquid guiding body includes a first etching surface, the first etching surface is used to etch the surface to be etched of the wafer, and the liquid guiding groove is arranged in the first etching surface of the liquid guiding body. The liquid supply device includes a liquid guiding tube and a liquid outlet tube, one end of the liquid outlet tube is connected to the liquid guiding tube, and the other end of the liquid outlet tube is connected to the liquid guiding groove. The liquid absorbing layer covers the first etching surface of the liquid guiding body. Thus, the liquid supply device can supply the etching liquid to the liquid guiding groove through the liquid guiding tube and the liquid outlet tube, and the liquid absorbing layer covered on the first etching surface can contact the liquid in the liquid guiding groove, thereby diffusing the liquid to the entire first etching surface, and then can etch the surface to be etched of the wafer thereon, so as to achieve the purpose of single-sided etching of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.
[0026] Figure 1A A schematic diagram of a top view of a wafer etching device provided in some embodiments of the present application;
[0027] Figure 1B A schematic diagram of a three-dimensional structure of a wafer etching device provided in some embodiments of the present application;
[0028] Figure 2 Some embodiments of the present application provide Figure 1A A perspective view of the liquid supply device A area;
[0029] Figure 3 Some embodiments of the present application provide Figure 1A A front view of the cross-sectional structure of the middle liquid supply device at B-B1;
[0030] Figure 4 is a schematic diagram of the three-dimensional structure of a liquid supply device provided in some embodiments of the present application;
[0031] Figure 5 Some embodiments of the present application provide Figure 1B An enlarged schematic diagram of the structure of the central liquid guiding device at position C;
[0032] Figure 6 It is a schematic diagram of the structure of a wafer etching device provided in some embodiments of the present application. DETAILED DESCRIPTION
[0033] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.
[0034] In the description of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present application, "plurality" means two or more, unless otherwise clearly and specifically defined.
[0035] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0036] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.
[0037] In many scenarios, only one side of the wafer surface needs to be etched, while the other side surface is not etched. Based on this, the present application provides a wafer etching device for single-sided etching of a wafer.
[0038] See also Figure 1A-1B , Figure 1A A schematic diagram of a top view of a wafer etching device provided in some embodiments of the present application, Figure 1B Schematic diagram of the three-dimensional structure of a wafer etching device provided in some embodiments of the present application. Figure 2 and Figure 3 , Figure 2 Some embodiments of the present application provide Figure 1A A perspective view of the liquid supply device A area, Figure 3 Some embodiments of the present application provide Figure 1A A front view of the cross-sectional structure of the liquid supply device at B-B1.
[0039] The wafer etching device 100 includes a liquid guiding device 10, a liquid supply device 20 and a liquid absorbing layer 30. The liquid guiding device 10 includes a liquid guiding body 11 and a liquid guiding groove 12, wherein the liquid guiding body 11 includes a first etching surface 111, wherein the first etching surface 111 is used to etch the surface to be etched of the wafer, and the liquid guiding groove 12 is arranged in the first etching surface 111 of the liquid guiding body 11. The liquid supply device 20 includes a liquid guiding tube 21 and a liquid outlet tube 22, wherein one end of the liquid outlet tube 22 is connected to the liquid guiding tube 21, and the other end of the liquid outlet tube 22 is connected to the liquid guiding groove 12. The liquid absorbing layer 30 covers the first etching surface 111 of the liquid guiding body 11. Therefore, the liquid supply device 20 can supply the corroded liquid to the liquid guide groove 12 through the liquid guide tube 21 and the liquid outlet tube 22, and the liquid absorption layer 30 covered on the first corrosion surface 111 can contact with the liquid in the liquid guide groove 12, thereby diffusing the liquid to the entire first corrosion surface 111, and then corroding the surface to be corroded of the wafer thereon, thereby achieving the purpose of single-sided etching of the wafer.
[0040] The wafer in the present application may include various semiconductor devices, such as power semiconductor devices, which may specifically include insulated gate bipolar transistors (IGBT), metal oxide semiconductor field effect transistors (MOSFET), etc. In some embodiments, the surface to be etched of the wafer may be the back side of the wafer.
[0041] In some embodiments, the liquid for wet etching can be hydrofluoric acid, which can be used for surface deoxidation. The material selected for the liquid absorption layer 30 has the following characteristics: 1) the material is soft to protect the wafer from being scratched; 2) it has a certain water absorption property so that the etching liquid can wet and cover the entire plane; 3) it is resistant to acid and alkali corrosion to avoid contamination and damage to the wafer. Exemplarily, the liquid absorption layer 30 can be a dust-free cloth. In the present application, the liquid absorption layer 30 can also be selected from other materials if the above characteristics are met.
[0042] It should be noted that, since the liquid absorbing layer 30 covers the first etched surface 111, in order to show the shape of the liquid guiding device 10, it is not Figure 1A and Figure 1B The liquid-absorbing layer 30 is shown in FIG.
[0043] It is understandable that, since the first etching surface 111 is provided with the liquid guiding groove 12, the liquid absorbing layer 30 also covers the liquid guiding groove 12. When the surface to be etched of the wafer is placed on the liquid absorbing layer 30, the etching liquid absorbed by the liquid absorbing layer 30 can be used to etch the entire surface to be etched of the wafer.
[0044] In some embodiments, the liquid supply device 20 includes a liquid supply body 23, a liquid guide tube 21 and a liquid outlet tube 22, wherein the liquid guide tube 21 and the liquid outlet tube 22 are disposed in the liquid supply body 23. The liquid guide device 10 is disposed around the liquid supply body 23, and the liquid supply body 23 includes a second corrosion surface 231, and the second corrosion surface 231 is flush with the first corrosion surface 111.
[0045] Specific examples, such as Figure 1A As shown, the liquid supply body 23 is arranged at the center of the liquid guiding device 10.
[0046] Please combine Figure 4 , Figure 4 It is a schematic diagram of the three-dimensional structure of the liquid supply device provided in some embodiments of the present application.
[0047] In some embodiments, the liquid supply body 23 (or the liquid supply device 20) is in the shape of a truncated cone, and the liquid supply body 23 also includes a non-corrosion surface 232 opposite to the second corrosion surface 231, and the non-corrosion surface 232 and the second corrosion surface 231 are respectively the two bottom surfaces of the truncated cone, and the area of the second corrosion surface 231 is larger than the area of the non-corrosion surface 232.
[0048] In some embodiments, the liquid absorption layer 30 also covers the second corrosion surface 231, so the liquid absorption layer 30 can diffuse the liquid in the liquid absorption groove to the second corrosion surface 231, so that the second corrosion surface 231 can also be used to corrode the surface to be corroded of the wafer, so that the entire surface to be corroded of the wafer can be etched.
[0049] In some embodiments, Figure 2 and Figure 3 As shown, the liquid guide tube 21 is arranged in the liquid supply body 23 along the first direction Y, and the liquid guide tube 21 includes a first end 211 away from the second corrosion surface 231 and a second end 212 close to the second corrosion surface 231, and the first direction Y intersects the second corrosion surface 231. The second end 212 is located in the second corrosion surface 231.
[0050] It should be noted that Figure 2 The perspective view is mainly for showing the structure and connection relationship between the liquid guiding tube 21 and the liquid outlet tube 22, while ignoring the structure of the liquid supply body 23.
[0051] In some embodiments, the first direction Y may be perpendicular to the second etched surface 231 .
[0052] In some embodiments, Figure 3As shown, the liquid guiding body 11 further includes a through hole 110 , one end of which is connected to the first end 211 of the liquid guiding tube 21 , and the other end of which is exposed on the surface of the liquid guiding body 11 away from the first corrosion surface 111 .
[0053] In some embodiments, Figure 2 As shown, the liquid outlet pipe 22 is arranged in the liquid supply body 23 along the second direction X, and includes a plurality of liquid inlets 221 and liquid outlets 222. The plurality of liquid inlets 221 are arranged around the side wall of the second end 212 and are connected to the liquid guide pipe 21. The liquid outlets 222 are connected to the liquid guide groove 12. The second direction X is parallel to the second corrosion surface 231.
[0054] For example, eight liquid inlets 221 are arranged around the side wall of the second end 212 of the liquid guide tube 21, and eight liquid outlets 222 are connected to eight liquid guide grooves 12. The etched liquid passes through the through hole 110, the liquid guide tube 21 and the plurality of liquid outlets 22 to the plurality of liquid guide grooves 12 in sequence.
[0055] like Figure 1A As shown, the liquid guide groove 12 includes a first groove 121 and a second groove 122, the first groove 121 is connected to the liquid outlet 222 and extends to the edge of the liquid guide body 11, and the second groove 122 is connected to a plurality of the first grooves 121. In this way, the etching liquid can be diverted from the first groove 121 to the second groove 122, and at a position where the liquid guide groove 12 is not provided, the liquid absorption layer 30 can diffuse the etching liquid from the liquid guide groove 12 to a position where the liquid guide groove 12 is not provided, so that the entire surface of the liquid absorption layer 30 is soaked with the etching liquid, so as to etch the entire surface to be etched of the wafer.
[0056] Specifically, the plurality of first grooves 121 are symmetrically arranged about the center of the second corrosion surface 231 , the second grooves 122 are circularly arranged around the liquid supply device 20 , and the diameters of the plurality of second grooves 122 increase sequentially from the inside to the outside.
[0057] See also Figure 5 , Figure 5 Some embodiments of the present application provide Figure 1B Schematic diagram of the enlarged structure of the central liquid guiding device at C.
[0058] The liquid guiding device 10 further includes a liquid level control retaining wall 40, which is arranged around the edge of the liquid guiding body 11, and has a liquid level control groove 41 between the liquid guiding body 11, and the liquid level control groove 41 is connected with the liquid guiding groove 12. The top surface 42 of the liquid level control retaining wall 40 close to the first etching surface 111 is lower than the first etching surface 111, and when the amount of liquid is large, the liquid will overflow from the liquid level control retaining wall 40. Therefore, the liquid level control retaining wall 40 can control the liquid level so that the liquid level is not higher than the top surface 42 of the liquid level control retaining wall 40, so that the liquid will not submerge the other side surface of the wafer (the surface opposite to the surface to be etched), thereby protecting the other side surface from being etched.
[0059] See also Figure 6 , Figure 6 It is a schematic diagram of the structure of a wafer etching device provided in some embodiments of the present application.
[0060] The circular etching device 200 not only includes the structure described in the circular etching device 100, but also includes a liquid pump 50. The liquid pump 50 includes a liquid suction pipe 51 and a liquid outlet pipe 52. The liquid outlet pipe 52 of the liquid pump 50 is connected to an end of the liquid guiding tube 21 away from the liquid outlet pipe 22 (i.e., the first end 211). Specifically, the liquid outlet pipe 52 of the liquid pump 50 is connected to the through hole 110 of the liquid guiding device 10, so as to draw liquid to the first end 211 of the liquid guiding tube 21.
[0061] The wafer etching device 200 further includes a liquid storage device 60, which is used to store the liquid overflowing from the liquid level control baffle 40, and the liquid suction pipe 51 of the liquid suction pump 50 is connected to the liquid storage device 60. The liquid overflowing from the liquid level control baffle 40 is stored in the liquid storage device 60, and the liquid suction pump 50 pumps the liquid from the liquid storage device 60 to the liquid guide pipe 21 to the liquid guide groove 12, and finally soaks the entire liquid absorption layer 30, thereby achieving the purpose of circulating the liquid, which has a better effect on wafer etching and can also reuse the etching liquid.
[0062] The wafer etching device provided by the present application is small in size and requires less liquid (etching liquid) for operation, which can reduce cost and time when verifying a small amount. During operation, the wafer processing surface (surface to be etched) is placed flat on the liquid absorption layer 30 and acid soaking begins. After the specified time is reached, the wafer is slowly pushed out from one side a little bit, and the wafer is taken away with a silicon wafer clamp to complete the processing.
[0063] The wafer etching device provided in the embodiment of the present application includes a liquid guiding device 10, a liquid supply device 20 and a liquid absorbing layer 30. The liquid guiding device 10 includes a liquid guiding body 11 and a liquid guiding groove 12, wherein the liquid guiding body 11 includes a first etching surface 111, wherein the first etching surface 111 is used to etch the surface to be etched of the wafer, and the liquid guiding groove 12 is arranged in the first etching surface 111 of the liquid guiding body 11. The liquid supply device 20 includes a liquid guiding tube 21 and a liquid outlet tube 22, wherein one end of the liquid outlet tube 22 is connected to the liquid guiding tube 21, and the other end of the liquid outlet tube 22 is connected to the liquid guiding groove 12. The liquid absorbing layer 30 covers the first etching surface 111 of the liquid guiding body 11. Therefore, the liquid supply device 20 can supply the corroded liquid to the liquid guide groove 12 through the liquid guide tube 21 and the liquid outlet tube 22, and the liquid absorption layer 30 covered on the first corrosion surface 111 can contact with the liquid in the liquid guide groove 12, thereby diffusing the liquid to the entire first corrosion surface 111, and then corroding the surface to be corroded of the wafer thereon, thereby achieving the purpose of single-sided etching of the wafer.
[0064] The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technical personnel in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A wafer etching device, characterized in that: include: A liquid guiding device, comprising a liquid guiding body and a liquid guiding groove, wherein the liquid guiding body comprises a first etching surface, the first etching surface is used to etch the surface to be etched of the wafer, and the liquid guiding groove is arranged in the first etching surface of the liquid guiding body; A liquid supply device, comprising a liquid guide tube and a liquid outlet tube, one end of the liquid outlet tube is connected to the liquid guide tube, and the other end of the liquid outlet tube is connected to the liquid guide groove; The liquid absorbing layer covers the first corrosion surface of the liquid guiding body.
2. The wafer etching device according to claim 1, characterized in that: The liquid supply device further comprises a liquid supply body, wherein the liquid guide tube and the liquid outlet tube are arranged in the liquid supply body; The liquid guiding device is arranged around the liquid supply body, and the liquid supply body includes a second corrosion surface, and the second corrosion surface is flush with the first corrosion surface.
3. The wafer etching device according to claim 2, characterized in that: The liquid guide tube is arranged in the liquid supply body along a first direction, the liquid guide tube comprises a first end away from the second corrosion surface and a second end close to the second corrosion surface, and the first direction intersects the second corrosion surface; The liquid outlet pipe is arranged in the liquid supply body along the second direction and includes a plurality of liquid inlets and liquid outlets. The plurality of liquid inlets are arranged around the side wall of the second end and are connected to the liquid guide pipe. The liquid outlet is connected to the liquid guide groove. The second direction is parallel to the second corrosion surface.
4. The wafer etching device according to claim 3, characterized in that: The liquid guiding groove comprises: A first groove, connected to the liquid outlet and extending to the edge of the liquid guiding body; The second groove is connected to the plurality of the first grooves.
5. The wafer etching device according to claim 1, characterized in that: The liquid guiding device also includes: A liquid level control retaining wall, which is arranged around the edge of the liquid guiding body and has a liquid level control groove between the liquid guiding body and the liquid level control groove is communicated with the liquid guiding groove; The top surface of the liquid level control retaining wall on a side close to the first corrosion surface is lower than the first corrosion surface.
6. The wafer etching device according to claim 5, characterized in that: It also includes a liquid pump, wherein a liquid outlet pipe of the liquid pump is connected to an end of the liquid guide tube away from the liquid outlet pipe.
7. The wafer etching device according to claim 6, characterized in that: Also includes: The liquid storage device is used to store the liquid overflowing from the liquid level control retaining wall, and the liquid suction pipe of the liquid suction pump is connected to the liquid storage device.
8. The wafer etching device according to claim 2, characterized in that: The liquid supply body is in the shape of a truncated cone and further includes a non-corrosion surface opposite to the second corrosion surface. The non-corrosion surface and the second corrosion surface are respectively two bottom surfaces of the truncated cone, and the area of the second corrosion surface is larger than that of the non-corrosion surface.
9. The wafer etching device according to claim 2, characterized in that: The liquid absorbing layer also covers the second corrosion surface.
10. The wafer etching device according to claim 3, characterized in that: The liquid guiding body further comprises a through hole, one end of which is connected to the first end of the liquid guiding tube, and the other end of which is exposed on a surface of the liquid guiding body away from the first corrosion surface.