Process chamber

Abstract

The utility model relates to a process chamber. The process chamber comprises a chamber body and a heating mechanism, the chamber body comprises a process cavity, a containing groove is formed in the side wall of the chamber body, and the containing groove is communicated with the process cavity; the heating mechanism is movably arranged on the chamber body, and the heating mechanism is arranged to move between the containing groove and the process cavity. According to the process chamber disclosed by the utility model, the heating mechanism is movably arranged in the chamber body, and the heating mechanism can be moved in dry chemical pre-cleaning to replace the movement of a wafer, so that the frequent movement of the wafer is avoided, and the displacement of the wafer is avoided; and meanwhile, in the etching process, the heating mechanism is moved into the accommodating groove, so that the hot airflow generated by heating of the heating mechanism can be prevented from influencing the chemical reaction, and the control of dry chemical pre-cleaning can be enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and particularly to a process chamber. Background Art

[0002] The pre-cleaning process before deposition in semiconductor device manufacturing is very crucial. There are many problems with traditional pre-cleaning processes. Currently, dry chemical pre-cleaning is usually used to replace the existing plasma bombardment process and hydrofluoric acid infiltration process.

[0003] However, dry chemical pre-cleaning is carried out in an etching chamber. The dry chemical pre-cleaning process requires a lifting pin to move up and down to drive the wafer to move, increasing the risk of wafer displacement during movement. Summary of the Utility Model

[0004] Based on this, it is necessary to provide a process chamber for the problem that the dry chemical pre-cleaning process in the prior art requires a lifting pin to move up and down to drive the wafer to move, increasing the risk of wafer displacement during movement.

[0005] To achieve the above object, on the one hand, the present disclosure provides a process chamber, including:

[0006] A chamber body, the chamber body includes a process chamber, and a receiving groove is provided on the side wall of the chamber body, and the receiving groove communicates with the process chamber; and

[0007] A heating mechanism, movably arranged on the chamber body, and the heating mechanism is configured to move between the receiving groove and the process chamber.

[0008] In one embodiment, the heating mechanism includes a plurality of heating parts;

[0009] A plurality of receiving grooves are provided on the side wall of the chamber body, and the receiving grooves correspond to the heating parts one by one;

[0010] Each heating part moves between a first position and a second position. When the heating part moves to the first position, the heating part is received in the receiving groove. When the heating part moves to the second position, the heating part is located in the process chamber, and the plurality of heating parts are spliced to form the heating mechanism.

[0011] In one embodiment, the plurality of heating parts include a first heating part and a second heating part. Both the first heating part and the second heating part are semi-circular. When both the first heating part and the second heating part are in the second position, the straight edge of the first heating part abuts against the straight edge of the second heating part.

[0012] In one embodiment, the heating part is provided with a plurality of through holes evenly distributed, and the through holes extend along the thickness direction of the heating part.

[0013] In one embodiment, the chamber body is provided with a receiving part, the receiving part extends in a direction away from the process chamber, and the receiving groove is formed in the receiving part.

[0014] In one embodiment, it further includes:

[0015] A transfer mechanism, disposed in the receiving groove, the transfer mechanism is connected to the heating mechanism, and the transfer mechanism is used to drive the heating mechanism to move between the receiving groove and the process chamber.

[0016] In one embodiment, the transfer mechanism is fixedly connected to the heating mechanism, the transfer mechanism is slidably connected to the wall surface of the receiving groove, and the heating mechanism slides relative to the receiving groove through the transfer mechanism to move between the receiving groove and the process chamber.

[0017] In one embodiment, an air inlet is provided on the top wall of the chamber body; the process chamber further includes:

[0018] A carrying part, disposed in the process chamber, the carrying part has a carrying surface, the carrying surface faces the air inlet, and the carrying surface is used to carry the wafer.

[0019] In one embodiment, the carrying part includes a support column and a support platform, one end of the support column passes through the bottom wall of the chamber body, the other end of the support column is connected to the support platform, and the carrying surface is disposed on a side of the support platform away from the support column.

[0020] In one embodiment, the carrying part further includes a support pin, the support pin is disposed on the bottom wall of the chamber body, the support pin penetrates through the support platform and protrudes from the carrying surface, the height of the support pin is adjustable, and the support pin is used to adjust the height of the wafer.

[0021] In the process chamber of the present invention, the heating mechanism is movably disposed in the chamber body, and the heating mechanism can be moved during dry chemical pre-cleaning to replace the movement of the wafer, thereby avoiding frequent movement of the wafer and displacement of the wafer; at the same time, during the etching process, moving the heating mechanism into the receiving groove can avoid the hot air flow generated by the heating of the heating mechanism from affecting the progress of the chemical reaction, which is beneficial to strengthening the control of dry chemical pre-cleaning. Description of the Drawings

[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can also be obtained based on these drawings.

[0023] Figure 1 Schematic diagram of the structure of the heating mechanism of the process chamber located in the process chamber provided in one embodiment;

[0024] Figure 2 Schematic diagram of the structure of the heating mechanism of the process chamber located in the accommodation groove provided in one embodiment;

[0025] Figure 3 Schematic diagram of the structure of the heating mechanism of the process chamber located in the accommodation groove provided in another embodiment;

[0026] Figure 4 Schematic diagram of the connection between the heating part and the transfer mechanism provided in one embodiment;

[0027] Figure 5 Schematic diagram of the structure of the heating mechanism provided in one embodiment;

[0028] Figure 6 Schematic diagram of the structure of the heating mechanism provided in another embodiment.

[0029] Explanation of reference numerals:

[0030] 10. Chamber body; 11. Process chamber; 12. Accommodation groove; 112. First accommodation groove; 212. Second accommodation groove; 13. Accommodation part; 14. Air inlet; 15. Air outlet; 20. Heating mechanism; 21. Heating part; 121. First heating part; 221. Second heating part; 22. Through hole; 30. Transfer mechanism; 40. Carrying part; 41. Support column; 42. Support platform; 421. Carrying surface; 43. Support pin; 50. Wafer. Detailed implementation manners

[0031] To facilitate the understanding of the present invention, the following will describe the present invention more comprehensively with reference to the relevant accompanying drawings. The preferred embodiments of the present invention are given in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this new type belongs. The terms used in the description of this new type in this article are only for the purpose of describing specific embodiments and are not intended to limit this new type.

[0033] Hereinafter, although terms such as "first", "second", etc. may be used to describe various components, these components do not have to be limited to the above terms. The above terms are only used to distinguish one component from another. It will also be understood that expressions used in the singular form include plural expressions, unless the singular form of the expression has a significantly different meaning in the context. In addition, in the following embodiments, it will also be understood that the terms "comprising" and / or "having" used herein indicate the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0034] In addition, in the specification, the phrase "schematic diagram of planar distribution" refers to the drawing when observing the target part from above, and the phrase "schematic cross-sectional diagram" refers to the drawing when observing the cross-section intercepted by vertically cutting the target part from the side.

[0035] In addition, the drawings are not drawn to a scale of 1:1, and the relative sizes of the respective elements are only drawn by way of example in the drawings and not necessarily to the true scale.

[0036] As described in the background art, dry chemical pre-cleaning is carried out in the etching chamber. The dry chemical pre-cleaning process requires the lifting pins to move up and down to drive the wafer to move, which increases the risk of the wafer being displaced during movement. Moreover, during the etching process, the hot air flow affects the progress of the chemical reaction, which is not conducive to the control of dry chemical pre-cleaning.

[0037] According to an exemplary embodiment, refer to Figure 1 、 Figure 2 、 Figure 3As shown in the figure, this embodiment provides a process chamber, which includes a chamber body 10 and a heating mechanism 20; the chamber body 10 includes a process chamber 11, and a receiving groove 12 is provided on the side wall of the chamber body 10, and the receiving groove 12 communicates with the process chamber 11; the heating mechanism 20 is movably arranged on the chamber body 10, and the heating mechanism 20 is arranged to move between the receiving groove 12 and the process chamber 11. The heating mechanism 20 can be a hot plate, such as a circular, square or other shaped hot plate. The receiving groove 12 is used to receive the heating mechanism 20, and the receiving groove 12 has a receiving space sufficient to receive the heating mechanism 20. The receiving groove 12 communicates with the process chamber 11 to facilitate the reciprocating movement of the heating mechanism 20 between the receiving groove 12 and the process chamber 11; when the heating mechanism 20 moves to the receiving groove 12 and is received in the receiving groove 12, the heating mechanism 20 does not heat the wafer 50 in the process chamber 11. When the heating mechanism 20 moves into the process chamber 11 to heat the wafer 50 in the process chamber 11, by moving the heating mechanism 20 between the receiving groove 12 and the process chamber 11, it is controlled whether the heating mechanism 20 heats the wafer 50.

[0038] In the novel process chamber, the heating mechanism 20 is movably arranged on the chamber body 10. During dry chemical pre-cleaning, the heating mechanism 20 can be moved to replace the movement of the wafer 50, thereby avoiding frequent movement of the wafer 50 and preventing displacement of the wafer 50. At the same time, during the etching process, by moving the heating mechanism 20 into the receiving groove 12, it can be avoided that the hot air flow generated by the heating of the heating mechanism 20 affects the progress of the chemical reaction, which is beneficial to strengthening the control of dry chemical pre-cleaning.

[0039] In one embodiment, referring to Figure 1 、 Figure 2 、 Figure 3 As shown in the figure, the heating mechanism 20 includes a plurality of heating parts 21, and the number of heating parts 21 is more than two. For example, the heating mechanism 20 can include two heating parts 21, three heating parts 21, four heating parts 21 or more; a plurality of receiving grooves 12 are provided on the side wall of the chamber body 10, and the number of receiving grooves 12 is more than two. For example, two receiving grooves 12, three receiving grooves 12, four receiving grooves 12 or more are provided on the side wall of the chamber body 10. The receiving grooves 12 correspond to the heating parts 21 one by one, and each heating part 21 can be correspondingly received in a receiving groove 12; each heating part 21 moves between a first position and a second position. When the heating part 21 moves to the first position, the heating part 21 is received in the receiving groove 12. When the heating part 21 moves to the second position, the heating part 21 is located in the process chamber 11, and the plurality of heating parts 21 are spliced to form the heating mechanism 20.

[0040] Thus, the heating mechanism 20 is formed by splicing a plurality of heating parts 21. The size of each heating part 21 is smaller than that of the heating mechanism 20. Each accommodating groove 12 accommodates one heating part 21 correspondingly. The accommodating groove 12 can have a relatively smaller accommodating space, and the size of each accommodating groove 12 can be reduced, making the process chamber have a miniaturized, more compact and reasonable structure, which is conducive to jointly forming a production line with other equipment and reducing the redundant occupied area of the process chamber.

[0041] Meanwhile, the size of each heating part 21 is smaller than that of the heating mechanism 20. The time required for each heating part 21 to move between the first position and the second position is less than the moving time of the heating mechanism 20 as a whole. During the dry chemical pre-cleaning process, moving each heating part 21 of the heating mechanism 20 to the corresponding accommodating groove 12 or moving each heating part 21 to the second position is faster, avoiding problems such as adverse effects on the process due to the movement delay of the heating part 21, process time delay and efficiency reduction.

[0042] In one embodiment, referring to Figure 1 、 Figure 2 、 Figure 3 、 Figure 5 As shown, the plurality of heating parts 21 include a first heating part 121 and a second heating part 221. Both the first heating part 121 and the second heating part 221 are semicircular. When the first heating part 121 and the second heating part 221 are both in the second position, the straight edge of the first heating part 121 abuts against the straight edge of the second heating part 221.

[0043] Wherein, the first position is located in the accommodating groove 12. When the first heating part 121 and the second heating part 221 are both in the second position, it means that the center of the first heating part 121 is located at the first position in the corresponding accommodating groove 12, and the center of the second heating part 221 is located at the first position in the corresponding accommodating groove 12.

[0044] The second position is located at the center of the process chamber 11 in the plane where the heating mechanism 20 is located. When the first heating part 121 and the second heating part 221 are both in the second position, it means that the center of the first heating part 121 is located at the center of the process chamber 11 in the plane where the heating mechanism 20 is located, and the center of the second heating part 221 is located at the center of the process chamber 11 in the plane where the heating mechanism 20 is located.

[0045] In this embodiment, the side wall of the chamber body 10 is provided with a first accommodating groove 112 and a second accommodating groove 212 which are oppositely arranged. The first heating part 121 can be correspondingly accommodated in the first accommodating groove 112, and the second heating part 221 can be correspondingly accommodated in the second accommodating groove 212.

[0046] When the first heating part 121 and the second heating part 221 are both in the first position, the first heating part 121 is received in the first receiving groove 112, and the straight edge of the first heating part 121 faces the process chamber 11; the second heating part 221 is received in the second receiving groove 212, and the straight edge of the second heating part 221 faces the process chamber 11. When the first heating part 121 and the second heating part 221 move from the first position to the second position, the straight edges of the first heating part 121 and the second heating part 221 move towards each other. When the first heating part 121 and the second heating part 221 move to the second position, the straight edge of the first heating part 121 abuts against the straight edge of the second heating part 221, and the first heating part 121 and the second heating part 221 are spliced into a circular heating mechanism 20. When the first heating part 121 and the second heating part 221 move from the second position to the first position, the straight edges of the first heating part 121 and the second heating part 221 move away from each other until the first heating part 121 is completely received in the first receiving groove 112 and the second heating part 221 is completely received in the second receiving groove 212, and the first heating part 121 and the second heating part 221 each move to the first position.

[0047] In other embodiments, the first heating part 121 and the second heating part 221 may be square plates of the same shape and size. When the first heating part 121 and the second heating part 221 are both in the second position, one side of the first heating part 121 abuts against one side of the second heating part 221 to form a square heating mechanism 20. Wherein, the second position is the center of the diagonal of the square heating mechanism 20.

[0048] In one embodiment, referring to Figure 1 , Figure 2 , Figure 3 , Figure 6 shown, the plurality of heating parts 21 include a first heating part 121, a second heating part 221 and a third heating part, and the first heating part 121, the second heating part 221 and the third heating part are identical sector plates. The side wall of the chamber body 10 is provided with equally spaced first receiving grooves 112, second receiving grooves 212 and third receiving grooves, and the first heating part 121, the second heating part 221, the third heating part correspond to the first receiving groove 112, the second receiving groove 212, the third receiving groove one by one.

[0049] When the first heating part 121, the second heating part 221 and the third heating part are all in the first position, the first heating part 121, the second heating part 221 and the third heating part are correspondingly received in the first receiving groove 112, the second receiving groove 212 and the third receiving groove, and the vertices of the first heating part 121, the second heating part 221 and the third heating part face the process chamber 11.

[0050] When the first heating part 121, the second heating part 221, and the third heating part move to the second position, the vertices of the first heating part 121, the second heating part 221, and the third heating part abut, and the sides of the first heating part 121, the second heating part 221, and the third heating part are sequentially attached together to form a circular heating mechanism 20.

[0051] Among them, the second position is located at the center of the process chamber 11 in the plane where the heating mechanism 20 is located.

[0052] In one embodiment, referring to Figure 5 、 Figure 6 As shown, the heating part 21 is provided with a plurality of through holes 22 evenly distributed, and the through holes 22 extend along the thickness direction of the heating part 21. The through holes 22 of the heating part 21 are evenly distributed, and the through holes 22 of the heating part 21 are used to heat the air flow in the process chamber.

[0053] In one embodiment, referring to Figure 1 、 Figure 2 As shown, the chamber body 10 is provided with a receiving part 13, and the receiving part 13 extends in a direction away from the process chamber 11, and a receiving groove 12 is formed in the receiving part 13.

[0054] The side wall of the chamber body 10 is provided with an integrally formed receiving part 13, the receiving part 13 is connected to the side wall of the chamber body 10 and extends in a direction away from the process chamber 11, and the receiving groove 12 is formed in the receiving part 13 and communicates with the process chamber 11.

[0055] In another embodiment, referring to Figure 1 、 Figure 2 、 Figure 3 As shown, the receiving groove 12 is formed in the side wall of the chamber body 10, that is, by increasing the thickness of the side wall of the chamber body 10, a receiving groove 12 communicating with the process chamber 11 is formed in the side wall of the chamber body 10.

[0056] In one embodiment, referring to Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 As shown, the process chamber further includes a transfer mechanism 30, the transfer mechanism 30 is disposed in the receiving groove 12, the transfer mechanism 30 is connected to the heating mechanism 20, and the transfer mechanism 30 is used to drive the heating mechanism 20 to move between the receiving groove 12 and the process chamber 11.

[0057] In one embodiment, the transfer mechanism 30 is fixedly connected to the heating mechanism 20, the transfer mechanism 30 is slidably connected to the wall surface of the receiving groove 12, and the heating mechanism 20 slides relative to the receiving groove 12 through the transfer mechanism 30 to move between the receiving groove 12 and the process chamber 11.

[0058] In one embodiment, the transfer mechanism 30 is a foldable structure. One end of the foldable structure is fixedly connected to the wall of the accommodation groove 12. The transfer mechanism 30 has a folded state and an unfolded state. When the transfer mechanism 30 is in the folded state, the heating part 21 is located at the first position. When the transfer mechanism 30 is in the unfolded state, the heating part 21 is located at the second position. The heating parts 21 are spliced into the heating mechanism 20. Thus, the movement of the heating part 21 can be flexibly controlled by controlling the folded state of the transfer mechanism 30.

[0059] In one embodiment, the process chamber further includes a control device (not shown in the figure). The control device is disposed outside the chamber body 10. The control device is connected to the transfer mechanism 30 for control. The control device controls the transfer mechanism 30 to move the heating part 21, so as to realize the movement of the heating part 21 between the first position and the second position, and further control the movement of the heating mechanism 20 between the accommodation groove 12 and the process chamber 11.

[0060] In one embodiment, referring to Figure 1 , Figure 2 , Figure 3 As shown, an air inlet 14 is provided on the top wall of the chamber body 10; the process chamber further includes a bearing part 40. The bearing part 40 is disposed in the process chamber 11. The bearing part 40 has a bearing surface 421. The bearing surface 421 faces the air inlet 14. The bearing surface 421 is used for bearing the wafer 50.

[0061] In one embodiment, the bearing part 40 includes a support column 41 and a support platform 42. One end of the support column 41 passes through the bottom wall of the chamber body 10, and the other end of the support column 41 is connected to the support platform 42. The bearing surface 421 is disposed on the side of the support platform 42 away from the support column 41.

[0062] In one embodiment, referring to Figure 1 , Figure 2 , Figure 3 As shown, an air outlet 15 is further provided on the bottom wall of the chamber body 10. The air outlet 15 is disposed directly below the air inlet 14; the support column 41 passes through the bottom wall of the chamber body 10 via the air outlet 15.

[0063] In one embodiment, referring to Figure 1 , Figure 2 , Figure 3 As shown, the bearing part further includes a support pin 43. The support pin 43 is disposed on the bottom wall of the chamber body 10. The support pin 43 passes through the support platform 42 and protrudes from the bearing surface 421. The height of the support pin 43 is adjustable. The support pin 43 is used to adjust the height of the wafer 50.

[0064] In the process chamber of the present invention, by movably arranging the heating mechanism in the chamber body, the heating mechanism can be moved during dry chemical pre-cleaning to replace the movement of the wafer, thereby avoiding frequent movement of the wafer and preventing the wafer from being displaced. At the same time, during the etching process, moving the heating mechanism into the receiving groove can prevent the hot air flow generated by the heating of the heating mechanism from affecting the progress of the chemical reaction, which is beneficial to strengthening the control of dry chemical pre-cleaning.

[0065] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features of the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0066] The above-described embodiments only represent several implementation manners of the present invention. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can be made, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the present invention patent shall be subject to the appended claims.

Claims

1. A process chamber, characterized in that: include: A chamber body (10), the chamber body (10) comprising a process chamber (11), a side wall of the chamber body (10) being provided with a receiving groove (12), the receiving groove (12) being in communication with the process chamber (11); and A heating mechanism (20) is movably arranged on the chamber body (10), and the heating mechanism (20) is arranged to move between the containing groove (12) and the process chamber (11).

2. The process chamber (11) according to claim 1, characterized in that: The heating mechanism (20) comprises a plurality of heating parts (21); The side wall of the chamber body (10) is provided with a plurality of accommodating grooves (12), and the accommodating grooves (12) correspond one-to-one to the heating parts (21); Each of the heating parts (21) moves between a first position and a second position. When the heating part (21) moves to the first position, the heating part (21) is accommodated in the receiving groove (12). When the heating part (21) moves to the second position, the heating part (21) is located in the process chamber (11). A plurality of the heating parts (21) are spliced ​​together to form the heating mechanism (20).

3. The process chamber according to claim 2, characterized in that: The multiple heating parts (21) include a first heating part (121) and a second heating part (221); the first heating part (121) and the second heating part (221) are both semicircular; when the first heating part (121) and the second heating part (221) are both located at the second position, the straight edge of the first heating part (121) fits the straight edge of the second heating part (221).

4. The process chamber according to claim 2, characterized in that: The heating portion (21) is provided with a plurality of evenly distributed through holes (22), and the through holes (22) extend along the thickness direction of the heating portion (21).

5. The process chamber according to claim 1, characterized in that: The chamber body (10) is provided with a receiving portion (13), the receiving portion (13) extending in a direction away from the process chamber (11), and the receiving groove (12) is formed in the receiving portion (13).

6. The process chamber according to any one of claims 1 to 5, characterized in that: Also includes: A transfer mechanism is provided in the containing groove (12), the transfer mechanism is connected to the heating mechanism (20), and the transfer mechanism is used to drive the heating mechanism (20) to move between the containing groove (12) and the process chamber (11).

7. The process chamber according to claim 6, characterized in that: The transfer mechanism (30) is fixedly connected to the heating mechanism (20), and the transfer mechanism (30) is slidably connected to the wall surface of the accommodating groove (12). The heating mechanism (20) slides relative to the accommodating groove (12) through the transfer mechanism (30) to move between the accommodating groove (12) and the process chamber (11).

8. The process chamber (11) according to claim 1, characterized in that: The top wall of the chamber body (10) is provided with an air inlet (14); the process chamber further comprises: The carrying portion (40) is arranged in the process chamber (11), the carrying portion (40) having a carrying surface (421), the carrying surface (421) facing the air inlet (14), and the carrying surface (421) being used to carry a wafer (50).

9. The process chamber according to claim 8, characterized in that: The bearing portion (40) comprises a supporting column (41) and a supporting platform (42), one end of the supporting column (41) passes through the bottom wall of the chamber body (10), the other end of the supporting column (41) is connected to the supporting platform (42), and the bearing surface (421) is arranged on a side of the supporting platform (42) away from the supporting column (41).

10. The process chamber according to claim 9, characterized in that: The bearing portion (40) further comprises a support pin (43), wherein the support pin (43) is arranged on the bottom wall of the chamber body (10), and the support pin (43) passes through the support platform (42) and protrudes from the bearing surface (421). The height of the support pin (43) is adjustable, and the support pin (43) is used to adjust the height of the chip (50).

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