Anti-static discharge protection device

Abstract

The present disclosure relates to an anti-electrostatic discharge protection device comprising: at least one first rectifying element comprising an anode connected to a first terminal and a cathode connected to a first node of the device; at least one second rectifying element comprising an anode connected to a second node of the device and a cathode connected to the first terminal; and at least one Zener diode or at least one Porcley diode connected in series with the capacitive element between the first node and the second node.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority to French patent application No. 23 / 04475, filed on May 4, 2023, entitled “Dispositif de protection contredes déchargeséelectrostatiques,” the contents of which are hereby incorporated by reference to the maximum extent permitted by law. Technical Field

[0003] The present disclosure generally relates to an electronic device, and more particularly, to an anti-electrostatic discharge protection device. Background Art

[0004] In an integrated circuit or electronic component subjected to electrostatic discharge, electrostatic discharge may have harmful effects, which may cause irreversible degradation of all or part of its components. As a result of electrostatic discharge, the integrated circuit or electronic component may suffer significant failure or even fail to work at all. In some cases, it may be necessary to replace the defective circuit or component, which may adversely affect the reliability of the electrical appliance in which such circuit or component is integrated.

[0005] To prevent the harmful consequences of electrostatic discharge, integrated circuits and electronic components may include protection devices. However, existing protection devices against electrostatic discharge have various disadvantages. In particular, existing devices are difficult to adapt to applications where they are required to protect components or circuits biased by a voltage of about several volts in nominal operation from electrostatic discharge, and they are required to resist voltages much higher than their nominal biasing (e.g., DC voltages of about tens of volts) in the event of a short circuit. Utility Model Content

[0006] There is a need to improve existing ESD protection devices. In particular, it is desirable to provide an ESD protection device that can better coordinate the aspects of short circuit resistance and ESD protection.

[0007] To this end, an embodiment provides an anti-electrostatic discharge protection device, comprising:

[0008] at least one first rectifying element including an anode connected to a first terminal and a cathode connected to a first node of the device;

[0009] at least one second rectifying element including an anode connected to the second node of the device and a cathode connected to the first terminal; and

[0010] At least one Zener diode or at least one Shockley diode is connected in series with the capacitive element between the first node and the second node.

[0011] According to an embodiment, the first rectifying element and the second rectifying element are diodes.

[0012] According to an embodiment, each of the first rectifying element and the second rectifying element includes a thyristor and a diode coupling an anode gate of the thyristor to a cathode of the thyristor.

[0013] According to an embodiment, the capacitive element is a capacitor.

[0014] According to an embodiment, the device comprises a single first rectifying element and a single second rectifying element, the device further comprising:

[0015] a third rectifying element including an anode connected to the second terminal and a cathode connected to the first node; and

[0016] The fourth rectifying element includes an anode connected to the second node and a cathode connected to the second terminal.

[0017] According to an embodiment, the second terminal is a terminal to which a reference potential is applied.

[0018] According to an embodiment, the device comprises at least two branches, each branch comprising a single first rectifying element, a single second diode and a single first terminal which is different from the first rectifying elements, the second rectifying elements and the first terminals of the other branches.

[0019] According to an embodiment, one of the first terminals is connected to a terminal to which a reference potential is applied.

[0020] According to an embodiment, the at least one Zener diode or the at least one Shockley diode is a single Zener diode.

[0021] According to an embodiment, the Zener diode includes an anode connected to the third node and a cathode connected to the first node, and the capacitive element includes a first terminal connected to the third node and a second terminal connected to the second node.

[0022] According to an embodiment, the Zener diode comprises an anode connected to the second node and a cathode connected to a third node, and the capacitive element comprises a first terminal connected to the third node and a second terminal connected to the first node.

[0023] According to an embodiment, the at least one Zener diode or the at least one Shockley diode is a single Shockley diode.

[0024] According to an embodiment, the at least one Zener diode or the at least one Shockley diode comprises at least two Zener diodes or at least two Shockley diodes.

[0025] According to an embodiment, the first terminal and the second terminal are intended to be connected to terminals of a connector, such as a Type-C USB connector.

[0026] An embodiment provides an electronic device, preferably a smart phone, a connected object, a touchpad or a Type-C USB cable, which includes at least one anti-electrostatic discharge protection device as described.

[0027] According to an embodiment, a method includes receiving a high power supply voltage at a first terminal of an electrostatic discharge protection device. The first terminal is coupled to a cathode of a first rectifying element and an anode of a second rectifying element. The method includes receiving a low power supply voltage at a second terminal of the electrostatic discharge device, the first terminal being coupled to a cathode of a third rectifying element and an anode of a fourth rectifying element. The method includes receiving an overvoltage between the first terminal and the second terminal, the overvoltage corresponding to a voltage difference that is higher than the difference between the high power supply voltage and the low power supply voltage under normal operating conditions. The method includes: during an overvoltage event, charging a capacitor via a first diode, the first diode having an anode coupled to a first plate of the capacitor and a cathode coupled to cathodes of the second rectifying element and the fourth rectifying element. The capacitor has a second terminal, the second terminal being separated from the first terminal by a dielectric material and coupled to anodes of the first rectifying element and the third rectifying element.

[0028] According to an embodiment, a device includes a first node, a second node, and a pair of first diodes coupled between the first node and the second node. The device includes a pair of second diodes coupled between the first node and the second node and a capacitor and a third diode coupled in series between the first node and the second node. The capacitor includes a first terminal coupled to the first node and a second terminal coupled to the third diode and separated from the first terminal by a dielectric material. The device includes a first voltage supply terminal coupled between the first diodes.

[0029] An embodiment provides a device comprising: a first node; a second node; one or more first terminals; at least one first rectifying element comprising an anode connected to the first terminal and a cathode connected to the first node; at least one second rectifying element comprising an anode connected to the second node and a cathode connected to the at least one first terminal; and at least one Zener diode or at least one Shockley diode connected in series with a capacitive element between the first node and the second node, wherein the capacitive element is a capacitor, the capacitor comprising a first conductive electrode and a second conductive electrode, the second conductive electrode being separated from the first conductive electrode by a dielectric material.

[0030] According to an embodiment, the first rectifying element and the second rectifying element are diodes.

[0031] According to an embodiment, each of the first rectifying element and the second rectifying element includes a thyristor and a diode coupling an anode gate of the thyristor to a cathode of the thyristor.

[0032] According to an embodiment, the device includes: a second terminal; a single first rectifying element; a single second rectifying element; a third rectifying element, which includes an anode connected to the second terminal and a cathode connected to the first node; and a fourth rectifying element, which includes an anode connected to the second node and a cathode connected to the second terminal.

[0033] According to an embodiment, the second terminal is a terminal to which a reference potential is applied.

[0034] According to an embodiment, the arrangement comprises at least two branches, each branch comprising a single first rectifying element, a single second diode and a single first terminal, which is different from the first rectifying elements, the second rectifying elements and the terminals of the other branches.

[0035] According to an embodiment, the arrangement comprises a third terminal to which a reference potential is applied, wherein one of the first terminals is connected to the third terminal.

[0036] According to an embodiment, the at least one Zener diode or the at least one Shockley diode is a single Zener diode.

[0037] According to an embodiment, the arrangement comprises a third node, wherein the Zener diode comprises an anode connected to the third node and a cathode connected to the first node, and the capacitive element comprises a first terminal connected to the third node and a second terminal connected to the second node.

[0038] According to an embodiment, the Zener diode comprises an anode connected to the second node and a cathode connected to a third node, and the capacitive element comprises a first terminal connected to the third node and a second terminal connected to the first node.

[0039] According to an embodiment, the at least one Zener diode or the at least one Shockley diode is a single Shockley diode.

[0040] According to an embodiment, the at least one Zener diode or the at least one Shockley diode comprises at least two Zener diodes or at least two Shockley diodes.

[0041] According to an embodiment, the first terminal and the second terminal are configured to be connected to terminals of a Type-C USB connector.

[0042] According to an embodiment, the device comprises a smartphone, a connected object, a touchpad, or a Type-C USB cable.

[0043] An embodiment also provides a device comprising: a first node; a second node; a pair of first diodes coupled between the first node and the second node; a pair of second diodes coupled between the first node and the second node; a capacitor and a third diode coupled in series between the first node and the second node, wherein the capacitor comprises a first terminal coupled to the first node and a second terminal coupled to the third diode and separated from the first terminal by a dielectric material; and a first voltage supply terminal coupled between the first diodes.

[0044] According to an embodiment, the first diode is a Zener diode.

[0045] According to an embodiment, the third diode is a Schottky diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] The above features and advantages and other features and advantages will be described in detail in the remainder of the disclosure of specific embodiments, which is presented in an illustrative and non-limiting manner with reference to the accompanying drawings, in which:

[0047] Figure 1 is an electrical diagram showing an example of a commonly used anti-static discharge protection device;

[0048] Figure 2 yes Figure 1 The current-to-voltage characteristics of the device;

[0049] Figure 3 is an electrical diagram showing an example of an anti-electrostatic discharge protection device according to an embodiment;

[0050] Figure 4 yes Figure 3 The current-to-voltage characteristics of the device;

[0051] Figure 5 is an electrical diagram showing another example of an anti-electrostatic discharge protection device according to an embodiment;

[0052] Figure 6 is an electrical diagram showing another example of an anti-electrostatic discharge protection device according to an embodiment;

[0053] Figure 7 is an electrical diagram showing another example of an anti-electrostatic discharge protection device according to an embodiment; and

[0054] Figure 8 is an electrical diagram showing another example of an anti-electrostatic discharge protection device according to an embodiment. DETAILED DESCRIPTION

[0055] In the various drawings, similar features are identified by similar reference numerals. In particular, common structural and / or functional features in various embodiments may have the same reference numerals and may be arranged with the same structure, dimensions, and material properties.

[0056] For the sake of clarity, only the steps and elements that are helpful for understanding the described embodiments are illustrated and described in detail. Specifically, the components or integrated circuits that may be protected from electrostatic discharge by the device of the present disclosure will not be described in detail, and the described embodiments are compatible with the components or integrated circuits that are usually protected from electrostatic discharge.

[0057] Unless otherwise specified, when two elements are referred to as being connected together, this means a direct connection without any intermediate elements except conductors, and when two elements are referred to as being coupled together, this means the two elements may be connected or they may be coupled via one or more other elements.

[0058] In the following description, when referring to terms defining absolute positions (such as terms "edge", "rear / back", "top", "bottom", "left", "right", etc.), or terms defining relative positions (such as terms "above", "below", "upper", "lower", etc.), or terms defining directions (such as terms "horizontal", "vertical", etc.), unless otherwise specified, they refer to the orientation of the drawings.

[0059] Unless otherwise specified, “around,” “approximately,” “substantially,” and “about” mean plus or minus 10%, preferably plus or minus 5%.

[0060] Figure 1 is an electrical diagram showing an example of a commonly used anti-electrostatic discharge protection device 100 .

[0061] In the example shown, the device 100 comprises four diodes 101, 103, 105 and 107. More specifically, Figure 1 In the example shown, diode 101 includes an anode electrode or terminal connected to terminal 109 and a cathode electrode or terminal connected to an internal node 111 of device 100. In this example, diode 103 includes an anode electrode or terminal connected to another internal node 113 (different from internal node 111) of device 100, and a cathode electrode or terminal connected to terminal 109. In addition, diode 105 includes an anode electrode or terminal connected to another terminal 115 (different from terminal 109) and a cathode electrode or terminal connected to internal node 111, and diode 107 includes an anode electrode or terminal connected to internal node 113 and a cathode electrode or terminal connected to terminal 115.

[0062] The diodes 101, 103, 105 and 107 of the device 100 are, for example, identical to each other within manufacturing variations. For example, each diode 101, 103, 105, 107 exhibits a breakdown voltage of approximately 22V.

[0063] Terminal 109 is intended to be connected to an input terminal, an output terminal or an input-output terminal of a connector, an integrated circuit or an electronic component to be protected from the influence of electrostatic discharge, for example. Terminal 109 is suitable for connecting to a terminal for receiving and / or transmitting a digital or analog signal, for example. In nominal operation, terminal 109 is applied with a voltage lower than or equal to 5V, for example. For example, terminal 109 is intended to be connected to a "SBU1", "SBU2", "CC1" or "CC2" communication terminal or pin of a plug or socket of a Type-C USB connector (USB-C). The plug or socket, for example, forms a part of a cable or a part of an electronic device, such as a mobile phone, a smart phone, a connection object, a touch pad, etc.

[0064] Terminal 115 is, for example, a terminal to which a reference potential is applied, such as ground. For example, in the case where terminal 109 is intended to be connected to a Type-C USB plug or socket, terminal 115 is intended to be connected to a ground terminal or pin "GND" of the plug or socket.

[0065] In the example shown, the ESD protection device 100 further includes a diode 117, such as a Zener diode, which couples the internal node 111 to the internal node 113. More specifically, Figure 1 In the example shown, diode 117 includes an anode electrode or terminal connected to internal node 113 and a cathode electrode or terminal connected to internal node 111 .

[0066] The diode 117 of the device 100 is, for example, sized so that when the terminal 109 is applied with its nominal operating voltage, the diode is in an open state (i.e., non-conducting). Further, the size of the diode 117 is set so that the diode is in an open state in the event of a short circuit. In the case where the terminal 109 is intended to be connected to a terminal or pin that forms part of the Type-C USB connector, such a short circuit may, for example, occur between a terminal or pin connected to the terminal 109 and a power supply terminal or pin "Vbus" adjacent to the terminal. For example, in the case where the terminal 109 is intended to be applied with a nominal voltage less than or equal to 5V and may be subjected to a voltage in the range of 16V to 22V (e.g., approximately 20V) in the event of a short circuit, the diode 117 has, for example, a reverse voltage threshold that is approximately equal to 22V.

[0067] In the device 100 , the diodes 101 , 103 , 105 and 107 have a smaller capacitance, for example at least ten times smaller, than the diode 117 . This makes it possible to “shield” the capacitance of the diode 117 and thus avoid interfering with the signal present on the terminal 109 .

[0068] Combined with the following Figure 2 The operation of the apparatus 100 is discussed in further detail.

[0069] Figure 2 yes Figure 1 The current-to-voltage characteristic 200 of the device 100. More specifically, Figure 2 The current-to-voltage characteristic of the present invention includes a curve 201, which shows the change of the current intensity (I) flowing through the device 100 according to the bias voltage (V) applied between the terminals 109 and 115. The curve 201 includes a left-hand side portion and a right-hand side portion corresponding to the case where the voltage V is negative and the case where the voltage V is positive, respectively. The left-hand side portion and the right-hand side portion of the curve 201 are substantially consistent in absolute value, for example. For simplicity, only the right-hand side portion of the curve 201 will be described in detail below, and it is within the ability of a technician in the field to convert the description to the left-hand side portion of the curve 201 based on the following description.

[0070] In nominal operation or in the case of a short circuit, the bias voltage V may be, for example, between 0 V and the limit voltage V WM The value within the range. Limit voltage V WM For example, it corresponds to the maximum voltage value V provided for a given application. For example, in the case where terminal 109 of device 100 is intended to be connected to a communication terminal "SBU1", "SBU2", "CC1" or "CC2" forming part of a Type-C USB connector, and the voltage applied to terminal "Vbus" of the connector (which may form a short circuit with terminal 109) is approximately equal to 20V, the limiting voltage VWM is about 20V. When the device 100 is at the limiting voltage V WM When biased down, it conducts a low leakage current I L .

[0071] In the event of an overvoltage (e.g., from electrostatic discharge), the bias voltage V can temporarily exceed the threshold voltage V tr Here the threshold voltage V tr Corresponds to the voltage for triggering the protection. In order to avoid any risk of not triggering this protection in time and any risk of irreversible degradation in the event of a short circuit, the device 100 (in particular the diode 117) is dimensioned so that the threshold voltage V tr Greater than the limiting voltage V set in the application under consideration WM .

[0072] When the threshold voltage V tr In other words, once the protection is triggered (for example, due to electrostatic discharge, the voltage V applied between terminals 109 and 115 is greater than V tr ), the voltage V drops slightly to the holding voltage value V h . Maintain voltage V h Corresponds to the minimum voltage V that can be reached after the protection is triggered. h At, greater than the leakage current I L The current I t Flows through diode 117 .

[0073] However, the electrostatic discharge may be severe enough that the bias voltage V of the device 100 continues to increase even after the protection is triggered. This increase in voltage V is accompanied by an increase in the current I flowing through the diode 117. Thus, according to I = (VV h ) / R d (where R d The current I flowing through the diode 117 is basically related to the bias voltage V and the holding voltage V h is proportional to the difference between them.

[0074] like Figure 1 As shown, the value of the bias voltage V can then be increased until it reaches a value called the clamping voltage V cl Voltage V cl Corresponding to the maximum current I that can be accepted by the protection PP (“Peak Pulse Current”).

[0075] One disadvantage of the device 100 is that in order to dissipate electrostatic discharge and resist short circuits, the trigger voltage V trThis adversely affects the dissipation of electrostatic discharge by the device 100, because in the event of an electrostatic discharge the voltage applied between the terminals 109 and 115 decreases from the holding voltage V h The value of V increases, which is also about 10 times higher than the nominal voltage. Therefore, in the event of electrostatic discharge, the circuits and / or components protected by the device 100 may be subjected to a high voltage V, such as about 25V, which may damage them.

[0076] Figure 3 is an electrical diagram showing an example of an anti-electrostatic discharge protection device 300 according to an embodiment.

[0077] Figure 3 The device 300 includes Figure 1 These common elements are common to the device 100 of FIG. 1 and will not be described in detail below. Figure 3 The device 300 and Figure 1 The device 100 of FIG. 3 is different in that the device 300 includes a diode 301 (e.g., a Zener diode) and a capacitive element 303 connected in series between the internal nodes 111 and 113. In the example shown, the diode 301 and the capacitive element 303 are connected in series between the nodes 111 and 113. More specifically, Figure 3 In the example shown, diode 301 includes an anode electrode or terminal connected to another internal node 305 (different from nodes 113 and 111), and a cathode electrode or terminal connected to internal node 111. Capacitive element 303 includes an electrode or terminal connected to internal node 305 and another electrode or terminal connected to internal node 113.

[0078] The diode 301 of the device 300 is similar to the diode 117 of the device 100, for example, but differs from the diode 117 in that the trigger voltage of the diode 301 is lower, for example approximately four times lower, than the trigger voltage of the diode 117. For example, in the case where the absolute value of the nominal voltage applied between the terminals 109 and 115 is lower than 5V or equal to 5V, the diode 301 exhibits a trigger voltage or reverse voltage with an absolute value of approximately 5V.

[0079] also, Figure 3An example is shown in which diode 301 couples node 111 to node 305 and capacitive element 303 couples node 305 to node 113. However, this example is not restrictive, and as a variant, the positions of diode 301 and capacitive element 303 in device 300 may be exchanged, so that diode 301 couples node 305 to node 113, the anode and cathode of diode 301 are then connected to nodes 113 and 305, respectively, and so that capacitive element 303 couples node 111 to node 305.

[0080] More specifically, the capacitive element 303 of the device 300 is a capacitor, which includes two conductive electrodes or plates separated from each other by a dielectric material, such as two mutually parallel metal electrodes. For example, the device 300 can be formed entirely or partially based on discrete components. The device 300, for example, has a monolithic structure, except for the capacitive element 303 formed by discrete components. For example, this advantageously enables the use of a device 300 provided with a capacitive element 303 (for example, when the terminal 109 may be subjected to a short circuit) or provided with a conductive track that replaces the capacitive element 303 (for example, when the terminal 109 is not intended to be able to withstand a short circuit). As a variant example, the device 300 can have a completely monolithic structure, i.e., a structure with a fully integrated element, in which case the capacitive element 303 is, for example, a MIM ("metal insulator metal") type capacitor formed in a stack of conductive levels (such as metal layers) separated from each other by an electrical insulation level (such as a dielectric layer).

[0081] For example, the capacitance of the capacitive element 303 ranges from 100 nF to 10 μF.

[0082] Although this Figure 3 Although not described in detail, the device 300 may further include a component or circuit for discharging the capacitive element 303, such as a resistor associated in parallel with the capacitive element 303. As a variant, the means for discharging the capacitive element 303 of the device 300 may include a transistor (such as a MOS (“metal oxide semiconductor”) transistor) having a conduction terminal (such as a drain) connected to the node 305, having another conduction terminal (such as a source) connected to the terminal 113, and having a control terminal (such as a gate) connected to the control circuit.

[0083] Figure 4 yes Figure 3 More specifically, Figure 4The current-to-voltage characteristic of the device 300 includes a curve 401, which shows the change in the current intensity (I) flowing through the device 300 according to the bias voltage (V) applied between the terminals 109 and 115 of the device 300. Curve 401 shows the "dynamic" operation of the device 300, that is, when the device 300 is subjected to electrostatic discharge, the capacitive element 303 behaves as a short circuit, while in the "static" operation, that is, in the absence of electrostatic discharge, the capacitive element 303 behaves as an open circuit, so the current-to-voltage characteristic of the device 300 exhibits a different shape from the curve 401. Curve 401 includes a left-hand side portion and a right-hand side portion, corresponding to the case where the voltage V is negative and the case where the voltage V is positive, respectively. The left-hand side portion and the right-hand side portion of the curve 401 are substantially the same, for example, in absolute value. For simplicity, only the right-hand side portion of the curve 401 will be described in detail below, and it is within the ability of a technician in this field to convert the description to the left-hand side portion of the curve 401 based on the following description. In order to highlight Figure 1 The device 100 and Figure 3 The difference between the devices 300, Figure 4 2. Curve 201 is shown in FIG. 201 for comparison. In contrast to curve 401 which shows only the dynamic operation of device 300, curve 201 shows both static and dynamic operation of device 100, for example.

[0084] Figure 3 The device 300 exhibits a threshold voltage V′ tr Compare Figure 1 The threshold voltage V of the device 100 tr The device 300 has a dynamic resistance R that is lower than the dynamic resistance of the device 100, such as at least two times lower, such as approximately five times lower. This enables the device 300 to dissipate electrostatic discharge more effectively than the device 100 because the voltage V applied between the terminal 109 and the terminal 115 of the device 300 in the event of an electrostatic discharge is increased from a value lower than that of the device 100 (e.g., a value approximately equal to the nominal voltage applied to the terminal 109). In addition, the device 300 exhibits a dynamic resistance R that is lower than the dynamic resistance of the device 100. d , which enables the device 300 to achieve higher performance in electrostatic discharge dissipation than the device 100, in particular, to achieve a lower voltage V for the same value of current I.

[0085] In the event of a short circuit (e.g. due to the application of a DC voltage higher than the nominal voltage to terminal 109), a current begins to flow between terminal 109 and terminal 115 through diode 101, diode 301, capacitive element 303 and diode 107. Once capacitive element 303 is charged, it behaves as an open circuit and the current flow is interrupted. This advantageously makes it possible to avoid any irreversible degradation of diode 301 in the event of a short circuit.

[0086] Thus, one advantage of the device 300 is that it enables electrostatic discharge to be dissipated more efficiently than the device 100 while maintaining protection against short circuits.

[0087] Figure 5 is an electrical diagram showing another example of an anti-electrostatic discharge protection device 500 according to an embodiment. Figure 5 The device 500 includes Figure 3 These common elements are common to the device 300 of FIG. 1 and FIG. 2 . These common elements will not be described in detail below. Figure 5 The device 500 and Figure 3 The device 500 differs from the device 300 in that the device 500 includes a breakdown diode 501 (also called a Shockley diode) that couples the internal node 111 to the internal node 305 .

[0088] In the event of an electrostatic discharge, the voltage V applied between terminals 109 and 115 of device 500 increases from a value (eg substantially zero) still lower than in the case of device 300. This advantageously enables device 500 to achieve even higher performance than device 300 in terms of protection against electrostatic discharge.

[0089] For example, for a current I approximately equal to 16A (eg, corresponding to an electrostatic discharge of approximately 8 kV on terminal 109 ), the voltage V between terminals 109 and 115 of device 500 is approximately equal to 13V.

[0090] Figure 6 is an electrical diagram showing another example of an anti-electrostatic discharge protection device 600 according to an embodiment. Figure 6 The device 600 includes Figure 3 These common elements are common to the device 300 of FIG. 1 and FIG. 2 . These common elements will not be described in detail below. Figure 6 The device 600 and Figure 3 The difference between the device 300 and the device 600 is that the device 600 includes a plurality of diodes 601 connected in series between the internal node 305 and the internal node 111. More specifically, Figure 6 In the example shown, the device 600 includes three diodes 601-1, 601-2, and 601-3 (e.g., Zener diodes) connected in series between the node 305 and the node 111. In this example, the diode 601-1 includes an anode electrode or terminal connected to the cathode electrode or terminal of the diode 601-2, and a cathode electrode or terminal connected to the node 111. In addition, the diode 601-2 includes an anode electrode or terminal connected to the cathode electrode or terminal of the diode 601-3, and the diode 601-3 includes an anode electrode or terminal connected to the node 305. Although Figure 6An example is shown in which the apparatus 600 includes a group 603 of three diodes 601 - 1 , 601 - 2 , and 601 - 3 , but the group 603 may of course include any number (greater than two or equal to two) of diodes coupling the node 305 to the node 111 .

[0091] In the device 600, each diode 601-1, 601-2, 601-3 is subjected to a voltage between its terminals that is substantially equal to one third of the voltage applied between the terminals of the diode 301 of the device 300. In other words, the voltage applied between the nodes 111 and 305 is distributed between the diodes 601-1, 601-2, and 601-3. This advantageously enables the device 600 to achieve a more significant clamping voltage Vcl than the device 300, for example, in the case where it is desired to obtain a higher voltage Vcl than that obtained by using a single diode (e.g., the diode 301 of the device 300). This further enables the voltage across each diode 601-1, 601-2, 601-3 of the device 600 to be reduced relative to the voltage across the diode 301 of the device 300, and thus can mitigate the disadvantage caused by the change in the capacitance of the diode depending on the voltage applied across it. This results, for example, in that in the device 600 the intensity of the harmonics, in particular the intensity of the odd-order harmonics, more particularly the intensity of the third harmonic (H3), is reduced relative to the device 300 .

[0092] Figure 7 is an electrical diagram showing another example of an anti-electrostatic discharge protection device 700 according to an embodiment. Figure 7 The device 700 includes Figure 3 These common elements are common to the device 300 of FIG. 1 and FIG. 2 . These common elements will not be described in detail below. Figure 7 The device 700 and Figure 3 The device 700 is different from the device 300 in that the device 700 does not include the diodes 105 and 107, and the device 700 includes a plurality of terminals 109 (four terminals 109-1, 109-2, 109-3, and 109-4 in the example shown), each terminal being connected in series between the two diodes 103 and 101. One of the terminals 109 of the device 700 (terminal 109-4 in the example shown) is connected to a node 115 to which a reference potential is applied.

[0093] More specifically, in the example shown, the device 700 includes a plurality of branches 701 (four branches 701 in the example shown), each branch including a terminal 109 (109-1, 109-2, 109-3, or 109-4) connected to an anode of a diode 101 (101-1, 101-2, 101-3, or 101-4) and a cathode of a diode 103 (103-1, 103-2, 103-3, or 103-4), the anode of the diode 103 being connected to an internal node 113, and the cathode of the diode 101 being connected to an internal node 111. Although Figure 7 An example is shown in which the device 700 includes four branches 701, but as a variant, the device 700 may include any number (greater than two or equal to two) of branches 701. In the example shown, the diode 101, the diode 103 and the terminal 109 of each branch 701 are different from the diodes 101, the diodes 103 and the terminals 109 of the other branches 701 of the device 700.

[0094] For example, terminals 109-1, 109-2, 109-3, and 109-4 are intended to be connected to different terminals or pins of a Type-C USB connector.

[0095] The device 700 has Figure 3 Another advantage of the device 700 is that the device 700 enables the diode 301 and the capacitive element 303 to be shared for a plurality of terminals 109. This therefore enables the device 700 to have low complexity, cost and volume compared to those obtained by using one device 300 for each terminal 109 (109-1, 109-2, 109-3 and 109-4) to be protected.

[0096] Figure 8 is an electrical diagram showing another example of an anti-electrostatic discharge protection device 800 according to an embodiment. Figure 8 The device 800 includes Figure 3 These common elements are common to the device 300 of FIG. 1 and FIG. 2 . These common elements will not be described in detail below. Figure 8 The device 800 and Figure 3The device 300 of FIG. 8 is different in that the rectifying elements formed by the diodes 101, 103, 105 and 107 in the case of the device 300 are replaced by assemblies 801, 803, 805 and 807, respectively, in the case of the device 800, each of which includes a thyristor 809 and a diode 811. In each assembly 801, 803, 805, 807, the thyristor 809 includes an anode gate coupled to a cathode electrode or terminal of the thyristor 809 via a diode 811. More precisely, the diode 811 includes an anode electrode or terminal connected to the anode gate of the thyristor 809, and a cathode electrode or terminal connected to a cathode electrode or terminal of the thyristor 809.

[0097] Each component 801, 803, 805, 807 includes an anode electrode or terminal corresponding to the anode electrode or terminal of the thyristor 809, and a cathode electrode or terminal corresponding to the cathode electrode or terminal of the thyristor 809. Figure 3 The description of the electrodes or anode and cathode terminals of the diodes 101, 103, 105 and 107 of the device 300, in particular the connection of these electrodes or terminals with other terminals and nodes of the device 300, can be converted accordingly by a person skilled in the art for use in Figure 8 The electrodes or anodes and cathodes of components 801 , 803 , 805 and 807 of device 800 .

[0098] Various embodiments and variants have been described. Those skilled in the art will appreciate that certain features of these various embodiments and variants may be combined, and that other variants will readily occur to those skilled in the art. In particular:

[0099] The embodiments of apparatus 500 and apparatus 600 may be combined, in which case, for example, all or part of diodes 601-1, 601-2, and 601-3 of apparatus 600 may be replaced by breakdown diodes similar to or identical to diode 501 of apparatus 500;

[0100] Embodiments of apparatus 500 and apparatus 700 may be combined, in which case, for example, diode 301 of apparatus 700 may be replaced by a breakdown diode similar to or identical to diode 501 of apparatus 500; and

[0101] Embodiments of device 600 and device 700 may be combined and may be combined with embodiments of device 500, in which case, for example, diode 301 of device 700 may be replaced by a group 603 comprising a plurality of diodes similar or identical to diodes 601-1, 601-2, and 601-3 of device 600, or by a group similar to group 603 but comprising a plurality of breakdown diodes (e.g., similar to diode 501 of device 500).

[0102] Furthermore, an embodiment of device 800 may be combined with each embodiment of device 500, device 600 and device 700, wherein each diode 101, 103, 105, 107 of these devices may be replaced by a component identical to components 801, 803, 805 and 807, i.e., by a rectifying element comprising a thyristor 809 having its anode gate coupled to its cathode electrode or terminal via a diode 811.

[0103] Although the above has been combined Figure 3 , Figure 5 , Figure 6 , Figure 7 and Figure 8 The bidirectional protection devices 300, 500, 600, 700 and 800 capable of dissipating positive overvoltage or negative overvoltage indiscriminately are described, but based on the instructions of the present disclosure, a unidirectional protection device capable of dissipating only positive overvoltage or negative overvoltage can also be formed. Such a device can be obtained, for example, in each of the devices 300, 500, 600, 700 and 800 by connecting the terminal 115 for applying the reference potential to the node 113 instead of the node 109.

[0104] Finally, based on the functional indications given above, the actual implementation of the described embodiments and variants is within the capabilities of a person skilled in the art. In particular, a person skilled in the art is able to provide means for discharging the capacitive element 303 based on the indications of the present disclosure.

[0105] A person skilled in the art is also able to determine the values ​​of the threshold voltages of the diodes 101 , 103 , 105 , 107 , 117 , 301 , 501 , 601 - 1 , 601 - 2 and 601 - 3 and the capacitance of the capacitive element 303 depending on the application, for example with the aid of digital simulation tools.

[0106] In addition, although the present disclosure describes in detail an application example in which terminals 109 and 115 correspond to terminals or pins of a Type C USB connector, the described embodiments are not limited to this application, but may be implemented in any type of electronic device, component, circuit, etc. that may be protected against electrostatic discharge and suffer from a short circuit.

[0107] Finally, in the protection devices 500 , 600 and 700 , the position of the capacitive element 303 on the one hand and the position of the breakdown diode 501 , the position of the group 603 of diodes 601 or the position of the diode 301 on the other hand, respectively, may be exchanged.

[0108] An anti-electrostatic discharge protection device (300; 500; 600; 700; 800) comprises: at least one first rectifying element (101; 101-1, 101-2, 101-3, 101-4; 801), the first rectifying element comprising an anode connected to a first terminal (109; 109-1, 109-2, 109-3, 109-4) and a cathode connected to a first node (111) of the device; at least one second rectifying element (10 3; 103-1, 103-2, 103-3, 103-4), the second rectifying element comprising an anode connected to the second node (113) of the device and a cathode connected to the first terminal (109); and at least one Zener diode (301; 601-1, 601-2, 601-3) or at least one Shockley diode (501), which is connected in series with the capacitive element (303) between the first node and the second node (111, 113).

[0109] The first rectifying element and the second rectifying element (101, 103) are diodes.

[0110] Each of the first and second rectifying elements (801, 803) includes a thyristor (809) and a diode (811) coupling an anode gate of the thyristor to a cathode of the thyristor.

[0111] The capacitive element (303) is a capacitor.

[0112] The device (300; 500; 600; 800) includes a single first rectifying element (101; 801) and a single second rectifying element (103; 803), the device further comprising: a third rectifying element (105; 805), the third rectifying element including an anode connected to the second terminal (115) and a cathode connected to the first node (111); and a fourth rectifying element (107; 807), the fourth rectifying element including an anode connected to the second node (113) and a cathode connected to the second terminal (115).

[0113] The second terminal (115) is a terminal to which a reference potential is applied.

[0114] The device (700) includes at least two branches (701), each branch including a single first rectifying element (101-1, 101-2, 101-3, 101-4; 801), a single second diode (103-1, 103-2, 103-3, 103-4; 803) and a single first terminal (109-1, 109-2, 109-3, 109-4), which is different from the first rectifying element, the second rectifying element and the terminal of the other branches.

[0115] One of the first terminals (109-1, 109-2, 109-3, 109-4) is connected to a third terminal (115) to which a reference potential is applied.

[0116] The at least one Zener diode or the at least one Shockley diode is a single Zener diode (301).

[0117] The Zener diode (301) includes an anode connected to the third node (305) and a cathode connected to the first node (111), and the capacitive element (303) includes a first terminal connected to the third node (305) and a second terminal connected to the second node (113).

[0118] The Zener diode (301) includes an anode connected to the second node (113) and a cathode connected to the third node (305), and the capacitive element (303) includes a first terminal connected to the third node (305) and a second terminal connected to the first node (111).

[0119] The at least one Zener diode or the at least one Shockley diode is a single Shockley diode (501).

[0120] The at least one Zener diode or the at least one Shockley diode includes at least two Zener diodes or at least two Shockley diodes.

[0121] The first and second terminals (109, 115) are intended to be connected to terminals of a connector (eg, a Type-C USB connector).

[0122] An electronic device, preferably a smartphone, a connected object, a touchpad or a Type-C USB cable, comprises at least one anti-electrostatic discharge protection device (300; 500; 600; 700; 800).

[0123] These and other changes can be made to the embodiments in light of the above detailed description. In general, in the appended claims, the terms used should not be interpreted as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted as including all possible embodiments and the full range of equivalent forms to which the claims are assigned. Therefore, the claims are not limited by the present disclosure.

Claims

1. A device, characterized in that: include: First node; Second node; one or more first terminals; at least one first rectifying element including an anode connected to the first terminal and a cathode connected to the first node; at least one second rectifying element including an anode connected to the second node and a cathode connected to the at least one first terminal; as well as at least one Zener diode or at least one Shockley diode connected in series with a capacitive element between the first node and the second node, wherein the capacitive element is a capacitor, the capacitor comprising a first conductive electrode and a second conductive electrode separated from the first conductive electrode by a dielectric material.

2. The device according to claim 1, characterized in that The first rectifying element and the second rectifying element are diodes.

3. The device according to claim 1, characterized in that Each of the first rectifying element and the second rectifying element includes a thyristor and a diode coupling an anode gate of the thyristor to a cathode of the thyristor.

4. The device according to claim 1, characterized in that include: Second terminal; a single first rectifying element; a single second rectifying element; a third rectifying element including an anode connected to the second terminal and a cathode connected to the first node; as well as A fourth rectifying element includes an anode connected to the second node and a cathode connected to the second terminal.

5. The device according to claim 4, characterized in that The second terminal is a terminal to which a reference potential is applied.

6. The device according to claim 1, characterized in that It comprises at least two branches, each branch comprising a single first rectifying element, a single second diode and a single first terminal which is different from the first rectifying elements, the second rectifying elements and the terminals of the other branches.

7. The device according to claim 6, characterized in that A third terminal for applying a reference potential is included, wherein one of the first terminals is connected to the third terminal.

8. The device according to claim 1, characterized in that Wherein the at least one Zener diode or the at least one Shockley diode is a single Zener diode.

9. The device according to claim 8, characterized in that A third node is included, wherein the Zener diode includes an anode connected to the third node and a cathode connected to the first node, and the capacitive element includes a first terminal connected to the third node and a second terminal connected to the second node.

10. The device according to claim 8, characterized in that The Zener diode includes an anode connected to the second node and a cathode connected to a third node, and the capacitive element includes a first terminal connected to the third node and a second terminal connected to the first node.

11. The device according to claim 1, characterized in that in, The at least one Zener diode or the at least one Shockley diode is a single Shockley diode.

12. The device according to claim 1, characterized in that The at least one Zener diode or the at least one Shockley diode comprises at least two Zener diodes or at least two Shockley diodes.

13. The device according to claim 4, characterized in that The first terminal and the second terminal are configured to be connected to terminals of a Type-C USB connector.

14. The device according to claim 1, characterized in that This includes smartphones, connected objects, touchpads or Type-C USB cables.

15. A device, characterized in that: include: First node; Second node; a pair of first diodes coupled between the first node and the second node; a pair of second diodes coupled between the first node and the second node; a capacitor and a third diode coupled in series between the first node and the second node, wherein the capacitor includes a first terminal coupled to the first node and a second terminal coupled to the third diode and separated from the first terminal by a dielectric material; as well as A first voltage supply terminal is coupled between the first diodes.

16. The device according to claim 15, characterized in that The first diode is a Zener diode.

17. The device according to claim 15, characterized in that The third diode is a Schottky diode.

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