Base of semiconductor laser and semiconductor laser

Abstract

The utility model provides a base of a semiconductor laser and the semiconductor laser, the base is provided with an upper surface and a lower surface which are arranged oppositely, the upper surface comprises a first mounting area, the first mounting area is provided with a plurality of mounting surfaces, and the mounting surfaces are used for mounting laser units. The distance between the mounting surface in the middle region of the first mounting region and the lower surface is smaller than the distance between the mounting surface in the peripheral region of the first mounting region and the lower surface. The heat dissipation uniformity and the heat dissipation efficiency of the semiconductor laser can be improved, and the influence of heat accumulation on the output performance of the semiconductor laser can be reduced.

Description

Technical Field

[0001] The present application relates to the field of laser technology, and in particular to a semiconductor laser base and a semiconductor laser. Background Art

[0002] At present, most semiconductor lasers on the market usually have corresponding bases for the laser units. The bases are usually arranged in a certain direction from high to low, and the heat transfer path from the laser unit on the base to the lower surface of the base also changes from long to short. Since the heat dissipation of the laser unit in the middle area will be affected by the laser units around it, this design easily causes more heat accumulation in the laser unit in the middle area, thereby making the heat distribution of the semiconductor laser uneven and affecting the overall heat dissipation performance of the semiconductor laser. Utility Model Content

[0003] The present application provides a semiconductor laser base and a semiconductor laser, which can improve the heat dissipation uniformity and heat dissipation efficiency of the semiconductor laser and reduce the influence of heat accumulation on the output performance of the semiconductor laser.

[0004] In order to solve the above technical problems, the present application provides a base for a semiconductor laser, which base is provided with an upper surface and a lower surface arranged opposite to each other, the upper surface includes a first mounting area, the first mounting area is provided with multiple mounting surfaces, the mounting surfaces are used to mount a laser unit, and the distance between the mounting surface located in the middle area of ​​the first mounting area and the lower surface is smaller than the distance between the mounting surface located in the peripheral area of ​​the first mounting area and the lower surface.

[0005] In order to solve the above technical problems, the present application further provides a semiconductor laser, which includes the above base and a plurality of laser units, and the laser units are arranged on corresponding mounting surfaces.

[0006] The beneficial effect of the present application is that the distance between the mounting surface in the middle area of ​​the first mounting area and the lower surface of the base is smaller than the distance between the mounting surface in the peripheral area of ​​the first mounting area and the lower surface of the base, which can reduce the heat transfer path between the mounting surface in the middle area of ​​the first mounting area and the lower surface of the base. Since the laser unit is mounted on the mounting surface, the laser unit in the middle area is affected by the surrounding laser units and heat accumulation will occur, and the heat dissipation efficiency is lower. Therefore, reducing the heat transfer path of the mounting surface in the middle area can improve the heat dissipation efficiency of the laser unit in the middle area, and then reduce the heat accumulation of the laser unit in the middle area, thereby improving the heat dissipation uniformity and heat dissipation efficiency of the semiconductor laser, and reducing the influence of heat accumulation on the output performance of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0008] Figure 1 is a schematic top view of a partial structure of a semiconductor laser of the present application;

[0009] Figure 2 It is a structural schematic diagram of the first embodiment of the base of the present application;

[0010] Figure 3 It is a structural schematic diagram of the second embodiment of the base of the present application. DETAILED DESCRIPTION

[0011] In the following description, specific details such as specific system structures, technologies, etc. are provided for the purpose of illustration rather than limitation, so as to provide a thorough understanding of the embodiments of the present application. However, it should be clear to those skilled in the art that the present application may also be implemented in other embodiments without these specific details. In other cases, detailed descriptions of well-known systems, devices, circuits, and methods are omitted to prevent unnecessary details from obstructing the description of the present application.

[0012] The terms "first", "second" and the like in this application are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. It should be understood that when used in this specification and the appended claims, the term "including" indicates the presence of the described features, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or their collections. It should also be understood that the terms used in this specification of the application are only for the purpose of describing a specific embodiment and are not intended to limit the application. As used in this specification of the application and the appended claims, unless the context clearly indicates otherwise, the singular forms of "one", "an" and "the" are intended to include plural forms. It should also be further understood that the term "and / or" used in this specification of the application and the appended claims refers to any combination of one or more of the items listed in association and all possible combinations, and includes these combinations.

[0013] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element through at least one other element in the middle.

[0014] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0015] With the continuous advancement of science and technology, the power of semiconductor lasers has been continuously improved. The heat dissipation problem caused by this has become a bottleneck problem restricting the further development of semiconductor lasers. The temperature increase of the laser unit will cause the performance of the semiconductor laser to decline until it completely fails. Therefore, in order to make the semiconductor laser still maintain good characteristics under high-power conditions, it is necessary to improve the semiconductor laser to optimize its heat dissipation effect on the laser unit, thereby improving the overall heat dissipation performance and output performance.

[0016] At present, most semiconductor lasers on the market usually have corresponding bases for the laser units. The bases are usually arranged in a certain direction from high to low, and the heat transfer path from the laser unit on the base to the lower surface of the base also changes from long to short. Since the heat dissipation of the laser unit in the middle area will be affected by the laser units around it, this design easily causes more heat accumulation in the laser unit in the middle area, resulting in uneven heat distribution of the semiconductor laser, affecting the overall heat dissipation performance of the semiconductor laser, and thus affecting the final output performance of the semiconductor laser.

[0017] This application first proposes a semiconductor laser base, such as Figure 1 , Figure 2 As shown, the base 10 is provided with an upper surface 11 and a lower surface 12 which are arranged opposite to each other, the upper surface 11 includes a first mounting area 200, the first mounting area 200 is provided with a plurality of mounting surfaces 110, the mounting surfaces 110 are used to mount the laser unit 13, and the distance between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 is smaller than the distance between the mounting surface 110 located in the peripheral area of ​​the first mounting area 200 and the lower surface 12.

[0018] It should be noted that the specific structural composition of the base 10 is not limited, and the base 10 at least includes a heat sink for the semiconductor laser. The heat sink has good thermal conductivity and is a component that can transfer heat from a heat source (such as the laser unit 13) to a cooling medium (such as ambient air or liquid and other refrigerants), which can reduce the risk of performance degradation or damage to components such as the laser unit 13 due to overheating. The mounting surface 110 is used to mount the laser unit 13. The first mounting area 200 on the upper surface 11 of the base 10 is provided with a plurality of mounting surfaces 110. The middle area and the peripheral area are relative. The middle area is closer to the geometric center of the first mounting area 200, and the peripheral area is closer to the edge of the first mounting area 200. There is a distance between each mounting surface 110 and the lower surface 12 of the base 10.

[0019] The beneficial effect of the above arrangement is that the distance between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 of the base 10 in this embodiment is smaller than the distance between the mounting surface 110 located in the peripheral area of ​​the first mounting area 200 and the lower surface 12 of the base 10, which can reduce the heat transfer path between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 of the base 10. Since the laser unit 13 is mounted on the mounting surface 110, the laser unit 13 located in the middle area will accumulate heat due to the influence of the surrounding laser units 13, and the heat dissipation efficiency is lower. Therefore, reducing the heat transfer path of the mounting surface 110 in the middle area can improve the heat dissipation efficiency of the laser unit 13 in the middle area, and further reduce the heat accumulation of the laser unit 13 in the middle area, so that the heat dissipation uniformity and heat dissipation efficiency of the semiconductor laser can be improved, and the influence of heat accumulation on the output performance of the semiconductor laser can be reduced.

[0020] In some embodiments, the distance between the mounting surface 110 and the lower surface 12 gradually increases from the middle area to the peripheral area.

[0021] Specifically, the distance between the mounting surface 110 and the lower surface 12 arranged in the direction from the geometric center of the first mounting area 200 to the edge of the first mounting area 200 gradually increases, that is, the distance between each mounting surface 110 and the lower surface 12 arranged in the direction from the geometric center of the first mounting area 200 to the edge of the first mounting area 200 is different and increases in sequence. Since the heat accumulation generated by the laser unit 13 affected by the surrounding laser units 13 is less and less from the middle area to the peripheral area, this arrangement facilitates the gradual increase of the heat transfer path between the mounting surface 110 and the lower surface 12 of the base 10 from the middle area to the peripheral area, thereby facilitating the improvement of the heat dissipation uniformity of the semiconductor laser.

[0022] In other embodiments, the distance between the mounting surface 110 and the lower surface 12 may be increased gradually from the middle area to the peripheral area, and the specific details are not limited. Figure 3 As shown, multiple mounting surfaces 110 are arranged on a straight line along a first direction x on a first mounting area 200 to form an array, and the distance between the mounting surface 110 and the geometric center of the array is L. A first threshold value A1 and a second threshold value A2 are set, wherein A1<A2, and the distances between the multiple mounting surfaces 110 and the lower surface 12 satisfying L<A1 are all D1, and the distances between the multiple mounting surfaces 110 and the lower surface 12 satisfying A1≤L<A2 are all D2, and the distances between the multiple mounting surfaces 110 and the lower surface 12 satisfying A2≤L are all D3, wherein D3>D2>D1.

[0023] In some embodiments, the distances between the plurality of mounting surfaces 110 and the lower surface 12 are different.

[0024] Specifically, the distance between each mounting surface 110 and the lower surface 12 is different. For example, in an application scenario, Figure 2 As shown, a plurality of mounting surfaces 110 are arranged in a straight line along a first direction x on a first mounting area 200 to form an array, and the distances from the plurality of mounting surfaces 110 to the lower surface 12 are d1, d2, d3, d4, d5, and d6, respectively. The distance from the mounting surface 110 to the geometric center of the array is L. When there are a plurality of mounting surfaces 110 with the same L, the distances between the plurality of mounting surfaces 110 and the lower surface 12 are also different, for example Figure 2 The distance d1 from the two mounting surfaces 110 to the lower surface 12 where L is equal to a is not equal to d2.

[0025] Since the laser unit 13 is arranged on the mounting surface 110, each laser unit 13 will emit a laser beam. This arrangement makes it easy for the output light beams of multiple laser units 13 to be located at different output heights, which facilitates subsequent operations such as redirecting each output light beam separately, can reduce interference between multiple output light beams, and improve the reliability of the semiconductor laser.

[0026] In some embodiments, the plurality of mounting surfaces 110 are arranged along the first direction x.

[0027] Specifically, all mounting surfaces 110 on the upper surface 11 are arranged along a first direction x on the upper surface 11 , and in the first direction x, the distance between the mounting surfaces 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 is smaller than the distance between the mounting surfaces 110 located in the peripheral area of ​​the first mounting area 200 .

[0028] The beneficial effect of the above-mentioned arrangement is that the mounting surface 110 is arranged along the first direction x, which makes it easy for the multiple laser units 13 installed on the mounting surface 110 to be arranged along the first direction x. Therefore, this arrangement makes it easy to adjust the arrangement of the output light beams of the multiple laser units 13 and reduce the interference between the multiple output light beams. For example, it is easy to arrange the output light beams of the multiple laser units 13 along the first direction x, so it is easy to subsequently add other optical elements to perform subsequent operations such as redirecting and integrating the output light beams of the multiple laser units 13, that is, it is easy to improve the simplicity of the overall structural design.

[0029] In some embodiments, the mounting surfaces 110 are arranged in a straight line along the first direction x.

[0030] Specifically, all the mounting surfaces 110 on the upper surface 11 are arranged on a straight line along the first direction x on the upper surface 11. This arrangement has a simple structure, is easy to produce and assemble, and can reduce the complexity of the production process.

[0031] The beneficial effect of this arrangement is that all mounting surfaces 110 are arranged in a straight line along the first direction x, which can reduce the complexity of the production process; the distance between each mounting surface 110 and the lower surface 12 is different, which makes it easy to make the light beams of multiple laser units 13 located at different emission heights, which can reduce the interference between the multiple light beams and improve the reliability of the semiconductor laser; and the distance between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 is smaller than the distance between the mounting surface 110 located in the peripheral area of ​​the first mounting area 200 and the lower surface 12, which can improve the heat dissipation efficiency of the laser unit 13 located in the middle area, reduce its heat accumulation, improve the overall heat dissipation uniformity of the semiconductor laser, and thus improve the output performance of the semiconductor laser.

[0032] In other embodiments, the mounting surfaces may also be arranged alternately along the first direction, which is not specifically limited.

[0033] In some embodiments, the mounting surface 110 is disposed parallel to the lower surface 12 .

[0034] Specifically, each mounting surface 110 is parallel to the lower surface 12 of the base 10 , and has a simple structure, which can reduce production complexity.

[0035] For example, in one application scenario, when the base 10 is placed on a horizontal plane and the lower surface 12 is parallel to the horizontal plane, the mounting surface 110 is parallel to the lower surface 12 to facilitate the setting of the laser unit 13 and to facilitate the horizontal setting of the laser unit 13, thereby improving the position stability of the laser unit 13.

[0036] In other embodiments, the plane where at least part of the installation surface is located can be arranged to intersect with the plane where the lower surface is located according to usage requirements, and there is no specific limitation.

[0037] In other embodiments, the mounting surface may not be parallel to the lower surface. For example, the mounting surface may be an uneven curved surface, etc., which is not specifically limited.

[0038] The present application further proposes a semiconductor laser, which includes the above-mentioned base 10 and a plurality of laser units 13 , wherein the laser units 13 are arranged on corresponding mounting surfaces 110 .

[0039] The specific implementation and working principle of the base 10 can be found in the above embodiments, which will not be described in detail here.

[0040] The arrangement of multiple laser units 13 is convenient for improving the overall power of the semiconductor laser. The laser unit 13 is used to emit a laser beam. The laser unit 13 is arranged on the corresponding mounting surface 110, which is convenient for fixing the position of the laser unit 13. The distance between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 of the base 10 is smaller than the distance between the mounting surface 110 located in the outer peripheral area of ​​the first mounting area 200 and the lower surface 12 of the base 10, which can reduce the heat transfer path between the mounting surface 110 located in the middle area of ​​the first mounting area 200 and the lower surface 12 of the base 10. Since the laser unit 13 is installed on the mounting surface 110, the laser unit 13 located in the middle area is affected by the surrounding laser units 13 and heat accumulation will occur, and the heat dissipation efficiency is lower. Therefore, reducing the heat transfer path of the mounting surface 110 in the middle area can improve the heat dissipation efficiency of the laser unit 13 in the middle area, and then reduce the heat accumulation of the laser unit 13 in the middle area, so that the heat dissipation uniformity and heat dissipation efficiency of the semiconductor laser can be improved, and the influence of heat accumulation on the output performance of the semiconductor laser can be reduced.

[0041] In some embodiments, the upper surface 11 of the base 10 further includes a second mounting area 300 , and the semiconductor laser further includes a plurality of reflectors 20 , which are mounted in the second mounting area 300 and located on the light output path of the corresponding laser unit 13 .

[0042] Specifically, the outgoing light beam of the laser unit 13 is incident on the corresponding reflector 20 along its outgoing light path, and the reflector 20 reflects the light beam, and the reflected light beam is emitted along the outgoing light path of the reflector 20; in the first installation area 200, since there are differences in the distances from the multiple installation surfaces 110 used to install the multiple laser units 13 to the lower surface 12, a plurality of installation bosses with height differences will be formed in the first installation area 200.

[0043] The reflector 20 corresponding to the laser unit 13 is located on the light output path of the corresponding laser unit 13, and the reflector 20 is installed in the second installation area 300 and is located on the light output path of the laser unit 13, so that there is no obstruction on the output light path of the reflector 20, and it is convenient to reduce the blocking or interference of the laser light beam emitted from the reflector 20 by the multiple mounting bosses corresponding to the multiple mounting surfaces 110 of the multiple laser units 13, thereby simplifying the subsequent optical design and reducing the complexity of the production design.

[0044] In some embodiments, the second installation area 300 of the base 10 forms a side wall, and a plurality of reflectors 20 are fixedly arranged on a side of the side wall close to the light output path of the laser unit 13 , so as to facilitate fixed installation of the reflectors 20 .

[0045] In some embodiments, the reflector 20 is set at an angle with the light output path, so as to facilitate the setting of the incident light path and the output light path of the reflector 20 at an angle. The direction of the output light path of the reflector 20 can be adjusted by adjusting the angle between the reflector 20 and the corresponding light output path of the laser unit 13, without specific limitation.

[0046] In some embodiments, Figure 2 As shown, the distance between the upper surface 131 of the laser unit 13 closer to the middle area and the lower surface 12 of the base 10 is smaller than the distance between the mounting surface 110 of the laser unit 13 closer to the peripheral area and the lower surface 12 of the base 10.

[0047] The beneficial effect of this arrangement is that it is convenient to locate the light output paths of the laser unit 13 at different heights, and it is convenient to reserve setting space for the reflector 20 corresponding to each light output path, thereby reducing the risk of mutual interference among the output light paths of multiple reflectors 20. For example, this arrangement can facilitate the arrangement of multiple reflectors 20 arranged in a straight line along the first direction x and interference between the output light paths is not likely to occur, thereby not only facilitating subsequent operations such as spatial beam combining of the output light paths of the multiple reflectors 20, but also arranging the multiple reflectors 20 in a straight line along the first direction x saves space, simplifies the light path design, and reduces costs.

[0048] In other embodiments, the reflector may be replaced with other optical elements according to the requirements of the optical path design, which is not specifically limited.

[0049] In some embodiments, the outgoing light paths of the multiple reflectors 20 are arranged in parallel.

[0050] Specifically, the outgoing light paths of the reflectors 20 are parallel and do not overlap (i.e., they are arranged at intervals). This reduces the risk of interference between the multiple outgoing light paths and facilitates subsequent operations such as spatial beam combining of the outgoing light paths of the multiple reflectors 20, thereby simplifying the subsequent light path design and improving the simplicity of the structure.

[0051] In some embodiments, the angle between the outgoing light path and the incident light path of the reflector 20 is 90 degrees. In other embodiments, the angle can be adjusted according to the size requirements of the semiconductor laser, which will not be described in detail here.

[0052] In some embodiments, the semiconductor laser further includes a collimator lens, which is disposed on the light output path of the corresponding laser unit 13 and located between the corresponding laser unit 13 and the corresponding reflector 20 .

[0053] The collimator can be used to reduce the divergence angle of the laser beam emitted by the laser unit 13, improve the directionality of the laser beam, and converge the laser beam emitted by the laser unit 13 into a nearly parallel beam. The collimated laser beam has a smaller divergence angle and is easier to control, which can simplify the optical design of the subsequent parts and improve the output quality of the laser beam.

[0054] In some embodiments, the semiconductor laser also includes multiple fast-axis collimating lenses 30 and multiple slow-axis collimating lenses 40. The multiple fast-axis collimating lenses 30 are arranged on the light-emitting side of the corresponding laser unit 13 and on the corresponding light-emitting optical path; the multiple slow-axis collimating lenses 40 are located on the corresponding light-emitting optical path and are arranged between the corresponding fast-axis collimating lenses 30 and the corresponding reflecting mirrors 20.

[0055] The fast-axis collimator 30 can collimate the laser beam emitted by the corresponding laser unit 13 in the fast-axis direction to improve the fast-axis quality of the laser beam. The fast-axis collimator 30 can be bonded and fixed to the light-emitting side of the corresponding laser unit 13 with UV glue; the slow-axis collimator 40 is arranged on the light-emitting side of the fast-axis collimator 30 to collimate the laser beam after being collimated by the fast-axis collimator 30 in the slow-axis direction. The laser beam after fast-axis collimation and slow-axis collimation is a parallel beam, which is convenient for subsequent operations such as reflection and redirection of the laser beam.

[0056] By first collimating the fast axis, the divergence of the laser beam can be significantly reduced, and the energy of the laser beam can be more concentrated. Then, by collimating the slow axis, the beam quality can be further improved, making the final laser beam more concentrated and uniform. Furthermore, by collimating in steps, the size and shape of the laser beam can be more accurately controlled, thereby easily obtaining a higher quality laser beam.

[0057] In some embodiments, the slow-axis collimating mirror 40 is disposed on a corresponding mounting surface 110 of a corresponding laser unit 13 .

[0058] This arrangement facilitates the placement of the slow axis collimator 40 on the light output path of the corresponding laser unit 13 and has a simple structure.

[0059] In some embodiments, the semiconductor laser further includes a focusing lens 50 , which is disposed on an outgoing light path of the plurality of reflection mirrors 20 .

[0060] The focusing lens 50 facilitates focusing the outgoing light beams from the multiple reflectors 20, thereby facilitating the semiconductor laser to finally output a high-quality laser beam.

[0061] In some embodiments, the semiconductor laser further includes an optical fiber 60 , and the laser beam focused by the focusing lens 50 enters the optical fiber 60 for transmission.

[0062] Different from the prior art, in the present application, the distance between the mounting surface in the middle area of ​​the first mounting area and the lower surface of the base is smaller than the distance between the mounting surface in the peripheral area of ​​the first mounting area and the lower surface of the base, which can reduce the heat transfer path between the mounting surface in the middle area of ​​the first mounting area and the lower surface of the base. Since the laser unit is mounted on the mounting surface, the laser unit in the middle area is affected by the surrounding laser units and heat accumulation will occur, and the heat dissipation efficiency is lower. Therefore, reducing the heat transfer path of the mounting surface in the middle area can improve the heat dissipation efficiency of the laser unit in the middle area, and further reduce the heat accumulation of the laser unit in the middle area. Therefore, the heat dissipation uniformity and heat dissipation efficiency of the semiconductor laser can be improved, and the influence of heat accumulation on the output performance of the semiconductor laser can be reduced.

[0063] It is worth noting that the drawings in this article are only intended to illustrate the structural relationship and connection relationship of the product of the present application, and do not limit the specific structural dimensions of the product of the present application.

[0064] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A semiconductor laser base, characterized in that: The base is provided with an upper surface and a lower surface arranged opposite to each other, the upper surface includes a first mounting area, the first mounting area is provided with a plurality of mounting surfaces, the mounting surfaces are used to mount the laser unit, and the distance between the mounting surface located in the middle area of ​​the first mounting area and the lower surface is smaller than the distance between the mounting surface located in the peripheral area of ​​the first mounting area and the lower surface.

2. The base according to claim 1, characterized in that: From the middle area to the peripheral area, the distance between the mounting surface and the lower surface gradually increases.

3. The base according to claim 1, characterized in that: The plurality of mounting surfaces have different distances from the lower surface.

4. The base according to any one of claims 1 to 3, characterized in that: The plurality of mounting surfaces are arranged along a first direction.

5. The base according to claim 1, characterized in that: The mounting surface is arranged parallel to the lower surface.

6. A semiconductor laser, characterized in that: include: The base according to any one of claims 1 to 5; A plurality of laser units are arranged on the corresponding mounting surfaces.

7. The semiconductor laser according to claim 6, characterized in that The upper surface further includes a second mounting area, and the semiconductor laser further includes: A plurality of reflectors are installed in the second installation area and are located on the light output path of the corresponding laser unit.

8. The semiconductor laser according to claim 7, characterized in that The outgoing light paths of the multiple reflectors are arranged in parallel.

9. The semiconductor laser according to claim 7, characterized in that: Also includes: A plurality of fast axis collimating lenses are arranged on the light-emitting side of the corresponding laser unit and located on the corresponding light-emitting optical path; A plurality of slow axis collimating mirrors are located on the corresponding light-emitting optical paths and are arranged between the corresponding fast axis collimating mirrors and the corresponding reflecting mirrors.

10. The semiconductor laser according to claim 7, characterized in that Also includes: The focusing lens is arranged on the outgoing light paths of the multiple reflectors.

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