Triode device based on single double-walled carbon nanotube structure

Abstract

The utility model discloses a triode device based on a single double-walled carbon nanotube structure. The triode device comprises a single double-walled carbon nanotube; an inner-layer carbon nanotube of the double-walled carbon nanotube is provided with a source electrode and a drain electrode which are made of a boron-doped P-type material, and a field effect transistor channel is formed between the source electrode and the drain electrode; an outer-layer carbon nano tube of the double-wall carbon nano tube forms a grid electrode through axial cutting and has the property of an N-type material; and the P-N junction is formed between the P-type material and the N-type material. According to the triode device, nanoscale high integration is realized, the interface and contact resistance problems of a traditional single-walled carbon nanotube field effect transistor are solved, the challenge of material coupling is avoided, the size of the device is reduced, and the nanoscale limitation of the prior art is broken through. The device adopts a single material, so that the uniformity and controllability are enhanced, the current driving and electrical properties are improved, the characteristics of low power consumption and quick response are shown, and the device is suitable for novel photoelectric and flexible electronic devices.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic devices, in particular to a triode device based on a single double-walled carbon nanotube structure. Background Art

[0002] As a new type of nanomaterial, carbon nanotubes have shown great application potential in the field of electronic devices due to their excellent electrical, mechanical and thermal properties. In particular, double-walled carbon nanotubes, which are composed of two layers of concentric carbon tubes, retain the excellent electrical conductivity of single-walled carbon nanotubes and have higher mechanical strength and thermal stability.

[0003] In past studies, field-effect transistors with single-walled carbon nanotubes as channels have shown their application prospects in high-performance, low-power electronic devices. However, such field-effect transistors face some challenges in practical applications, especially interface characteristics, contact resistance, material uniformity, and the need to minimize size.

[0004] It should be noted that the information disclosed in the above background technology section is only used for understanding the background of the present application, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Utility Model Content

[0005] The main purpose of the utility model is to overcome the defects of the above-mentioned background technology and provide a triode device based on a single double-walled carbon nanotube structure.

[0006] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0007] A triode device based on a single double-walled carbon nanotube structure, comprising:

[0008] Single double-walled carbon nanotube;

[0009] The inner carbon nanotube of the double-walled carbon nanotube has a source and a drain of boron-doped P-type material, and a field effect tube channel is formed between the source and the drain;

[0010] The outer carbon nanotubes of the double-walled carbon nanotubes are cut axially to form a gate, and have the properties of an N-type material;

[0011] A PN junction is formed between the P-type material and the N-type material, and a depletion region is formed at the PN junction; under a forward bias condition, current is allowed to flow from the source to the drain, and under a reverse bias condition, current is prevented from passing;

[0012] The electrode is assembled on the source electrode, the drain electrode and the gate electrode.

[0013] Furthermore, the double-walled carbon nanotube has chirality (n, m), m=0 or nm≠3q, wherein n and m are integers, q is an integer, and n>m.

[0014] Furthermore, the diameter of the inner layer of carbon nanotubes is 1-20 nm.

[0015] Furthermore, the material of the electrode is selected from gold, platinum, chromium and titanium.

[0016] The utility model has the following beneficial effects:

[0017] The utility model proposes a triode device based on a single double-walled carbon nanotube, in which the inner carbon nanotube has a source and a drain of boron-doped P-type material properties, and the outer carbon nanotube is cut axially to form a gate of N-type material properties. The device achieves high integration within the nanometer scale and can be manufactured by an atomic-level manufacturing method. This structural design of the utility model not only solves the challenges of traditional single-walled carbon nanotube field effect tubes in terms of interface characteristics, contact resistance, and material uniformity, but also avoids the interface and contact problems caused by coupling with other materials by integrating P-type and N-type materials in a single double-walled carbon nanotube, thereby achieving further reduction in device size and breaking through the nanometer-scale size bottleneck of existing semiconductor processes. In addition, since the entire field effect tube is composed of a double-walled carbon nanotube, the uniformity and controllability of the material are enhanced, the current driving capability is improved, and the electrical characteristics are optimized. The triode device can also maintain stable performance under extreme working conditions such as high temperature and high voltage, achieve low power consumption and fast response, and is suitable for new optoelectronic and flexible electronic devices, providing a solid technical foundation for the technological progress and industrial application of the next generation of electronic devices. It has huge application potential and the ability to promote the development of related industries and technological innovation.

[0018] Other beneficial effects of the embodiments of the present invention will be further described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1a It is a schematic structural diagram of a single double-walled carbon nanotube field effect transistor device according to an embodiment of the present invention.

[0020] Figure 1b It is a schematic diagram of the principle of a single double-walled carbon nanotube field effect transistor device according to an embodiment of the present invention.

[0021] Figure 2 This is a diagram showing the energy band structure of the inner carbon nanotube p-type semiconductor according to an embodiment of the present invention.

[0022] Figure 3 This is a diagram showing the energy band structure of an axially trimmed outer layer of carbon nanotube n-type semiconductor according to an embodiment of the present invention. DETAILED DESCRIPTION

[0023] The following is a detailed description of the implementation of the utility model. It should be emphasized that the following description is only exemplary and is not intended to limit the scope and application of the utility model.

[0024] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. In addition, connection can be used for fixing as well as for coupling or communication.

[0025] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the utility model.

[0026] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present utility model, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0027] See also Figure 1a and Figure 1b The embodiment of the utility model provides a triode device based on a single double-walled carbon nanotube structure, comprising: a single double-walled carbon nanotube; an inner carbon nanotube 1 of the double-walled carbon nanotube has a source S and a drain D of a boron-doped P-type material, and a field effect transistor channel is formed between the source S and the drain D; an outer carbon nanotube 2 of the double-walled carbon nanotube is formed into a gate G by axial cutting, and has the property of an N-type material; a PN junction is formed between the P-type material and the N-type material, and a depletion region is formed at the PN junction; under forward bias conditions, current is allowed to flow from the source S to the drain D, and under reverse bias conditions, current is prevented from passing; an electrode 3 is assembled on the source S, the drain D and the gate G.

[0028] Among them, the source S serves as the input end of the current. The drain D serves as the output end of the current. The gate G can control the concentration of carriers in the channel by applying voltage, thereby controlling the flow of current. The channel is the area connecting the source S and the drain D, in which the current can flow. The conductivity of the channel can be controlled by the gate G voltage. Due to the PN junction on the double-layer carbon tube, when the gate G voltage is zero, there are carriers in the channel, and the current can flow from the source S to the drain D. When a negative gate G voltage is applied, a reverse bias is formed at the PN junction, the depletion layer expands, the channel narrows, and the current decreases. As the negative voltage increases, the depletion layer expands further until the channel is completely closed and the current is interrupted.

[0029] In some embodiments, the double-walled carbon nanotube has chirality (n, m), m=0 or nm≠3q, wherein n and m are integers, q is an integer, and n>m.

[0030] In some embodiments, the diameter of the inner carbon nanotubes 1 is 1-20 nm.

[0031] In some embodiments, the material of the electrode can be selected from gold, platinum, chromium, titanium, etc.

[0032] The embodiment of the utility model proposes a triode device based on a single double-walled carbon nanotube structure, realizing a nanoscale complete field effect tube device with a source S, a drain D, a gate P and an NPN junction. A complete triode / field effect tube structure and function are realized in a single double-walled carbon nanotube.

[0033] The utility model utilizes the double-layer structure of double-walled carbon nanotubes to construct a single double-walled field effect tube, wherein the P-type material and the N-type material based on the single double-walled field effect tube are both part of the carbon tube, which can bypass the coupling between the carbon tube and other materials to solve the interface and contact problems, and at the same time can further reduce the size of the device. The device can be made in the nanoscale through an atomic-level manufacturing method, and its diameter can be less than a few nanometers. Since the entire field effect tube is composed of a double-walled carbon nanotube, the uniformity and controllability of the material are also solved. The field effect tube device constructed by the utility model using double-walled carbon nanotubes can not only achieve higher current driving capabilities and better electrical properties, but also maintain stable performance under extreme working conditions such as high temperature and high pressure, and can achieve low power consumption, fast response and flexible electronic device applications.

[0034] The specific embodiments of the present utility model are further described below.

[0035] like Figure 1a and Figure 1bAs shown, a field effect transistor device based on a single double-walled carbon nanotube includes a source S, a drain D, and a gate G, all formed in the same double-walled carbon nanotube. The inner boron-doped carbon nanotube of the double-walled carbon nanotube is a P-type material forming the source S and the drain D, which serves as a field effect transistor channel. The outer carbon nanotube cut along the axial direction is an N-type material forming the gate G. A PN junction is formed between the N-type material and the P-type material.

[0036] Figure 1a and Figure 1b An example is a field effect tube structure device based on a single double-walled carbon nanotube, which includes a double-walled carbon nanotube, an inner layer of which is a complete boron atom-doped nanotube structure, and an outer layer of which is an axially trimmed nanotube structure. Figure 1a and Figure 1b The source S and drain D shown are inner nanotubes. Due to the doping of boron atoms, the properties are P-type semiconductors. Figure 2 As shown, the inner layer of boron-doped nanotubes has holes due to the lack of valence electrons in the boron atoms, which is manifested as an upward shift of the energy band structure. Even under the influence of the outer layer of carbon tubes, the material still exhibits P-type semiconductor properties. Figure 1a and Figure 1b The gate G shown is an outer layer of carbon nanotubes. Due to the introduction of extra dangling electrons due to cutting, the material has multiple charge carriers and behaves as an n-type conductive material in an electric field. Figure 3 As shown in the figure, the trimming structure causes the energy band of the material to shift downward in the electric field, showing the properties of a charge majority semiconductor. A depletion layer is formed at the junction of the P-type material and the N-type material.

[0037] Production example

[0038] Carbon Nanotube Selection

[0039] A boron-doped double-walled carbon nanotube with an inner diameter of about 1-20 nm and a chirality of m=0 or nm≠3q is selected.

[0040] Tailoring carbon nanotubes

[0041] Adhere the double-walled carbon nanotubes to the aluminum wire with conductive epoxy, and then fix the aluminum wire to the fixed side of the holder. Straighten the aluminum wire.

[0042] Electrode etching process: It is carried out in a transmission electron microscope with a low acceleration voltage (such as 100keV), using an etched tungsten electrode as a moving electrode. The electrode is adjusted so that the moving electrode touches the tip of the double-walled carbon nanotube to form a contact. Subsequently, a stable electrical connection is established at the contact point by heating with a high current. The electrode is slid so that the carbon tube is axially broken down. The electrical bias and current readings are monitored during the experiment to ensure that there is enough energy in the electrode to break down the first layer of carbon tubes.

[0043] Electrode assembly

[0044] Locate the position of a single carbon nanotube and record it. Design the electrode to ensure that the electrode contact area coincides with the carbon nanotube. Select appropriate electrode materials such as gold, platinum, chromium, titanium, etc. to ensure good contact with the carbon nanotube.

[0045] Electron beam lithography is used to expose the designed electrode, and a pattern is formed in the exposed area after development. High-precision electrodes are formed by metal deposition and stripping of the photoresist.

[0046] Finally, heat treatment and annealing are performed to ensure the contact between the electrode and the carbon nanotubes.

[0047] In summary, the main technical advantages of the utility model are reflected in its innovative triode device design based on a single double-walled carbon nanotube structure, which realizes the integration of a complete field effect tube device of source, drain, gate and NPN junction type at an extremely small nanoscale. The structure and function of the triode / field effect tube are realized in a single double-walled carbon nanotube, effectively breaking through the size limitation of the existing semiconductor process at the nanoscale. The special double-layer structure of the double-walled carbon nanotube enables the utility model to solve the interface and contact problems without relying on the coupling of the carbon nanotube with other materials, while achieving a significant reduction in the size of the device. This design also solves the problems of material uniformity and controllability, because the entire field effect tube is composed of a single double-walled carbon nanotube. In addition, the triode device of the utility model exhibits excellent electrical characteristics, has a higher current driving capability, and can still maintain stable performance under extreme working conditions such as high temperature and high pressure. It also achieves low power consumption and fast response, and is suitable for flexible electronic devices, providing a solid technical foundation for the miniaturization, high performance and multifunctional integration of electronic devices. These advantages indicate that this technology has great application potential in the fields of computers, communications, sensors, etc., and is expected to promote the development of related industries and technological innovation, and open up new directions for the further development of electronic devices in the future.

[0048] The above content is a further detailed description of the utility model in combination with specific / preferred embodiments, and it cannot be determined that the specific implementation of the utility model is limited to these descriptions. For ordinary technicians in the technical field to which the utility model belongs, without departing from the concept of the utility model, it can also make several substitutions or modifications to these described embodiments, and these substitutions or modifications should be regarded as belonging to the protection scope of the utility model. In the description of this specification, the description of the reference terms "an embodiment", "some embodiments", "preferred embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in combination with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily target the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In the absence of mutual contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples. Although the embodiments of the present invention and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations may be made herein without departing from the scope of protection of the patent application.

Claims

1. A triode device based on a single double-walled carbon nanotube structure, characterized in that: include: Single double-walled carbon nanotube; The inner carbon nanotube of the double-walled carbon nanotube has a source and a drain of boron-doped P-type material, and a field effect tube channel is formed between the source and the drain; The diameter of the inner layer carbon nanotubes is 1-20 nm; The outer carbon nanotubes of the double-walled carbon nanotubes are cut axially to form a gate, and have the properties of an N-type material; A PN junction is formed between the P-type material and the N-type material, and a depletion region is formed at the PN junction; Under forward bias conditions, current is allowed to flow from the source to the drain, and under reverse bias conditions, current is prevented from flowing; The electrode is assembled on the source electrode, the drain electrode and the gate electrode.

2. The triode device based on a single double-walled carbon nanotube structure according to claim 1, characterized in that: The double-walled carbon nanotube has chirality (n, m), m=0 or nm≠3q, wherein n and m are integers, q is an integer, and n>m.

3. The triode device based on a single double-walled carbon nanotube structure according to claim 1 or 2, characterized in that: The material of the electrode is selected from gold, platinum, chromium and titanium.

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