Transverse protection device with low breakdown and high maintenance

Abstract

The utility model discloses a transverse protection device with low breakdown and high maintenance, which is characterized in that an N-substrate is arranged at the bottommost part, a P + doped region and a P-well region are arranged above the N-substrate, a front metal anode is arranged above the P + doped region, a front metal cathode is arranged above the P-well region, an N doped region is arranged at the contact position of the top of the N-substrate and the P-well region, and the N doped region is arranged at the contact position of the top of the N-substrate and the P-well region. A first P-doped region is arranged at the contact position of the top of the P-well region and the N-substrate, and a second P-doped region is arranged below the interior of the P-well region. According to the utility model, through a newly designed structure, the ESD protection device can be used in a unidirectional ESD protection device of a 5 or 7 V voltage series; the breakdown voltage can be adjusted by adjusting the doping concentration of the N doped region and the P doped region, so that the breakdown voltage is effectively reduced without influencing the parasitic capacitance; the charge concentration is adjusted by using the second P doped region of the P-well region, so that the capacitance is not changed while the maintaining voltage is improved, and the transmission rate of the protected circuit is not influenced.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic components, and more specifically, to a lateral protection device with low breakdown and high maintenance. Background Art

[0002] Electrostatic discharge (ESD) is widely present in daily life. For the precision integrated circuit manufacturing industry, it is one of the important reasons for product damage or even failure. Integrated circuit products are extremely susceptible to EDS during their production, assembly and use, causing internal damage, reduced reliability and other events. In addition, the application environment also has strict requirements on parameters such as capacitance, breakdown voltage, and clamping characteristics.

[0003] For different applications, the system has different parameter requirements for ESD protection devices. According to different working voltages, the corresponding ESD protection levels are also divided into 3, 5, 7, 12, 24, 36V and other voltage levels. There are also different requirements for electric heating according to the speed of data transmission. For DC transmission or low-speed data transmission, ordinary capacitor series ESD protectors can be used to reduce costs, but the current discharge capacity of such traditional devices will be relatively weak.

[0004] Commonly used ESD protection devices include diodes, GGNMOS (gate grounded NMOS), BJT (bipolar junction transistor), SCR (silicon controlled rectifier), etc. The protection capabilities of existing ESD protection devices are insufficient, and there are large parasitic capacitances inside. Utility Model Content

[0005] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a lateral protection device with low breakdown and high maintenance, so as to solve one or more of the above-mentioned problems.

[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0007] A protection device with low breakdown and high maintenance in the lateral direction, wherein a concave contact hole metal and a convex contact hole metal are provided on the front side of the protection device, a passage is left between the concave contact hole metal and the convex contact hole metal, the concave contact hole metal is a front metal cathode, the convex contact hole metal is a front metal anode, and further comprises an N-substrate, a P-well region, a P+ doping region, a first P doping region, an N doping region, and a second P doping region, wherein the N-substrate is provided at the bottom, the P+ doping region and the P-well region are provided above the N-substrate, the front metal anode is provided above the P+ doping region, the front metal cathode is provided above the P-well region, the N doping region is provided at the contact position between the top of the N-substrate and the P-well region, the first P doping region is provided at the contact position between the top of the P-well region and the N-substrate, the first P doping region is in direct contact with the N doping region, and a second P doping region is provided below the inside of the P-well region.

[0008] Furthermore, the P+ doping region is located in the middle area of ​​the P-well region, and an additional P+ doping region is provided on the contact surface between the P-well region and the front metal cathode.

[0009] Furthermore, an N+ doping region is provided on the contact surface between the P-well region and the front metal cathode, and the N+ doping region is not in direct contact with the P+ doping region.

[0010] Furthermore, a dielectric isolation layer is provided between the front metal cathode and the front metal anode, between the front metal cathode and the P-well region, and between the front metal anode and the P+ doped region.

[0011] Furthermore, the first P-doped region is also in contact with the corresponding dielectric isolation layer, and the N-doped region is also in contact with the corresponding dielectric isolation layer.

[0012] Furthermore, the N+ doped region and the P+ doped region are in direct contact with the P-well region, the dielectric isolation layer, and the front metal cathode.

[0013] In summary, the utility model has the following beneficial effects: through the newly designed structure, it can be used in unidirectional ESD protection devices of 5 or 7V voltage series; the breakdown voltage can be adjusted by adjusting the doping concentration of the N-doped area and the P-doped area, thereby effectively reducing its breakdown voltage without affecting the parasitic capacitance; the charge concentration is adjusted by using the second P-doped area of ​​the P-well area, thereby increasing the maintenance voltage without changing its capacitance size and without affecting the transmission rate of the protected circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A one-way structural cross-sectional view of an embodiment provided by the utility model;

[0015] Figure 2 A top view of a one-way structure of an embodiment provided by the utility model.

[0016] In the figure: 101, N-substrate; 102, P-well region; 103, P+ doping region; 104, N+ doping region; 105, first P doping region; 106, N doping region; 107, second P doping region; 108, dielectric isolation layer; 109, front metal anode; 110, front metal cathode. DETAILED DESCRIPTION

[0017] The following is combined with Figure 1-2 The utility model is described in further detail.

[0018] A lateral protection device with low breakdown and high maintenance, such as Figure 2 As shown, two contact hole metals are provided on the front side, that is, the top, which are divided into concave contact hole metal and convex contact hole metal. The convex end of the convex contact hole metal relatively extends into the concave end of the concave contact hole metal, but there is still a passage between the convex contact hole metal and the concave contact hole metal, and they are not in direct contact. The concave contact hole metal is the front metal cathode 110. Correspondingly, the convex contact hole metal is the front metal anode 109. A dielectric isolation layer 108 is provided between the front metal layer and the functional layer below.

[0019] like Figure 1 As shown, the bottom end of the protection device is an N-substrate 101, and a P+ doping region 103 and a P-well region 102 are provided above the N-substrate 101. The P+ doping region 103 is provided corresponding to the front metal anode 109, which is provided below the convex contact hole metal. The P-well region 102 is provided corresponding to the front metal cathode 110, which is provided below the concave contact hole metal. The position of the P+ doping region 103 is located in the central loop area of ​​the P-well region 102. An N-doping region 106 is provided at a position where the N-substrate 101 directly contacts the P-well region 102 and the dielectric isolation layer 108. A first P-doping region 105 is provided at a position where the P-well region 102 directly contacts the N-substrate 101 and the dielectric isolation layer 108. The first P-doping region 105 is in direct contact with the N-doping region 106.

[0020] In addition, a second P-doped region 107 is provided at the lower part of the P-well region 102, and an N+ doped region 104 and an additional P+ doped region 103 are provided at the position where the P-well region 102 contacts the front metal cathode 110. The P+ doped region 103 and the N+ doped region 104 are not in direct contact. In addition to the dielectric isolation layer 108 provided between the N-substrate 101 and the main P+ doped region 103 and the front metal anode 109 and the front metal cathode 110, two parts of the dielectric isolation layer 108 are provided between the P-well region 102 and the front metal cathode 110, and the dielectric isolation layer 108 at this location is laterally located between the N+ doped region 104 and the additional P+ doped region 103, and between the additional P+ doped region 103 and the edge of the P-well region 102.

[0021] Compared with the existing general structure, the breakdown voltage is reduced by using the N-doped region 106 and the P-doped region without affecting its parasitic capacitance, which can be achieved by adjusting the corresponding doping concentration. The second P-doped region 107 in the P-well region 102 adjusts the charge concentration of the P-well region 102 to adjust the holding voltage without changing its capacitance and affecting the transmission rate of the protected circuit. The protection device can be used in unidirectional ESD protection devices of 5V and 7V voltage series.

[0022] It should be noted that this specific embodiment is merely an explanation of the present utility model, and it is not a limitation of the present utility model. After reading this specification, those skilled in the art can make non-creative modifications to the present embodiment as needed, but as long as it is within the scope of the claims of the present utility model, it is protected by the patent law.

Claims

1. A protection device with low breakdown and high maintenance in the lateral direction, wherein a concave contact hole metal and a convex contact hole metal are provided on the front side of the protection device, a passage is left between the concave contact hole metal and the convex contact hole metal, the concave contact hole metal is a front metal cathode (110), and the convex contact hole metal is a front metal anode (109), characterized in that: The device also includes an N-substrate (101), a P-well region (102), a P+ doping region (103), a first P doping region (105), an N doping region (106) and a second P doping region (107), wherein the N-substrate (101) is arranged at the bottom, the P+ doping region (103) and the P-well region (102) are arranged above the N-substrate (101), the front metal anode (109) is located above the P+ doping region (103), and the front metal cathode (11 0) is located above the P-well region (102), the N-doped region (106) is provided at a contact position between the top of the N-substrate (101) and the P-well region (102), the first P-doped region (105) is provided at a contact position between the top of the P-well region (102) and the N-substrate (101), the first P-doped region (105) and the N-doped region (106) are in direct contact, and a second P-doped region (107) is provided inside and below the P-well region (102).

2. The lateral protection device with low breakdown and high maintenance according to claim 1, characterized in that: The P+ doping region (103) is located in the middle area of ​​the P-well region (102), and an additional P+ doping region (103) is provided on the contact surface between the P-well region (102) and the front metal cathode (110).

3. The lateral protection device with low breakdown and high maintenance according to claim 2, characterized in that: An N+ doping region (104) is provided at a contact surface between the P-well region (102) and the front metal cathode (110); the N+ doping region (104) and the P+ doping region (103) are not in direct contact.

4. The lateral protection device with low breakdown and high maintenance according to claim 3, characterized in that: A dielectric isolation layer (108) is provided between the front metal cathode (110) and the front metal anode (109), between the front metal cathode (110) and the P-well region (102), and between the front metal anode (109) and the P+ doped region (103).

5. The lateral protection device with low breakdown and high maintenance according to claim 4, characterized in that: The first P-doped region (105) is also in contact with the corresponding dielectric isolation layer (108), and the N-doped region (106) is also in contact with the corresponding dielectric isolation layer (108).

6. The lateral protection device with low breakdown and high maintenance according to claim 5, characterized in that: The N+ doped region (104) and the P+ doped region (103) are both in direct contact with the P-well region (102), the dielectric isolation layer (108), and the front metal cathode (110).

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