Ventilation structure of silicon carbide crystal growth equipment

Abstract

The utility model discloses a ventilation structure of silicon carbide crystal growth equipment, which comprises an integrated board, a main pipeline is arranged on the integrated board, the main pipeline is respectively connected with a first branch and a second branch, one end of the first branch far away from the main pipeline is connected with nitrogen, and the other end of the first branch far away from the main pipeline is connected with the second branch. The end, away from the main pipeline, of the second branch is connected with argon, a pneumatic triple piece and a valve island are further arranged on the integrated plate, compressed air circulates in the pneumatic triple piece and the valve island, and the first branch and the second branch are controlled to be opened or closed through the compressed air. According to the ventilation structure of the silicon carbide crystal growth equipment provided by the utility model, the first branch and the second branch which are respectively connected with nitrogen and argon are integrated on the integrated board, so that the stability of a gas conveying system in a crystal growth process is ensured, the installation time of a factory service end is saved, and gas leakage in a connection process is effectively prevented; and the risk of gas leakage is reduced.

Description

Technical Field

[0001] The utility model belongs to the technical field of silicon carbide crystal growth, and in particular relates to a ventilation structure of silicon carbide crystal growth equipment. Background Art

[0002] As a third-generation semiconductor material, silicon carbide has the characteristics of wide bandgap, high breakdown field strength, and high thermal conductivity. Since silicon carbide will decompose before being heated to the melting point under normal pressure, it cannot be directly grown using methods similar to silicon crystal growth. At present, the main method for growing large-sized silicon carbide crystals is the PVT method, which is to put silicon carbide powder at the bottom of the crucible, stick a silicon carbide seed crystal (silicon carbide single crystal wafer, which serves as the seed for crystal growth) on the top of the crucible, and then evacuate the reaction vessel to 10 -5 -10 -9 atm, and heated to about 1000℃, maintaining vacuum. Then fill with an appropriate amount of argon gas to 10 -2 -10 - 4 atm, and further heated to about 2000℃, the raw materials are decomposed under the conditions of high temperature and inert atmosphere, and the gas phase produced after decomposition is controlled by the temperature gradient and deposited on the seed crystal to grow crystals.

[0003] In the prior art, the inert gas needs to be connected to the equipment end through a pipeline between the plant service end and the equipment end. Since the equipment end is only equipped with the flow detector and switch valve required for the inert gas, there is no gas pressure reducing valve and filter. However, in the actual production process, the inert gas needs to be regulated by the pressure reducing valve and filtered by the filter before it can enter the vacuum chamber of the equipment end, otherwise it will inevitably affect the yield of crystal growth. This forces the need to install a pressure reducing valve and filter at the plant service end and the air inlet of the equipment. However, once the number of plant service end interfaces increases and the lines become complicated, the risk of inert gas leakage will increase, and the time required for installation at the plant service end will also increase.

[0004] Therefore, it is urgent to design a ventilation structure for silicon carbide crystal growth equipment to solve the problem that in the prior art mentioned above, pressure reducing valves and filters are installed at the plant end and the air inlet, which increases the risk of inert gas leakage and increases the time required for installation. Utility Model Content

[0005] In order to solve the technical problem mentioned in the background technology that in the prior art, pressure reducing valves and filters are added at the plant end and the air inlet, which increases the risk of inert gas leakage and increases the time required for installation, a ventilation structure of a silicon carbide crystal growth equipment is provided to solve the above problems.

[0006] To achieve the above purpose, the specific technical solution of the ventilation structure of the silicon carbide crystal growth equipment of the utility model is as follows:

[0007] A ventilation structure of silicon carbide crystal growth equipment includes an integrated board, a main line is arranged on the integrated board, a first branch line and a second branch line are respectively connected to the main line, an end of the first branch line away from the main line is connected to nitrogen, and an end of the second branch line away from the main line is connected to argon. A pneumatic triplet and a valve island are also arranged on the integrated board, compressed air flows through the pneumatic triplet and the valve island, and the opening or closing of the first branch line and the second branch line is controlled by the compressed air.

[0008] Furthermore, it also includes a third branch, one end of the third branch is connected to the main line, and the other end of the third branch is connected to the second branch.

[0009] Furthermore, low-flow argon gas flows through the second branch, which flows into the main pipeline and is mixed with nitrogen before being output. High-flow argon gas flows through the third branch, which is used to open and inflate the silicon carbide furnace body.

[0010] Furthermore, it also includes a fourth branch, which is connected to the main pipe, and one end of the fourth branch away from the main pipe is connected to hydrogen.

[0011] Furthermore, a first pneumatic diaphragm valve and a first manual diaphragm valve are arranged on the first branch, the first pneumatic diaphragm valve is arranged close to the main line, and the first manual diaphragm valve is arranged far away from the main line; a second pneumatic diaphragm valve and a second manual diaphragm valve are arranged on the second branch, the second pneumatic diaphragm valve is arranged close to the main line, and the second manual diaphragm valve is arranged far away from the main line; a third pneumatic diaphragm valve is arranged on the third branch, and the third pneumatic diaphragm valve is arranged close to the main line.

[0012] Furthermore, it also includes a first gas flow controller, a second gas flow controller and a third gas flow controller. The first gas flow controller is arranged between the first pneumatic diaphragm and the first manual diaphragm valve, the second gas flow controller is arranged between the second pneumatic diaphragm valve and the second manual diaphragm valve, and the third gas flow controller is arranged at one end of the third branch away from the main line.

[0013] Furthermore, it also includes a first pressure reducing valve and a second pressure reducing valve, the first pressure reducing valve is arranged between the first gas flow controller and the first manual diaphragm valve, the second pressure reducing valve is arranged between the second gas flow controller and the second manual diaphragm valve, and the end of the third branch away from the main line is connected between the second gas flow controller and the second pressure reducing valve.

[0014] Furthermore, it also includes a first filter and a second filter, the first filter is arranged between the first pressure reducing valve and the first manual diaphragm valve, and the second filter is arranged between the second pressure reducing valve and the second manual diaphragm valve.

[0015] Furthermore, the main line is connected to the first branch line, the second branch line, the third branch line and the fourth branch line through VCR connectors.

[0016] Furthermore, the integrated board is an aluminum board.

[0017] The ventilation structure of the silicon carbide crystal growth equipment of the utility model has the following advantages:

[0018] A main line is provided on the integrated board, the main line is respectively connected to a first branch and a second branch, the end of the first branch away from the main line is connected to nitrogen, and the end of the second branch away from the main line is connected to argon. A pneumatic triplet and a valve island are also provided on the integrated board. Compressed air flows through the pneumatic triplet and the valve island. The opening or closing of the first branch and the second branch is controlled by compressed air. The first branch and the second branch respectively connected to nitrogen and argon are integrated into the integrated board, thereby ensuring the stability of the gas delivery system during the crystal growth process and saving installation time on the factory side, effectively preventing gas leakage during the connection process, and reducing the risk of gas leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 The utility model is a schematic diagram of the ventilation structure of the silicon carbide crystal growth equipment.

[0020] Description of the markings in the figure:

[0021] 1. Integrated board; 2. Main line; 3. First branch; 31. First pneumatic diaphragm valve; 32. First manual diaphragm valve; 33. First gas flow controller; 34. First pressure reducing valve; 35. First filter; 4. Second branch; 41. Second pneumatic diaphragm valve; 42. Second manual diaphragm valve; 43. Second gas flow controller; 44. Second pressure reducing valve; 45. Second filter; 5. Third branch; 51. Third pneumatic diaphragm valve; 52. Third gas flow controller; 6. Fourth branch; 61. Fourth pneumatic diaphragm valve; 7. Pneumatic triplex; 8. Valve island. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.

[0023] Those skilled in the art will appreciate that, although some embodiments herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention and form different embodiments. For example, in the claims, any one of the claimed embodiments may be used in any combination.

[0024] Please refer to the attached Figure 1 The invention describes the ventilation structure of the silicon carbide crystal growth equipment of the present invention.

[0025] like Figure 1 As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model includes an integrated board 1, on which a main line 2 is provided, and the main line 2 is respectively connected to a first branch line 3 and a second branch line 4, the first branch line 3 is connected to nitrogen at one end away from the main line 2, and the second branch line 4 is connected to argon at one end away from the main line 2. The integrated board 1 is also provided with a pneumatic triplet 7 and a valve island 8, and compressed air flows through the pneumatic triplet 7 and the valve island 8, and the opening or closing of the first branch line 3 and the second branch line 4 is controlled by the compressed air. In this embodiment, the integrated board 1 is an aluminum plate, which is used to carry the overall panel of the parts, and has many advantages such as easy processing, good electrical and thermal conductivity, light weight and high strength, corrosion resistance and low cost. The pneumatic triplet 7 is used to regulate and filter compressed air, and provide compressed air for the pneumatic diaphragm valve in the assembly and other air control components in the silicon carbide crystal growth equipment. The valve island 8 is used to control the direction of compressed air in the system, and automatically and accurately control the opening or closing of the first branch line 3 and the second branch line 4.

[0026] A main line 2 is provided on the integrated board 1, and the main line 2 is respectively connected to a first branch line 3 and a second branch line 4, the end of the first branch line 3 away from the main line 2 is connected to nitrogen, and the end of the second branch line 4 away from the main line 2 is connected to argon. A pneumatic triplet 7 and a valve island 8 are also provided on the integrated board 1. Compressed air flows through the pneumatic triplet 7 and the valve island 8. The opening or closing of the first branch line 3 and the second branch line 4 are controlled by compressed air. The first branch line 3 and the second branch line 4 respectively connected to nitrogen and argon are integrated into the integrated board 1 to ensure the stability of the gas delivery system during the crystal growth process and save installation time on the factory side. The integrated board 1 is directly taken to the equipment side for use, and the integrated board 1 is connected to the inert gas, which effectively prevents gas leakage during the connection process and reduces the risk of gas leakage.

[0027] Further, if Figure 1As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model also includes a third branch 5, one end of the third branch 5 is connected to the main line 2, and the other end of the third branch 5 is connected to the second branch 4. A low-flow argon gas flows on the second branch 4, and the low-flow argon gas on the second branch 4 flows into the main line 2 and is output after mixing with nitrogen. A high-flow argon gas flows on the third branch 5, and the high-flow argon gas on the third branch 5 is used to open and inflate the silicon carbide furnace body. When the vacuum furnace body of the silicon carbide crystal growth equipment is filled with inert gas, nitrogen and the low-flow argon gas on the second branch 4 are mixed in the main line 2 and then enter the vacuum furnace body to grow silicon carbide crystals. After completion, since the silicon carbide crystal growth equipment is in a vacuum state, it is necessary for nitrogen and the low-flow argon gas on the second branch 4 to stop entering the vacuum furnace body, and a high-flow argon gas on the third branch 5 is required to open and inflate the silicon carbide furnace body.

[0028] Further, if Figure 1 As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model also includes a fourth branch 6, the fourth branch 6 is connected to the main line 2, and the end of the fourth branch 6 away from the main line 2 is connected to hydrogen. The fourth branch 6 is provided to facilitate adaptation to the use of different gases.

[0029] Further, if Figure 1 As shown, the first branch 3 is provided with a first pneumatic diaphragm valve 31 and a first manual diaphragm valve 32, the first pneumatic diaphragm valve 31 is provided close to the main line 2, and the first manual diaphragm valve 32 is provided away from the main line 2, the second branch 4 is provided with a second pneumatic diaphragm valve 41 and a second manual diaphragm valve 42, the second pneumatic diaphragm valve 41 is provided close to the main line 2, and the second manual diaphragm valve 42 is provided away from the main line 2, and the third branch 5 is provided with a third pneumatic diaphragm valve 51, and the third pneumatic diaphragm valve 51 is provided close to the main line 2. During the crystal growth process, the first pneumatic diaphragm valve 31, the second pneumatic diaphragm valve 41 and the third pneumatic diaphragm valve 51 are connected to the control system of the whole machine, and automatically realize the opening or closing of the first branch 3, the second branch 4 and the third branch 5 respectively. The first manual diaphragm valve 32 and the second manual diaphragm valve 42 respectively realize the opening or closing of the first branch 3, the second branch 4 and the third branch 5 manually. Similarly, a fourth pneumatic diaphragm valve 61 may also be provided on the fourth branch 6 to control the opening or closing of the fourth branch 6 .

[0030] Further, if Figure 1As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model also includes a first gas flow controller 33, a second gas flow controller 43 and a third gas flow controller 52. The first gas flow controller 33 is arranged between the first pneumatic diaphragm and the first manual diaphragm valve 32, the second gas flow controller 43 is arranged between the second pneumatic diaphragm valve 41 and the second manual diaphragm valve 42, and the third gas flow controller 52 is arranged at the end of the third branch 5 away from the main line 2. The first gas flow controller 33, the second gas flow controller 43 and the third gas flow controller 52 have real-time monitoring and feedback functions, and can continuously adjust the output to cope with changes in the external environment or changes in process parameters, maintain the stability of the flow, and make the gas transportation in the crystal growth process more controllable.

[0031] Further, if Figure 1 As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model also includes a first pressure reducing valve 34 and a second pressure reducing valve 44. The first pressure reducing valve 34 is arranged between the first gas flow controller 33 and the first manual diaphragm valve 32, and the second pressure reducing valve 44 is arranged between the second gas flow controller 43 and the second manual diaphragm valve 42. The end of the third branch 5 away from the main line 2 is connected between the second gas flow controller 43 and the second pressure reducing valve 44. The first pressure reducing valve 34 and the second pressure reducing valve 44 are used to adjust the gas pressure in the first branch 3 and the second branch 4 respectively, so that the pressure value of the gas system can better meet the process requirements;

[0032] Further, if Figure 1 As shown, the ventilation structure of the silicon carbide crystal growth equipment in the utility model further includes a first filter 35 and a second filter 45. The first filter 35 is arranged between the first pressure reducing valve 34 and the first manual diaphragm valve 32, and the second filter 45 is arranged between the second pressure reducing valve 44 and the second manual diaphragm valve 42. The first filter 35 and the second filter 45 are used to filter solid particles in the gas in the first branch 3 and the second branch 4, respectively, to prevent them from entering the pipeline or equipment, thereby protecting the equipment from damage or blockage by particles.

[0033] Further, if Figure 1 As shown, the main line 2 is connected to the first branch line 3, the second branch line 4, the third branch line 5 and the fourth branch line 6 via VCR connectors.

[0034] The ventilation structure of the silicon carbide crystal growth equipment in the utility model adopts an integrated design, and the parts required by the factory service end are uniformly placed on the integrated board 1, and the integrated board 1 is placed on the equipment end. The installation time of the factory service end is greatly saved, and the required pressure reducing valve and filter are installed on the equipment to reduce the risk of leakage of special gas at the factory service end, which greatly ensures the safety of production.

[0035] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation methods of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all implementation methods here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A ventilation structure for silicon carbide crystal growth equipment, characterized in that: The invention comprises an integrated board, on which a main line is arranged, and a first branch line and a second branch line are respectively connected to the main line, one end of the first branch line away from the main line is connected to nitrogen, and one end of the second branch line away from the main line is connected to argon. A pneumatic triplet and a valve island are also arranged on the integrated board, and compressed air flows through the pneumatic triplet and the valve island, and the opening or closing of the first branch line and the second branch line is controlled by the compressed air.

2. The ventilation structure of the silicon carbide crystal growth equipment according to claim 1, characterized in that: It also includes a third branch, one end of the third branch is connected to the main branch, and the other end of the third branch is connected to the second branch.

3. The ventilation structure of the silicon carbide crystal growth equipment according to claim 2, characterized in that: The second branch has low-flow argon gas flowing through it, which flows into the main line and is mixed with nitrogen before being output; the third branch has high-flow argon gas flowing through it, which is used to open and inflate the silicon carbide furnace body.

4. The ventilation structure of the silicon carbide crystal growth equipment according to claim 1, characterized in that: The fourth branch is also included. The fourth branch is connected to the main pipe, and one end of the fourth branch away from the main pipe is connected to hydrogen.

5. The ventilation structure of the silicon carbide crystal growth equipment according to claim 2, characterized in that: A first pneumatic diaphragm valve and a first manual diaphragm valve are arranged on the first branch, the first pneumatic diaphragm valve is arranged close to the main line, and the first manual diaphragm valve is arranged far away from the main line. A second pneumatic diaphragm valve and a second manual diaphragm valve are arranged on the second branch, the second pneumatic diaphragm valve is arranged close to the main line, and the second manual diaphragm valve is arranged far away from the main line. A third pneumatic diaphragm valve is arranged on the third branch, and the third pneumatic diaphragm valve is arranged close to the main line.

6. The ventilation structure of the silicon carbide crystal growth equipment according to claim 5, characterized in that: It also includes a first gas flow controller, a second gas flow controller and a third gas flow controller. The first gas flow controller is arranged between the first pneumatic diaphragm and the first manual diaphragm valve, the second gas flow controller is arranged between the second pneumatic diaphragm valve and the second manual diaphragm valve, and the third gas flow controller is arranged at one end of the third branch away from the main line.

7. The ventilation structure of the silicon carbide crystal growth equipment according to claim 6, characterized in that: It also includes a first pressure reducing valve and a second pressure reducing valve, the first pressure reducing valve is arranged between the first gas flow controller and the first manual diaphragm valve, the second pressure reducing valve is arranged between the second gas flow controller and the second manual diaphragm valve, and the end of the third branch away from the main line is connected between the second gas flow controller and the second pressure reducing valve.

8. The ventilation structure of the silicon carbide crystal growth equipment according to claim 7, characterized in that: The first filter is arranged between the first pressure reducing valve and the first manual diaphragm valve, and the second filter is arranged between the second pressure reducing valve and the second manual diaphragm valve.

9. The ventilation structure of the silicon carbide crystal growth equipment according to claim 1, characterized in that: The main line is connected to the first branch line, the second branch line, the third branch line and the fourth branch line through VCR joints.

10. The ventilation structure of the silicon carbide crystal growth equipment according to claim 1, characterized in that: The integrated board is an aluminum plate.

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