Half-bridge driving circuit and chip

Abstract

The embodiment of the utility model provides a half-bridge driving circuit and a chip. The half-bridge driving circuit comprises a level conversion module, a well diode and a first resistance module. The level conversion module is used for converting a signal received by the high-side control signal receiving end into a signal for controlling the on-off of a high-side power tube; the well diode is formed by the high-voltage well and the reference ground end and is reversely connected between the high-voltage power supply end and the reference ground end; the first resistance module is connected between the well region where the high-voltage power supply end is located and the power supply end. The breakdown voltage of the level conversion module and the well diode is smaller than that of the first resistance module. Through the implementation of the utility model, the first resistance module can preferentially establish a current channel from the well region where the high-voltage power supply end is located to the power supply end, so that the electric power impact resistance of the high-voltage well is greatly improved, the electrostatic resistance between the high side and the low side is further improved, and the internal circuit in the high-voltage well is not easy to damage; and the pressure-resistant requirement on the technological process is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of integrated circuits, in particular to a half-bridge drive circuit and a chip. Background Art

[0002] At present, with the development of new power devices and process technologies in recent decades, high-voltage power integrated circuits have been rapidly developed. Among them, the high-voltage half-bridge driver chip is mainly used to drive the power tube of the external half-bridge topology structure. The internal drive circuit is divided into a high-voltage side gate drive circuit and a low-voltage side gate drive circuit according to the different working power supply voltages. For the high-voltage power supply terminal VB, a gate drive voltage is provided for the high-voltage side power tube. In the prior art, in order to prevent static electricity from damaging the internal circuit of the chip, a corresponding electrostatic protection device is usually set near the pad where the high-voltage power supply terminal VB is located. However, in actual applications, due to different production process limitations, the electrostatic protection capability of the high-voltage power supply terminal VB often fails to meet the design requirements. Utility Model Content

[0003] The purpose of the embodiment of the utility model is to provide a half-bridge driving circuit and chip to solve the above problems. The embodiment of the utility model achieves the above purpose through the following technical solutions.

[0004] The utility model embodiment provides a half-bridge driving circuit, including: a level conversion module, connected between a high-voltage power supply terminal and a reference ground terminal, the input end of the level conversion module is connected to a high-side control signal receiving end, the output end of the level conversion module is used to connect to the control end of the high-side power tube, the level conversion module is configured to convert the signal received by the high-side control signal receiving end into a signal for controlling the on-off of the high-side power tube; a well diode formed by a high-voltage well and a reference ground terminal, reversely connected between the high-voltage power supply terminal and the reference ground terminal; a first resistance module, connected between a well region where the high-voltage power supply terminal is located and a power supply terminal, the breakdown voltage of the level conversion module and the well diode being less than the breakdown voltage of the first resistance module.

[0005] In some embodiments, the first resistance module includes: a first transistor, a first end of which is connected to the high voltage power supply end, and a second end of which is connected to the power supply end; and a first resistor, connected between the third end of the first transistor and the power supply end.

[0006] In some embodiments, the first resistance module includes at least one of a diode and a bipolar transistor.

[0007] In some embodiments, the half-bridge driving circuit further includes a first switch tube connected between the high voltage power supply terminal and the control terminal of the high-side power tube.

[0008] In some embodiments, the half-bridge driving circuit further includes a second switch tube connected between the control terminal of the high-side power tube and the high-side floating power supply terminal.

[0009] In some embodiments, the half-bridge driving circuit further includes: a second resistance module connected between the well region where the high-voltage power supply terminal is located and the reference ground terminal.

[0010] In some embodiments, the half-bridge driving circuit further includes: a third resistance module connected between the well region where the high-side floating power supply terminal is located and the reference ground terminal.

[0011] In some embodiments, the half-bridge driving circuit further includes: a fourth resistance module connected between the high-voltage power supply terminal and the high-side floating power supply terminal.

[0012] In some embodiments, the level conversion module includes: a first diode, whose cathode is connected to the high voltage power supply terminal; a second resistor, whose first end is connected to the high voltage power supply terminal, and whose second end is connected to the anode of the first diode; a second transistor, whose first end is connected to the anode of the first diode, and whose second end is connected to the reference ground terminal, the third end of the second transistor serves as the input end of the level conversion module, and the first end of the second transistor serves as the output end of the level conversion module.

[0013] An embodiment of the utility model further provides a half-bridge driving chip, and the half-bridge driving chip includes the half-bridge driving circuit provided by any of the above embodiments.

[0014] The half-bridge driving circuit and chip provided in this embodiment include a level conversion module, a well diode and a first resistance module. Among them, the level conversion module is connected between the high-voltage power supply end and the reference ground end, the input end of the level conversion module is connected to the high-side control signal receiving end, the output end of the level conversion module is used to connect to the control end of the high-side power tube, and the level conversion module is configured to convert the signal received by the high-side control signal receiving end into a signal for controlling the on-off of the high-side power tube; the well diode formed by the high-voltage well and the reference ground end is reversely connected between the high-voltage power supply end and the reference ground end; the first resistance module is connected between the well area where the high-voltage power supply end is located and the power supply end, and the breakdown voltage of the level conversion module and the well diode is less than the breakdown voltage of the first resistance module. Through the implementation of this embodiment, the well diode and the first resistance module can both be able to resist the power shock outside the high-voltage well area, especially through the first resistance module, the current channel from the well area where the high-voltage power supply end is located to the power supply end can be preferentially established, so that the high-voltage well can greatly improve its ability to resist power shock, and thus also improve the ability to resist static electricity between the high side and the low side, so that the internal circuit in the high-voltage well is not easy to be damaged, and the withstand voltage requirements for the process are reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments of the utility model will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 is a schematic diagram of a module of a half-bridge driving circuit provided in this embodiment;

[0017] Figure 2 is another module schematic diagram of the half-bridge driving circuit provided in this embodiment;

[0018] Figure 3 Schematic diagram of a circuit structure of a half-bridge driving circuit provided in this embodiment. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0020] like Figure 1 As shown, this embodiment provides a half-bridge driving circuit, which includes a level conversion module 11, a well diode 12 and a first resistance module 13. Among them, the level conversion module 11 is connected between the high-voltage power supply terminal VB and the reference ground terminal GND, the input end of the level conversion module 11 is connected to the high-side control signal receiving end, the output end of the level conversion module 11 is used to connect to the control end HO of the high-side power tube M1, and the level conversion module 11 is configured to convert the signal received by the high-side control signal receiving end into a signal for controlling the on-off of the high-side power tube M1; the well diode 12 formed by the high-voltage well and the reference ground terminal GND is reversely connected between the high-voltage power supply terminal VB and the reference ground terminal GND; the first resistance module 13 is connected between the well region where the high-voltage power supply terminal VB is located and the power supply terminal VCC, and the breakdown voltage of the level conversion module 11 and the well diode 12 is less than the breakdown voltage of the first resistance module 13.

[0021] In this embodiment, the half-bridge circuit may include a high-side power tube M1 and a low-side power tube M2, the gate of the high-side power tube M1 serves as the control terminal HO of the high-side power tube M1, the gate of the low-side power tube M2 serves as the control terminal of the low-side power tube M2, the high-voltage power supply terminal VB obtains a voltage for indirectly supplying power to the gate of the high-side power tube M1 through a bootstrap circuit, and the power supply terminal VCC can be regarded as a power supply voltage terminal of the half-bridge driver chip, and can also be regarded as a power supply terminal for providing a driving voltage to the low-side power tube M2.

[0022] In this embodiment, the input end of the level conversion module 11 receives a high-side control signal for controlling the high-side power tube M1, converts the high-side control signal into a signal for controlling the on-off of the high-side power tube M1, and the output end of the level conversion module 11 outputs the signal. It should be noted that the output end of the level conversion module 11 can be directly connected to the control end HO of the high-side power tube M1, or can be indirectly connected to the control end HO of the high-side power tube M1.

[0023] In this embodiment, the anode of the well diode 12 is connected to the reference ground terminal GND, and the cathode of the well diode 12 is connected to the high voltage power supply terminal VB. The reverse breakdown voltage of the well diode 12 can be increased by changing the doping concentration and geometric dimensions of the high voltage well region. The greater the reverse breakdown voltage, the less likely the internal circuit in the high voltage well will be damaged by external power shock. Figure 3 As shown, the structure of the well diode 12 can be as follows Figure 3 Diode D1 is shown.

[0024] In this embodiment, the first resistance module 13 can be arranged in the high-voltage well area, and the well area where the high-side power supply terminal is located can be in the high-voltage well. The breakdown voltage of the first resistance module 13 is greater than the breakdown voltage of the level conversion module 11 and the well diode 12. When the internal circuit in the high-voltage well is subjected to external power shock, the first resistance module 13 can establish a current channel from the well area where the high-voltage power supply terminal VB is located to the power supply terminal VCC, and preferentially release this part of the power shock to resist this part of the power shock.

[0025] In this embodiment, the well diode 12 and the first resistance module 13 can both resist the electrical shock outside the high-voltage well area. In particular, the first resistance module 13 can preferentially establish a current channel from the well area where the high-voltage power supply terminal VB is located to the power supply terminal VCC, thereby greatly improving the high-voltage well's ability to resist electrical shocks, thereby also improving the ability to resist static electricity between the high side and the low side, making the internal circuit in the high-voltage well less susceptible to damage, and reducing the voltage resistance requirements for the process.

[0026] Furthermore, a first capacitor C1 may be provided between the high-voltage power supply terminal VB and the power supply terminal VCC, and a second capacitor C2 may be provided between the high-voltage power supply terminal VB and the high-side floating power supply terminal VS.

[0027] Furthermore, if Figure 3 As shown, in some embodiments, the first resistance module 13 may include: a first transistor N1, whose first end is connected to the high-voltage power supply terminal VB, and whose second end is connected to the power supply terminal VCC; a first resistor R1, connected between the third end of the first transistor N1 and the power supply terminal VCC. Among them, the number of first transistors N1 connected in parallel can be multiple. When the voltage borne by the well region where the high-voltage power supply terminal VB is located exceeds the breakdown voltage of the first resistance module 13, a discharge path from the first end of the first transistor N1 to the power supply terminal VCC is formed to protect the internal circuit in the high-voltage well.

[0028] In addition, the first transistor N1 may be an N-type metal-oxide semiconductor field effect transistor, a first terminal thereof may be a drain, a second terminal thereof may be a source, and a third terminal thereof may be a gate.

[0029] Further, in some embodiments, the first resistance module 13 may include at least one of a diode and a bipolar transistor. When the first resistance module 13 includes a diode, the anode of the diode is connected to the reference ground terminal GND, and the cathode of the diode is connected to the high-voltage power supply terminal VB. When the first resistance module 13 includes a bipolar transistor, the base and emitter of the bipolar transistor are both connected to the high-voltage power supply terminal VB, and the collector of the bipolar transistor is connected to the power supply terminal VCC.

[0030] In addition, in some embodiments, Figure 2 As shown, the half-bridge driving circuit may further include a second resistance module 14, which is connected between the well region where the high-voltage power supply terminal VB is located and the reference ground terminal GND. The breakdown voltage of the level conversion module 11 and the well diode 12 is less than the breakdown voltage of the second resistance module 14. Through the second resistance module 14, a discharge path can be formed between the well region where the high-voltage power supply terminal VB is located and the reference ground terminal GND to prevent the power impact at the high-voltage well.

[0031] In addition, in some embodiments, Figure 2 As shown, the half-bridge driving circuit may further include a third resistance module 15, connected between the well region where the high-side floating power supply terminal VS is located and the reference ground terminal GND. The breakdown voltage of the level conversion module 11 and the well diode 12 is less than the breakdown voltage of the third resistance module 15. Through the third resistance module 15, a discharge path may be formed between the well region where the high-side floating power supply terminal VS is located and the reference ground terminal GND to prevent the power impact at the high-side floating power supply terminal VS.

[0032] It should be noted that the structures of the second resistance module 14 and the third resistance module 15 may be consistent with the circuit structure of the first resistance module 13 .

[0033] In addition, in some embodiments, the half-bridge driving circuit may further include a fourth resistance module connected between the high-voltage power supply terminal VB and the high-side floating power supply terminal VS. The breakdown voltage of the level conversion module 11 and the well diode 12 is less than the breakdown voltage of the fourth resistance module. It should be noted that the fourth resistance module may be arranged near the pad where the high-voltage power supply terminal VB is located and / or the pad where the high-side floating power supply terminal VS is located to form a discharge path between the high-voltage power supply terminal VB and the high-side floating power supply terminal VS. The fourth resistance module may be as follows Figure 3 As shown in the transistor N3 in FIG. 1 , the source and gate of the transistor N3 are connected to the high-voltage power supply terminal VB, and the drain of the transistor N3 is connected to the high-side floating power supply terminal VS.

[0034] It should be noted that the first resistance module 13 can be applied simultaneously with one or more of the second resistance module 14 , the third resistance module 15 , and the third resistance module 15 .

[0035] Furthermore, in some embodiments, Figure 3 As shown, the half-bridge drive circuit may further include a first switch tube K1, connected between the high-voltage power supply terminal VB and the control terminal HO of the high-side power tube M1. When the first switch tube K1 is turned on, a current is generated from the high-voltage power supply terminal VB to the control terminal HO of the high-side power tube M1, thereby controlling the gate voltage rising rate of the high-side power tube M1, so that the conduction process of the high-side power tube M1 meets the desired state.

[0036] The first switch tube K1 may be a P-type metal-oxide semiconductor field effect transistor, whose source is connected to the high voltage power supply terminal VB, whose drain is connected to the control terminal HO of the high side power tube M1, and whose gate may be controlled by a high side control signal.

[0037] Furthermore, in some embodiments, Figure 3 As shown, the half-bridge drive circuit may further include a second switch tube K2, connected between the control terminal HO of the high-side power tube M1 and the high-side floating power supply terminal VS. When the second switch tube is turned on, a current flows from the control terminal HO of the high-side power tube M1 to the high-side floating power supply terminal VS, thereby controlling the gate voltage drop rate of the high-side power tube M1, so that the shutdown process of the high-side power tube M1 meets the desired state.

[0038] The first switch tube K1 may be an N-type metal-oxide semiconductor field effect transistor, whose source is connected to the control terminal HO of the high-side power tube M1, whose drain is connected to the high-side floating power terminal VS, and whose gate may be controlled by a high-side control signal.

[0039] Furthermore, if Figure 3 As shown, in some embodiments, the level conversion module 11 may include: a first diode D2, whose cathode is connected to the high-voltage power supply terminal VB; a second resistor R2, whose first end is connected to the high-voltage power supply terminal VB, and whose second end is connected to the anode of the first diode D2; a second transistor N2, whose first end is connected to the anode of the first diode D2, and whose second end is connected to the reference ground terminal GND, the third end of the second transistor N2 serves as the input end of the level conversion module 11, and the first end of the second transistor N2 serves as the output end of the level conversion module 11.

[0040] In this embodiment, when the second transistor N2 is turned on, the first terminal voltage of the second transistor N2 is VB-VD2 (VD2 is the breakdown voltage of the first diode D2) or VB-I1×R1 (I1 is the current flowing through the second resistor R2); when the second transistor N2 is turned off, the first terminal voltage of the second transistor N2 is VB.

[0041] In this embodiment, the second transistor N2 may be an N-type metal-oxide semiconductor field effect transistor, whose drain serves as the first end of the second transistor N2, whose source serves as the second end of the second transistor N2, and whose gate serves as the third end of the second transistor N2.

[0042] Furthermore, in some embodiments, the level conversion module 11 may also include: a second diode, whose cathode is connected to the high-voltage power supply terminal VB; a third resistor, whose first end is connected to the high-voltage power supply terminal VB, and whose second end is connected to the anode of the second diode; a third transistor, whose first end is connected to the anode of the second diode, and whose second end is connected to the reference ground terminal GND, the third end of the third transistor serves as the input end of the level conversion module 11, and the first end of the third transistor serves as the output end of the level conversion module 11.

[0043] In this embodiment, when the third transistor is turned on, the first terminal voltage of the third transistor is VB-VD3 (VD3 is the breakdown voltage of the second diode) or VB-I2×R2 (I2 is the current flowing through the third resistor); when the third transistor is turned off, the first terminal voltage of the third transistor is VB.

[0044] In this embodiment, the third transistor may be an N-type metal-oxide semiconductor field effect transistor, whose drain serves as the first end of the third transistor, whose source serves as the second end of the third transistor, and whose gate serves as the third end of the third transistor.

[0045] In this embodiment, the first end of the second transistor N2 and the first end of the third transistor can alternately generate voltage signals to indirectly provide a driving signal for the gate of the high-side power transistor M1 in the half-bridge circuit.

[0046] An embodiment of the utility model further provides a half-bridge driving chip, and the half-bridge driving chip includes the half-bridge driving circuit provided by any of the above embodiments.

[0047] Since the circuit structure and working mode of the half-bridge driving circuit in the half-bridge driving chip in this embodiment are the same as those of the half-bridge driving circuit in the previous embodiment, they will not be described in detail here.

[0048] The embodiments described above are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention.

Claims

1. A half-bridge driving circuit, characterized in that: include: A level conversion module is connected between the high-voltage power supply terminal and the reference ground terminal, wherein the input terminal of the level conversion module is connected to the high-side control signal receiving terminal, and the output terminal of the level conversion module is used to be connected to the control terminal of the high-side power tube, and the level conversion module is configured to convert the signal received by the high-side control signal receiving terminal into a signal for controlling the on / off of the high-side power tube; A well diode formed by a high voltage well and the reference ground terminal is reversely connected between the high voltage power supply terminal and the reference ground terminal; The first resistance module is connected between the well region where the high voltage power supply end is located and the power supply end, and the breakdown voltage of the level conversion module and the well diode is smaller than the breakdown voltage of the first resistance module.

2. The half-bridge driving circuit according to claim 1, characterized in that: The first resistance module comprises: A first transistor, a first end of which is connected to the high voltage power supply end, and a second end of which is connected to the power supply end; The first resistor is connected between the third terminal of the first transistor and the power supply terminal.

3. The half-bridge driving circuit according to claim 1, characterized in that: The first resistance module includes at least one of a diode and a bipolar transistor.

4. The half-bridge driving circuit according to claim 1, characterized in that: It also includes a first switch tube connected between the high-voltage power supply terminal and the control terminal of the high-side power tube.

5. The half-bridge driving circuit according to claim 4, characterized in that: It also includes a second switch tube connected between the control end of the high-side power tube and the high-side floating power supply end.

6. The half-bridge driving circuit according to claim 1, characterized in that: Also includes: The second resistance module is connected between the well region where the high voltage power supply terminal is located and the reference ground terminal.

7. The half-bridge driving circuit according to claim 1, characterized in that: Also includes: The third resistance module is connected between the well region where the high-side floating power supply terminal is located and the reference ground terminal.

8. The half-bridge driving circuit according to claim 1, characterized in that: Also includes: The fourth resistance module is connected between the high voltage power supply terminal and the high side floating power supply terminal.

9. The half-bridge driving circuit according to claim 1, characterized in that: The level conversion module comprises: A first diode, a cathode of which is connected to the high voltage power supply terminal; a second resistor, a first end of which is connected to the high voltage power supply terminal, and a second end of which is connected to the anode of the first diode; A second transistor, a first end of which is connected to the anode of the first diode, a second end of which is connected to the reference ground, a third end of the second transistor serving as an input end of the level conversion module, and a first end of the second transistor serving as an output end of the level conversion module.

10. A half-bridge driver chip, characterized in that: The invention comprises the half-bridge driving circuit as claimed in any one of claims 1 to 9.

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