Defect detection device for silicon carbide wafer

Abstract

The embodiment of the utility model provides a silicon carbide wafer defect detection device, and relates to the technical field of silicon carbide wafer defect detection. The defect detection device comprises a plurality of rotary adsorption platforms which are coaxially arranged and sequentially arranged in a sleeving mode, the rotary adsorption platforms are used for adsorbing the to-be-detected wafer and driving the to-be-detected wafer to rotate, and when silicon carbide wafers of different sizes are detected, an original fixing ring does not need to be detached and replaced with fixing rings of different sizes, so that the detection efficiency is improved. And the silicon carbide crystal only needs to be placed on the rotary adsorption platform with the corresponding size. And the detection efficiency of the silicon carbide wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide wafer defect detection, and more specifically, to a defect detection device for silicon carbide wafers. Background Art

[0002] As an emerging core material of the first generation of semiconductors, silicon carbide (SiC) has excellent properties such as a wide bandgap, a high critical breakdown electric field strength, a high electron mobility, and good radiation resistance and chemical stability. This makes it an important substrate wafer material with wide applications and shows good application prospects in fields such as aviation devices, new energy vehicles, rail transit, and household appliances.

[0003] After research by the inventor, it is found that when detecting defects in existing silicon carbide wafers, the wafers need to be adsorbed and fixed on a rotating adsorption platform and then rotated. The sizes of the rotating adsorption platforms corresponding to wafers of different sizes are different. There is only a rotating adsorption platform with a fixed size in the existing detection device. Therefore, when detecting wafers of different sizes, different-sized fixing rings need to be replaced to detect the wafers, resulting in low efficiency. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a defect detection device for silicon carbide wafers, which can improve the detection efficiency of silicon carbide wafers.

[0005] The embodiments of the utility model are implemented as follows:

[0006] In a first aspect, the utility model provides a defect detection device for silicon carbide wafers, including:

[0007] A plurality of rotating adsorption platforms coaxially arranged and sleeved in sequence. The rotating adsorption platforms are used to adsorb the wafers to be detected and drive the wafers to rotate. The plurality of rotating adsorption platforms are all in a circular ring shape.

[0008] In an optional embodiment, the number of rotating adsorption platforms is two, namely a second rotating adsorption platform and a first rotating adsorption platform. The radial dimension of the second rotating adsorption platform is smaller than that of the first rotating adsorption platform. The first rotating adsorption platform can move relative to the second rotating adsorption platform along its own axis direction.

[0009] In an optional embodiment, the second rotating adsorption platform can move relative to the first rotating adsorption platform along its own axis direction.

[0010] In an alternative embodiment, the defect detection device further includes a connecting platform, a first lifting device and a rotating mechanism. The first lifting device, the first rotating adsorption platform and the second rotating adsorption platform are all arranged on the connecting platform. The first lifting device is connected to the first rotating adsorption platform and is used to drive the first rotating adsorption platform to move along its own axis direction. The first lifting device is arranged on the connecting platform. The rotating mechanism is connected to the connecting platform and is used to drive the second rotating adsorption platform and the first rotating adsorption platform to rotate around their own axes.

[0011] In an alternative embodiment, the defect detection device further includes a first lifting device and a first rotating device. The first lifting device is connected to the first rotating adsorption platform and is used to drive the first rotating adsorption platform to move along its own axis direction. The first rotating device is connected to the first rotating adsorption platform and is used to drive the first rotating adsorption platform to rotate around its own axis.

[0012] In an alternative embodiment, the defect detection device further includes a second lifting device and a second rotating device. The second lifting device is connected to the second rotating adsorption platform and is used to drive the second rotating adsorption platform to move along its own axis direction. The second rotating device is connected to the second rotating adsorption platform and is used to drive the second rotating adsorption platform to rotate around its own axis.

[0013] In an alternative embodiment, the second rotating adsorption platform is provided with a plurality of second vacuum holes, and the plurality of second vacuum holes are evenly spaced along the circumferential direction of the second rotating adsorption platform. The second vacuum holes are used to connect with a vacuum generator.

[0014] In an alternative embodiment, the first rotating adsorption platform is provided with a plurality of first vacuum holes, and the plurality of first vacuum holes are evenly spaced along the circumferential direction of the first rotating adsorption platform. The first vacuum holes are used to connect with a vacuum generator.

[0015] In an alternative embodiment, there is a preset gap between the inner peripheral wall of the first rotating adsorption platform and the outer peripheral wall of the second rotating adsorption platform.

[0016] In an alternative embodiment, the driving end of the first lifting device is connected to one end of the first rotating adsorption platform close to the connecting platform. The dimension of the first rotating adsorption platform in the axial direction is smaller than the dimension of the second rotating adsorption platform in the axial direction. The first lifting device can drive one end of the first rotating adsorption platform away from the connecting platform to be higher or lower than the height of one end of the second rotating adsorption platform away from the connecting platform in the axial direction.

[0017] In an alternative embodiment, the defect detection device further includes a detection box body and an optical sensor arranged in the detection box body. A plurality of coaxial annular rotating adsorption platforms are located in the detection box body. The optical sensor is used to detect the surface defects of the silicon carbide wafers to be detected on the rotating adsorption platforms.

[0018] In an alternative embodiment, the defect detection device further includes a surface analysis sensor for analyzing the surface chemical composition of the silicon carbide wafer to be detected on the rotary adsorption platform.

[0019] The beneficial effects of the embodiments of the present utility model are as follows: A defect detection device for silicon carbide wafers provided by the embodiments of the present utility model includes a plurality of coaxially arranged rotary adsorption platforms for adsorbing wafers to be detected and driving the wafers to be detected to rotate. When detecting silicon carbide wafers of different sizes, it is not necessary to disassemble the original fixing ring and replace it with a fixing ring of a different size. It is only necessary to place the silicon carbide crystal on the rotary adsorption platform of the corresponding size, thereby improving the detection efficiency of silicon carbide wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present utility model and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 It is a top view of the first rotary adsorption platform and the second rotary adsorption platform provided by the embodiments of the present utility model;

[0022] Figure 2 It is an assembly schematic diagram of the first rotary adsorption platform, the second rotary adsorption platform, the first lifting device, the connecting platform and the rotating mechanism provided by the embodiments of the present utility model.

[0023] Reference numerals: 1 - defect detection device; 100 - rotary adsorption platform; 110 - first rotary adsorption platform; 111 - first vacuum hole; 120 - second rotary adsorption platform; 121 - second vacuum hole; 300 - first lifting device; 400 - connecting platform; 500 - rotating mechanism. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0024] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are some but not all of the embodiments of the present utility model. The components of the embodiments of the present utility model described and illustrated in the drawings here can be arranged and designed in various different configurations.

[0025] Accordingly, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0026] It should be noted that like reference numerals and letters denote like items in the following drawings. Therefore, once an item is defined in one drawing, it does not require further definition and explanation in subsequent drawings.

[0027] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present invention is customarily placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. In addition, the terms "second", "first", "first", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0028] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0029] In the description of the present invention, it should also be noted that unless otherwise clearly defined and limited, the terms "set", "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0030] The following details the specific structure of a defect detection device for a silicon carbide wafer provided by an embodiment of the present invention in conjunction with the patent drawings and the corresponding technical effects brought thereby.

[0031] Please refer to Figure 1 - Figure 2, a defect detection device 1 for a silicon carbide wafer provided by an embodiment of the present utility model includes a plurality of rotating adsorption platforms coaxially arranged and sleeved in sequence. It can be understood that the radial dimensions of the plurality of rotating adsorption platforms 100 are different, and the large-sized rotating adsorption platform 100 is sleeved on the small-sized rotating adsorption platform 100. The rotating adsorption platform 100 is used to adsorb the wafer to be tested and drive the wafer to be tested to rotate, and the plurality of rotating adsorption platforms 100 are all annular. It can be understood that during the process of adsorbing the silicon carbide wafer on the rotating adsorption platform 100 and driving the silicon carbide wafer to rotate, an optical or electronic detector for detecting the silicon carbide wafer may be provided to reduce the occlusion of the detection of the silicon carbide wafer.

[0032] It can be understood that since the plurality of rotating adsorption platforms are coaxially arranged, when detecting a small-sized silicon carbide wafer, the small-sized silicon carbide wafer can be placed on the rotating adsorption platform 100 with a smaller radial dimension, and the rotating adsorption platform 100 with a radial dimension adsorbs the wafer and drives the wafer to be tested to rotate. When detecting a large-sized silicon carbide wafer, it is not necessary to replace the small-sized annular rotating adsorption platform 100 with a large-sized annular rotating adsorption platform 100. The large-sized silicon carbide wafer can be directly placed on the corresponding rotating adsorption platform 100 with a larger radial dimension.

[0033] That is to say, it is not necessary to disassemble the original fixing ring and replace it with a fixing ring of a different size. Only the silicon carbide crystal needs to be placed on the rotating adsorption platform of the corresponding size. The detection efficiency of the silicon carbide wafer is improved.

[0034] Furthermore, an optical sensor (not shown in the figure), a surface analysis sensor (not shown in the figure), or a dislocation detection system (not shown in the figure) is used to detect the surface defects, the surface chemical composition of the wafer, or the lattice integrity of the silicon carbide wafer.

[0035] Optionally, the defect detection device 1 further includes a detection box body (not shown in the figure) and an optical sensor (not shown in the figure), a surface analysis sensor (not shown in the figure), and a dislocation detection system (not shown in the figure) arranged in the detection box body. The plurality of annular rotating adsorption platforms arranged coaxially are located in the detection box body. The optical sensor is used to detect the surface defects of the silicon carbide crystal to be detected on the rotating adsorption platform, and the surface analysis sensor is used to analyze the surface chemical composition of the silicon carbide wafer to be detected on the rotating adsorption platform.

[0036] The optical sensor can be a high-resolution camera, a microscope, a laser interferometer, etc. The surface analysis sensor can be an X-ray photoelectron spectrometer or a secondary ion mass spectrometry interface, etc. The dislocation detection system can be an X-ray topograph.

[0037] Of course, an illumination system (not shown in the figure) may also be provided inside the detection chamber. The illumination system provides a bright and relatively uniform light source inside the detection chamber to ensure that the surface of the wafer is clearly visible during the detection process.

[0038] In this embodiment, the number of rotating adsorption platforms is two, namely the second rotating adsorption platform 120 and the first rotating adsorption platform 110. The radial dimension of the second rotating adsorption platform 120 is smaller than that of the first rotating adsorption platform 110. The first rotating adsorption platform 110 can move relative to the second rotating adsorption platform 120 along its own axis direction. It can be understood that when detecting a large-sized silicon carbide wafer, the first rotating adsorption platform 110 can move upward a preset distance along its own axis direction. At this time, the large-sized wafer can be placed on the first rotating adsorption platform 110 on the outer ring. The first rotating adsorption platform 110 adsorbs the large-sized wafer and drives the large-sized wafer to rotate, so as to avoid friction between the large-sized silicon carbide wafer and the second rotating adsorption platform 120 with a smaller radial dimension to wear the wafer.

[0039] For example, the above-mentioned second rotating adsorption platform 120 is used to adapt to a six-inch silicon carbide wafer, and the first rotating adsorption platform 110 is used to adapt to an eight-inch silicon carbide wafer. When detecting a six-inch silicon carbide wafer, the six-inch silicon carbide wafer can be placed on the second rotating adsorption platform 120. After the six-inch silicon carbide wafer is detected, the six-inch silicon carbide wafer is collected. Then, when detecting an eight-inch silicon carbide wafer, the eight-inch silicon carbide wafer can be placed on the first rotating adsorption platform 110.

[0040] Similarly, in this embodiment, the second rotating adsorption platform 120 can move relative to the first rotating adsorption platform 110 along its own axis direction.

[0041] In this embodiment, only the first lifting device 300 connected to the first rotating adsorption platform 110 is provided. That is to say, when the first lifting device 300 drives the first rotating adsorption platform 110 to move along its own axis, it can also realize the movement of the second rotating adsorption platform 120 relative to the first rotating adsorption platform 110 along its own axis.

[0042] In this embodiment, the defect detection device 1 further includes a connecting table 400 and a rotating mechanism 500. Among them, the first lifting device 300, the first rotating adsorption platform 110 and the second rotating adsorption platform 120 are all arranged on the connecting table 400. Specifically, the first lifting device 300, the first rotating adsorption platform 110 and the second rotating adsorption platform 120 are all arranged on one side of the connecting table 400, and the rotating mechanism 500 is arranged on the other side of the connecting table 400.

[0043] The rotating mechanism 500 is a rotating platform shared by the second rotating adsorption platform 120 and the first rotating adsorption platform 110. The first lifting device 300 is disposed on the connecting platform 400. The first lifting device 300 is connected to the first rotating adsorption platform 110 and is used to drive the first rotating adsorption platform 110 to move along its own axis. The rotating mechanism 500 is connected to the connecting platform 400 and is used to drive the second rotating adsorption platform 120 and the first rotating adsorption platform 110 to rotate around their own axes. That is to say, the rotating mechanism 500 can drive the connecting platform 400 to rotate, and then drive the second rotating adsorption platform 120 and the first rotating adsorption platform 110 disposed on the connecting platform 400 to rotate.

[0044] Optionally, the driving end of the first lifting device 300 is connected to one end of the first rotating adsorption platform 110 close to the connecting platform 400. The dimension of the first rotating adsorption platform 110 in the axial direction is smaller than the dimension of the second rotating adsorption platform 120 in the axial direction. The first lifting device 300 can drive one end of the first rotating adsorption platform 110 away from the connecting platform 400 to be higher or lower than the height of one end of the second rotating adsorption platform 120 away from the connecting platform 400 in the axial direction.

[0045] That is to say, when detecting a small-sized silicon carbide wafer, after the first rotating adsorption platform 110 is lowered by a preset distance, the height of one end of the first rotating adsorption platform 110 away from the connecting platform can be lower than the height of one end of the second rotating adsorption platform 120 away from the connecting platform. It should be noted that the first rotating adsorption platform 110 has a first mounting surface, and the second rotating adsorption platform has a second mounting surface. At this time, the height of the first mounting surface is lower than the height of the second mounting surface. After a certain height difference is formed between the second rotating adsorption platform 120 and the first rotating adsorption platform 110, the mounting surface of the second rotating adsorption platform 120 adsorbs the small-sized wafer to be measured and drives the small-sized wafer to rotate, which can also avoid the friction between the small-sized wafer and the first rotating adsorption platform 110 when the small-sized wafer is driven to rotate by the second rotating adsorption platform 120.

[0046] When detecting a large-sized silicon carbide wafer, the first lifting device 300 can drive the first rotating adsorption platform 110 to rise by a preset distance, so that the height of one end of the first rotating adsorption platform 110 away from the connecting platform is higher than the height of one end of the second rotating adsorption platform 120 away from the connecting platform. At this time, the height of the first mounting surface is higher than the height of the second mounting surface, and the silicon carbide wafer to be measured is placed on the first mounting surface.

[0047] In some embodiments, the rotating device of the second rotating adsorption platform 120 and the rotating device of the first rotating adsorption platform 110 have different structures, that is, the second rotating adsorption platform 120 and the first rotating adsorption platform 110 each have a set of rotating devices. That is to say, the second rotating device connected to the second rotating adsorption platform 120 and the first rotating device connected to the first rotating adsorption platform 110 have different structures. In some other embodiments, the first rotating adsorption platform 110 and the second rotating adsorption platform 120 are each connected with a lifting device and a rotating device.

[0048] Optionally, the defect detection device 1 further includes a first lifting device 300 and a first rotating device. The first lifting device 300 is connected to the first rotating adsorption platform 110 and is used to drive the first rotating adsorption platform 110 to move along its own axis. The first rotating device is connected to the first rotating adsorption platform 110 and is used to drive the first rotating adsorption platform 110 to rotate around its own axis. It can be understood that the first rotating device can be connected to the first lifting device 300 to indirectly connect to the first rotating adsorption platform 110, so as to drive the first lifting device 300 and the first rotating adsorption platform 110 to rotate around the axis of the first rotating adsorption platform 110 at the same time.

[0049] Optionally, the defect detection device 1 further includes a second lifting device and a second rotating device. The second lifting device is connected to the second rotating adsorption platform 120 and is used to drive the second rotating adsorption platform 120 to move along its own axis. The second rotating device is connected to the second rotating adsorption platform 120 and is used to drive the second rotating adsorption platform 120 to rotate around its own axis. Similarly, the second rotating device can be connected to the second lifting device to indirectly connect to the second rotating adsorption platform 120, so as to drive the second lifting device and the second rotating adsorption platform 120 to rotate around the axis of the second rotating adsorption platform 120 at the same time.

[0050] The first lifting device 300 includes a first lifting member and a first support platform. The first rotating device is connected to the first support member, and the first rotating device drives the first support member to rotate, thereby driving the first rotating adsorption platform 110 to rotate. Among them, the first lifting member can be a plurality of jacks arranged at intervals on the first support member, and the first lifting member can also be a lifting mechanism such as a hydraulic lifting cylinder.

[0051] Among them, the second lifting device includes a second support member and a second lifting member. The second lifting member is arranged on the second support platform. The second rotating device is connected to the second support member, and the second rotating device drives the second support member to rotate, thereby driving the second rotating adsorption platform 120 to rotate. Among them, the second lifting member can be a plurality of jacks arranged at intervals on the second support member, and the second lifting member can also be a lifting mechanism such as a hydraulic lifting cylinder.

[0052] Of course, in some embodiments, the second rotary adsorption platform 120 shares a rotary device with the first rotary adsorption platform 110. That is to say, the second rotary device connected to the second rotary adsorption platform 120 and the first rotary device connected to the first rotary adsorption platform 110 are of the same structure.

[0053] It should be noted that, in this embodiment, in order to facilitate the second rotary adsorption platform 120 to move smoothly relative to the first rotary adsorption platform 110 along its own axis, a preset distance is provided between the outer wall of the second rotary adsorption platform 120 and the inner wall of the first rotary adsorption platform 110.

[0054] The first rotary adsorption platform 110 is provided with a plurality of first vacuum holes 111. The plurality of first vacuum holes 111 are evenly spaced along the circumferential direction of the second rotary adsorption platform 120. The first vacuum holes 111 are used to connect to a vacuum generator (not shown in the figure). One end of the first vacuum hole 111 away from the vacuum generator is located on the first mounting surface and is used to adsorb the silicon carbide wafer. It can be understood that the first rotary adsorption platform 110 has an annular structure, and one ends of the plurality of first vacuum holes 111 away from the vacuum generator are evenly spaced along the circumferential direction of the first rotary adsorption platform 110 on the first mounting surface.

[0055] Similarly, the second rotary adsorption platform 120 is provided with a plurality of second vacuum holes 121. The plurality of second vacuum holes 121 are evenly spaced along the circumferential direction of the second rotary adsorption platform 120. The second vacuum holes 121 are used to connect to a vacuum generator (not shown in the figure). One end of the second vacuum hole 121 away from the vacuum generator is used to adsorb the silicon carbide wafer. It can be understood that the second rotary adsorption platform 120 has an annular structure, and one ends of the plurality of second vacuum holes 121 away from the vacuum generator are evenly spaced along the circumferential direction of the second rotary adsorption platform 120 on the second mounting surface.

[0056] It should be noted that the evenly spaced arrangement in this embodiment is not limited to a completely even spaced arrangement, as long as it is roughly even.

[0057] In summary, a defect detection device 1 for silicon carbide wafers provided by an embodiment of the present invention includes a plurality of rotary adsorption platforms 100 that are coaxially arranged and sleeved in sequence. The rotary adsorption platforms 100 are used to adsorb the wafers to be tested and drive the wafers to be tested to rotate. When detecting silicon carbide wafers of different sizes, it is not necessary to disassemble the original fixing ring and replace it with a fixing ring of a different size. It is only necessary to place the silicon carbide crystal on the rotary adsorption platform 100 of the corresponding size. This improves the detection efficiency of the silicon carbide wafers.

[0058] The above are only the preferred embodiments of the present utility model and are not intended to limit the present utility model. For those skilled in the art, the present utility model may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. A defect detection device for a silicon carbide wafer, characterized in that: include: A plurality of rotating adsorption platforms (100) are coaxially arranged and sleeved in sequence, the rotating adsorption platforms (100) being used to adsorb a wafer to be tested and drive the wafer to be tested to rotate, and the plurality of rotating adsorption platforms (100) are all in a circular ring shape.

2. The defect detection device for silicon carbide wafer according to claim 1, characterized in that: The number of the rotating adsorption platforms is two, namely a second rotating adsorption platform (120) and a first rotating adsorption platform (110); the radial dimension of the second rotating adsorption platform (120) is smaller than the radial dimension of the first rotating adsorption platform (110); and the first rotating adsorption platform (110) can move relative to the second rotating adsorption platform (120) along its own axial direction.

3. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The second rotating adsorption platform (120) can move along its own axis relative to the first rotating adsorption platform (110).

4. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The defect detection device also includes a connecting platform (400), a first lifting device (300) and a rotating mechanism (500); the first lifting device (300), the first rotating adsorption platform (110) and the second rotating adsorption platform (120) are all arranged on the connecting platform (400); the first lifting device (300) is connected to the first rotating adsorption platform (110) and is used to drive the first rotating adsorption platform (110) to move along its own axis; the first lifting device (300) is arranged on the connecting platform (400); the rotating mechanism (500) is connected to the connecting platform (400) and is used to drive the second rotating adsorption platform (120) and the first rotating adsorption platform (110) to rotate around their own axes.

5. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The defect detection device also includes a first lifting device (300) and a first rotating device. The first lifting device (300) is connected to the first rotating adsorption platform (110) and is used to drive the first rotating adsorption platform (110) to move along its own axis. The first rotating device is connected to the first rotating adsorption platform (110) and is used to drive the first rotating adsorption platform (110) to rotate around its own axis.

6. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The defect detection device also includes a second lifting device and a second rotating device. The second lifting device is connected to the second rotating adsorption platform (120) and is used to drive the second rotating adsorption platform (120) to move along its own axis. The second rotating device is connected to the second rotating adsorption platform (120) and is used to drive the second rotating adsorption platform (120) to rotate around its own axis.

7. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The second rotating adsorption platform (120) is provided with a plurality of second vacuum holes (121), the plurality of second vacuum holes (121) are evenly spaced along the circumference of the second rotating adsorption platform (120), and the second vacuum holes (121) are used to be connected to a vacuum generator.

8. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: The first rotating adsorption platform (110) is provided with a plurality of first vacuum holes (111), the plurality of first vacuum holes (111) are evenly spaced along the circumference of the first rotating adsorption platform (110), and the first vacuum holes (111) are used to be connected to a vacuum generator.

9. The defect detection device for silicon carbide wafer according to claim 2, characterized in that: There is a preset distance between the inner peripheral wall of the first rotating adsorption platform (110) and the outer peripheral wall of the second rotating adsorption platform (120).

10. The defect detection device for silicon carbide wafer according to claim 4, characterized in that: The driving end of the first lifting device (300) is connected to an end of the first rotating adsorption platform (110) close to the connecting platform (400); the dimension of the first rotating adsorption platform (110) in the axial direction is smaller than the dimension of the second rotating adsorption platform (120) in the axial direction; the first lifting device (300) can drive the end of the first rotating adsorption platform (110) away from the connecting platform (400) to be higher than the height of the end of the second rotating adsorption platform (120) away from the connecting platform (400) in the axial direction or lower than the height of the end of the second rotating adsorption platform (120) away from the connecting platform (400).

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