Crystal growing device

Abstract

The utility model relates to the technical field of crystal growth, in particular to a crystal growth device, which comprises a growth furnace, a crystal down-leading mechanism and a lifting mechanism, the growth furnace comprises a heat insulation body and a heating element, the heat insulation body is provided with a high-temperature cavity and an opening communicated with the high-temperature cavity, the opening faces the ground, and the heating element is arranged in the high-temperature cavity; the crucible is used for containing raw materials, and the bottom surface of the crucible is conical; the crystal down-leading mechanism comprises a cooler, the cooler comprises a cooling plate and a drainage ring, the cooling plate is attached to the bottom face of the crucible, the drainage ring is arranged on the side, away from the crucible, of the cooling plate, a drainage channel is defined by the drainage ring and the cooling plate, and cooling liquid flows in from one end of the drainage channel and flows out from the other end of the drainage channel; the drainage channel is directly formed between the cooling plate and the drainage ring, and the crucible is arranged on the cooling plate, so that cooling liquid in the drainage channel can directly take away heat conducted to the cooling plate by the crucible, further accurate, rapid and large-gradient cooling is realized, and the crystal quality is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth, in particular to a crystal growth device. Background Art

[0002] When growing halide crystals, the currently commonly used crystal growth technology by the descending method is adopted. However, in the crystal growth technology by the descending method, in order to prepare large-size halide single crystals, the growth gradient is usually required to be greater than 20 °C / cm. Therefore, the heat conduction capacity of the cooling platform is required to be extremely high.

[0003] The prior patent CN202322787521.3 discloses a cooling device for growing halide crystals. Among them, one end of a heat conduction frame bears a high-temperature resistant container, and the end of the heat conduction frame far from the high-temperature resistant container is clamped on a cooling frame. The heat of the high-temperature resistant container is transferred to the cooling frame through the heat conduction frame, and then the cooling frame dissipates heat. Since the heat conduction frame is provided in this application, the heat transfer efficiency of the high-temperature resistant container to the cooling frame is reduced, which in turn leads to the problem of lag in the temperature adjustment of crystal growth in the high-temperature resistant container and poor crystal quality. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a crystal growth device to solve the problem that in the related technology, the heat of the high-temperature resistant container is transferred to the cooling frame through the heat conduction frame, and then the cooling frame dissipates heat. Since the heat conduction frame is provided in this application, the heat transfer efficiency of the high-temperature resistant container to the cooling frame is reduced, which in turn leads to the problem of lag in the temperature adjustment of crystal growth in the high-temperature resistant container and poor crystal quality.

[0005] The utility model provides a crystal growth device, which includes:

[0006] A growth furnace, including a heat insulation body and a heating element. The heat insulation body is provided with a high-temperature cavity and an open mouth communicating with the high-temperature cavity. The open mouth faces the ground, and the heating element is arranged in the high-temperature cavity;

[0007] A crucible for containing raw materials, and the bottom surface of the crucible is conical;

[0008] A crystal drawing-down mechanism, including a cooler. The crucible is placed above the cooler. The cooler includes a cooling plate and a drainage ring. The cooling plate is conical and is attached to the bottom surface of the crucible. The drainage ring is arranged coaxially and at an interval with the cooling plate. The drainage ring is located on the side of the cooling plate away from the crucible and encloses a drainage channel with the cooling plate. The coolant flows into one end of the drainage channel and flows out from the other end of the drainage channel;

[0009] The lifting mechanism drives the crucible and the cooler to extend into the high-temperature chamber from the open end in sequence and has a first state and a second state along the axis of the open end. In the first state, the crystal drawing mechanism is fixed relative to the heat insulator, and in the second state, the crystal drawing mechanism slides relative to the heat insulator.

[0010] As a preferred technical solution of the crystal growth device, the large diameter of the cooling plate is greater than the large diameter of the bottom surface of the crucible.

[0011] As a preferred technical solution of the crystal growth device, the cooler further includes a sealing plate, an outer tube, a partition tube, and an inner tube that are sequentially sleeved at intervals from outside to inside. One end of the outer tube, one end of the partition tube, and one end of the inner tube are respectively hermetically connected to the sealing plate. The other end of the outer tube and the other end of the inner tube are respectively hermetically connected to the cooling plate coaxially. The other end of the partition tube is hermetically connected to the drainage ring, and the drainage ring is respectively arranged at intervals with the corresponding inner tube and outer tube. The sealing plate is provided with a first hole and a second hole, one of the first hole and the second hole is communicated with the gap between the outer tube and the partition tube, and the other is communicated with the gap between the inner tube and the partition tube.

[0012] As a preferred technical solution of the crystal growth device, the sealing plate further includes a third hole, and the third hole is communicated with the inner tube;

[0013] The crystal drawing mechanism further includes a thermocouple. The thermocouple passes through the third hole and extends into the inner tube, and the thermocouple abuts against the cooling plate.

[0014] As a preferred technical solution of the crystal growth device, the lifting mechanism includes a bottom plate, a lifting plate, and a driving component. The bottom plate is spaced from and relatively fixed to the heat insulator. The bottom plate faces the open end. The driving component is arranged on the bottom plate and drives the lifting plate to slide along the axis of the open end. The crystal drawing mechanism is arranged on the lifting plate.

[0015] As a preferred technical solution of the crystal growth device, the lifting mechanism further includes a guide rod. The guide rod penetrates through the lifting plate and is slidably matched with the lifting plate. One end of the guide rod is fixedly connected to the bottom plate, and the other end is fixedly connected to the heat insulator. The axis of the guide rod is parallel to the axis of the open end.

[0016] As a preferred technical solution of the crystal growth device, the crystal drawing mechanism further includes a heat-insulating cylinder, and the heat-insulating cylinder surrounds the outer peripheral wall of the crucible.

[0017] As a preferred technical solution of the crystal growth device, a heat-insulating ring is convexly provided on the inner peripheral wall of the high-temperature chamber, and the heat-insulating ring is in clearance fit with the crystal drawing mechanism.

[0018] As a preferred technical solution of the crystal growth device, the distance between the guide ring and the cooling plate is a, 5mm≤a≤30mm.

[0019] As a preferred technical solution for the crystal growth device, the cooler is an aluminum alloy device or a copper device.

[0020] The beneficial effects of the utility model are:

[0021] The utility model provides a crystal growing device, which comprises a growing furnace, a crucible, a crystal leading-down mechanism and a lifting mechanism. The growing furnace comprises a heat insulator and a heating element. The heat insulator is provided with a high-temperature cavity and an opening connected to the high-temperature cavity, the opening faces the ground, and the heating element is arranged in the high-temperature cavity. The crucible is used to hold raw materials, and the bottom surface of the crucible is conical. The crystal leading-down mechanism comprises a cooler. The crucible is placed above the cooler. The cooler comprises a cooling plate and a drainage ring. The cooling plate is conical and is attached to the bottom surface of the crucible. The drainage ring is arranged coaxially with the cooling plate and spaced. The drainage ring is located on a side of the cooling plate away from the crucible and is surrounded by the cooling plate to form a drainage channel. Coolant flows in from one end of the drainage channel and flows out from the other end of the drainage channel. The lifting mechanism drives the crucible and the cooler to extend from the opening into the high-temperature cavity in sequence and has a first state and a second state along the axial direction of the opening. The first state is that the crystal leading-down mechanism is fixed relative to the heat insulator, and the second state is that the crystal leading-down mechanism slides relative to the heat insulator. When the crystal growth device is working, the process is as follows: place the crystal raw material in the crucible; place the crystal lead-down mechanism in the high-temperature chamber, and heat the crystal raw material in the crucible through the heating element to completely melt the crystal raw material in the crucible, and keep it warm; after the insulation is completed, the growth begins, and the crystal lead-down mechanism is driven to extend from the high-temperature chamber at a uniform speed. At the same time, the cooler is controlled to lower the temperature of the crystal raw material in the crucible until it reaches room temperature. During this process, crystals grow in the crucible. Since a drainage channel is directly formed between the cooling plate and the drainage ring, and the crucible is set on the cooling plate, the coolant in the drainage channel can directly take away the heat conducted from the crucible to the cooling plate, thereby achieving precise, rapid, and large gradient cooling, thereby improving the quality of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic diagram of the structure of a crystal growth device in an embodiment of the utility model;

[0023] Figure 2 It is a structural schematic diagram of the crystal lowering mechanism in the embodiment of the utility model.

[0024] In the figure:

[0025] 100. Crystal raw materials;

[0026] 1. Growth furnace; 11. Heat insulator; 111. High temperature chamber; 1111. Heat insulation ring; 12. Heating element;

[0027] 21. Crucible;

[0028] 2. Crystal drawing-down mechanism; 22. Cooler; 221. Cooling plate; 222. Drainage ring; 223. Sealing plate; 2231. First hole; 2232. Second hole; 2233. Third hole; 224. Outer tube; 225. Partition tube; 226. Inner tube; 227. Drainage channel; 23. Thermocouple; 24. Heat insulation cylinder;

[0029] 3. Lifting mechanism; 31. Bottom plate; 32. Lifting plate; 33. Driving assembly; 34. Guide rod. Detailed implementation manners

[0030] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings. Apparently, the described embodiments are some but not all of the embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the protection scope of the present utility model.

[0031] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present utility model. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions, and the first feature being "above", "over" and "on" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature. The first feature being "below", "under" and "beneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the first feature has a lower horizontal height than the second feature.

[0032] In the description of the present utility model, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection" and "coupling" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific situations.

[0033] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0034] like Figure 1 and Figure 2 As shown, this embodiment provides a crystal growth device, which includes a growth furnace 1, a crucible 21, a crystal lowering mechanism 2 and a lifting mechanism 3. The growth furnace 1 includes an insulator 11 and a heating element 12. The insulator 11 is provided with a high-temperature cavity 111 and an opening connected to the high-temperature cavity 111, the opening facing the ground, and the heating element 12 is arranged in the high-temperature cavity 111; the crucible 21 is used to hold raw materials, and the bottom surface of the crucible 21 is conical; the crystal lowering mechanism 2 includes a cooler 22, the crucible 21 is placed above the cooler 22, the cooler 22 includes a cooling plate 221 and a drainage ring 222, and the cooling plate 221 is conical shaped and attached to the bottom surface of the crucible 21, the drainage ring 222 is coaxially spaced from the cooling plate 221, the drainage ring 222 is located on the side of the cooling plate 221 away from the crucible 21 and is surrounded by the cooling plate 221 to form a drainage channel 227, the coolant flows into the drainage channel 227 from one end and flows out from the other end of the drainage channel 227; the lifting mechanism 3 drives the crucible 21 and the cooler 22 to extend from the opening into the high-temperature chamber 111 in turn and has a first state and a second state along the axial direction of the opening, the first state is that the crystal lowering mechanism 2 is fixed relative to the insulation body 11, and the second state is that the crystal lowering mechanism 2 slides relative to the insulation body 11. When the crystal growth device is working, the process is as follows: the crystal raw material 100 is placed in the crucible 21; the crystal lowering mechanism 2 is placed in the high-temperature chamber 111, and the crystal raw material 100 in the crucible 21 is heated by the heating element 12, so that the crystal raw material 100 in the crucible 21 is completely melted and kept warm; after the insulation is completed, the growth begins, and the lifting mechanism 3 drives the crystal lowering mechanism 2 to descend at a uniform speed, and then extend out of the high-temperature chamber 111. At the same time, the cooler 22 is controlled to lower the temperature of the crystal raw material 100 in the crucible 21 until it reaches room temperature. In this process, crystals grow in the crucible 21. Since the drainage channel 227 is directly formed between the cooling plate 221 and the drainage ring 222, and the crucible 21 is set on the cooling plate 221, the coolant in the drainage channel 227 can directly take away the heat conducted from the crucible 21 to the cooling plate 221, thereby achieving accurate, rapid, and large gradient cooling, thereby improving the quality of the crystal.

[0035] Specifically, the heating element 12 is a heating wire;

[0036] Optionally, the heat insulator 11 is made of a heat-insulating material, which can slow down the loss of heat in the high-temperature cavity 111 .

[0037] Optionally, the bottom surface of the crucible 21 is conical; the cooling plate 221 is conical and is attached to the bottom surface of the crucible 21, and the drainage ring 222 is arranged coaxially and at intervals with the cooling plate 221. In this embodiment, the above arrangement can increase the contact area between the crucible 21 and the cooling plate 221, thereby enhancing the cooling rate of the crystal raw material 100 in the crucible 21. In other embodiments, the bottom surface of the crucible 21 can also be spherical, and the cooling plate 221 is spherical and is attached to the bottom surface of the crucible 21.

[0038] Optionally, the large diameter of the cooling plate 221 is greater than the large diameter of the bottom surface of the crucible 21. In this embodiment, this arrangement enables the cooling plate 221 to completely cover the bottom surface of the crucible 21, thereby enhancing the cooling effect on the crucible 21.

[0039] Regarding the specific structure of the cooler 22, optionally, the cooler 22 further includes a sealing plate 223 and an outer tube 224, a partition tube 225, and an inner tube 226 that are sequentially sleeved at intervals from the outside to the inside. One end of the outer tube 224, one end of the partition tube 225, and one end of the inner tube 226 are respectively sealed and connected to the sealing plate 223. The other end of the outer tube 224 and the other end of the inner tube 226 are respectively sealed and connected to the cooling plate 221 coaxially. The other end of the partition tube 225 is sealed and connected to the drainage ring 222, and the drainage ring 222 is arranged at intervals from the corresponding inner tube 226 and outer tube 224. The sealing plate 223 is provided with a first hole 2231 and a second hole 2232. One of the first hole 2231 and the second hole 2232 communicates with the gap between the outer tube 224 and the partition tube 225, and the other communicates with the gap between the inner tube 226 and the partition tube 225. In this embodiment, a first cavity is formed between the outer tube 224 and the partition tube 225, and a second cavity is formed between the inner tube 226 and the partition tube 225. The first cavity and the second cavity are communicated through a drainage channel 227. When the first hole 2231 is used as the liquid inlet hole and the second hole 2232 is used as the liquid outlet hole, the coolant flows into the first cavity from the first hole 2231, then flows into the second cavity through the drainage channel 227, and finally flows out from the second hole 2232. When the second hole 2232 is used as the liquid inlet hole and the first hole 2231 is used as the liquid outlet hole, the coolant flows into the second cavity from the second hole 2232, then flows into the first cavity through the drainage channel 227, and finally flows out from the first hole 2231.

[0040] Optionally, the sealing plate 223 further includes a third hole 2233, and the third hole 2233 communicates with the inner tube 226; the crystal drawing-down mechanism 2 further includes a thermocouple 23. The thermocouple 23 passes through the third hole 2233 and extends into the inner tube 226, and the thermocouple 23 abuts against the cooling plate 221. In this embodiment, the thermocouple 23 extends into the inner tube 226 through the third hole 2233, and then abuts against the bottom of the crucible 21, so that the thermocouple 23 can measure the temperature at the bottom of the crucible 21.

[0041] Optionally, the lifting mechanism 3 includes a bottom plate 31, a lifting plate 32, and a driving assembly 33. The bottom plate 31 is spaced apart from and fixedly arranged relative to the heat insulation body 11. The bottom plate 31 faces the open end. The driving assembly 33 is arranged on the bottom plate 31 and drives the lifting plate 32 to slide along the axial direction of the open end. The crystal drawing-down mechanism 2 is arranged on the lifting plate 32. In this embodiment, the driving assembly 33 drives the lifting plate 32 to move along the axial direction of the open end, thereby realizing the sliding of the crystal drawing-down mechanism 2 in the high-temperature cavity 111. The driving assembly 33 can be a lifting cylinder, a hydraulic cylinder, a linear motor, a lead screw and nut structure, etc.

[0042] Optionally, the lifting mechanism 3 further includes a guide rod 34. The guide rod 34 passes through the lifting plate 32 and is in sliding fit with the lifting plate 32. One end of the guide rod 34 is fixedly connected to the bottom plate 31, and the other end is fixedly connected to the heat insulation body 11. The axis of the guide rod 34 is parallel to the axis of the open end. In this embodiment, since the axis of the guide rod 34 is parallel to the axis of the open end, the lifting plate 32 can only slide along the axis of the guide rod 34, thereby improving the stability of the driving assembly 33 driving the lifting plate 32 to slide. Specifically, the lifting mechanism 3 further includes a guide sleeve. The guide sleeve passes through the lifting plate 32 and is fixedly connected to the lifting plate 32. The guide sleeve is sleeved on the lifting rod. The guide sleeve can prevent the guide rod 34 from wearing the lifting plate 32.

[0043] Optionally, there are at least two lifting rods. The at least two lifting rods are spaced apart on the bottom plate 31. This setting can further improve the stability of the driving assembly 33 driving the lifting plate 32 to slide.

[0044] Optionally, the crystal drawing-down mechanism 2 further includes a heat insulation cylinder 24. The heat insulation cylinder 24 surrounds the outer peripheral wall of the crucible 21. In this embodiment, the heat insulation cylinder 24 is arranged on the side of the crucible 21 away from the cooler 22 and is opposite to the feeding port of the crucible 21. The function of the heat insulation tube is to keep the crystal in the crucible 21 warm and prevent the temperature drop gradient of the crystal from being too large.

[0045] Optionally, a heat insulation ring 1111 protrudes from the inner peripheral wall of the high-temperature cavity 111. The heat insulation ring 1111 is in clearance fit with the crystal drawing-down mechanism 2. In this embodiment, the purpose of the heat insulation ring 1111 is to reduce the heat dissipation in the heat insulation cavity.

[0046] Optionally, the distance between the drainage ring 222 and the cooling plate 221 is a, and 5mm ≤ a ≤ 30mm. In this embodiment, the selection of a is determined by the maximum water flow allowed by the drainage channel 227.

[0047] Optionally, the cooler 22 is an aluminum alloy device or a copper device. In this embodiment, the above coolers 22 are all made of materials with relatively high thermal conductivity. Therefore, it is beneficial to the heat dissipation efficiency of the crystal.

[0048] Obviously, the above embodiments of the present utility model are merely examples for clearly illustrating the present utility model, rather than limitations on the implementation manners of the present utility model. For those of ordinary skill in the art, other different forms of changes or alterations can be made based on the above description. It is not necessary and impossible to enumerate all the implementation manners here. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the claims of the present utility model.

Claims

1. A crystal growth device, characterized in that include: A growth furnace (1) comprises a heat insulator (11) and a heating element (12), wherein the heat insulator (11) is provided with a high temperature chamber (111) and an opening communicating with the high temperature chamber (111), the opening facing the ground, and the heating element (12) is arranged in the high temperature chamber (111); A crucible (21) for containing raw materials, wherein the bottom surface of the crucible (21) is conical; A crystal lowering mechanism (2), comprising a cooler (22), the crucible (21) being placed above the cooler (22), the cooler (22) comprising a cooling plate (221) and a drainage ring (222), the cooling plate (221) being conical and attached to the bottom surface of the crucible (21), the drainage ring (222) being coaxially arranged with the cooling plate (221) and spaced apart, the drainage ring (222) being located on a side of the cooling plate (221) away from the crucible (21) and being surrounded by the cooling plate (221) to form a drainage channel (227), the cooling liquid flowing into the drainage channel (227) from one end and flowing out from the other end of the drainage channel (227); A lifting mechanism (3) drives the crucible (21) and the cooler (22) to extend from the opening into the high-temperature chamber (111) in sequence and has a first state and a second state along the axial direction of the opening, wherein the first state is that the crystal lowering mechanism (2) is fixed relative to the heat insulating body (11), and the second state is that the crystal lowering mechanism (2) slides relative to the heat insulating body (11).

2. The crystal growth device according to claim 1, characterized in that: The major diameter of the cooling plate (221) is greater than the major diameter of the bottom surface of the crucible (21).

3. The crystal growth device according to claim 1, characterized in that: The cooler (22) further comprises a sealing plate (223) and an outer tube (224), a partition tube (225) and an inner tube (226) which are sequentially spaced from the outside to the inside, one end of the outer tube (224), one end of the partition tube (225) and one end of the inner tube (226) are respectively sealedly connected to the sealing plate (223), the other end of the outer tube (224) and the other end of the inner tube (226) are respectively coaxially sealedly connected to the cooling plate (221), and the other end of the partition tube (225) is The sealing plate (223) is sealed and connected to the drainage ring (222), and the drainage ring (222) is spaced apart from the corresponding inner tube (226) and the outer tube (224), and the sealing plate (223) is provided with a first hole (2231) and a second hole (2232), one of the first hole (2231) and the second hole (2232) is connected to the gap between the outer tube (224) and the separator tube (225), and the other is connected to the gap between the inner tube (226) and the separator tube (225).

4. The crystal growth device according to claim 3, characterized in that: The sealing plate (223) further comprises a third hole (2233), and the third hole (2233) is in communication with the inner tube (226); The crystal lead-down mechanism (2) further comprises a thermocouple (23), wherein the thermocouple (23) passes through the third hole (2233) and extends into the inner tube (226), and the thermocouple (23) abuts against the cooling plate (221).

5. The crystal growth device according to claim 1, characterized in that: The lifting mechanism (3) comprises a base plate (31), a lifting plate (32) and a driving assembly (33); the base plate (31) is spaced apart from the heat insulator (11) and is relatively fixedly arranged; the base plate (31) is opposite to the opening; the driving assembly (33) is arranged on the base plate (31) and drives the lifting plate (32) to slide along the axial direction of the opening; and the crystal lowering mechanism (2) is arranged on the lifting plate (32).

6. The crystal growth device according to claim 5, characterized in that: The lifting mechanism (3) further comprises a guide rod (34), wherein the guide rod (34) is passed through the lifting plate (32) and is slidably matched with the lifting plate (32), one end of the guide rod (34) is fixedly connected to the bottom plate (31), and the other end is fixedly connected to the heat insulator (11), and the axis of the guide rod (34) is parallel to the axis of the opening.

7. The crystal growth device according to any one of claims 1 to 6, characterized in that: The crystal lowering mechanism (2) further comprises a heat-insulating cylinder (24), wherein the heat-insulating cylinder (24) surrounds the outer peripheral wall of the crucible (21).

8. The crystal growth device according to any one of claims 1 to 6, characterized in that: A heat-insulating ring (1111) is convexly provided on the inner peripheral wall of the high-temperature chamber (111), and the heat-insulating ring (1111) is clearance-matched with the crystal lowering mechanism (2).

9. The crystal growth device according to any one of claims 1 to 6, characterized in that: The distance between the guide ring (222) and the cooling plate (221) is a, 5mm≤a≤30mm.

10. The crystal growth device according to any one of claims 1 to 6, characterized in that: The cooler (22) is an aluminum alloy device or a copper device.

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