Semiconductor device
By designing a box and door mechanism with a noise reduction structure in semiconductor equipment, the impact of external mechanical vibration and noise on the operating accuracy of the equipment is solved, and higher equipment stability and reliability are achieved.
Patent Information
- Application Number
- CN202421892923.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-06
- Publication Date
- 2025-05-16
- Estimated Expiration
- 2034-08-06
AI Technical Summary
Under the influence of external mechanical vibration and noise, semiconductor equipment has reduced operating accuracy, resulting in product quality and reliability problems.
A semiconductor device is designed, using a box and a door mechanism with a first and second noise reduction structure. Through the combination of a sound-absorbing layer, a sound-absorbing layer and the board, the sound-absorbing ability of the equipment is improved and the impact of external noise on the equipment is reduced.
It effectively improves the operating accuracy of semiconductor equipment, reduces the impact of the external environment on the equipment, and enhances the stability and reliability of the equipment.
Smart Images

Figure CN222883493U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductors, and in particular, relates to a semiconductor device. Background Art
[0002] In the semiconductor field, semiconductor equipment is a high-precision production equipment with precise internal structure and components, which is very sensitive to vibration. External mechanical vibration may cause the internal components of the equipment to loosen, wear or damage, thus affecting the overall stability and reliability of the equipment. Under the influence of vibration for a long time, the performance of the equipment will gradually decline or even fail. In the semiconductor manufacturing process, the operating accuracy of the equipment directly determines the quality and output of the product. External mechanical vibration may cause deviations in the equipment during processing, measurement or testing, such as decreased wafer cutting accuracy and inconsistent chip size. These deviations will directly affect the performance and reliability of the product, reduce product quality and increase the scrap rate.
[0003] For example, defect detection equipment requires a low-noise, high-cleanliness production environment during operation. However, external mechanical noise, thermal noise, etc. have a significant impact on the accurate operation of semiconductor equipment. Therefore, how to improve the operating accuracy of semiconductor equipment and reduce the impact of the external environment on semiconductor equipment is a major issue to be solved. Utility Model Content
[0004] An embodiment of the present application provides a semiconductor device that can improve the sound insulation and noise reduction capabilities of the semiconductor device and reduce the impact of the external environment on the accuracy of device operation.
[0005] An embodiment of the present application provides a semiconductor device, including: a semiconductor detection mechanism, the semiconductor detection mechanism includes a material port; a box body, the box body includes a box chamber and a box wall surrounding the box chamber, the box wall includes a first noise reduction structure, and a film transmission port is opened on one side of the box wall, the semiconductor detection mechanism is fixedly arranged in the box chamber, and the film transmission port is arranged opposite to the material port; a door mechanism, used to control the switch of the film transmission port, the door mechanism includes a second noise reduction structure.
[0006] According to the semiconductor device provided in the embodiment of the present application, the box wall includes a first sound absorbing layer, a first sound insulating layer and a first main board, the first sound insulating layer is located on the side of the first sound absorbing layer facing away from the box chamber, the first main board is located on the side of the first sound insulating layer facing away from the first sound absorbing layer, a first sound absorbing hole is provided on the side of the first sound absorbing layer facing away from the first sound insulating layer, and the first sound absorbing layer, the first sound insulating layer and the first main board constitute a first noise reduction structure.
[0007] According to the semiconductor equipment provided in the embodiment of the present application, the box body also includes a filtering mechanism, which includes an air filter and an exhaust fan. The air filter is installed on the box wall on the windward side of the box body and is connected to the box chamber. The exhaust fan is installed on the box wall and is connected to the box chamber. The exhaust fan and the air filter form a ventilation channel in the box chamber that runs through the semiconductor detection mechanism.
[0008] According to the semiconductor device provided in the embodiment of the present application, the filtering mechanism also includes a muffler, and the muffler is connected between the box wall and the exhaust fan.
[0009] According to the semiconductor device provided in the embodiment of the present application, the box body further includes a moving mechanism, which is connected to the box wall and is used to move the box body.
[0010] According to the semiconductor device provided in the embodiment of the present application, the box wall includes a top plate, a side wall plate and a bottom plate, the top plate and the bottom plate are arranged opposite to each other, and the side wall plate is connected between the top plate and the bottom plate;
[0011] The moving mechanism includes a connecting rod, a telescopic member and a running wheel. The connecting rod is connected to the side wall plate. The telescopic member is connected between the connecting rod and the running wheel along the height direction of the side wall plate. The moving mechanism includes a moving state and a stationary state. In the moving state, the telescopic member is in an extended state, and the running wheel passes over the bottom plate on the side facing away from the telescopic member; in the stationary state, the telescopic member is in a retracted state, and the running wheel is placed between the extensions of the top plate and the bottom plate.
[0012] According to the semiconductor device provided in the embodiment of the present application, the box body also includes a fixing member, which is mounted on the bottom plate and connected to the semiconductor detection mechanism.
[0013] According to the semiconductor device provided in the embodiment of the present application, the door mechanism includes a driving member, a guide rail assembly and a door panel having a second noise reduction structure, the guide rail assembly includes a pair of guide rails arranged opposite to each other, the pair of guide rails are located on two opposite sides of the film transmission port, the door panel is slidably connected between the pair of guide rails to open and close the film transmission port, and the driving member is connected to the door panel or the guide rail assembly to drive the door panel to slide along the guide rails on the surface of the box wall.
[0014] According to the semiconductor device provided in the embodiment of the present application, the guide rail includes a closing section and an opening section along the length direction, the closing section is opposite to the film transmission opening, and the matching clearance between the door panel and the box wall is larger in the opening section than in the closing section.
[0015] According to the semiconductor equipment provided in the embodiment of the present application, the guide rail includes a guide member arranged along the length direction, the guide member and the box wall form a guide groove, the groove spacing of the guide groove gradually decreases from the direction close to the door closing section to the direction away from the door closing section; guide wheels are arranged on the opposite sides of the door panel, and the guide wheels are placed in the guide grooves.
[0016] According to the semiconductor device provided in the embodiment of the present application, the door mechanism includes a second sound absorbing layer, a second sound insulating layer and a second main board, the second sound insulating layer is located on the side of the second sound absorbing layer facing away from the box chamber, the second main board is located on the side of the second sound insulating layer facing away from the second sound absorbing layer, a second sound absorbing hole is provided on the side of the second sound absorbing layer facing away from the second sound insulating layer, and the second sound absorbing layer, the second sound insulating layer and the second main board constitute a second noise reduction structure.
[0017] In the semiconductor device of the embodiment of the present application, a semiconductor detection mechanism is arranged in a box chamber of a box body, a film transmission port is arranged on the box wall to ensure the normal operation of the semiconductor detection mechanism, and a door mechanism with a second noise reduction structure seals the film transmission port for noise reduction. The box wall and door mechanism with a first noise reduction structure enhance the sound insulation and noise reduction effect of the semiconductor detection mechanism, reduce the influence of external noise on the semiconductor detection mechanism, and improve the working accuracy of the semiconductor detection mechanism. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0019] Figure 1 A schematic diagram of the structure of a semiconductor device provided by some embodiments of the present application is shown;
[0020] Figure 2 One of the schematic diagrams of the box structure provided by some embodiments of the present application is shown;
[0021] Figure 3 The second schematic diagram of the box structure provided by some embodiments of the present application is shown;
[0022] Figure 4 The third schematic diagram of the box structure provided by some embodiments of the present application is shown;
[0023] Figure 5 A partial cross-sectional view of a first noise reduction structure provided by some embodiments of the present application is shown;
[0024] Figure 6 A partial cross-sectional view of another first noise reduction structure provided in some embodiments of the present application is shown;
[0025] Figure 7 A schematic diagram of the door mechanism structure provided in some embodiments of the present application is shown.
[0026] Reference numerals:
[0027] 100: box body; 101: top plate; 102: side wall plate; 103: bottom plate; 104: film transmission port;
[0028] 105: box chamber; 106: box wall; 110: fixing piece; 120: first sound absorbing layer; 130: first sound insulating layer; 140: first main board; 150: first sound absorbing hole; 141: third main board; 142: fourth main board; 143: through hole.
[0029] 200: door mechanism; 201: support plate; 202: stop bar; 203: guide groove; 210: door plate; 211: guide wheel; 220: guide rail assembly; 221: door closing section; 222: door opening section; 223: guide member; 224: guide rail; 230: driving member;
[0030] 300: filtering mechanism; 301: air filter; 302: exhaust fan; 303: silencer;
[0031] 400: moving mechanism; 401: connecting rod; 402: telescopic member; 403: walking wheel;
[0032] 500: Semiconductor testing agency. DETAILED DESCRIPTION
[0033] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.
[0034] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.
[0035] During the semiconductor production process, many types of noise are generated, which mainly come from the inside of the semiconductor device and the production environment. The following are some of the main types of noise and their characteristics:
[0036] 1. Thermal noise, also known as Johnson noise, is generated by the thermal motion disturbance of conductor electrons. When the conductor is heated, the thermal motion of the electrons increases, causing the motion of the electrons under the action of the electric field to be randomly disturbed, thus generating thermal noise. The spectrum of thermal noise is flat, that is, it has a uniform power spectrum density, so it is also called white noise. Its size is related to temperature and resistance value, and increases with the increase of temperature and resistance.
[0037] 2. Shot noise is generated by the random fluctuations of the motion of charged particles inside a conductor. When electrons cross a potential barrier (such as a PN junction) in a semiconductor, they release stored energy and generate tiny current pulses. The randomness of these pulses causes shot noise. The frequency spectrum of shot noise is also flat and is related to current but not to temperature. In semiconductor devices, the amplitude of shot noise is usually more significant than thermal noise.
[0038] 3. Flicker noise (1 / fNoise) is also called 1 / f noise or contact noise, and its amplitude increases as the frequency decreases. This noise may be related to factors such as the imperfection of the semiconductor crystal structure, surface and interface defects, and carrier scattering. Flicker noise is particularly significant in the low-frequency range and has a great impact on the performance of resistors and semiconductor devices. The level of flicker noise can be reduced by optimizing the process and structural design of semiconductor devices.
[0039] 4. Burst noise (Burst Noise, Popcorn Noise) refers to noise that appears as spikes or pulses in the time domain. Its generation mechanism may be related to the contact, barrier tunneling, transient phenomena, etc. in semiconductor devices. Burst noise has a great impact on the signal-to-noise ratio in analog circuits, so corresponding suppression measures need to be taken. The occurrence of burst noise can be reduced by improving the manufacturing process and packaging technology of semiconductor devices.
[0040] 5. Mechanical noise: Precision machinery and equipment in semiconductor factories will generate a lot of mechanical noise during operation due to friction, vibration and impact of mechanical parts. These noises mainly come from the motors, bearings, gears and other transmission parts of the equipment. In order to maintain the cleanliness, temperature and humidity requirements of the semiconductor production environment, factories are usually equipped with a large number of fans and ventilation equipment. These equipment will generate air flow noise during operation, which is also an important part of mechanical noise. In the semiconductor production process, the transportation and handling of materials is also an important part of the generation of mechanical noise. The operation of transportation vehicles, handling machinery and other equipment will generate noise.
[0041] In summary, the types of noise generated in the semiconductor production process are diverse and complex, and these noises have a significant impact on the performance and stability of semiconductor devices. Therefore, in the design, manufacturing and use of semiconductor devices, it is necessary to fully consider the impact of various types of noise and take corresponding suppression measures to improve the performance and reliability of semiconductor devices.
[0042] In order to reduce the impact of noise during the production process on the operating accuracy of semiconductor equipment, the existing technology uses sound insulation boards to isolate the equipment, but it cannot be completely closed, the noise reduction effect is poor, and it occupies a large area. There is also an existing technology to build a soundproof room to place the semiconductor equipment in it, but the cost is high, and it is not conducive to the transmission of semiconductor products between various stations on the production line, which is not conducive to the displacement of equipment and reduces production efficiency.
[0043] In order to solve the problems in the prior art, an embodiment of the present application provides a semiconductor device. The semiconductor device provided by the embodiment of the present application is first introduced below.
[0044] Figure 1 shows a schematic diagram of the structure of a semiconductor device provided by some embodiments of the present application, Figure 2 One of the structural schematic diagrams of the box 100 provided in some embodiments of the present application is shown; Figure 3 The second schematic diagram of the structure of the box 100 provided in some embodiments of the present application is shown; Figure 4 A third structural schematic diagram of the box 100 provided in some embodiments of the present application is shown.
[0045] like Figures 1 to 4 As shown, an embodiment of the present application provides a semiconductor device, including: a semiconductor detection mechanism 500, a box body 100 and a door mechanism 200, the semiconductor detection mechanism 500 includes a material port; the box body 100 includes a box chamber 105 and a box wall 106 surrounding the box chamber 105, the box wall 106 includes a first noise reduction structure, and a film transmission port 104 is opened on one side of the box wall 106, the semiconductor detection mechanism 500 is fixedly arranged in the box chamber 105, and the film transmission port 104 is arranged opposite to the material port; the door mechanism 200 is used to control the switch of the film transmission port 104, and the door mechanism 200 includes a second noise reduction structure.
[0046] Specifically, the semiconductor detection mechanism 500 can be a detection mechanism, such as a dark field defect detection device or other mechanism for detecting wafer defects. In addition, the semiconductor detection mechanism 500 can also be various devices, equipment or parts thereof in the semiconductor production process, such as an ion implanter, a precipitation mechanism, an etching mechanism, etc. The embodiment of the present application does not impose any restrictions on the specific type of the semiconductor detection mechanism 500. Among them, the semiconductor product can be various raw materials, semi-finished products, finished products, samples, etc. in the semiconductor production process, and can specifically be wafers, silicon wafers, chips, etc. In the production process of semiconductor products, the manipulator is fed into the semiconductor detection mechanism 500 through the material port of the semiconductor detection mechanism 500. After the production is completed, the manipulator takes out the semiconductor product from the material port.
[0047] In order to reduce the impact of external noise on the semiconductor detection mechanism 500, and reduce the impact of the noise generated by the semiconductor detection mechanism 500 on external equipment and the external environment, a closed box 100 is set outside the semiconductor detection mechanism 500, and the semiconductor detection mechanism 500 is placed in a box chamber 105 of the box 100. The box wall 106 of the box 100 isolates the semiconductor detection mechanism 500 from the external environment. The box wall 106 adopts a first noise reduction structure to effectively reduce the impact of the external environment on the semiconductor detection mechanism 500, and also reduces the noise generated by the semiconductor detection mechanism 500 from being transmitted to the external environment.
[0048] In order to facilitate the transportation of semiconductor products, a film transfer port 104 is provided on the box wall 106 of the box body 100. The position of the film transfer port 104 corresponds to the position of the material port of the semiconductor detection mechanism 500, so that the manipulator can reach into the box body 100 and transfer the semiconductor products to the semiconductor detection mechanism 500. The position and opening size of the film transfer port 104 match the working space and working position of the manipulator. In order to improve the overall noise reduction and sound insulation effect of the box body 100, a door mechanism 200 is provided on the box wall 106. The door mechanism 200 is used to open and close the film transfer port 104. The door mechanism 200 can be placed in the box chamber 105 or outside the box chamber 105. After the semiconductor product enters the semiconductor testing mechanism 500 and the robot arm withdraws from the box 100, the door mechanism 200 closes the film transfer port 104, thereby putting the box 100 in a sealed state. The door mechanism 200 adopts a second noise reduction structure, which can effectively improve the sound insulation and noise reduction effect of the door mechanism 200, thereby improving the sound insulation and noise reduction effect of the box 100.
[0049] like Figure 2 As shown, in other embodiments of the present application, in order to improve the position flexibility of the semiconductor detection mechanism 500, the box 100 further includes a moving mechanism 400, which is connected to the box wall 106 and is used to move the box 100. The moving mechanism 400 realizes the flexible movement of the semiconductor detection mechanism 500, improves the adjustability of the production process of the semiconductor product, and facilitates transportation.
[0050] Further, in some specific embodiments of the present application, Figure 4 As shown, the box wall 106 includes a top plate 101, a side wall plate 102 and a bottom plate 103, the top plate 101 and the bottom plate 103 are arranged opposite to each other, and the side wall plate 102 is connected between the top plate 101 and the bottom plate 103; the moving mechanism 400 includes a connecting rod 401, a telescopic member 402 and a running wheel 403, the connecting rod 401 is connected to the side wall plate 102, and the telescopic member 402 is connected between the connecting rod 401 and the running wheel 403 along the height direction of the side wall plate 102, and the moving mechanism 400 includes a moving state and a stationary state. In the moving state, the telescopic member 402 is in an extended state, and the running wheel 403 passes over the bottom plate 103 on the side facing away from the telescopic member 402; in the stationary state, the telescopic member 402 is in a retracted state, and the running wheel 403 is placed between the extensions of the top plate 101 and the bottom plate 103.
[0051] Specifically, the box wall 106 is composed of a top plate 101, a bottom plate 103 and a side wall plate 102. For example, when the box body 100 is a rectangular parallelepiped, the top plate 101 and the bottom plate 103 are arranged in parallel, the top plate 101 and the bottom plate 103 are rectangular and equal in size, and the side wall plate 102 includes four rectangular plates connected in sequence at the end, and the side wall plate 102 is vertically connected between the top plate 101 and the bottom plate 103, thereby enclosing a closed box chamber 105 with a rectangular interior. Of course, based on the shape of the semiconductor detection mechanism 500, the box body 100 can be other shapes to adapt to the shape of the semiconductor detection mechanism 500 and facilitate the operation of the semiconductor detection mechanism 500.
[0052] In addition, with respect to the side wall plate 102 of the embodiment of the present application, the side wall plate 102 forms an openable maintenance door, which facilitates the cleaning of the box body 100 and the transportation of the semiconductor testing mechanism 500 .
[0053] In order to improve the position flexibility of the semiconductor detection mechanism 500, a moving mechanism 400 is provided on the box wall 106 of the box body 100. For example, the moving mechanism 400 is arranged at four positions of the box body 100 at intervals to ensure the stability of the moving process. In order to ensure the stability of the semiconductor detection mechanism 500 during operation, the moving mechanism 400 has a telescopic function, so that when the moving mechanism 400 is in a moving state, the running wheel 403 is extended through the telescopic member 402 and contacts the ground, so that a gap is formed between the bottom plate 103 and the ground. In the static state of the moving mechanism 400, the running wheel 403 is retracted through the telescopic member 402, the running wheel 403 is spaced apart from the ground, and the bottom plate 103 contacts the ground surface, thereby improving the overall stability of the semiconductor device.
[0054] Specifically, in order to facilitate the telescopic movement of the mobile mechanism 400, the mobile mechanism 400 is installed on the side wall plate 102 of the box wall 106, and space is provided for the retraction of the mobile mechanism 400. One end of the connecting rod 401 of the mobile mechanism 400 is connected to the side of the side wall plate 102 away from the top plate 101, the connecting rod 401 protrudes from the side wall plate 102 and extends, and the other end of the connecting rod 401 is suspended. One end of the telescopic member 402 is connected to the connecting rod 401, the other end of the telescopic member 402 is extended to the side where the bottom plate 103 is located, and the other end of the telescopic member 402 is connected to the running wheel 403. The running wheel 403 is controlled by the telescopic movement of the telescopic member 402 to cross the bottom plate 103 and contact the ground, and retract to between the top plate 101 and the bottom plate 103, so that the bottom plate 103 is in direct contact with the ground.
[0055] like Figure 1 As shown, in some other optional embodiments of the present application, the box body 100 further includes a fixing member 110, which is mounted on the bottom plate 103, and the fixing member 110 is connected to the semiconductor detection mechanism 500. The fixing member 110 can be fixedly connected or detachably connected to the semiconductor detection mechanism 500, for example, the fixing member 110 can be bolted, clamped, or plugged with the semiconductor detection mechanism 500 to prevent the semiconductor detection mechanism 500 from shifting during the production process. Of course, in other embodiments of the present application, the semiconductor detection mechanism 500 can be directly connected to the box wall 106, for example, the semiconductor detection mechanism 500 is bolted to the bottom plate 103.
[0056] like Figure 2 and Figure 3 As shown, in other embodiments of the present application, the box body 100 also includes a filtering mechanism 300, the filtering mechanism 300 includes an air filter 301 and an exhaust fan 302, the air filter 301 is installed on the box wall 106 on the windward side of the box body 100, and is connected to the box chamber 105, the exhaust fan 302 is installed on the box wall 106, and is connected to the box chamber 105, the exhaust fan 302 and the air filter 301 form a ventilation channel in the box chamber 105 that passes through the semiconductor detection mechanism 500.
[0057] In a semiconductor production plant, in order to ensure that the temperature in the plant is suitable and the air is fresh, a ventilation system is set in the plant, and the ventilation system takes in air from the top of the plant and discharges air from the bottom of the plant to achieve ventilation and heat exchange. In order to improve the ventilation efficiency of the filter mechanism 300, the air inlet direction of the filter mechanism 300 is consistent with the air inlet direction of the entire plant, and therefore, the air filter 301 is set on the box wall 106 on the windward side of the box body 100 to improve the ventilation efficiency in the box chamber 105. For example, the air filter 301 is set on the top plate 101, and a filter port is opened on the top plate 101, and the air filter 301 is connected to the box chamber 105 through the filter port.
[0058] In order to better ventilate the chamber 105, ensure the cleanliness of the working environment of the semiconductor detection mechanism 500, and meet the heat dissipation requirements, the ventilation channel formed between the exhaust fan 302 and the air filter 301 should cross the semiconductor detection mechanism 500. For example, the exhaust fan 302 is installed at a position of the side wall plate 102 away from the top plate 101 to lengthen the length of the ventilation channel. An exhaust port is provided on the side wall plate 102, and the exhaust fan 302 is connected to the chamber 105 through the exhaust port. The air filter 301 filters the air entering the chamber 105, and the exhaust fan 302 extracts the air in the chamber 105 to the outside of the box, thereby forming a circulating ventilation.
[0059] Furthermore, in other optional embodiments of the present application, in order to reduce the impact of the noise generated by the filtering mechanism 300 on the semiconductor detection mechanism 500, the filtering mechanism 300 also includes a muffler 303, and the muffler 303 is connected between the box wall 106 and the exhaust fan 302.
[0060] Figure 5 A partial cross-sectional view of a first noise reduction structure provided by some embodiments of the present application is shown; Figure 6 A partial cross-sectional view of another first noise reduction structure provided in some embodiments of the present application is shown, wherein "" represents a local boundary and does not represent any entity structure.
[0061] like Figure 5 As shown, in one embodiment of the present application, the box wall 106 includes a first sound absorbing layer 120, a first sound insulation layer 130 and a first main board 140. The first sound insulation layer 130 is located on the side of the first sound absorbing layer 120 that is away from the box chamber 105. The first main board 140 is located on the side of the first sound insulation layer 130 that is away from the first sound absorbing layer 120. A first sound absorbing hole 150 is provided on the side of the first sound absorbing layer 120 that is away from the first sound insulation layer 130. The first sound absorbing layer 120, the first sound insulation layer 130 and the first main board 140 constitute a first noise reduction structure.
[0062] The top plate 101, the bottom plate 103 and the side wall plate 102 of the box wall 106 may all be provided with a first noise reduction structure, and the first plate 140 is the shell material of the box body 100, such as metal, alloy, etc. The first sound insulation layer 130 is formed of a material with a higher density, such as cement, resin, etc., which is used to isolate external noise. The first sound absorption layer 120 is formed of a porous material, such as glass wool, polyester fiber, felt, etc. Of course, the first sound absorption layer 120 can select a material with a sound absorption frequency range corresponding to the noise frequency of the semiconductor detection mechanism 500. The first sound absorption layer 120 is provided with a first sound absorption hole 150 on the side facing the box chamber 105 to improve the sound absorption effect.
[0063] In order to facilitate the installation of the first noise reduction structure, such as Figure 6As shown, in some other embodiments of the present application, the box wall 106 includes a first noise reduction structure and a wall cavity, the first noise reduction structure is arranged in the wall cavity, a third plate 141 is arranged on the side of the first sound absorbing layer 120 close to the box chamber 105, a fourth plate 142 is arranged on the side of the first plate 140 away from the box chamber 105, the third plate 141 and the fourth plate 142 form a wall cavity, and the third plate 141 may be provided with a through hole 143 connected to the box chamber 105. Alternatively, a mounting plate is arranged on the side of the first sound absorbing layer 120 away from the first sound insulation layer 130, and the mounting plate is connected to the first plate 140 to form the box wall 106. For example, a first sound absorbing hole 150 is opened on the mounting plate to facilitate the first sound absorbing layer 120 to absorb the noise in the box chamber 105.
[0064] Similarly, in an optional embodiment of the present application, the door mechanism 200 includes a second sound absorbing layer, a second sound insulating layer and a second main board, the second sound insulating layer is located on the side of the second sound absorbing layer facing away from the box chamber 105, the second main board is located on the side of the second sound insulating layer facing away from the second sound absorbing layer, and a second sound absorbing hole is provided on the side of the second sound absorbing layer facing away from the second sound insulating layer; the second sound absorbing layer, the second sound insulating layer and the second main board constitute a second noise reduction structure. The second noise reduction structure can be the same as the first noise reduction structure, so it will not be described in detail.
[0065] Figure 7 A schematic structural diagram of a door mechanism 200 provided in some embodiments of the present application is shown.
[0066] like Figure 7 As shown, in some embodiments of the present application, the door mechanism 200 includes a driving member 230, a guide rail assembly 220 and a door panel 210 having a second noise reduction structure, the guide rail assembly 220 includes a pair of guide rails 224 arranged opposite to each other, the pair of guide rails 224 are located on opposite sides of the film transmission port 104, the door panel 210 is slidably connected between the pair of guide rails 224 to open and close the film transmission port 104, the driving member 230 is connected to the door panel 210 or the guide rail assembly 220, and is used to drive the door panel 210 to move along the guide rails 224 on the surface of the box wall 106.
[0067] In order to improve the noise reduction effect of the box 100, the film transmission opening 104 is sealed, and the size of the door plate 210 is larger than the size of the film transmission opening 104, so that the film transmission opening 104 can be better covered and sealed. The guide rail assembly 220 increases the sealing between the door plate 210 and the box wall 106, and the driving member 230 drives the guide rail assembly 220 and the door plate 210 to slide relative to each other, thereby realizing the opening and closing of the film transmission opening 104.
[0068] For example, the driving member 230 may be a telescopic cylinder, which is connected to the door panel 210 and drives the door panel 210 to move along the guide rail 224, wherein the telescopic cylinder can drive the door panel 210 to move horizontally or vertically. The telescopic cylinder may be an air cylinder to reduce noise. Alternatively, the guide rail assembly 220 is a gear rack structure, and the driving member 230 is a motor, which drives the gear rack to move to achieve the sliding of the door panel 210 relative to the guide rail 224.
[0069] With respect to the guide rail 224 of the present application, in some embodiments of the present application, the guide rail 224 includes a door closing section 221 and a door opening section 222 along the length direction, and the door closing section 221 is opposite to the film transmission port 104; the matching clearance between the door panel 210 and the box wall 106 is larger in the door opening section 222 than in the door closing section 221. In other words, when the door panel 210 is in the door opening section 222, the matching clearance between the door panel 210 and the box wall 106 is a first clearance, and when the door panel 210 is in the door closing section 221, the matching clearance between the door panel 210 and the box wall 106 is a second clearance, and the first clearance is larger than the second clearance.
[0070] The driving member 230 drives the door panel 210 to slide between the door opening section 222 and the door closing section 221. In order to improve the sealing performance between the door panel 210 and the transmission port 104, the matching clearance of the door panel 210 in the door closing section 221 is smaller than the matching clearance in the door opening section 222. The smaller the clearance between the door panel 210 and the box wall 106, the higher the sealing performance and the better the noise reduction effect. The matching clearance between the door panel 210 and the box wall 106 can be achieved by the structure of the guide rail 224 or by the structure of the door panel 210. For example, the thickness of the door panel 210 is changed to achieve different clearances between the door panel 210 and the box wall 106.
[0071] When the door panel 210 is completely placed in the door opening section 222 , the film transmission opening 104 is completely exposed. When the door panel 210 is completely placed in the door closing section 221 , the film transmission opening 104 is completely covered by the door panel 210 .
[0072] In some embodiments of the present application, in order to improve the sealing performance of the door panel 210, the guide rail 224 includes a guide member 223 arranged along the length direction, the guide member 223 and the box wall 106 form a guide groove 203, and the groove spacing of the guide groove 203 gradually decreases from the direction close to the door closing section 221 to the direction away from the door closing section 221; the opposite side of the door panel 210 is provided with a guide wheel 211, and the guide wheel 211 is placed in the guide groove 203. In other words, the matching clearance between the guide wheel 211 and the guide groove 203 in the door opening section 222 is greater than the matching clearance between the guide wheel 211 and the guide groove 203 in the door closing section 221.
[0073] For example, the guide member 223 includes a stop bar 202 and a support plate 201, the stop bar 202 is installed on the support plate 201, the support plate 201 can be in a triangular prism shape for greater stability, one side of the support plate 201 is connected to the box wall 106, and the other side of the support plate 201 is installed with the stop bar 202, and the stop bar 202 and the box wall 106 form a guide groove 203. Of course, in other embodiments of the present application, the guide groove 203 can be formed by other structures, for example, the guide groove 203 is formed by a depression on the support plate 201, and the guide rail 224 and the door panel 210 can also adopt other structures to increase the matching clearance between the door panel 210 and the box wall 106.
[0074] In order to provide a clamping force for the door panel 210 , a hook is formed on the box wall 106 at the end of the stop bar 202 close to the film transmission port 104 , so that when the door panel 210 runs to the end of the stop bar 202 , the hooked stop bar 202 presses the door panel 210 against the box wall 106 .
[0075] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.
Claims
1. A semiconductor device, characterized in that: include: A semiconductor detection mechanism, the semiconductor detection mechanism comprising a material port; A box body, the box body comprises a box chamber and a box wall surrounding the box chamber, the box wall comprises a first noise reduction structure, one side of the box wall is provided with a film transmission port, the semiconductor detection mechanism is fixedly arranged in the box chamber, and the film transmission port is arranged opposite to the material port; A door mechanism is used to control the switch of the film transmission port, and the door mechanism includes a second noise reduction structure.
2. The semiconductor device according to claim 1, wherein: The box wall includes a first sound-absorbing layer, a first sound-insulating layer and a first main board. The first sound-insulating layer is located on the side of the first sound-absorbing layer facing away from the box chamber. The first main board is located on the side of the first sound-insulating layer facing away from the first sound-absorbing layer. A first sound-absorbing hole is provided on the side of the first sound-absorbing layer facing away from the first sound-insulating layer. The first sound-absorbing layer, the first sound-insulating layer and the first main board constitute the first noise reduction structure.
3. The semiconductor device according to claim 1, wherein: The box body also includes a filtering mechanism, which includes an air filter and an exhaust fan. The air filter is installed on the box wall on the windward side of the box body and is connected to the box chamber. The exhaust fan is installed on the box wall and is connected to the box chamber. The exhaust fan and the air filter form a ventilation channel in the box chamber that passes through the semiconductor detection mechanism.
4. The semiconductor device according to claim 3, characterized in that The filtering mechanism also includes a silencer, which is connected between the box wall and the exhaust fan.
5. The semiconductor device according to claim 1, wherein: The box body further comprises a moving mechanism, which is connected to the box wall and is used for moving the box body.
6. The semiconductor device according to claim 5, characterized in that The box wall comprises a top plate, a side wall plate and a bottom plate, the top plate and the bottom plate are arranged opposite to each other, and the side wall plate is connected between the top plate and the bottom plate; The moving mechanism includes a connecting rod, a telescopic member and a running wheel, the connecting rod is connected to the side wall plate, the telescopic member is connected between the connecting rod and the running wheel along the height direction of the side wall plate, and the moving mechanism includes a moving state and a stationary state. In the moving state, the telescopic member is in an extended state, and the running wheel passes over the bottom plate on the side facing away from the telescopic member; in the stationary state, the telescopic member is in a retracted state, and the running wheel is placed between the extensions of the top plate and the bottom plate.
7. The semiconductor device according to claim 6, characterized in that The box body also includes a fixing member, which is mounted on the bottom plate and connected to the semiconductor detection mechanism.
8. The semiconductor device according to any one of claims 1 to 7, characterized in that The door mechanism includes a driving member, a guide rail assembly and a door panel having the second noise reduction structure, the guide rail assembly includes a pair of guide rails arranged opposite to each other, the pair of guide rails are located on opposite sides of the film transmission port, the door panel is slidably connected between the pair of guide rails to open and close the film transmission port, the driving member is connected to the door panel or the guide rail assembly, and is used to drive the door panel to slide along the guide rails on the surface of the box wall.
9. The semiconductor device according to claim 8, characterized in that The guide rail includes a door closing section and a door opening section along the length direction, the door closing section is opposite to the film transmission port, and the matching clearance between the door panel and the box wall is larger in the door opening section than in the door closing section.
10. The semiconductor device according to claim 9, characterized in that The guide rail includes a guide member arranged along the length direction, the guide member and the box wall form a guide groove, the groove spacing of the guide groove gradually decreases from the direction close to the door closing section to the direction away from the door closing section; the opposite sides of the door panel are provided with guide wheels, and the guide wheels are placed in the guide grooves.
11. The semiconductor device according to any one of claims 1 to 7, characterized in that The door mechanism includes a second sound absorbing layer, a second sound insulating layer and a second main board, the second sound insulating layer is located on the side of the second sound absorbing layer facing away from the box chamber, the second main board is located on the side of the second sound insulating layer facing away from the second sound absorbing layer, a second sound absorbing hole is opened on the side of the second sound absorbing layer facing away from the second sound insulating layer, and the second sound absorbing layer, the second sound insulating layer and the second main board constitute the second noise reduction structure.
Citation Information
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CN121438782A