Supporting ejector pin and supporting device applying same

Abstract

The utility model belongs to the technical field of semiconductor equipment, and provides a supporting ejector pin which is applied to a heat treatment process of a to-be-treated test piece and comprises an ejector pin body, the ejector pin body comprises a main body part and a top support, and the main body part is provided with a first through hole, a first surface and a second surface, the first through hole penetrates through the main body part in the central axis direction of the ejector pin body, so that the first surface and the second surface are of an annular structure, the main body part is provided with a smooth inner wall and is arranged in an equal-thickness mode, and the top support surrounds the first through hole to be connected to the first surface and is provided with an arc-shaped surface protruding in the direction away from the second surface along the central axis; the to-be-treated test piece is placed on the arc-shaped surface of the top support, so that the surface temperature distribution uniformity of the to-be-treated test piece is effectively improved, the to-be-treated test piece is uniformly heated in the annealing process, and pattern defects of the ejector pin are reduced or avoided. In addition, the utility model further provides a supporting device comprising a heater and the supporting ejector pin.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor equipment, and particularly to a support thimble and a support device applying the same. Background Art

[0002] The semiconductor heat treatment process is an essential key step in the semiconductor manufacturing process and has a crucial impact on the performance and reliability of semiconductor devices. Heat treatment technologies include diffusion, oxidation, annealing, and rapid heat treatment, etc., which are widely used in processes such as film formation and deposition in semiconductor processing. Among them, the thermal annealing process is a heat treatment process. By heating and cooling the semiconductor material at a high temperature, it can eliminate the crystal defects of the semiconductor material, improve the crystal quality and electrical properties of the material, and enhance the performance and reliability of semiconductor devices.

[0003] Currently, when annealing a semiconductor material, a thimble is often used to support the semiconductor specimen to be processed. During the heat treatment process, thimble pattern defects such as scratch defects and slip defects often occur at the contact position between the thimble and the semiconductor specimen to be processed. For example, when using a thimble to lift a wafer and perform a thermal annealing process on the wafer, the temperature distribution in the contact area between the thimble and the wafer is likely to be uneven, and it is impossible to ensure that it is in the same temperature field as other areas of the wafer, making it extremely easy for thimble pattern defects to appear in the contact area between the thimble and the wafer. Summary of the Utility Model

[0004] The purpose of this application is to provide a support thimble and a support device applying the same, which are used to solve the problem that thimble pattern defects are likely to occur in the contact area between the thimble and the specimen to be processed in the prior art, and can improve the uniformity of the temperature distribution on the surface of the specimen to be processed during the annealing process, and effectively reduce the generation of thimble image defects.

[0005] To achieve the above and other related purposes, this application provides a support thimble, which is applied to the heat treatment process of a specimen to be processed, including a thimble body. The thimble body includes a main body part and a top support. The main body part has a first through hole and a first surface and a second surface oppositely arranged along the central axis direction of the thimble body. The first through hole penetrates the main body part along the central axis, so that both the first surface and the second surface are in a ring structure. The top support is connected to the first surface around the first through hole. The top support has an arc surface protruding in the direction away from the second surface along the central axis, and the specimen to be processed is placed on the arc surface of the top support.

[0006] Optionally, the thickness between the inner wall surface and the outer wall surface of the main body part is set to be of equal thickness.

[0007] Optionally, the first surface is one of a polygonal ring structure, an elliptical ring structure, and a circular ring structure, and the outer peripheral contour structure of the second surface is the same as that of the first surface.

[0008] Optionally, in a top view of the main body along the axis direction of the thimble body, the outer peripheral contour line of the first surface is located inside the outer peripheral contour line of the second surface.

[0009] Optionally, in a top view of the main body along the axis direction of the thimble body, the outer peripheral contour line of the second surface is located inside the outer peripheral contour line of the first surface.

[0010] Optionally, in a top view of the main body along the axis direction of the thimble body, the outer peripheral contour line of the first surface coincides with the outer peripheral contour line of the second surface.

[0011] Optionally, the main body is a frustum-shaped structure or a cylindrical structure, and the outer diameter of the first surface is less than or equal to the outer diameter of the second surface.

[0012] Optionally, the outer diameter of the first surface is less than 1000 μm, and the inner diameter of the first surface is 250 μm to 950 μm.

[0013] Optionally, the outer diameter of the first surface is less than 300 μm, and the inner diameter of the first surface is 200 μm to 250 μm.

[0014] The present application further provides a support device for supporting a specimen to be processed for a heat treatment process, including a heater and a plurality of the support thimbles as described in any of the foregoing embodiments that are spaced apart from each other. The heater is located in the first through hole of the support thimble to heat the thimble body and the surface of the specimen to be processed exposed by the first through hole.

[0015] The support thimble and the support device applying the same provided by the present application have at least the following beneficial effects:

[0016] In the first aspect, a first through hole is provided in the thimble body, so that the thimble body has a hollow structure. Through the heater, the thimble body and the surface of the specimen to be processed exposed by the first through hole can be heated, effectively improving the uniformity of the surface temperature distribution of the specimen to be processed.

[0017] In the second aspect, the arc-shaped surface of the top support enables the support thimble to be in line contact with the surface of the specimen to be processed, effectively reducing the contact area between the support thimble and the surface of the specimen to be processed. At the same time, it ensures full and effective contact between the support thimble and the surface of the specimen to be processed, preventing scratch defects and slip defects on the contact surface between the specimen to be processed and the support thimble, and further improving the uniformity of the surface temperature distribution of the specimen to be processed.

[0018] In a third aspect, the structure of the main body is a frustum-shaped structure that is smaller at the top and larger at the bottom. By controlling the dimensions of the inner diameter and outer diameter of the first surface, the contact area between the support ejector pin and the surface of the specimen to be processed is further reduced, so that the contact area between the specimen to be processed and the support ejector pin has the same temperature field as other areas of the specimen to be processed, further improving the uniformity of the temperature distribution on the surface of the specimen to be processed, enabling the specimen to be processed to be uniformly heated during the annealing process, reducing or avoiding the occurrence of ejector pin pattern defects, and improving the stability of the support ejector pin. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application and should not be regarded as limiting the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without creative efforts.

[0020] Figure 1 Shows a schematic structural diagram of an ejector pin in the prior art.

[0021] Figure 2 Shows a schematic structural diagram of another ejector pin in the prior art.

[0022] Figure 3 Shows a schematic structural diagram of an ejector pin with a flat top structure in the prior art.

[0023] Figure 4 Shows a schematic structural diagram of the support ejector pin provided in the first embodiment of the present application.

[0024] Figure 5 Shows Figure 4 The specific structural schematic diagram of the support ejector pin shown.

[0025] Figure 6 Shows Figure 4 The structural schematic diagram of the top support in the support ejector pin shown.

[0026] Figure 7 Shows a schematic structural diagram of the main body of the support ejector pin provided in the first embodiment of the present application.

[0027] Figure 8 Shows a schematic structural diagram of the main body of the frustum-shaped structure that is smaller at the top and larger at the bottom provided in the first embodiment of the present application.

[0028] Figure 9 Shows a schematic structural diagram of the main body of the frustum-shaped structure that is larger at the top and smaller at the bottom provided in the first embodiment of the present application.

[0029] Figure 10It shows a schematic structural diagram of the cylindrical structure main body provided in the first embodiment of the present application.

[0030] Figure 11 It shows a schematic structural diagram of the support device provided in the second embodiment of the present application.

[0031] Schematic illustration of reference numerals:

[0032] 1. Thimble; 11. Solid front end; 12. Support part; 2. Support thimble; 21. Thimble body; 211. Main body part; 2111. First through hole; 2112. First surface; 2113. Second surface; 212. Top support; 2121. Arc-shaped front end; 22. Heater; 3. Specimen to be processed; 4. Heating device. Detailed description of specific embodiments

[0033] To make the technical objectives, technical solutions and technical effects of the present application clearer, the technical solutions in the present application will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Usually, the components of the embodiments of the present application described and illustrated herein can be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the present application claimed, but merely represents the selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts fall within the scope of protection of the present application. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0035] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present application.

[0036] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. In addition, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in combination with the implementation or example are included in at least one implementation or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same implementation or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more implementations or examples in a suitable scheme.

[0037] In the prior art, reference Figure 1 and Figure 2 In the field of semiconductor processing, the ejector pin 1 used to support the specimen to be processed often adopts a cap-shaped structure. Specifically, the ejector pin in the prior art includes a solid front end portion 11 and a support portion 12. The solid front end portion 11 is a contact end for lifting the specimen to be processed, and the support portion 12 is used to support the solid front end portion. The area where the solid front end portion 11 contacts the specimen to be processed 3 is a solid body. In actual applications, the inventors found that the solid front end portion 11 of the solid body heats slower and takes longer to heat than other areas of the specimen to be processed 3 that are in contact with it. It is difficult to maintain a consistent temperature with the heating device 4 of the specimen to be processed 3, resulting in poor uniformity of temperature distribution on the surface of the specimen to be processed 3, and ejector pin pattern defects are very likely to occur. In addition, referring to Figure 3 Some ejector pins 1 have a flat top structure at the solid front end, and a built-in heater is used to heat the ejector pin. Since the flat top structure of the ejector pin 1 has a large contact area with the specimen to be processed, when the built-in heater 22 is used for heating, it cannot be effectively ensured that the contact area between the ejector pin 1 and the specimen to be processed 3 and other areas of the specimen to be processed are in the same temperature field, so ejector pin pattern defects are also prone to occur.

[0038] Embodiment 1

[0039] Based on the above technical problems in the prior art, this embodiment provides a support pin 2, which is applied to the heat treatment process of a sample 3 to be processed. Optionally, the sample 3 to be processed may be a semiconductor device such as a wafer, and the heat treatment process may be an annealing process. Figure 4 and Figure 5 The supporting ejector pin 2 of this embodiment includes an ejector pin body 21 .

[0040] The thimble body 21 includes a main body portion 211 and a top support 212. The main body portion 211 has a first surface 2112 and a second surface 2113 that are oppositely arranged along the central axis direction of the thimble body 21. The main body portion 211 also has a first through hole 2111 that penetrates the main body portion 211 along the central axis of the thimble body 21, such that both the first surface 2112 and the second surface 2113 are in a ring structure. The inner wall surface of the main body portion 211 is a flat surface along the direction from the first surface 2112 to the second surface 2113. Optionally, the thickness between the inner wall surface and the outer wall surface of the main body portion 211 is set to be equal. Here, the equal thickness setting can be understood as that the thickness between the inner wall surface and the outer wall surface at different positions of the main body portion 211 is the same. The top support 212 is connected to the first surface 2112 of the main body portion 211 around the first through hole 2111. And the top support 212 has an arc surface that protrudes in the direction away from the second surface 2113 along the central axis. The specimen to be processed 3 is placed on the arc surface of the top support 212.

[0041] In an alternative embodiment, referring to Figure 6 , the top support 212 has an arc-shaped front end 2121 at the end away from the second surface 2113. The structure of the arc-shaped front end 2121 is a ring-shaped arc protrusion structure, and the axial cross-sectional structure of the ring-shaped arc protrusion structure of the arc-shaped front end 2121 is the same as the cross-sectional structure of a bullet head. During use, the specimen to be processed 3 is placed on the arc-shaped front end 2121, and a line contact is formed between the arc-shaped front end 2121 and the surface of the specimen to be processed 3.

[0042] In this embodiment, by providing the first through hole 2111 in the thimble body 21, the thimble body 21 can be made into a hollow structure, and the thimble body 21 is set with equal thickness. During use, the heater 22 can be used to heat the thimble body 21 and the surface of the specimen to be processed 3 exposed in the first through hole 2111, effectively improving the uniformity of the temperature distribution on the surface of the specimen to be processed 3. In addition, the arc surface of the top support 212 can achieve a line contact between the support thimble 2 and the surface of the specimen to be processed 3, reducing the contact area with the surface of the specimen to be processed 3. And the arc surface of the top support 212 can make the support thimble 2 and the surface of the specimen to be processed 3 contact fully and effectively, preventing scratch defects and slip defects from occurring on the contact surface between the specimen to be processed 3 and the support thimble 2. Through the heat conduction effect, the contact area between the specimen to be processed 3 and the support thimble 2 has the same temperature field as other areas on the surface of the specimen to be processed 3, improving the uniformity of the temperature distribution on the surface of the specimen to be processed 3, enabling the surface of the specimen to be processed 3 to be heated evenly, ensuring the uniformity during the annealing process of the surface of the specimen to be processed 3, and effectively reducing the occurrence of thimble pattern defects.

[0043] Referring to Figures 7 to 10, the main body 211 is in a trapezoidal structure or a columnar structure. The outer contour structures of the first surface 2112, the outer contour structures of the second surface 2113, and the outer contour structures of the cross-section of the main body 211 between the first surface 2112 and the second surface 2113 are the same. The first surface 2112 is one of a polygonal ring structure, an elliptical ring structure, and a circular ring structure.

[0044] In an alternative embodiment, referring to Figure 8 , in the top view of the main body 211 along the axis direction of the ejector body 21, the outer contour line of the first surface 2112 is located inside the outer contour line of the second surface 2113, which means that the overall size of the first surface 2112 is smaller than the overall size of the second surface 2113. The main body 211 is in a trapezoidal structure with a smaller top and a larger bottom. And the main body 211 can be a polygonal trapezoidal structure, such as a triangular trapezoidal structure, or can be an elliptical trapezoidal structure, or can be a circular trapezoidal structure.

[0045] In an alternative embodiment, referring to Figure 9 , in the top view of the main body 211 along the axis direction of the ejector body 21, the outer contour line of the second surface 2113 is located inside the outer contour line of the first surface 2112, which means that the overall size of the second surface 2113 is smaller than the overall size of the first surface 2112. The main body 211 is in a trapezoidal structure with a larger top and a smaller bottom. And the main body 211 can be a polygonal trapezoidal structure, such as a triangular trapezoidal structure, or can be an elliptical trapezoidal structure, or can be a circular trapezoidal structure.

[0046] In an alternative embodiment, referring to Figure 10 , in the top view of the main body 211 along the axis direction of the ejector body 21, the outer contour line of the first surface 2112 coincides with the outer contour line of the second surface 2113, which means that the overall size of the first surface 2112 is equal to the overall size of the second surface 2113. The main body 211 is in a columnar structure. And the main body 211 can be a polygonal columnar structure, such as a triangular columnar structure, or can be an elliptical columnar structure, or can be a circular columnar structure.

[0047] In this embodiment, referring to Figure 7, the structure of the main body 211 is preferably a frustum structure or a cylindrical structure, and both the first surface 2112 and the second surface 2113 are circular ring structures. Among them, the outer diameter of the first surface 2112 is less than or equal to the outer diameter of the second surface 2113. The outer diameter of the first surface 2112 refers to the diameter of the outer circle of the circular ring structure of the first surface 2112, and the outer diameter of the second surface 2113 refers to the diameter of the outer circle of the circular ring structure of the second surface 2113. When the outer diameter of the first surface 2112 is less than the outer diameter of the second surface 2113, the main body 211 is a frustum structure; when the outer diameter of the first surface 2112 is the same as the outer diameter of the second surface 2113, the main body 211 is a cylindrical structure.

[0048] In an alternative embodiment, both the first surface 2112 and the second surface 2113 are circular ring structures. The outer diameter of the first surface 2112 is less than 1000 μm, and the inner diameter of the first surface 2112 is 250 μm - 950 μm. Among them, the inner diameter of the first surface 2112 refers to the diameter of the inner circle of the circular ring structure of the first surface 2112.

[0049] In an alternative embodiment, both the first surface 2112 and the second surface 2113 are circular ring structures. The outer diameter of the first surface 2112 is less than 300 μm, the inner diameter of the first surface 2112 is 200 μm - 250 μm, and the outer diameter of the first surface 2112 is less than the outer diameter of the second surface 2113, and the inner diameter of the first surface 2112 is less than the inner diameter of the second surface 2113, so that the main body 211 has a frustum structure with a smaller upper part and a larger lower part.

[0050] During use, compared with the second surface 2113, the first surface 2112 is the surface of the main body 211 close to the test piece 3 to be processed. By controlling the inner diameter of the first surface 2112 to be greater than 200 μm, the support effect on the test piece 3 to be processed can be ensured, and the first through hole 2111 has sufficient space to install the heater 22 during use; by controlling the outer diameter of the first surface 2112 to be less than 300 μm, the contact area between the support pin 2 and the test piece 3 to be processed can be reduced, the uniformity of the surface temperature distribution of the test piece 3 to be processed can be improved, the uniformity of the surface of the test piece 3 to be processed during the annealing process can be ensured, and the occurrence of pin pattern defects can be effectively reduced; by making the outer diameter of the first surface 2112 less than the outer diameter of the second surface 2113, so that the main body 211 forms a frustum structure with a smaller upper part and a larger lower part, the structural stability of the support pin 2 can be improved.

[0051] In this embodiment, the material of the supporting ejector pin 2 is a high-temperature resistant material such as quartz or silicon carbide. Optionally, the material of the supporting ejector pin 2 is quartz. The supporting ejector pin 2 made of quartz has excellent heat conduction performance. When in use, when the heater 22 is used to heat the supporting ejector pin 2 and the surface of the test piece 3 to be processed exposed in the first through hole 2111, it can ensure that the temperature of the ejector pin body 21 is the same as the temperature of the surface of the test piece 3 to be processed, so that the contact area between the test piece 3 to be processed and the supporting ejector pin 2 has the same temperature field as other areas of the test piece 3 to be processed, achieving the purpose of uniform annealing.

[0052] In the supporting ejector pin 2 of this embodiment, a first through hole 2111 is provided in the ejector pin body 21, so that the ejector pin body 21 has a hollow structure, and the ejector pin body 21 is provided with equal thickness. When in use, the heater 22 can be used to heat the ejector pin body 21 and the surface of the test piece to be processed exposed in the first through hole 2111, effectively improving the uniformity of the surface temperature distribution of the test piece 3 to be processed; the arc surface of the top support 212 can make the supporting ejector pin 2 in line contact with the surface of the test piece 3 to be processed, effectively reducing the contact area with the surface of the test piece 3 to be processed, while ensuring sufficient and effective contact between the supporting ejector pin 2 and the surface of the test piece 3 to be processed, preventing scratch defects and slip defects from occurring on the contact surface between the test piece 3 to be processed and the supporting ejector pin 2; the structure of the main body portion 211 is controlled to be a frustum-shaped structure with a smaller upper part and a larger lower part, and the dimensions of the outer diameter and inner diameter of the first surface 2112 are controlled, further reducing the contact area between the supporting ejector pin 2 and the surface of the test piece 3 to be processed, so that the contact area between the test piece 3 to be processed and the supporting ejector pin 2 has the same temperature field as other areas of the test piece 3 to be processed, further improving the uniformity of the surface temperature distribution of the test piece 3 to be processed, enabling the test piece 3 to be heated uniformly during the annealing process, effectively reducing the occurrence of ejector pin pattern defects, and improving the stability of the supporting ejector pin 2.

[0053] Embodiment Two

[0054] This embodiment provides a supporting device for supporting the test piece 3 to be processed to perform a heat treatment process. The test piece 3 to be processed can be a semiconductor device such as a wafer, etc. Refer to Figure 5 and Figure 11 , the supporting device of this embodiment includes a heater 22 and a plurality of supporting ejector pins 2 arranged at intervals. The supporting ejector pin 2 is any one of the supporting ejector pins in Embodiment One. The heater 22 is located in the first through hole 2111 and can heat the ejector pin body 21 and the surface of the test piece 3 to be processed exposed by the first through hole 2111.

[0055] In an alternative embodiment, the supporting device includes three supporting thimbles 2 arranged at intervals from each other. The lines connecting the three supporting thimbles 2 form an equilateral triangle structure. The specimen 3 to be processed is placed on the top support 212 of the supporting thimble 2. A heating device 4 is arranged above the specimen 3 to be processed to heat the specimen 3 to be processed. The heater 22 in the first through hole 2111 of the supporting thimble 2 can heat the supporting thimble 2 and the surface of the specimen 3 to be processed exposed in the first through hole 2111, so as to perform temperature compensation on the hollow area of the specimen 3 to be processed corresponding to the supporting thimble 2, and make the contact area between the specimen 3 to be processed and the supporting thimble 2 maintain the same temperature field as other areas of the specimen 3 to be processed, thereby ensuring the annealing uniformity of the specimen 3 to be processed and reducing or avoiding the occurrence of thimble pattern defects.

[0056] In an alternative embodiment, the heater 22 can be one of a laser heater 22, an air heater 22, an electric heater 22, or can also be other suitable types of heaters 22. The heater 22 is disposed in the first through hole 2111. For example, the heater 22 can be disposed at one end of the first through hole 2111 close to the second surface 2113, or located in the central area between the second surface 2113 and the first surface 2112.

[0057] The supporting device of this embodiment includes any one of the supporting thimbles 2 in the first embodiment, so it also has the beneficial effects of the first embodiment.

[0058] The above embodiments merely illustrate the principles and effects of the present application by way of example, rather than limiting the present application. Any person familiar with this technology can modify, change or combine the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present application should still be covered by the claims of the present application.

Claims

1. A support ejector pin, used in a heat treatment process of a specimen to be treated, characterized in that: The invention comprises an ejector body, wherein the ejector body comprises a main body and a top support, wherein the main body has a first through hole and a first surface and a second surface which are arranged opposite to each other along the central axis of the ejector body, wherein the first through hole penetrates the main body along the central axis so that the first surface and the second surface are both annular structures, wherein the top support surrounds the first through hole and is connected to the first surface, wherein the top support has an arc-shaped surface which protrudes along the central axis in a direction away from the second surface, and wherein the specimen to be processed is placed on the arc-shaped surface of the top support.

2. The supporting ejector pin according to claim 1, characterized in that: The thickness between the inner wall surface of the main body and the outer wall surface of the main body is set to be equal.

3. The supporting ejector pin according to claim 1, characterized in that: The first surface is one of a polygonal annular structure, an elliptical annular structure and a circular annular structure, and the peripheral contour structure of the second surface is the same as the peripheral contour structure of the first surface.

4. The supporting ejector pin according to claim 3, characterized in that: In a top view of the main body along the axis of the ejector body, the outer contour line of the first surface is located inside the outer contour line of the second surface.

5. The supporting ejector pin according to claim 3, characterized in that: In a top view of the main body along the axis of the ejector body, the outer contour line of the second surface is located inside the outer contour line of the first surface.

6. The supporting ejector pin according to claim 3, characterized in that: In a top view of the main body along the axis of the ejector body, the outer contour line of the first surface coincides with the outer contour line of the second surface.

7. The supporting ejector pin according to claim 3, characterized in that: The main body is a truncated cone or a cylindrical structure, and the outer diameter of the first surface is smaller than or equal to the outer diameter of the second surface.

8. The supporting ejector pin according to claim 7, characterized in that: The outer diameter of the first surface is less than 1000 μm, and the inner diameter of the first surface is 250 μm to 950 μm.

9. The supporting ejector pin according to claim 7, characterized in that: The outer diameter of the first surface is less than 300 μm, and the inner diameter of the first surface is 200 μm to 250 μm.

10. A supporting device for supporting a specimen to be treated for a heat treatment process, characterized in that: The invention comprises a heater and a plurality of support pins as claimed in any one of claims 1 to 9 which are arranged at intervals from each other, wherein the heater is located in a first through hole of the support pin to heat the pin body and the surface of the specimen to be processed exposed by the first through hole.

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