Self-heating chip structure and integrated circuit
By integrating the temperature sensor and heating unit in the chip structure, using the interlaced heating layer and the resistive heating in the substrate, the problem of slow chip driving at low temperatures is solved, fast and efficient temperature adjustment is achieved, and the use range and reliability of the chip are improved.
Patent Information
- Application Number
- CN202422288643.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-18
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-09-18
AI Technical Summary
Under low temperature conditions, the chip drive is slow or unable to drive, and the existing external heating devices have problems such as low heat transfer efficiency, large power consumption and burden, which limits the use range and reliability of the chip.
在芯片结构中集成温度传感器和加热单元,通过加热层与基板交错设置,利用电阻加热原理在基板内部直接加热芯片,实现快速温度调节。
It improves heat transfer efficiency, improves chip heating efficiency, and enhances the practicality and reliability of the chip.
Smart Images
Figure CN223092869U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and in particular to a self-heating chip structure and an integrated circuit. Background Art
[0002] At low temperatures, the driving of the chip becomes extremely slow or even fails to drive, greatly affecting the applicable range of the chip, restricting the related applications of the chip, and also bringing reliability problems. Therefore, it is extremely important to promptly raise the chip temperature to the operating temperature.
[0003] In related technologies, the chip usually uses an external heating device for heating. This heating method not only has problems such as a long heat transfer path, low transfer efficiency, and high power consumption, but also the external heating device places a certain burden on the chip itself, restricting the use of the chip. Therefore, there are still technical problems to be solved in related technologies. Summary of the Utility Model
[0004] The purpose of this application is to solve at least to some extent one of the technical problems existing in the prior art.
[0005] To this end, an object of an embodiment of this application is to provide a self-heating chip structure and an integrated circuit. This solution can improve the heat transfer efficiency and thus improve the chip heating efficiency.
[0006] To achieve the above technical purpose, the technical solution adopted in the embodiment of this application includes: a self-heating chip structure, including: a target chip, a temperature sensor, and a heating unit; both the target chip and the temperature sensor are disposed on the same side surface of the heating unit; pins are disposed on the other side surface of the heating unit; the pins are used to connect to an external power supply; the heating unit includes at least one layer of heating layer and at least two layers of substrates, and one of the substrates is disposed between the heating layer and the target chip, and the other substrate is disposed between the heating layer and the pins.
[0007] In addition, according to a self-heating chip structure in the above embodiment of the present utility model, there may also be the following additional technical features:
[0008] Further, in the embodiment of this application, the heating unit includes n layers of the heating layer and n + 1 layers of the substrates; the heating layers and the substrates are arranged alternately; where n is an integer greater than or equal to 1.
[0009] Further, in the embodiment of this application, the substrate includes a conductive structure; the conductive structure is used to connect any two layers of the heating layers.
[0010] Further, in the embodiment of the present application, the number of the target chips is one, and the center of the projection of the heating unit parallel to the placement direction of the self-heating chip structure coincides with the center of the target chip.
[0011] Further, in the embodiment of the present application, the heating layer includes heating wires; the heating wires are arranged below the target chip along the direction parallel to the placement direction of the self-heating chip structure; the projection of the heating wires along the direction parallel to the placement direction of the self-heating chip structure completely coincides with or partially coincides with the target chip.
[0012] Further, in the embodiment of the present application, the material of the heating wires includes one of copper, aluminum or nickel-chromium alloy.
[0013] Further, in the embodiment of the present application, the shape of the heating wires includes a serpentine shape or a spiral shape.
[0014] Further, in the embodiment of the present application, the thickness of the heating layer is the same as the thickness of the substrate.
[0015] Further, in the embodiment of the present application, the target chip is electrically connected to the temperature sensor.
[0016] On the other hand, the embodiment of the present application further provides an integrated circuit, including a self-heating chip structure as described in any one of the foregoing.
[0017] The advantages and beneficial effects of the present application will be partially given in the following description, partially will become obvious from the following description, or will be understood through the practice of the present application:
[0018] In the present application, the target chip and the temperature sensor can be arranged on the same side surface of the heating unit, and at the same time, pins connected to the power supply are arranged on the other side surface to supply power to the chip by the power supply. The structure of the present application enables the sensor to detect the temperature of the chip in real time during the operation of the chip and heat the chip in a timely and rapid manner through the heating unit. The present application can improve the heat transfer efficiency, improve the heating efficiency, and improve the practicability of the chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a schematic structural diagram of a self-heating chip structure in a specific embodiment of the present utility model;
[0020] Figure 2 It is a schematic structural diagram of a self-heating chip structure in another specific embodiment of the present utility model;
[0021] Figure 3 It is a schematic structural diagram of a self-heating chip structure in another specific embodiment of the present utility model;
[0022] Figure 4 Schematic diagram of the heating process of the self-heating chip structure in a specific embodiment of the present invention. Specific implementation mode
[0023] The following will describe in detail the principles and processes of the self-heating chip structure and the integrated circuit in the embodiments of the present invention with reference to the accompanying drawings.
[0024] Refer to Figure 1 A self-heating chip structure of the present application may include a target chip 101, a temperature sensor 102, and a heating unit 103.
[0025] Both the target chip 101 and the temperature sensor 102 are disposed on the same side surface of the heating unit 103. A lead 104 is disposed on the other side surface of the heating unit 103. The lead 104 is used to connect to an external power supply. The heating unit 103 includes at least one heating layer 112 and at least two substrates 111. One substrate 111 is disposed between the heating layer 112 and the target chip 101, and the other substrate 111 is disposed between the heating layer 112 and the lead 104. It can be understood that the temperature sensor 102 and the heating unit 103 may be integrated on a chip structure and are electrically connected to each other through a wire or a conductor, or may be two separate devices connected by a metal wire.
[0026] Further, in some feasible embodiments of the present application, the heating unit includes n heating layers and n + 1 substrates. The heating layers and the substrates are arranged alternately. Wherein, n is an integer greater than or equal to 1.
[0027] Further, in some feasible embodiments of the present application, the substrate includes a conductive structure. The conductive structure is used to connect any two heating layers.
[0028] Further, in some feasible embodiments of the present application, the number of target chips is one, and the center of the projection of the heating unit in the direction parallel to the placement direction of the self-heating chip structure coincides with the center of the target chip.
[0029] Further, in some feasible embodiments of the present application, the heating layer includes heating wires. The heating wires are disposed below the target chip along the direction parallel to the placement direction of the self-heating chip structure. The projection of the heating wires in the direction parallel to the placement direction of the self-heating chip structure completely coincides with or partially coincides with the target chip.
[0030] Further, in some feasible embodiments of the present application, the material of the heating wires includes one of copper, aluminum, or nickel-chromium alloy.
[0031] Further, in some feasible embodiments of the present application, the shape of the heating wires includes a serpentine shape or a spiral shape.
[0032] Further, in some feasible embodiments of the present application, the thickness of the heating layer is the same as the thickness of the substrate.
[0033] Further, in some feasible embodiments of the present application, the target chip is electrically connected to the temperature sensor.
[0034] The following describes the specific calculation principle of the present application with reference to the accompanying drawings:
[0035] Refer to Figure 2 、 Figure 3 and Figure 4 , the substrate structure used in the self-heating chip structure of this embodiment is applicable to various packaging forms with substrate structures.
[0036] The heating layer of the heating unit is inside the substrate under the chip. The size of the heating layer only needs to match the design size of the substrate. There is no specific positional relationship between the chip and the wiring position of the heating layer. The substrate size determines the size of the heating layer and has little influence on the chip size.
[0037] The production of the heating layer is similar to the production methods of each layer of the chip packaging substrate. Circuit interconnection lines are prepared for each layer of the substrate layer. Heating wires are embedded in the heating layer and connected to the heating circuit in the substrate layer design. The material of the heating layer is the same as that of the substrate layer.
[0038] Obtain material information of materials directly involved in heat conduction such as the substrate (number of substrate layers, substrate thickness, substrate size, substrate material, and corresponding thermal conductivity), chip (size, thickness, heat capacity, thermal conductivity, and heat dissipation power), and bump (size, height, material composition, and corresponding thermal conductivity) in the existing chip packaging design. Based on the above data, a thermal analysis simulation model can be established, and then the heating layer design can be planned.
[0039] The heating layer that realizes the heating function is a metal wire with resistance. Using the principle of resistance heating, when an electric current passes through the resistor body, the resistance wire first generates heat, and then the heat generated by the resistance wire is directly used to heat the substrate by means of heat conduction and other methods to realize the heating of the wafer. The resistance wire material includes but is not limited to one of copper wire, aluminum wire, or nickel-chromium alloy wire. The heating layer design is not limited to heating wires and can also be infrared heating. The parameters of the heating wire can be optimized in this embodiment. The parameters of the heating wire mainly include the wiring position, line width, line spacing, and line length. The wiring position refers to the relative position between the heating wire and the chip to be heated and packaged. The heating wire can be placed directly below the projection area of the chip or at the four corners. In order to improve the heating efficiency, the heating path corresponding to the projection area position is the shortest and the efficiency will be faster accordingly, so it will be given priority. In view of the possible co-packaging of multiple chips inside the chip package, according to the chip positions, the position of the wiring layer needs to be adjusted accordingly, and the wiring area needs to be reasonably allocated.
[0040] The line width refers to the width of the heating wire, the line spacing refers to the distance between the heating wires, and the line length refers to the length of the heating wire. Through the simulation analysis of each parameter, the simulation analysis simultaneously considers the heat dissipation of the packaged chip to ensure that under the combined action of the heating power and the chip heat dissipation, the packaged chip can be heated to the normal operating temperature with the minimum heating power. Different packaged chips generally correspond to different optimal wiring parameters.
[0041] The layout shape of the heating layer can adopt shapes such as serpentine or spiral. The heating layer can be selected for single-layer or multi-layer layout within the substrate. The thickness of the heating layer can first select a suitable size through simulation analysis. Being too thick will affect the heating efficiency and the overall package structure design scheme.
[0042] The temperature sensor can be built into the wafer or an external separate small component. The component is interconnected through the substrate and the inside of the wafer. After the chip is powered on, the temperature sensor can quickly collect the internal environment temperature of the chip, and then the control circuit determines whether to start or interrupt the heating circuit.
[0043] In addition, in this embodiment, the wiring position of the heating layer resistance wire and the power parameters related to the resistance wire heating can be determined through simulation analysis according to the existing substrate design. The heating circuit connection and the temperature sensor are finally connected to the solder balls at the bottom of the substrate to form a complete circuit.
[0044] When the chip is powered on, when the internal temperature sensor of the chip detects that the temperature is lower than the set wafer startup temperature, the heating circuit will start. The heating layer quickly generates heat energy inside the substrate through heat conduction, and is transferred to the wafer through each layer of the substrate and the bumps, achieving the fastest speed to reach the startup temperature required by the wafer. After reaching the set temperature of the temperature sensor, the heating circuit will stop heating, reducing the chip and substrate losses, thereby playing a role in protecting the chip.
[0045] In addition, an integrated circuit is also provided in the embodiments of the present application. The integrated circuit may include one or more self-heating chip structures of any of the previous embodiments.
[0046] It should be noted that the content in the above self-heating chip structure embodiments is applicable to the integrated circuit embodiments of the present application. The functions specifically implemented by the integrated circuit embodiments of the present application are the same as those of the above self-heating chip structure embodiments, and the beneficial effects achieved are also the same as those of the above self-heating chip structure embodiments.
[0047] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the term "switch" should be understood in a broad sense. For example, it can be a transformation or a conversion. For those of ordinary skill in the art, the specific meaning of the above terms in the present invention can be understood according to specific circumstances.
[0048] In the description of this specification, the description of reference terms means that the specific structures or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Moreover, the specific features, structures or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0049] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.
[0050] The above is a specific description of the preferred embodiments of this application, but this application is not limited to the embodiments. Those skilled in the art can also make various equivalent deformations or substitutions without departing from the spirit of this application, and these equivalent deformations or substitutions are all included within the scope defined by the claims of this application.
Claims
1. A self-heating chip structure, characterized in that, Comprising: A target chip, a temperature sensor, and a heating unit; Both the target chip and the temperature sensor are disposed on the same side surface of the heating unit; pins are disposed on the other side surface of the heating unit; the pins are used for connecting to an external power supply; the heating unit includes at least one heating layer and at least two substrates, wherein one substrate is disposed between the heating layer and the target chip, and the other substrate is disposed between the heating layer and the pins.
2. The self-heating chip structure according to claim 1, wherein, The heating unit includes n heating layers and n + 1 substrates; the heating layers and the substrates are arranged alternately; wherein, n is an integer greater than or equal to 1.
3. The self-heating chip structure according to claim 2, wherein The substrate includes a conductive structure; the conductive structure is used for connecting any two heating layers.
4. The self-heating chip structure according to claim 1, characterized in that The heating layer includes heating wires; the heating wires are disposed below the target chip along a direction parallel to the placement direction of the self-heating chip structure; the projection of the heating wires along the direction parallel to the placement direction of the self-heating chip structure completely coincides with or partially coincides with the target chip.
5. The self-heating chip structure according to claim 4, wherein, The material of the heating wires includes one of copper, aluminum, or nickel-chromium alloy.
6. The self-heating chip structure according to claim 4, wherein The shape of the heating wires includes a serpentine shape or a spiral shape.
7. The self-heating chip structure according to claim 1, wherein, The target chip is electrically connected to the temperature sensor.
8. An integrated circuit, characterized in that, Comprising the self-heating chip structure according to any one of claims 1-7.