Conveying chamber of deposition process equipment platform

Abstract

The utility model provides a transfer chamber of a deposition process equipment platform. The transfer chamber is located between a front end module in a normal pressure state and a buffer chamber of a platform process chamber. At least two wafer operating tables are arranged in the transfer chamber; the wafer operation table is provided with a lower-layer wafer bearing table, an upper-layer wafer bearing frame and a hollow layer located between the upper-layer wafer bearing frame and the lower-layer wafer bearing table; a plurality of heat conduction columns, a plurality of mounting holes and at least three liftable columns are arranged on the lower wafer bearing table; the plurality of heat conduction columns are correspondingly arranged in the plurality of mounting holes and are slightly higher than the plane of the lower-layer wafer bearing table main body, and at least one through hole is formed in each heat conduction column. The through hole is formed in the heat conduction column, so that the flow guide area of the through hole and the mounting hole is increased, the acting force generated on the heat conduction column when gas and liquid are pumped away is reduced, and the position change of the heat conduction column in the pumping process is prevented; therefore, the wafer is prevented from being broken due to extrusion between the wafer and the upper wafer bearing frame when the wafer is conveyed to the buffer chamber.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a transfer chamber of a deposition process equipment platform. Background Art

[0002] Thin film deposition technology is one of the core processes in semiconductor manufacturing. It involves alternately stacking different types of thin films on the wafer surface through physical or chemical methods, such as insulating dielectric films (such as SiO2, SiN) and metal conductive films (such as Al, Cu), etc. The thin film deposition process equipment generally includes a front-end module, a transfer chamber, a buffer chamber, and a thin film process chamber. The front-end module is in an atmospheric pressure environment, the buffer chamber is in a vacuum environment, the transfer chamber is a chamber that converts between vacuum and atmospheric pressure, and the wafer enters and exits each thin film process chamber from the buffer chamber through the transfer chamber.

[0003] The transfer chamber generally includes a lower wafer carrier and an upper wafer carrier frame, and there is a hollow layer between the lower wafer carrier and the upper wafer carrier frame. The wafer transferred from the front-end module is first placed on the lower wafer carrier, and the lower wafer carrier bears the wafer to preheat the wafer. After the preheating is completed, the wafer is transferred to the buffer chamber through the upper wafer carrier frame. During the process of the wafer being transferred from the lower wafer carrier to the upper wafer carrier frame, it may be squeezed by the upper wafer carrier frame, resulting in wafer fragmentation. Summary of the Utility Model

[0004] To solve the above technical problems, the utility model provides a transfer chamber of a deposition process equipment platform, which is located between the front-end module in an atmospheric pressure state and the buffer chamber of the platform process chamber. The front-end module is provided with a manipulator, and the manipulator transfers the wafer between the front-end module and the buffer chamber. At least two wafer operation tables, two wafer transfer windows corresponding to the wafer operation tables, and a process processing window facing the buffer chamber are arranged in the transfer chamber. The wafer operation table is provided with a lower wafer carrier, an upper wafer carrier frame, and a hollow layer located between the upper wafer carrier frame and the lower wafer carrier. A plurality of heat conducting columns, a plurality of mounting holes, and at least three liftable columns are arranged on the lower wafer carrier. The plurality of heat conducting columns are correspondingly arranged in the plurality of mounting holes, slightly protruding above the main plane of the lower wafer carrier, and at least one through hole is arranged in the heat conducting column. The manipulator transports the wafer to the hollow layer of the wafer operation table through the wafer transfer window. After the three liftable columns rise and catch the wafer, they descend to the main plane of the lower wafer carrier, so that the wafer contacts the tops of the plurality of heat conducting columns.

[0005] Preferably, the heat conducting column is cylindrical, and the through hole is arranged at the central position.

[0006] Preferably, there is 1 through-hole provided in the heat-conducting column.

[0007] Preferably, the transfer chamber is provided with an air outlet, and a vacuum pump connected to the outside of the deposition process equipment platform reduces the pressure of the transfer chamber through the air outlet.

[0008] Preferably, the heat-conducting column is in interference fit with the mounting hole.

[0009] Preferably, the diameter of the heat-conducting column is 5 mm, and the diameter of the through-hole is 3 mm.

[0010] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0011] In the transfer chamber of a deposition process equipment platform provided by the present invention, by providing a through-hole in the heat-conducting column, the flow area between it and the mounting hole is increased, the acting force generated on the heat-conducting column when the gas-liquid is pumped away is reduced, the position change of the heat-conducting column during the suction process is prevented, and further the wafer is prevented from tilting on it, thereby preventing the wafer from being broken due to extrusion between the wafer and the upper wafer carrier during wafer transfer to the buffer chamber, and reducing the probability of wafer breakage during wafer transfer. Description of the Drawings

[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other drawings based on these drawings without creative efforts.

[0013] Figure 1 is a schematic structural diagram of a heat-conducting column in the prior art;

[0014] Figure 2 is a schematic structural diagram of the heat-conducting column mounted on the lower wafer carrier in the prior art;

[0015] Figures 3a to 3f is a schematic structural diagram of the working process of the transfer chamber in the prior art;

[0016] Figure 4 is a schematic structural diagram of the deposition process equipment platform;

[0017] Figure 5 is a schematic structural diagram of the lower wafer carrier provided by an embodiment of the present invention;

[0018] Figure 6 is a schematic structural diagram of the heat-conducting column provided by an embodiment of the present invention;

[0019] Figure 7 It is a top view of a heat conduction column provided by an embodiment of the present utility model;

[0020] Figure 8 It is a schematic structural diagram of the heat conduction column installed on the lower wafer carrier provided by an embodiment of the present utility model;

[0021] Figures 9a to 9f It is a schematic structural diagram of the working process of a transfer chamber provided by an embodiment of the present utility model;

[0022] Explanation of reference numerals:

[0023] 1 - Front-end module;

[0024] 101 - Manipulator;

[0025] 2 - Transfer chamber;

[0026] 201 - Wafer operation table;

[0027] 2011 - Lower wafer carrier;

[0028] 20111 - Mounting hole;

[0029] 2012 - Heat conduction column;

[0030] 2012′ - Heat conduction column;

[0031] 20121 - Through hole;

[0032] 20122 - Arc surface;

[0033] 2013 - Liftable column;

[0034] 2014 - Upper wafer carrier;

[0035] 3 - Buffer chamber;

[0036] 4 - Platform process chamber;

[0037] 5 - Wafer. Detailed implementation manners

[0038] As described in the background art, in the transfer chamber of a deposition process equipment platform, during the process of transferring a wafer from the lower wafer carrier to the upper wafer carrier, the wafer may be squeezed by the upper wafer carrier, resulting in wafer fragmentation. After analysis, the specific reason is, please refer to Figure 1 and Figure 2, the lower wafer carrier 2011 is provided with a plurality of heat conducting columns 2012 and a plurality of liftable columns. The heat conducting columns 2012 are arranged in the mounting holes 20111 of the lower wafer carrier 2011. Since the gap between the heat conducting column 2012 and the mounting hole 20111 is very small and the flow guiding effect is insufficient, when the transfer chamber 2 is evacuated after wet cleaning of the transfer chamber, the residual gas-liquid will also exert an outward force on the heat conducting column 2012 as it is sucked outwards, resulting in the heat conducting column 2012 being offset or pulled out of the mounting hole 20111. Please refer to Figure 3a . During wafer transfer, the robot 101 sends the wafer 5 from the front end module to the hollow layer of the transfer chamber. Please refer to Figure 3b ; Please refer to Figure 3c , then the liftable column 2013 rises and holds the wafer 5 higher than the robot 101; Please refer to Figure 3d , the robot 101 returns to the initial position; Please refer to Figure 3e , the liftable column 2013 drives the wafer 5 to descend and places it on a plurality of heat conducting columns 2012 of the lower wafer carrier 2011. Since the heat conducting column 2012 is offset or pulled out of the mounting hole 20111, the wafer 5 placed on the heat conducting column 2012 will be tilted, that is, it is no longer in a horizontal state. Therefore, during the process of transporting the wafer 5 to the buffer chamber, a plurality of liftable columns 2013 lift the tilted wafer 5, and the end of the wafer 5 higher than the horizontal plane will be squeezed against the upper wafer carrier 2014, resulting in the wafer 5 being broken. Please refer to Figure 3f .

[0039] To solve the above technical problems, the present utility model provides a transfer chamber of a deposition process equipment platform, which is located between the front end module in the atmospheric pressure state and the buffer chamber of the platform process chamber. The front end module is provided with a robot, and the robot transfers wafers between the front end module and the buffer chamber; at least two wafer operation tables, two wafer transfer windows corresponding to the wafer operation tables, and a process processing window facing the buffer chamber are arranged in the transfer chamber; the wafer operation table is provided with a lower wafer carrier, an upper wafer carrier, and a hollow layer located between the upper wafer carrier and the lower wafer carrier; a plurality of heat conducting columns, a plurality of mounting holes, and at least three liftable columns are arranged on the lower wafer carrier; the plurality of heat conducting columns are correspondingly arranged in the plurality of mounting holes, slightly protruding above the main plane of the lower wafer carrier, and at least one through hole is arranged in the heat conducting column; the robot transports the wafer to the hollow layer of the wafer operation table through the wafer transfer window; after the three liftable columns rise and catch the wafer, they descend to the main plane of the lower wafer carrier, so that the wafer contacts the tops of the plurality of heat conducting columns.

[0040] The present utility model increases the flow area between it and the mounting hole by providing a through hole in the heat conducting column, reduces the acting force on the heat conducting column when the gas or liquid is pumped away, prevents the heat conducting column from changing its position during the suction process, further prevents the wafer from tilting thereon, thereby preventing the wafer from being broken due to extrusion between the wafer and the upper wafer carrier when transferring the wafer to the buffer chamber, and reduces the probability of the wafer being broken during the wafer transfer process.

[0041] To make the above objects, features and beneficial effects of the present utility model more obvious and understandable, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0042] Please refer to Figures 4 to 9f , this embodiment provides a transfer chamber 2 of a deposition process equipment platform, which is located between the front-end module 1 and the buffer chamber 3 of the platform process chamber 4. The front-end module 1 is in an atmospheric pressure environment, the buffer chamber 3 is in a vacuum environment, and the transfer chamber 2 is a chamber that converts between vacuum and atmospheric pressure. The front-end module 1 is provided with a manipulator 101, and the manipulator 101 transfers wafers between the front-end module 1 and the buffer chamber 3.

[0043] At least two wafer operation tables 201, at least two wafer transfer windows and at least two process processing windows are provided in the transfer chamber 2. The wafer operation tables 201, the wafer transfer windows and the process processing windows are arranged in one-to-one correspondence, that is, one wafer operation table 201 corresponds to one wafer transfer window and one process processing window. The wafer transfer window faces the front-end module 1, the process processing window faces the buffer chamber 3, and the wafer operation table 201 is located between the corresponding wafer transfer window and the process processing window.

[0044] The wafer operation table 201 is provided with a lower wafer carrier 2011, an upper wafer carrier 2014 and a hollow layer located between the upper wafer carrier 2014 and the lower wafer carrier 2011. The wafers transferred from the front-end module 1 are first placed on the lower wafer carrier 2011, and the lower wafer carrier 2011 is used to carry the wafers and preheat the wafers. After the preheating is completed, the wafers are transferred to the buffer chamber 3 by the upper wafer carrier.

[0045] Specifically, please refer to Figures 5 to 8, a plurality of heat conducting columns 2012', a plurality of mounting holes 20111 and at least three liftable columns 2013 are provided on the lower wafer carrier 2011. The plurality of mounting holes 20111 are spaced apart and opened on the main plane of the lower wafer carrier 2011. The plurality of heat conducting columns 2012' are respectively arranged in the plurality of mounting holes 20111 and slightly protrude from the main plane of the lower wafer carrier 2011. The purpose is to reduce the contact area between the back surface of the wafer and the main plane of the lower wafer carrier 2011 when carrying the wafer, reduce the probability of the back surface of the wafer being contaminated, and reduce the influence of thermal stress.

[0046] At least one through hole 20121 is provided in the heat conducting column 2012'. The through hole 20121 penetrates the heat conducting column 2012' along the axial direction of the heat conducting column 2012', which plays a role in conducting the outside of the heat conducting column 2012' to the bottom of the mounting hole 20111, increasing the flow area between the mounting hole 20111 and the outside of the heat conducting column 2012'. Then, when sucking the gas-liquid in the mounting hole 20111, the gas-liquid in the mounting hole 20111 will be sucked away along the through hole 20121. Therefore, the force on the heat conducting column 2012' when the gas-liquid is sucked away is reduced, preventing the position change of the heat conducting column 2012' during the suction process, further preventing the wafer from tilting on it, and thus preventing the wafer from being squeezed by the upper wafer carrier 2014 when transferring the wafer to the buffer chamber 3, which may cause the wafer to break, reducing the probability of the wafer 5 breaking during the wafer transfer process.

[0047] In this embodiment, the shape, size of the heat conducting column 2012', the number and size of the through holes 20121 are not limited and can be set according to actual use requirements. The through hole 20121 can be one or multiple. If the through hole 20121 is one, preferably the through hole 20121 is located at the center of the heat conducting column 2012'; if the through hole 20121 is multiple, preferably the multiple through holes 20121 are evenly distributed on the heat conducting column 2012'. As an embodiment, the heat conducting column 2012' is cylindrical, with a through hole 20121 provided at its center position. The diameter of the heat conducting column 2012' is 5 mm, and the diameter of the through hole 20121 is 3 mm.

[0048] The lower end of the heat conducting column 2012' is inserted into the mounting hole 20111. In this embodiment, the fit between the heat conducting column 2012' and the mounting hole 20111 is not specifically limited. For example, it can be interference fit, transition fit or clearance fit. To further increase the stability of the heat conducting column 2012' on the mounting hole 20111, preferably the heat conducting column 2012' and the mounting hole 20111 are in interference fit.

[0049] Further, the lower end surface of the heat conducting column 2012' is an arc surface 20122 convex towards the bottom surface of the mounting hole 20111, aiming to ensure that the through hole 20121 communicates with the bottom of the mounting hole 20111, facilitating the extraction of the water in the mounting hole 20111 from the through hole 20121.

[0050] Further, the transfer chamber 2 is provided with an air outlet, and a vacuum pump externally connected to the deposition process equipment platform reduces the pressure of the transfer chamber 2 through the air outlet.

[0051] Working principle of the transfer chamber 2 of the deposition process equipment platform:

[0052] a. Since a through hole 20121 is provided in the heat conducting column 2012', when the transfer chamber 2 is wet cleaned and then evacuated, the gas-liquid is sucked out through the through hole 20121 as it is being externally sucked. Therefore, the position of the heat conducting column 2012' remains unchanged. Please refer to 9a;

[0053] b. The manipulator 101 transports the wafer 5 to the hollow layer of the corresponding wafer operating table 201 through the wafer transfer window. Please refer to 9b;

[0054] c. Please refer to 9c. After the three liftable columns 2013 rise and catch the wafer 5, the manipulator 101 returns to the initial position. Please refer to 9d;

[0055] d. Please refer to 9e. The liftable column 2013 drives the wafer 5 to descend to the lower wafer carrier 2011, making the wafer 5 contact the tops of a number of heat conducting columns 2012', and then the liftable column 2013 returns to the initial position;

[0056] e. Please refer to 9f. The liftable column 2013 rises and holds up the wafer 5, making it slightly lower than the upper wafer carrier 2014;

[0057] f. Finally, the handling robot takes away the wafer 5 to the buffer chamber 3.

[0058] In summary, the present utility model increases the diversion area between the heat conducting column 2012' and the mounting hole 20111 by providing a through hole 20121 in the heat conducting column 2012', reduces the acting force on the heat conducting column 2012' when the gas-liquid is sucked away, prevents the position change of the heat conducting column 2012' during the suction process, thereby preventing the wafer 5 from tilting on it, and further preventing the wafer 5 from being squeezed by the upper wafer carrier 2014 when transferring the wafer to the buffer chamber 3, which may cause the wafer 5 to break, and reducing the probability of the wafer 5 breaking during the wafer transfer process.

[0059] Although the present utility model is disclosed as above, the present utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present utility model. Therefore, the protection scope of the present utility model shall be subject to the scope defined by the claims.

Claims

1. A transfer chamber of a deposition process equipment platform, located between a front-end module in a normal pressure state and a buffer chamber of a platform process chamber, wherein the front-end module is provided with a manipulator, and the manipulator transfers wafers between the front-end module and the buffer chamber; characterized in that: At least two wafer operating tables are arranged in the transfer chamber, and two wafer transfer windows corresponding to the wafer operating tables and a process processing window facing the buffer chamber; the wafer operating table is provided with a lower wafer supporting table, an upper wafer supporting rack and a hollow layer located between the upper wafer supporting rack and the lower wafer supporting table; a plurality of heat-conducting columns, a plurality of mounting holes and at least three lifting columns are arranged on the lower wafer supporting table; the plurality of heat-conducting columns are arranged correspondingly in the plurality of mounting holes, slightly higher than the main plane of the lower wafer supporting table, and at least one through hole is arranged in the heat-conducting columns; the robot transports the wafer to the hollow layer of the wafer operating table through the wafer transfer window; the three lifting columns are raised, and after receiving the wafer, they are descended to the main plane of the lower wafer supporting table, so that the wafer contacts the top of the plurality of heat-conducting columns.

2. The transfer chamber according to claim 1, characterized in that: The heat-conducting column is cylindrical, and the through hole is arranged at the center.

3. The transfer chamber according to claim 1, characterized in that: The heat-conducting column is provided with one through hole.

4. The transfer chamber according to claim 1, characterized in that: The transfer chamber is provided with an air outlet, and a vacuum pump externally connected to the deposition process equipment platform reduces the pressure of the transfer chamber through the air outlet.

5. The transfer chamber according to claim 1, characterized in that: The heat-conducting column is interference-fitted with the mounting hole.

6. The transfer chamber according to claim 1, characterized in that: The diameter of the heat-conducting column is 5 mm, and the diameter of the through hole is 3 mm.

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