Power supply control circuit for nonvolatile flash memory programming

Abstract

The utility model discloses a power supply control circuit for nonvolatile flash memory programming, and relates to the technical field of power supply management. The power supply control circuit for the nonvolatile flash memory programming comprises a nonvolatile flash memory chip, a power supply circuit, a power supply circuit and a control circuit, the at least one voltage converter is electrically connected with the nonvolatile flash memory chip; the plurality of power supply rails are electrically connected with the voltage converter; wherein the at least one voltage converter is used for controlling and specifying the power supply rail to supply power to the nonvolatile flash memory chip, so that other parts of the system are not influenced. According to the utility model, the problems that in the prior art, power supplies of other parts of the system are usually cut off manually, and the method is low in efficiency and easy to make mistakes are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of power management, and particularly relates to a power control circuit for non-volatile flash programming. Background Art

[0002] In many electronic devices, non-volatile flash memory chips (NOR Flash) are widely used to store data. However, when programming non-volatile flash memory chips, it is necessary to ensure that other parts of the system are not disturbed.

[0003] In the prior art, it is usually achieved by manually disconnecting the power supply of other parts of the system, which has the problems of low efficiency and easy errors. For the above problems, no effective solution has been proposed yet. Summary of the Utility Model

[0004] Purpose of the utility model: To provide a power control circuit for non-volatile flash programming to at least solve one of the problems existing in the above prior art.

[0005] Technical solution: A power control circuit for non-volatile flash programming, comprising:

[0006] A non-volatile flash memory chip;

[0007] At least one voltage converter, electrically connected to the non-volatile flash memory chip; and

[0008] A plurality of power rails, electrically connected to the voltage converter;

[0009] Wherein, at least one of the voltage converters controls the specified power rail to supply power to the non-volatile flash memory chip so that other parts of the system are not affected.

[0010] Preferably, the non-volatile flash memory chip adopts MX25U12835FZ2I, and the non-volatile flash memory chip is electrically connected to the voltage converter through a plurality of signal lines.

[0011] Preferably, the voltage converter is an ideal diode, and the ideal diode adopts LM66100DCKR.

[0012] Preferably, when the voltage of the CE pin of the ideal diode is higher than the input voltage, the P-channel MOSFET is turned off; when the voltage of the CE pin is lower than the input voltage, the P-channel MOSFET is turned on.

[0013] Preferably, the plurality of power rails include: an in-board power rail, a flash memory chip power rail, and an external power supply rail.

[0014] Preferably, the power rails include: VDD_1V8_A, VDD_1V8_NOR, and VCC_SPI_1V8; wherein, VCC_SPI_1V8 is externally powered and is not the same power supply path as VDD_1V8_A.

[0015] Preferably, when in the separate flash programming mode, VDD_1V8_A is disconnected and VCC_SPI_1V8 supplies power, so that the non-volatile flash memory chip is powered and other parts of the system have no power.

[0016] Preferably, the number of at least one of the voltage converters is two.

[0017] Preferably, the input ends of the voltage converters are respectively connected to different power rails, and the output ends are connected to the power rail of the flash memory chip.

[0018] Preferably, it further includes: an external interface, and the external interface is electrically connected to the non-volatile flash memory chip.

[0019] Beneficial effects: In the embodiment of the present application, by adding an ideal diode, at least one of the voltage converters controls the specified power rail to supply power to the non-volatile flash memory chip, so that other parts of the system are not affected, achieving the purpose of separate and directional power supply, thereby realizing the technical effects that the entire system has no power except for the flash and ensuring that the entire system is not affected, and further solving the technical problem in the prior art that usually manual disconnection of the power supply of other parts of the system is used to achieve this, which is inefficient and error-prone. Description of the Drawings

[0020] Figure 1 is a schematic structural diagram of the power control circuit for non-volatile flash programming of the present utility model; and

[0021] Figure 2 is the electrical schematic diagram of the power control circuit for non-volatile flash programming of the present utility model.

[0022] Reference numerals are:

[0023] 10. Non-volatile flash memory chip;

[0024] 20. Voltage converter;

[0025] 30. Power rail. Detailed Embodiments

[0026] To enable those skilled in the art to better understand the solution of this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily have to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances for the embodiments of this application described here. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or are inherent to these processes, methods, products, or devices.

[0028] In addition, the terms "installed", "set up", "provided with", "connected", "linked", "socketed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or there can be internal communication between two devices, components, or parts. For those of ordinary skill in the art, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0029] It should be noted that, without conflict, the embodiments in this application and the features in the embodiments can be combined with each other. The following will detail this application with reference to the drawings and in combination with the embodiments.

[0030] This application relates to a power control circuit for non-volatile flash programming. As Figure 1-2 shown, the power control circuit for non-volatile flash programming includes: a non-volatile flash memory chip 10; the non-volatile flash memory chip 10 is a kind of memory that can retain data without power supply.

[0031] At least one voltage converter 20, electrically connected to the non-volatile flash memory chip 10; used for voltage control and reverse current protection.

[0032] A plurality of power rails 30, electrically connected to the voltage converter 20; capable of achieving a stable power supply effect.

[0033] Among them, at least one of the voltage converters 20 controls the power supply of the specified source rail 30 to the non-volatile flash memory chip 10, so that other parts of the system are not affected.

[0034] Specifically, in the normal operation mode: VDD_1V8_A and VCC_SPI_1V8 are powered simultaneously. The LM66100DCKR controls the on / off of the MOSFET through the voltage of the CE pin to ensure that the current flows to the NOR flash memory chip.

[0035] In the single programming mode: VDD_1V8_A is disconnected, and only VCC_SPI_1V8 is powered. At this time, other parts of the system have no power supply, and only the flash memory chip is powered, ensuring that the programming process is not interfered by other parts.

[0036] When in the scenario of burning the flash alone, the power supply of the entire system can be cut off. And VCC_SPI_1V8 is powered separately. At this time, except for the flash, the entire system has no power supply, which can ensure that the entire system is not affected.

[0037] From the above description, it can be seen that the present application achieves the following technical effects:

[0038] In the embodiment of the present application, by adopting the method of adding an ideal diode, at least one of the voltage converters 20 controls the power supply of the specified power supply rail 30 to the non-volatile flash memory chip, so that other parts of the system are not affected, achieving the purpose of separate directional power supply, thereby realizing the technical effects that except for the flash, the entire system has no power supply and ensuring that the entire system is not affected, and further solving the technical problem in the prior art that usually manually disconnects the power supply of other parts of the system to achieve this, which is inefficient and error-prone.

[0039] Further, the non-volatile flash memory chip 10 adopts MX25U12835FZ2I, and the non-volatile flash memory chip is electrically connected to the voltage converter through multiple signal lines. It can be understood that the pin numbers and functions of MX25U12835FZ2I are as follows: 1. CS# (chip select signal); 2. SO / IO1 (serial data output / input 1); 3. WP / IO2 (write protection / input / output 2); 4. GND (ground); 5. SI / IO0 (serial data input / input / output 0); 6. CLK (clock); 7. HOLD# / RESET# / IO3 (hold / reset / input / output 3); 8. VCC (power supply); 9. EPAD (exposed pad, usually grounded).

[0040] Further, the voltage converter 20 is an ideal diode, and the ideal diode adopts LM66100DCKR.

[0041] It should be noted that the adoption of LM66100DCKR includes but is not limited to the following functions: Low voltage drop: The on-resistance of the MOSFET is much lower than the forward voltage drop of traditional diodes, thus reducing power loss. Directional control: It can precisely control the direction of current to prevent reverse current. Fast switching: It can quickly respond to power supply changes to ensure that the load always receives a stable voltage supply.

[0042] Furthermore, when the voltage of the CE pin of the ideal diode is higher than the input voltage, the P-channel MOSFET is turned off; when the voltage of the CE pin is lower than the input voltage, the P-channel MOSFET is turned on. It can be understood that LM66100DCKR is a single-input, single-output (SISO) integrated ideal diode, which is very suitable for various applications. This device contains a P-channel MOSFET that can operate within an input voltage range of 1.5V to 5.5V, support a maximum continuous current of 1.5A, can operate at temperatures from -40°C to 125°C, and has reverse voltage protection (RVP) to protect mis-wired devices, for example, using a reverse battery.

[0043] This chip works by comparing the voltage of the CE pin and the input voltage: when the voltage of the CE pin is higher than VIN, the device is disabled and the MOSFET is turned off; when the voltage of the CE pin is lower than VIN, the MOSFET is turned on.

[0044] Furthermore, a plurality of the power rails 30 include: an in-board power rail, a flash chip power rail, and an externally powered power rail. It can be understood that it can achieve the effect of providing power in multiple ways.

[0045] Furthermore, the power rail 30 includes: VDD_1V8_A, VDD_1V8_NOR, and VCC_SPI_1V8; among them, VCC_SPI_1V8 is externally powered and is not the same power supply path as VDD_1V8_A. It can be understood that VDD_1V8_NOR supplies power to the flash chip, VDD_1V8_A supplies power to the in-board and powers on the main control chip simultaneously, VCC_SPI_1V8 is externally powered and is not the same power supply path as VDD_1V8_A.

[0046] Furthermore, when in the single flash programming mode, disconnect the power supply of VDD_1V8_A and VCC_SPI_1V8 so that the non-volatile flash chip is powered and the other parts of the system have no power.

[0047] Further, the number of at least one of the voltage converters 20 is two. It can be understood that two LM66100DCKR devices can be used in an ORING configuration similar to a dual-diode ring implementation to ensure blocking of reverse current through an internal voltage comparator, achieving redundant backup and intelligent switching of the power supply.

[0048] Specifically, the inputs (VIN pins) of U84 and U85 are respectively connected to VDD_1V8_A and VCC_SPI_1V8; the outputs (VOUT pins) of U84 and U85 are both connected to VDD_1V8_NOR.

[0049] When both input power supplies are operating normally, the power supply with the higher voltage is preferentially selected, and the other power supply is automatically isolated.

[0050] When one input power supply fails, it automatically switches to the other power supply to ensure stable power supply to VDD_1V8_NOR.

[0051] Further, the input ends of the voltage converter 20 are respectively connected to different power rails 30, and the output end is connected to the power rail of the flash chip. It can be understood that a good electrical connection effect can be achieved.

[0052] Further, it further includes: an external interface, and the external interface is electrically connected to the non-volatile flash chip 10. It can be understood that by providing an external interface, a good information interaction effect can be achieved, thereby ensuring a good data transmission effect.

[0053] The preferred embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings. However, the present invention is not limited to the specific details in the above embodiments. Within the technical concept of the present invention, various equivalent transformations can be made to the technical solutions of the present invention, and these equivalent transformations all fall within the protection scope of the present invention.

Claims

1. A power control circuit for programming non-volatile flash memory, characterized in that: include: Non-volatile flash memory chip; at least one voltage converter electrically connected to the non-volatile flash memory chip; and a plurality of power rails electrically connected to the voltage converter; Wherein, at least one of the voltage converters is used to control the designated power rail to supply power to the non-volatile flash memory chip, so as to perform directional power supply separately.

2. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The non-volatile flash memory chip adopts MX25U12835FZ2I, and the non-volatile flash memory chip is electrically connected to the voltage converter through a plurality of signal lines.

3. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The voltage converter is an ideal diode, and the ideal diode is LM66100DCKR.

4. The power control circuit for programming non-volatile flash memory according to claim 3, characterized in that: When the CE pin voltage of the ideal diode is higher than the input voltage, the P-channel MOSFET tube is turned off; when the CE pin voltage is lower than the input voltage, the P-channel MOSFET tube is turned on.

5. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The plurality of power rails include: an on-board power rail, a flash memory chip power rail and an external power supply rail.

6. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The power rails include: VDD_1V8_A, VDD_1V8_NOR and VCC_SPI_1V8; wherein the VCC_SPI_1V8 is externally powered and is not the same power supply as VDD_1V8_A.

7. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The number of at least one voltage converter is two.

8. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: The input ends of the voltage converter are respectively connected to different power rails, and the output ends are connected to the flash memory chip power rail.

9. The power control circuit for programming non-volatile flash memory according to claim 1, characterized in that: Also includes: An external interface is electrically connected to the non-volatile flash memory chip.

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