Perovskite laminated solar cell and photovoltaic module

Abstract

The utility model relates to a perovskite laminated solar cell and a photovoltaic module. The perovskite laminated solar cell comprises a transparent substrate, a perovskite solar cell and a cadmium telluride solar cell, the perovskite solar cell and the cadmium telluride solar cell are arranged on two opposite surfaces of the transparent substrate respectively, the perovskite solar cell is a top cell, and the cadmium telluride solar cell is a bottom cell; the perovskite solar cell comprises a perovskite layer, and a first transparent electrode, a hole transport layer, an insulating dielectric layer, a second transparent electrode and an electron transport layer which are stacked in sequence, wherein the first transparent electrode is arranged on a transparent substrate; the perovskite layer is in contact with the surface, away from the second transparent electrode, of the electron transport layer; the insulating dielectric layer partially covers the hole transport layer, and the perovskite layer is in contact with the surface, exposed out of the insulating dielectric layer, of the hole transport layer. According to the perovskite laminated solar cell provided by the invention, a relatively high light utilization rate can be realized, so that relatively high photoelectric conversion efficiency is realized.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and in particular to a perovskite tandem solar cell and a photovoltaic module. Background Art

[0002] Perovskite solar cells have advantages such as high conversion efficiency, adjustable bandgap width and easy low-temperature solution processing. At the same time, wide-bandgap perovskite solar cells can be used together with narrow-bandgap cadmium telluride solar cells to prepare perovskite / cadmium telluride tandem solar cells. However, in traditional perovskite solar cells, sunlight must pass through the transmission layer before reaching the perovskite layer, resulting in high light loss, which leads to low photoelectric conversion efficiency of the tandem solar cell. Utility Model Content

[0003] Based on this, it is necessary to provide a perovskite tandem solar cell and a photovoltaic module. In the perovskite tandem solar cell of the present application, the light loss of the perovskite solar cell is low, and the perovskite tandem solar cell can achieve a higher light utilization rate, thereby achieving a higher photoelectric conversion efficiency.

[0004] In a first aspect, the present application provides a perovskite tandem solar cell, comprising a transparent substrate, and a perovskite solar cell and a cadmium telluride solar cell respectively disposed on two opposite surfaces of the transparent substrate, wherein the perovskite solar cell is a top cell and the cadmium telluride solar cell is a bottom cell;

[0005] The perovskite solar cell comprises a perovskite layer, and a first transparent electrode, a hole transport layer, an insulating medium layer, a second transparent electrode, and an electron transport layer which are stacked in sequence, wherein the first transparent electrode is arranged on the transparent substrate; the perovskite layer contacts the surface of the electron transport layer away from the second transparent electrode; the insulating medium layer partially covers the hole transport layer, and the perovskite layer contacts the surface of the hole transport layer exposed from the insulating medium layer;

[0006] The cadmium telluride solar cell comprises a metal electrode, a back contact layer, a cadmium telluride absorption layer, a window layer and a third transparent electrode which are stacked in sequence, and the third transparent electrode layer is arranged on the transparent substrate.

[0007] In some embodiments, the hole transport layer comprises a self-assembled monolayer.

[0008] In some embodiments, the hole transport layer comprises a stacked self-assembled monolayer and NiO x layer.

[0009] In some embodiments, the insulating dielectric layer has a patterned interdigitated structure, and the second transparent electrode and the electron transport layer have the same shape as the insulating dielectric layer.

[0010] In some embodiments, the perovskite solar cell further includes a first electrode interface layer, and the first electrode interface layer is disposed between the second transparent electrode and the electron transport layer.

[0011] In some embodiments, the perovskite layer covers the insulating medium layer, the second transparent electrode and the electron transport layer.

[0012] In some embodiments, the perovskite solar cell further includes a protective layer, which is disposed on a surface of the perovskite layer away from the electron transport layer.

[0013] In some embodiments, the perovskite solar cell further includes a first anti-reflection layer, and the first anti-reflection layer is disposed between the transparent substrate and the first transparent electrode.

[0014] In some embodiments, the perovskite solar cell further includes a second anti-reflection layer, and the second anti-reflection layer is disposed on a surface of the protective layer away from the perovskite layer.

[0015] In some embodiments, the cadmium telluride solar cell includes a metal electrode, a back contact layer, a cadmium telluride absorption layer, a window layer and a third transparent electrode which are stacked in sequence, and the third transparent electrode layer is disposed on the transparent substrate.

[0016] In some embodiments, the cadmium telluride solar cell further includes a second electrode interface layer, and the second electrode interface layer is disposed between the window layer and the third transparent electrode.

[0017] In a second aspect, the present application provides a photovoltaic module comprising the perovskite tandem solar cell described in any one of the above items.

[0018] The above-mentioned perovskite tandem solar cell includes a perovskite solar cell and a cadmium telluride solar cell. In the perovskite solar cell, the first transparent electrode, the hole transport layer, the second transparent electrode and the electron transport layer are all arranged on the same surface of the perovskite layer. The sunlight does not need to pass through the transport layer before reaching the perovskite layer. The perovskite layer can absorb light without covering the entire surface, and the light loss of the perovskite solar cell is low. At the same time, the perovskite solar cell of the above structure is used as a top cell and a cadmium telluride solar cell to form a tandem solar cell. When the light loss of the top cell is low, the absorption and utilization of the sunlight passing through the top cell by the cadmium telluride solar cell can also be increased. The perovskite tandem solar cell of the present application can achieve a higher light utilization rate, and thus achieve a higher photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the structure of a perovskite tandem solar cell provided in one embodiment of the present application.

[0020] Description of Reference Numerals

[0021] 10. Transparent substrate; 20. Perovskite solar cell; 21. First transparent electrode; 22. Hole transport layer; 23. Insulating dielectric layer; 24. Second transparent electrode; 25. First electrode interface layer; 26. Electron transport layer; 27. Perovskite layer; 28. Protective layer; 30. Cadmium telluride solar cell; 31. Metal electrode; 32. Back contact layer; 33. Cadmium telluride absorption layer; 34. Window layer; 35. Second electrode interface layer; 36. Third transparent electrode; 41. First anti-reflection layer; 42. Second anti-reflection layer. DETAILED DESCRIPTION

[0022] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0023] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0025] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0026] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0027] Reference Figure 1 As shown, an embodiment of the present application provides a perovskite tandem solar cell, comprising a transparent substrate 10, and a perovskite solar cell 20 and a cadmium telluride solar cell 30 respectively arranged on two opposite surfaces of the transparent substrate 10, wherein the perovskite solar cell 20 is a top cell and the cadmium telluride solar cell 30 is a bottom cell; the perovskite solar cell 20 comprises a perovskite layer 27, and a first transparent electrode 21, a hole transport layer 22, an insulating medium layer 23, a second transparent electrode 24, and an electron transport layer 26 which are sequentially stacked, The first transparent electrode 21 is arranged on the transparent substrate 10; the perovskite layer 27 contacts the surface of the electron transport layer 26 away from the second transparent electrode 24; the insulating medium layer 23 partially covers the hole transport layer 22, and the perovskite layer 27 contacts the surface of the hole transport layer 22 exposed from the insulating medium layer 23; the cadmium telluride solar cell 30 includes a metal electrode 31, a back contact layer 32, a cadmium telluride absorption layer 33, a window layer 34 and a third transparent electrode 36 which are stacked in sequence, and the third transparent electrode 36 is arranged on the transparent substrate 10.

[0028] The above-mentioned perovskite tandem solar cell includes a perovskite solar cell 20 and a cadmium telluride solar cell 30. In the perovskite solar cell 20, the first transparent electrode 21, the hole transport layer 22, the second transparent electrode 24 and the electron transport layer 26 are all arranged on the same surface of the perovskite layer 27. The sunlight does not need to pass through the transport layer before reaching the perovskite layer 27. The perovskite layer 27 can absorb light without covering the entire surface, and the light loss of the perovskite solar cell 20 is low. At the same time, the perovskite solar cell 20 of the above-mentioned structure is used as a top cell and the cadmium telluride solar cell 30 to form a tandem solar cell. When the light loss of the top cell is low, the absorption and utilization of the sunlight passing through the top cell by the cadmium telluride solar cell 30 can also be increased. The perovskite tandem solar cell of the present application can achieve a higher light utilization rate, and thus achieve a higher photoelectric conversion efficiency.

[0029] In some embodiments, the perovskite layer 27 comprises a chemical formula of ABX 3 A material wherein A comprises CH 3 NH 3 + , C 4 H 9 NH 3 + NH 2 =CHNH 2 + and Cs + At least one of, B includes Pb 2+ Sn 2+ At least one of, X includes Cl - Br - and I - At least one of .

[0030] In some embodiments, the thickness of the perovskite layer 27 is 300 nm to 1000 nm.

[0031] Optionally, the thickness of the perovskite layer 27 is 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm or 1000 nm. Alternatively, the thickness of the perovskite layer 27 may also be within a range between any two of the above thicknesses.

[0032] In some embodiments, the bandgap of the perovskite layer 27 is equal to or greater than 1.75 eV.

[0033] Optionally, the bandgap width of the perovskite layer 27 is 1.75eV to 2.5eV. Further optionally, the bandgap width of the perovskite layer 27 is 1.75eV, 18eV, 1.85eV, 1.9eV, 1.95eV, 2eV, 2.05eV, 2.1eV, 2.15eV, 2.2eV, 2.25eV, 2.3eV, 2.35eV, 2.4eV, 2.45eV or 2.5eV. Alternatively, the bandgap width of the perovskite layer 27 may also be within the range between any two of the above-mentioned bandgap widths.

[0034] In some embodiments, the transparent substrate 10 includes at least one of glass and a flexible transparent polymer substrate.

[0035] In some embodiments, the material of the first transparent electrode 21 includes at least one of ITO, FTO, IZO, IWO and IZrO.

[0036] In some embodiments, the first transparent electrode 21 includes at least one of an ITO electrode, a FTO electrode, an IZO electrode, an IWO electrode, and an IZrO electrode.

[0037] In some embodiments, the thickness of the first transparent electrode 21 is 5 nm to 200 nm.

[0038] Optionally, the thickness of the first transparent electrode 21 is 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 195nm or 200nm. Alternatively, the thickness of the first transparent electrode 21 may also be within the range between any two of the above thicknesses.

[0039] In some embodiments, the material of the insulating dielectric layer 23 includes LiF, MgF 2 、SiO 2 、Al 2 O 3 and SiN x At least one of .

[0040] In some embodiments, the insulating dielectric layer 23 includes a LiF layer, a MgF 2 Layer, SiO 2 Layer, Al 2 O 3 Layer and SiN x at least one of the layers.

[0041] In some embodiments, the thickness of the insulating dielectric layer 23 is 0.1 μm to 3 μm.

[0042] Optionally, the thickness of the insulating dielectric layer 23 is 0.1 μm, 0.2 μm, 0.5 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, 2 μm, 2.2 μm, 2.5 μm, 2.8 μm or 3 μm. Alternatively, the thickness of the insulating dielectric layer 23 may be within a range between any two of the above thicknesses.

[0043] In some embodiments, the material of the second transparent electrode 24 includes at least one of ITO, FTO, IZO, IWO and IZrO.

[0044] In some embodiments, the second transparent electrode 24 includes at least one of an ITO electrode, a FTO electrode, an IZO electrode, an IWO electrode, and an IZrO electrode.

[0045] In some embodiments, the thickness of the second transparent electrode 24 is 5 nm to 200 nm.

[0046] Optionally, the thickness of the second transparent electrode 24 is 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, 150 nm, 160 nm, 170 nm, 180 nm, 190 nm, 195 nm or 200 nm. Alternatively, the thickness of the second transparent electrode 24 may also be within a range between any two of the above thicknesses.

[0047] In some embodiments, the material of the electron transport layer 26 includes C 60 , C 70 、PCBM、SnO 2 , ZnO and TiO 2 At least one of .

[0048] In some embodiments, the electron transport layer 26 includes C 60 Layer, C 70 Layer, PCBM layer, SnO 2 layer, ZnO layer and TiO 2 at least one of the layers.

[0049] In some embodiments, the thickness of the electron transport layer 26 is 12 nm to 50 nm.

[0050] Optionally, the thickness of the electron transport layer 26 is 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, 22 nm, 25 nm, 28 nm, 30 nm, 32 nm, 35 nm, 38 nm, 40 nm, 42 nm, 44 nm, 46 nm, 48 nm or 50 nm. Alternatively, the thickness of the electron transport layer 26 may also be within the range between any two of the above thicknesses.

[0051] In some embodiments, the hole transport layer 22 comprises a self-assembled monolayer.

[0052] In some embodiments, the material of the self-assembled monolayer includes at least one of 2PACz, MeO-2PACz and Me-4PACz.

[0053] In some embodiments, the self-assembled monolayer includes at least one of a 2PACz layer, a MeO-2PACz layer, and a Me-4PACz layer.

[0054] In some embodiments, the hole transport layer 22 includes a stacked self-assembled monolayer and NiO x layer.

[0055] In some embodiments, the thickness of the self-assembled monolayer is 1 nm to 10 nm.

[0056] Optionally, the thickness of the self-assembled monolayer is 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm or 10 nm. Alternatively, the thickness of the self-assembled monolayer may also be within the range between any two of the above thicknesses.

[0057] In some embodiments, NiO x The thickness of the layer is 5nm~100nm.

[0058] Optionally, NiO x The thickness of the layer is 5 nm, 10 nm, 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm. Alternatively, NiO x The thickness of the layer may also be within a range between any two of the above thicknesses.

[0059] In some embodiments, the insulating dielectric layer 23 has a patterned interdigitated structure, and the second transparent electrode 24 and the electron transport layer 26 have the same shape as the insulating dielectric layer 23 .

[0060] In some embodiments, the perovskite solar cell 20 further includes a first electrode interface layer 25 , which is disposed between the second transparent electrode 24 and the electron transport layer 26 .

[0061] In some embodiments, the material of the first electrode interface layer 25 includes BCP, LiF, ZrAcac, SnO 2 , ZnO and TiO 2 At least one of .

[0062] In some embodiments, the first electrode interface layer 25 includes a BCP layer, a LiF layer, a ZrAcac layer, a SnO 2 layer, ZnO layer and TiO 2 at least one of the layers.

[0063] In some embodiments, the thickness of the first electrode interface layer 25 is 5 nm to 30 nm.

[0064] Optionally, the thickness of the first electrode interface layer 25 is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm. Alternatively, the thickness of the first electrode interface layer 25 may also be within a range between any two of the above thicknesses.

[0065] In some embodiments, the perovskite layer 27 covers the insulating medium layer 23 , the second transparent electrode 24 and the electron transport layer 26 .

[0066] In some embodiments, the perovskite solar cell 20 further includes a protective layer 28 , which is disposed on a surface of the perovskite layer 27 away from the electron transport layer 26 .

[0067] In some embodiments, the protective layer 28 includes at least one of a polymer layer and a metal oxide layer.

[0068] In some embodiments, the material of the protective layer 28 includes PMMA, PS and Al 2 O 3 At least one of .

[0069] In some embodiments, the protective layer 28 includes a PMMA layer, a PS layer and an Al 2 O 3 at least one of the layers.

[0070] In some embodiments, the thickness of the protection layer 28 is 5 nm to 100 nm.

[0071] Optionally, the thickness of the protective layer 28 is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm. Alternatively, the thickness of the protective layer 28 may also be within the range between any two of the above thicknesses.

[0072] In some embodiments, the perovskite solar cell 20 further includes a first anti-reflection layer 41 , which is disposed between the transparent substrate 10 and the first transparent electrode 21 .

[0073] In some embodiments, the material of the first anti-reflection layer 41 includes MgF 2 .

[0074] In some embodiments, the first anti-reflection layer 41 includes MgF 2 layer.

[0075] In some embodiments, the first anti-reflection layer 41 has a thickness of 100 nm to 500 nm.

[0076] Optionally, the thickness of the first anti-reflection layer 41 is 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm or 500 nm. Alternatively, the thickness of the first anti-reflection layer 41 may also be within a range between any two of the above thicknesses.

[0077] In some embodiments, the perovskite solar cell 20 further includes a second anti-reflection layer 42 , which is disposed on a surface of the protective layer 28 away from the perovskite layer 27 .

[0078] In some embodiments, the material of the second anti-reflection layer 42 includes MgF 2 .

[0079] In some embodiments, the second anti-reflection layer 42 includes MgF 2 layer.

[0080] In some embodiments, the second anti-reflection layer 42 has a thickness of 100 nm to 500 nm.

[0081] Optionally, the thickness of the second anti-reflection layer 42 is 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm or 500 nm. Alternatively, the thickness of the second anti-reflection layer 42 may also be within a range between any two of the above thicknesses.

[0082] In some embodiments, the material of the metal electrode 31 includes at least one of Au, Ag, Pt, Al, Ni and Cu.

[0083] In some embodiments, the metal electrode 31 includes at least one of an Au electrode, an Ag electrode, a Pt electrode, an Al electrode, a Ni electrode, and a Cu electrode.

[0084] In some embodiments, the thickness of the metal electrode 31 is 50 nm to 200 nm.

[0085] Optionally, the thickness of the metal electrode 31 is 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm or 200nm. Alternatively, the thickness of the metal electrode 31 may also be within the range between any two of the above thicknesses.

[0086] In some embodiments, the material of the back contact layer 32 includes CuSCN.

[0087] In some embodiments, back contact layer 32 includes a CuSCN layer.

[0088] In some embodiments, the thickness of the back contact layer 32 is 5 nm to 100 nm.

[0089] Optionally, the thickness of the back contact layer 32 is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm. Alternatively, the thickness of the back contact layer 32 may also be within a range between any two of the above thicknesses.

[0090] In some of these embodiments, the cadmium telluride absorber layer 33 includes a CdTe layer.

[0091] In some embodiments, the cadmium telluride absorption layer 33 has a thickness of 1 μm to 5 μm.

[0092] Optionally, the thickness of the cadmium telluride absorption layer 33 is 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm or 5 μm. Alternatively, the thickness of the cadmium telluride absorption layer 33 may also be within a range between any two of the above thicknesses.

[0093] In some embodiments, the material of the window layer 34 includes CdSeTe.

[0094] In some embodiments, window layer 34 includes a CdSeTe layer.

[0095] In some embodiments, the thickness of the window layer 34 is 20 nm to 100 nm.

[0096] Optionally, the thickness of the window layer 34 is 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm. Alternatively, the thickness of the window layer 34 may also be within a range between any two of the above thicknesses.

[0097] In some embodiments, the material of the third transparent electrode 36 includes at least one of ITO, FTO, IZO, IWO and IZrO.

[0098] In some embodiments, the third transparent electrode 36 includes at least one of an ITO electrode, a FTO electrode, an IZO electrode, an IWO electrode, and an IZrO electrode.

[0099] In some embodiments, the thickness of the third transparent electrode 36 is 5 nm to 200 nm.

[0100] Optionally, the thickness of the third transparent electrode 36 is 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, 160nm, 170nm, 180nm, 190nm, 195nm or 200nm. Alternatively, the thickness of the third transparent electrode 36 may also be within the range between any two of the above thicknesses.

[0101] In some embodiments, the cadmium telluride solar cell 30 further includes a second electrode interface layer 35 , and the second electrode interface layer 35 is disposed between the window layer 34 and the third transparent electrode 36 .

[0102] In some embodiments, the material of the second electrode interface layer 35 includes BCP, LiF, ZrAcac, SnO 2 , ZnO and TiO 2 At least one of .

[0103] In some embodiments, the second electrode interface layer 35 includes a BCP layer, a LiF layer, a ZrAcac layer, a SnO 2 layer, ZnO layer and TiO 2 at least one of the layers.

[0104] In some embodiments, the thickness of the second electrode interface layer 35 is 5 nm to 30 nm.

[0105] Optionally, the thickness of the second electrode interface layer 35 is 5 nm, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm. Alternatively, the thickness of the second electrode interface layer 35 may also be within a range between any two of the above thicknesses.

[0106] Another embodiment of the present application provides a method for preparing a perovskite tandem solar cell, comprising the following steps:

[0107] A perovskite solar cell 20 and a cadmium telluride solar cell 30 are respectively formed on two opposite surfaces of a transparent substrate 10;

[0108] The perovskite solar cell 20 includes a perovskite layer 27, and a first transparent electrode 21, a hole transport layer 22, an insulating medium layer 23, a second transparent electrode 24, and an electron transport layer 26 which are stacked in sequence, wherein the first transparent electrode 21 is disposed on a transparent substrate 10; the perovskite layer 27 contacts the surface of the electron transport layer 26 away from the second transparent electrode 24; the insulating medium layer 23 partially covers the hole transport layer 22, and the perovskite layer 27 contacts the surface of the hole transport layer 22 exposed from the insulating medium layer 23; the cadmium telluride solar cell 30 includes a metal electrode 31, a back contact layer 32, a cadmium telluride absorption layer 33, a window layer 34, and a third transparent electrode 36 which are stacked in sequence, and the third transparent electrode 36 is disposed on the transparent substrate 10.

[0109] In some embodiments, the method for preparing the perovskite solar cell 20 includes the following steps:

[0110] A first anti-reflection layer 41, a first transparent electrode 21, a hole transport layer 22, an insulating medium layer 23, a second transparent electrode 24, a first electrode interface layer 25, an electron transport layer 26, a perovskite layer 27, a protective layer 28 and a second anti-reflection layer 42 are sequentially prepared on the surface of the transparent substrate 10.

[0111] In some embodiments, the preparation method of the first anti-reflection layer 41 includes thermal evaporation deposition.

[0112] In some embodiments, the preparation method of the first transparent electrode 21 includes magnetron sputtering deposition.

[0113] In some embodiments, the method for preparing the self-assembled monolayer comprises thermal evaporation deposition.

[0114] In some embodiments, NiO x The layer preparation method includes magnetron sputtering deposition.

[0115] In some embodiments, the insulating dielectric layer 23 is prepared by thermal evaporation deposition.

[0116] In some embodiments, the second transparent electrode 24 is prepared by a method comprising magnetron sputtering deposition.

[0117] In some embodiments, the preparation method of the first electrode interface layer 25 includes atomic layer deposition.

[0118] In some embodiments, the preparation method of the electron transport layer 26 includes thermal evaporation deposition.

[0119] In some embodiments, the preparation method of the perovskite layer 27 includes at least one of spin coating, blade coating, and slit coating.

[0120] In some embodiments, the protective layer 28 is prepared by at least one of spin coating, scraper coating, slit coating, and atomic layer deposition.

[0121] In some embodiments, the second anti-reflection layer 42 is prepared by thermal evaporation deposition.

[0122] In some embodiments, the cadmium telluride solar cell 30 is prepared by the following steps:

[0123] A third transparent electrode 36 , a second electrode interface layer 35 , a window layer 34 , a cadmium telluride absorption layer 33 , a back contact layer 32 and a metal electrode 31 are sequentially prepared on the surface of the transparent substrate 10 .

[0124] In some embodiments, the preparation method of the third transparent electrode 36 includes magnetron sputtering deposition.

[0125] In some embodiments, the preparation method of the second electrode interface layer 35 includes at least one of spin coating, blade coating, and slit coating.

[0126] In some embodiments, the preparation method of the window layer 34 includes magnetron sputtering deposition.

[0127] In some embodiments, the method of preparing the cadmium telluride absorber layer 33 includes sublimation deposition.

[0128] In some embodiments, the preparation method of the back contact layer 32 includes at least one of spin coating, blade coating, and slit coating.

[0129] In some embodiments, the preparation method of the metal electrode 31 includes thermal evaporation deposition.

[0130] Another embodiment of the present application provides a photovoltaic module, including any of the above-mentioned perovskite tandem solar cells or a perovskite tandem solar cell prepared by the above-mentioned method for preparing the perovskite tandem solar cell.

[0131] The following are specific embodiments

[0132] Example 1

[0133] In this embodiment, the perovskite tandem solar cell is a back-contact perovskite / cadmium telluride four-terminal tandem solar cell. The perovskite solar cell 20 is the top cell, and the cadmium telluride solar cell 30 is the bottom cell. Among them, the transparent substrate 10 is a glass substrate. In the perovskite solar cell 20, the first transparent electrode 21 is a FTO electrode, and the material of the hole transport layer 22 is NiO x layer and Me-4PACz layer, the insulating dielectric layer 23 is made of SiO 2 The second transparent electrode 24 is an IZO electrode, and the material of the first electrode interface layer 25 is SnO 2 , the material of the electron transport layer 26 is C 60 , the material of the perovskite layer 27 is Cs 0.3 FA 0.6 DMA 0.1 Pb(I 0.7 Br 0.3 ) 3 , the bandgap is 1.76 eV, and the material of the protective layer 28 is PMMA. In the cadmium telluride solar cell 30, the metal electrode 31 is an Au electrode, the material of the back contact layer 32 is CuSCN, the material of the cadmium telluride absorption layer 33 is CdTe, the material of the window layer 34 is CdSeTe, and the material of the second electrode interface layer 35 is SnO 2 The third transparent electrode 36 is a FTO electrode. The material of the first anti-reflection layer 41 is MgF 2 The material of the second anti-reflection layer 42 is MgF 2 .

[0134] The performance of the perovskite tandem solar cell, the perovskite solar cell 20, and the cadmium telluride solar cell 30 before and after the perovskite solar cell 20 is stacked in Example 1 is tested, and the test results are shown in Table 1 below:

[0135] Table 1

[0136]

[0137] It can be seen from Table 1 above that the perovskite tandem solar cell in Example 1 can achieve a conversion efficiency that exceeds that of perovskite solar cells and cadmium telluride solar cells.

[0138] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0139] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims, and the description and drawings may be used to interpret the contents of the claims.

Claims

1. A perovskite tandem solar cell, characterized in that: It comprises a transparent substrate, and a perovskite solar cell and a cadmium telluride solar cell respectively arranged on two opposite surfaces of the transparent substrate, wherein the perovskite solar cell is a top cell and the cadmium telluride solar cell is a bottom cell; The perovskite solar cell comprises a perovskite layer, and a first transparent electrode, a hole transport layer, an insulating medium layer, a second transparent electrode, and an electron transport layer which are stacked in sequence, wherein the first transparent electrode is arranged on the transparent substrate; the perovskite layer contacts the surface of the electron transport layer away from the second transparent electrode; the insulating medium layer partially covers the hole transport layer, and the perovskite layer contacts the surface of the hole transport layer exposed from the insulating medium layer; The cadmium telluride solar cell comprises a metal electrode, a back contact layer, a cadmium telluride absorption layer, a window layer and a third transparent electrode which are stacked in sequence, and the third transparent electrode layer is arranged on the transparent substrate.

2. The perovskite tandem solar cell according to claim 1, characterized in that: The hole transport layer comprises a self-assembled monolayer; or the hole transport layer comprises a stacked self-assembled monolayer and NiO x layer.

3. The perovskite tandem solar cell according to claim 1, characterized in that: The insulating dielectric layer has a patterned interdigitated structure, and the second transparent electrode and the electron transport layer have the same shape as the insulating dielectric layer.

4. The perovskite tandem solar cell according to claim 1, characterized in that: The perovskite solar cell further includes a first electrode interface layer, which is disposed between the second transparent electrode and the electron transport layer.

5. The perovskite tandem solar cell according to claim 1, characterized in that: The perovskite layer covers the insulating medium layer, the second transparent electrode and the electron transport layer.

6. The perovskite tandem solar cell according to claim 1, characterized in that: The perovskite solar cell further includes a protective layer, which is disposed on a surface of the perovskite layer away from the electron transport layer.

7. The perovskite tandem solar cell according to claim 6, characterized in that: The perovskite solar cell further includes a second anti-reflection layer, which is disposed on a surface of the protective layer away from the perovskite layer.

8. The perovskite tandem solar cell according to claim 1, characterized in that: The perovskite solar cell further includes a first anti-reflection layer, which is disposed between the transparent substrate and the first transparent electrode.

9. The perovskite tandem solar cell according to claim 1, characterized in that: The cadmium telluride solar cell further includes a second electrode interface layer, and the second electrode interface layer is arranged between the window layer and the third transparent electrode.

10. A photovoltaic module, characterized in that: A perovskite tandem solar cell comprising the perovskite tandem solar cell according to any one of claims 1 to 9.

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