Chemical source storage device and thin film deposition system

Abstract

The utility model discloses a chemical source storage device and a thin film deposition system. The chemical source storage device is used for providing a chemical source for a reaction cavity of the thin film deposition system; the chemical source storage device comprises a storage container, an atomization base, a carrier gas assembly and an output assembly. The storage container is used for storing a liquid chemical source; the atomizing base is arranged in the storage container and is higher than the liquid level of the chemical source; one end of the carrier gas assembly is connected to the storage container, and the carrier gas assembly is used for inputting high-pressure gas into the storage container and driving the chemical source to impact the atomization base so as to form an atomized chemical source; one end of the output assembly is connected to the storage container, and the other end of the output assembly is coupled to the reaction cavity and used for outputting the atomized chemical source to the reaction cavity. The chemical source is driven by high-pressure gas provided by the gas carrying assembly to impact the atomization base, so that the chemical source is atomized to form a particle state, the surface area of the chemical source is increased, the total amount of the chemical source brought out of the storage container is increased, and sufficient chemical source is provided for the reaction cavity.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and particularly relates to a chemical source storage device and a thin film deposition system. Background Art

[0002] At present, the atomic layer deposition process can be divided into the following main steps: 1) introducing chemical source A into the reaction chamber; 2) introducing an inert gas into the reaction chamber for purging; 3) introducing chemical source B into the reaction chamber; 4) introducing an inert gas into the reaction chamber for purging; repeating the above steps for multiple cycles to obtain a thin film with a certain thickness.

[0003] During the atomic layer deposition process, the stable input of the chemical source into the reaction chamber in each cycle is particularly crucial for the comprehensive quality of the thin film; if the chemical source is a liquid source or a solid source, a Carrier is required to carry the chemical source out of the source container.

[0004] At room temperature, the saturated vapor pressure of some chemical sources is relatively low. To ensure sufficient and sustainable output of the chemical source, the storage device of the chemical source needs to be heated to a certain temperature (usually heated by a heating tape) to increase its saturated vapor pressure, thereby meeting the sustainable output of the chemical source; however, it is easy to cause fluctuations in the saturated vapor pressure of the chemical source due to the temperature uniformity problem of the heating tape, resulting in insufficient output of the chemical source in each cycle, and further leading to insufficient atomic layer deposition reaction. Summary of the Utility Model

[0005] The purpose of the utility model is to provide a chemical source storage device and a thin film deposition system, aiming to solve the problem that during the process of heating the liquid chemical source to generate vapor and outputting it to the reaction chamber in the prior art, the saturated vapor pressure of the chemical source is easily changed due to uneven heating temperature, resulting in insufficient output of the chemical source in each cycle, and further leading to insufficient atomic layer deposition reaction.

[0006] To solve the above technical problems, the purpose of the utility model is achieved through the following technical solutions: providing a chemical source storage device for providing a chemical source to the reaction chamber of a thin film deposition system; the chemical source storage device includes:

[0007] A storage container for storing a liquid chemical source;

[0008] An atomization base is arranged in the storage container and is higher than the liquid level of the chemical source;

[0009] A carrier gas assembly is connected to one end of the storage container for inputting high-pressure gas into the storage container and driving the chemical source to impact the atomization base to form an atomized chemical source;

[0010] An output component, one end of which is connected to the storage container and the other end of which is coupled to the reaction chamber and is used for outputting the atomized chemical source to the reaction chamber.

[0011] Further, one end of the carrier gas component penetrates upward through the bottom of the storage container and corresponds to be below the atomization base, and one end of the carrier gas component is higher than the liquid level height of the chemical source;

[0012] A liquid guiding component is arranged in the storage container around one end of the carrier gas component. The liquid guiding component is used for guiding the chemical source to impact the atomization base along the liquid guiding component under the guidance of the pressure difference generated around one end of the carrier gas component when the carrier gas component outputs high-pressure gas at one end.

[0013] Further, the liquid guiding component includes:

[0014] A convex part, which is arranged on the inner bottom of the storage container and the top of which is higher than the liquid level height of the chemical source;

[0015] A sleeve, which is sleeved on the outer periphery of the convex part and forms a liquid guiding gap with the convex part;

[0016] Wherein, one end of the carrier gas component is connected to the bottom of the storage container and penetrates upward to the top of the convex part.

[0017] Further, the shape of the liquid guiding gap is conical and the top of the liquid guiding gap surrounds the outer periphery of one end of the carrier gas component.

[0018] Further, a liquid level detector for detecting the liquid level height of the chemical source is arranged in the storage container.

[0019] Further, the carrier gas component includes:

[0020] A carrier gas pipe fitting, one end of which is connected to the bottom of the storage container and the other end of which is connected to an external high-pressure gas supply source;

[0021] A first valve component, which is arranged on the carrier gas pipe fitting and is used for controlling the on-off of the carrier gas pipe fitting.

[0022] Further, the output component includes:

[0023] An output pipe fitting, one end of which is connected to the top of the storage container and the other end of which is coupled to the reaction chamber;

[0024] A second valve component, which is arranged on the carrier gas pipe fitting and is used for controlling the on-off of the output pipe fitting.

[0025] An embodiment of the present invention further provides a thin film deposition system, which includes a reaction chamber and the chemical source storage device as described above, and the chemical source storage device is coupled to the reaction chamber through an output component.

[0026] Further, the thin film deposition system further includes:

[0027] A gas delivery manifold valve seat, connected to the inlet of the reaction chamber; the other end of the output component is connected to the gas delivery manifold valve seat, and the atomized chemical source enters the reaction chamber after passing through the gas delivery manifold valve seat;

[0028] A dilution component, with one end connected to an external dilution gas source and the other end connected to the gas delivery manifold valve seat and used to mix and dilute the dilution gas with the atomized chemical source and then enter the reaction chamber.

[0029] Further, the thin film deposition system further includes an external test component. One end of the external test component is connected to the gas delivery manifold valve seat through a valve, and the other end of the external test component is connected to an external chemical source detector.

[0030] The beneficial effects of the embodiments of the present invention are as follows: The method of increasing the saturated vapor pressure of the chemical source by heating in the prior art is cancelled, and the problem of the change in the saturated vapor pressure of the chemical source caused by uneven heating temperature is completely avoided. The high-pressure gas provided by the carrier gas component drives the chemical source to impact the atomization base, so that the chemical source is atomized into a particulate state, increasing the surface area of the chemical source, and further increasing the total amount of the chemical source taken out of the storage container, providing sufficient chemical source for the reaction chamber. Description of the Drawings

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0032] Figure 1 It is a schematic structural diagram of the thin film deposition system provided by the embodiments of the present invention.

[0033] Figure 2 It is a schematic structural diagram of the chemical source storage device provided by the embodiments of the present invention.

[0034] Explanation of the reference numerals in the drawings:

[0035] 1. Chemical source storage device; 11. Storage container; 111. Protrusion; 112. Sleeve; 113. Liquid guiding gap; 12. Atomization base; 13. Carrier gas component; 131. Carrier gas pipe fitting; 132. First automatic valve; 133. First manual valve; 134. First flowmeter; 14. Output component; 141. Output pipe fitting; 142. Second automatic valve; 142. Second manual valve; 15. Liquid level detector;

[0036] 2. Gas delivery manifold valve seat;

[0037] 3. Dilution assembly;

[0038] 4. External test assembly. Detailed implementation manner

[0039] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0040] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprise" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0041] It should also be understood that the terms used in this specification of the present utility model are only for the purpose of describing specific embodiments and are not intended to limit the present utility model. As used in this specification of the present utility model and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.

[0042] It should be further understood that the term " / and / " used in this specification of the present utility model and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0043] Combined with Figure 1 and Figure 2 , the embodiment of the present utility model provides a chemical source storage device 1 for providing a chemical source to a reaction chamber (not shown in the figure) of a thin film deposition system; the chemical source storage device 1 includes: a storage container 11, an atomization base 12, a carrier gas assembly 13, and an output assembly 14.

[0044] The storage container 11 is used to store the liquid chemical source; the atomization base 12 is disposed in the storage container 11 and is higher than the liquid level of the chemical source; one end of the carrier gas assembly 13 is connected to the storage container 11, and the carrier gas assembly 13 is used to input high-pressure gas into the storage container 11 and drive the chemical source to impact the atomization base 12 to form an atomized chemical source; one end of the output assembly 14 is connected to the storage container 11, and the other end of the output assembly 14 is coupled to the reaction chamber and is used to output the atomized chemical source to the reaction chamber.

[0045] In this embodiment, the atomization base 12 can be arranged at the inner top of the storage container 11. The atomization base 12 can be a block structure integrally formed at the inner top of the storage container 11, or can be fixed to the block structure at the inner top of the storage container 11 in a split manner. One end of the carrier gas assembly 13 is connected to the storage container 11 and corresponds to be below the atomization base 12. Based on this, the high-pressure gas provided by the carrier gas assembly 13 can drive the chemical source to impact the atomization base 12, so that the chemical source is atomized into a particulate state, increasing the surface area of the chemical source, and further increasing the total amount carried out of the storage container 11. Then, the output assembly 14 provides a sufficient chemical source for the reaction chamber; thereby ensuring the atomic layer deposition reaction effect in the reaction chamber.

[0046] Compared with the prior art, this embodiment cancels the existing method of increasing the saturated vapor pressure of the chemical source by heating, and completely avoids the problem of the change of the saturated vapor pressure of the chemical source caused by uneven heating temperature. And after canceling the heating structure, the cost is effectively reduced.

[0047] In one embodiment, one end of the carrier gas assembly 13 penetrates upward through the bottom of the storage container 11 and corresponds to be below the atomization base 12, and one end of the carrier gas assembly 13 is higher than the liquid level height of the chemical source; a liquid guiding assembly is arranged in the storage container 11 around one end of the carrier gas assembly 13. The liquid guiding assembly is used to guide the chemical source to impact the atomization base 12 along the liquid guiding assembly under the guidance of the pressure difference generated around one end of the carrier gas assembly 13 when the high-pressure gas is output from one end of the carrier gas assembly 13.

[0048] In this embodiment, one end of the carrier gas assembly 13 can be arranged at a position slightly higher than the liquid level height of the chemical source. In this way, when the high-pressure gas is input into the storage container 11 from one end of the carrier gas assembly 13, the high-flow movement of the high-pressure gas will cause a pressure difference around one end of the carrier gas assembly 13, that is, the surrounding pressure will become smaller. The surrounding chemical source will be affected by the pressure difference and exert a force on the side with a smaller pressure, so as to be guided to one end of the carrier gas assembly 13. Furthermore, part of the chemical source will impact the atomization base 12 together with the high-pressure gas to form an atomized particulate state.

[0049] In one embodiment, the liquid guiding assembly includes a protrusion 111 and a sleeve 112; the protrusion 111 is arranged at the inner bottom of the storage container 11 and the top is higher than the liquid level height of the chemical source; the sleeve 112 is sleeved on the outer periphery of the protrusion 111 and a liquid guiding gap 113 is formed between the sleeve 112 and the protrusion 111; wherein, one end of the carrier gas assembly 13 is connected to the bottom of the storage container 11 and penetrates upward to the top of the protrusion 111.

[0050] In this embodiment, the convex part 111 can be integrally formed by protruding upward from the inner bottom of the storage container 11, or can be fixed to the inner bottom of the storage container 11 in a split manner; the shape of the sleeve 112 is the same as that of the convex part 111 and is slightly larger than the convex part 111 as a whole. The sleeve 112 is sleeved on the convex part 111, and a liquid guiding gap 113 is formed between the inside of the sleeve 112 and the outer wall of the convex part 111. One end of the carrier gas assembly 13 penetrates upward from the bottom of the storage container 11 to the top of the convex part 111, and both the convex part 111 and the sleeve 112 surround the outer periphery of one end of the carrier gas assembly 13, that is, the liquid guiding gap 113 surrounds the outer periphery of one end of the carrier gas assembly 13. When high-pressure gas is input at one end of the carrier gas assembly 13, the chemical source in the liquid guiding gap 113 is more easily affected by the pressure difference and guided to one end of the carrier gas assembly 13 and impacts the atomizing base 12.

[0051] In this embodiment, the overall structure of the liquid guiding assembly is simple, with the advantages of convenient assembly / installation and compact structure, and it is easier to realize the function of guiding the chemical source to impact the atomizing base 12.

[0052] In one embodiment, the shape of the liquid guiding gap 113 is conical and the top of the liquid guiding gap 113 surrounds the outer periphery of one end of the carrier gas assembly 13. That is, the shapes of both the convex part 111 and the sleeve 112 are conical. Based on the guidance of this conical shape, the chemical source can be made to gather towards the conical top, forming a high-speed flow based on Bernoulli's principle, thereby increasing the flow path of the chemical source impacting the atomizing base 12 and further improving the atomizing effect of the chemical source.

[0053] In one embodiment, a liquid level detector 15 for detecting the liquid level height of the chemical source is provided in the storage container 11. The liquid level height of the chemical source can be ensured to be within a preset height range through the liquid level detector 15, that is, at a position slightly lower than one end of the carrier gas assembly 13, which can ensure that the high-pressure gas at one end of the carrier gas assembly 13 can stably drive part of the chemical source to impact the atomizing base 12.

[0054] In one embodiment, the carrier gas assembly 13 includes a carrier gas pipe member 131 and a first valve member; one end of the carrier gas pipe member 131 is connected to the bottom of the storage container 11, and the other end of the carrier gas pipe member 131 is connected to an external high-pressure gas supply source; the first valve member is arranged on the carrier gas pipe member 131 and is used to control the on-off of the carrier gas pipe member 131.

[0055] In this embodiment, the first valve member can include a first automatic valve 132 and a first manual valve 133. During use, the first manual valve 133 is normally open, and the on-off of the carrier gas pipe member 131 is controlled by controlling the first automatic valve 132 to realize the input of high-pressure gas from the high-pressure gas supply source to the storage container 11 through the carrier gas pipe member 131. Among them, the first manual valve 133 can be used as a standby valve to manually control the on-off of the carrier gas pipe member 131 when the first automatic valve 132 fails.

[0056] In this embodiment, a first flowmeter 134 may further be provided on the carrier gas pipe fitting 131 to detect the flow rate of the high-pressure gas input into the storage container 11 through the first flowmeter 134.

[0057] In one embodiment, the output assembly 14 includes an output pipe fitting 141 and a second valve member; one end of the output pipe fitting 141 is connected to the top of the storage container 11, and the other end of the output pipe fitting 141 is coupled to the reaction chamber; the second valve member is provided on the carrier gas pipe fitting 131 and is used to control the on / off of the output pipe fitting 141.

[0058] In this embodiment, the second valve member may include a second automatic valve 142 and a second manual valve 142. During use, the second manual valve 142 is normally open, and the on / off of the output pipe fitting 141 is controlled by controlling the second automatic valve 142, so as to enable the storage container 11 to provide the atomized chemical source to the reaction chamber through the output pipe fitting 141. Among them, the second manual valve can be used as a standby valve to manually control the on / off of the output pipe fitting 141 when the second automatic valve 142 fails.

[0059] The embodiment of the present utility model further provides a thin film deposition system, including a reaction chamber and the chemical source storage device 1 as above, and the chemical source storage device 1 is coupled to the reaction chamber through the output assembly 14.

[0060] In one embodiment, the thin film deposition system further includes a gas delivery manifold valve seat 2 and a dilution assembly 3; the gas delivery manifold valve seat 2 is connected to the inlet of the reaction chamber; the other end of the output assembly 14 is connected to the gas delivery manifold valve seat 2, and the atomized chemical source enters the reaction chamber after passing through the gas delivery manifold valve seat 2; one end of the dilution assembly 3 is connected to an external dilution gas source, and the other end of the dilution assembly 3 is connected to the gas delivery manifold valve seat 2 and is used to mix and dilute the dilution gas with the atomized chemical source and then enter the reaction chamber.

[0061] In this embodiment, the gas delivery manifold valve seat 2 serves as a transfer station between the other end of the output assembly 14 and the reaction chamber. After the atomized chemical source output from the other end of the output assembly 14 reaches the gas delivery manifold, the dilution gas is mixed with the atomized chemical source through the dilution assembly 3 to increase the total gas volume to achieve the purpose of sufficient dilution, and then enters the reaction chamber for deposition reaction.

[0062] In this embodiment, the dilution assembly 3 may be composed of a dilution pipe fitting, a flowmeter, and an automatic / manual valve (which may also be a combination of multiple valves such as an automatic valve or a manual valve).

[0063] In one embodiment, the thin film deposition system further includes an external test assembly 4. One end of the external test assembly 4 is connected to the gas delivery manifold valve seat 2 through a valve, and the other end of the external test assembly 4 is connected to an external chemical source detector.

[0064] In this embodiment, the valve at one end of the external test component 4 is used to control the connection and disconnection of the other end of the output component 14. When the valve at one end of the external test component 4 is opened, the other end of the output component 14 is connected to the external test component 4. When the valve at one end of the external test component 4 is closed, the other end of the output component 14 is connected to the gas delivery manifold valve seat 2. The function of the external test component 4 is to ensure that the atomized chemical source output from the other end of the output component 14 meets the process requirements of the reaction chamber. Before the atomized chemical source enters the reaction chamber, the valve at one end of the external test component 4 is opened, and the atomized chemical source is led out to an external chemical source detector through the external test component 4. After detecting and confirming that the atomized chemical source meets the process requirements, the valve at one end of the external test component 4 is closed, and the atomized chemical source then enters the gas delivery manifold valve seat 2.

[0065] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should all be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A chemical source storage device for providing a chemical source to a reaction chamber of a thin film deposition system; characterized in that, The chemical source storage device includes: a storage container for storing a liquid chemical source; an atomization base disposed within the storage container and higher than the liquid level of the chemical source; a carrier gas assembly having one end connected to the storage container for inputting high-pressure gas into the storage container and driving the chemical source to impact the atomization base to form an atomized chemical source; an output assembly having one end connected to the storage container and the other end coupled to the reaction chamber and for outputting the atomized chemical source to the reaction chamber.

2. The chemical source storage device according to claim 1, characterized in that, One end of the carrier gas assembly penetrates upward through the bottom of the storage container and corresponds to be below the atomization base, and one end of the carrier gas assembly is higher than the liquid level of the chemical source; A liquid guiding assembly is provided within the storage container around one end of the carrier gas assembly. The liquid guiding assembly is configured to guide the chemical source to impact the atomization base along the liquid guiding assembly under the guidance of the pressure difference generated around one end of the carrier gas assembly when high-pressure gas is output from one end of the carrier gas assembly.

3. The chemical source storage device according to claim 2, wherein The liquid guiding assembly includes: a convex portion provided on the inner bottom of the storage container and having a top higher than the liquid level of the chemical source; a sleeve sleeved on the outer periphery of the convex portion and forming a liquid guiding gap between the sleeve and the convex portion; Wherein, one end of the carrier gas assembly is connected to the bottom of the storage container and penetrates upward to the top of the convex portion.

4. The chemical source storage device according to claim 3, characterized in that The shape of the liquid guiding gap is conical and the top of the liquid guiding gap surrounds the outer periphery of one end of the carrier gas assembly.

5. The chemical source storage device according to claim 1, characterized in that, A liquid level detector for detecting the liquid level of the chemical source is provided within the storage container.

6. The chemical source storage device according to claim 1, wherein The carrier gas assembly includes: a carrier gas pipe member having one end connected to the bottom of the storage container and the other end connected to an external high-pressure gas supply source; a first valve member provided on the carrier gas pipe member and for controlling the on / off of the carrier gas pipe member.

7. The chemical source storage device according to claim 1, characterized in that, The output assembly includes: an output pipe member having one end connected to the top of the storage container and the other end coupled to the reaction chamber; a second valve member provided on the carrier gas pipe member and for controlling the on / off of the output pipe member.

8. A thin film deposition system, characterized in that, A reaction chamber and the chemical source storage device according to any one of claims 1 to 7, wherein the chemical source storage device is coupled to the reaction chamber through the output assembly.

9. The thin film deposition system according to claim 8, wherein Further included are: a gas delivery manifold valve seat connected to the inlet of the reaction chamber; the other end of the output assembly is connected to the gas delivery manifold valve seat, and the atomized chemical source enters the reaction chamber after passing through the gas delivery manifold valve seat; a dilution assembly having one end connected to an external dilution gas source and the other end connected to the gas delivery manifold valve seat and for mixing and diluting the dilution gas with the atomized chemical source and then entering the reaction chamber.

10. The thin film deposition system according to claim 9, wherein Further included are: an external test assembly having one end connected to the gas delivery manifold valve seat through a valve and the other end connected to an external chemical source detector.

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