Receiving module based on SIP
Through the SIP-based reception module, a vertical stacking structure with multi-layer board and hot ball interconnection is adopted, the problems of large size, heavy weight and design complexity of traditional microwave circuits are solved, and the thinner and high-density integration of microwave reception modules are realized, improving product performance and reliability.
Patent Information
- Application Number
- CN202421747847.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-23
- Publication Date
- 2025-06-13
- Estimated Expiration
- 2034-07-23
AI Technical Summary
In traditional microwave circuits, components such as aluminum cavity, connectors and multi-layer mixed plates lead to large size, heavy weight, complex design, low integration, and susceptible to electromagnetic interference, making it difficult to achieve miniaturization and high performance.
Using a SIP-based reception module, the vertical stacking structure of multi-layer board and inter-board ball planting is combined with Sn95Sb5 solder sintering and hot ball interconnection to achieve thinner circuits and high-density integration.
The microwave receiving module is thinner, smaller and higher density, which improves space utilization and heat dissipation efficiency, simplifies design complexity, and improves product consistency and reliability.
Smart Images

Figure CN222981530U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of microwave circuits, and particularly relates to a receiving module based on SIP. Background Art
[0002] The integration degree of microwave circuits is getting higher and higher, the functions are getting more and more complex, and the volume is getting smaller and smaller. In traditional microwave circuits, bare chips and packaged components are used in combination to reduce the area of the circuit and achieve miniaturization and high performance. Using traditional microwave circuit assembly technology necessarily involves components such as aluminum cavities, connectors, insulators, and multi-layer hybrid boards, but this brings several problems:
[0003] (1) An aluminum cavity is required as a carrier, increasing the size, thickness, and weight of the product;
[0004] (2) The circuit size is relatively large, the transmission distance between components is relatively long, the wiring is long, and it is easily affected by electromagnetic interference, affecting the system performance;
[0005] (3) Multiple chips require precise design, layout, and interconnection to ensure signal integrity, increasing the design difficulty and complexity;
[0006] (4) The integration degree is limited. Due to factors such as volume, it is inconvenient to integrate in one module, and the scalability is not strong.
[0007] Based on this, the utility model proposes a receiving module based on SIP, which can reduce the complexity of external interconnection and layout. Summary of the Utility Model
[0008] The purpose of the utility model is to overcome the shortcomings of the prior art and provide a receiving module based on SIP, which is specifically realized through the following technical solutions:
[0009] A receiving module based on SIP includes a circuit structure and an assembly structure, wherein:
[0010] The circuit structure includes a time-sharing amplitude-limiting amplification receiving link, a power splitting preselection link, and a control circuit;
[0011] The assembly structure includes a multi-layer board A, a multi-layer board B, ball implantation between boards, and a ceramic base;
[0012] The time-sharing amplitude-limiting amplification receiving link and the power splitting preselection link are carried on the multi-layer board A; the amplitude-phase conditioning circuit is carried on the multi-layer board B;
[0013] The multi-layer board A is installed above the ceramic base; the multi-layer board B is installed above the multi-layer board A: The multi-layer board A and the multi-layer board B are electrically interconnected through ball implantation between boards.
[0014] Optionally or preferably, the multilayer board A is fixed to the ceramic base by Sn 95 Sb 5 solder sintering.
[0015] Optionally or preferably, the ball grid array between the boards is composed of SAC305 solder balls with a diameter of 0.5 mm.
[0016] Optionally or preferably, the bottom of the ceramic base is electrically interconnected with the peripheral circuit by implanting Sn 10 Pb 90 solder balls with a diameter of 0.5 mm through soldering.
[0017] Optionally or preferably, both the multilayer board A and the multilayer board B are 6-layer hybrid multilayer boards; both the multilayer board A and the multilayer board B are made of RO4350B.
[0018] Optionally or preferably, the assembly structure further includes a kovar frame and a kovar cover plate; the bottom of the kovar frame is fixed on the ceramic base, enclosing the multilayer board A, the multilayer board B and the ball grid array between the boards; the kovar cover plate is installed on the top of the kovar frame, encapsulating the multilayer board A, the multilayer board B and the ball grid array between the boards in a cavity enclosed by the ceramic base, the kovar frame and the kovar cover plate.
[0019] Optionally or preferably, the assembly structure further includes a kovar frame and a kovar cover plate; the bottom of the kovar frame is fixed on the ceramic base, enclosing the multilayer board A, the multilayer board B and the ball grid array between the boards; the kovar cover plate is installed on the top of the kovar frame, encapsulating the multilayer board A, the multilayer board B and the ball grid array between the boards in a cavity enclosed by the ceramic base, the kovar frame and the kovar cover plate.
[0020] Based on the above technical solutions, the following technical effects can be achieved:
[0021] A receiving module based on SIP provided by the present utility model adopts the vertical stacking SIP technology, realizing the thinning, miniaturization and high density of the microwave receiving module, and can ensure the heat dissipation efficiency while improving the space utilization rate. Description of the Drawings
[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present utility model. For those of ordinary skill in the art, other drawings can be obtained based on the structures shown in these drawings without creative efforts.
[0023] Figure 1 It is the circuit schematic diagram of Embodiment 1;
[0024] Figure 2 Exploded view of the internal structure of the present utility model;
[0025] Figure 3 Exploded view of the general assembly of the present utility model;
[0026] Figure 4 Cross-sectional view of the present utility model;
[0027] Explanation of the drawings in the figure:
[0028] 1 - Multilayer board A, 2 - Multilayer board B, 3 - Ball grid array between boards, 4 - Ceramic base, 5 - Kovar frame, 6 - Kovar cover plate. Detailed implementation manners
[0029] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Apparently, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.
[0030] In a preferred embodiment:
[0031] This embodiment provides a four-channel receiving module based on SIP, and its circuit schematic diagram is as Figure 1 shown, including a circuit structure and an assembly structure, wherein:
[0032] The circuit structure includes a two-channel time-division limited-amplitude amplification receiving link and a two-channel power division preselection link, and is equipped with an appropriate control circuit to complete the four-in-two-out function of radio frequency signals;
[0033] The assembly structure includes multilayer board A1, multilayer board B2, ball grid array between boards 3, and ceramic base 4;
[0034] The time-division limited-amplitude amplification receiving link and the power division preselection link are mounted on the multilayer board A1; the control circuit is mounted on the multilayer board B2;
[0035] The multilayer board A1 is sintered and fixed above the ceramic base 4 through Sn 95 Sb 5 solder; the multilayer board B2 is installed above the multilayer board A1: the multilayer board A1 and the multilayer board B2 are electrically interconnected through the ball grid array between boards 3.
[0036] Further, in this embodiment, the ball grid array between boards 3 is SAC305 solder balls with a diameter of 0.5 mm.
[0037] Further, in this embodiment, the bottom of the ceramic base 4 is implanted with Sn with a diameter of 0.5 mm10 Pb 90 The solder balls are electrically interconnected with the peripheral circuit by soldering.
[0038] Further, in this embodiment, both the multilayer board A and the multilayer board B are 6-layer mixed-pressure multilayer boards; both the multilayer board A and the multilayer board B are made of RO4350B.
[0039] Further, in this embodiment, the assembly structure further includes a kovar frame 5 and a kovar cover plate 6; the bottom of the kovar frame 5 is fixed on the ceramic base 4, enclosing the multilayer board A1, the multilayer board B2 and the inter-board ball planting 3; the kovar cover plate 6 is installed on the top of the kovar frame 5, encapsulating the multilayer board A1, the multilayer board B2 and the inter-board ball planting 3 in a cavity formed by enclosing the ceramic base 4, the kovar frame 5 and the kovar cover plate 6.
[0040] The four-channel receiving module based on SIP provided in this embodiment has the following advantages:
[0041] (1) Small size. In this embodiment, the vertical stacking SIP technology is adopted to integrate the four-channel receiving microwave circuit in a cavity of 21mm * 16mm * 3.8mm.
[0042] (2) Simplify the circuit board-level design, reduce the complexity of external interconnection and layout, enabling designers to focus more on system-level optimization rather than the layout of individual components, improving the consistency, productivity, reliability and stability of the product.
[0043] (3) It can realize the power division and amplification of dual-channel L-band broadband signals, and realize the selection and output of different channels through switch switching. At the same time, it realizes functions such as limiting amplification, filtering, attenuation, and phase shift of the input signal.
[0044] The above is only the preferred embodiment of the present invention. It should be understood that the present invention is not limited to the form disclosed herein, should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be changed within the scope of the concept described herein through the above teachings or the technology or knowledge in related fields. And the changes and modifications made by those skilled in the art without departing from the spirit and scope of the present invention should all be within the protection scope of the appended claims of the present invention.
Claims
1. A SIP-based receiving module, characterized in that: It includes circuit structure and assembly structure, wherein: The circuit structure includes a time-sharing limiting amplifier receiving link, a power division preselection link and a control circuit; The assembly structure includes a multilayer board A, a multilayer board B, inter-board balls, and a ceramic base; The multilayer board A is equipped with a time-sharing limiting amplifier receiving link and a power division pre-selection link; the multilayer board B is equipped with an amplitude and phase conditioning circuit; The multilayer board A is installed on the ceramic base; the multilayer board B is installed on the multilayer board A; the multilayer board A and the multilayer board B are electrically interconnected through inter-board ball planting.
2. A SIP-based receiving module according to claim 1, characterized in that: The multilayer board A is Sn 95 Sb5 solder is sintered and fixed to the ceramic base.
3. The SIP-based receiving module according to claim 1, characterized in that: The inter-board implant balls are SAC305 solder balls with a diameter of 0.5 mm.
4. The SIP-based receiving module according to claim 1, characterized in that: The bottom of the ceramic base is implanted with a 0.5 mm diameter Sn 10 Pb 90 Solder balls are electrically interconnected with peripheral circuits through welding.
5. The SIP-based receiving module according to claim 1, characterized in that: The multilayer board A and the multilayer board B are both 6-layer mixed-pressed multilayer boards; the multilayer board A and the multilayer board B are both made of RO4350B.
6. The SIP-based receiving module according to claim 1, characterized in that: The assembly structure also includes a fellable frame and a fellable cover plate; the bottom of the fellable frame is fixed on the ceramic base, enclosing the multilayer board A, the multilayer board B and the inter-board planting balls; the fellable cover plate is concealed on the top of the fellable frame, encapsulating the multilayer board A, the multilayer board B and the inter-board planting balls in the cavity enclosed by the ceramic base, the fellable frame and the fellable cover plate.