Semiconductor device

Abstract

The utility model provides semiconductor equipment, and relates to the technical field of semiconductors. The semiconductor equipment comprises a cavity, a gas inlet mechanism, a spraying device, a process gas path and a purging gas path, wherein the cavity is used for placing a substrate; the air inlet mechanism is arranged at the bottom of the cavity, the air inlet mechanism is communicated with the cavity, and the air inlet mechanism is used for introducing blowing gas into the cavity; the process gas path is arranged at the top of the cavity, and the process gas path is communicated with the cavity; the spraying device is arranged in the cavity and is close to the process gas path, and the purging gas path is communicated with the process gas path, so that the pollution degree of the substrate can be reduced, and the process quality of the substrate can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly, to a semiconductor device. Background Art

[0002] During the process of a single-chamber device, the cover needs to be frequently opened and closed. Frequent opening and closing of the cover can cause the spraying device and some gas paths to be contaminated, resulting in pollutants such as impurities and dust in the cavity, spraying device, and gas path. However, after placing a substrate in the cavity and closing the cover, when purging the cavity or during the process, the pollutants such as impurities and dust in the cavity, spraying device, and gas path may be purged onto the substrate, causing substrate contamination and affecting the process quality of the substrate. Summary of the Utility Model

[0003] The objectives of this application include, for example, providing a semiconductor device that can reduce the degree of substrate contamination and improve the process quality of the substrate.

[0004] The embodiments of this application can be implemented as follows:

[0005] The embodiments of this application provide a semiconductor device, which includes a cavity, an air inlet mechanism, a spraying device, a process gas path, and a purging gas path. The cavity is used to place a substrate; the air inlet mechanism is arranged at the bottom of the cavity, and the air inlet mechanism is connected to the cavity. The air inlet mechanism is used to introduce purging gas into the cavity; the process gas path is arranged at the top of the cavity, and the process gas path is connected to the cavity; the spraying device is arranged in the cavity, the spraying device is close to the process gas path, and the purging gas path is connected to the process gas path.

[0006] During the purging process, first open the air inlet mechanism, and the air inlet mechanism introduces purging gas into the cavity. The purging gas flows upward in the cavity, taking away the pollutants in the cavity. And when the purging gas passes through the spraying device, it also takes away the pollutants on the spraying device and enters the process gas path, and then brings the pollutants in the process gas path into the purging gas path and discharges them; then close the air inlet mechanism, and introduce process gas into the process gas path. At this time, the process gas will also bring the residual pollutants in the process gas path into the purging gas path and discharge them, thereby reducing the pollutants such as impurities and dust in the cavity, spraying device, and process gas path, and it is not easy to contaminate the substrate during this process, improving the process quality of the substrate. Description of the Drawings

[0007] To more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings required for the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application and should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other relevant drawings can be obtained based on these drawings.

[0008] Figure 1 It is the first schematic diagram of the semiconductor device in the embodiment of the present application;

[0009] Figure 2 It is the schematic diagram for showing the gas flow direction in the embodiment of the present application;

[0010] Figure 3 It is the partial structure schematic diagram of the semiconductor device in the embodiment of the present application;

[0011] Figure 4 It is the second schematic diagram of the semiconductor device in the embodiment of the present application;

[0012] Figure 5 It is the third schematic diagram of the semiconductor device in the embodiment of the present application.

[0013] Icons: 1 - Cavity; 2 - Spraying device; 3 - Process gas path; 31 - First gas section; 32 - Second gas section; 4 - Purge gas path; 41 - Valve; 5 - Confluence gas path; 6 - Intake gas path; 7 - Pumping device; 8 - Gas cabinet; 9 - Substrate. Detailed implementation manners

[0014] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Generally, the components of the embodiments of the present application described and illustrated in the drawings here can be arranged and designed in various different configurations.

[0015] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but merely represents the selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application.

[0016] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0017] In the description of the present application, it should be noted that if terms such as "upper", "lower", "inner", "outer", etc. are used to indicate the orientation or positional relationship, it is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the utility model product is usually placed during use. This is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application.

[0018] In addition, if terms such as "first", "second", etc. are only used for distinguishing descriptions, they cannot be understood as indicating or implying relative importance.

[0019] It should be noted that, without conflict, the features in the embodiments of the present application can be combined with each other.

[0020] The inventors of the present application have found that in the process of a single-chamber device, the cover needs to be frequently opened and closed. Frequent opening and closing of the cover will cause the spraying device and part of the gas path to be contaminated, resulting in pollutants such as impurities and dust in the chamber, spraying device and gas path. However, after placing a substrate in the chamber and closing the cover, when purging the chamber or during the process, the pollutants such as impurities and dust in the chamber, spraying device and gas path may be purged onto the substrate, causing substrate contamination and affecting the process quality of the substrate. The embodiments of the present application provide a semiconductor device, which can reduce the degree of substrate contamination and improve the process quality of the substrate.

[0021] Please refer to Figures 1-3 , the semiconductor device provided by the embodiments of the present application includes a chamber 1, an intake mechanism, a spraying device 2, a process gas path 3 and a purging gas path 4. The chamber 1 is used for placing a substrate 9; the intake mechanism is arranged at the bottom of the chamber 1 and is connected to the chamber 1. The intake mechanism is used for introducing purging gas into the chamber 1; the process gas path 3 is arranged at the top of the chamber 1 and is connected to the chamber 1; the spraying device 2 is arranged in the chamber 1 and is close to the process gas path 3, and the purging gas path 4 is connected to the process gas path 3.

[0022] It should be pointed out that a carrier plate for carrying the substrate 9 is arranged in the chamber 1. When placing the substrate 9, the substrate 9 can be placed on the carrier plate.

[0023] When the intake mechanism introduces purging gas into the chamber 1, the purging gas flows upward in the chamber 1, then enters the process gas path 3, and finally is discharged through the purging gas path 4 connected to the process gas path 3.

[0024] It should be noted that the process gas path 3 is used to introduce process gas from top to bottom. When processing the substrate 9, the process gas enters the cavity 1 through the process gas path 3 and then is sprayed by the spraying device 2 to act on the substrate 9 in the cavity 1. In this embodiment, since a purge gas path 4 is connected to the process gas path 3, the process gas will also enter the purge gas path 4.

[0025] In order to reduce the pollution degree of the substrate 9 and improve the process quality of the substrate 9, first open the intake mechanism. The intake mechanism introduces purge gas into the cavity 1. The purge gas flows from bottom to top in the cavity 1, taking away the pollutants in the cavity 1. And when the purge gas passes through the spraying device 2, it also takes away the pollutants on the spraying device 2 and enters the process gas path 3, and then the pollutants in the process gas path 3 are brought into the purge gas path 4 through the process gas path 3 and discharged; then close the intake mechanism and introduce process gas into the process gas path 3. At this time, the process gas will also bring the pollutants in the process gas path 3 into the purge gas path 4 and discharge them, thereby reducing the presence of pollutants such as impurities and dust in the cavity 1, the spraying device 2 and the process gas path 3, and it is not easy to pollute the substrate 9 during this process, improving the process quality of the substrate 9.

[0026] The process gas path 3 includes a connected first gas section 31 and a second gas section 32. The second gas section is arranged at the top of the cavity 1 and is connected to the cavity 1. The purge gas path 4 is connected to the connection part of the first gas section 31 and the second gas section 32.

[0027] During the process of the purge gas entering the process gas path 3, the purge gas enters the purge gas path 4 through the second gas section 32 to discharge pollutants; after closing the intake mechanism, when introducing process gas into the process gas path 3, at this time the process gas will also bring the pollutants into the purge gas path 4 through the first gas section 31 and discharge them.

[0028] In this embodiment, the number of the process gas paths 3 is multiple. The multiple process gas paths 3 are all arranged at the top of the cavity 1 and are connected to the cavity 1; the number of the purge gas paths 4 is multiple. The multiple purge gas paths 4 are correspondingly connected to the multiple process gas paths 3 one by one; the semiconductor device further includes a converging gas path 5, and the multiple purge gas paths 4 are all connected to the converging gas path 5.

[0029] Different process gas paths 3 are used to introduce different process gases. For example, the number of the process gas paths 3 is three. The three process gas paths 3 are respectively an oxygen source gas path, a nitrogen gas path and a metal source gas path. Among them, the oxygen source gas path is a gas path for providing oxygen, the nitrogen gas path is a gas path for providing nitrogen, and the metal source gas path is a gas path for providing metal source gas (or metal precursor). Among them, oxygen, nitrogen and metal source gas can all be used as process gases, and these process gases play a key role in thin film deposition processes such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

[0030] Of course, it can be understood that the number of process gas paths 3 can be determined according to the actual working conditions and is not limited herein.

[0031] After the intake mechanism introduces the purge gas into the cavity 1, the purge gas flows upward in the cavity 1 from bottom to top. When the purge gas passes through the spraying device 2, it carries away the pollutants on the spraying device 2 and enters the multiple process gas paths 3 respectively. Then, through the multiple process gas paths 3, the pollutants in each process gas path 3 are respectively carried into the multiple purge gas paths 4, and the gases in the multiple purge gas paths 4 converge into the converging gas path 5 and are discharged; Subsequently, the intake mechanism is closed, and process gas is introduced into the multiple process gas paths 3 respectively. At this time, the process gas will also carry the pollutants in the process gas path 3 into their respective purge gas paths 4 and finally converge into the converging gas path 5 and are discharged.

[0032] In other embodiments, the converging gas path 5 can also be cancelled, and the gases in the multiple purge gas paths 4 can be discharged outward respectively.

[0033] In this embodiment, the intake mechanism includes an intake gas path 6 and a purge gas source. The intake gas path 6 is arranged at the bottom of the cavity 1 and is communicated with the cavity 1. The purge gas source is communicated with the intake gas path 6 and is used to introduce the purge gas into the cavity 1 through the intake gas path 6.

[0034] The purge gas source is a device for providing purge gas to the cavity 1. When the purge gas source is turned on, the purge gas source introduces the purge gas into the cavity 1 through the intake gas path 6. Since the intake gas path 6 is arranged at the bottom of the cavity 1, the purge gas flows upward from bottom to top when entering the cavity 1, so that it is not easy to blow the pollutants in the cavity 1 to the surface of the substrate 9.

[0035] Optionally, the purge gas source is a nitrogen gas source or an argon gas source.

[0036] It should be noted that the nitrogen gas source is a device for providing nitrogen. When the purge gas source is a nitrogen gas source, the nitrogen gas source is turned on, and the nitrogen gas source introduces nitrogen into the cavity 1 through the intake gas path 6; The argon gas source is a device for providing argon. When the purge gas source is an argon gas source, the argon gas source is turned on, and the argon gas source introduces argon into the cavity 1 through the intake gas path 6; Among them, both nitrogen and argon can be used as purge gas and can purge the cavity 1, the spraying device 2 and the process gas path 3.

[0037] Of course, the purge gas source is not limited to the above-mentioned nitrogen gas source and argon gas source, and can also be other inert gas sources, as long as the provided inert gas can purge the cavity 1, the spraying device 2 and the process gas path 3, it can be used as the purge gas source.

[0038] Please refer to Figure 4 , in this embodiment, the semiconductor device further includes a pumping device 7, and the pumping device 7 is communicated with the purge gas path 4 to extract the gas in the purge gas path 4.

[0039] The pumping device 7 is connected to the converging gas path 5. When the pumping device 7 is started, the pumping device 7 can pump away the gas that has converged into the converging gas path 5 through multiple purging gas paths 4, making the process of the gas converging into the converging gas path 5 through multiple purging gas paths 4 faster and improving the purging efficiency.

[0040] In other embodiments, if the converging gas path 5 is cancelled, multiple purging gas paths 4 are respectively connected to the pumping device 7. When the pumping device 7 is started, the pumping device 7 can directly pump away the gas in the multiple purging gas paths 4 and timely discharge the gas with pollutants.

[0041] Optionally, the pumping device 7 includes a pump body and a pump pipe. The pump body and the pump pipe are connected, and the pump pipe is connected to the purging gas path 4.

[0042] The pump pipe is connected to the converging gas path 5. When the pump body is started, the pump body can suck the gas that has converged into the converging gas path 5 through multiple purging gas paths 4 into the pump pipe and pump it away, making the process of the gas converging into the converging gas path 5 through multiple purging gas paths 4 faster and improving the purging efficiency. In addition, the pump body can be connected to an external gas treatment device to treat the pollutants in the gas.

[0043] In other embodiments, if the converging gas path 5 is cancelled, multiple purging gas paths 4 are respectively connected to the pump pipe. When the pump body is started, the pump body can directly suck the gas in the multiple purging gas paths 4 into the pump pipe and pump it away; or, the number of pump pipes is multiple, and multiple pump pipes are all connected to the pump body, and the multiple pump pipes are respectively connected to the multiple purging gas paths 4 one by one. When the pump body is started, the pump body can directly suck the gas in the multiple purging gas paths 4 into the multiple pump pipes and pump it away respectively.

[0044] Please refer to Figure 5 , in this embodiment, the semiconductor device further includes a gas cabinet 8. The gas cabinet 8 is arranged on one side of the cavity 1 and is connected to the process gas path 3 for introducing process gas into the process gas path 3.

[0045] It should be noted that the gas cabinet 8 is a device for providing process gas to the process gas path 3. The gas cabinet 8 is simultaneously connected to multiple process gas paths 3 and provides different process gases to the multiple process gas paths 3 respectively.

[0046] After the purging gas source is turned on and the purging gas source introduces purging gas into the cavity 1 through the intake gas path 6, the purging gas source is turned off, and then the gas cabinet 8 is opened. The gas cabinet 8 then introduces process gas into the multiple process gas paths 3. At this time, the process gas in the process gas path 3 takes away the residual pollutants and enters the purging gas path 4, and the pump body then sucks the gas that has converged into the converging gas path 5 through multiple purging gas paths 4 into the pump pipe and pumps it away. In this process, the residual pollutants in the process gas path 3 are removed.

[0047] In this embodiment, a valve 41 is provided on the purging gas path 4.

[0048] Valves 41 are provided on multiple purging gas paths 4. The valve 41 has an open state and a closed state. When the valve 41 is in the open state, the purging gas source is turned on. The purging gas source passes the purging gas into the cavity 1 through the intake gas path 6. The purging gas flows from bottom to top. The purging gas can carry away the contaminants in the cavity 1, the spraying device 2, and the process gas path 3 and enter the purging gas path 4. The gases in multiple purging gas paths 4 converge into the converging gas path 5, and then the pump body sucks the gas that has converged into the converging gas path 5 into the pump pipe and evacuates it; after the purging gas source is turned off, process gas is passed into multiple process gas paths 3 through the gas holder 8. At this time, the process gas in the process gas path 3 carries away the remaining contaminants and enters the purging gas path 4, and then the pump body sucks the gas that has converged into the converging gas path 5 through multiple purging gas paths 4 into the pump pipe and evacuates it, and finally all the valves 41 are closed.

[0049] When the valve 41 is in the closed state, the gas holder 8 passes process gas into multiple process gas paths 3. At this time, the process gas in the process gas path 3 will act on the substrate 9 through the spraying of the spraying device 2. Since most of the contaminants in the cavity 1, the spraying device 2, and the process gas path 3 have been removed at this time, the pollution caused to the substrate 9 is greatly reduced, and thus the process quality of the substrate 9 can be improved.

[0050] Optionally, the valve 41 can be an electric valve or a pneumatic valve. Among them, the electric valve is a valve driven by electricity, and the pneumatic valve is a valve driven by compressed air.

[0051] Of course, the types of the valve 41 are not limited to the above-mentioned electric valve and pneumatic valve, as long as it can adjust the opening and closing of the purging gas path 4.

[0052] Optionally, the semiconductor device further includes a controller, and the controller is electrically connected to the valve 41.

[0053] The opening and closing of the valve 41 can be controlled through the controller, making the working process of the valve 41 more controllable.

[0054] By controlling the valve 41 to open through the controller, the purging gas path 4 is conducted, and the gases in multiple purging gas paths 4 can converge into the converging gas path 5, and then the pump body sucks the gas that has converged into the converging gas path 5 into the pump pipe and evacuates it; after the purging gas source is turned off, process gas is passed into multiple process gas paths 3 through the gas holder 8. At this time, the process gas in the process gas path 3 can also carry away the remaining contaminants and enter the purging gas path 4, and then the pump body sucks the gas that has converged into the converging gas path 5 through multiple purging gas paths 4 into the pump pipe and evacuates it, and then the valve 41 is controlled to close through the controller.

[0055] The technical effects of the semiconductor device provided by the embodiments of the present application at least include: The purge gas flows upward in the cavity 1, taking away the pollutants in the cavity 1 and on the spraying device 2 into the process gas path 3, and then bringing the pollutants in the process gas path 3 into the purge gas path 4 through the process gas path 3 for discharge; The gas cabinet 8 can introduce process gas into multiple process gas paths 3, and the process gas can bring the remaining pollutants into the purge gas path 4 for discharge; The pump body can suck the gas that converges into the confluence gas path 5 from multiple purge gas paths 4 into the pump pipe and extract it, making the process of the gas converging into the confluence gas path 5 faster and improving the purge efficiency; By setting a valve 41 on the purge gas path 4, the on-off of the purge gas path 4 can be controlled, thereby facilitating the switching of the working state of the semiconductor device.

[0056] The working principle of the semiconductor device provided by the embodiments of the present application is as follows: When the valve 41 is in the open state, the purge gas source is turned on, and the purge gas source introduces purge gas into the cavity 1 through the intake gas path 6. The purge gas flows upward, taking away the pollutants in the cavity 1, the spraying device 2, and the process gas path 3 and introducing them into the purge gas path 4. The gas in multiple purge gas paths 4 converges into the confluence gas path 5, and then the pump body sucks the gas that converges into the confluence gas path 5 into the pump pipe and extracts it; Subsequently, the purge gas source is turned off, and process gas is introduced into multiple process gas paths 3 through the gas cabinet 8. At this time, the process gas in the process gas path 3 sends the remaining pollutants into the purge gas path 4, and the pump body continuously sucks the gas that converges into the confluence gas path 5 into the pump pipe and extracts it. Finally, all valves 41 are closed. At this time, most of the pollutants in the cavity 1, the spraying device 2, and the process gas path 3 are removed. When the substrate 9 needs to be processed, process gas is introduced into multiple process gas paths 3 through the gas cabinet 8 again. At this time, the process gas in the process gas path 3 will be sprayed by the spraying device 2 and act on the substrate 9, and the process quality of the substrate 9 can be guaranteed.

[0057] In summary, the embodiments of the present application provide a semiconductor device. The purge gas is introduced into the cavity 1 through the intake mechanism. The purge gas flows upward in the cavity 1, taking the pollutants in the cavity 1, the spraying device 2, and the process gas path 3 into the purge gas path 4 for discharge; After the intake mechanism is closed, process gas is introduced into the process gas path 3. At this time, the process gas can also bring the remaining pollutants in the process gas path 3 into the purge gas path 4 for discharge, thereby reducing the presence of pollutants such as impurities and dust in the cavity 1, the spraying device 2, and the process gas path 3, and it is not easy to pollute the substrate 9 during this process, improving the process quality of the substrate 9.

[0058] As described above, it is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present application should be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims described above.

Claims

1. A semiconductor device, characterized in that, Comprising: A cavity (1) for placing a substrate (9) therein; An intake mechanism disposed at the bottom of the cavity (1) and communicating with the cavity (1), the intake mechanism being configured to introduce a purge gas into the cavity (1); A process gas path (3) disposed at the top of the cavity (1) and communicating with the cavity (1); A spraying device (2) disposed in the cavity (1) and near the process gas path (3); A purge gas path (4) communicating with the process gas path (3).

2. The semiconductor device according to claim 1, wherein, The number of the process gas paths (3) is multiple, and the multiple process gas paths (3) are all disposed at the top of the cavity (1) and communicate with the cavity (1); The number of the purge gas paths (4) is multiple, and the multiple purge gas paths (4) are correspondingly connected to the multiple process gas paths (3) one by one; The semiconductor device further includes a manifold gas path (5), and the multiple purge gas paths (4) are all connected to the manifold gas path (5).

3. The semiconductor device according to claim 1, wherein The intake mechanism includes an intake gas path (6) and a purge gas source. The intake gas path (6) is disposed at the bottom of the cavity (1) and communicates with the cavity (1), and the purge gas source is connected to the intake gas path (6) for introducing a purge gas into the cavity (1) through the intake gas path (6).

4. The semiconductor device according to claim 3, wherein, The purge gas source is an inert gas source.

5. The semiconductor device according to claim 1, wherein The semiconductor device further includes a pumping device (7), the pumping device (7) includes a pump body and a pump pipe, the pump body and the pump pipe are connected in communication, and the pump pipe is connected to the purge gas path (4).

6. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes a gas cabinet (8) disposed on one side of the cavity (1), and the gas cabinet (8) is connected to the process gas path (3) for introducing a process gas into the process gas path (3).

7. The semiconductor device according to claim 1, wherein, A valve (41) is disposed on the purge gas path (4), and the semiconductor device further includes a controller electrically connected to the valve (41).

8. The semiconductor device according to claim 1, wherein, The process gas path (3) is an oxygen source gas path, a nitrogen gas path or a metal source gas path.

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