Substrate structure with high-frequency metal foil

Abstract

The utility model relates to a substrate structure with a high-frequency metal foil. The substrate structure comprises an insulating base material, a release layer and the metal foil, the debonding layer is arranged on the surface of one side of the insulating substrate, and one side, far away from the insulating substrate, of the debonding layer is provided with a smooth surface; and the metal foil is formed on the smooth surface of the debonding layer. Therefore, after the debonding layer is separated from the metal foil, the metal foil with low surface roughness can be obtained, and the metal foil is favorable for transmitting high-frequency signals, so that the loss during signal transmission is reduced.

Description

Technical Field

[0001] This application relates to a substrate structure, particularly to a substrate structure with a high-frequency metal foil. Background Art

[0002] With the rapid development of communication technologies, signals can now be transmitted at higher frequencies (e.g., 10 GHz). The higher the frequency of signal transmission, the faster and larger the data volume of communication can be achieved. However, due to the skin effect during signal transmission, electronic signals concentrate on the surface of the conductor (e.g., copper foil) being transmitted. If the surface of the copper foil is too rough, it will affect the transmission effect of high-frequency signals, resulting in excessive transmission loss or signal distortion. The higher the frequency of the transmitted signal, the more obvious and serious these problems will become.

[0003] In view of this, how to effectively and cost-effectively manufacture a metal conductor with a highly flat surface is the technical direction actively developed by those skilled in the art to improve the defects of the prior art. Summary of the Utility Model

[0004] The purpose of this application is to solve the problems of excessive transmission loss or signal distortion caused by the rough surface of the conductor when transmitting high-frequency signals.

[0005] The foregoing purpose does not prevent the existence of other purposes. Purposes that can be deduced by those of ordinary skill in the art from the descriptions in the specification, claims, or drawings of this application are also included in the purposes of this application. Therefore, the purposes of this application are not limited to the foregoing purposes.

[0006] To achieve the above purpose, this application provides a substrate structure with a high-frequency metal foil. The substrate structure includes an insulating substrate, a release layer, and a metal foil. The release layer is disposed on one surface of the insulating substrate, and the side of the release layer away from the insulating substrate has a smooth surface; the metal foil is formed on the smooth surface of the release layer.

[0007] In a preferred embodiment of this application, a seed layer is further included, and the seed layer is located between the smooth surface and the metal foil.

[0008] In a preferred embodiment of this application, the thickness of the seed layer is between 10 nanometers and 1 micrometer.

[0009] In a preferred embodiment of this application, the seed layer is formed on the release layer by a method selected from electroless plating, sputtering, and evaporation.

[0010] In a preferred embodiment of this application, the metal foil is formed on the seed layer by electroplating.

[0011] In a preferred embodiment of the present application, the release layer has an adhesive and a body. The adhesive is disposed on one surface of the insulating substrate, and the body is located on the side of the adhesive away from the insulating substrate.

[0012] In a preferred embodiment of the present application, the thickness of the insulating substrate is between 2 micrometers and 500 micrometers.

[0013] In a preferred embodiment of the present application, the thickness of the release layer is between 30 nanometers and 3 micrometers.

[0014] In a preferred embodiment of the present application, the thickness of the metal foil is between 100 nanometers and 105 micrometers.

[0015] Therefore, after separating the release layer from the metal foil, the surface of the metal foil in contact with the smooth surface has a relatively low surface roughness and can be used as a transmission conductor for high-frequency signals, thereby reducing the loss during signal transmission. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic structural diagram of a substrate structure according to a first embodiment of the present application.

[0017] Figure 2 is a schematic structural diagram of a substrate structure according to a second embodiment of the present application.

[0018] Figure 3 is a schematic structural diagram of a substrate structure according to a third embodiment of the present application.

[0019] Figure 4 is a schematic structural diagram of a substrate structure according to a fourth embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To facilitate the description of the central idea expressed in the above Summary of the Invention section of the present application, specific embodiments are used for illustration. In the embodiments, various different objects are depicted according to suitable illustrative proportions, dimensions, deformation amounts, or displacement amounts, rather than being drawn according to the proportions of actual components. This is explained in advance here.

[0021] The following describes in detail the exemplary embodiments of the present application with reference to the accompanying drawings. It is not intended to limit the technical principles of the present application to the specifically disclosed embodiments, and the scope of the present application is only limited by the claims, covering alternatives, modifications, and equivalents.

[0022] Please refer to Figures 1 to 4 As shown, in an embodiment of the present application, the present application provides a substrate structure 100, which includes an insulating substrate 10, a release layer 20, and a metal foil 30. By forming the above structure, the produced metal foil 30 has a relatively smooth surface.

[0023] The material of the insulating substrate 10 can be polyethylene terephthalate (PET), polyimide (PI), polyamide (PA), polycarbonate (PC), triallyl cyanurate (TAC), polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), glass, etc.

[0024] In this embodiment, the thickness of the insulating substrate 10 can be between 2 microns and 500 microns, for example: 2, 3.8, 4.5, 6, 8, 12, 23, 25, 38, 40, 55, 75, 80, 100, 125, 150, 175, 188, 250, 350, and 500 microns, etc.

[0025] The release layer 20 is disposed on one surface of the insulating substrate 10, and the side of the release layer 20 away from the insulating substrate 10 has a smooth surface 21. The material of the release layer 20 can be silicon, fluorine, and is formed on the insulating substrate 10 by a coating method.

[0026] In this embodiment, the thickness of the release layer 20 can be between 30 nanometers and 3 microns, for example: 30, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, and 950 nanometers, or 1, 1.2, 1.4, 1.6, 1.8, 2.0, 2.2, 2.4, 2.6, 2.8, and 3 microns, etc.

[0027] Please refer to Figure 2 As shown, in the second embodiment of the present application, the release layer 20 has an adhesive 22 and a body 23. The adhesive 22 is disposed on one surface of the insulating substrate 10, the body 23 is located on the side of the adhesive 22 away from the insulating substrate 10, and the smooth surface 21 is located on the side of the body 23 away from the insulating substrate 10.

[0028] Please refer to Figure 1 and Figure 2 As shown, the metal foil 30 is formed on the smooth surface 21 of the release layer 20, that is, the release layer 20 is located between the insulating substrate 10 and the metal foil 30. The metal foil 30 can be a copper foil and can be formed on the release layer 20 by electroplating, electroless plating, sputtering, coating, evaporation, etc.

[0029] In this embodiment, the thickness of the metal foil 30 can be between 100 nanometers and 105 micrometers, for example: 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, and 950 nanometers, or 1, 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, and 105 micrometers, etc.

[0030] Next, the insulating substrate 10, the release layer 20, and the metal foil 30 are separated. The surface of the metal foil 30 in contact with the smooth surface 21 has a lower surface roughness, and thus a metal foil 30 with a low surface roughness can be obtained.

[0031] Please refer to Figure 3 As shown, in the third embodiment of the present application, the substrate structure 100 further includes a seed layer 40. The seed layer 40 is located between the smooth surface 21 and the metal foil 30. The seed layer 40 is formed on the release layer 20 by a method selected from electroless plating, sputtering, and evaporation. The metal foil 30 is then deposited with a metal material on the seed layer 40 by electroplating. And as Figure 3 shown, the substrate structure 100 is sequentially provided with an insulating substrate 10, a release layer 20, a seed layer 40, and a metal foil 30. The material of the seed layer 40 can be copper, titanium, nickel, chromium, and their alloys, or other materials with conductive properties. Therefore, through the conductive property of the seed layer 40 in the present application, during manufacturing, the metal foil 30 can be more easily and rapidly formed on the seed layer 40 by electroplating.

[0032] Please refer to Figure 4 As shown, in the fourth embodiment of the present application, the difference between the fourth embodiment and the third embodiment is that the release layer 20 of the fourth embodiment has an adhesive 22 and a body 23, so that the substrate structure 100 is sequentially provided with an insulating substrate 10, an adhesive 22, a body 23, a seed layer 40, and a metal foil 30. The materials, thicknesses, and manufacturing methods of the above structure are the same as those of the above embodiments, so they will not be elaborated here.

[0033] In this embodiment, the thickness of the seed layer 40 can be between 10 nanometers and 1 micrometer, for example: 10, 50, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950 nanometers, and 1 micrometer, etc.

[0034] Generally speaking, the present application has the following technical features:

[0035] 1. After the release layer 20 of the present application is separated from the metal foil 30, the surface of the metal foil 30 in contact with the smooth surface 21 has a relatively low surface roughness, which is conducive to transmitting high-frequency signals and thus reducing the loss during signal transmission.

[0036] 2. Due to the conductive property of the seed layer 40 in the present application, the metal foil 30 can be more easily formed on the seed layer 40 during manufacturing.

[0037] The above-mentioned technical effects do not prevent the existence of other technical effects. Technical effects that can be derived by those skilled in the art from the descriptions in the specification, claims, drawings, etc. are also included in the technical effects of the present application. Therefore, the technical effects of the present application are not limited to the above-listed technical effects.

[0038] The embodiments described above are only used to illustrate the present application and are not intended to limit the scope of the present application. Any modifications or changes made without departing from the creative spirit of the present application fall within the scope intended to be protected by the present application.

[0039] Reference Numerals

[0040] 100: Substrate Structure 10: Insulating Substrate

[0041] 20: Release Layer 21: Smooth Surface

[0042] 22: Adhesive 23: Body

[0043] 30: Metal Foil 40: Seed Layer.

Claims

1. A substrate structure with a high-frequency metal foil, characterized in that: The substrate structure comprises: Insulating substrate; A release layer is disposed on a surface of one side of the insulating substrate, wherein the release layer has a smooth surface on a side away from the insulating substrate; and A metal foil is formed on the smooth surface of the release layer.

2. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The invention also includes a seed layer, wherein the seed layer is located between the smooth surface and the metal foil.

3. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The invention also includes a seed layer, wherein the seed layer is located between the smooth surface and the metal foil.

4. The substrate structure with high-frequency metal foil according to claim 2, characterized in that: The seed layer is formed on the release layer in a method selected from chemical plating, sputtering and evaporation.

5. The substrate structure with high-frequency metal foil according to claim 2, characterized in that: The metal foil is formed on the seed layer by electroplating.

6. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The release layer comprises an adhesive and a body. The adhesive is arranged on a surface of one side of the insulating substrate, and the body is located on a side of the adhesive away from the insulating substrate.

7. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The thickness of the insulating substrate is between 2 micrometers and 500 micrometers.

8. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The thickness of the release layer is between 30 nanometers and 3 micrometers.

9. The substrate structure with high-frequency metal foil according to claim 1, characterized in that: The thickness of the metal foil is between 100 nanometers and 105 micrometers.

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