Semiconductor laser

Abstract

The utility model discloses a semiconductor laser. The semiconductor laser comprises a tube shell which comprises a base and a wall seat, the base is provided with a first mounting surface, and the wall seat is arranged on the first mounting surface of the base and is provided with a second mounting surface perpendicular to the first mounting surface; the plurality of collimation light path groups are arranged on the first mounting surface and are used for emitting a plurality of collimation light beams along a first direction parallel to the first mounting surface; the multi-path reflecting mirror group comprises a bottom reflecting mirror and a beam combining reflecting mirror which are arranged on the second mounting surface at intervals along a second direction, each reflecting mirror group is arranged corresponding to each collimation light path group, and the bottom reflecting mirror reflects the collimation light beams transmitted along the first direction to transmit the collimation light beams to the beam combining reflecting mirror along the second direction parallel to the second mounting surface; the reflecting surface of each beam combining reflecting mirror is arranged on the second mounting surface at a preset angle, so that the rear beam combining reflecting mirror is used for lifting the corresponding collimated light beam so as to cross the front beam combining reflecting mirror; and the rhombic prism is arranged on an emergent light path of the multi-path reflecting mirror group and is used for carrying out inclined compensation on each collimated light beam, so that each collimated light beam is emergent along a third direction parallel to the first mounting surface and the second mounting surface. According to the semiconductor laser provided by the invention, the size of the semiconductor laser can be effectively reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor lasers, and in particular to a semiconductor laser. Background Art

[0002] At present, most multi-single-tube semiconductor lasers use a stepped structure when combining beams, and the position where the semiconductor laser chip is placed on the bottom plate is processed into steps with a certain spacing. The main disadvantages of this solution are: 1. The processing accuracy of the parallelism of the bottom plate steps and the step spacing is high; 2. Due to the existence of the steps, the cooling water channel needs to be tilted, which increases the difficulty of bottom plate water channel processing; 3. The step height difference causes uneven heat dissipation of the semiconductor laser chip; 4. In order to increase the number of beam combining chips, the step spacing must be compressed, thereby increasing the difficulty of optical assembly and adjustment and reducing the product yield; 5. The optical path is on the same plane, and the overall volume of the laser is large.

[0003] In response to the above problems, some inventions have replaced the steps by tilting the optical path, separating the optical path of a single-tube semiconductor laser chip, and reducing the adverse effects of the steps. However, the above solution is seriously affected by the deformation of the optical path tilt angle, especially as the number of chips increases, the difficulty of optical path shaping increases significantly, and the laser volume cannot be reduced. Utility Model Content

[0004] The present application mainly provides a semiconductor laser to solve the problem of large volume of existing semiconductor lasers.

[0005] In order to solve the above technical problems, a technical solution adopted by the present application is: to provide a semiconductor laser. The semiconductor laser includes: a tube shell, including a base and a wall seat, the base has a first mounting surface, the wall seat is arranged on the first mounting surface of the base and is provided with a second mounting surface perpendicular to the first mounting surface, wherein the first mounting surface includes at least two parallel first step surfaces; a multi-channel collimated optical path group, each of which includes a plurality of laser chips sequentially arranged on each of the first step surfaces along a first direction, each of which is used to emit a plurality of collimated light beams along the first direction, the first direction being parallel to the first step surface; a multi-channel reflector group, all of which are arranged on the second mounting surface, and are arranged one-to-one with each of the collimated optical path groups, each of which is used to reflect the corresponding multi-channel collimated light beams to a plane higher than each of the first step surfaces and transmit along a second direction parallel to the first step surface, the second direction being different from the first direction.

[0006] In some embodiments, the second mounting surface includes a plurality of parallel second step surfaces, each of the reflector groups is sequentially mounted on each of the second step surfaces, and the second direction is parallel to the second step surfaces.

[0007] In some embodiments, the second mounting surface is a plane, and the collimating optical path group includes a bottom reflector and a beam combining reflector arranged on the second mounting surface at intervals along a vertical direction parallel to the second mounting surface, the bottom reflector reflects the collimated light beam transmitted along the first direction to be transmitted to the beam combining reflector along the vertical direction, and the reflecting surface of each of the beam combining reflectors is arranged on the second mounting surface at a preset angle, so that the rear beam combining reflector is used to lift the corresponding collimated light beam to pass over the front beam combining transmitting mirror;

[0008] The semiconductor laser further comprises an oblique prism, which is arranged on the outgoing light path of the multi-path reflector group and is used to perform tilt compensation on each of the collimated light beams so that each of the collimated light beams is emitted in a second direction parallel to the first mounting surface and the second mounting surface.

[0009] In some embodiments, the incident surface of the rhombus prism satisfies the following equations [1] and [2]:

[0010] ζ=90°-α / 2----------------------------------Formula [1];

[0011] sin(90°+β-δ)=n*sin(90-δ)------------Formula [2];

[0012] Among them, α is represented by the steering angle of the collimated light beam made by the reflector group on the plane parallel to the second mounting surface; β is represented by the angle at which the collimated light beam is lifted relative to the second mounting surface by the reflector group; ζ is represented by the angle between the incident surface and the collimated light beam in the plane parallel to the second mounting surface; δ is represented by the angle between the incident surface and the second mounting surface in the plane perpendicular to the second mounting surface and parallel to the optical axis; n is represented by the ratio of the refractive index of the rhombus prism to the refractive index of its surrounding environment.

[0013] In some embodiments, a reflection surface is further provided between the incident surface and the exit surface of the rhombus prism, and when each of the collimated light beams is incident on the reflection surface, it is deflected by -α or 180°-α in a plane parallel to the first mounting surface.

[0014] In some embodiments, the base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connected to one side of the bottom wall; or

[0015] The wall seat is connected to the non-edge area of ​​the bottom wall.

[0016] In some embodiments, the base includes a bottom wall having the mounting surface, and the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas, and there are multiple parallel second mounting surfaces on both sides of the wall seat, and the multi-path collimating light path group and the corresponding multi-path reflector group are symmetrically arranged on both sides of the wall seat.

[0017] In some embodiments, the semiconductor laser further includes a secondary light path reflector and a beam combining prism, wherein the beam combining prism is arranged on an outgoing light path of one path of the multi-path reflector group, and the secondary light path reflector is arranged on an outgoing light path of another path of the multi-path reflector group, and the secondary light path reflector is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism, so that the two collimated light beams are combined through the beam combining prism.

[0018] In some embodiments, the semiconductor laser further comprises a focusing lens group, wherein the focusing lens group is arranged on the optical path of the collimated light beam transmitted by the multi-path reflector group;

[0019] The emission direction of the focusing lens assembly is the same as the second direction; or

[0020] The semiconductor laser also includes a main light path reflector group, which is arranged on the light path between the multi-path reflector group and the focusing mirror group, and is used to adjust the transmission direction of the collimated light beam, wherein the emission direction of the focusing mirror group is parallel to the first direction, or the focusing mirror group is located above the multi-path collimated light path group and the emission direction of the focusing mirror group is opposite to the second direction.

[0021] In some embodiments, the tube shell also includes an upper cover connected to the base, the main light path reflector group and the focusing lens group are both arranged on the surface of the upper cover facing the mounting surface of the base, and the focusing lens group is also located above the collimating light path group.

[0022] In some embodiments, the reflector group includes a bottom reflector and a beam combining reflector spaced apart along the second mounting surface, and the collimating optical path group also includes a fast axis collimator and a slow axis collimator, wherein the fast axis collimator and the slow axis collimator are arranged on the first step surface along the first direction, and the laser output by the laser chip passes through the fast axis collimator, the slow axis collimator, the bottom reflector and the beam combining reflector in sequence; or

[0023] The fast axis collimator is arranged on the first step surface, the slow axis collimator is arranged on the second mounting surface and is located between the bottom reflector and the beam combining reflector, and the laser output by the laser chip passes through the fast axis collimator, the bottom reflector, the slow axis collimator and the beam combining reflector in sequence.

[0024] The beneficial effects of the present application are as follows: Different from the prior art, the present application discloses a semiconductor laser. By arranging a wall seat on the base, the wall seat is used to arrange a reflector group, so that the collimated light beam transmitted along the first mounting surface is turned to be transmitted in a direction parallel to the second mounting surface, the three-dimensional space above the first mounting surface is used to arrange the reflector group and even part of the optical devices in the collimated light path group, and the three-dimensional space above the first mounting surface is used to accommodate the light path, so that the overall structure of the semiconductor laser is more compact, and its spatial size and volume are reduced; multiple collimated light path groups are installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall, and is also conducive to setting the cooling water channel in the bottom wall, and the heat dissipation of each laser chip is more uniform; further, by setting the first mounting surface to include a plurality of parallel first step surfaces, the laser chip can form a high and low dislocation distribution in sequence, improve the beam density, and by sharing the same group of reflector groups and other devices, the use of lenses can be reduced, and the spatial compactness of the semiconductor laser is further improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0026] Figure 1 is a schematic structural diagram of an embodiment of a semiconductor laser provided by the present application;

[0027] Figure 2 yes Figure 1 A schematic diagram of a partial side view of the structure of a semiconductor laser shown;

[0028] Figure 3 is a schematic structural diagram of another embodiment of a semiconductor laser provided by the present application;

[0029] Figure 4 yes Figure 3 Another optical path structure schematic diagram of the semiconductor laser shown;

[0030] Figure 5 yes Figure 4 A schematic diagram of the local structure of the semiconductor laser from another perspective;

[0031] Figure 6 yes Figure 3 A schematic diagram of the optical path of the collimated light beam group emitted by the reflector group and incident on the rhombus prism provided in;

[0032] Figure 7 yes Figure 3 The schematic diagram of the structure of the rhombic prism provided in;

[0033] Figure 8 yes Figure 3 A schematic diagram of light refraction of the incident surface of the rhombic prism provided in FIG.

[0034] Fig. 9 yes Figure 3 A schematic diagram of light refraction of an incident surface of a rhombic prism viewed from above provided in an embodiment;

[0035] Fig.10 yes Figure 3 A schematic diagram of the optical path structure of another embodiment of a semiconductor laser is shown;

[0036] Fig.11 is another structural schematic diagram of a semiconductor laser provided in an embodiment of the present application;

[0037] Fig.12 yes Fig.11 A schematic structural diagram of one of the rhombic prisms provided in the embodiment;

[0038] Fig.13 yes Fig.12 A schematic diagram of the optical path when the reflecting surface of the rhombic prism provided in the figure deflects the collimated light beam by 180-α;

[0039] Fig.14 yes Fig.12 Schematic diagram of the optical path when the reflecting surface of the rhombic prism deflects the collimated light beam by -α when viewed straight on. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] The terms "first", "second", "third" in the embodiments of the present application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0042] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0043] The present application provides a semiconductor laser 100, referring to Figures 1 to 4 , Figure 1 is a schematic structural diagram of an embodiment of a semiconductor laser provided by the present application, Figure 2 yes Figure 1 Schematic diagram of the partial side view structure of the semiconductor laser shown.

[0044] The semiconductor laser 100 includes a tube shell 10, a multi-path collimating optical path group 20, a multi-path reflecting mirror group 30, a focusing mirror group 40 and an output optical fiber 50. The multi-path collimating optical path group 20, the multi-path reflecting mirror group 30 and the focusing mirror group 40 are all arranged in the tube shell 10. The focusing mirror group 40 can compress the laser beam and couple it into the output optical fiber 50 to form a laser transmitted in the optical fiber.

[0045] The tube shell 10 includes a base 12 and a wall seat 14. The base 12 and the wall seat 14 can be an integral structure or separate entities that are connected. The base 12 has a first mounting surface 120. The wall seat 14 is arranged on the first mounting surface 120 of the base 12 and has a second mounting surface 140 perpendicular to the first mounting surface 120, wherein the first mounting surface 120 includes at least two parallel first step surfaces 124. A multi-path collimated light path group 20, each of which includes a plurality of laser chips 21 sequentially arranged on each first step surface 124 along a first direction A, and each of which is used to emit a multi-path collimated light beam along a first direction A parallel to the first step surface 124; a multi-path reflector group 30, each of which is arranged on the second mounting surface 140 and corresponds to each of the collimated light path groups 20 one by one, and each of which is used to reflect the corresponding multi-path collimated light beams to a plane higher than each of the first step surfaces 124 and transmit them along a second direction B parallel to the first step surface 124, and the second direction B is different from the first direction A.

[0046] For example, the first mounting surface 120 includes two parallel first step surfaces 124, and each collimated light path group 20 includes two laser chips 21. The two laser chips 21 are respectively arranged on the two first step surfaces 124 and distributed along the first direction A, so that each collimated light path group 20 can emit two collimated light beams, and these two collimated light beams share the same reflector group 30.

[0047] By configuring the first mounting surface 120 to include a plurality of parallel first step surfaces 124, the laser chip 21 can sequentially form a high and low offset distribution, thereby improving the beam density. By sharing the same set of reflector groups 30 and other devices, the use of lenses can be reduced, thereby further improving the spatial compactness of the semiconductor laser 100.

[0048] Optionally, the first mounting surface 120 may further include three or four parallel first step surfaces 124 , and each corresponding collimated light path group 20 includes three or four equal numbers of laser chips 21 , and the collimated light beams emitted therefrom also share the same reflector group 30 .

[0049] The base 12 can be made of copper, aluminum or other heat dissipation matrix, which can improve the heat dissipation performance of the laser chip. The wall base 14 can be made of lightweight aluminum or plastic, etc., to facilitate the lightweight of the semiconductor laser 100.

[0050] The first mounting surface 120 includes a plurality of parallel first step surfaces 124. Each collimated optical path group 20 includes a corresponding plurality of laser chips 21. The laser chips 21 in the plurality of collimated optical path groups 20 are arranged in a row on the first step surfaces 124. By standardizing the distribution of the laser chips 21, the utilization efficiency of the mounting surface 120 can be improved and the size and volume of the semiconductor laser 100 can be reduced.

[0051] In this embodiment, the collimating optical path 20 includes a laser chip 21, a fast-axis collimating lens 22 and a slow-axis collimating lens 23, wherein at least the laser chip 21 and the fast-axis collimating lens 22 are directly disposed on the first mounting surface 120, and the slow-axis collimating lens 23 can be disposed on the first mounting surface 120 or the second mounting surface 140.

[0052] When the slow-axis collimator 23 is disposed on the second mounting surface 140, the collimated light beam can be deflected by the reflector group 30 and then passes through the slow-axis collimator 23, so that the wall seat 14 can be used to utilize the space above the mounting surface 120 of the base 12, and the slow-axis collimator 23 and some components in the reflector group 30 are spatially separated from the first mounting surface 120 where the laser chip 21 is located to form a three-dimensional distribution, which can greatly utilize the upper space above the first mounting surface 120, thereby effectively reducing the volume of the semiconductor laser 100.

[0053] The light beam emitted by the laser chip 21 generally exhibits an elliptical divergence characteristic, wherein one direction is called the "slow axis" with a relatively small divergence angle (eg, about 10°), and the other direction is called the "fast axis" with a larger divergence angle (possibly up to 40°).

[0054] The fast-axis collimator 22 and the slow-axis collimator 23 are key components for beam shaping and control, and complement each other. The fast-axis collimator 22 collimates the light beam in the fast-axis direction, converges or adjusts the light diverging in the fast-axis direction into a parallel light beam, reduces the fast-axis divergence angle, and thus improves the concentration and utilization of light energy; the slow-axis collimator 23 collimates the light beam in the slow-axis direction, converges or adjusts the light diverging in the slow-axis direction into a parallel light beam, reduces the slow-axis divergence angle, and thus improves the concentration and utilization of light energy; the fast-axis collimator 22 and the slow-axis collimator 23 are used in combination, and the two work together to achieve good collimation of the light beam in two dimensions, which is crucial for subsequent operations such as beam transmission, focusing, or coupling to optical fibers. This can ensure beam quality, reduce light loss, and improve the performance and efficiency of the entire semiconductor laser 100.

[0055] Furthermore, the second direction B may be perpendicular to the first direction A, or the second direction B may not be perpendicular to the first direction A, and this application does not make any specific limitation on this.

[0056] In this embodiment, Figure 2 or Figure 3 As shown, the reflector group 30 includes a bottom reflector 31 and a beam combining reflector 32 spaced apart in a vertical direction parallel to the second mounting surface 140 , wherein the bottom reflector 31 can also be disposed on the first mounting surface 120 , and the slow axis collimator 23 can be disposed between the bottom reflector 31 and the beam combining reflector 32 .

[0057] The bottom reflector 31 is fixedly mounted on the first mounting surface 120 of the base 12 and is disposed close to the second mounting surface 140 of the wall base 14 .

[0058] Optionally, the bottom reflector 31 is fixedly disposed on the second mounting surface 140 and is disposed close to the first mounting surface 120 ; or, two sides of the bottom reflector 31 are respectively fixed to the first mounting surface 120 and the second mounting surface 140 .

[0059] The bottom reflector 31 and the beam combining reflector 32 are distributed on the second mounting surface 140 along the vertical direction. The bottom reflector 31 deflects multiple collimated light beams along the first direction A to be transmitted along the vertical direction, so as to utilize the upper space of the first mounting surface 120 to arrange optical devices to achieve a three-dimensional arrangement, thereby increasing the compactness of the semiconductor laser 100 and reducing the size and volume of the semiconductor laser 100.

[0060] The semiconductor laser 100 provided in the present application is provided with a wall seat 14 on the base 12, and the wall seat 14 is used to arrange the reflector group 30, so that the collimated light beam transmitted along the first mounting surface 120 is turned to be transmitted in a direction parallel to the second mounting surface 140, and the three-dimensional space above the first mounting surface 120 is used to arrange the reflector group 30 and even part of the optical devices in the collimated light path group 20, and the three-dimensional space above the first mounting surface 120 is used to accommodate the light path, so that the overall structure of the semiconductor laser 100 is more compact, and its spatial size and volume are reduced; further, by arranging the first mounting surface 120 to include a plurality of parallel first step surfaces 124, the laser chip 21 can form a high and low staggered distribution in sequence, thereby improving the light beam density, and by sharing the same group of reflector groups 30 and other devices, the use of lenses can be reduced, and the spatial compactness of the semiconductor laser 100 is further improved.

[0061] In some embodiments, Figure 1As shown, the wall base 14 is a stepped structure, and its second mounting surface 140 includes a plurality of parallel second step surfaces 144, and each reflector assembly 30 is sequentially mounted on each second step surface 144 and arranged one-to-one with each collimated light path assembly 20, and the second direction B is parallel to the second step surface 144. The second step surfaces 144 on the same side of the wall base 14 cause the reflector assemblies 30 arranged thereon to be staggered, thereby preventing the reflector assembly 30 in front from blocking the reflector assembly 30 in the back, so that the multi-path collimated light beams emitted by each reflector assembly 30 can be transmitted along the second direction B in a plane at the same height.

[0062] The misalignment between the second step surfaces 144 makes it unnecessary to adjust the inclination angle of each emitted collimated light beam. The second direction B is parallel to the second step surface 144, which reduces the risk of tilt deformation during transmission and the difficulty of subsequent adjustment of the light beam.

[0063] In this embodiment, Figure 1 As shown, the laser output by the laser chip 21 is transmitted along a first direction A parallel to the first mounting surface 120 , transmitted along a vertical direction after passing through the bottom reflector 31 , and then transmitted along a second direction B after passing through the beam combining reflector 32 . The second direction B is parallel to the second mounting surface 140 and perpendicular to the first direction A.

[0064] In other embodiments, Figure 3 and Figure 5 As shown, the second mounting surface 140 is a plane, and each reflector group 30 is arranged corresponding to each collimating optical path group 20, and each includes a bottom reflector 31 and a beam combining reflector 32 arranged at intervals along the vertical direction on the second mounting surface 140. The bottom reflector 31 reflects the collimated light beam transmitted along the first direction A to be transmitted to the beam combining reflector 32 along the vertical direction. The reflecting surface of each beam combining reflector 32 is arranged on the second mounting surface 140 at a preset angle, so that the rear beam combining reflector 32 is used to lift the corresponding collimated light beam to pass over the front beam combining emission mirror 32; the rhombus prism 35 is arranged on the output light path of the multi-path reflector group 30, and is used to perform tilt compensation on each collimated light beam, so that each collimated light beam is emitted along the second direction B parallel to the first mounting surface 120 and the second mounting surface 140.

[0065] Each beam combining reflector 32 is located at the same height, and the first mounting surface 120 and the second mounting surface 140 are both planes. Therefore, the rear beam combining reflector 32 needs to lift the corresponding collimated light beam to pass over the front beam combining transmitting mirror 32 to avoid the front beam combining reflector 32 blocking the transmission of the collimated light beam. The collimated light beam reflected by the beam combining reflector 32 is transmitted in an inclined posture relative to the first mounting surface 120 or the second mounting surface 140.

[0066] In this embodiment, Figures 3 to 5As shown, the laser output by the laser chip 21 is transmitted along a first direction A parallel to the first mounting surface 120, and then transmitted along a vertical direction after passing through the bottom reflector 31, the vertical direction being perpendicular to the first mounting surface 120, and then lifted upward relative to the first mounting surface 120 or the second mounting surface 140 after passing through the beam combining reflector 32 to pass over the front beam combining reflector 32.

[0067] See also Figures 3 to 5 , the laser chip 21 and the fast axis collimator 22 are arranged on the first mounting surface 120 along the first direction A; Figure 4 As shown, the slow axis collimator 23 is disposed on the second mounting surface 140 and located between the bottom reflector 31 and the beam combining reflector 32. The laser output by the laser chip 21 passes through the fast axis collimator 22, the bottom reflector 31, the slow axis collimator 23 and the beam combining reflector 32 in sequence.

[0068] The optical path between the slow axis collimator 23 and the laser chip 21 is the sum of the optical path between the laser chip 21 and the bottom reflector 31 and the optical path between the slow axis collimator 23 and the bottom reflector 31. Under the condition that the spatial distance required for the slow axis collimator 23 to focus is met, that is, a certain optical path is met between the slow axis collimator 23 and the laser chip 21, the horizontal distance and spatial distance between the slow axis collimator 23 and the laser chip 21 are made smaller, which can effectively reduce the size of the required base 12 and make the size of the semiconductor laser 100 smaller; and, since the base 12 is made of a metal material that is easy to conduct heat, the small size of the base 12 can reduce the weight of the semiconductor laser 100 as a whole.

[0069] Alternatively, if Figure 1 or Figure 3 As shown, the laser chip 21, the fast axis collimator 22 and the slow axis collimator 23 are arranged on the first mounting surface 120 along the first direction A, and the laser output by the laser chip 21 passes through the fast axis collimator 22, the slow axis collimator 23, the bottom reflector 31 and the beam combining reflector 32 in sequence.

[0070] The multi-path reflector groups 30 are all arranged in a three-dimensional manner, which can help reduce the size and volume of the semiconductor laser 100, and also help to reduce its weight and improve its heat dissipation performance.

[0071] like Figure 5 As shown, each beam combining reflector 32 needs to make each collimated light beam turn a certain angle relative to the vertical direction in a plane parallel to the second mounting surface 140, and this turning angle is named as turning angle α; Figure 6As shown, it is also necessary to raise an angle β relative to the second mounting surface 140, and this raising angle is named as the raising angle β. Due to the effect of the raising angle β, when the collimated light beam is reflected from the beam combining reflector 32, it can obliquely pass over the adjacent beam combining reflector 32, so that the preceding beam combining reflector 32 will not hinder its light path transmission, and each collimated light beam can be arranged in the same angle direction and spaced up and down in the fast axis direction to form a collimated light beam group, as shown in FIG. Figure 3 As shown, it will cause the slow axis of the collimated beam to tilt (deflect).

[0072] The rhombic prism 35 has multiple functions: the first function is that since the collimated light beams emitted from each beam combining reflector 32 have a lifting angle β relative to the second mounting surface 140, the lifting angle β needs to be corrected, such as Figure 6 As shown, the collimated light beam group can be emitted in a second direction B parallel to the first mounting surface 120 and the second mounting surface 140; the second function is used to solve the problem of slow axis tilt, so that each collimated light beam with slow axis tilt can restore the slow axis to a state parallel to the first mounting surface 120 and the second mounting surface 140, so as to improve the beam combining density.

[0073] like Figure 7 As shown, it is a schematic diagram of the three-dimensional structure of the rhombus prism 35, and the rhombus prism 35 includes an incident surface S1 (a shadow surface facing the incident light) and an exit surface S2 (a surface opposite to S1); the function of solving the slow axis tilt is explained from the plane P1 parallel to the second mounting surface 140 (that is, observing the rhombus prism 35 from the front view direction), and the function of correcting the lifting angle β is explained from the plane P2 perpendicular to the second mounting surface 140 and parallel to the optical axis (that is, observing the rhombus prism 35 from the top view direction).

[0074] like Figure 8 As shown, in the plane P1, the incident surface S1 of the rhombus prism 35 and the steering angle α satisfy ζ=90-α / 2---Formula [1]; Fig. 9 As shown, in plane P2, the incident surface S1 of the rhombus prism 35 and the lifting angle β satisfy sin(90+β / 2-δ)=n*sin(90-δ)-----Formula [2]; wherein β is the lifting angle, α is the steering angle, ζ is the angle between the incident surface S1 and the optical axis in plane P1; δ is the angle between the incident surface S1 and the second mounting surface 140 in plane P2, and n is the ratio of the refractive index of the rhombus prism 35 to the refractive index of the internal gas environment when the laser is packaged.

[0075] When the incident surface S1 of the rhombus prism 35 satisfies the above relationship at the same time, when each collimated light beam is incident on the incident surface S1, the incident surface S1 can simultaneously perform tilt compensation and correction lifting, so that the slow axis of each collimated light beam is corrected and simultaneously emitted along the second direction B parallel to the first mounting surface 120 and the second mounting surface 140, thereby obtaining a closely packed collimated light beam group, thereby improving the quality of the laser light beam transmitted in the output optical fiber after convergence.

[0076] The second mounting surface 140 on the wall seat 14 is arranged through each reflector group 30, and the beam combining reflector 32 is also used to lift the corresponding collimated light beam so that the collimated light beam can pass over the front beam combining reflector 32 to avoid the front reflector group 30 blocking the collimated light beam reflected by the rear reflector group 30. By utilizing the assembly relationship between the reflector group 30 and the second mounting surface 140, the lifting angles of each collimated light beam can be kept consistent to ensure the parallelism between each collimated light beam. The rhombus prism 35 can make each collimated light beam emit along the second direction B parallel to the first mounting surface 120 and the second mounting surface 140, so as to improve the beam combining density and improve the quality of the laser light beam transmitted in the output optical fiber after convergence.

[0077] In some embodiments, Figure 5 As shown, the base 12 includes a bottom wall 121 having a first mounting surface 120 and a side wall 122 connected around the bottom wall 121, wherein the wall seat 14 may be the side wall 122 connected to one side of the bottom wall 121. By setting the side wall 122 of the base 12 as the wall seat 14, the integration of the tube shell 10 can be further improved, the space volume occupied by the wall seat 14 can be reduced, the compactness of the structure of the semiconductor sensor 100 can be further improved, and the volume of the semiconductor sensor 100 can be reduced.

[0078] Alternatively, if Figure 1 or Figure 3 As shown, the wall seat 14 is connected to the non-edge area of ​​the bottom wall 121 and is isolated from the side wall 122 of the base 12. For example, the wall seat 14 is detachably connected to the bottom wall 121, and the wall seat 14 is isolated from the side wall 122 for easy disassembly.

[0079] Optionally, the base 12 includes only the bottom wall 121 , and the wall seat 14 may be connected to a non-edge area of ​​the bottom wall 121 , or the wall seat 14 may be connected to an edge of the bottom wall 121 .

[0080] Alternatively, if Figure 1 As shown, the focusing lens assembly 40 is disposed on the optical path of the collimated light beam transmitted from the reflecting lens assembly 30; or as shown in FIG. Figure 3 As shown, the focusing lens group 40 is arranged on the optical path of the collimated light beam transmitted by the rhombus prism 35. The optical axis of the focusing lens group 40 is parallel to the second direction B, that is, the emission direction of the focusing lens group 40 is in the same direction as the second direction B, and the output optical fiber 50 emits light along the second direction B.

[0081] See also Figure 4 The semiconductor laser 100 may further include a main optical path reflecting mirror group 60, which is disposed on the optical path between the rhombus prism 35 and the focusing mirror group 40, or disposed on the optical path between the reflecting mirror group 30 and the focusing mirror group 40, and is used to adjust the transmission direction of the collimated light beam optical path, wherein the emission direction of the focusing mirror group 40 is parallel to the first direction A, or the focusing mirror group 40 is located above the multi-path collimated optical path group 20 and the emission direction of the focusing mirror group 40 is opposite to the second direction B.

[0082] The tube shell 10 also includes an upper cover (not shown) connected to the base 12. The upper cover is at least connected to the base 12 to form a closed shell. The collimating optical path group 20, the reflector group 30, the rhombus 35, the focusing lens group 40 and the main optical path reflector group 60 are all arranged in the shell. One end of the output optical fiber 50 is located in the shell and behind the focusing lens group 40. The focusing lens group 40 can compress the laser beam and couple it into the output optical fiber 50 to form a laser transmitted in the optical fiber.

[0083] The main light path reflector set 60 includes at least one reflector, and is used to change the transmission direction of the light path, and can reflect the light path to any side of the tube shell 10 , so that light can be emitted from any side of the semiconductor laser 100 .

[0084] Optionally, the laser chip 21 is arranged on the first mounting surface 120 of the base 12, the main optical path reflector group 60, the rhombus prism 35, the focusing lens group 40 and the output optical fiber 50 are arranged on the surface of the upper cover facing the first mounting surface 120, and the focusing lens group 40 is also located above the collimating optical path group 20 to fully utilize the three-dimensional space on the first mounting surface 120. The main optical path reflector group 60 can reflect the light path to the surface of the upper cover in the tube shell 10, so as to further fully utilize the internal space of the tube shell 10, further increase the compactness of the semiconductor laser 100, and reduce the overall volume. Among them, the optical axis of the focusing lens group 40 can be opposite to the second direction B, or opposite to the first direction A, so that the output optical fiber 50 can emit light from the back or side of the semiconductor laser 100.

[0085] Optionally, see Figures 11 to 14 The rhombus prism 35 can also redirect and reflect the collimated light beam. A reflection surface S3 is provided between the incident surface S1 and the exit surface S2 of the rhombus prism 35, wherein the incident surface S1 is adjacent to the exit surface S2.

[0086] Compared with the need to add a reflector ( Fig.11In this embodiment, a reflection surface S3 is set up by using the idle surface of the rhombus prism 35, which can not only reduce the number of optical components and the difficulty of component assembly and adjustment, but also, compared with the solution of setting a reflection mirror after the rhombus prism, the optical path structure can be more compact, and the volume of the semiconductor laser 100 can be effectively reduced.

[0087] Specifically, in the rhombus prism 35, when each collimated light beam is incident on the reflecting surface S3, Fig.13 and Fig.14 As shown, the reflective surface S3 deflects the collimated light beam by -α or 180°-α, and makes the collimated light beam emerge perpendicularly from the emergent surface S2.

[0088] See also Fig.10 and Fig.11 , Fig.11 1 is a schematic diagram of the structure of another embodiment of the semiconductor laser provided by the present application. In other embodiments, the base 12 includes a bottom wall 121 having a first mounting surface 120, and the wall seat 14 is a partition connected to the bottom wall 121, thereby dividing the first mounting surface 120 of the bottom wall 121 into two mounting areas, and the wall seat 14 has a second mounting surface 140 on both sides, and the wall seat 14 is symmetrically provided with a multi-channel collimating light path group 10 and a corresponding multi-channel reflector group 20 on both sides, and each group of multi-channel reflector groups 20 is provided with an oblique square prism 35 on the outgoing light path.

[0089] In other words, the two groups of laser chips 21 are distributed in the two installation areas divided by the wall seat 14, the laser output by one group of laser chips 21 is transmitted along the first direction A, and the laser output by the other group of laser chips 21 is transmitted along the direction opposite to the first direction A, and the lasers output by the two groups of laser chips 21 are each transmitted in the vertical direction after passing through the bottom reflector 31, and then each is transmitted to the rhombus prism 35 after passing through the beam combining reflector 32.

[0090] The second mounting surfaces 140 on both sides of the wall base 14 are mirror images of each other. The focusing lens group 40 can be arranged on the optical path of the collimated light beam transmitted by the rhombus prism 35 , and the optical axis of the focusing lens group 40 can be parallel to the symmetry axis of the wall base 14 .

[0091] The wall seat 14 is connected to the bottom wall 121 as a partition, which can increase the structural strength of the tube shell 10 and the base 12 to prevent beam distortion caused by deformation of the tube shell 10. In addition, the wall seat 14 can be made of lightweight materials without considering heat dissipation performance, which is beneficial to the lightweight design of the semiconductor laser 100.

[0092] The wall seat 14 can be detachably connected to the bottom wall 121, thereby facilitating the maintenance and replacement of the optical devices arranged thereon; when the wall seat 14 and the optical devices thereon are removed, the base 12 will not be deformed, thereby ensuring the quality of the laser output beam; in addition, when the optical devices are being maintained or replaced, they are kept away from the laser chip 21, which can effectively prevent the debris generated during the maintenance and replacement from damaging the laser chip 21.

[0093] The laser chips 21 on both sides of the wall seat 14 emit light in opposite directions, so that the laser chips 21 on both sides are far apart, and thermal crosstalk is not easy to occur. The heat dissipation condition of the laser chip 21 is better, which is conducive to reducing the temperature of the laser chip 21 and improving the reliability of the product. In addition, due to the symmetrical setting, the optical path of the light beam emitted by the laser chip 21 on each side to the coupling unit is similar, and the optical path difference between the two is small, which can make the coupling effect better.

[0094] Optionally, the emission direction of the focusing lens group 40 is the same as the second direction B, wherein each multi-path collimating light path group 20 and multi-path reflecting mirror group 30 corresponds to the same focusing lens group 40, or each multi-path collimating light path group 20 and multi-path reflecting mirror group 30 corresponds to the same focusing lens group 40.

[0095] Optionally, the optical axis of the focusing lens group 40 is parallel to the symmetry axis of the wall base 14, and the collimated light beams output from both sides of the wall base 14 are transmitted to the focusing lens group 40. Alternatively, there are two focusing lens groups 40, each corresponding to the collimated light beams on one side of the wall base 14, and a corresponding input optical fiber 50 is disposed behind each focusing lens group 40.

[0096] Optionally, see Fig.10 The semiconductor laser 100 also includes a secondary light path reflector 71 and a beam combining prism 72. The beam combining prism 72 is arranged on the output light path of one rhombus prism 35, and the secondary light path reflector 71 is arranged on the output light path of the other rhombus prism 35. The secondary light path reflector 71 is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism 72, so that the two collimated light beams are combined through the beam combining prism 72.

[0097] Specifically, the light beams emitted by one group of laser chips 21 are reflected by the beam combining reflector 32, and then enter one incident surface of the beam combining prism 72 through the rhombus 35; the light beams emitted by another group of laser chips 21 are reflected by the beam combining reflector 32, and then transmitted to the secondary light path reflector 71 through another rhombus 35. After passing through the secondary light path reflector 71, the incident direction is changed and the incident direction is entered to the other incident surface of the beam combining prism 72 in the same direction or in the opposite direction of the first direction A. The beam combining prism 72 combines the two light beams into one and transmits it to the focusing lens group 40.

[0098] Furthermore, the semiconductor laser 100 may also include a main light path reflector group 60, which is arranged on the light path between the rhombus prism 35 and the focusing lens group 40, and specifically can be arranged on the light path between the beam combining prism 72 and the focusing lens group 40, and is used to adjust the transmission direction of the light path of the collimated light beam after being reflected by the multi-path reflector group 30, wherein the emission direction of the focusing lens group 40 is parallel to the first direction A, or the focusing lens group 40 is located above the multi-path collimated light path group 20 and the emission direction of the focusing lens group 40 is opposite to the second direction B, and light can also be emitted from any side of the semiconductor laser 100, which will not be repeated.

[0099] Alternatively, if Figures 11 to 14 As shown, the rhombus prism 35 can also replace the secondary light path reflector 71, that is, the rhombus prism 35 corresponding to the light path can also redirect and reflect the collimated light beam, and a reflection surface S3 is further provided between the incident surface S1 and the exit surface S2 of the rhombus prism 35, wherein the incident surface S1 is adjacent to the exit surface S2. In the rhombus prism 35, when each collimated light beam is incident on the reflection surface S3, as shown in FIG. Fig.13 and Fig.14 As shown, the reflective surface S3 deflects the collimated light beam by -α or 180°-α and makes the collimated light beam emerge perpendicular to the emergent surface S2. Therefore, the optical path reflector 71 can be reduced, making the optical path structure more compact and effectively reducing the volume of the semiconductor laser 100.

[0100] Different from the prior art, the present application discloses a semiconductor laser. By arranging a wall seat on the base, the wall seat is used to arrange a reflector group, so that the collimated light beam transmitted along the first mounting surface is turned to be transmitted in a direction parallel to the second mounting surface, the three-dimensional space above the first mounting surface is used to arrange the reflector group and even part of the optical devices in the collimated light path group, and the three-dimensional space above the first mounting surface is used to accommodate the light path, so that the overall structure of the semiconductor laser is more compact, and its spatial size and volume are reduced; multiple collimated light path groups are installed on the same mounting surface, and the bottom wall of the base can be set as a flat plate with uniform thickness, which can reduce the processing accuracy requirements for the bottom wall, and is also conducive to setting the cooling water channel in the bottom wall, and the heat dissipation of each laser chip is more uniform; further, by setting the first mounting surface to include multiple parallel first step surfaces, the laser chip can form a high and low dislocation distribution in sequence, improve the beam density, and by sharing the same group of reflector groups and other devices, the use of lenses can be reduced, and the spatial compactness of the semiconductor laser is further improved.

[0101] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A semiconductor laser, characterized in that: The semiconductor laser comprises: A tube shell, comprising a base and a wall seat, wherein the base has a first mounting surface, the wall seat is arranged on the first mounting surface of the base and has a second mounting surface perpendicular to the first mounting surface, wherein the first mounting surface comprises at least two parallel first step surfaces; A multi-path collimated optical path group, each of which comprises a plurality of laser chips sequentially arranged on each of the first step surfaces along a first direction, and each of which is used to emit a plurality of collimated light beams along the first direction, wherein the first direction is parallel to the first step surface; A multi-path reflector group is arranged on the second mounting surface and is arranged one-to-one corresponding to each of the collimated light path groups. Each of the reflector groups is used to reflect the corresponding multi-path collimated light beams to a plane higher than each of the first step surfaces and transmit them along a second direction parallel to the first step surfaces, and the second direction is different from the first direction.

2. The semiconductor laser according to claim 1, characterized in that The second mounting surface includes a plurality of parallel second step surfaces, each of the reflector groups is sequentially mounted on each of the second step surfaces, and the second direction is parallel to the second step surfaces.

3. The semiconductor laser according to claim 1, characterized in that The second mounting surface is a plane, and the collimating optical path group includes a bottom reflector and a beam combining reflector which are arranged on the second mounting surface at intervals along a vertical direction parallel to the second mounting surface, and the bottom reflector reflects the collimated light beam transmitted along the first direction to be transmitted to the beam combining reflector along the vertical direction, and the reflecting surface of each beam combining reflector is arranged on the second mounting surface at a preset angle, so that the rear beam combining reflector is used to lift the corresponding collimated light beam to pass over the front beam combining transmitting mirror; The semiconductor laser further comprises an oblique prism, which is arranged on the outgoing light path of the multi-path reflector group and is used to perform tilt compensation on each of the collimated light beams so that each of the collimated light beams is emitted in a second direction parallel to the first mounting surface and the second mounting surface.

4. The semiconductor laser according to claim 3, characterized in that The incident surface of the rhombus prism satisfies the following equations [1] and [2]: ζ=90°-α / 2----------------------------------Formula [1]; sin(90°+β-δ)=n*sin(90-δ)------------Formula [2]; Among them, α is represented by the steering angle of the collimated light beam made by the reflector group on the plane parallel to the second mounting surface; β is represented by the angle at which the collimated light beam is lifted relative to the second mounting surface by the reflector group; ζ is represented by the angle between the incident surface and the collimated light beam in the plane parallel to the second mounting surface; δ is represented by the angle between the incident surface and the second mounting surface in the plane perpendicular to the second mounting surface and parallel to the optical axis; n is represented by the ratio of the refractive index of the rhombus prism to the refractive index of its surrounding environment.

5. The semiconductor laser according to claim 4, characterized in that A reflecting surface is also arranged between the incident surface and the exit surface of the rhombus prism. When each of the collimated light beams is incident on the reflecting surface, it is deflected by -α or 180°-α in a plane parallel to the first mounting surface.

6. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, and the wall seat is a side wall connected to one side of the bottom wall; or The wall seat is connected to the non-edge area of ​​the bottom wall.

7. The semiconductor laser according to claim 1, characterized in that The base includes a bottom wall provided with the mounting surface, the wall seat is a partition connected to the bottom wall, thereby dividing the mounting surface of the bottom wall into two mounting areas, and there are multiple parallel second mounting surfaces on both sides of the wall seat, and the multi-path collimating light path group and the corresponding multi-path reflector group are symmetrically arranged on both sides of the wall seat.

8. The semiconductor laser according to claim 7, characterized in that The semiconductor laser also includes a secondary light path reflector and a beam combining prism. The beam combining prism is arranged on an output light path of one path of the multi-path reflector group, and the secondary light path reflector is arranged on an output light path of another path of the multi-path reflector group. The secondary light path reflector is used to reflect the corresponding collimated light beam to an incident surface of the beam combining prism, so that the two collimated light beams are combined through the beam combining prism.

9. The semiconductor laser according to any one of claims 6 to 8, characterized in that: The semiconductor laser further comprises a focusing mirror group, which is arranged on the optical path of the collimated light beam transmitted by the multi-path reflector group; The emission direction of the focusing lens assembly is the same as the second direction; or The semiconductor laser also includes a main light path reflector group, which is arranged on the light path between the multi-path reflector group and the focusing mirror group, and is used to adjust the transmission direction of the collimated light beam, wherein the emission direction of the focusing mirror group is parallel to the first direction, or the focusing mirror group is located above the multi-path collimated light path group and the emission direction of the focusing mirror group is opposite to the second direction.

10. The semiconductor laser according to claim 9, characterized in that The tube shell also includes an upper cover connected to the base, the main light path reflector group and the focusing lens group are both arranged on the surface of the upper cover facing the mounting surface of the base, and the focusing lens group is also located above the collimating light path group.

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