Low-frequency nitrogen DBD type wide plasma treatment device under normal pressure

Abstract

The utility model provides a low-frequency nitrogen DBD type wide plasma processing device under normal pressure, which comprises a shell with a hollow inner cavity, the shell is composed of a top plate, a front side plate, a rear side plate, a left side plate, a right side plate and a bottom plate which are of an integrated structure, and the left side plate and the right side plate are provided with gas transmission components for inputting process gas into the inner cavity of the shell. The low-frequency nitrogen DBD type wide plasma processing device under the normal pressure is characterized in that an ionization assembly which is matched with process gas and discharges to gas in the inner cavity of the shell is arranged in the inner cavity of the shell, the bottom plate is composed of a front gas distribution plate and a rear gas distribution plate, and a gap is reserved between the front gas distribution plate and the rear gas distribution plate. Gas in the inner cavity of the ionization assembly is discharged to form plasma, the plasma gas is linearly sprayed out through a gap between the front gas distribution plate and the rear gas distribution plate, materials are uniformly cleaned, and the processing uniformity is effectively improved.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma processing, and particularly relates to a low-frequency nitrogen DBD type wide-width plasma processing device under atmospheric pressure. Background Art

[0002] Plasma, also known as the plasma state. The substance in the plasma state has properties similar to those of the gaseous state, such as good fluidity and diffusivity. However, since the basic constituent particles of the plasma are ions and electrons, it also has many properties different from those of the gaseous state, such as good electrical conductivity and thermal conductivity. In particular, according to scientific calculations, the specific heat capacity of the plasma is proportional to the temperature, and the specific heat capacity of the plasma at high temperatures is often hundreds of times that of the gas. Therefore, the application of the plasma is very extensive, and it has very important application value in aspects such as our daily life, industry, agriculture, environmental protection, military, aerospace, energy, and celestial bodies.

[0003] Before the surface treatment of the workpiece, in order to obtain good adhesion of the material surface, using plasma for surface cleaning treatment is a common treatment method. Plasma is an ionized gaseous substance composed of positive and negative ions generated after the ionization of atomic clusters with some electrons deprived. It is mainly sprayed onto the surface of the workpiece by the nozzle of the plasma processing device to achieve the treatment purpose. In the roll material industry, the material needs to be subjected to plasma treatment before the next process such as spraying or laminating.

[0004] The existing linear nitrogen wide-width plasma cleaning machine on the market adopts a porous design and uses an array of pores for linear plasma treatment, resulting in uneven treatment effects. Currently, the uniformity can only reach about 70%.

[0005] A wide-width plasma cleaning machine disclosed in a Chinese patent with the reference publication number CN118417254A, through the mutual cooperation of the fitting clip, the middle clip, the diversion groove 1 and the diversion groove 2, the gas enters from the air inlet and is diverted into the quartz tube placement through groove through the diversion of the alternately and communicatively arranged diversion groove 1 and the diversion groove 2. Through the diversion of the above air flow channel, the gas entering the middle clip is dispersed and can flow evenly into the quartz tube placement through groove. The wiring component energizes the electrode placed in the quartz tube placement through groove, so that the gas in the quartz tube placement through groove forms plasma gas, and the evenly distributed plasma gas can be evenly ejected from the air outlet to ensure the cleaning efficiency of the product to be cleaned.

[0006] This application designs another plasma processing device to solve the problem of uneven treatment effects existing in the existing linear nitrogen wide-width plasma cleaning machine. Summary of the Invention

[0007] To overcome the deficiencies of the prior art, the present utility model proposes a wide-width plasma processing device of low-frequency nitrogen DBD under atmospheric pressure, with a housing having a hollow inner cavity. The housing is composed of a top plate, a front side plate, a rear side plate, a left side plate, a right side plate, and a bottom plate of an integrated structure. The left side plate and the right side plate are provided with gas supply components for inputting process gas into the inner cavity of the housing. The inner cavity of the housing is provided with an ionization component that cooperates with the process gas and discharges electricity to the gas in the inner cavity of the housing. The bottom plate is composed of a front gas distribution plate and a rear gas distribution plate, and there is a gap between the front gas distribution plate and the rear gas distribution plate.

[0008] To achieve the above object, the housing is formed by the top plate, the front side plate, the rear side plate, the left side plate, the right side plate, and the bottom plate. The process gas is introduced into the inner cavity of the housing through the gas supply component. The gas in the inner cavity is discharged through the ionization component to form plasma. The plasma gas linearly sprays out through the gap between the front gas distribution plate and the rear gas distribution plate, uniformly cleaning the material, effectively improving the uniformity of treatment.

[0009] Further, the gas supply component includes gas supply pipes opened in the inner cavities of the left side plate and the right side plate. Air inlets are opened on the upper surfaces of the left side plate and the right side plate. One end of the air inlet is communicated with the gas supply pipe, and the other end is communicated with a gas transmission pipe that transmits process gas and penetrates the top plate. Exhaust holes are opened on the opposite sides of the left side plate and the right side plate, and the exhaust holes communicate the gas supply pipe and the inner cavity of the housing.

[0010] Through the above technical solution, the gas transmission pipe, the air inlet, the gas supply pipe, and the exhaust hole form an air flow channel for gas flow. The process gas sequentially passes through the gas transmission pipe, the air inlet, and the gas supply pipe along the flow path, and enters the inner cavity of the housing through the exhaust hole, improving the uniformity of the process gas entering the inner cavity of the housing.

[0011] Further, the ionization component includes a ceramic protection tube detachably and fixedly connected to the left side plate and the right side plate. The inner cavity of the ceramic protection tube is hollow, and a strip-shaped groove is opened above it. The top plate is detachably and fixedly connected with a conductive plate through a connection component. The conductive plate extends into the inner cavity of the ceramic protection tube through the strip-shaped groove, and an electrode plate adapted to the ceramic protection tube is fixed to the part of the conductive plate extending into the inner cavity of the ceramic protection tube.

[0012] Through the above technical solution, the conductive plate plays a transmission role to facilitate the energization of the electrode plate.

[0013] Further, a high-energy feeding tube is also fixed on the top plate. A high-voltage cable is arranged in the high-energy feeding tube. Both ends of the high-voltage cable penetrate the high-energy feeding tube. The high-energy feeding tube protects the high-voltage cable. One end of the high-voltage cable is connected to an external high-voltage wire, and the other end extends into the inner cavity of the housing and is electrically connected to a conductive copper sheet. The end of the conductive copper sheet away from the high-voltage cable is electrically connected to the conductive plate.

[0014] Through the above technical solution, the external high-voltage wire powers the electrode plate to provide the energy required for the plasma.

[0015] Further, the connection component includes a mounting plate fixed on the bottom plate and having a cross-shaped cross-section. The mounting plate connects the top plate and the conductive plate. The front side plate and the rear side plate are provided with grooves adapted to the mounting plate on one side facing the mounting plate. The front side plate and the rear side plate are nested outside the mounting plate through the grooves and fixedly connected to the mounting plate.

[0016] Through the above technical solution, the top plate, the left side plate, the right side plate and the conductive plate are further connected through the mounting plate, further improving the connection stability of the top plate, the front side plate and the rear side plate.

[0017] Further, the ceramic protection tube is located directly above the gap between the front gas distribution plate and the rear gas distribution plate and is close to the front gas distribution plate and the rear gas distribution plate.

[0018] Through the above technical solution, the plasma gas is evenly ejected through the gap between the ceramic protection plate, the front gas distribution plate and the rear gas distribution plate, and the material is evenly cleaned, effectively improving the uniformity of the treatment.

[0019] In summary, the low-frequency nitrogen DBD type wide-width plasma treatment device under normal pressure has the following beneficial effects:

[0020] The low-frequency nitrogen DBD type wide-width plasma treatment device under normal pressure is composed of a top plate, a front side plate, a rear side plate, a left side plate, a right side plate and a bottom plate to form a housing. The process gas is introduced into the inner cavity of the housing through the gas transmission component. The gas in the inner cavity of the ionization component is discharged to form a plasma. The plasma gas is linearly ejected through the gap between the front gas distribution plate and the rear gas distribution plate, and the material is evenly cleaned, effectively improving the uniformity of the treatment.

[0021] For the low-frequency nitrogen DBD type wide-width plasma treatment device under normal pressure, the gas transmission pipeline, the air inlet, the air supply pipe and the exhaust hole form an air flow channel for gas flow. The process gas sequentially passes through the gas transmission pipeline, the air inlet, the air supply pipe along the flow path, and enters the inner cavity of the housing through the exhaust hole, improving the uniformity of the process gas entering the inner cavity of the housing. Description of the Drawings

[0022] The following further describes and elaborates the present invention with reference to the drawings.

[0023] Figure 1 is the overall structural schematic diagram of the preferred embodiment of the present invention;

[0024] Figure 2 is the bottom view structural schematic diagram of the whole of the present invention;

[0025] Figure 3 is the exploded structural schematic diagram of the whole of the present invention;

[0026] Figure 4 is the Figure 3 schematic enlarged structure view at position A in

[0027] Figure 5 is the Figure 3 schematic enlarged structure view at position B in

[0028] Reference numerals: 1, outer shell; 101, top plate; 102, front side plate; 103, rear side plate; 104, left side plate; 105, right side plate; 106, bottom plate; 106-1, front air distribution plate; 106-2, rear air distribution plate; 2, air inlet; 3, exhaust hole; 4, ceramic protection tube; 5, strip groove; 6, conductive plate; 7, electrode plate; 8, high-energy feeding tube; 9, conductive copper sheet; 10, mounting plate; 11, groove. Detailed implementation manners

[0029] Next, the technical solution of the present utility model will be described more clearly and completely by combining with the accompanying drawings and through the description of the preferred implementation manners of the present utility model.

[0030] As Figures 1-5 shown, a low-frequency nitrogen DBD type wide-width plasma processing device under normal pressure in a preferred implementation manner of the present utility model includes an outer shell 1 with a hollow inner cavity. The outer shell 1 is composed of a top plate 101, a front side plate 102, a rear side plate 103, a left side plate 104, a right side plate 105 and a bottom plate 106 of an integrated structure. The front side plate 102, the rear side plate 103, the left side plate 104 and the right side plate 105 form a square frame structure, and the top plate 101 and the bottom plate 106 are connected to the square frame structure formed by the front side plate 102, the rear side plate 103, the left side plate 104 and the right side plate 105.

[0031] As Figure 1 and Figure 3 , air supply pipes are provided in the inner cavities of the left side plate 104 and the right side plate 105 along the long side direction of the top plate 101. Air inlets 2 are provided on the upper surfaces of the left side plate 104 and the right side plate 105. One end of each air inlet 2 is communicated with the air supply pipe, and the other end is communicated with a gas transmission pipeline for transmitting process gas and penetrating through the top plate 101. Exhaust holes 3 are provided on the opposite sides of the left side plate 104 and the right side plate 105. The exhaust holes 3 are communicated with the air supply pipe and the inner cavity of the outer shell 1. The gas transmission pipeline, the air inlets 2, the air supply pipes and the exhaust holes 3 form an air flow channel for gas flow. The process gas sequentially passes through the gas transmission pipeline, the air inlets 2, the air supply pipes along the flow path, and enters the inner cavity of the outer shell 1 through the exhaust holes 3, improving the uniformity of the process gas entering the inner cavity of the outer shell 1.

[0032] As Figure 3 and Figure 4, inside the inner cavity of the housing 1, there is an ionization component for discharging the gas in the inner cavity of the housing 1. The ionization component includes a ceramic protection tube 4 detachably and fixedly connected to the left side plate 104 and the right side plate 105. The inner cavity of the ceramic protection tube 4 is hollow, and a strip-shaped groove 5 is opened above it. The top plate 101 is detachably and fixedly connected with a conductive plate 6 through a connection component. The conductive plate 6 extends into the inner cavity of the ceramic protection tube 4 through the strip-shaped groove 5. A part of the conductive plate 6 extending into the inner cavity of the ceramic protection tube 4 is fixed with an electrode plate 7 adapted to the ceramic protection tube 4.

[0033] As Figure 1 and Figure 3 and Figure 4 , a high-energy feeding tube 8 is also fixed on the top plate 101. A high-voltage cable is arranged inside the high-energy feeding tube 8. Both ends of the high-voltage cable pass through the high-energy feeding tube 8. The high-energy feeding tube 8 protects the high-voltage cable. One end of the high-voltage cable is connected to an external high-voltage wire, and the other end extends into the inner cavity of the housing 1 and is electrically connected to a conductive copper sheet 9. The end of the conductive copper sheet 9 away from the high-voltage cable is electrically connected to the conductive plate 6, realizing the energization of the electrode plate 7 by the external high-voltage wire to provide the energy required for the plasma.

[0034] As Figure 3 , the connection component includes a mounting plate 10 fixed on the bottom plate 106 and having a cross-shaped cross-section. The mounting plate 10 connects the top plate 101 and the conductive plate 6. Grooves 11 adapted to the mounting plate 10 are opened on one side of the front side plate 102 and the rear side plate 103 facing the mounting plate 10. The front side plate 102 and the rear side plate 103 are nested outside the mounting plate 10 through the grooves 11 and fixedly connected to the mounting plate 10, further improving the connection stability of the top plate 101, the front side plate 102 and the rear side plate 103.

[0035] As Figure 3 and Figure 5 , the bottom plate 106 is composed of a front air distribution plate 106-1 and a rear air distribution plate 106-2. The front air distribution plate 106-1 is fixed to the front side plate 102, and the rear air distribution plate 106-2 is fixed to the rear side plate 103. A gap is left between the front air distribution plate 106-1 and the rear air distribution plate 106-2. The ceramic protection tube 4 is located directly above the gap between the front air distribution plate 106-1 and the rear air distribution plate 106-2 and close to the front air distribution plate 106-1 and the rear air distribution plate 106-2. The plasma gas is evenly ejected through the gap between the ceramic protection plate, the front air distribution plate 106-1 and the rear air distribution plate 106-2, uniformly cleaning the material and effectively improving the uniformity of the treatment.

[0036] As Figure 3, a number of connection holes adapted to the ceramic protection tube 4 are provided on the left side plate 104 and the right side plate 105. The ceramic protection tube 4 is connected to the appropriate connection holes to adjust the distance between the ceramic protection tube 4 and the front gas distribution plate 106-1 and the rear gas distribution plate 106-2, and further adjust the gap size between the ceramic protection plate, the front gas distribution plate 106-1 and the rear gas distribution plate 106-2. At the same time, an installation plate 10 with a suitable size is selected to adjust the plasma gas cleaning effect.

[0037] During use, when the device is turned on, the process gas sequentially passes through the gas transmission pipeline, the air inlet 2, and the gas supply pipe along the flow path, and enters the inner cavity of the housing 1 through the exhaust hole 3. The output voltage is conducted to the electrode plate 7 through the high-voltage cable, the conductive copper sheet 9, and the conductive plate 6. After passing through the electrode plate 7, the process gas forms plasma gas. The ceramic protection tube 4 restricts the discharge from transforming into an arc, and the plasma gas is linearly and uniformly ejected from the gap between the ceramic protection tube 4, the front gas distribution plate 106-1, and the rear gas distribution plate 106-2, improving the high uniformity of plasma treatment.

[0038] The above specific embodiments only describe the preferred embodiments of the present invention, rather than limiting the protection scope of the present invention. Without departing from the design concept and spirit scope of the present invention, various deformations, substitutions, and improvements made by those of ordinary skill in the art to the technical solutions of the present invention based on the written description and drawings provided by the present invention shall fall within the protection scope of the present invention. The protection scope of the present invention is determined by the claims.

Claims

1. A low-frequency nitrogen DBD wide-width plasma processing device under normal pressure, characterized in that: The invention comprises a shell (1) having a hollow inner cavity, wherein the shell (1) is composed of a top plate (101), a front side plate (102), a rear side plate (103), a left side plate (104), a right side plate (105) and a bottom plate (106) of an integrated structure, wherein the left side plate (104) and the right side plate (105) are provided with a gas supply component for supplying a process gas into the inner cavity of the shell (1), and the inner cavity of the shell (1) is provided with an ionization component for cooperating with the process gas and discharging to the gas in the inner cavity of the shell (1), and the bottom plate (106) is composed of a front gas distribution plate (106-1) and a rear gas distribution plate (106-2), and a gap is left between the front gas distribution plate (106-1) and the rear gas distribution plate (106-2).

2. The low-frequency nitrogen DBD wide-width plasma processing device under normal pressure according to claim 1, characterized in that: The gas delivery assembly comprises an air delivery pipe provided in the inner cavities of the left side plate (104) and the right side plate (105); an air inlet (2) is provided on the upper surface of each of the left side plate (104) and the right side plate (105); one end of the air inlet (2) is connected to the air delivery pipe, and the other end is connected to a gas delivery pipeline that transmits process gas and passes through the top plate (101); exhaust holes (3) are provided on opposite sides of the left side plate (104) and the right side plate (105); the exhaust holes (3) are connected to the air delivery pipe and the inner cavity of the housing (1).

3. The low-frequency nitrogen DBD wide-width plasma processing device under normal pressure according to claim 1, characterized in that: The ionization assembly comprises a ceramic protection tube (4) which is detachably fixedly connected to a left side plate (104) and a right side plate (105); the inner cavity of the ceramic protection tube (4) is hollow and a strip groove (5) is provided on the upper portion; the top plate (101) is detachably fixedly connected to a conductive plate (6) via a connection assembly; the conductive plate (6) extends to the inner cavity of the ceramic protection tube (4) via the strip groove (5); and an electrode plate (7) adapted to the ceramic protection tube (4) is fixedly connected to the portion of the conductive plate (6) extending to the inner cavity of the ceramic protection tube (4).

4. The low-frequency nitrogen DBD wide-width plasma processing device under normal pressure according to claim 3, characterized in that: A high-energy feed-in tube (8) is also fixed on the top plate (101), a high-voltage cable is arranged inside the high-energy feed-in tube (8), both ends of the high-voltage cable pass through the high-energy feed-in tube (8), the high-energy feed-in tube (8) protects the high-voltage cable, one end of the high-voltage cable is connected to an external high-voltage line, and the other end extends to the inner cavity of the housing (1) and is electrically connected to a conductive copper sheet (9), and the conductive copper sheet (9) is electrically connected to the conductive plate (6) at one end away from the high-voltage cable.

5. The low-frequency nitrogen DBD wide-width plasma processing device under normal pressure according to claim 4, characterized in that: The connection assembly comprises a mounting plate (10) fixed on a bottom plate (106) and having a cross-shaped cross section, the mounting plate (10) connecting the top plate (101) and the conductive plate (6), the front side plate (102) and the rear side plate (103) being provided with grooves (11) adapted to the mounting plate (10) on the side facing the mounting plate (10), the front side plate (102) and the rear side plate (103) being nested outside the mounting plate (10) through the grooves (11) and being fixedly connected to the mounting plate (10).

6. The low-frequency nitrogen DBD wide-width plasma processing device under normal pressure according to claim 3, characterized in that: The ceramic protection tube (4) is located directly above the gap between the front air distribution plate (106-1) and the rear air distribution plate (106-2) and is close to the front air distribution plate (106-1) and the rear air distribution plate (106-2).

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