Semiconductor process machine
By setting up a green light regulator in the semiconductor process machine table to adjust the intensity of green light, the wafer damage caused by photoresist exposure is solved and the product yield is improved.
Patent Information
- Application Number
- CN202421965176.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-08-13
AI Technical Summary
When existing semiconductor process machines use green light for image alignment, they cannot effectively block the photoresist exposure, resulting in damage to the photoresist at the edges of the alignment mark, affecting wafer quality and product yield.
A green light regulator is set up in a semiconductor process machine. By using different sizes of light transmitting sheets to attenuate the green light intensity, avoiding exposure of photoresist at the edges of the mark, including the shell and multiple light transmitting sheets, adjusting the light intensity attenuation ratio to meet different process needs.
By adjusting the intensity of green light, the damage to the photoresist is reduced, the product yield is improved, and the yield per wafer is increased by 5%, avoiding wafer damage.
Smart Images
Figure CN223092848U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductors, and particularly to a semiconductor processing machine. Background Art
[0002] Lithography alignment is one of the core processes in semiconductor integrated circuit manufacturing. Before the wafer is transferred to the processing station for exposure operation, the relative position of the wafer and the reticle is adjusted to ensure that the patterns on the wafer are aligned with the alignment marks on the reticle. The alignment accuracy directly affects the efficiency and yield of the entire manufacturing process.
[0003] Before the exposure of the alignment mark, it is necessary to capture and collect signals. Capture uses both red light and green light simultaneously. The wavelength range of red light is 622 nm to 760 nm, and the wavelength range of green light is 492 nm to 577 nm. Currently, existing machines cannot shield and use only one light source. When using negative photoresist polyimide as the photoresist, since the exposure wavelength range of polyimide is less than 550 nm, the green light will cause the polyimide at the edge of the alignment mark to be exposed, forming polyimide damage (residue), resulting in wafer damage and reducing the product yield. One alignment mark will affect two chips (dies). A wafer has 12 groups of alignment marks in the X and Y directions, which will affect 24 chips.
[0004] Therefore, how to avoid the exposure of the photoresist at the edge of the alignment mark during image alignment is a problem that needs to be solved currently. Summary of the Invention
[0005] The technical problem to be solved by the utility model is how to avoid the exposure of the photoresist at the edge of the alignment mark during image alignment, and to provide a semiconductor processing machine.
[0006] To solve the above problems, the utility model provides a semiconductor processing machine, including: at least one laser light source, the laser light source includes a green light source for emitting green laser light; at least one optical fiber, one end of the optical fiber is connected to the laser light source; a green light regulator is arranged on the optical fiber connected to the green light source. The green light regulator further includes a housing and a plurality of light-transmitting sheets with different sizes. The green light regulator can attenuate the green laser light passing through the light-transmitting sheet, and the light intensity attenuation ratio of the light-transmitting sheet decreases as the size of the light-transmitting sheet increases.
[0007] In some embodiments, the light intensity attenuation ratio range of the green light regulator is 10% to 50%.
[0008] In some embodiments, the green light regulator further includes an incident light position and an emergent light position that are oppositely arranged, and the light-transmitting sheet is disposed at the incident light position of the green light regulator.
[0009] In some embodiments, the green light regulator can adjust the light intensity attenuation ratio of the green light regulator by adjusting light-transmitting sheets of different sizes to the incident light position.
[0010] In some embodiments, the area other than the light-transmitting sheet of the green light regulator is a non-light-transmitting area.
[0011] In some embodiments, the length of the optical fiber is greater than 2 meters.
[0012] In some embodiments, the wavelength range of the green laser is 492 nanometers to 577 nanometers.
[0013] In some embodiments, the laser light source further includes a red light source for emitting red laser light, wherein the wavelength range of the red laser light is 622 nanometers to 760 nanometers.
[0014] In some embodiments, an optical alignment module is further included and is connected to the other end of the optical fiber.
[0015] In some embodiments, the processing machine tool is a polyimide photoresist lithography device.
[0016] Through the above technical solution, by setting a green light regulator with a light-transmitting sheet capable of attenuating green light, the light intensity of the green light emitted by the machine tool is adjusted, so that the green laser is attenuated during alignment in the semiconductor processing machine tool, thereby reducing the damage to the photoresist by the green laser during lithography alignment, and further avoiding damage to the wafer, and improving the product yield to a certain extent. After installing the green light regulator, the light intensity of the green laser is adjusted, and the minimum value (MinNF Green) of the reciprocal of the light intensity of the green laser changes from 154325 to 1662198, and the maximum value (Max NF Green) of the reciprocal of the light intensity of the green laser changes from 490578 to 5293204, and the green light intensity becomes weaker. After installing the green light regulator, the alignment process is carried out in the trial operation group, which not only attenuates the green light intensity so that the polyimide photoresist is not exposed, but also does not affect the normal alignment process, and there is no photoresist damage to the wafer, and the yield of each wafer can be increased by 5%.
[0017] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present invention. Technologies, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technologies, methods, and devices should be regarded as part of the authorization specification. Description of the Drawings
[0018] To more clearly illustrate the technical solutions in the specific embodiments of the present utility model, the following will briefly introduce the drawings required for use in the description of the specific embodiments. Obviously, the drawings in the following description are only some specific embodiments of the present utility model, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0019] Figure 1 It is a schematic diagram of the alignment markings on the wafer surface.
[0020] Figure 2 It is a schematic diagram of an embodiment where green light causes residues to appear at the edge of the alignment mark.
[0021] Figure 3 It is a schematic diagram of another embodiment where green light causes residues to appear at the edge of the alignment mark.
[0022] Figure 4 It is a schematic structural diagram of an embodiment of the semiconductor processing machine tool described in the present utility model.
[0023] Figure 5 For Figure 4 The cross-sectional view along the AA' direction in Specific embodiments
[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of them. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present utility model.
[0025] Please refer to Figures 1 to 3 wherein, Figure 1 is a schematic diagram of the alignment marks on the wafer surface, Figure 2 is a schematic diagram of an embodiment where green light causes residues to appear at the edge of the alignment mark, Figure 3 is a schematic diagram of another embodiment where green light causes residues to appear at the edge of the alignment mark. As Figures 1 to 3 shown, the green light used by Capture can cause damage 210 to the photoresist 21 at the edge of the alignment mark 11, thereby causing damage to the wafer 10 and affecting the product yield. To solve the above problems, the present utility model provides a semiconductor processing machine tool to avoid the exposure of the photoresist at the edge of the alignment mark to green light.
[0026] Please refer to Figures 4 to 5 wherein, Figure 4 is a schematic structural diagram of an embodiment of the semiconductor processing machine tool described in the present utility model; Figure 5 For Figure 4Cross-sectional view along the AA' direction. As Figures 4 to 5 shown, the semiconductor processing machine includes: at least one laser light source 41, at least one optical fiber 42, and a green light regulator 43. The laser light source 41 includes a green light source 411 for emitting green laser light. One end of the optical fiber 42 is connected to the laser light source 41. The green light regulator 43 is disposed on the optical fiber 420 connected to the green light source 411. The green light regulator 43 further includes a housing 431 and a plurality of light-transmitting sheets 432 of different sizes. The green light regulator 43 can attenuate the green laser light passing through the light-transmitting sheet 432, and the light intensity attenuation ratio of the light-transmitting sheet 432 decreases as the size of the light-transmitting sheet 432 increases.
[0027] The above technical solution adjusts the intensity of the green light emitted by the machine by providing a green light regulator with a light-transmitting sheet capable of attenuating green light, so that the green laser light is attenuated during the alignment of the semiconductor processing machine, thereby reducing the damage to the photoresist by the green laser light during lithography alignment, and further avoiding damage to the wafer, and improving the yield of the product to a certain extent.
[0028] In some embodiments, the light intensity attenuation ratio range of the green light regulator 43 is 10% - 50%. As described above, the green light regulator 43 has a plurality of light-transmitting sheets 432 of different sizes, and the light intensity attenuation ratio of the light-transmitting sheet 432 decreases as the size of the light-transmitting sheet 432 increases. That is, the light intensity attenuation ratio of the light-transmitting sheet 432 is determined by the size of the light-transmitting sheet 432. The smaller the size of the light-transmitting sheet 432, the greater its light intensity attenuation ratio; conversely, the larger the size of the light-transmitting sheet 432, the smaller its light intensity attenuation ratio. For different processes, the light-transmitting sheets 432 with different light intensity attenuation ratios can be selected to meet the process requirements.
[0029] In some embodiments, the green light regulator 43 further includes an incident light position 439 and an exit light position 438 which are oppositely arranged, and the light-transmitting sheet 432 is disposed at the incident light position 439 of the green light regulator 43. Both the incident light position 439 and the exit light position 438 are connected to the optical fiber 420 connected to the green light source 411 for adjusting the green light intensity in the optical fiber 420. In this embodiment, both the incident light position 439 and the exit light position 438 are located at the center of the cross-section of the green light regulator.
[0030] In some embodiments, the green light regulator 43 can adjust the light intensity attenuation ratio of the green light regulator 43 by adjusting light-transmitting sheets 432 of different sizes to the incident light position 439. Select the light-transmitting sheet 432 with an appropriate light intensity attenuation ratio, and manually adjust the light-transmitting sheet 432 to the incident light position 439 to adjust the light intensity attenuation ratio of the green light regulator 43. AsFigure 5 As shown, the light-transmitting sheet 432 faces the light-incident position 439 and is located at the center of the housing 431, so that the green laser emitted from the optical fiber 420 vertically enters the light-transmitting sheet 32.
[0031] In some embodiments, the area of the green light regulator 43 other than the light-transmitting sheet 432 is a light-blocking area 433. By setting the area other than the light-transmitting sheet 432 as the light-blocking area 433, the green light regulator 43 can adjust the light intensity of the green laser passing through the green light regulator 43 by controlling the size of the light-transmitting sheet 432, and further control the light intensity attenuation ratio of the green light regulator 43.
[0032] In some embodiments, the length of the optical fiber 42 is greater than 2 meters to meet the process requirements. In this embodiment, the length of the optical fiber 42 is 2.5 meters. In other embodiments, the length of the optical fiber 42 is 3 meters.
[0033] In some embodiments, the wavelength range of the green laser is 492 nanometers to 577 nanometers.
[0034] In some embodiments, the process machine is a polyimide photoresist lithography device. Since the exposure wavelength range of the polyimide photoresist is less than 550 nanometers, and the wavelength range of the green laser is 492 nanometers to 577 nanometers, if the green laser is not attenuated, the green laser will surely expose the polyimide photoresist, affecting the wafer quality and reducing the product yield.
[0035] In some embodiments, the laser light source 41 further includes a red light source 412 for emitting red laser light, wherein the wavelength range of the red laser light is 622 nanometers to 760 nanometers. In other embodiments, the laser light source 41 may further include a near-infrared (Near Infrared, NIR) light source (not shown) and a far-infrared (Far Infrared, FIR) light source (not shown); wherein, the near-infrared light source is used to provide near-infrared laser light, and the wavelength range of the near-infrared laser light is 780 nanometers to 1100 nanometers; the far-infrared light source is used to provide far-infrared laser light, and the wavelength range of the far-infrared laser light is 8 micrometers to 14 micrometers. The red light source 412, the near-infrared light source, and the far-infrared light source are respectively connected to different optical fibers 42, and the length of each section of the optical fiber 42 is equal. In this embodiment, the length of the optical fiber 42 is 2.5 meters. In other embodiments, the length of the optical fiber 42 is 3 meters.
[0036] In some embodiments, an optical alignment module 44 is further included and connected to the other end of the optical fiber 42. The optical alignment module 44 includes a plurality of optical structures, such as a 90° prism, an attenuation wheel, a beam splitter, an optical modulator, a projection lens, etc. It can be an optical alignment module of any device, which is not limited herein. The laser emitted by the optical fiber 42 is irradiated on the alignment mark of the wafer after being processed by the optical alignment module 44.
[0037] After installing the green light adjuster 43, the light intensity of the green laser is adjusted, so that the minimum value (Min NF Green) of the reciprocal of the light intensity of the green laser increases from 154325 to 1662198, and the maximum value (Max NF Green) of the reciprocal of the light intensity of the green laser increases from 490578 to 5293204, and the green light intensity becomes weaker. Among them, the reciprocal of the light intensity is the reciprocal of the light intensity, and its value is 1 / light intensity; the larger the reciprocal of the light intensity, the smaller the light intensity, and the smaller the reciprocal of the light intensity, the larger the light intensity, which reflects the magnitude of the light intensity. Usually, when the light intensity value is small and difficult to directly compare, by comparing the reciprocal of the light intensity, the change of the light intensity can be more intuitively reflected.
[0038] After installing the green light adjuster 43, 3 groups of alignment processes are trial-operated. It not only attenuates the green light intensity so that the polyimide photoresist is not exposed, but also does not affect the normal alignment process. There is no damage to the photoresist on the wafer, and the yield of each wafer can be increased by 5%.
[0039] It should be noted that the reference to "an embodiment", "embodiment", "exemplary embodiment", "some embodiments", etc. in the specification indicates that the described embodiments may include specific features, structures or characteristics, but each embodiment may not necessarily include the specific features, structures or characteristics. Moreover, such phrases do not necessarily refer to the same embodiment. In addition, when a specific feature, structure or characteristic is described in combination with an embodiment, whether or not it is explicitly described, implementing such a feature, structure or characteristic in combination with other embodiments is within the knowledge of those skilled in the relevant art.
[0040] Generally, terms can be understood at least in part from their usage in context. For example, as used herein, the term "one or more" depends at least in part on context and can be used to describe any feature, structure, or characteristic in a singular sense or can be used to describe a combination of features, structures, or characteristics in a plural sense. Similarly, terms such as "a", "an", or "the" can also be understood to express singular usage or plural usage, at least in part depending on context. Additionally, the term "based on" can be understood not necessarily to be intended to express a set of exclusive factors, but instead, can alternatively, also at least in part depending on context, allow for other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected / coupled" not only refers to a component being directly coupled to another component, but also refers to a component being indirectly coupled to another component through an intermediate component.
[0041] It should be noted that the terms "comprising" and "having" and their variations as used in the documents of the present utility model are intended to cover non-exclusive inclusion. The terms "first", "second", etc. are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence, unless the context clearly indicates otherwise. It should be understood that the data used in this way can be interchanged under appropriate circumstances. Additionally, in the case of no conflict, the embodiments in the present utility model and the features in the embodiments can be combined with each other. Furthermore, in the above description, the description of well-known components and technologies is omitted to avoid unnecessarily confusing the concepts of the present utility model. In each of the above embodiments, what each embodiment focuses on explaining is the difference from other embodiments. For the same / similar parts among the embodiments, reference can be made to each other.
[0042] The above is only the preferred embodiment of the present utility model. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present utility model, several improvements and refinements can be made, and these improvements and refinements should also be regarded as the protection scope of the present utility model.
Claims
1. A semiconductor processing machine, characterized in that, Comprising: At least one laser light source, the laser light source including a green light source for emitting green laser light; At least one optical fiber, one end of the optical fiber being connected to the laser light source; A green light regulator disposed on the optical fiber connected to the green light source, the green light regulator further including a housing and a plurality of light-transmitting sheets of different sizes, the green light regulator being capable of attenuating the green laser light passing through the light-transmitting sheet, and the light intensity attenuation ratio of the light-transmitting sheet decreasing as the size of the light-transmitting sheet increases.
2. The semiconductor processing machine according to claim 1, wherein The light intensity attenuation ratio range of the green light regulator is 10% to 50%.
3. The semiconductor processing machine tool according to claim 1, wherein, The green light regulator further includes an incident light position and an exit light position disposed opposite to each other, and the light-transmitting sheet is disposed at the incident light position of the green light regulator.
4. The semiconductor processing machine according to claim 3, wherein The green light regulator can adjust the light intensity attenuation ratio of the green light regulator by adjusting light-transmitting sheets of different sizes to the incident light position.
5. The semiconductor processing machine according to claim 1, wherein The area other than the light-transmitting sheet of the green light regulator is a non-light-transmitting area.
6. The semiconductor processing machine according to claim 1, wherein, The length of the optical fiber is greater than 2 meters.
7. The semiconductor processing machine according to claim 1, wherein The wavelength range of the green laser light is 492 nanometers to 577 nanometers.
8. The semiconductor processing machine tool according to claim 1, wherein, The laser light source further includes a red light source for emitting red laser light, wherein the wavelength range of the red laser light is 622 nanometers to 760 nanometers.
9. The semiconductor processing machine according to claim 1, wherein An optical alignment module is further included and is connected to the other end of the optical fiber.
10. The semiconductor processing machine according to claim 1, wherein, The process machine is a polyimide photoresist lithography apparatus.