Novel multi-cavity diamond growing and doping equipment

Abstract

The utility model relates to novel multi-cavity diamond growing and doping equipment, and belongs to the field of diamond equipment. The device comprises a transfer cavity, an intrinsic reaction cavity, an N-type doping cavity, a P-type doping cavity, a feeding cavity, a high-vacuum gate valve and an automatic control system, the transfer cavity is connected with the intrinsic reaction cavity, the N-type doping cavity, the P-type doping cavity and the feeding cavity through the gate valves, and vacuum isolation and vacuum interconnection between different cavities are achieved; the intrinsic reaction cavity, the N-type doping cavity, the P-type doping cavity and the feeding cavity are all connected with an automatic control system; a mechanical arm is mounted in the transfer cavity; the tail end of the mechanical arm is provided with a mechanical claw used for sampling and sample feeding, and transferring of materials between different cavities is achieved. The device is reasonable in structural design, safe and reliable, adopts a mode of a plurality of reaction cavities and a middle transfer cavity, realizes homogeneous and heterostructure growth of a diamond material, realizes transfer of the material without being exposed in an atmospheric environment, and meets use requirements.

Description

Technical Field

[0001] The utility model relates to a device, in particular to a novel multi-chamber diamond growth and doping device, which is used for a microwave plasma chemical vapor deposition device for diamond growth and doping, and belongs to the field of diamond devices. Background Technique

[0002] The term explanations are as follows: (1) MPCVD: the abbreviation of Microwave Plasma Chemical Vapor Deposition, which is translated as microwave plasma chemical vapor deposition in Chinese, and is a device used to grow single crystal and polycrystalline diamond in batches; (2) diamond N-type doping: refers to the process of doping different impurities (such as sulfur doping or boron-sulfur impurity pair doping) into diamond by using microwave plasma chemical vapor deposition technology to prepare N-type doped diamond thin films; (3) diamond P-type doping: refers to the process of doping impurities (such as boron doping) on the intrinsic layer of diamond by using microwave plasma chemical vapor deposition technology to prepare P-type doped diamond thin films; (4) multi-chamber: specifically refers to several microwave plasma reaction chambers in the device, including the intrinsic reaction chamber, N-type doping chamber, P-type doping chamber, etc., and does not include auxiliary chambers such as the feeding chamber and the transfer chamber.

[0003] Diamond is a special functional material with excellent thermal, mechanical, optical and electrical properties, and has a very broad application prospect. Due to the harsh formation conditions and scarce output of natural diamond, and with the continuous development of society, the demand for diamond is increasing, which has spawned various artificial diamond devices. At present, the main methods for preparing diamond are the high temperature and high pressure method (HPHT) and the plasma chemical vapor deposition method (MPCVD). MPCVD has more obvious advantages in the preparation of large-size and high-purity diamond, and is the preferred method for the preparation of diamond with high quality and multi-field applications.

[0004] In addition, doped diamond can obtain more excellent physical and mechanical properties than ordinary diamond, especially more excellent electrical properties after doping. As a semiconductor material, diamond has P-type doping and N-type doping, and can synthesize P-type and N-type conductive materials. In order to complete the intrinsic growth of diamond and its N-type doping, P-type doping and other growths in the same device, our company has developed a multi-chamber diamond thin film epitaxial growth device in the "multi-chamber plus transfer chamber" mode, which can realize the transfer of diamond from the intrinsic growth chamber to the N-type doping chamber or the P-type doping chamber in a pure argon environment.

[0005] At present, there is no solution similar to the present utility model in terms of MPCVD equipment. However, similar solutions that adopt an intermediate transfer chamber include a vacuum processing system (application number 202211318184.7), a sample transfer device and an ultra-high vacuum measurement system (application number 201710794397.X), a combined thin film preparation and in-situ characterization system (application number 201510446068.7), etc. Through comparison, it can be seen that they are obviously different from the equipment of the present application.

[0006] In the development of MPCVD equipment, relatively in-depth and systematic research has been carried out on various resonant cavity structures of MPCVD, and the research on P-type doping equipment has also tended to be mature. However, further research is still needed for realizing N-type doping equipment. Therefore, key technologies such as the independent optimization design of microwave plasma resonant cavities, the improvement of diamond preparation processes, and diamond doping technologies need to be urgently broken through.

[0007] Currently, diamond growth mainly relies on single-chamber equipment. When N-type doping or P-type doping is required, the diamond substrate needs to be manually placed into the doping equipment. There is no equipment at home and abroad that can automatically realize the free switching between intrinsic growth and N-type doping or P-type doping through an intermediate transfer chamber without manual transfer. Summary of the Utility Model

[0008] The purpose of the present utility model is to overcome the above-mentioned deficiencies existing in the prior art, and to provide a new multi-chamber diamond growth and doping equipment with a reasonable structural design, safe and reliable, which adopts a method of multiple reaction chambers plus an intermediate transfer chamber to realize the growth of homogeneous and heterogeneous structures of diamond materials while realizing the transfer of materials without being exposed to the atmospheric environment.

[0009] The technical solution adopted by the present utility model to solve the above problems is: the new multi-chamber diamond growth and doping equipment includes an automatic control system, and is characterized in that: it further includes an intermediate transfer chamber, an intrinsic reaction chamber, an N-type doping chamber, a P-type doping chamber, a feeding chamber and high-vacuum valves. The intermediate transfer chamber is connected to the intrinsic reaction chamber, the N-type doping chamber, the P-type doping chamber and the feeding chamber by valves to realize vacuum isolation and vacuum interconnection between different chambers; the intrinsic reaction chamber, the N-type doping chamber, the P-type doping chamber and the feeding chamber are all connected to the automatic control system; the intermediate transfer chamber includes an observation window, a chamber cover bracket, a chamber cover, a robotic arm and a robotic gripper. Among the six sides of the intermediate transfer chamber, five sides are provided with through holes. Four of the sides are all connected to high-vacuum valves, and the four high-vacuum valves are respectively connected to the intrinsic reaction chamber, the N-type doping chamber, the P-type doping chamber and the feeding chamber. The fifth side is connected to the observation window through a high-vacuum valve, and the sixth side is provided with a chamber cover bracket. The chamber cover bracket is fixed on the hexagonal side of the intermediate transfer chamber, and the other end is connected to the chamber cover; a robotic arm is installed inside the intermediate transfer chamber; a robotic gripper for sampling and sample delivery is installed at the end of the robotic arm to realize the transfer of materials between different chambers.

[0010] Preferably, the intrinsic reaction chamber of the present utility model includes a microwave resonance chamber, a microwave transmission system, a gas path and pressure control system, a vacuum and measurement system, and a cooling system. The intrinsic reaction chamber is a device for carrying out the intrinsic reaction of diamond. The operation of the microwave transmission system, the gas path and pressure control system, the vacuum and measurement system, and the cooling system is controlled by an automatic control system. In the gas path and pressure control system, several gas inlets are provided in the gas inlet system, and the gases are mixed and then enter the microwave resonance chamber.

[0011] Preferably, the feeding chamber of the present utility model supplies materials to the intrinsic reaction chamber, the N-type doping chamber, and the P-type doping chamber. The on-off with the transfer chamber is controlled by a high-vacuum valve. The robotic arm at the center of the transfer chamber can drive the robotic claw to grab and transfer the material table.

[0012] Preferably, the transfer chamber of the present utility model is in the form of a multi-interface transfer bin, with a regular polygon on the outside and a circular inner cavity.

[0013] Preferably, the transfer chamber of the present utility model is a hexagonal transfer chamber.

[0014] Preferably, the material of the transfer chamber of the present utility model is aluminum or stainless steel.

[0015] Compared with the prior art, the present utility model has the following advantages and effects: (1) The overall structure is reasonably designed. The growth of homogeneous and heterogeneous structures of diamond materials is carried out by using multiple reaction chambers (multiple chambers refer to three chambers, but are not limited to three chambers) plus an intermediate transfer chamber; (2) While realizing the growth of homogeneous and heterogeneous structures of diamond materials, the transfer of materials without exposure to the atmospheric environment is realized, such as a vacuum environment or an argon environment. Description of the Drawings

[0016] Figure 1 It is a schematic diagram of the overall structure of an embodiment of the present utility model.

[0017] Figure 2 It is a schematic diagram of the structure of the hexagonal transfer chamber in an embodiment of the present utility model.

[0018] Figure 3 It is a schematic diagram of the positional structure of the robotic arm and the robotic claw in the hexagonal transfer chamber of an embodiment of the present utility model.

[0019] Figure 4 It is a schematic diagram of the structure of the intrinsic reaction chamber in an embodiment of the present utility model.

[0020] In the figure: transfer chamber 1, intrinsic reaction chamber 2, N-type doping chamber 3, P-type doping chamber 4, feeding chamber 5, high-vacuum valve 6, automatic control system 7; observation window 11, chamber cover support 12, chamber cover 13, robotic arm 14, robotic gripper 15; microwave resonance chamber 21, microwave transmission system 22, gas path and pressure control system 23, vacuum and measurement system 24, cooling system 25. Detailed implementation mode

[0021] The present utility model will be further described in detail below with reference to the accompanying drawings and through embodiments. The following embodiments are explanations of the present utility model, and the present utility model is not limited to the following embodiments.

[0022] Embodiment

[0023] See Figures 1 to 4 , the novel multi-chamber diamond growth and doping equipment in this embodiment includes a transfer chamber 1, an intrinsic reaction chamber 2, an N-type doping chamber 3, a P-type doping chamber 4, a feeding chamber 5, a high-vacuum valve 6, and an automatic control system 7; the transfer chamber 1 is connected to the intrinsic reaction chamber 2, the N-type doping chamber 3, the P-type doping chamber 4, and the feeding chamber 5 through valves to achieve vacuum isolation and vacuum interconnection between different chambers; a robotic arm 14 is installed inside the transfer chamber 1; a robotic gripper 15 for sampling and sample delivery is installed at the end of the robotic arm 14; to achieve the transfer of materials between different chambers.

[0024] The transfer chamber 1 in this embodiment is a hexagonal transfer chamber, designed in the form of a multi-interface transfer bin, with a regular polygon on the outside and a circular inner cavity. The material used is not limited to aluminum or stainless steel, and the surface treatment is not limited to oxidation or electrolytic polishing.

[0025] The transfer chamber 1 in this embodiment includes an observation window 11, a chamber cover support 12, a chamber cover 13, a robotic arm 14, and a robotic gripper 15; among the six sides of the transfer chamber 1, five sides are provided with through holes, and four of the sides are connected to high-vacuum valves 6; the four high-vacuum valves 6 are respectively connected to the intrinsic reaction chamber 2, the N-type doping chamber 3, the P-type doping chamber 4, and the feeding chamber 5; the fifth side is connected to the observation window 11 through a high-vacuum valve 6; the sixth side is provided with a chamber cover support 12, and the chamber cover support 12 is fixed on the side of the hexagonal transfer chamber 1 and the other end is connected to the chamber cover 13 to achieve the sealing of the transfer chamber 1.

[0026] In this embodiment, the intrinsic reaction chamber 2 is a device for diamond intrinsic reaction, mainly including a microwave resonant chamber 21, a microwave transmission system 22, a gas path and pressure control system 23, a vacuum and measurement system 24, and a cooling system 25. The intrinsic reaction chamber 2 is connected to an automatic control system 7, and the operation of the other systems is controlled by the automatic control system 7. In the gas path and pressure control system 23, several gas inlets are provided in the gas inlet system, and the gases are mixed and then enter the microwave resonant chamber 21. Since the process gases used for intrinsic growth and doping growth are different, the gas path and pressure control system 23 can provide process gases of different types and pressures according to requirements.

[0027] In this embodiment, the N-type doping chamber 3 is a device for diamond N-type doping growth. Its main structure includes a microwave transmission system 22, a gas path and pressure control system 23, a vacuum and measurement system 24, a cooling system 25, etc. Its basic structure is the same as that of the intrinsic reaction chamber 2, but the direction of the microwave transmission system 22 is adjusted. In addition, the process gas in its gas path and pressure control system 23 can be adjusted according to the actually doped impurities, such as hydrogen but not limited to hydrogen. In addition, the N-type doping chamber 3 is connected to the automatic control system 7, and the operation of the other systems is controlled by the automatic control system 7.

[0028] In this embodiment, the P-type doping chamber 4 is a device for diamond P-type doping growth. Its main structure includes a microwave transmission system 22, a gas path and pressure control system 23, a vacuum and measurement system 24, a cooling system 25, etc. Its basic structure is the same as that of the intrinsic reaction chamber 2, but the direction of the microwave transmission system 22 is adjusted. In addition, the process gas in its gas path and pressure control system 23 can be adjusted according to the actually doped impurities, such as but not limited to hydrogen, oxygen, etc. In addition, the P-type doping chamber 4 is connected to the automatic control system 7, and the operation of the other systems is controlled by the automatic control system 7.

[0029] In this embodiment, the feeding chamber 5 can provide materials for the intrinsic reaction chamber 2, the N-type doping chamber 3, and the P-type doping chamber 4. The connection with the transfer chamber 1 is controlled by a high-vacuum valve 6. The manipulator 14 at the center of the transfer chamber 1 can drive the mechanical claw 15 to grab and transfer the material platform. The feeding chamber 5 is connected to the automatic control system 7, and the automatic control system 7 controls the realization of various functions such as opening, closing, and vacuum pumping of the feeding chamber 5.

[0030] In this embodiment, the high-vacuum valve 6 is used to control the connection and disconnection between the transfer chamber 1 and the other chambers, and the automatic control system 7 controls the connection and disconnection nodes and time thereof. When taking materials, after the transfer chamber 1 and the feeding chamber 5 are both in a vacuum or pure argon state, the high-vacuum valve 6 between the transfer chamber 1 and the feeding chamber 5 automatically opens. At this time, the mechanical gripper 15 can reach into the feeding chamber 5 to grab materials driven by the robotic arm 14. After retrieving the materials, the high-vacuum valve 6 automatically closes, disconnecting the connection between the transfer chamber 1 and the feeding chamber 5. At this time, the feeding chamber 5 can be opened to continue discharging materials without affecting the environmental state of the transfer chamber 1. The high-vacuum valve 6 is respectively connected to the automatic control system 7, and the automatic control system 7 controls the opening and closing of the high-vacuum valve 6, thereby controlling the working sequence of the entire device and the connection and isolation between each chamber.

[0031] The automatic control system 7 in this embodiment is not a new software program, and those skilled in the art are aware that it only needs to implement the control functions in this application.

[0032] This embodiment is used for the growth of diamond material homogeneous and heterogeneous structures, and can realize the automatic transfer of materials without being exposed to the atmospheric environment.

[0033] Through the above description, those skilled in the art can already implement it.

[0034] In addition, it should be noted that for the specific embodiments described in this specification, the shapes, names of parts and components, etc. can be different. The above content described in this specification is only an example of the structure of the present invention. Any equivalent changes or simple changes made according to the structure, features and principles described in the inventive concept of the present invention are included in the protection scope of the patent of the present invention. Those skilled in the technical field to which the present invention belongs can make various modifications or supplements to the described specific embodiments or use similar methods for substitution, as long as they do not deviate from the structure of the present invention or exceed the scope defined by the claims of the present invention, they should all belong to the protection scope of the present invention.

Claims

1. A novel multi-chamber diamond growth and doping apparatus, comprising an automatic control system (7), characterized in that: The invention also comprises a transfer chamber (1), an intrinsic reaction chamber (2), an N-type doping chamber (3), a P-type doping chamber (4), a feed chamber (5) and a high vacuum gate valve (6); the transfer chamber (1) is connected to the intrinsic reaction chamber (2), the N-type doping chamber (3), the P-type doping chamber (4) and the feed chamber (5) by a gate valve, so as to achieve vacuum isolation and vacuum interconnection between different chambers; the intrinsic reaction chamber (2), the N-type doping chamber (3), the P-type doping chamber (4) and the feed chamber (5) are all connected to an automatic control system (7); the transfer chamber (1) comprises an observation window (11), a chamber cover bracket (12), a chamber cover (13), a mechanical arm (14) and a mechanical claw (15); the transfer chamber (1) comprises an observation window (11), a chamber cover bracket (12), a chamber cover (13), a mechanical arm (14) and a mechanical claw (15); Among the six sides of the chamber (1), five sides are provided with through holes, four of which are connected to high vacuum gate valves (6), the four high vacuum gate valves (6) are respectively connected to the intrinsic reaction chamber (2), the N-type doping chamber (3), the P-type doping chamber (4) and the feed chamber (5), the fifth side is connected to the observation window (11) through the high vacuum gate valve (6), the sixth side is provided with a chamber cover bracket (12), the chamber cover bracket (12) is fixed to the side of the hexagonal transfer chamber (1), and the other end is connected to the chamber cover (13); a mechanical arm (14) is installed inside the transfer chamber (1); a mechanical claw (15) for sampling and delivering samples is installed at the end of the mechanical arm (14) to realize the transfer of materials between different chambers.

2. The novel multi-chamber diamond growth and doping equipment according to claim 1, characterized in that: The intrinsic reaction chamber (2) comprises a microwave resonant chamber (21), a microwave transmission system (22), a gas path and pressure control system (23), a vacuum and measurement system (24), and a cooling system (25). The intrinsic reaction chamber (2) is a device for performing a diamond intrinsic reaction. The intrinsic reaction chamber (2) controls the operation of the microwave transmission system (22), the gas path and pressure control system (23), the vacuum and measurement system (24), and the cooling system (25) through an automatic control system (7). In the gas path and pressure control system (23), a plurality of gas inlets are arranged in the gas inlet system, and the gas enters the microwave resonant chamber (21) after mixing.

3. The novel multi-chamber diamond growth and doping equipment according to claim 1, characterized in that: The feed chamber (5) provides materials for the intrinsic reaction chamber (2), the N-type doping chamber (3), and the P-type doping chamber (4), and is connected and disconnected with the transfer chamber (1) by means of a high vacuum gate valve (6). The mechanical arm (14) at the center of the transfer chamber (1) can drive the mechanical claw (15) to grab and transfer the material platform.

4. The novel multi-chamber diamond growth and doping equipment according to claim 1, characterized in that: The transfer chamber (1) is a multi-interface transfer chamber, the outer shape is a regular polygon, and the inner cavity is a circle.

5. The novel multi-chamber diamond growth and doping equipment according to claim 4, characterized in that: The transfer chamber (1) is a hexagonal transfer chamber (1).

6. The novel multi-chamber diamond growth and doping equipment according to claim 5, characterized in that: The transfer chamber (1) is made of aluminum or stainless steel.

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