Reaction chamber and MPCVD device

Abstract

The utility model relates to the technical field of microwave plasma, in particular to a reaction cavity and an MPCVD device, the reaction cavity comprises an antenna and a sample table with the diameter of phi 1, the end part of the antenna is provided with a first cylinder with the diameter of phi 2, the lower bottom surface of the first cylinder is provided with a circular truncated cone, and the circular truncated cone is provided with a second cylinder with the diameter of phi 2. The diameter of the upper bottom surface of the circular truncated cone is phi 3, the diameter of the lower bottom surface of the circular truncated cone is phi 4, a second cylinder with the diameter of phi 5 is arranged on the lower bottom surface of the circular truncated cone, the reaction cavity capable of enabling a plasma ball to be flatter so as to be suitable for depositing a large-area diamond film is provided, and the MPCVD device comprises the reaction cavity.

Description

Technical Field

[0001] The utility model relates to the technical field of microwave plasma, in particular to a reaction chamber and an MPCVD device. Background Art

[0002] Microwave plasma chemical vapor deposition is an advanced method for preparing high-quality diamond films today. This method requires the use of a microwave plasma chemical vapor deposition device (MPCVD for short). MPCVD introduces the microwaves generated by a microwave generator into the reaction chamber through a waveguide transmission system, and introduces a mixture of methane and hydrogen. Under the excitation of microwaves, a glow discharge is generated in the reaction chamber, ionizing the molecules of the reaction gas and generating plasma, which is deposited on the sample to obtain a diamond film.

[0003] The reaction chamber of the prior art MPCVD device produces a plasma ball that is close to a sphere (see Figure 1 ), which is not suitable for the deposition of large-area diamond films. Utility Model Content

[0004] The purpose of the utility model is to overcome the shortcomings of the prior art and provide a reaction chamber which can make the plasma ball flatter and thus is suitable for depositing a large-area diamond film.

[0005] Another object of the present invention is to provide an MPCVD device, which includes the reaction chamber.

[0006] The purpose of the utility model is achieved through the following technical solutions:

[0007] A reaction chamber, including an antenna and a diameter of Φ 1 The end of the antenna is provided with a diameter of Φ 2 The first cylinder has a truncated cone on its lower bottom surface, and the upper bottom surface diameter and the lower bottom surface diameter of the truncated cone are Φ 3 and Φ 4 The lower bottom surface of the truncated cone is provided with a diameter of Φ 5 The second cylinder.

[0008] Furthermore, the first cylinder, the frustum, the second cylinder and the sample stage are coaxial, and the Φ 2 =Φ 3 , the Φ 4 >Φ 5 >Φ 1 .

[0009] Furthermore, the Φ 5 / Φ 1 =K 1 , the K 1∈(1,1.3]。

[0010] Furthermore, the lower bottom surface of the second cylinder is provided with a diameter of Φ 6 The third cylinder.

[0011] Furthermore, the first cylinder, the frustum, the second cylinder, the third cylinder and the sample stage are coaxial, and the Φ 5 >Φ 6 >Φ 1 .

[0012] Furthermore, the Φ 5 / Φ 6 =K 2 , the Φ 6 / Φ 1 =K 3 , the K 2 ∈(1, 1.4], the K 3 ∈(1,1.3]。

[0013] Furthermore, a chamfer is provided between the bottom surface and the side wall of the reaction chamber, and the diameter of the upper chamber and the diameter of the lower chamber of the reaction chamber are Φ 7 and Φ 8 , the Φ 7 <Φ 8 .

[0014] Furthermore, a circular ring is arranged on the bottom surface of the reaction chamber, and the sample stage is arranged in the circular ring.

[0015] Furthermore, the upper surface of the sample stage is lower than the upper surface of the ring, and the sample stage, the ring and the second cylinder are coaxial.

[0016] An MPCVD device comprises the reaction chamber.

[0017] The utility model has the following advantages:

[0018] A cylinder is arranged at the bottom of one end of the antenna in the reaction chamber, which can make the plasma ball flatter, thereby increasing the coating area and being suitable for depositing a large area of ​​diamond film. In addition, the cylinder can also broaden the frequency bandwidth of the electromagnetic wave. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solution of the implementation of the utility model, the following is a brief introduction to the drawings required for use in the implementation. It should be understood that the following drawings only show certain embodiments of the utility model, and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0020] Figure 1 It is a simulation diagram of the plasma field intensity of the reaction chamber in the prior art;

[0021] Figure 2 It is a cutaway schematic diagram of the reaction chamber of the utility model;

[0022] Figure 3 It is a cross-sectional schematic diagram of the antenna of the utility model;

[0023] Figure 4 This is a simulation diagram of the plasma field strength of the reaction chamber of the utility model;

[0024] In the figure: 1-antenna, 11-first cylinder, 12-cone, 13-second cylinder, 14-third cylinder, 2-sample stage, 3-chamfer, 4-ring. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the implementation of the utility model clearer, the technical solution in the implementation of the utility model will be clearly and completely described below in conjunction with the drawings in the implementation of the utility model. Obviously, the described implementation is only a part of the implementation of the utility model, not all of the implementations. Based on the implementation of the utility model, all other implementations obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0026] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0027] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0028] In the present utility model, unless otherwise clearly specified and limited, the first feature being above or below the second feature may include the first and second features being in direct contact, or may include the first and second features not being in direct contact but being in contact through another feature between them. Moreover, the first feature being above, above, and above the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being below, below, and below the second feature includes the first feature being directly below and obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0029] like Figure 2 and Figure 3 As shown, a reaction chamber includes an antenna 1 and a diameter of Φ 1 The sample stage 2 is arranged in the reaction chamber, the end of the antenna 1 is arranged in the reaction chamber and is located directly above the sample stage 2, and the end of the antenna 1 is provided with a diameter of Φ 2 The first cylindrical body 11 has a truncated cone 12 on its lower bottom surface, and the upper bottom surface diameter and the lower bottom surface diameter of the truncated cone 12 are Φ 3 and Φ 4 , the Φ 3 >Φ 4 , that is, the upper bottom surface diameter of the truncated cone 12 is larger than the lower bottom surface diameter; in order to make the plasma ball flat and thus increase the coating area, the lower bottom surface of the truncated cone 12 is provided with a diameter of Φ 5 In addition, the second cylinder 13 can also broaden the frequency bandwidth of the electromagnetic wave; in some embodiments, in order to facilitate manufacturing, the first cylinder 11, the frustum 12 and the second cylinder 13 can be integrally formed.

[0030] Furthermore, the first cylinder 11, the truncated table 12, the second cylinder 13 and the sample table 2 are coaxial, and the Φ 2 =Φ 3 , the Φ 4 >Φ 5 >Φ 1; Specifically, in order to make the plasma evenly distributed, thereby improving the deposition efficiency and quality of the diamond film, the lower surface of the second cylinder 13 is parallel to the upper surface of the sample stage 2, the first cylinder 11, the frustum 12, and the second cylinder 13 are all coaxial with the sample stage 2, and the diameter of the first cylinder 11 is equal to the diameter of the upper bottom surface of the frustum 12; in order to make the plasma ball flatter and broaden the bandwidth of the electromagnetic wave, the diameter of the lower bottom surface of the frustum 12 is greater than the diameter of the second cylinder 13; in order to make the plasma ball flatter and thereby increase the coating area, and to make the plasma distribution more even and thereby more conducive to improving the deposition efficiency and quality of the diamond film, the diameter of the second cylinder 13 is greater than the diameter of the sample stage 2.

[0031] Furthermore, the Φ 5 / Φ 1 =K 1 , the K 1 ∈1, 1.3]; Experiments and simulations show that when the ratio of the diameter of the second cylinder 13 to the diameter of the sample stage 2 is K 1 ∈(1, 1.3], is a preferred value range for making the plasma ball flatter and the plasma distribution more uniform; in some embodiments, the K 1 =1.05, or 1.10, or 1.15, or 1.2, or 1.25, or 1.3.

[0032] Furthermore, in order to further flatten the plasma ball and thus further increase the coating area, the lower bottom surface of the second cylinder 13 is provided with a diameter of Φ 6 In addition, the third cylinder 14 can further broaden the frequency bandwidth of the electromagnetic wave; in some embodiments, in order to facilitate manufacturing, the first cylinder 11, the frustum 12, the second cylinder 13 and the third cylinder 14 can be integrally formed.

[0033] Furthermore, the first cylinder 11, the truncated table 12, the second cylinder 13, and the third cylinder 14 are coaxial with the sample table 2. 5 >Φ 6 >Φ 1; Specifically, in order to further make the plasma evenly distributed, thereby further improving the deposition efficiency and quality of the diamond film, the lower surface of the third cylinder 14 is parallel to the upper surface of the sample stage 2, and the first cylinder 11, the frustum 12, the second cylinder 13, and the third cylinder 14 are all coaxial with the sample stage 2; in order to make the plasma ball flatter and further broaden the bandwidth of the electromagnetic wave, the diameter of the second cylinder 13 is greater than the diameter of the third cylinder 14; in order to make the plasma ball flatter and thereby increase the coating area, and to make the plasma distribution more evenly distributed, thereby further improving the deposition efficiency and quality of the diamond film, the diameter of the third cylinder 14 is greater than the diameter of the sample stage 2.

[0034] Furthermore, the Φ 5 / Φ 6 =K 2 , the Φ 6 / Φ 1 =K 3 , the K 2 ∈1,1.4], the K 3 ∈1, 1.3]; Experiments and simulations show that when the ratio of the diameter of the second cylinder 13 to the diameter of the third cylinder 14 is K 2 ∈(1, 1.4], in order to make the plasma ball flatter and further broaden the preferred numerical range of the electromagnetic wave frequency bandwidth, in some embodiments, the K 2 =1.1, or 1.2, or 1.3, or 1.4; and when the ratio of the diameter of the third cylinder 14 to the diameter of the sample stage 2 is K 3 ∈(1, 1.3], in order to make the plasma ball flatter and the plasma distribution more uniform, in some embodiments, the K 3 =1.05, or 1.10, or 1.15, or 1.2, or 1.25, or 1.3.

[0035] Furthermore, a chamfer 3 is provided between the bottom surface and the side wall of the reaction chamber, and the diameter of the upper chamber and the diameter of the lower chamber of the reaction chamber are Φ 7 and Φ 8 , the Φ 7 <Φ 8 Specifically, in order to make the field intensity distribution more concentrated, the reaction chamber is cylindrical, and a chamfer 3 is provided between the bottom surface and the side wall of the reaction chamber. The reaction chamber, the sample stage 2, and the second cylinder 13 are all coaxial with the third cylinder 14, and the diameter of the upper cavity of the reaction chamber is smaller than the diameter of the lower cavity.

[0036] Furthermore, in order to better constrain and concentrate the plasma field strength, thereby being more conducive to the formation of diamond film and improving the deposition efficiency and quality of the diamond film, a ring 4 is provided on the bottom surface of the reaction chamber, and the sample stage 2 is provided in the ring 4, and the sample stage 2 is spaced apart from the ring 4.

[0037] Furthermore, in order to make the plasma evenly distributed, thereby further improving the deposition efficiency and quality of the diamond film, the upper surface of the sample stage 2 is lower than the upper surface of the ring 4 , and the sample stage 2 and the ring 4 are coaxial with the second cylinder 13 .

[0038] An MPCVD device comprises the reaction chamber.

[0039] The simulation proves that the reaction chamber of the utility model can make the plasma ball flatter (see Figure 4 ), which makes it suitable for depositing large-area diamond films.

[0040] The above description is only the preferred implementation of the utility model, and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A reaction chamber, comprising an antenna (1) and a sample stage (2) with a diameter of Φ1, characterized in that: A first cylinder (11) with a diameter of Φ2 is arranged at the end of the antenna (1), a truncated cone (12) is arranged on the lower bottom surface of the first cylinder (11), the upper bottom surface diameter and the lower bottom surface diameter of the truncated cone (12) are Φ3 and Φ4 respectively, and a second cylinder (13) with a diameter of Φ5 is arranged on the lower bottom surface of the truncated cone (12).

2. The reaction chamber according to claim 1, characterized in that: The first cylinder (11), the truncated table (12), the second cylinder (13) and the sample table (2) are coaxial, Φ2=Φ3, and Φ4>Φ5>Φ1.

3. The reaction chamber according to claim 2, characterized in that: The Φ5 / Φ1=K1, the K1∈(1,1.3].

4. The reaction chamber according to any one of claims 1 to 3, characterized in that: A third cylinder (14) having a diameter of Φ6 is provided on the lower bottom surface of the second cylinder (13).

5. The reaction chamber according to claim 4, characterized in that: The first cylinder (11), the frustum (12), the second cylinder (13), and the third cylinder (14) are coaxial with the sample stage (2), and Φ5>Φ6>Φ1.

6. The reaction chamber according to claim 5, characterized in that: The Φ5 / Φ6=K2, the Φ6 / Φ1=K3, the K2∈(1, 1.4], the K3∈(1, 1.3].

7. The reaction chamber according to claim 5, characterized in that: A chamfer (3) is provided between the bottom surface and the side wall of the reaction chamber, and the diameter of the upper chamber and the diameter of the lower chamber of the reaction chamber are Φ7 and Φ8 respectively, wherein Φ7<Φ8.

8. The reaction chamber according to claim 7, characterized in that: A circular ring (4) is arranged on the bottom surface of the reaction chamber, and the sample stage (2) is arranged in the circular ring (4).

9. The reaction chamber according to claim 8, characterized in that: The upper surface of the sample stage (2) is lower than the upper surface of the circular ring (4), and the sample stage (2), the circular ring (4) and the second cylinder (13) are coaxial.

10. An MPCVD device, characterized in that: A reaction chamber comprising any one of claims 1 to 9.

Images