Multi-layer cooling deposition table of microwave plasma chemical vapor phase equipment

Abstract

The utility model relates to a multilayer cooling deposition table of microwave plasma chemical vapor deposition (MPCVD) equipment, and belongs to the related field of MPCVD equipment. The device comprises a copper carrying table, a microwave shielding ring, a cooling assembly, a guide disc, a supporting rod, a water inlet and a water outlet, a circular groove is formed in the center of the top of the copper carrying table, the microwave shielding ring is arranged in the circumferential direction of the copper carrying table, the cooling assembly is arranged below the copper carrying table, and a cooling channel of the cooling assembly is connected with the water inlet and the water outlet in the tail end of the supporting rod. A guide disc is arranged below the cooling assembly and provided with an air outlet channel connected with an air outlet in the tail end of the supporting rod. The deposition table is simple and reasonable in structural design, safe and reliable, more uniform in cooling effect and better in shielding effect, solves the problems of complex structure, poor cooling effect, microwave leakage and the like of the deposition table of the existing MPCVD equipment, and meets the use requirements.

Description

Technical Field

[0001] The utility model relates to a deposition stage, in particular to a multi-layer cooling deposition stage of a microwave plasma chemical vapor deposition device, and belongs to the related field of MPCVD devices. Background Art

[0002] MPCVD: the abbreviation of Microwave Plasma Chemical Vapor Deposition, which is translated as microwave plasma chemical vapor deposition in Chinese, and is a device used for batch growth of single-crystal and polycrystalline diamond; deposition stage: refers to the deposition stage used for microwave plasma chemical vapor deposition, and is used to carry diamond substrates.

[0003] The MPCVD (Microwave Plasma Chemical Vapor Deposition) method is one of the most promising methods for synthesizing high-quality diamond. The working principle of the MPCVD device is that the microwave generated by the microwave generator enters the reaction chamber of the reaction device through the waveguide transmission system, and a mixed gas such as methane and hydrogen is introduced into the reaction chamber. Under the excitation of the microwave, glow discharge is generated in the reaction chamber, the molecules of the reaction gas are ionized to generate plasma, and a diamond film is deposited on the substrate stage. The temperature uniformity of the substrate stage affects the growth of the diamond film. Uniform cooling of the substrate stage is beneficial to maintaining the temperature uniformity of the substrate stage, and thus a diamond film with good quality can be obtained. And the substrate stage is placed on the deposition stage, so the cooling design and gas supply design of the deposition stage are particularly important.

[0004] Currently, in terms of the deposition stage of the MPCVD device, there is no scheme similar to this application, but there are similar schemes for the deposition stage cooling device. For example, in a Chinese patent with a publication date of January 3, 2020 and a publication number of CN110645749A, an invention patent named "A Three-Layer Core Tube Water Cooling Device for MPCVD" is disclosed, which is different from the structure and the effects brought by this application.

[0005] In the prior art, the deposition stage of the MPCVD device not only has the function of carrying the substrate stage, but also has functions such as cooling function and gas flow channel function. Due to the limited internal space of the MPCVD, the size of the deposition stage itself is restricted, and the structures of the coolant inlet and outlet and the gas outlet are complex, which increases the manufacturing cost and is relatively difficult to install in the limited space. At the same time, uneven distribution of the cooling liquid causes uneven and insufficient heat exchange of the substrate stage for crystal growth, that is, uneven hot and cold distribution of the substrate stage, thus affecting the quality of crystal growth. In addition, the microwave above the deposition stage will leak along the gap between the deposition stage and the cavity, which will also cause certain heat loss and potential harm to the operator. Content of the Utility Model

[0006] The purpose of the present utility model is to overcome the above deficiencies existing in the prior art, and to provide a multi-layer cooling deposition table for a microwave plasma chemical vapor deposition device with a simple and reasonable structural design, safety and reliability, more uniform cooling effect, and better shielding effect.

[0007] The technical solution adopted by the present utility model to solve the above problems is: the multi-layer cooling deposition table of the microwave plasma chemical vapor deposition device includes a copper carrier table, and a circular groove is provided at the center of the top of the copper carrier table. It is characterized in that: it further includes a microwave shielding ring, a cooling component, a guiding disc, a support rod, a water inlet and a water outlet. The microwave shielding ring is arranged in the circumferential direction of the copper carrier table, and the cooling component is arranged below the copper carrier table. The cooling channels of the cooling component are connected to the water inlet and the water outlet at the end of the support rod. A guiding disc is arranged below the cooling component, and the guiding disc is provided with an air outlet channel connected to the air outlet at the end of the support rod.

[0008] Preferably, the copper carrier table of the present utility model includes a water-cooling cavity, a mounting hole one and a ventilation hole. A water-cooling cavity with a certain depth is provided at the center of the bottom of the copper carrier table, and a plurality of mounting holes one and a plurality of ventilation holes are evenly distributed in the circumference of the copper carrier table.

[0009] Preferably, the microwave shielding ring of the present utility model includes elastic shielding teeth and a fixing piece. A plurality of elastic shielding teeth are distributed on the outer circle of the microwave shielding ring, and a fixing piece is arranged on the inner side of the microwave shielding ring and fixed to the copper carrier table.

[0010] Preferably, the cooling component of the present utility model includes a water-cooling disc, an annular cavity, a cooling shunt plate, a lower O-ring, an upper O-ring, a fixing plate, a mounting hole two and a uniform air hole one. The center of the water-cooling disc is a through hole, and a support pipeline is installed inside. The upper end surface of the water-cooling disc is matched with the upper O-ring and then sealed with the copper carrier table to form an annular cavity. The lower end surface of the water-cooling disc is matched with the lower O-ring and then sealed with the fixing plate to prevent the leakage of cooling water; a cooling shunt plate is installed inside the annular cavity, and the cooling shunt plate is a thin plate with a circular center and a hole; a plurality of mounting holes two and a plurality of uniform air holes one corresponding to the ventilation holes on the copper carrier table are evenly distributed in the circumference of the water-cooling disc.

[0011] Preferably, the guiding disc of the present utility model includes an inclined outer circle, a mounting hole three, a ventilation groove and a uniform air hole two. The upper half of the outer circle of the guiding disc is provided with an inclined outer circle in a certain inclined form. A plurality of mounting holes three are arranged at the edge of the guiding disc and a plurality of ventilation grooves are distributed in the circumference. A uniform air hole two is arranged at the center of the guiding disc.

[0012] Preferably, the copper material of the copper carrier table of the present utility model is selected as oxygen-free copper, the microwave shielding ring is made of beryllium copper material, and the material of the guiding disc is selected as a non-metallic material.

[0013] Compared with the prior art, the utility model has the following advantages and effects: The overall structure is designed simply and reasonably, safe and reliable, with more uniform cooling effect and better shielding effect; it solves the problems of complex structure, poor cooling effect, microwave leakage, etc. of the existing deposition stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall structure of an embodiment of the utility model.

[0015] Figure 2 It is a schematic diagram of the structure of the copper carrier stage in an embodiment of the utility model.

[0016] Figure 3 It is a schematic diagram of the structure of the water cooling cavity in the copper carrier stage of an embodiment of the utility model.

[0017] Figure 4 It is a schematic diagram of the structure of the microwave shielding ring in an embodiment of the utility model.

[0018] Figure 5 It is a schematic diagram of the structure of the cooling component and other components in an embodiment of the utility model.

[0019] Figure 6 It is a schematic diagram of the structure of the water cooling plate with mounting holes II and air distribution holes I in an embodiment of the utility model.

[0020] Figure 7 It is a schematic diagram of the structure of the guide plate with an inclined outer circle in an embodiment of the utility model.

[0021] Figure 8 It is a schematic diagram of the structure of the guide plate in an embodiment of the utility model.

[0022] In the figure: copper carrier stage 1, microwave shielding ring 2, cooling component 3, guide plate 4, support rod 5, water outlet 6, water inlet 7; circular groove 11, water cooling cavity 12, mounting hole I 13, ventilation hole 14; elastic shielding teeth 21, fixing piece 22; water cooling plate 31, annular cavity 32, cooling diversion plate 33, lower O-ring 34, upper O-ring 35, fixing plate 36, mounting hole II 37, air distribution hole I 38; inclined outer circle 41, mounting hole III 42, ventilation groove 43, air distribution hole II 44, inclination angle A. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0023] The following further details the utility model with reference to the drawings and through embodiments. The following embodiments are explanations of the utility model and the utility model is not limited to the following embodiments.

[0024] Embodiment

[0025] See Figures 1 to 8, the multi-layer cooling deposition stage of the microwave plasma chemical vapor deposition equipment in this embodiment includes a copper carrier stage 1, a microwave shielding ring 2, a cooling component 3, a guiding disk 4, a support rod 5, a water outlet 6, and a water inlet 7. A circular groove 11 is provided at the center of the copper carrier stage 1; the microwave shielding ring 2 is arranged in the circumferential direction of the copper carrier stage 1; the cooling component 3 is arranged below the copper carrier stage 1, and the cooling channels therein are connected to the water inlet 7 and the water outlet 6 at the end of the support rod 5; a guiding disk 4 is arranged below the cooling component 3, and the guiding disk 4 is provided with an air outlet channel connected to the air outlet at the end of the support rod 5.

[0026] In this embodiment, the copper material of the copper carrier stage 1 is selected as oxygen-free copper. A circular groove 11 is provided at the center of the top for heat exchange; a water-cooling cavity 12 with a certain depth is designed at the center of the bottom; a number of mounting holes 13 are distributed circumferentially for fastening with other components; a number of ventilation holes 14 are evenly distributed circumferentially. The process gas above the copper carrier stage 1 is evenly dispersed below the copper carrier stage 1 through the ventilation holes 14.

[0027] In this embodiment, the microwave shielding ring 2 is made of beryllium copper. A number of elastic shielding teeth 21 are distributed on the outer circle. During the operation of the equipment, the elastic shielding teeth 21 can ensure full contact with the inner wall of the cavity, effectively avoiding microwave leakage; the fixing piece 22 on the inner side of the shielding ring is fixed to the copper carrier stage 1, and the fixing method can be but is not limited to screw fixing, adhesive pasting, etc.

[0028] In this embodiment, the cooling component 3 includes a water-cooling disk 31. The center of the water-cooling disk 31 is a through hole, and a support pipeline is installed inside for the inlet and outlet of cooling water. The upper end face of the water-cooling disk 31 is matched with the upper O-ring 35 and then sealed with the copper carrier stage 1 to form an annular cavity 32. The lower end face of the water-cooling disk is matched with the lower O-ring 34 and then sealed with the fixing plate 36 to prevent cooling water leakage. In addition, a cooling flow-dividing plate 33 is installed inside the annular cavity 32. The cooling flow-dividing plate 33 is a thin plate with a circular center hole. The structure is simple and can effectively diffuse the cooling water in the annular cavity 32 evenly, enabling the entire deposition stage to be fully cooled. A number of mounting holes 37 are distributed circumferentially on the water-cooling disk 31 for fastening with other components; a number of air distribution holes 38 are evenly distributed circumferentially, connecting the ventilation holes 14 on the copper carrier stage 1 for uniform gas passage to reach below the cooling component.

[0029] In this embodiment, the material of the guiding disk 4 is selected as a non-metallic material, which can be, but is not limited to, polytetrafluoroethylene. The upper half of the outer circle is provided with an inclined outer circle 41 with a certain inclination angle. The inclination angle A is 2.29°, forming a guide to reduce the resistance between the deposition stage moving up and down and the mating cavity. A number of mounting holes III 42 are provided at the edge of the guiding disk 4, and it is fixed on the cooling component 3 by screws to ensure that its coaxiality is within the allowable range. In addition, a number of ventilation grooves 43 are distributed on the circumference. The gas flows from the copper carrier stage 1 of the deposition stage to the cooling component 3 and then through the ventilation grooves 43 to reach the internal cavity of the guiding disk 4 and flows out from the uniform air holes II 44 at the center of the guiding disk 4.

[0030] The support rod 5 in this embodiment is designed as a double-layer cylindrical wall structure. The lower end of the outer cavity is connected to the water inlet 7. After the cooling water enters from the water inlet 7, it flows upward through the annular hollow cavity under a certain water pressure to the cooling component 3. After reaching the top, it then flows downward along the central circular through-hole of the cooling diversion plate 33 to the central through-hole of the support rod 5. The lower end of the through-hole is connected to the water outlet 6. The entire cooling cycle only requires two standard water interfaces during installation, which is simple and effective.

[0031] The multi-layer cooling deposition stage of the microwave plasma chemical vapor deposition device in this embodiment solves the problems of complex structure of the deposition stage, poor cooling effect, and microwave leakage in the existing MPCVD device.

[0032] Through the above description, those skilled in the art can already implement it.

[0033] In addition, it should be noted that for the specific embodiments described in this specification, the shapes and names of their parts and components can be different. The above content described in this specification is only an example of the structure of the present invention. Any equivalent changes or simple changes made according to the structure, features, and principles of the present invention patent concept are included in the protection scope of the present invention patent. Those skilled in the technical field to which the present invention belongs can make various modifications or supplements to the described specific embodiments or use similar methods for substitution, as long as they do not deviate from the structure of the present invention or exceed the scope defined by this claim book, they should belong to the protection scope of the present invention.

Claims

1. A multilayer cooling deposition platform for a microwave plasma chemical vapor phase device, comprising a copper carrier (1), wherein a circular groove (11) is arranged at the center of the top of the copper carrier (1), characterized in that: It also comprises a microwave shielding ring (2), a cooling assembly (3), a guide plate (4), a support rod (5), a water outlet (6) and a water inlet (7); the microwave shielding ring (2) is arranged in the circumferential direction of the copper carrier (1); a cooling assembly (3) is arranged below the copper carrier (1); a cooling channel of the cooling assembly (3) is connected to the water inlet (7) and the water outlet (6) at the end of the support rod (5); a guide plate (4) is arranged below the cooling assembly (3); and an air outlet channel is arranged on the guide plate (4) and is connected to the air outlet at the end of the support rod (5).

2. The multi-layer cooling deposition platform of the microwave plasma chemical vapor equipment according to claim 1, characterized in that: The copper carrier (1) comprises a water cooling cavity (12), a mounting hole (13) and a vent hole (14); a water cooling cavity (12) of a certain depth is arranged at the bottom center of the copper carrier (1); a plurality of mounting holes (13) and a plurality of vent holes (14) are evenly distributed around the circumference of the copper carrier (1).

3. The multi-layer cooling deposition platform of the microwave plasma chemical vapor equipment according to claim 1, characterized in that: The microwave shielding ring (2) comprises elastic shielding teeth (21) and a fixing plate (22); a plurality of elastic shielding teeth (21) are distributed on the outer circumference of the microwave shielding ring (2); and a fixing plate (22) is provided on the inner side of the microwave shielding ring (2) to be fixed to the copper carrier (1).

4. The multi-layer cooling deposition platform of the microwave plasma chemical vapor equipment according to claim 1, characterized in that: The cooling assembly (3) comprises a water cooling plate (31), an annular cavity (32), a cooling flow divider plate (33), a lower O-ring (34), an upper O-ring (35), a fixing plate (36), a second mounting hole (37) and a first air-distributing hole (38). The center of the water cooling plate (31) is a through hole, and a supporting pipeline is installed inside. The upper end surface of the water cooling plate (31) cooperates with the upper O-ring (35) to seal with the copper carrier (1) to form an annular cavity (32). The lower end surface of the water cooling plate (31) cooperates with the lower O-ring (34) to seal with the fixing plate (36) to prevent cooling water leakage. The annular cavity (32) is provided with a cooling flow divider plate (33), and the cooling flow divider plate (33) is configured as a circular thin plate with a hole in the center. The water cooling plate (31) has a plurality of second mounting holes (37) distributed circumferentially and a plurality of first air-distributing holes (38) evenly distributed and corresponding to the air holes (14) on the copper carrier (1).

5. The multi-layer cooling deposition platform of the microwave plasma chemical vapor equipment according to claim 1, characterized in that: The guide plate (4) comprises an outer circle with an inclination angle (41), a third mounting hole (42), a venting groove (43) and a second air-distributing hole (44); the upper half of the outer circle of the guide plate (4) is provided with an outer circle with an inclination angle (41) in a certain inclination form; a plurality of third mounting holes (42) and a plurality of venting grooves (43) are arranged on the edge of the guide plate (4); and a second air-distributing hole (44) is arranged at the center of the guide plate.

6. The multi-layer cooling deposition platform of the microwave plasma chemical vapor equipment according to claim 1, characterized in that: The copper material of the copper carrier (1) is oxygen-free copper, the microwave shielding ring (2) is made of beryllium copper, and the material of the guide plate (4) is made of non-metallic material.

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