Packaging structure of multiphase silicon carbide module

Abstract

A packaging structure of a multiphase silicon carbide module comprises a heat dissipation substrate, a lead frame, a plurality of half-bridge modules and a packaging body. The heat dissipation substrate has a metal circuit wiring. The lead frame is coupled with the heat dissipation substrate and is provided with a power supply pin and a grounding pin. The plurality of half-bridge modules are connected in parallel between the power supply pin and the grounding pin, each half-bridge module comprises a high-side silicon carbide transistor, a low-side silicon carbide transistor and a first connecting piece, and the high-side silicon carbide transistor and the low-side silicon carbide transistor are inversely arranged at corresponding positions of the metal circuit wiring of the heat dissipation substrate; the source electrode of the high-side silicon carbide transistor is coupled with the plurality of drain electrodes of the low-side silicon carbide transistor through the first connecting sheet and the metal circuit wiring. The packaging body wraps the heat dissipation substrate, the multiple groups of half-bridge modules and part of the lead frame.

Description

Technical Field

[0001] The utility model relates to a packaging structure of a multi-phase silicon carbide module, and in particular to a packaging structure of a multi-phase silicon carbide module that packages at least two half-bridge modules in the same packaging body, which not only reduces the assembly cost but also has the effect of improving the heat dissipation of the multi-phase silicon carbide module and reducing power loss. Background Art

[0002] Silicon carbide power components have the characteristics of high temperature resistance, high voltage resistance, and low on-resistance. In addition, compared with traditional silicon power components, silicon carbide power components can significantly reduce switching losses, and the overall module area is relatively small. Therefore, silicon carbide power components are currently widely used in solar energy conversion circuits and electric vehicles. However, the current assembly process of assembling multiple single-switch half-bridge switches into a power module is complicated and time-consuming, which increases the assembly cost, and the assembly of multiple single-switch half-bridge switches is prone to assembly errors, so there is a need for improvement. Utility Model Content

[0003] The utility model aims to provide a packaging structure of a multi-phase silicon carbide module which packages at least two half-bridge modules in the same packaging body, which not only reduces the assembly cost but also improves the heat dissipation of the multi-phase silicon carbide module and reduces the power loss.

[0004] To achieve the above-mentioned purpose, the packaging structure of the multi-phase silicon carbide module of the utility model includes a heat dissipation substrate, a lead frame, a plurality of half-bridge modules and a packaging body. The heat dissipation substrate has a metal circuit wiring. The lead frame is coupled to the heat dissipation substrate and has a power pin and a ground pin. A plurality of half-bridge modules are connected in parallel between the power pin and the ground pin, and each half-bridge module includes a high-side silicon carbide transistor, a low-side silicon carbide transistor and a first connecting piece, wherein the high-side silicon carbide transistor and the low-side silicon carbide transistor are inverted and arranged at corresponding positions of the metal circuit wiring of the heat dissipation substrate, and the source of the high-side silicon carbide transistor is coupled to the drain of the low-side silicon carbide transistor through the first connecting piece and the metal circuit wiring. The packaging body covers the heat dissipation substrate, a plurality of half-bridge modules and part of the lead frame.

[0005] According to an embodiment of the present invention, the packaging structure of the present invention further includes at least one second connecting piece, and the power pin is coupled to the drain of each high-side transistor through the at least one second connecting piece and the metal circuit wiring.

[0006] According to an embodiment of the present invention, a plurality of package structures of the present invention further include at least one third connection sheet, and the ground pin is coupled to the source of each low-side transistor through the at least one third connection sheet and the metal circuit wiring.

[0007] According to one embodiment of the utility model, the packaging structure of the utility model also includes a heat sink having a first surface and a second surface opposite to the first surface, and the packaging body includes a packaging body top surface, wherein the first surface is coupled to each low-side drain through at least one first connecting plate, and the second surface is exposed on the packaging body top surface.

[0008] According to one embodiment of the present invention, the package body includes a package body bottom surface, the heat dissipation substrate is a direct bond copper (DBC) substrate, an aluminum (DBA) substrate, or an active metal brazing (AMB) substrate, and the heat dissipation substrate includes a heat dissipation surface, and the heat dissipation surface is exposed on the package body bottom surface.

[0009] According to an embodiment of the present invention, the power pin and the ground pin of the package structure of the present invention are respectively located on different sides of the package body.

[0010] According to an embodiment of the present invention, the lead frame of the package structure of the present invention includes a plurality of high-side gate pins and a plurality of low-side gate pins, and the plurality of high-side gate pins and the plurality of low-side gate pins are located on the same side of the package body.

[0011] According to one embodiment of the utility model, the number of the multiple half-bridge modules of the packaging structure of the utility model is three groups, the number of the second connecting plates is three, the number of the third connecting plates is three, and when the multi-phase silicon carbide module is a three-phase bridge inverter, the lead frame includes a U-phase pin, a V-phase pin, and a W-phase pin.

[0012] According to an embodiment of the present invention, the U-phase pin, the V-phase pin, the W-phase pin, and the ground pin of the package structure of the present invention are located on the same side of the package body.

[0013] By means of the packaging structure of the multi-phase silicon carbide module of the utility model, at least two half-bridge modules or three half-bridge modules can be packaged in the same package body, which can not only improve the conversion efficiency of the multi-phase silicon carbide module and reduce the assembly cost of the half-bridge module, but also achieve the effect of double-sided heat dissipation by exposing the heat dissipation surface of the heat dissipation substrate and the second surface of the heat dissipation plate to the package body, thereby improving the heat dissipation of the multi-phase silicon carbide module and reducing power loss.

[0014] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic plan view of an embodiment of a packaging structure of a multi-phase silicon carbide module of the present invention.

[0016] Figure 2 A cross-sectional schematic diagram of an embodiment of the packaging structure of a multi-phase silicon carbide module of the present invention.

[0017] Figure 3 A circuit diagram of an embodiment of the packaging structure of a multi-phase silicon carbide module of the present invention.

[0018] Figure 4 A top view of an embodiment of a packaging structure of a multi-phase silicon carbide module of the present invention.

[0019] Figure 5 A bottom view of an embodiment of a packaging structure of a multi-phase silicon carbide module of the present invention.

[0020] Among them, the reference numerals

[0021] Packaging structure of multiphase silicon carbide module 1 Heat dissipation substrate 10

[0022] Heat dissipation surface 11 Solder 100

[0023] Half-bridge module 20, 20a, 20b High-side transistor 21, 21a, 21b

[0024] High-side drain 211, 211a, 211b High-side source 212, 212a, 212b

[0025] High-side gate 213, 213a, 213b Low-side transistor 22, 22a, 22b

[0026] Low-side drain 221, 221a, 221b Low-side source 222, 222a, 222b

[0027] Low side gate 223, 223a, 223b First connecting piece 23, 23a, 23b

[0028] Second connecting piece 30, 30a, 30b Third connecting piece 40, 40a, 40b

[0029] Package body 50 Package body top surface 51

[0030] Package bottom 52 Heat sink 60

[0031] First surface 61 Second surface 62

[0032] Lead frame 90 Power supply pin 91

[0033] Ground pin 92 High side gate pins 93, 93a, 93b

[0034] Low side gate pins 94, 94a, 94b U phase pin 95

[0035] V phase pin 96 W phase pin 97

[0036] Metal circuit wiring 12 High-side drain wiring 121, 121a, 121b

[0037] High-side source wiring 122, 122a, 122b High-side gate wiring 123

[0038] Low-side drain wiring 124, 124a, 124b Low-side source wiring 125, 125a, 125b

[0039] Low-side gate wiring 126 Power supply wiring 127

[0040] Ground wiring 128 DETAILED DESCRIPTION

[0041] In order to better understand the technical content of the utility model, the preferred specific embodiments are described below. Figures 1 to 5 A schematic plan view, a schematic cross-sectional view, a circuit diagram, a top view and a bottom view of an embodiment of a packaging structure of a multi-phase silicon carbide module of the present invention.

[0042] like Figures 1 to 3 As shown, according to an embodiment of the present invention, the package structure 1 of the multi-phase silicon carbide module of the present invention comprises a heat dissipation substrate 10, a lead frame 90, three groups of half-bridge modules 20, 20a, 20b, three second connecting pieces 30, 30a, 30b, three third connecting pieces 40, 40a, 40b and a package body 50, wherein the package body 50 covers the heat dissipation substrate 10, the half-bridge modules 20, 20a, 20b, the second connecting pieces 30, 30a, 30b, a part of the lead frame 90, and the third connecting pieces 40, 40a, 40b, and the heat dissipation substrate 10 has a metal circuit wiring 12. The lead frame 90 is coupled to the heat dissipation substrate 10, and the lead frame 90 has a power pin 91 and a ground pin 92, wherein the power pin 91 and the ground pin 92 are respectively located on different sides of the package body 50, and the three groups of half-bridge modules 20, 20a, 20b are connected in parallel between the power pin 91 and the ground pin 92. According to a specific embodiment of the present invention, the multi-phase silicon carbide module using the packaging structure 1 of the present invention is a power inverter, a photovoltaic inverter, a three-phase bridge inverter, or a power conversion device such as a frequency converter for converting direct current into alternating current, but the present invention is not limited to the aforementioned embodiments.

[0043] like Figures 1 to 3As shown, in the present embodiment, the half-bridge modules 20, 20a, 20b include high-side transistors 21, 21a, 21b, low-side transistors 22, 22a, 22b and first connecting pieces 23, 23a, 23b, wherein the high-side transistors 21, 21a, 21b and the low-side transistors 22a, 22b are flip-chip arranged and coupled to the heat dissipation substrate 10 via solder 100. In the present embodiment, the solder 100 is sintered silver or solder paste, and the high-side transistors 21, 21a, 21b and the low-side transistors 22, 22a, 22b are all silicon carbide transistors (SiC FET), but the present invention is not limited thereto, and semiconductor field effect transistors (semiconductor field effect transistors), aluminum gallium nitride (AlGaN) / gallium nitride (GaN) high electron mobility transistors (high electron mobility transistor; HEMT) are also applicable to the present invention. It should be noted here that, Figure 3 Only the high-side transistors 21, 21a, 21b and the low-side transistors 22, 22a, 22 are n-type silicon carbide-based metal oxide semiconductor field effect transistors (SiCMOSFET) as an example for description, but the present invention does not Figure 3 The content shown is limited and is also applicable to p-type SiC MOSFET and HEMT.

[0044] like Figures 1 to 3 As shown, the high-side transistors 21, 21a, 21b include high-side drains 211, 211a, 211b and high-side sources 212, 212a, 212b, and the low-side transistors 22, 22a, 22b include low-side drains 221, 221a, 221b and low-side sources 222, 222a, 222b. The metal circuit wiring 12 includes high-side drain wiring 121, 121a, 121b, high-side source wiring 122, 122a, 122b, high-side gate wiring 123, low-side drain wiring 124, 124a, 124b, low-side source wiring 125, 125a, 125b, low-side gate wiring 126, power wiring 127, and ground wiring 128. Figures 1 to 3 As shown, the high-side sources 212, 212a, 212b are respectively coupled to the low-side drains 221, 221a, 221b via the first connecting pieces 23, 23a, 23b, the high-side source wirings 122, 122a, 122b and the corresponding low-side drain wirings 124, 124a, 124b. Specifically, as Figure 1 and Figure 3As shown, the high-side source 212 of the half-bridge module 20 is coupled to the high-side source wiring 122 via the first connecting piece 23 to the corresponding low-side drain wiring 124 and the low-side drain 221; the high-side source 212a of the half-bridge module 20a is coupled to the high-side source wiring 122a via the first connecting piece 23a to the corresponding low-side drain wiring 124a and the low-side drain 221a; the high-side source 212b of the half-bridge module 20b is coupled to the high-side source wiring 122b via the first connecting piece 23b to the corresponding low-side drain wiring 124b and the low-side drain 221b.

[0045] The three second connecting pieces 30, 30a, 30b are copper clips, which are used to connect the high-side drain electrodes 211, 211a, 211b in parallel with the power pin 91. Figures 1 to 3 As shown, in this embodiment, the second connecting piece 30 is respectively coupled to the high-side drain 211 and the high-side drain 211a by sintering silver or solder paste, and the high-side drain 211 and the high-side drain 211a are respectively coupled to the corresponding high-side drain wiring 121, 121a by sintering silver or solder paste; the second connecting piece 30a is respectively coupled to the high-side drain 211a and the high-side drain 211b by sintering silver or solder paste, and the high-side drain 211a and the high-side drain 211b are respectively coupled to the high-side drain 121, 121a by sintering silver or solder paste. The second connecting piece 30b is respectively coupled to the high-side drain 211b and the power supply wiring 127 by sintering silver or solder paste, and the high-side drain 211b and the power supply pin 91 are respectively coupled to the corresponding high-side drain wiring 121b and the power supply wiring 127 by sintering silver or solder paste, so that the high-side drain 211, 211a, 211b of the half-bridge module 20, 20a, 20b is connected in parallel with the power supply pin 91. It should be noted that according to a specific embodiment of the present invention, only one second connecting piece 30 is needed to achieve the effect of connecting the high-side drain 211, 211a, 211b of the half-bridge module 20, 20a, 20b in parallel with the power supply pin 91, and the number of the second connecting pieces 30 of the present invention is not limited to the aforementioned embodiment.

[0046] The three third connecting pieces 40, 40a, 40b are also copper clips, which are used to connect the low-side sources 222, 222a, 222b to the ground pin 92 in parallel. Figures 1 to 3As shown, in this embodiment, the third connecting piece 40 is coupled to the low-side source 222 and the low-side source 222a respectively by sintering silver or solder paste, and the low-side source 222 and the low-side source 222a are coupled to the corresponding low-side source wiring 125, 125a by sintering silver or solder paste; the third connecting piece 40a is coupled to the low-side source 222a and the low-side source 222b respectively by sintering silver or solder paste, and the low-side source 222a and the low-side source 222b are coupled to the corresponding low-side source wiring 125, 125a by sintering silver or solder paste. or solder paste respectively couples the corresponding low-side source wiring 125a, 125; the third connecting piece 40b is respectively coupled to the low-side source 222b and the ground wiring 128 through sintered silver or solder paste, and the low-side source 222b and the ground wiring 128 are respectively coupled to the low-side source wiring 125b and the ground pin 92 through sintered silver or solder paste, thereby allowing the low-side sources 222, 222a, 222b of the half-bridge modules 20, 20a, 20b to be connected in parallel with the ground pin 92. It should be noted here that according to a specific embodiment of the utility model, only at least one third connecting piece 40 is needed to achieve the effect of connecting the low-side sources 222, 222a, 222b of the half-bridge modules 20, 20a, 20b in parallel with the ground pin 92, and the number of the third connecting pieces 40 of the utility model is not limited to the aforementioned embodiment.

[0047] like Figure 2 , Figure 4 and Figure 5 As shown, the package body 50 includes a package body top surface 51 and a package body bottom surface 52. The heat dissipation substrate 10 includes a heat dissipation surface 11, which is a side of the heat dissipation substrate 10 where the high-side transistor 21 and the low-side transistor 22 are not provided, and the heat dissipation surface 11 is exposed to the package body bottom surface 52. In this embodiment, the package structure 1 of the multi-phase silicon carbide module of the utility model further includes a heat dissipation plate 60, and the heat dissipation plate 60 includes a first surface 61 and a second surface 62 opposite to the first surface 61, wherein the first surface 61 is coupled to the low-side drain 221, 221a, 221b via the third connecting piece 40a, and the second surface 62 is exposed to the package body top surface 51. According to a specific embodiment of the present invention, the heat dissipation substrate 10 and the heat dissipation plate 60 are both direct bond copper (DBC), direct bond aluminum (DBA), or active metal brazing (AMB), so the heat dissipation surface 11 and the second surface 62 are both surfaces covered with copper or aluminum, so that the package body top surface 51 and the package body bottom surface 52 of the package body 50 of the package structure 1 of the multi-phase silicon carbide module are both covered with metals with good heat dissipation properties such as copper or aluminum, thereby improving the heat dissipation efficiency of the multi-phase silicon carbide module using the package structure 1 of the present invention and reducing power loss.

[0048] In addition, although Figures 1 to 3The embodiment shown is an implementation of three sets of half-bridge modules 20, 20a, 20b, but in fact, two sets of half-bridge modules 20, 20a can also be applied to the present invention. Figure 1 and Figure 3 The three groups of half-bridge modules 20, 20a, 20b shown can become two groups of half-bridge modules by removing one of the half-bridge modules. This change is a simple modification that can be completed by a person with ordinary knowledge in the field, so the details of the implementation of the two groups of half-bridge modules 20, 20a are not repeated here.

[0049] like Figures 1 to 3 As shown, according to a specific embodiment of the present invention, the lead frame 90 further includes three high-side gate pins 93, 93a, 93b and three low-side gate pins 94, 94a, 94b to respectively couple the gates 213, 213a, 213b of the high-side transistors 21, 21a, 21b, and the gates 223, 223a, 223b of the low-side transistors 22, 22a, 22b. And when the multi-phase silicon carbide module using the package structure 1 of the present invention is a three-phase Bridge inverter, the lead frame 90 includes a U-phase pin 95, a V-phase pin 96, and a W-phase pin 97, wherein the U-phase pin 95 is coupled to the low-side drain 221, the V-phase pin 96 is coupled to the low-side drain 221a, and the W-phase pin 97 is coupled to the low-side drain 221b. In addition, in the present invention, the U-phase pin 95 , the V-phase pin 96 , the W-phase pin 97 , and the ground pin 92 are located on the same side of the package body 50 .

[0050] The packaging structure 1 of the multi-phase silicon carbide module of the present invention packages at least two half-bridge modules 20, 20a, or three half-bridge modules 20, 20a, 20b in the same packaging body 50, which can not only improve the conversion efficiency of the multi-phase silicon carbide module and reduce the assembly cost of the half-bridge module, but also achieve a double-sided heat dissipation effect by exposing the heat dissipation surface 11 of the heat dissipation substrate 10 and the second surface of the heat dissipation plate 60 to the packaging body 50, thereby improving the heat dissipation of the multi-phase silicon carbide module and reducing power loss.

[0051] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, technicians familiar with the field can make various corresponding changes and deformations based on the present invention, but these corresponding changes and deformations should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A packaging structure of a multiphase silicon carbide module, characterized in that: include: A heat dissipation substrate having a metal circuit wiring; A lead frame coupled to the heat dissipation substrate, and the lead frame has a power pin and a ground pin; A plurality of half-bridge modules are connected in parallel between the power pin and the ground pin, each of the half-bridge modules comprises a high-side silicon carbide transistor, a low-side silicon carbide transistor and a first connecting piece, wherein the high-side silicon carbide transistor and the low-side silicon carbide transistor are invertedly arranged at corresponding positions of the metal circuit wiring of the heat dissipation substrate, and a source of the high-side silicon carbide transistor is coupled to a drain of the low-side silicon carbide transistor through the first connecting piece and the metal circuit wiring; as well as A packaging body covers the heat dissipation substrate, the plurality of half-bridge modules and a portion of the lead frame.

2. The packaging structure according to claim 1, characterized in that: It also includes at least one second connecting piece, and the power pin is coupled to the drain of each of the high-side silicon carbide transistors through the at least one second connecting piece and the metal circuit wiring.

3. The packaging structure according to claim 1, characterized in that: It also includes at least one third connecting piece, and the ground pin is coupled to the source of each of the low-side silicon carbide transistors through the at least one third connecting piece and the metal circuit wiring.

4. The packaging structure according to claim 1, characterized in that: It also includes a heat sink having a first surface and a second surface opposite to the first surface. The package body includes a package body top surface, wherein the first surface is coupled to the drain of each low-side silicon carbide transistor through the first connecting piece, and the second surface is exposed on the package body top surface.

5. The packaging structure according to claim 1, characterized in that: The package body comprises a package body bottom surface, the heat dissipation substrate is a copper-clad substrate, an aluminum-clad substrate, or an active metal brazing substrate, and the heat dissipation substrate comprises a heat dissipation surface, which is exposed on the package body bottom surface.

6. The packaging structure according to claim 1, characterized in that: The power pin and the ground pin are respectively located at different sides of the package body.

7. The packaging structure according to claim 1, characterized in that: The lead frame includes a plurality of high-side grid pins and a plurality of low-side grid pins, and the plurality of high-side grid pins and the plurality of low-side grid pins are located at the same side of the package body.

8. The packaging structure according to claim 1, characterized in that: The number of the multiple half-bridge modules is three groups, the packaging structure includes three second connecting plates and three third connecting plates, and when the multi-phase silicon carbide module is a three-phase bridge inverter, the lead frame includes a U-phase pin, a V-phase pin and a W-phase pin.

9. The packaging structure according to claim 8, characterized in that: The U-phase pin, the V-phase pin, the W-phase pin, and the ground pin are located on the same side of the package body.

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