Single crystal furnace and system for single crystal stretching

Abstract

The utility model provides a single crystal furnace and a system for single crystal stretching. The single crystal furnace comprises an auxiliary chamber component, a main chamber component and an adjusting component, the auxiliary chamber component is communicated with the main chamber component; the adjusting component is arranged in the auxiliary chamber component and can adjust the gap between the auxiliary chamber component at the preset position and the crystal bar so as to adjust the flow speed of the inert gas in the auxiliary chamber component, and the temperature of the crystal bar can reach the preset temperature. The temperature of the circumferential side wall of the crystal bar and the temperature of the inner core of the crystal bar tend to be consistent, so that the problem of dislocation of the crystal bar is avoided. In addition, the distance from a growth interface to the liquid level of the liquid silicon material is reduced to a certain extent; the crystal bar cooling rate is accelerated, and the crystal bar growth speed is increased; and more heat is taken away, so that the resistance of the circumferential side wall of the crystal bar tends to be consistent with the resistance of the inner core of the crystal bar, the resistance and impurities are uniformly distributed in the radial direction of the crystal bar, and the resistivity uniformity is ensured.

Description

Technical Field

[0001] This application relates to the technical field of ingot preparation, and particularly to a single crystal furnace and a system for single crystal drawing. Background Art

[0002] In the process of preparing CZ (Czochralski method) silicon single crystals, the most commonly used protective gas is high-purity argon; argon undertakes the functions of improving melt flow, regulating the thermal field, and removing impurities such as oxygen and carbon. During the crystal pulling process, argon enters from the top of the secondary chamber furnace barrel, passes through the secondary chamber furnace barrel and the thermal shield, enters the main chamber to carry away volatiles, and finally discharges from the furnace bottom.

[0003] Currently, the secondary chamber furnace barrel is mainly composed of a 4 - 5m cylinder, and argon flows out from the gap between the secondary chamber furnace barrel and the crystal ingot, taking away the heat of the crystal ingot and reducing the surface temperature of the crystal ingot.

[0004] However, the existing such structure has the following defects: due to the large gap between the crystal ingot and the secondary chamber furnace barrel, the Reynolds number of the argon flow is low, and the thermal resistance on the surface of the crystal ingot is large, so that the argon takes away less heat of the crystal ingot. After the crystal ingot is larger than 1500mm, the solid-liquid interface of the crystal ingot concaves towards the silicon liquid side, increasing the thermal stress of the crystal ingot and ultimately resulting in the dislocation of the crystal ingot; in addition, the fact that the argon takes away less heat of the crystal ingot will also lead to uneven distribution of resistance and impurities in the radial direction of the crystal ingot.

[0005] Therefore, there is an urgent need for a single crystal furnace and a system for single crystal drawing to solve the technical problems existing in the prior art to a certain extent. Summary of the Utility Model

[0006] The purpose of this application is to provide a single crystal furnace and a system for single crystal drawing to solve, to a certain extent, the technical problems of crystal ingot dislocation and uneven distribution of resistance and impurities in the radial direction caused by the fact that argon takes away less heat of the crystal ingot.

[0007] This application provides a single crystal furnace for crystal pulling of liquid silicon material. During the process of crystal pulling of liquid silicon material, an inert gas needs to be introduced to reduce the temperature of the crystal ingot formed by crystal pulling of liquid silicon material; the single crystal furnace includes a secondary chamber member, a main chamber member, and an adjusting member;

[0008] The secondary chamber member is communicated with the main chamber member; the main chamber member is used for melting polysilicon into liquid silicon material, and the secondary chamber member is used for crystal pulling of liquid silicon material;

[0009] The adjusting member is arranged on the secondary chamber member, and the adjusting member can adjust the gap between the secondary chamber member and the crystal ingot at a preset position to adjust the flow rate of the inert gas in the secondary chamber member, so that the temperature of the crystal ingot reaches a preset temperature.

[0010] In the above technical solution, further, the adjusting member includes a cylinder; the cylinder is attached to the inner wall of the secondary chamber member at the preset position;

[0011] The inner side wall surface of the cylinder protrudes in an arc towards the axis of the secondary chamber member, so that the inner side wall surface of the cylinder is a curved surface, to adjust the gap between the ingot and the secondary chamber member at the preset position.

[0012] In the above technical solution, further, the adjusting member includes a cylinder;

[0013] The cylinder is attached to the inner wall of the secondary chamber member at the preset position;

[0014] The inner side wall surface of the cylinder protrudes in a continuous arc towards the axis of the secondary chamber member, so that the inner side wall surface of the cylinder is a wavy surface, to adjust the gap between the ingot and the secondary chamber member at the preset position.

[0015] In the above technical solution, further, the adjusting member includes a first cylinder and a second cylinder;

[0016] The first cylinder is attached to the inner wall of the secondary chamber member at the preset position, and the second cylinder is sleeved on the first cylinder;

[0017] The size of the second cylinder is smaller than that of the first cylinder, to adjust the gap between the ingot and the secondary chamber member at the preset position.

[0018] In the above technical solution, further, both the first cylinder and the second cylinder are cylinders, and the diameter of the second cylinder is smaller than that of the first cylinder.

[0019] In the above technical solution, further, the first cylinder is a cylinder, the second cylinder is a cube, and the length of the diagonal of the second cylinder is smaller than the diameter of the first cylinder.

[0020] In the above technical solution, further, the secondary chamber member includes a secondary furnace cylinder;

[0021] An air inlet for introducing the inert gas is provided on the secondary furnace cylinder.

[0022] In the above technical solution, further, an isolation valve is further provided on the secondary furnace cylinder;

[0023] When the isolation valve is closed, the secondary chamber member can be opened to be able to take out the ingot.

[0024] In the above technical solution, further, the main chamber member includes a main furnace body and a crucible;

[0025] The crucible is arranged on the main furnace body, and the crucible can melt the polysilicon into liquid silicon material.

[0026] The present application also provides a system for single crystal stretching, comprising the above-mentioned single crystal furnace.

[0027] Compared with the prior art, this application has the following beneficial effects:

[0028] The present application provides a single crystal furnace, which is used for pulling liquid silicon material. During the process of pulling the liquid silicon material, an inert gas needs to be introduced to reduce the temperature of the crystal rod formed by pulling the liquid silicon material. The single crystal furnace includes a sub-chamber component, a main chamber component and an adjusting component.

[0029] The auxiliary chamber component is connected to the main chamber component; the main chamber component is used to melt polysilicon into liquid silicon material, and the auxiliary chamber component is used to pull the liquid silicon material;

[0030] The regulating member is disposed on the sub-chamber member, and the regulating member can adjust the gap between the sub-chamber member and the crystal rod at a preset position to adjust the flow rate of the inert gas in the sub-chamber member so that the temperature of the crystal rod reaches a preset temperature.

[0031] In summary, the inner wall surface of the cylinder is convex in a circular arc toward the axis of the sub-chamber component, that is, the gap between the crystal rod and the sub-chamber component is reduced at the preset position. Compared with the existing larger gap, during the operation of the present application, when argon gas flows through this gap, the flow rate of argon gas will rise sharply, the Reynolds number of the argon gas flow (the Reynolds number of the fluid is the ratio of the inertia force of the flowing fluid to the viscosity force) increases, and the thermal resistance of the surface of the crystal rod decreases, so that the argon gas takes away more heat. More heat is taken away, so that the temperature of the circumferential side wall of the crystal rod and the temperature of the inner core of the crystal rod tend to be consistent, and then the solid-liquid interface of the crystal rod can be closer to a straight line, and the inner core of the crystal rod will not be concave toward the liquid silicon material, thereby ensuring that the crystal rod will not be misaligned.

[0032] In addition, the present application changes the gap between the sub-chamber component and the crystal rod so that the argon gas takes away more heat, which just makes the growth interface flat. Compared with the existing concave growth interface, this flat growth interface reduces the distance between the growth interface and the liquid surface of the liquid silicon material to a certain extent.

[0033] In addition, the present application adopts an inner side wall structure with a curved surface, and its top has the largest circumference, which can maximize the entry of cold argon gas. When the cold argon gas reaches the thinnest part, that is, when it reaches the bump position, it contacts the high-temperature crystal bar. At this time, first, due to the decrease in the diameter of the cylinder body, the flow rate of the cold argon gas increases, and the heat in the crystal bar can be taken away as soon as possible. Second, due to the decrease in the diameter of the cylinder body, the volume of the cold argon gas is also compressed, so the pressure increases. And with the increase in pressure, the heat-carrying capacity of the cold argon gas fluid will increase accordingly. Thus, in the narrow waist part, the cold argon gas can absorb the heat of the crystal bar to the greatest extent, thereby cooling the crystal bar, accelerating the cooling rate of the crystal bar, and increasing the growth rate of the crystal bar.

[0034] In addition, more heat is taken away, which can make the circumferential side wall and the inner core of the crystal bar tend to become solid at the same time, so that the resistance of the circumferential side wall of the crystal bar is consistent with the resistance of the inner core of the crystal bar, and the impurities on the circumferential side wall of the crystal bar are consistent with the impurities of the inner core of the crystal bar, that is, the resistance and impurities are evenly distributed in the radial direction of the crystal bar, ensuring the resistivity uniformity.

[0035] The present application also provides a system for single crystal drawing, including the above-mentioned single crystal furnace. Therefore, it has all the beneficial effects of the above-mentioned single crystal furnace, so it will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0037] Figure 1 It is the temperature distribution diagram of the crystal bar with the existing structure;

[0038] Figure 2 It is the temperature distribution diagram of the crystal bar using the single crystal furnace of the present application;

[0039] Figure 3 It is the argon gas flow velocity distribution diagram in the auxiliary chamber component of the present application;

[0040] Figure 4 It is the structural schematic diagram of the adjusting component provided in the first embodiment of the present application;

[0041] Figure 5 For Figure 4 The sectional view;

[0042] Figure 6 It is the structural schematic diagram of the adjusting component provided in the second embodiment of the present application;

[0043] Figure 7This is a schematic structural diagram of the single crystal furnace provided by this application.

[0044] Reference numerals: 1 - auxiliary chamber member; 3 - adjusting member; 4 - cylinder; 5 - inner side wall surface; 6 - gap; 7 - auxiliary furnace cylinder; 8 - air inlet; 9 - isolation valve; 10 - main furnace body; 11 - crystal rod; 12 - bump. Detailed implementation manners

[0045] The following detailed implementation manners are provided to help readers obtain a comprehensive understanding of the methods, devices, and / or systems described herein. However, after understanding the disclosure of this application, various changes, modifications, and equivalents of the methods, devices, and / or systems described herein will be apparent. For example, the order of operations described herein is merely an example and is not limited to the order set forth herein. Rather, changes that will be apparent after understanding the disclosure of this application can be made, except for operations that must occur in a specific order. In addition, descriptions of features known in the art may be omitted for the sake of clarity and conciseness.

[0046] The features described herein may be implemented in different forms and should not be construed as limited to the examples described herein. Rather, the examples described herein are provided only to illustrate some of the many possible ways of implementing the methods, devices, and / or systems described herein that will be apparent after understanding the disclosure of this application.

[0047] Throughout the specification, when an element (such as a layer, region, or substrate) is described as "on" another element, "connected to" another element, "bonded to" another element, "above" another element, or "covering" another element, it may be directly "on" another element, "connected to" another element, "bonded to" another element, "above" another element, or "covering" another element, or there may be one or more other elements therebetween. In contrast, when an element is described as "directly on" another element, "directly connected to" another element, "directly bonded to" another element, "directly above" another element, or "directly covering" another element, there may be no other elements therebetween.

[0048] As used herein, the term "and / or" includes any one of the listed related items and any combination of any two or more of them.

[0049] Although terms such as "first", "second", and "third" may be used herein to describe various components, elements, regions, layers, or sections, these components, elements, regions, layers, or sections are not limited by these terms. Rather, these terms are only used to distinguish one component, element, region, layer, or section from another. Thus, a first component, element, region, layer, or section as referred to in the examples described herein may also be termed a second component, element, region, layer, or section without departing from the teachings of the examples.

[0050] For ease of description, spatial relationship terms such as "above", "upper", "below", and "lower" may be used herein to describe the relationship of one element to another as shown in the figures. Such spatial relationship terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "above" or "upper" relative to another element will then be "below" or "lower" relative to the other element. Thus, the term "above" includes both the orientation of "above" and "below" depending on the spatial orientation of the device. The device may also be positioned in other ways (e.g., rotated 90 degrees or at other orientations), and the spatial relationship terms used herein will be interpreted accordingly.

[0051] The terms used herein are for the purpose of describing various examples only and are not intended to limit the disclosure. Unless the context clearly dictates otherwise, the singular forms are also intended to include the plural forms. The terms "comprises", "comprising", and "having" list the stated features, quantities, operations, components, elements, and / or combinations thereof that exist, but do not preclude the presence or addition of one or more other features, quantities, operations, components, elements, and / or combinations thereof.

[0052] Due to manufacturing techniques and / or tolerances, variations in the shapes shown in the figures may occur. Thus, the examples described herein are not limited to the specific shapes shown in the figures but include changes in shape that occur during manufacturing.

[0053] The features of the examples described herein may be combined in various ways that will be apparent after understanding the disclosure of this application. In addition, although the examples described herein have a variety of configurations, other configurations are possible as will be apparent after understanding the disclosure of this application.

[0054] Example 1

[0055] This application provides a single crystal furnace. The main part of the single crystal furnace has not been improved, and its structure is the same as that of the single crystal furnace described in detail in Chapter 2 of "Czochralski Single Crystal Technology", edited by Huang Youzhi and Wang Li, published by Chemical Industry Press, the first edition in July 2099, Beijing.

[0056] Specifically, the single crystal furnace includes components such as a frame, a sub-furnace component, and a main chamber component.

[0057] Among them, the frame is composed of a cast iron base, lower columns, and upper columns, and is the support device of the furnace. The sub-furnace component and the main chamber component are the places where single crystal growth occurs. It provides all the necessary conditions for single crystal growth, such as good vacuum and argon protection to ensure that the melt is not oxidized; good cooling of all parts of the furnace body to ensure that the thermal field is not disturbed; providing stable rotation and smooth ascent of the crystal rod 11, providing reverse rotation and synchronous ascent of the melt, and ensuring that the crystallization interface is always in the same position; providing a reasonable thermal field, allowing only the seed crystal, the only crystal nucleus, to grow, and having an appropriate degree of supercooling, which is conducive to conditions such as "two-dimensional plane nucleation and lateral growth on the side".

[0058] Among them, the main chamber component is the heart of the furnace body. It is composed of a furnace bottom plate, a lower furnace cylinder, an upper furnace cylinder, and a furnace cover. They are all double-layer water-cooled structures welded by stainless steel. The main furnace chamber is used to install the thermal system for growing single crystals and polysilicon raw materials, etc. There are two copper electrodes and a temperature sensor on the furnace bottom plate. The graphite electrode is installed above the copper electrode. Both copper electrodes are equipped with insulating protective sleeves. The upper end of the copper electrode is installed with a heater, and the lower end is connected to a water-cooled cable. Cooling water is introduced through the water jacket at the lower part of the copper electrode. The upper interface is the water outlet, and the lower interface is the water inlet. There is a flap valve on the furnace cover, which can be used to isolate the main chamber component and the sub-chamber component 1 when necessary. There is an observation window on the front of the furnace cover, through which the situation inside the furnace can be observed and the crystal diameter can be measured. There is a light extraction window on the left side, which is used to extract the diameter aperture signal of the crystal rod 11. There are stop mouth positions between the furnace cover and the upper furnace cylinder, and between the lower furnace cylinder and the furnace bottom plate to ensure the accuracy of each furnace closing.

[0059] Among them, the sub-furnace component includes components such as a sub-furnace chamber, a seed crystal rotation mechanism, a flexible shaft lifting chamber, a precision worm and worm gear reducer, and a crystal lifting servo unit. At the same time, it is also the receiving chamber for Czochralski single crystal. There is also a vacuum pumping port and a vacuum pressure gauge, etc. on the sub-furnace chamber. There is an observation hole on the upper part of the sub-furnace chamber, which is used to observe the seed crystal chuck, adjust the limit position of the chuck, and adjust the inflation ring, etc. In addition, there is a gas release valve on the sub-furnace chamber. When it is necessary to release gas and open the furnace in case of special circumstances, the gas release valve can be opened to release gas. Some furnace types have side doors.

[0060] In actual use, the main chamber component pulls the liquid silicon material. During the process of pulling the liquid silicon material, an inert gas needs to be introduced to reduce the temperature of the crystal rod 11 formed by pulling the liquid silicon material. It was found that due to the large gap 6 between the crystal rod 11 and the auxiliary chamber furnace, the Reynolds number of the argon gas flow is low, and the surface thermal resistance of the crystal rod 11 is large, so that the argon gas takes away less heat from the crystal rod 11, resulting in the crystal rod 11 being larger than 1500mm. The solid-liquid interface of the crystal rod 11 is concave toward the silicon liquid side, which increases the thermal stress of the crystal rod 11 and eventually causes the crystal rod 11 to be misaligned; in addition, the small amount of heat taken away by the argon gas from the crystal rod 11 will also lead to uneven resistance and impurity distribution of the crystal rod 11 in the radial direction.

[0061] Therefore, the present application improves upon the above-mentioned existing structure and solves the above-mentioned technical problems, which will be described in detail below using argon as the inert gas.

[0062] Combination Figure 4 , Figure 5 as well as Figure 7 As shown, the single crystal furnace in the present application includes a sub-chamber component 1, a main chamber component and an adjusting component 3; the sub-chamber component 1 is connected to the main chamber component; the main chamber component is used to melt polysilicon into liquid silicon material, and the sub-chamber component 1 is used to pull the liquid silicon material; the adjusting component 3 is arranged on the sub-chamber component 1, and the adjusting component 3 can adjust the gap 6 between the sub-chamber component 1 and the crystal rod 11 at a preset position to adjust the flow rate of the inert gas in the sub-chamber component 1 so that the temperature of the crystal rod 11 reaches the preset temperature.

[0063] Specifically, the adjusting component 3 includes a cylinder 4; the cylinder 4 is attached to the inner wall of the auxiliary chamber component 1 at a preset position; the inner wall surface 5 of the cylinder 4 protrudes in a circular arc toward the axis of the auxiliary chamber component 1, so that the inner wall surface 5 of the cylinder 4 is a curved surface to adjust the gap 6 between the crystal rod 11 at the preset position and the auxiliary chamber component 1.

[0064] Preferably, the height of the adjusting member 3 is 500 mm, the diameter of the outer wall is 205 mm, and the distance between the inner wall and the convex point 12 is 280 mm.

[0065] Preferably, the preset position refers to a position between 700-1000 mm from the liquid surface of the liquid silicon material.

[0066] Preferably, the preset temperature is 290°C-300°C.

[0067] In summary, the inner wall surface 5 of the cylinder body 4 protrudes in an arc towards the axis of the auxiliary chamber member 1, that is, the gap 6 between the crystal bar 11 and the auxiliary chamber member 1 is reduced at the preset position. Compared with the existing larger gap 6, during the crystal pulling process of the present application, when argon gas flows through this gap 6, the flow rate of the argon gas will rise sharply, the Reynolds number of the argon gas flow (the fluid Reynolds number is the ratio of the inertial force to the viscous force of the flowing fluid) increases, and the thermal resistance on the surface of the crystal bar 11 decreases. As a result, more heat is carried away by the argon gas, and more heat is carried away, making the temperature of the circumferential side wall of the crystal bar 11 and the temperature of the inner core of the crystal bar 11 tend to be consistent. Furthermore, the solid-liquid interface of the crystal bar 11 can be made closer to a straight line, so that the situation where the inner core of the crystal bar 11 concaves towards the liquid silicon material will not occur, and thus the problem of misalignment of the crystal bar 11 can be avoided.

[0068] The above-mentioned solid-liquid interface refers to the contact interface between the crystal bar 11 and the liquid silicon material. Usually, in the initial stage of the growth of the crystal bar 11, the distance between the solid-liquid interface (growth interface) and the top of the crystal bar 11 is small, the resistance to heat dissipation is also small, the supercooling degree of the growth interface is relatively large, and its position will shift towards the melt with a higher temperature, that is, the solid-liquid interface will protrude towards the liquid silicon material. This shape of the solid-liquid interface is called a convex interface. At the end stage of the growth of the crystal bar 11, the heat dissipation condition in the crystal bar 11 becomes worse, the temperature gradient decreases, the supercooling degree of the solid-liquid interface decreases, and the growth interface bulges towards the interior of the crystal bar 11 with a lower temperature, that is, the solid-liquid interface will concave towards the liquid silicon material. This solid-liquid interface is called a concave interface. Such a convex interface or concave interface will appear with the above-mentioned existing structure. However, neither of these convex interfaces and concave interfaces is ideal. When the boundary shape is not a plane, thermal stress will be generated inside the crystal bar 11 during the solidification process. When the thermal stress is less than the elastic stress, it will disappear after the crystal bar 11 cools; when the solid-liquid interface is overly convex or concave, the thermal stress may be greater than the elastic stress, directly resulting in dislocations or crystal transformation.

[0069] The flat growth interface between the convex interface and the concave interface is the most ideal. By changing the gap 6 between the auxiliary chamber member 1 and the crystal bar 11, the present application enables the argon gas to carry away more heat, which exactly makes the growth interface flat, thus ensuring that the crystal bar 11 will not have a misalignment problem.

[0070] In addition, by changing the gap 6 between the auxiliary chamber member 1 and the crystal bar 11, the present application enables the argon gas to carry away more heat, which exactly makes the growth interface flat. Compared with the existing concave growth interface, such a flat growth interface reduces the height of the growth interface from the liquid surface of the liquid silicon material to a certain extent.

[0071] In addition, the present application adopts the structure of the inner side wall surface 5 with a curved surface, and its top has the largest circumference, which can maximize the entry of cold argon gas. When the cold argon gas reaches the thinnest part, that is, when it reaches the bump 12 position, it contacts the high-temperature crystal bar 11. At this time, first, due to the decrease in the diameter of the cylinder body 4, the flow rate of the cold argon gas increases, and the heat in the crystal bar 11 can be taken away as soon as possible. Second, due to the decrease in the diameter of the cylinder body 4, the volume of the cold argon gas is also compressed, so the pressure increases. And with the increase in pressure, the heat-carrying capacity of the cold argon gas fluid will increase accordingly. Therefore, at the narrow waist, the cold argon gas can absorb the heat of the crystal bar 11 to the maximum extent, thereby cooling the crystal bar 11, accelerating the cooling rate of the crystal bar 11, and increasing the growth rate of the crystal bar 11.

[0072] In addition, more heat is taken away, which can make the circumferential side wall of the crystal bar 11 and the inner core tend to become solid at the same time, so that the resistance of the circumferential side wall of the crystal bar 11 is consistent with the resistance of the inner core of the crystal bar 11, and the impurities on the circumferential side wall of the crystal bar 11 are consistent with the impurities in the inner core of the crystal bar 11, that is, the resistance and impurities are evenly distributed in the radial direction of the crystal bar 11, ensuring the resistivity uniformity.

[0073] The above-mentioned impurities refer to phosphorus, boron, etc. added to the liquid silicon material.

[0074] In this embodiment, further, the sub-chamber member 1 includes a sub-furnace cylinder 7; an air inlet 8 for introducing inert gas is provided on the sub-furnace cylinder 7. Specifically, an argon (Ar) air inlet 8 is provided on the sub-furnace chamber. In the evacuated state, the sub-furnace chamber reaches a sealed state by its own weight and the main chamber.

[0075] In this embodiment, further, in combination Figures 4 - 7 As shown, an isolation valve 9 is further provided on the sub-furnace cylinder 7; when the isolation valve 9 is closed, the sub-chamber member 1 can be opened to be able to take out the crystal bar 11. Specifically, the isolation valve 9 is used to maintain process conditions such as local pressure and temperature in the furnace chamber. After closing this valve, the sub-chamber member 1 can be opened, so as to load and unload the seed crystal or take out the single crystal bar 11. The isolation valve 9 is a manual flap type, and a self-locking speed reducer is installed on the valve core, with light and flexible operation and good sealing effect. Both the valve core and the valve body are of double-layer water-cooled structure. An observation window is provided on the isolation valve 9 to facilitate observing the situation during crystal pulling.

[0076] In this embodiment, further, in combination Figures 4 - 7 As shown, the main chamber member includes a main furnace body 10 and a crucible; the crucible is arranged in the main furnace body 10, and the crucible can melt polysilicon into liquid silicon material.

[0077] In combination Figure 1 and Figure 2 As shown, Figure 1 For the temperature distribution of the crystal bar 11 adopting the existing structure, it can be seen from the figure that the temperature of the upper part of the crystal bar 11 is 322.1 °C.Figure 2 The temperature distribution of the crystal bar 11 of the present application is shown. It can be seen from the figure that the temperature of the upper part of the crystal bar 11 is 294.8 °C. Compared with the existing structure, the temperature of the upper part of the crystal bar 11 of the present application has decreased by 27.3 °C.

[0078] In addition, in combination with Figure 3 , Figure 3 The argon gas flow velocity distribution in the auxiliary chamber member 1 of the present application is shown. After the argon gas passes through the adjusting member 3, the flow velocity near the crystal bar 11 is increased, the Reynolds number is increased, the thermal resistance is reduced, the heat transfer efficiency is accelerated, and the temperature of the crystal bar 11 is reduced.

[0079] Embodiment 2

[0080] In combination with Figure 6 shown, in this embodiment, another structure of the adjusting member is provided. Specifically, the adjusting member 3 includes a cylinder body 4; the cylinder body 4 is attached to the inner wall of the auxiliary chamber member 1 at a preset position; the inner side wall surface of the cylinder body 4 protrudes continuously in an arc shape towards the axis of the auxiliary chamber member, so that the inner side wall surface of the cylinder body is a wavy surface to adjust the gap 6 between the crystal bar at the preset position and the auxiliary chamber member.

[0081] In this embodiment, another adjusting member is provided, which can achieve the same effect as that in Embodiment 1, and will not be specifically described here.

[0082] Embodiment 3

[0083] In this embodiment, another structure of the adjusting member is provided. Specifically, the adjusting member includes a first cylinder body and a second cylinder body; the first cylinder body is attached to the inner wall of the auxiliary chamber member at a preset position, and the second cylinder body is sleeved on the first cylinder body; the size of the second cylinder body is smaller than the size of the first cylinder body to adjust the gap between the crystal bar at the preset position and the auxiliary chamber member.

[0084] Furthermore, both the first cylinder body and the second cylinder body are cylinders, and the diameter of the second cylinder body is smaller than the diameter of the first cylinder body.

[0085] In this embodiment, another adjusting member is provided, which can achieve the same effect as that in Embodiment 1, and will not be specifically described here.

[0086] Embodiment 4

[0087] The difference between this embodiment and Embodiment 3 is that: the first cylinder body is a cylinder, the second cylinder body is a cube, and the length of the diagonal of the second cylinder body is smaller than the diameter of the first cylinder body.

[0088] It should be noted that in any of the above embodiments, the crystal bar passes through the adjusting member.

[0089] Embodiment 5

[0090] The present application also provides a system for single crystal drawing, including the above-mentioned single crystal furnace. Therefore, it has all the beneficial effects of the above single crystal furnace, so it will not be elaborated here.

[0091] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A single crystal furnace, used for pulling crystals from liquid silicon material, during which inert gas needs to be introduced to reduce the temperature of the crystal rod formed by pulling the liquid silicon material; characterized in that: The single crystal furnace comprises a sub-chamber component, a main chamber component and an adjusting component; The auxiliary chamber component is connected to the main chamber component; the main chamber component is used to melt polysilicon into the liquid silicon material, and the auxiliary chamber component is used to pull the liquid silicon material; The regulating member is disposed on the sub-chamber member, and the regulating member can adjust the gap between the sub-chamber member and the crystal rod at a preset position to adjust the flow rate of the inert gas in the sub-chamber member so that the temperature of the crystal rod reaches a preset temperature.

2. The single crystal furnace according to claim 1, characterized in that: The regulating member comprises a cylinder; The cylinder is attached to the inner wall of the auxiliary chamber component at the preset position; The inner wall surface of the cylinder body protrudes in an arc toward the axis of the auxiliary chamber component, so that the inner wall surface of the cylinder body is a curved surface to adjust the gap between the crystal rod at the preset position and the auxiliary chamber component.

3. The single crystal furnace according to claim 1, characterized in that: The regulating member comprises a cylinder; The cylinder is attached to the inner wall of the auxiliary chamber component at the preset position; The inner wall surface of the cylinder body protrudes in a continuous arc toward the axis of the auxiliary chamber component, so that the inner wall surface of the cylinder body is a wavy surface to adjust the gap between the crystal rod at the preset position and the auxiliary chamber component.

4. The single crystal furnace according to claim 1, characterized in that: The adjusting member comprises a first cylinder and a second cylinder; The first cylinder is attached to the inner wall of the auxiliary chamber component at the preset position, and the second cylinder is sleeved on the first cylinder; The size of the second cylinder is smaller than that of the first cylinder, so as to adjust the gap between the crystal rod at the preset position and the auxiliary chamber component.

5. The single crystal furnace according to claim 4, characterized in that: The first barrel and the second barrel are both cylindrical, and the diameter of the second barrel is smaller than the diameter of the first barrel.

6. The single crystal furnace according to claim 4, characterized in that: The first cylinder is a cylinder, the second cylinder is a cube, and the length of the diagonal of the second cylinder is smaller than the diameter of the first cylinder.

7. The single crystal furnace according to claim 1, characterized in that: The auxiliary chamber component includes an auxiliary furnace drum; The auxiliary furnace drum is provided with an air inlet for introducing the inert gas.

8. The single crystal furnace according to claim 7, characterized in that: The auxiliary furnace drum is also provided with an isolation valve; When the isolation valve is closed, the sub-chamber member can be opened to allow the crystal ingot to be taken out.

9. The single crystal furnace according to claim 1, characterized in that: The main chamber components include a main furnace body and a crucible; The crucible is arranged on the main furnace body, and the crucible can melt the polysilicon into liquid silicon material.

10. A system for single crystal stretching, characterized in that: A single crystal furnace comprising the single crystal furnace described in any one of claims 1-9.

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