Vertical single-cavity silicon carbide epitaxy system

Abstract

The utility model relates to a vertical single-cavity silicon carbide epitaxy system and belongs to the field of silicon carbide epitaxy. The device comprises a main machine cabinet, a special gas cabinet, a heating cabinet, a power cabinet, a cooling water cabinet, a control panel, a cooling cavity, a feeding cavity, a transfer cavity and a reaction cavity, the main machine cabinet, the special gas cabinet, the heating cabinet and the power cabinet are arranged from front to back, the cooling water cabinet is arranged on the left side of the main machine cabinet, and the reaction cavity, the transfer cavity, the cooling cavity and the feeding cavity are arranged in the main machine cabinet. The reaction cavity, the cooling cavity and the feeding cavity are arranged with the transfer cavity as the center to form a core cavity, and a control panel used for operating equipment is arranged right in front of the main machine cabinet. The system is reasonable in design, safe and reliable, low in hardware and consumable cost, long in maintenance period and good in process quality, and meets the use requirements.

Description

Technical Field

[0001] The utility model relates to a system, in particular to a vertical single-chamber silicon carbide epitaxial system, which is used in the silicon carbide substrate epitaxial process and belongs to the field of silicon carbide epitaxy. Background Technique

[0002] Silicon carbide is a typical third-generation semiconductor material, with characteristics such as a large bandgap width, a high critical field strength, a high thermal conductivity, a high carrier saturation rate, and strong radiation resistance. It has become an important semiconductor material for manufacturing high-power devices, high-frequency devices, high-temperature devices, and radiation-resistant devices, and is also recognized as the best semiconductor material that will lead the development of power electronics, especially high-power power electronics.

[0003] The fabrication of silicon carbide power devices is mainly carried out on a silicon carbide thin film supported by a silicon carbide single crystal substrate. One reason is that the growth temperature of silicon carbide wafers is relatively high, resulting in a relatively high impurity content and serious unintentional doping. Compared with thin films, their electrical properties are not good enough to meet the requirements of device fabrication. The other reason is that diffusion doping requires too high a temperature for silicon carbide, which is too difficult, and the effect of directly performing ion implantation doping on silicon carbide wafers is far less good than that obtained on epitaxial wafers.

[0004] Therefore, silicon carbide epitaxy is one of the key processes in the production process of silicon carbide power devices. Correspondingly, the silicon carbide epitaxial system is an important piece of equipment in the silicon carbide industry.

[0005] In the currently common horizontal single-chamber silicon carbide epitaxial system, the silicon carbide substrate is manually loaded and unloaded between the equipment and the outside world. Its advantage is that the equipment is simple, but it has a small production capacity, many impurity particles, and a short maintenance cycle. The common vertical double-chamber silicon carbide epitaxial system can perform fully automatic loading and unloading, with good product uniformity, few impurity particles, high production capacity, and a long maintenance cycle, but the overall structure of the system is complex, and the hardware and consumable costs are high. Against this background, the utility model combines the advantages of both to provide a vertical single-chamber silicon carbide epitaxial system. Content of the Utility Model

[0006] The purpose of the utility model is to overcome the above-mentioned deficiencies existing in the prior art, and to provide a vertical single-chamber silicon carbide epitaxial system with a reasonable structural design, safety and reliability, low hardware, low consumable costs, and a long maintenance cycle.

[0007] The vertical single-chamber silicon carbide epitaxial system of the utility model includes a main cabinet, a special gas cabinet, a heating cabinet, a power cabinet, a cooling water cabinet, a cooling chamber, a feeding chamber, a control panel, a transfer chamber, and a reaction chamber. The main cabinet, the special gas cabinet, the heating cabinet, and the power cabinet are arranged from front to back. The cooling water cabinet is arranged on the left side of the main cabinet. The reaction chamber, the transfer chamber, the cooling chamber, and the feeding chamber are arranged inside the main cabinet. The control panel is arranged directly in front of the main cabinet.

[0008] Preferably, the present utility model further includes a vacuum manipulator, and the vacuum manipulator is installed in the transfer chamber; it is used to realize the transfer of silicon carbide substrates between different chambers.

[0009] Preferably, the present utility model further includes universal wheels, and the main cabinet, the special gas cabinet, the heating cabinet and the power cabinet are all installed with universal wheels; it is convenient to adjust the position during system layout, and at the same time, each cabinet is relatively independent, which is convenient for maintenance.

[0010] Preferably, the cooling water cabinet of the present utility model is provided with water cooling pipes and is connected to the reaction chamber through the cooling water pipes.

[0011] Preferably, the reaction chamber of the present utility model adopts a vertical gas inlet mode.

[0012] Compared with the prior art, the present utility model has the following advantages and effects: (1) The overall structure is reasonably designed, safe and reliable, with good process quality, significantly reducing the hardware cost and floor area of the vertical silicon carbide epitaxial system, retaining the advantage of the long maintenance cycle of the vertical silicon carbide epitaxial reaction chamber, and at the same time retaining the advantages of good uniformity of the silicon carbide epitaxial layer produced by the vertical gas inlet process, few impurity particles, and stable process between furnaces; (2) Except for the reaction chamber, other chambers of the horizontal single-chamber silicon carbide epitaxial system are retained, with low component complexity, and the operation process is similar to that of the horizontal single-chamber silicon carbide epitaxial system, enabling rapid production. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is an overall left isometric view of the vertical silicon carbide system according to an embodiment of the present utility model.

[0014] Figure 2 It is a left isometric view of the main cabinet of the vertical silicon carbide system according to an embodiment of the present utility model after removing the sheet metal door panel.

[0015] Figure 3 It is a left isometric view of the core chamber of the main cabinet of the vertical silicon carbide system according to an embodiment of the present utility model.

[0016] In the figure: main cabinet 1, special gas cabinet 2, heating cabinet 3, power cabinet 4, cooling water cabinet 5, cooling chamber 6, feeding chamber 7, control panel 8, transfer chamber 9, reaction chamber 10, vacuum manipulator 11. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] The present utility model will be further described in detail below with reference to the drawings and through embodiments. The following embodiments are explanations of the present utility model and the present utility model is not limited to the following embodiments.

[0018] Embodiment

[0019] SeeFigures 1 to 3 , in this embodiment, the vertical single-chamber silicon carbide epitaxial system includes a main cabinet 1, a special gas cabinet 2, a heating cabinet 3, a power cabinet 4 and a cooling water cabinet 5, a total of 5 cabinets; among them, the main cabinet 1, the special gas cabinet 2, the heating cabinet 3 and the power cabinet 4 are arranged from front to back, and the cooling water cabinet 5 is arranged on the left side of the main cabinet 1; inside the main cabinet 1, there are arranged 4 core chambers for realizing the silicon carbide epitaxial process, namely a reaction chamber 10, a transfer chamber 9, a cooling chamber 6 and a feeding chamber 7, and their related accessory components.

[0020] In this embodiment, the main cabinet 1, the special gas cabinet 2, the heating cabinet 3 and the power cabinet 4 are all installed with universal wheels, which is convenient for position adjustment during system layout. At the same time, each cabinet is relatively independent, which is convenient for maintenance;

[0021] In this embodiment, a control panel 8 is arranged directly in front of the main cabinet 1 for operating the equipment; the core chambers inside the main cabinet 1 are arranged centered on the transfer chamber 9, and the openings of the transfer chamber 9 are respectively connected to the reaction chamber 10, the cooling chamber 6 and the feeding chamber 7;

[0022] In this embodiment, the reaction chamber 10 adopts a vertical gas inlet method to realize the silicon carbide epitaxial process, and is compatible with the epitaxial processes of 4-inch and 6-inch silicon carbide substrates; the feeding chamber 7 is used for the silicon carbide substrate to enter and exit the equipment, and the chamber cover is switched by a cylinder, and the silicon carbide substrate is placed manually; the cooling chamber 6 is used for the substrate to stand still and cool after the epitaxial process is completed; a vacuum manipulator 11 is installed in the transfer chamber 9 for realizing the transfer of the silicon carbide substrate between different chambers.

[0023] In this embodiment, a special gas panel is arranged in the special gas cabinet 2 and is connected to the reaction chamber 10 inside the main cabinet 1 through special gas pipelines. The special gas connection pipeline between the special gas cabinet 2 and the main cabinet 1 can be quickly disassembled during equipment maintenance;

[0024] In this embodiment, the heating cabinet 3 and the power cabinet 4 are arranged with strong and weak power distribution panels, and power is supplied to the components inside the main cabinet 1 and the special gas cabinet 2 through cables; the cooling water cabinet 5 is arranged with water cooling pipelines and is connected to the reaction chamber 10 through the cooling water pipelines. At the same time, the cooling water cabinet 5 can also be used as a personnel platform and aisle.

[0025] The process flow of the vertical single-chamber silicon carbide epitaxial system in this embodiment is as follows:

[0026] (S1) After the system layout and debugging are completed, open the chamber cover of the feeding chamber 7;

[0027] (S2) Manually put the silicon carbide substrate into the feeding chamber 7 and close the chamber cover;

[0028] (S3) The silicon carbide substrate is taken out from the feeding chamber 7 by the vacuum manipulator 11 in the transfer chamber 9 and put into the reaction chamber 10;

[0029] (S4) The reaction chamber 10 automatically performs the silicon carbide epitaxial reaction according to the process program;

[0030] After the reaction is completed, the vacuum manipulator 11 takes out the silicon carbide substrate from the reaction chamber 10 and places it in the cooling chamber 6 for static cooling;

[0031] After the cooling is completed, the vacuum manipulator 11 takes out the silicon carbide substrate from the cooling chamber 6 and places it in the feeding chamber 7;

[0032] Open the cover of the feeding chamber 7 and manually take out the silicon carbide substrate to complete one process.

[0033] Through the above description, those skilled in the art can already implement it.

[0034] In addition, it should be noted that for the specific embodiments described in this specification, the shapes and names of their parts and components can be different. The above content described in this specification is only an example of the structure of the present invention. Any equivalent changes or simple changes made according to the structure, features, and principles described in the inventive concept of the present invention are included in the protection scope of the patent of the present invention. Those skilled in the technical field to which the present invention pertains can make various modifications or supplements to the described specific embodiments or use similar ways to replace them, as long as they do not deviate from the structure of the present invention or exceed the scope defined by this claim book, they should fall within the protection scope of the present invention.

Claims

1. A vertical single-chamber silicon carbide epitaxial system, comprising a main cabinet (1), a special gas cabinet (2), a heating cabinet (3), a power cabinet (4), a cooling water cabinet (5), a cooling chamber (6), a feeding chamber (7), a control panel (8), a transfer chamber (9) and a reaction chamber (10), characterized in that: The main cabinet (1), the special gas cabinet (2), the heating cabinet (3) and the power cabinet (4) are arranged from front to back, the cooling water cabinet (5) is arranged on the left side of the main cabinet (1), the main cabinet (1) is provided with a reaction chamber (10), a transfer chamber (9), a cooling chamber (6) and a feeding chamber (7), and a control panel (8) is arranged in front of the main cabinet (1).

2. The vertical single-chamber silicon carbide epitaxial system according to claim 1, characterized in that: It also includes a vacuum manipulator (11), and the vacuum manipulator (11) is installed in the transfer chamber (9).

3. The vertical single-chamber silicon carbide epitaxial system according to claim 1, characterized in that: It also includes universal wheels, and the main cabinet (1), the special gas cabinet (2), the heating cabinet (3) and the power cabinet (4) are all equipped with universal wheels.

4. The vertical single-chamber silicon carbide epitaxial system according to claim 1, characterized in that: The cooling water cabinet (5) is provided with a water cooling pipeline and is connected to the reaction chamber (10) via the cooling water pipeline.

5. The vertical single-chamber silicon carbide epitaxial system according to claim 1, characterized in that: The reaction chamber (10) adopts a vertical air intake method.

Images