Silicon carbide epitaxial wafer growth furnace

Abstract

The utility model relates to the technical field of silicon carbide epitaxial wafer growth, and particularly discloses a silicon carbide epitaxial wafer growth furnace which comprises a furnace body, a mounting rod and trays, the mounting rod is arranged in the furnace body in the height direction of the furnace body, the trays are arranged on the mounting rod, and the trays are arranged at intervals in the axis direction of the mounting rod; the tray comprises a mounting seat, two tray bodies and a fixing assembly, the mounting seat is arranged on the mounting rod, the two tray bodies are symmetrically arranged on the two sides of the mounting seat, placing grooves used for placing substrates are formed in the tray bodies, the tray bodies are rotationally arranged on the mounting seat, the rotating axis of the tray bodies is parallel to the axis of the mounting rod, and the fixing assembly is arranged on the mounting seat. And the fixing assembly is arranged between the two tray bodies and used for fixedly connecting the two tray bodies in the folded state. According to the invention, more graphite trays can be arranged in a relatively compact space.

Description

Technical Field

[0001] The present application relates to the technical field of silicon carbide epitaxial wafer growth, and in particular to a silicon carbide epitaxial wafer growth furnace. Background Art

[0002] Silicon carbide substrates and epitaxial wafers are two common substrates in semiconductor materials. The difference between the two is that silicon carbide substrates are usually used to manufacture transistor devices such as diodes, while epitaxial wafers are used to manufacture devices such as integrated circuits. Silicon carbide epitaxial wafers refer to silicon carbide wafers on which a single crystal thin film (epitaxial layer) with certain requirements and the same crystal structure as the substrate is grown on a silicon carbide substrate.

[0003] In the related art, a Chinese patent with publication number CN111088526A discloses a multi-wafer loaded silicon carbide epitaxial growth device, the technical key points of which are: including a base, a reaction chamber arranged on the base, an air intake mechanism arranged on the left side of the reaction chamber, an air outlet mechanism arranged on the right side of the reaction chamber, a heating tube arranged at the bottom of the reaction chamber, a tray rack rotatably arranged in the middle of the reaction chamber, and a driving mechanism for driving the tray rack to rotate; the tray rack includes a vertical rotating rod, and a plurality of graphite trays horizontally connected in series on the rotating rod; a plurality of positioning grooves for placing the substrate are evenly arranged on the upper surface of each graphite tray.

[0004] In the above device, the substrate is placed in the groove on the surface of the graphite tray to grow the silicon carbide epitaxial wafer; the distance between two adjacent graphite trays on the tray rack needs to be set larger so that the operator's hand can reach between the two connected graphite trays to take and place the substrate; therefore, when the number of graphite trays on the tray rack is large, the space occupied by the entire device will be larger, which is not conducive to reducing energy consumption during the heating process of the inside of the device. Utility Model Content

[0005] In order to arrange more graphite trays in a relatively compact space without affecting the placement and removal of substrates, the present application provides a silicon carbide epitaxial wafer growth furnace.

[0006] The present application provides a silicon carbide epitaxial wafer growth furnace adopts the following technical solution:

[0007] A silicon carbide epitaxial wafer growth furnace comprises a furnace body, a mounting rod and a tray, wherein the mounting rod is arranged in the furnace body along the height direction of the furnace body, the tray is arranged on the mounting rod, a plurality of trays are provided and are arranged at intervals along the axial direction of the mounting rod, the tray comprises a mounting seat, a disk body and a fixing assembly, the mounting seat is arranged on the mounting rod, the disk body is provided with two and symmetrically arranged on both sides of the mounting seat, a placement groove for placing a substrate is opened on the disk body, the disk body is rotatably arranged on the mounting seat, the rotation axis of the disk body is parallel to the axis of the mounting rod, so that the two disk bodies can be closed or opened, and the fixing assembly is arranged between the two disk bodies, and is used to fix the two disk bodies in a closed state to be connected.

[0008] By adopting the above technical solution, the two trays are rotatably arranged, so that the two trays can be closed or opened with each other. Therefore, after the distance between two adjacent trays is reduced, the two trays can be opened to carry out the placement and take-out of the substrate. Therefore, more trays can be arranged in a compact space, which ensures the production efficiency of silicon carbide epitaxial wafers while helping to reduce energy consumption.

[0009] Optionally, the disk is arranged in a semicircular shape, and the rotation axis of the disk is located at a corner of the disk.

[0010] By adopting the above technical solution, it is convenient to rotate the disk body outward, so as to take out the silicon carbide epitaxial wafer in the placement groove on the top of the disk body.

[0011] Optionally, the fixing assembly includes an insertion rod and a first elastic member, the insertion rod is slidably inserted into one of the disk bodies, the first elastic member is connected between the insertion rod and the disk body, and the other disk body is provided with a socket for inserting the end of the insertion rod. When the two disk bodies are closed, the first elastic member enables the end of the insertion rod to be inserted into the socket.

[0012] By adopting the above technical solution, after the two disk bodies are closed, the two disk bodies can be fixedly connected together by inserting the insertion rod into the insertion hole, so the fixing process is simple; the provision of the first elastic member can reduce the possibility of accidental falling off of the insertion rod, which helps to ensure the fixing effect.

[0013] Optionally, the mounting seat is plugged onto the mounting rod along the axial direction of the mounting rod, and a locking member for fixing the mounting seat is provided on the mounting seat.

[0014] By adopting the above technical solution, the position of the mounting seat is adjustable, so the position of the tray is adjustable, and the number of trays and the distance between two adjacent trays can be set according to needs, which has stronger adaptability.

[0015] Optionally, the locking member is a locking bolt, and the mounting rod is provided with a plurality of threaded holes along its own axial direction for the locking bolts to be screwed into.

[0016] By adopting the above technical solution, after the mounting seat is slid to the desired position, the locking bolt and the corresponding threaded hole are aligned, and then the end of the locking bolt is screwed into the corresponding threaded hole, thereby limiting the sliding of the mounting seat and fixing the mounting seat.

[0017] Optionally, a material unloading mechanism is provided on the disk body, and the material unloading mechanism includes a connecting rod, a support rod, a support plate and a locking assembly, the connecting rod is provided at the bottom of the disk body, the support rod is fixedly connected to the connecting rod, one end of the support rod away from the connecting rod is slidably penetrated on the disk body, the end of the support rod passes through the bottom wall of the placement groove, the support plate is located in the placement groove, the support plate and the support rod are fixedly connected, the support plate is used to place the substrate, the locking assembly is provided between the connecting rod and the disk body, and the locking assembly is used to fix the connecting rod on the disk body.

[0018] By adopting the above technical solution, after the two disks are rotated to the side away from each other, the connecting rod can be moved upward, and the connecting rod drives the support rod and the support plate to move upward. The silicon carbide epitaxial wafer placed on the top surface of the support plate moves upward, so that the silicon carbide epitaxial wafer is separated from the placement groove, thereby facilitating the rapid removal of the silicon carbide epitaxial wafer.

[0019] Optionally, the locking assembly includes a first magnetic component and a second magnetic component, the first magnetic component is arranged on the connecting rod, the second magnetic component is fixedly connected to the bottom wall of the disk body, and the magnetic poles of the first magnetic component and the second magnetic component on a side close to each other are in opposite directions.

[0020] By adopting the above technical solution, after the connecting rod is moved upward, the first magnetic member and the second magnetic member can be attracted to each other, thereby fixing the connecting rod, making it easier to remove the silicon carbide epitaxial wafer on the top surface of the support plate.

[0021] Optionally, a second elastic member is provided between the bottom wall of the disk body and the connecting rod, and the second elastic member causes the connecting rod to have a tendency to slide toward a side away from the disk body.

[0022] By adopting the above technical solution, when the connecting rod is moved upward, the elastic force of the second elastic member on the connecting rod and the suction force of the second magnetic member on the connecting rod are in opposite directions. Therefore, the second elastic member can play a certain buffering role, thereby preventing the connecting rod from suddenly moving upward due to the suction force after moving up a certain distance, causing the silicon carbide epitaxial wafer on the support plate to fall off.

[0023] Optionally, a baffle is fixedly connected to the top wall of the support plate, and a plurality of baffles are provided and a spacer ring is arranged on the peripheral side of the support plate.

[0024] By adopting the above technical solution, the baffle can limit the silicon carbide epitaxial wafer placed on the top surface of the support plate, thereby further reducing the possibility of the silicon carbide epitaxial wafer falling when the connecting rod is moved upward.

[0025] Optionally, the support plate is a copper sheet.

[0026] By adopting the above technical solution, the heat conduction effect of the support plate can be enhanced, which helps to ensure the heating effect of the silicon carbide substrate, thereby accelerating the growth of the epitaxial wafer.

[0027] In summary, the present application includes at least one of the following beneficial technical effects:

[0028] 1. The tray is set to a detachable structure, so the distance between two adjacent trays can be shortened, thereby reducing the internal space of the furnace body and helping to reduce energy consumption.

[0029] 2. After rotating the two disks away from each other, the silicon carbide epitaxial wafer in the placement groove can be easily taken out.

[0030] 3. Move the connecting rod upward to move the silicon carbide epitaxial wafer on the support plate to the outside of the placement groove, thereby making the removal process of the epitaxial wafer more convenient. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a cross-sectional view of an embodiment of the present application for showing the internal structure;

[0032] Figure 2 It is a schematic diagram of the structure of a tray for displaying an embodiment of the present application;

[0033] Figure 3 This is a schematic diagram of the structure after the two disks are opened in the embodiment of the present application;

[0034] Figure 4 is a cross-sectional view of an embodiment of the present application along the axis direction of the mounting rod;

[0035] Figure 5 It is a structural schematic diagram used to demonstrate the unloading mechanism in the embodiment of the present application.

[0036] Figure numerals: 1. furnace body; 2. mounting rod; 21. threaded hole; 3. tray; 31. mounting seat; 311. connecting tube; 3111. mounting hole; 312. connecting plate; 32. disk body; 321. placement groove; 33. fixing assembly; 331. insertion rod; 332. first elastic member; 4. locking bolt; 5. first protrusion; 51. through hole; 6. second protrusion; 61. insertion hole; 7. unloading mechanism; 71. connecting rod; 72. support rod; 73. support plate; 74. locking assembly; 741. first magnetic member; 742. second magnetic member; 8. second elastic member; 9. baffle; 10. heating tube; 11. blower. DETAILED DESCRIPTION

[0037] The following is combined with Figure 1-5 This application is described in further detail.

[0038] The present application discloses a silicon carbide epitaxial wafer growth furnace. Figure 1 The silicon carbide epitaxial wafer growth furnace includes a furnace body 1, a mounting rod 2 and a tray 3. The furnace body 1 is vertically arranged in the height direction, and a motor is fixedly connected to the bottom of the furnace body 1, and the output shaft of the motor is vertically upward; the mounting rod 2 is arranged in the furnace body 1 along the height direction of the furnace body 1, and the mounting rod 2 and the output shaft of the motor are coaxially fixedly connected. The tray 3 is arranged on the mounting rod 2, and a plurality of trays 3 are arranged and evenly spaced along the axial direction of the mounting rod 2. A placement groove 321 for placing a silicon carbide substrate is provided on the top surface of the tray 3.

[0039] A heating tube 10 is also provided in the furnace body 1. The heating tube 10 can heat up quickly after being powered on, thereby heating the furnace body 1. Blowers 11 are provided on both sides of the furnace body 1. The air inlet of one blower 11 is located outside the furnace body 1, and the air outlet is located inside the furnace body 1, for passing the reaction gas into the furnace body 1; the air inlet of the other blower 11 is located inside the furnace body 1, and the air outlet is located outside the furnace body 1, for exhausting air; under the action of the two blowers 11, the reaction gas can flow through the substrate first, and after reacting with the substrate, the gas is discharged; at the same time, the motor drives the mounting rod 2 to rotate, so that the tray 3 rotates, and the substrate on the tray 3 can be more fully in contact with the reaction gas, thereby improving the reaction rate.

[0040] Reference Figure 2 and Figure 3 The tray 3 includes a mounting seat 31, a tray body 32 and a fixing assembly 33. The mounting seat 31 includes a connecting tube 311 and a connecting plate 312. The connecting tube 311 is sleeved on the outer side of the mounting rod 2, and the inner diameter of the connecting tube 311 is the same as the outer diameter of the mounting rod 2; the connecting plate 312 is fixedly connected to the outer wall of the connecting tube 311, and the length direction of the connecting plate 312 is perpendicular to the axis of the connecting tube 311. The tray body 32 is semicircular, and there are two tray bodies 32, which are symmetrically distributed on both sides of the mounting seat 31; the placement groove 321 is a circular groove, which is opened on the top surface of the tray body 32, and there are multiple placement grooves 321. The tray body 32 is hinged to one end of the connecting plate 312 away from the connecting tube 311, and the hinge axis of the tray body 32 is vertically arranged; the hinge axis of the tray body 32 is located at a corner of the tray body 32. Therefore, the two tray bodies 32 can be closed when they rotate toward the side close to each other, and can be opened when they rotate toward the side away from each other.

[0041] The fixing assembly 33 includes an insert rod 331 and a first elastic member 332. A first protrusion 5 is fixedly connected to the angular position of one end of one of the disk bodies 32 away from its own hinge axis, and a through hole 51 with a vertical axis is provided on the first protrusion 5; the insert rod 331 is slidably provided in the through hole 51 along the vertical direction; the first elastic member 332 is a spring, and the first elastic member 332 is fixedly connected between the insert rod 331 and the first protrusion 5. A second protrusion 6 is fixedly connected to the angular position of the end of the other disk body 32 away from its own hinge axis, and a plug hole 61 with a vertical axis is provided on the second protrusion 6; when the two disk bodies 32 are closed together, the plug hole 61 and the through hole 51 are coaxially arranged, and the first elastic member 332 allows the end of the insert rod 331 to be inserted into the plug hole 61, which can limit the rotation between the two disk bodies 32, thereby fixing the two disk bodies 32 in connection.

[0042] Reference Figure 4 Furthermore, the connecting tube 311 is slidably sleeved on the outer wall of the mounting rod 2 along the axial direction of the mounting rod 2, and a locking piece is provided on the connecting tube 311. The locking piece is a locking bolt 4, and a mounting hole 3111 for the locking bolt 4 to penetrate is provided on the outer wall of the connecting tube 311. A plurality of threaded holes 21 are evenly spaced along the axial direction of the mounting rod 2. After the connecting tube 311 is slid and the mounting hole 3111 and the corresponding threaded hole 21 are coaxial, the end of the locking bolt 4 is screwed into the threaded hole 21, and the locking bolt 4 and the threaded hole 21 are threadedly connected. The head of the locking bolt 4 presses the connecting tube 311 tightly, and the connecting tube 311 can be locked and fixed on the mounting rod 2.

[0043] In order to make the process of removing the epitaxial wafer easier, refer to Figure 4 and Figure 5 , each tray body 32 is provided with a material unloading mechanism 7, which includes a connecting rod 71, a supporting rod 72, a supporting plate 73 and a locking assembly 74. The connecting rod 71 is arranged at intervals below the bottom wall of the tray body 32; there are multiple supporting rods 72, the number of which is the same as the number of placement slots 321 on each tray body 32, and each supporting rod 72 corresponds to a placement slot 321. The supporting rod 72 is arranged vertically, the bottom end of the supporting rod 72 is fixedly connected to the connecting rod 71, and the top end of the supporting rod 72 passes through the bottom wall of the corresponding placement slot 321. There are multiple supporting plates 73, the number of which is the same as the number of supporting rods 72, each supporting plate 73 corresponds to a supporting rod 72, and the supporting plate 73 is fixedly connected to the top end of the supporting rod 72; the supporting plate 73 is located in the placement slot 321, the supporting plate 73 is a circular plate, the plate surface of the supporting plate 73 is arranged horizontally, and the top surface of the supporting plate 73 is used to place the substrate. The support plate 73 is a copper sheet, so it has a good heat conduction effect and helps to accelerate the heating rate of the substrate.

[0044] When unloading, first rotate the two disks 32 to the side away from each other, then move the connecting rod 71 upward, the connecting rod 71 drives the support rod 72 and the support plate 73 to move upward, and the support plate 73 drives the substrate upward, so that the substrate is moved out of the placement groove 321, and then the substrate can be removed from the support plate 73 more conveniently.

[0045] Reference Figure 5 The locking assembly 74 includes a first magnetic member 741 and a second magnetic member 742. The first magnetic member 741 is fixedly connected to the connecting rod 71, and the second magnetic member 742 is fixedly connected to the bottom wall of the disk body 32. The first magnetic member 741 and the second magnetic member 742 are both magnets, and the magnetic poles of the first magnetic member 741 and the second magnetic member 742 on the side close to each other are in opposite directions. Therefore, when the connecting rod 71 is moved upward, the first magnetic member 741 and the second magnetic member 742 can be attracted together, thereby fixing the connecting rod 71.

[0046] Furthermore, a second elastic member 8 is connected between the bottom wall of the disk body 32 and the connecting rod 71. The second elastic member 8 is a spring. When the support plate 73 and the bottom wall of the placement groove 321 are against each other, the second elastic member 8 is at its original length. When the connecting rod 71 is moved upward, the second elastic member 8 is compressed, thereby applying an elastic force to the connecting rod 71; when the first magnetic member 741 and the second magnetic member 742 are in contact with each other, the attraction force between the first magnetic member 741 and the second magnetic member 742 is greater than the elastic force generated by the elastic member on the connecting rod 71, so that the first magnetic member 741 and the second magnetic member 742 are attracted together; the second elastic member 8 can play a buffering role in the upward movement of the connecting rod 71.

[0047] The edge of the top wall of the support plate 73 is fixedly connected with a baffle 9, and two baffles 9 are provided and symmetrically arranged on both sides of the support plate 73. The baffles 9 are arc-shaped pieces. Therefore, after the substrate is placed on the top surface of the support plate 73, the baffles 9 can protect the substrate and prevent the substrate from falling when the support plate 73 moves upward.

[0048] The implementation principle of a silicon carbide epitaxial wafer growth furnace in the embodiment of the present application is as follows: under normal conditions, the substrate is placed in the placement groove 321, and the substrate is located on the top surface of the support plate 73; the motor drives the mounting rod 2 to rotate, and the mounting rod 2 drives the tray 3 to rotate, so that the substrate on the tray 3 rotates; the heating tube 10 heats the furnace body 1 after being energized, and at the same time, the reaction gas is introduced into the furnace body 1, so that the reaction gas and the substrate react to form an epitaxial wafer on the top surface of the substrate. When the epitaxial wafer growth is completed, the motor stops working, so that the tray 3 stops rotating. Then, the rod 331 is pulled out from the insertion hole 61, and then the two disks 32 are rotated to the side away from each other, so that the two disks 32 are opened; then the connecting rod 71 is moved upward, and the connecting rod 71 drives the epitaxial wafer upward through the support rod 72 and the support plate 73, until the first magnetic member 741 and the second magnetic member 742 are attracted together to fix the connecting rod 71; at this time, the epitaxial wafer is located outside the placement groove 321, and then the epitaxial wafer can be easily taken out, and a new substrate can be re-placed on the support plate 73. Then the two disks 32 are rotated to the closed state, and locked by the cooperation of the rod 331 and the insertion hole 61.

[0049] The above are optional embodiments of the present application, and are not intended to limit the protection scope of the present application. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A silicon carbide epitaxial wafer growth furnace, characterized in that: The invention comprises a furnace body (1), a mounting rod (2) and a tray (3), wherein the mounting rod (2) is arranged inside the furnace body (1) along the height direction of the furnace body (1), the tray (3) is arranged on the mounting rod (2), a plurality of trays (3) are arranged and are arranged at intervals along the axis direction of the mounting rod (2), the tray (3) comprises a mounting seat (31), a tray body (32) and a fixing assembly (33), the mounting seat (31) is arranged on the mounting rod (2), two tray bodies (32) are arranged and are symmetrically arranged on both sides of the mounting seat (31), a placement groove (321) for placing a substrate is opened on the tray body (32), the tray body (32) is rotatably arranged on the mounting seat (31), the rotation axis of the tray body (32) is parallel to the axis of the mounting rod (2), so that the two tray bodies (32) can be closed or opened, and the fixing assembly (33) is arranged between the two tray bodies (32) and is used to fix and connect the two tray bodies (32) in a closed state.

2. A silicon carbide epitaxial wafer growth furnace according to claim 1, characterized in that: The disk body (32) is arranged in a semicircular shape, and the rotation axis of the disk body (32) is located at a corner of the disk body (32).

3. The silicon carbide epitaxial wafer growth furnace according to claim 1, characterized in that: The fixing assembly (33) comprises an insertion rod (331) and a first elastic member (332), wherein the insertion rod (331) is slidably inserted into one of the disk bodies (32), the first elastic member (332) is connected between the insertion rod (331) and the disk body (32), and the other disk body (32) is provided with an insertion hole (61) for inserting the end of the insertion rod (331), and when the two disk bodies (32) are closed, the first elastic member (332) enables the end of the insertion rod (331) to be inserted into the insertion hole (61).

4. The silicon carbide epitaxial wafer growth furnace according to claim 1, characterized in that: The mounting seat (31) is plugged onto the mounting rod (2) along the axial direction of the mounting rod (2), and a locking piece for fixing the mounting seat (31) is provided on the mounting seat (31).

5. The silicon carbide epitaxial wafer growth furnace according to claim 4, characterized in that: The locking member is a locking bolt (4), and the mounting rod (2) is provided with a plurality of threaded holes (21) along its own axial direction for the locking bolt (4) to be screwed into.

6. The silicon carbide epitaxial wafer growth furnace according to claim 1, characterized in that: The disk body (32) is provided with a material unloading mechanism (7), the material unloading mechanism (7) comprising a connecting rod (71), a supporting rod (72), a supporting plate (73) and a locking assembly (74); the connecting rod (71) is provided at the bottom of the disk body (32); the supporting rod (72) is fixedly connected to the connecting rod (71); one end of the supporting rod (72) away from the connecting rod (71) is slidably penetrated on the disk body (32); the end of the supporting rod (72) penetrates through the bottom wall of the placement groove (321); the supporting plate (73) is located in the placement groove (321); the supporting plate (73) and the supporting rod (72) are fixedly connected; the supporting plate (73) is used to place a substrate; the locking assembly (74) is provided between the connecting rod (71) and the disk body (32); the locking assembly (74) is used to fix the connecting rod (71) on the disk body (32).

7. The silicon carbide epitaxial wafer growth furnace according to claim 6, characterized in that: The locking assembly (74) comprises a first magnetic component (741) and a second magnetic component (742), wherein the first magnetic component (741) is arranged on the connecting rod (71), and the second magnetic component (742) is fixedly connected to the bottom wall of the disk body (32), and the magnetic poles of the first magnetic component (741) and the second magnetic component (742) on the side close to each other have opposite directions.

8. The silicon carbide epitaxial wafer growth furnace according to claim 7, characterized in that: A second elastic member (8) is provided between the bottom wall of the disk body (32) and the connecting rod (71), and the second elastic member (8) causes the connecting rod (71) to have a tendency to slide towards a side away from the disk body (32).

9. The silicon carbide epitaxial wafer growth furnace according to claim 6, characterized in that: A baffle (9) is fixedly connected to the top wall of the support plate (73), and a plurality of baffles (9) are provided, and a spacer ring is provided on the peripheral side of the support plate (73).

10. The silicon carbide epitaxial wafer growth furnace according to claim 6, characterized in that: The support plate (73) is a copper sheet.

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