Semiconductor device based on double-sided copper-clad ceramic plate

Abstract

The utility model discloses a semiconductor device based on a double-sided copper-clad ceramic plate, which belongs to the technical field of semiconductors, and comprises a plastic package body, a diode chip assembly and at least one double-sided copper-clad ceramic plate, each double-sided copper-clad ceramic plate comprises a ceramic plate body, a current copper sheet and a heat dissipation copper sheet, the current copper sheet and the heat dissipation copper sheets are respectively bonded on two sides of the ceramic plate body, the diode chip assembly is fixed on the current copper sheet, the plastic package body wraps the double-sided copper-clad ceramic plate and the diode chip assembly, at least one exposed hole is formed in the back surface of the plastic package body, each heat dissipation copper sheet is embedded and fixed in one exposed hole, and the heat dissipation copper sheets are fixed on the two sides of the ceramic plate body. And the heat dissipation copper sheet and the back surface of the plastic package body are positioned on the same plane. The semiconductor device adopts a double-sided copper-clad ceramic plate structure, so that heat generated by the chip can be directly transmitted out through the double-sided copper-clad ceramic plate, and the technical problems that an existing semiconductor device is not timely in heat dissipation, poor in heat dissipation effect, insufficient in structural strength and complex in preparation process are solved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and particularly relates to a semiconductor device based on a double-sided copper-clad ceramic board. Background Art

[0002] Rectifier bridges and fast recovery diodes are a relatively common type of semiconductor device used in current electronic products. Since a large amount of heat is generated when the diode chips of semiconductor devices are working, and as power electronic devices evolve towards high power, the heat generation of semiconductor devices becomes even greater. Therefore, it is necessary to dissipate heat in a timely manner. Otherwise, it will not only affect the performance of semiconductor devices but also increase the risk of diode chip burnout.

[0003] In order to improve the heat dissipation performance of semiconductor devices, the patent document with the publication number CN203631532U discloses a semiconductor rectifier bridge. This rectifier bridge proposes to use an aluminum substrate to replace traditional epoxy resin as the rectifier bridge base, and the diode chip assembly (including diode chips, connecting pieces, etc.) and the frame are installed on one side of the aluminum substrate through epoxy resin, so as to utilize the high thermal conductivity of the aluminum substrate to improve the heat dissipation efficiency. However, through careful analysis, it is found that the rectifier bridge still has the following technical problems:

[0004] 1. There is no direct connection relationship between the aluminum substrate and the frame, and there is a gap of less than 1 mm between the two. Even if the distance between the aluminum substrate and the frame is set to 0, the contact between the two is not airtight. When plastic sealing, this gap will be filled with epoxy resin, which also increases the thermal resistance of the rectifier bridge and affects the heat dissipation performance of the device.

[0005] 2. The aluminum substrate is attached to the plastic package, making the aluminum substrate and the plastic package a two-layer overlapping structure. Coupled with the fact that an insulating layer is also provided between the aluminum substrate and the frame, this is equivalent to increasing the heat dissipation distance between the diode chip and the aluminum substrate. At the same time, the insulating layer is prone to heat accumulation at the insulating interface, still resulting in poor heat dissipation timeliness and heat dissipation effect of the device.

[0006] 3. In order to improve the heat dissipation effect of the rectifier bridge, a structure is adopted in which the areas of the aluminum substrate, the back of the plastic package, and the frame are set to be basically the same. However, this structure makes the epoxy resin surrounding the aluminum substrate and the frame less on the four sides, affecting the structural strength of the device and resulting in easy damage during installation.

[0007] 4. When preparing this rectifier bridge, in addition to first welding and fixing the chips on the frame, it is also necessary to pre-fix the aluminum substrate and the frame during plastic sealing, resulting in a relatively complex manufacturing process for the device. Summary of the Utility Model

[0008] The present utility model provides a semiconductor device based on a double-sided copper-clad ceramic board to overcome the above problems existing in the prior art. This semiconductor device uses a double-sided copper-clad ceramic board to replace the combined structure of the existing aluminum-based insulating layer board and frame, which can not only reduce the thermal resistance and heat dissipation distance of the device, but also enhance the structural strength of the device, and can also reduce the manufacturing process. Thus, the heat generated by the chip can be directly transferred out through the double-sided copper-clad ceramic board, solving the technical problems of untimely heat dissipation, poor heat dissipation effect, insufficient structural strength of the device, and relatively complex manufacturing process in the existing semiconductor devices.

[0009] To achieve the above object, the technical solution adopted by the present utility model is as follows:

[0010] A semiconductor device based on a double-sided copper-clad ceramic board includes a plastic package body and a diode chip assembly, and further includes at least one double-sided copper-clad ceramic board. Each double-sided copper-clad ceramic board includes a ceramic board body, a current copper sheet, and a heat dissipation copper sheet. The current copper sheet and the heat dissipation copper sheet are respectively bonded to both sides of the ceramic board body. The diode chip assembly is fixed on the current copper sheet. The plastic package body wraps the double-sided copper-clad ceramic board and the diode chip assembly. At least one exposed hole is provided on the back of the plastic package body. Each heat dissipation copper sheet is embedded and fixed in an exposed hole, and the heat dissipation copper sheet and the back of the plastic package body are in the same plane.

[0011] The number of the exposed holes is one, the number of the heat dissipation copper sheets is one, and the heat dissipation copper sheet is embedded and fixed in the exposed hole.

[0012] The number of the exposed holes is two, the number of the heat dissipation copper sheets is two, and the two heat dissipation copper sheets are respectively embedded and fixed in the two exposed holes.

[0013] The exposed holes and the heat dissipation copper sheets are symmetrically arranged on the plastic package body.

[0014] The ceramic board body is square or circular, the current copper sheet is square or circular, and the heat dissipation copper sheet is square or circular.

[0015] The area of the heat dissipation copper sheet on the double-sided copper-clad ceramic board is smaller than the area of the ceramic board body.

[0016] There is a spacing of 0.1 - 0.5 mm between the periphery of the heat dissipation copper sheet and the periphery of the ceramic board body.

[0017] The thickness of the ceramic board body is 0.2 - 1 mm, the thickness of the current copper sheet is 0.2 - 0.4 mm, and the thickness of the heat dissipation copper sheet is 0.2 - 0.4 mm.

[0018] Leads extending out of the plastic package body are welded and fixed on the current copper sheet.

[0019] Compared with the prior art, the beneficial effects of the present utility model are as follows:

[0020] 1. The semiconductor device provided by the present utility model adopts a double-sided copper-clad ceramic board, which includes a ceramic board body, a current copper sheet, and a heat dissipation copper sheet. Since the current copper sheet and the heat dissipation copper sheet are respectively bonded to both sides of the ceramic board body, the ceramic board body forms chemical bonds with the current copper sheet and the heat dissipation copper sheet without physical contact. On the one hand, the effective installation of the diode chip assembly can be achieved through the current copper sheet. On the other hand, the thermal conductivity of the ceramic board body made of alumina is about 24 W / (m·K). The ceramic board body has stronger impact resistance, bending resistance, and voltage resistance, and can provide a higher breakdown voltage. At the same time, the ceramic board body has a larger heat capacity and can absorb more heat during short-term overload, delaying the temperature rise, so it has a better heat transfer effect. On the other hand, the double-sided copper-clad ceramic board with a bonding structure is equivalent to reducing the thermal resistance and heat dissipation distance during heat dissipation, which can enable the heat generated by the chip to be dissipated in time through the ceramic board body and the heat dissipation copper sheet, and effectively avoid heat accumulation, thereby realizing the effective dissipation of the heat of the semiconductor device and improving the heat dissipation performance of the device. Moreover, the double-sided copper-clad ceramic board is essentially a DBC (Direct Bonded Copper) board with an integrated structure, which is an existing mature product and can be directly purchased and used in the market. Compared with the multi-layer and multi-component structures used in existing semiconductor devices, it can effectively avoid the situation where the thermal resistance increases due to the existence of gaps at the contact surface caused by physical contact in the multi-layer structure, so it has a better heat dissipation effect.

[0021] In addition, the present utility model adopts a structure in which an exposed hole adapted to the size of the heat dissipation copper sheet is provided on the plastic package body, and the heat dissipation copper sheet is embedded and fixed in the exposed hole. This structure not only facilitates the timely dissipation of the heat of the chip, but also increases the wrapping effect of the epoxy resin on the double-sided copper-clad ceramic board, which is beneficial to more stably embedding and fixing the double-sided copper-clad ceramic board in the plastic package body, thereby improving the structural strength, reliability, and stability of the semiconductor device.

[0022] Furthermore, semiconductor devices are usually used in cooperation with a radiator, that is, it is necessary to fix the heat dissipation copper sheet to the radiator to facilitate the rapid dissipation of heat. According to this usage mode, the present utility model sets the heat dissipation copper sheet embedded and fixed in the exposed hole and the back surface of the plastic package body to be in the same plane, which can make both the heat dissipation copper sheet and the back surface of the plastic package body directly contact the radiator. In addition to using the heat dissipation copper sheet directly contacting the radiator to achieve the rapid dissipation of heat, part of the heat can also be dissipated by the plastic package body directly contacting the radiator (the high temperature generated by the diode chip is concentrated on the double-sided copper-clad ceramic board, but it will also affect the temperature of the surrounding plastic package body), which is beneficial to further improving the heat dissipation speed and heat dissipation effect of the device.

[0023] When the utility model is installed, the diode chip assembly can be first welded and fixed to the current copper sheet, and then the double-sided copper-clad ceramic plate and the diode chip assembly can be encapsulated with epoxy resin. The whole process cancels the process of pre-corresponding and fixing the aluminum substrate and the frame during the encapsulation of the existing device. Therefore, it also has the advantages of simple structure and simple preparation process, which is more conducive to simplifying the production process and reducing the production cost.

[0024] 2. The number of exposed holes on the encapsulation body in the utility model can be one or two, and the number of heat dissipation copper sheets can be one or two. Through the cooperation of this specific structure, it is beneficial to prepare different types of semiconductor devices. For example, when the number of exposed holes is one or two and the number of heat dissipation copper sheets is one or two, devices such as plug-in rectifier bridges, surface-mounted rectifier bridges, and fast recovery diodes can be prepared; and the prepared devices have the advantages of high structural strength, timely heat dissipation, good heat dissipation effect, and stability and reliability compared with the existing devices because they adopt the structure of embedding and fixing the heat dissipation copper sheet in the exposed hole of the encapsulation body.

[0025] Furthermore, when the number of exposed holes is two and the number of heat dissipation copper sheets is two, the exposed holes and the heat dissipation copper sheets are symmetrically arranged on the encapsulation body. The utility model adopts the structure of symmetrically arranging the exposed holes and the heat dissipation copper sheets, comprehensively considering the internal structure, heat dissipation requirements, and shape design of the device, making the overall performance of the device better.

[0026] 3. The shapes of the ceramic plate body, the current copper sheet, and the heat dissipation copper sheet in the utility model can be completely the same or partially the same, and the shapes of the three do not interfere with each other, making it applicable to semiconductor devices with different shapes and specifications.

[0027] 4. The area of the heat dissipation copper sheet in the utility model is set to be smaller than the area of the ceramic plate body, and there is a spacing of 0.1 - 0.5 mm between the periphery of the heat dissipation copper sheet and the periphery of the ceramic plate body. One of its advantages is that when directly bonding the copper sheet to the surface of the ceramic plate body through the process, the control accuracy can be reduced, and there is no need to consider edge alignment, nor is there an oxidation interference problem. Another advantage is that it can make the encapsulation body form a concave-convex structure to cover and wrap this part of the spacing area, so that the periphery of the ceramic plate body is stably and reliably embedded and fixed in the encapsulation body, which is beneficial to improving the structural strength and stability and reliability of the semiconductor device.

[0028] 5. The present utility model sets the thickness of the ceramic plate body to 0.2 - 1 mm. This specific thickness enables the device to simultaneously possess excellent properties such as mechanical strength, voltage resistance, anti-bending property, and anti-impact property. On the contrary, if the thickness of the ceramic plate body is greater than 1 mm, although the device has better anti-impact and anti-bending properties, and can improve the voltage resistance ability, breakdown voltage, and short-time overload heat absorption of the device, the thicker ceramic plate body will hinder the heat transfer to the radiator, and it may overheat under long-term high power, and the weight and volume increase, which is not conducive to the compact design. If the thickness of the ceramic plate body is less than 0.2 mm, although it meets the requirements of product lightweight and thin design, it will lead to insufficient mechanical strength and voltage resistance of the device, there is a risk of fragmentation, and it is not applicable to high-voltage scenarios.

[0029] 6. The present utility model sets the thickness of the current copper sheet to 0.2 - 0.4 mm and the thickness of the heat dissipation copper sheet to 0.2 - 0.4 mm. This specific thickness enables the device to simultaneously possess excellent properties such as mechanical strength, electrical conductivity, the ability to carry a large current, reduction of resistance loss, rapid heat transfer, and no warping of the copper sheet. On the contrary, if the thicknesses of both the current copper sheet and the heat dissipation copper sheet are greater than 0.4 mm, due to the large difference in the thermal expansion coefficients of copper and ceramic, there will be a risk of delamination of the copper sheet, and the thicker copper sheet is prone to warping during high-temperature bonding, requiring more precise process control, which is difficult. If the thicknesses of both the current copper sheet and the heat dissipation copper sheet are less than 0.2 mm, it will affect the electrical conductivity and mechanical strength of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a cross-sectional view of a plug-in rectifier bridge provided by the present utility model;

[0031] Figure 2 is a rear view plane structure diagram of a plug-in rectifier bridge provided by the present utility model;

[0032] Figure 3 is a front view plane structure diagram of a plug-in rectifier bridge provided by the present utility model;

[0033] Figure 4 is a three-dimensional structure diagram of a plug-in rectifier bridge provided by the present utility model;

[0034] Figure 5 is a perspective three-dimensional structure diagram of a plug-in rectifier bridge provided by the present utility model;

[0035] Figure 6 is a cross-sectional view of a surface-mounted rectifier bridge provided by the present utility model;

[0036] Figure 7 is a rear view plane structure diagram of a surface-mounted rectifier bridge provided by the present utility model;

[0037] Figure 8 The front view plane structure diagram of a patch type rectifier bridge provided by the present utility model;

[0038] Figure 9 The sectional view of a fast recovery diode provided by the present utility model;

[0039] Figure 10 The rear view plane structure diagram of a fast recovery diode provided by the present utility model;

[0040] Figure 11 The front view plane structure diagram of a fast recovery diode provided by the present utility model.

[0041] The markings in the figure are: 1, plastic package; 2, double-sided copper clad ceramic board; 3, diode chip assembly; 4, pin; 11, exposed hole; 21, ceramic board body; 22, current copper sheet; 23, heat dissipation copper sheet. Specific implementation manner

[0042] Embodiment 1

[0043] As Figures 1-11 shown, this embodiment provides a semiconductor device based on a double-sided copper clad ceramic board, which includes a plastic package 1, a diode chip assembly 3 and at least one double-sided copper clad ceramic board 2. Each double-sided copper clad ceramic board 2 includes a ceramic board body 21, a current copper sheet 22 and a heat dissipation copper sheet 23. The current copper sheet 22 and the heat dissipation copper sheet 23 are respectively bonded to both sides of the ceramic board body 21. The diode chip assembly 3 is fixed on the current copper sheet 22. The plastic package 1 wraps the double-sided copper clad ceramic board 2 and the diode chip assembly 3. Pins 4 extending out of the plastic package 1 are welded and fixed on the current copper sheet 22. At least one exposed hole 11 is provided on the back of the plastic package 1. Each heat dissipation copper sheet 23 is embedded and fixed in an exposed hole 11, and the heat dissipation copper sheet 23 is in the same plane as the back of the plastic package 1. This enables the double-sided copper clad ceramic board 2 to be stably embedded and fixed in the plastic package 1, and at the same time, on the basis of a simplified structure, the heat of the diode chip can be quickly dissipated.

[0044] Those skilled in the art can understand that the diode chip assembly 3 includes diode chips and connecting pieces. The number of diode chips is determined according to the type of the semiconductor device. For example, the number of diode chips can be one, two, four, six, etc. Each chip and connecting piece are welded and fixed on the current copper sheet 22. According to different types of semiconductor devices, the current copper sheet 22 can be separated into mutually spaced conductive regions through a process, so as to facilitate welding and fixing each diode chip and connecting piece on the conductive regions.

[0045] In this embodiment, the number of exposed holes 11 corresponds to the number of heat dissipation copper sheets 23. Different types of semiconductor devices can be fabricated according to the different numbers of exposed holes 11 and their arrangement manners, which are specifically as follows:

[0046] First type: The number of exposed holes 11 is one, and the number of heat dissipation copper sheets 23 is also one. This heat dissipation copper sheet 23 is embedded and fixed in the exposed hole 11. When the number of exposed holes 11 is one and the number of heat dissipation copper sheets 23 is one, plug-in rectifier bridges, surface-mount rectifier bridges, and fast recovery diodes can be fabricated. Among them, Figures 6-8 shows a structural diagram of a surface-mount rectifier bridge. At this time, both the exposed hole 11 and the heat dissipation copper sheet 23 are located in the middle of the plastic package 1. Figures 9-11 shows a structural diagram of a fast recovery diode. At this time, both the exposed hole 11 and the heat dissipation copper sheet 23 are located in the lower middle part of the plastic package 1. When fabricating a plug-in rectifier bridge, the same structure as that of the surface-mount rectifier bridge can be adopted, and both the exposed hole 11 and the heat dissipation copper sheet 23 are arranged in the middle of the plastic package 1.

[0047] Second type: The number of exposed holes 11 is two, and the number of heat dissipation copper sheets 23 is two. These two heat dissipation copper sheets 23 are respectively embedded and fixed in the two exposed holes 11. When the number of exposed holes 11 is two and the number of heat dissipation copper sheets 23 is two, plug-in rectifier bridges, surface-mount rectifier bridges, and fast recovery diodes can also be fabricated. Among them, Figures 1-5 shows a structural diagram of a plug-in rectifier bridge. At this time, a through installation hole is provided in the middle of the plastic package 1 (this installation hole can also be provided at the edge of the plastic package 1). The exposed holes 11 are symmetrically arranged on the plastic package 1 and are located on both sides of the installation hole, and the heat dissipation copper sheets 23 are symmetrically fixed in the exposed holes 11. When fabricating a surface-mount rectifier bridge and a fast recovery diode, the same structure as that of the plug-in rectifier bridge can be adopted, and both the exposed hole 11 and the heat dissipation copper sheet 23 are symmetrically arranged on both sides of the installation hole.

[0048] Third type: The number of exposed holes 11 is at least three, and the number of heat dissipation copper sheets 23 is at least three. Each heat dissipation copper sheet 23 is respectively embedded and fixed in each exposed hole 11. The specific number of exposed holes 11 and the specific number of heat dissipation copper sheets 23 can be determined according to the requirements of the product. And when the number of exposed holes 11 is multiple and the number of heat dissipation copper sheets 23 is multiple, devices such as single-phase rectifier bridges or three-phase rectifier bridges can be fabricated.

[0049] Those skilled in the art can understand that when the number of heat dissipation copper sheets 23 is two, the number of current copper sheets 22 is also two. At this time, the diode chip assemblies 3 are respectively mounted on each current copper sheet 22.

[0050] The ceramic plate body 21 in this embodiment can be square or circular, the current copper sheet 22 can be square or circular, and the heat dissipation copper sheet 23 can be square or circular. Of course, on the premise that the process is satisfied, the shapes of the three can also be oval or other shapes. The shapes of the three can be the same, partially the same, or completely different, which is beneficial to meeting the needs of different products.

[0051] Now, taking Figures 1-5 the plug-in rectifier bridge shown with two double-sided copper-clad ceramic plates 2 and four diode chips as an example, its production process will be described as follows:

[0052] 1. Form multiple conductive regions on the current copper sheets 22 of the two double-sided copper-clad ceramic plates 2 through an etching process, and apply solder paste at the position points for pre-installing chips on the conductive regions.

[0053] 2. Fix the four diode chips on the conductive regions of the two current copper sheets 22 respectively through the solder paste.

[0054] 3. Apply solder paste at the position points for pre-installing connection pieces on the diode chips and the current copper sheets 22.

[0055] 4. Fix the connection pieces on each chip and each conductive region respectively through the solder paste, and fix the pin frame on each conductive region to form a semi-finished rectifier bridge.

[0056] 5. Through high-temperature sintering, melt and alloy the solder paste on the semi-finished rectifier bridge.

[0057] 6. Adopt a high-temperature hot pressing and injection molding process, use epoxy resin to encapsulate the welded semi-finished rectifier bridge. When encapsulating, an exposed hole 11 is formed on the back of the device, so that the heat dissipation copper sheet 23 is embedded and fixed in the exposed hole 11, and the back of the heat dissipation copper sheet 23 and the back of the encapsulation body 1 are located on the same plane.

[0058] 7. Adopt an electroplating process to plate tin on the surface of the encapsulated semi-finished rectifier bridge to obtain a complete plug-in rectifier bridge.

[0059] 8. Adopt a die cutting process to divide the connected plug-in rectifier bridges into individual units.

[0060] The semiconductor device provided in this embodiment is usually fixed on a radiator for use. Since the back of the heat dissipation copper sheet 23 and the back of the encapsulation body 1 are located on the same plane, both the heat dissipation copper sheet 23 and the back of the encapsulation body 1 are in direct contact with the surface of the radiator. At this time, most of the heat generated by the diode chips will be transferred to the radiator through the ceramic plate body 21 and the heat dissipation copper sheet 23 for heat dissipation, and at the same time, a small part of the heat will be transferred to the radiator through the back of the encapsulation body 1 for heat dissipation. The cooperation of the two can effectively improve the heat dissipation effect of the device. Of course, the foregoing setting method is the preferred structure of this embodiment. According to actual needs, the heat dissipation copper sheet 23 can also protrude slightly from the back of the encapsulation body 1.

[0061] Example 2

[0062] Based on Example 1, the structure of the double-sided copper-clad ceramic plate 2 is further optimized in this example.

[0063] As Figure 1 、 5 、6, and 9 show, in this example, the area of the heat dissipation copper sheet 23 on the double-sided copper-clad ceramic plate 2 is smaller than the area of the ceramic plate body 21. Specifically, there is a spacing of 0.1 - 0.5 mm between the periphery of the heat dissipation copper sheet 23 and the periphery of the ceramic plate body 21. This spacing can be 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, etc. Preferably, the spacing between the periphery of the heat dissipation copper sheet 23 and the periphery of the ceramic plate body 21 is 0.3 mm. This is to facilitate the stable and reliable embedding and fixing of the double-sided copper-clad ceramic plate 2 in the plastic package 1 on the premise of reducing the difficulty of the copper sheet bonding process, thereby improving the mechanical strength and stability reliability of the device.

[0064] Furthermore, in this example, the thickness of the ceramic plate body 21 is 0.2 - 1 mm, the thickness of the current copper sheet 22 is 0.2 - 0.4 mm, and the thickness of the heat dissipation copper sheet 23 is 0.2 - 0.4 mm. Specifically, the thickness of the ceramic plate body 21 can be 0.2 mm, 0.38 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.8 mm, 1 mm, etc., the thickness of the current copper sheet 22 can be 0.2 mm, 0.3 mm, 0.4 mm, etc., and the thickness of the heat dissipation copper sheet 23 can be 0.2 mm, 0.3 mm, 0.4 mm, etc. Preferably, the thickness of the ceramic plate body 21 is 0.38 mm, the thickness of the current copper sheet 22 is 0.3 mm, and the thickness of the heat dissipation copper sheet 23 is 0.3 mm, so that the device can simultaneously take into account excellent properties such as mechanical strength, voltage resistance, anti-bending property, anti-impact property, conductivity, carrying a large current, reducing resistance loss, quickly transferring heat, and the copper sheet not warping.

[0065] Experimental comparative example

[0066] This example uses Figures 1-5 the shown plug-in rectifier bridge as Experimental Example 1, the semiconductor rectifier bridge provided in the patent document with the publication number CN203631532U as Comparative Example 1, Figures 6-8 the shown surface-mounted rectifier bridge as Experimental Example 2, the conventional ABS device as Comparative Example 2, Figures 9-11 the shown fast recovery diode as Experimental Example 3, and the conventional fully encapsulated TO-220 fast recovery diode as Comparative Example 3. Heat dissipation tests were respectively carried out on each device as follows:

[0067] (1)The devices of Experimental Example 1 and Comparative Example 1 were respectively mounted on radiators of the same specification. Under the same conditions without a wind source, a current of 35 A was passed through, and the surface temperature of the devices was scanned with an infrared thermometer. The temperature of the device in Comparative Example 1 reached 130 °C, while the temperature of the product in Experimental Example 1 was only 110 °C, thus proving that the heat dissipation effect of the device in Experimental Example 1 is better.

[0068] (2)The conventional ABS product provided in Comparative Example 2 has a fully enclosed packaging structure, and it was tested that the heat cannot be effectively dissipated. However, in Experimental Example 2, due to the adoption of a structure where the double-sided copper-clad ceramic board and the heat dissipation copper sheet are exposed and in the same plane as the back of the plastic package, it was tested that the thermal resistance value of the surface-mounted rectifier bridge can be reduced by about 20%, thus proving that the heat dissipation effect of the device in Experimental Example 2 is better.

[0069] (3)The devices of Experimental Example 3 and Comparative Example 3 were respectively mounted on radiators of the same specification. Under the same conditions, a current of 20 A was passed through, and the surface temperature of the devices was scanned with an infrared thermometer. The temperature of the device in Comparative Example 3 reached 145 °C, while the temperature of the product in Experimental Example 3 was only 130 °C, thus proving that the heat dissipation effect of the device in Experimental Example 3 is better.

[0070] In addition, the present embodiment also conducted drop tests on the devices of each experimental example and each comparative example, as follows:

[0071] For each of the devices in Experimental Examples 1 - 3 and Comparative Examples 1 - 3, 20 pieces were prepared and freely dropped 10 times from a height of 1.5 meters. After testing, there were no cracks or missing corners on the outer surface of the plastic packages of all the devices in Comparative Examples 1 - 3, and the electrical parameters did not change. However, cracks or missing corners appeared between the aluminum substrate and the plastic package of some of the devices in Comparative Examples 1 - 3 after being freely dropped 8 times, thus proving that the mechanical strength and stable reliability of the devices in Embodiments 1 - 3 are better.

[0072] The above is only the specific implementation manner of the present utility model. Any feature disclosed in this specification, unless specifically described, can be replaced by other equivalent or similar-purpose alternative features; all the features disclosed, or all the steps in any method or process, except for mutually exclusive features and / or steps, can be combined in any way.

Claims

1. A semiconductor device based on a double-sided copper-clad ceramic board, comprising a plastic package (1) and a diode chip assembly (3), characterized in that: The invention also comprises at least one double-sided copper-clad ceramic plate (2), each double-sided copper-clad ceramic plate (2) comprising a ceramic plate body (21), a current copper sheet (22) and a heat dissipation copper sheet (23), the current copper sheet (22) and the heat dissipation copper sheet (23) being bonded to two sides of the ceramic plate body (21) respectively, the diode chip assembly (3) being fixed on the current copper sheet (22), the plastic package (1) encapsulating the double-sided copper-clad ceramic plate (2) and the diode chip assembly (3), the back of the plastic package (1) being provided with at least one exposure hole (11), each heat dissipation copper sheet (23) being embedded and fixed in one exposure hole (11), and the heat dissipation copper sheet (23) and the back of the plastic package (1) being located on the same plane.

2. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 1, characterized in that: The number of the exposure hole (11) is one, the number of the heat dissipation copper sheet (23) is one, and the heat dissipation copper sheet (23) is embedded and fixed in the exposure hole (11).

3. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 1, characterized in that: The number of the exposure holes (11) is two, the number of the heat dissipation copper sheets (23) is two, and the two heat dissipation copper sheets (23) are respectively embedded and fixed in the two exposure holes (11).

4. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 3, characterized in that: The exposure holes (11) and the heat dissipation copper sheets (23) are symmetrically arranged on the plastic package body (1).

5. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 1, characterized in that: The ceramic plate body (21) is square or circular, the current copper sheet (22) is square or circular, and the heat dissipation copper sheet (23) is square or circular.

6. A semiconductor device based on a double-sided copper-clad ceramic board according to any one of claims 1 to 5, characterized in that: The area of ​​the heat dissipation copper sheet (23) on the double-sided copper-clad ceramic plate (2) is smaller than the area of ​​the ceramic plate body (21).

7. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 6, characterized in that: There is a spacing of 0.1-0.5 mm between the periphery of the heat dissipation copper sheet (23) and the periphery of the ceramic plate body (21).

8. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 1, characterized in that: The thickness of the ceramic plate (21) is 0.2-1 mm, the thickness of the current copper sheet (22) is 0.2-0.4 mm, and the thickness of the heat dissipation copper sheet (23) is 0.2-0.4 mm.

9. A semiconductor device based on a double-sided copper-clad ceramic board according to claim 1, characterized in that: A pin (4) extending out of the plastic package body (1) is welded and fixed to the current copper sheet (22).

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