Thermo-sensitive infrared sensing unit and thermo-sensitive infrared detector

Abstract

The utility model relates to the field of infrared detection, in particular to a thermosensitive infrared sensing unit and a thermosensitive infrared detector, which sequentially comprise a readout circuit substrate layer, a continuous metal layer, a first insulating layer, a thermistor sensing layer, a second insulating layer and a pattern metal layer from bottom to top, the continuous metal layer and the thermistor sensing layer are electrically isolated by the first insulating layer, and the pattern metal layer and the thermistor sensing layer are electrically isolated by the second insulating layer; the pattern metal layer and / or the continuous metal layer are / is an air suction metal layer. According to the utility model, the first insulating layer, the thermistor layer and the second insulating layer are arranged between the two metal layers and serve as dielectric media in the MIM structure, so that the thickness increased by introducing the MIM structure is reduced, the miniaturization of the device is facilitated, and higher detection sensitivity and detection precision are guaranteed.

Description

Technical Field

[0001] The utility model relates to the field of infrared detection, in particular to a thermosensitive infrared sensing unit and a thermosensitive infrared detector. Background Art

[0002] Thermal infrared detectors are a technology that can sense and analyze infrared radiation in the surrounding environment, and perform tasks such as target detection and temperature measurement based on the thermal radiation characteristics of the target. This includes microbolometers, thermopile detectors, pyroelectric detectors, etc. Among them, thermistors, as the key part of the sensor, absorb infrared radiation to cause their own temperature changes, thereby changing their physical properties to achieve infrared detection.

[0003] In order to improve the absorption efficiency of infrared radiation by the detector, the artificial microstructure of metal-dielectric-metal (MIM) can be used. Its basic structure is as follows: the bottom layer is a continuous metal film layer, the middle layer is a dielectric layer, and the top layer is a patterned metal layer. By adjusting the size of the top patterned metal, different absorption frequencies can be controlled. By using its efficient control ability of the electromagnetic field, efficient absorption of the incident wave can be achieved, thereby realizing wide spectrum and multi-dimensional detection functions. In order to reduce the temperature change of the detector caused by heat exchange with the air, the thermal infrared sensor usually adopts vacuum packaging, that is, the thermal unit is encapsulated in a closed structure in a vacuum environment, and the residual gas in the packaging process is removed by high temperature baking and other means to ensure a high vacuum degree in the closed structure. However, residual gas will inevitably exist in the vacuum packaging process, and the gas released by the device itself during its life due to leakage, degassing and the device itself during operation will reduce the vacuum life of the device. Therefore, a getter is usually introduced in the packaging process to enable it to maintain a good vacuum degree for a long time.

[0004] However, the current MIM artificial microstructure settings are to add a metal-dielectric-metal stacked structure directly above the top insulating layer of the pixel structure of the infrared detector. This greatly increases the thickness of the pixel structure, and the getter structure further set on this basis further increases the space occupancy, which is not only not conducive to the miniaturization of the device, but also introduces a very large additional heat capacity, resulting in a decrease in the temperature change of the component after absorbing the same amount of infrared rays, that is, a decrease in the sensitivity and accuracy of infrared detection.

[0005] Therefore, how to solve the problem that using MIM structure to improve infrared absorption rate in the prior art will lead to decreased detection sensitivity and accuracy, which is not conducive to device miniaturization and cannot take into account good resistance to vacuum aging is an urgent problem to be solved by technical personnel in this field. Utility Model Content

[0006] The purpose of the utility model is to provide a thermal infrared sensing unit and a thermal infrared detector to solve the problem in the prior art that the use of an MIM structure to improve the infrared absorption rate will introduce additional heat capacity, resulting in a decrease in detection sensitivity and accuracy, which is not conducive to device miniaturization and has poor resistance to vacuum aging.

[0007] In order to solve the above technical problems, the utility model provides a thermal infrared sensor unit, which includes, from bottom to top, a readout circuit substrate layer, a continuous metal layer, a first insulating layer, a thermistor sensing layer, a second insulating layer and a patterned metal layer;

[0008] The continuous metal layer is electrically isolated from the thermistor sensing layer by the first insulating layer, and the patterned metal layer is electrically isolated from the thermistor sensing layer by the second insulating layer;

[0009] The patterned metal layer and / or the continuous metal layer is a getter metal layer.

[0010] Optionally, in the thermosensitive infrared sensor unit, the continuous metal layer is a bridge electrode of the thermosensitive infrared sensor unit.

[0011] Optionally, the thermosensitive infrared sensor unit further includes a dielectric layer;

[0012] The dielectric layer is disposed between the second insulating layer and the patterned metal layer.

[0013] Optionally, in the thermosensitive infrared sensing unit, multiple layers of the dielectric layers are arranged between the second insulating layer and the patterned metal layer.

[0014] Optionally, in the thermal infrared sensing unit, the first insulating layer is a supporting insulating layer;

[0015] And / or the second insulating layer is a passivation insulating layer.

[0016] Optionally, in the thermal infrared sensing unit, the thermistor sensing layer includes at least one of a vanadium oxide layer, a silicon oxide layer and an amorphous silicon layer;

[0017] and / or

[0018] The second insulating layer includes at least one of a silicon dioxide layer, an aluminum oxide layer, a silicon nitride layer and a boron nitride layer.

[0019] Optionally, in the thermosensitive infrared sensor unit, the getter metal layer includes at least one of a metal titanium layer, a metal cobalt layer, a metal vanadium layer and a metal zirconium layer.

[0020] Optionally, in the thermosensitive infrared sensing unit, the patterned metal layer is a continuous covering layer including a hollow pattern;

[0021] or the patterned metal layer is a continuous covering layer including a groove pattern;

[0022] Or the patterned metal layer is a layer composed of a plurality of separately arranged resonant absorbers.

[0023] A thermal infrared detector, comprising a thermal infrared sensing unit as described above;

[0024] A plurality of the thermosensitive infrared sensor units are arranged in an array.

[0025] Optionally, in the thermal infrared detector, the thermal infrared detector is at least one of a metal packaged infrared detector, a ceramic packaged infrared detector, a wafer-level packaged infrared detector and a pixel-level packaged infrared detector.

[0026] The thermosensitive infrared sensing unit provided by the utility model includes, from bottom to top, a readout circuit substrate layer, a continuous metal layer, a first insulating layer, a thermistor sensing layer, a second insulating layer and a pattern metal layer; the continuous metal layer and the thermistor sensing layer are electrically isolated by the first insulating layer, and the pattern metal layer and the thermistor sensing layer are electrically isolated by the second insulating layer; the pattern metal layer and / or the continuous metal layer are an air-intake metal layer. The utility model sets the first insulating layer, the thermistor layer and the second insulating layer between two metal layers, acting as a dielectric in the MIM structure, thereby avoiding setting a dielectric for the MIM structure separately, greatly reducing the additional thickness introduced to increase the infrared absorption rate by introducing the MIM structure, which is not only conducive to the miniaturization of the device, but also reduces the additional heat capacity introduced, ensuring a higher detection sensitivity and detection accuracy. In addition, the continuous metal layer and / or the pattern metal layer are defined as an air-intake metal layer, so that the metal layer in the MIM structure has an air-intake effect, and the vacuum aging resistance is greatly improved without increasing the overall area and volume of the unit. The utility model also provides a thermal-sensitive infrared detector having the above beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the utility model or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A schematic structural diagram of a specific implementation of the thermal infrared sensor unit provided by the utility model;

[0029] Figure 2 A partial structural schematic diagram of another specific implementation of the thermal infrared sensor unit provided by the utility model;

[0030] Figure 3 A partial structural schematic diagram of another specific implementation of the thermal infrared sensor unit provided by the utility model;

[0031] Figure 4 A partial structural schematic diagram of another specific implementation of the thermal infrared sensor unit provided by the utility model;

[0032] Figure 5 A top view of the structure of a specific implementation of the thermal infrared sensor unit provided by the utility model;

[0033] Figure 6 The present invention provides a schematic structural diagram of a specific implementation of the thermal infrared detector.

[0034] In the figure, it includes 01-readout circuit substrate layer, 02-continuous metal layer, 03-first insulating layer, 04-thermistor sensing layer, 05-second insulating layer, 06-patterned metal layer, 07-dielectric layer, 10-thermal infrared sensing unit, and 20-thermal insulation microbridge. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0036] The core of the utility model is to provide a thermal infrared sensor unit, a structural diagram of a specific implementation method is shown in FIG. Figure 1 As shown, it is called the specific implementation mode 1, which includes, from bottom to top, a readout circuit substrate layer 01, a continuous metal layer 02, a first insulating layer 03, a thermistor sensing layer 04, a second insulating layer 05 and a patterned metal layer 06;

[0037] The continuous metal layer 02 is electrically isolated from the thermistor sensing layer 04 by the first insulating layer 03, and the patterned metal layer 06 is electrically isolated from the thermistor sensing layer 04 by the second insulating layer 05;

[0038] The patterned metal layer 06 and / or the continuous metal layer 02 is a getter metal layer.

[0039] The gettering metal layer is a layer composed of metal having gettering effect, such as a metal titanium layer, a metal cobalt layer, a metal vanadium layer, a metal zirconium layer, etc. The patterned metal layer 06 and / or the continuous metal layer 02 can be the above-mentioned various metal single substance layers or alloy layers.

[0040] In order to reduce the temperature change of the detector caused by heat exchange with the air, thermal infrared sensors usually use vacuum packaging, that is, the thermistor unit is packaged in a closed structure in a vacuum environment, and high-temperature baking and other means are used to remove residual gas in the packaging process to ensure a high vacuum degree in the closed structure. However, residual gas will inevitably exist in the vacuum packaging process, and the gas released by the device during its service life due to leakage, degassing and the device itself during operation will reduce the vacuum life of the device. Therefore, a getter is usually introduced in the packaging process to enable it to maintain a good vacuum degree for a long time. However, in the related art, since it is necessary to add a getter to the existing thermal infrared sensor unit, the space is further occupied, which is not conducive to the miniaturization of the device and introduces new heat capacity. In this preferred embodiment, the patterned metal layer 06 and / or the continuous metal layer 02 are improved to a metal layer with a gettering ability, so that the MIM structure has the functions of enhancing infrared absorption and absorbing gas. While improving the performance of the thermal infrared sensor unit, the anti-aging ability of the sensor unit is improved. The getter is arranged on the pixel structure without adding an additional position for the getter, which greatly reduces the packaging area and volume of the thermal infrared sensor unit. The metal continuous layer also uses a metal with a gettering function, which increases the contact area between the getter and the air and increases the vacuum life of the thermal infrared sensor unit.

[0041] Of course, in combination with the application scenario, the thickness of the continuous metal layer 02 is not less than the skin depth of the electromagnetic waves within the working band, so as to achieve a better absorption effect on the electromagnetic waves within the working band. Of course, the thickness of the continuous metal layer 02 should not be too large, which will increase the overall space occupancy of the device. It can be adjusted according to actual conditions.

[0042] Preferably, the continuous metal layer 02 is a bridge electrode of the thermosensitive infrared sensor unit.

[0043] The continuous metal layer 02 is arranged below the thermistor sensing layer 04 (that is, on the side closer to the readout circuit substrate layer 01, which will not be repeated below), and is not directly in contact with and electrically connected to the thermistor sensing layer 04, thus satisfying the conditions of a bridge electrode. In this preferred embodiment, the continuous metal layer 02 is directly used as the bridge electrode of the thermistor infrared sensing unit (or the bridge electrode of the thermistor infrared sensing unit is used as the continuous metal layer 02), which can further avoid the space occupation of the MIM structure, reduce the space occupation of the device, and reduce the introduction of heat capacity, thereby improving the detection sensitivity and detection accuracy of the device.

[0044] In addition, the thermal infrared sensing unit further includes a dielectric layer 07;

[0045] The dielectric layer 07 is disposed between the second insulating layer 05 and the patterned metal layer 06 .

[0046] In this preferred embodiment, a dielectric layer 07 is provided below the patterned metal layer 06 , and the staff can adjust the material, thickness, pattern, etc. of the dielectric layer 07 to achieve a better absorption effect on electromagnetic waves within the working band.

[0047] Of course, the dielectric layer 07 can be a continuous dielectric layer 07 with a flat surface, or a patterned dielectric layer 07, which can be adjusted according to actual conditions, and the utility model does not limit it here. The shape pattern of the dielectric layer 07 can be consistent with the pattern metal layer 06, and the pattern unit in the pattern metal layer 06 can form a resonant absorber with the corresponding pattern unit in the dielectric layer 07.

[0048] Furthermore, multiple layers of dielectric layers 07 are disposed between the second insulating layer 05 and the patterned metal layer 06 .

[0049] By setting multiple layers of the dielectric layer 07, the material, thickness, pattern, etc. of each dielectric layer 07 can be adjusted individually, which greatly increases the flexibility of setting the dielectric layer 07, that is, improves the flexibility of setting the working band and achieves better absorption effect.

[0050] As a preferred embodiment, the first insulating layer 03 is a supporting insulating layer;

[0051] And / or the second insulating layer 05 is a passivation insulating layer.

[0052] In this preferred embodiment, the first insulating layer 03 between the continuous metal layer 02 and the thermistor sensing layer 04 is defined as a supporting insulating layer, that is, an insulating layer that plays a supporting role, and can be made of rigid material to improve the overall structural strength of the thermistor sensing unit and improve the working stability of the thermistor sensing unit.

[0053] The second insulating layer 05 between the patterned metal layer 06 and the thermistor sensing layer 04 can be further defined as a passivation insulating layer. The insulating layer of the passivation material is generally dense and has good oxidation resistance. It can provide good protection for the thermistor sensing layer 04 and improve the working stability of the thermal infrared sensing unit.

[0054] Wherein, the thermistor sensing layer 04 includes at least one of a vanadium oxide layer, a silicon oxide layer and an amorphous silicon layer;

[0055] and / or

[0056] The second insulating layer 05 includes at least one of a silicon dioxide layer, an aluminum oxide layer, a silicon nitride layer and a boron nitride layer.

[0057] The vanadium oxide layer, the silicon oxide layer and the amorphous silicon layer are all material layers with a high linear correlation between temperature and resistivity change within the working temperature of the thermistor infrared sensor unit. After receiving infrared rays in the working band, they can be reflected in the resistivity change in a timely manner. Of course, other types of material layers can also be selected as the thermistor sensing layer 04 according to actual needs, and the utility model does not limit this. Similarly, the silicon dioxide layer, the aluminum oxide layer, the silicon nitride layer and the boron nitride layer have dense structures and good chemical stability. While playing an insulating role, they can also protect other structural layers below. Therefore, they can be used as the preferred material layer of the second insulating layer 05. Of course, other material layers can also be selected as the second insulating layer 05, and the utility model does not limit this.

[0058] Furthermore, the thermistor sensing layer 04 is a silicon oxide layer and / or an amorphous silicon layer;

[0059] The second insulating layer 05 is a silicon dioxide layer and / or a silicon nitride layer.

[0060] The resistivity of the silicon oxide layer and the amorphous silicon layer will change greatly with temperature, and they can perform the function of the thermistor sensing layer 04 very well. On the basis of these two types of thermistor sensing layers 04, simple surface treatment and epitaxial layer growth can be performed to obtain the silicon dioxide layer and / or the silicon nitride layer as the second insulating layer 05. The process is simple and the cost is low. The thermistor sensing layer 04 is tightly combined with the second insulating layer 05, and the dense silicon dioxide layer and / or silicon nitride layer can play a good protective role on the thermistor sensing layer 04.

[0061] As a specific implementation, the getter metal layer includes at least one of a metal titanium layer, a metal cobalt layer, a metal vanadium layer and a metal zirconium layer. The above four metal layers are metal layers with good gettering effect and good plasticity. The getter metal layer can be a metal single substance layer of each of the above metals, or a corresponding alloy layer, which can be selected according to actual conditions.

[0062] Furthermore, the getter metal layer is a metal titanium layer.

[0063] Metal titanium is a high-loss metal material that can achieve a higher infrared absorption rate. Using the metal titanium layer as the pattern metal layer 06 and / or the continuous metal layer 02 can further improve the sensitivity and accuracy of the thermosensitive infrared sensor unit.

[0064] As a specific implementation, the patterned metal layer 06 is a continuous covering layer including a hollow pattern;

[0065] Or the patterned metal layer 06 is a continuous covering layer including a groove pattern;

[0066] Or the patterned metal layer 06 is a layer composed of a plurality of separately arranged resonant absorbers.

[0067] This specific embodiment provides three specific structures of the patterned metal layer 06, which can further improve the flexibility of setting the working band of the thermal infrared sensor unit, and at the same time improve the infrared absorption effect according to actual conditions. Figure 2 , Figure 3 and Figure 4 The above three figures are side views of three types of patterned metal layers 06 in this specific implementation mode. The dotted lines are the blocked hollowed-out parts. Figure 2 Corresponding to the case of "continuous covering layer including hollow pattern", Figure 3 Corresponding to the case of "continuous covering layer including groove pattern", Figure 4 This corresponds to the case of "a layer consisting of a plurality of separately arranged resonant absorbers".

[0068] As a specific implementation, the thickness of the continuous metal layer 02 is in the range of 0.05 micrometers to 0.3 micrometers, the thickness of the dielectric layer 07 is in the range of less than 1 micrometer (the dielectric layer 07 may not be provided), and the thickness of the pattern metal layer 06 is in the range of 0.05 micrometers to 0.3 micrometers; the pattern is arranged periodically in the pattern metal layer 06, and the side length P of each period can be selected in the range of 2 micrometers to 30 micrometers. The pattern is a disk, and the radius R of the disk is in the range of 0.3 micrometers to 20 micrometers. The corresponding structural top view is as follows Figure 5 Using CST software simulation calculation based on the finite integration method in the time domain, the absorption spectrum of this specific embodiment is as shown in Figure 5 shown.

[0069] The thermal infrared sensing unit provided by the utility model comprises, from bottom to top, a readout circuit substrate layer 01, a continuous metal layer 02, a first insulating layer 03, a thermistor sensing layer 04, a second insulating layer 05 and a patterned metal layer 06; the continuous metal layer 02 is electrically isolated from the thermistor sensing layer 04 by the first insulating layer 03, and the patterned metal layer 06 is electrically isolated from the thermistor sensing layer 04 by the second insulating layer 05; the patterned metal layer 06 and / or the continuous metal layer 02 are air-intake metal layers. The utility model arranges the first insulating layer 03, the thermistor layer and the second insulating layer 05 between two metal layers, acting as a dielectric in the MIM structure, thereby avoiding the need to arrange a dielectric separately for the MIM structure, greatly reducing the additional thickness introduced to increase the infrared absorption rate of the MIM structure, which is not only conducive to the miniaturization of the device, but also reduces the additional heat capacity introduced, ensuring a higher detection sensitivity and detection accuracy. In addition, the continuous metal layer 02 and / or the patterned metal layer 06 are defined as an air-absorbing metal layer, so that the metal layer in the MIM structure also has an air-absorbing function, which greatly improves the anti-vacuum aging performance without increasing the overall area and volume of the unit.

[0070] The following is a method for manufacturing the thermosensitive infrared sensor unit of the utility model in combination with actual production, comprising:

[0071] Step 1: prepare a sacrificial layer on the integrated readout circuit substrate layer 01 using a polyimide material or an oxidized porous silicon material, wherein the sacrificial layer covers the upper surface of the readout circuit substrate layer 01 .

[0072] Step 2: preparing a gettering continuous metal layer 02 on the sacrificial layer. The gettering continuous metal layer 02 may be made of titanium, cobalt, vanadium, zirconium, etc.

[0073] Step three: using silicon nitride material to prepare the supporting insulating layer on the gettering continuous metal layer 02.

[0074] Step 4: forming a thermistor photoresist pattern on the supporting insulating layer, growing a thermistor material, and stripping the thermistor photoresist pattern to obtain the thermistor sensing layer 04, wherein the thermistor material is vanadium oxide, silicon oxide or amorphous silicon.

[0075] Step 5: Prepare a passivation insulating layer on the thermistor sensing layer 04, wherein the passivation insulating layer is made of silicon dioxide, aluminum oxide, silicon nitride or boron nitride.

[0076] Step six: prepare a dielectric layer 07 on the passivation insulating layer. The dielectric layer 07 may be made of silicon, germanium, silicon nitride, aluminum oxide, zinc selenide or zinc sulfide.

[0077] Step seven: preparing a getter pattern metal layer 06 on the dielectric layer 07. The getter pattern metal layer 06 may be made of titanium, cobalt, vanadium, zirconium, etc.

[0078] Step eight, etching the sacrificial layer.

[0079] Step nine: vacuum packaging.

[0080] Step 10: Apply bias current or place in a high temperature environment to destroy the surface oxide layer of the getter continuous metal layer 023 and the getter pattern metal layer 06 to activate them, and the infrared detector is prepared.

[0081] The utility model also provides a thermal infrared detector, a structural schematic diagram of a specific implementation method thereof is shown in FIG. Figure 6 As shown, it is called the second specific implementation mode, the thermal infrared detector includes any one of the thermal infrared sensor units 10 described above;

[0082] A plurality of the thermal infrared sensor units 10 are arranged in an array.

[0083] The thermosensitive infrared detector provided by the present invention corresponds to the thermosensitive infrared sensor unit 10 in the foregoing text. The specific technical details can be referred to in the foregoing text, and the present invention will not elaborate on them one by one.

[0084] Of course, the thermal infrared detector is at least one of a metal packaged infrared detector, a ceramic packaged infrared detector, a wafer-level packaged infrared detector, and a pixel-level packaged infrared detector. The thermal infrared detector provided by the utility model has excellent compatibility, is compatible with a variety of packaging methods, and has good versatility.

[0085] In the thermosensitive infrared detector, adjacent thermosensitive infrared sensing units 10 are thermally isolated by thermal insulation microbridges 20. By providing the thermal insulation microbridges 20, the thermosensitive infrared sensing units 10 will not interfere with each other, which greatly improves the detection accuracy.

[0086] The thermosensitive infrared detector provided by the utility model comprises a thermosensitive infrared sensor unit 10 as described in any one of the above; a plurality of the thermosensitive infrared sensor units 10 are arranged in an array. The thermosensitive infrared sensor unit 10 comprises, from bottom to top, a readout circuit substrate layer 01, a continuous metal layer 02, a first insulating layer 03, a thermistor sensing layer 04, a second insulating layer 05 and a pattern metal layer 06; the continuous metal layer 02 and the thermistor sensing layer 04 are electrically isolated by the first insulating layer 03, and the pattern metal layer 06 and the thermistor sensing layer 04 are electrically isolated by the second insulating layer 05. The utility model arranges the first insulating layer 03, the thermistor layer and the second insulating layer 05 between two metal layers, acting as a dielectric in the MIM structure, thereby avoiding the need to arrange a dielectric separately for the MIM structure, greatly reducing the additional thickness introduced by the MIM structure to increase the infrared absorption rate, which is not only conducive to the miniaturization of the device, but also reduces the additionally introduced heat capacity, ensuring a higher detection sensitivity and detection accuracy.

[0087] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0088] It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0089] The above is a detailed introduction to the thermal infrared sensor unit and thermal infrared detector provided by the utility model. This article uses specific examples to illustrate the principle and implementation method of the utility model. The description of the above embodiment is only used to help understand the method and core idea of ​​the utility model. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the utility model, the utility model can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the utility model.

Claims

1. A thermal infrared sensor unit, characterized in that: From bottom to top, it includes a readout circuit substrate layer (01), a continuous metal layer (02), a first insulating layer (03), a thermistor sensing layer (04), a second insulating layer (05) and a patterned metal layer (06); The continuous metal layer (02) and the thermistor sensing layer (04) are electrically isolated by the first insulating layer (03), and the patterned metal layer (06) and the thermistor sensing layer (04) are electrically isolated by the second insulating layer (05); The patterned metal layer (06) and / or the continuous metal layer (02) is a getter metal layer.

2. The thermosensitive infrared sensor unit according to claim 1, characterized in that: The continuous metal layer (02) is a bridge electrode of the thermosensitive infrared sensor unit.

3. The thermosensitive infrared sensor unit according to claim 1, characterized in that: Also includes a dielectric layer (07); The dielectric layer (07) is arranged between the second insulating layer (05) and the patterned metal layer (06).

4. The thermosensitive infrared sensor unit according to claim 3, characterized in that: Multiple layers of the dielectric layer (07) are arranged between the second insulating layer (05) and the patterned metal layer (06).

5. The thermosensitive infrared sensor unit according to claim 1, characterized in that: The first insulating layer (03) is a supporting insulating layer; And / or the second insulating layer (05) is a passivation insulating layer.

6. The thermosensitive infrared sensor unit according to claim 1, characterized in that: The thermistor sensing layer (04) comprises at least one of a vanadium oxide layer, a silicon oxide layer and an amorphous silicon layer; and / or The second insulating layer (05) comprises at least one of a silicon dioxide layer, an aluminum oxide layer, a silicon nitride layer and a boron nitride layer.

7. The thermosensitive infrared sensor unit according to claim 1, characterized in that: The getter metal layer includes at least one of a metal titanium layer, a metal cobalt layer, a metal vanadium layer and a metal zirconium layer.

8. The thermosensitive infrared sensor unit according to any one of claims 1 to 7, characterized in that: The patterned metal layer (06) is a continuous covering layer including a hollow pattern; Or the patterned metal layer (06) is a continuous covering layer including a groove pattern; Or the patterned metal layer (06) is a layer composed of a plurality of separately arranged resonant absorbers.

9. A thermal infrared detector, characterized in that: The thermal infrared detector comprises a thermal infrared sensing unit as claimed in any one of claims 1 to 8; A plurality of the thermosensitive infrared sensor units are arranged in an array.

10. The thermal infrared detector according to claim 9, characterized in that: The thermosensitive infrared detector is at least one of a metal packaged infrared detector, a ceramic packaged infrared detector, a wafer-level packaged infrared detector and a pixel-level packaged infrared detector.

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