Back contact cell, cell assembly and photovoltaic system

Abstract

The utility model is suitable for the technical field of solar cells, and provides a back contact cell, a cell assembly and a photovoltaic system, in the back contact cell, in a first serial connection area, a first conductive grid line has a first discontinuous structure, and the first discontinuous structure comprises a plurality of first grid line segments arranged at intervals along a second direction. The first conductive connecting piece covers the first discontinuous structure and is conductively connected with the first grid line segment. Thus, the first conductive grid lines are arranged to be of the discontinuous structures in the first series connection area, then the first conductive connecting pieces arranged on the first discontinuous structures in a covering mode are used for achieving welding of the first conductive grid lines and the welding pieces, and compared with a traditional mode that fine grids are thickened and widened at the welding position, the welding performance can be guaranteed under the condition that the welding performance is guaranteed, and the welding efficiency is improved. And the usage amount of slurry in the process of preparing the first conductive grid line is reduced, so that the cost is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular, to a back contact cell, a battery module, and a photovoltaic system. Background Art

[0002] In the related art, in a back contact solar cell, in order to achieve stable welding between a solder ribbon and a fine grid, the position where the fine grid is welded to the solder ribbon is usually widened. However, in such a case, a relatively large amount of silver paste is used for the fine grid, resulting in a high cost. Summary of the Utility Model

[0003] The present application provides a back contact cell, a battery module, and a photovoltaic system, aiming to solve the technical problem of high silver paste usage amount in the back contact cell in the prior art, resulting in a high cost.

[0004] The present application is implemented as follows. The back contact cell of the embodiment of the present application includes:

[0005] A silicon substrate having opposite back and front surfaces, the back surface having a plurality of first series connection regions and a plurality of second series connection regions for setting welding members;

[0006] A plurality of first doping layers and a plurality of second doping layers provided on the back surface, the first doping layers and the second doping layers having opposite polarities, the plurality of first doping layers and the plurality of second doping layers being alternately arranged along a first direction and extending along a second direction, the second direction intersecting the first direction;

[0007] A first conductive grid line provided on the first doping layer and a second conductive grid line provided on the second doping layer, the first conductive grid line being electrically connected to the first doping layer, the second conductive grid line being electrically connected to the second doping layer, the first conductive grid line and the second conductive grid line both extending along the second direction, the first series connection regions and the second series connection regions intersecting the first conductive grid line and the second conductive grid line; in the first series connection region, at least part of the first conductive grid line has a first discontinuous structure, the first discontinuous structure including a plurality of first grid segments arranged at intervals; and

[0008] A plurality of first conductive connection members, the first conductive connection members being provided to cover the first discontinuous structure and being electrically connected to the first grid segments, the first conductive connection members being insulated from the second conductive grid line, the first conductive connection members being used for welding with the welding members provided in the first series connection regions.

[0009] Furthermore, the first conductive connection members are also electrically connected to the portions of the first conductive grid line on both sides of the first discontinuous structure.

[0010] Furthermore, the glass frit content in the first conductive connection member is greater than that in the first conductive grid line; and / or

[0011] The material of the first conductive connection member is different from that of the first conductive grid line, and the silver content in the first conductive connection member is less than that in the first conductive grid line.

[0012] Furthermore, the first conductive connection member is partially embedded between two adjacent first grid line segments.

[0013] Furthermore, in the second direction, the overall length of the first discontinuous structure is 0.05 mm - 5 mm.

[0014] Furthermore, the length of a single first grid line segment in the second direction is greater than 0.02 mm.

[0015] Furthermore, in the first discontinuous structure, the spacing between two adjacent first grid line segments in the second direction is less than or equal to 2 mm.

[0016] Furthermore, the first conductive connection member is a hollow structure.

[0017] Furthermore, the first conductive connection member is a discontinuous structure. The first conductive connection member includes a plurality of first conductive connection segments arranged at intervals. Each first conductive connection segment completely covers at least one first grid line segment, and the area of the first conductive connection segment is greater than the area of the first grid line segment covered by the first conductive connection segment.

[0018] Furthermore, each first conductive connection segment covers one first grid line segment, and the area of the first conductive connection segment is more than twice the area of the first grid line segment covered by the first conductive connection segment.

[0019] Furthermore, a plurality of the first grid line segments are arranged at intervals in a row in the second direction; or

[0020] A plurality of the first grid line segments are arranged in multiple rows in the first direction, and each row includes at least one first grid line segment.

[0021] Furthermore, in the case where a plurality of the first grid line segments are arranged in multiple rows in the first direction, the pattern formed by the plurality of first grid line segments is a rectangle, or a trapezoid, or a circle or an ellipse.

[0022] Furthermore, in the first series connection area, a first insulating member is provided on the second conductive grid line.

[0023] Further, among all the first discontinuous structures in the same first connection area, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the first discontinuous structure in the second direction gradually decreases; and / or

[0024] Among all the first conductive connectors in the same first connection area, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the first conductive connector in the second direction gradually decreases.

[0025] Further, in the same first connection area, the centers of all the first conductive connectors are located on the same straight line in the first direction; or, in the same first connection area, the connection line formed by the centers of all the first conductive connectors is a broken line or a wavy line.

[0026] Further, the shape of the first gate segment is dot-shaped or line-shaped.

[0027] Further, among all the first gate segments of the first discontinuous structure, in the second direction, along the direction from both ends of the first discontinuous structure towards the middle position of the first discontinuous structure, the area of the first gate segment gradually decreases.

[0028] Further, in the second connection area, in the second connection area, at least part of the second conductive gate line has a second discontinuous structure, and the second discontinuous structure includes a plurality of second gate segments arranged at intervals;

[0029] The back contact battery further includes a plurality of second conductive connectors, the second conductive connectors are covered on the second discontinuous structure and are electrically connected to the second gate segments, the second conductive connectors are insulated from the first conductive gate line, and the second conductive connectors are used for welding with the weldments arranged in the second connection area.

[0030] Further, the second conductive connectors are also electrically connected to the parts of the second conductive gate line on both sides of the second discontinuous structure.

[0031] Further, the glass frit content in the second conductive connectors is greater than the glass frit content in the second conductive gate line; and / or

[0032] The material of the second conductive connectors is different from the material of the second conductive gate line, and the silver content in the second conductive connectors is less than the silver content in the second conductive gate line.

[0033] Further, the second conductive connectors are partially embedded between two adjacent second gate segments.

[0034] Further, in the second direction, the overall length of the second discontinuous structure is 0.05 mm - 5 mm.

[0035] Further, the length of a single second grid segment in the second direction is greater than 0.02 mm.

[0036] Further, in the second discontinuous structure, the distance between two adjacent second grid segments in the second direction is less than 2 mm.

[0037] Further, the second conductive connecting member is a hollow structure.

[0038] Further, the second conductive connecting member is a discontinuous structure. The second conductive connecting member includes a plurality of second conductive connecting segments. Each second conductive connecting segment completely covers at least one second grid segment, and the area of the second conductive connecting segment is greater than the area of the second grid segment covered by the second conductive connecting segment.

[0039] Further, each second conductive connecting segment covers one second grid segment, and the area of the second conductive connecting segment is greater than twice the area of the second grid segment covered by the second conductive connecting segment.

[0040] Further, a plurality of the second grid segments are arranged at intervals in a row in the second direction; or

[0041] A plurality of the second grid segments are arranged in multiple rows in the first direction, and each row includes at least one second grid segment.

[0042] Further, in the case where a plurality of the second grid segments are arranged in multiple rows in the first direction, the figure formed by the arrangement of the plurality of second grid segments is a rectangle, or a trapezoid, or a circle or an ellipse.

[0043] Further, in the second series connection region, a second insulating member is provided on the first conductive grid line.

[0044] Further, in all the second discontinuous structures in the same second series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the second discontinuous structure in the second direction gradually decreases; and / or

[0045] In all the second conductive connecting members in the same second series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the second conductive connecting member in the second direction gradually decreases.

[0046] Further, in the same second connection area, the centers of all the second conductive connectors are located on the same straight line in the first direction; or, in the same second connection area, the connection line formed by the centers of all the second conductive connectors is a broken line or a wavy line.

[0047] Further, the shape of the second gate segment is dot-shaped or line-shaped.

[0048] Further, among all the second gate segments of the second discontinuous structure, in the second direction, along the direction from both ends of the second discontinuous structure towards the middle position of the second discontinuous structure, the area of the second gate segment gradually becomes smaller.

[0049] Further, the doping layers closest to the two edges of the silicon substrate in the first direction are both the first doping layers, and the doping type of the first doping layer is opposite to that of the silicon substrate.

[0050] The present application further provides a battery assembly, and the battery assembly includes a plurality of battery strings as described in any one of the above.

[0051] The present application further provides a photovoltaic system, and the photovoltaic system includes the above battery assembly.

[0052] In the back contact battery, battery assembly, and photovoltaic system according to the embodiments of the present application, in the first connection area, the first conductive grid line has a first discontinuous structure, and the first discontinuous structure includes a plurality of first gate segments arranged at intervals in the second direction. The first conductive connector is covered on the first discontinuous structure and is electrically connected to the first gate segment. In this way, by setting the first conductive grid line into a discontinuous structure in the first connection area, and then realizing the welding with the welding part by covering the first conductive connector on the first discontinuous structure, compared with the traditional method of thickening and widening the fine grid at the welding position, the amount of paste used in the process of preparing the first conductive grid line can be reduced while ensuring the welding performance, thereby reducing the cost.

[0053] The additional aspects and advantages of the present application will be partially given in the following description, partially will become obvious from the following description, or will be understood through the practice of the present application. Description of the Drawings

[0054] Figure 1 is a module schematic diagram of the photovoltaic system provided by the embodiment of the present application;

[0055] Figure 2 is a module schematic diagram of the battery assembly provided by the embodiment of the present application;

[0056] Figure 3It is a schematic plan view of the back surface of the back-contact battery provided by the embodiment of the present application;

[0057] Figure 4 It is Figure 3 a schematic cross-sectional view of the back-contact battery along line IV-IV provided in

[0058] Figure 5 It is Figure 3 a schematic enlarged view of the back-contact battery at V provided in

[0059] Figure 6 It is a schematic structural view of the first conductive grid line of the back-contact battery provided by the embodiment of the present application;

[0060] Figure 7 It is Figure 3 a schematic cross-sectional view of the back-contact battery along line VII-VII provided in

[0061] Figure 8 It is Figure 3 a schematic enlarged view of the back-contact battery at VIII provided in

[0062] Figure 9 It is a schematic structural view of the second conductive grid line of the back-contact battery provided by the embodiment of the present application;

[0063] Figure 10 It is Figure 3 a schematic cross-sectional view of the back-contact battery along line X-X provided in

[0064] Figure 11 It is Figure 3 a schematic enlarged view of the back-contact battery along line XI-XI provided in

[0065] Figure 12 It is a schematic arrangement view of the first discontinuous structure, the second discontinuous structure, the first conductive connecting member and the second conductive connecting member provided by the embodiment of the present application;

[0066] Figure 13 It is another arrangement schematic view of the first conductive connecting member and the second conductive connecting member provided by the embodiment of the present application;

[0067] Figure 14 It is a schematic structural view of the first conductive grid line and the second conductive grid line provided by the embodiment of the present application.

[0068] Main element symbol description:

[0069] Photovoltaic system 1000, battery module 200, back-contact battery 100, silicon substrate 10, back surface 11, front surface 12, first doping layer 20, second doping layer 30, first conductive grid line 40, first discontinuous structure 41, first grid line segment 411, second conductive grid line 50, second discontinuous structure 51, second grid line segment 511, first conductive connecting member 60, first insulating member 70, second conductive connecting member 80, second insulating member 90, back surface passivation film layer 110. Detailed implementation manners

[0070] In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present application and cannot be construed as a limitation to the present application. In addition, it should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0071] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "top", "bottom", "lateral", "longitudinal", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus cannot be construed as a limitation to the present application.

[0072] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless otherwise specifically defined.

[0073] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection or an integral connection; it may be a mechanical connection, an electrical connection or can communicate with each other; it may be directly connected or indirectly connected through an intermediate medium, and may be the internal connection of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0074] In this application, unless otherwise clearly specified and defined, the first feature being "on" or "under" the second feature may include direct contact between the first and second features, or may include indirect contact between the first and second features through additional features therebetween. Moreover, the first feature being "above", "over" and "on top of" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "under", "beneath" and "underneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the horizontal height of the first feature is lower than that of the second feature.

[0075] The following disclosure provides many different embodiments or examples for implementing different structures of this application. To simplify the disclosure of this application, components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit this application. In addition, this application may repeat reference numerals and / or reference letters in different examples. Such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between various embodiments and / or settings discussed. In addition, this application provides examples of various specific processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use scenarios of other materials.

[0076] Please refer to Figures 1 - 2 , the photovoltaic system 1000 in the embodiment of this application may include the battery assembly 200 in the embodiment of this application, and the battery assembly 200 in the embodiment of this application may include several back-contact batteries 100 in the embodiment of this application. In the battery assembly 200, each back-contact battery 100 may be connected in series through welding pieces (such as solder tapes) to form several battery strings, and each battery string in the battery assembly 200 may be connected in series, in parallel, or in a series-parallel combination to achieve the current convergence output. For example, the connection between each battery string may be achieved through busbars.

[0077] Please refer to Figures 3 - 6 , the back-contact battery 100 in the embodiment of this application may include a silicon substrate 10, several first doping layers 20, several second doping layers 30, several first conductive grid lines 40, several second conductive grid lines 50, and several first conductive connectors 60.

[0078] The silicon substrate 10 has opposite front 12 and back 11 surfaces, and the back 11 surface has several first series connection regions 111 and several second series connection regions 112 for setting welding pieces.

[0079] It should be noted that the first connection area 111 and the second connection area 112 are respectively the areas covered by the welded parts (such as welding tapes) when welding the welded parts. Exemplarily, in some examples, the first connection area 111 may be the area covered by the positive welding tape, and the second connection area 112 may be the area covered by the negative welding tape; in other examples, the first connection area 111 may also be the area covered by the negative welding tape, and the second connection area 112 may be the area covered by the positive welding tape.

[0080] The first doping layer 20 and the second doping layer 30 are both disposed on the back surface 11 of the silicon substrate. The polarities of the first doping layer 20 and the second doping layer 30 are opposite. A plurality of first doping layers 20 and a plurality of second doping layers 30 are alternately arranged along the first direction and both extend along the second direction, and the second direction intersects the first direction.

[0081] The first conductive gate line 40 is disposed on the first doping layer 20, and the second conductive gate line 50 is disposed on the second doping layer 30. The first conductive gate line 40 is electrically connected to the first doping layer 20, and the second conductive gate line 50 is electrically connected to the second doping layer 30. The first conductive gate line 40 and the second conductive gate line 50 both extend along the second direction. The first connection area 111 and the second connection area 112 intersect the first conductive gate line 40 and the second conductive gate line 50;

[0082] Specifically, as Figure 3 shown, the first direction and the second direction may be the longitudinal direction and the transverse direction of the back contact battery 100 respectively, and the two are perpendicular to each other. Of course, in other embodiments, the first direction and the second direction may also be other directions. For example, the two may be the diagonal directions of the silicon substrate 10 respectively, and specific limitations are not made here. It is not difficult to understand that in the back contact battery 100, the first connection area 111 and the second connection area 112 are alternately arranged along the second direction.

[0083] As Figure 3 and Figures 5 - 7 shown, in the embodiment of the present application, within the first connection area 111, at least part of the first conductive gate line 40 has a first discontinuous structure 41. The first discontinuous structure 41 includes a plurality of first gate line segments 411 arranged at intervals along the second direction. The first conductive connection member 60 is disposed on the first discontinuous structure 41 and is electrically connected to the first gate line segments 411. The first conductive connection member 60 is insulated from the second conductive gate line 50. The first conductive connection member 60 is used to weld with the welded part disposed in the first connection area 111.

[0084] In the back-contact battery 100, the battery assembly 200, and the photovoltaic system 1000 according to the embodiments of the present application, in the first series connection region 111, the first conductive grid line 40 has a first discontinuous structure 41, and the first discontinuous structure 41 includes a plurality of first grid line segments 411 arranged at intervals along the second direction. The first conductive connecting member 60 is disposed to cover the first discontinuous structure 41 and is electrically connected to the first grid line segments 411. Thus, by arranging the first conductive grid line 40 in a discontinuous structure in the first series connection region 111, and then realizing welding with the welding member by covering the first conductive connecting member 60 disposed on the first discontinuous structure 41, compared with the conventional method of thickening and widening the fine grid at the welding position, the amount of paste used in the process of preparing the first conductive grid line 40 can be reduced while ensuring the welding performance, thereby reducing the cost.

[0085] Specifically, in the embodiments of the present application, it is possible that all the first conductive grid lines 40 have the first discontinuous structure 41 in the first series connection region 111. In such a case, the back-contact battery 100 can be a main-grid-free back-contact battery. Of course, in some embodiments, not all the first conductive grid lines 40 have the first discontinuous structure 41. In such a case, a main grid segment connected to the first conductive grid line 40 can be provided between two adjacent first conductive connecting members 60, and specific details are not limited herein.

[0086] In the present application, the polarities of the first doping layer 20 and the second doping layer 30 are opposite, one of which is a P-type doping layer and the other is an N-type doping layer. The first conductive grid line 40 and the second conductive grid line 50 are used for current collection, and their polarities are opposite. At the same time, the polarities of the welding members disposed in the first series connection region 111 and the welding members disposed in the second series connection region 112 are also opposite, one of which is a positive electrode welding member and the other is a negative electrode welding member.

[0087] It is not difficult to understand that, as Figure 4 and Figure 7 shown, in the back-contact battery 100, the back surface 11 of the silicon substrate 10 can be covered with a back surface passivation film layer 110, and the back surface passivation film layer 110 covers at least the first doping layer 20 and the second doping layer 30, and preferably covers the entire back surface 11. As Figure 7 shown, the first conductive grid line 40 penetrates through the back surface passivation film layer 110 to form an electrical connection with the first doping layer 20, and the second conductive grid line 50 penetrates through the back surface passivation film layer 110 to form an electrical connection with the second doping layer 30.

[0088] In some embodiments, the first conductive connecting member 60 may not penetrate through the back surface passivation film layer 110, and it may be entirely located above the back surface passivation film layer 110 or partially embedded in the back surface passivation film layer 110.

[0089] In some embodiments, the first conductive connection member 60 may be partially embedded between two adjacent first gate segments 411. The portion embedded between the first fine gate segments 411 may or may not penetrate the back passivation film layer 110, and specific details are not limited herein.

[0090] In addition, as Figure 4 and Figure 7 shown, in the back-contact battery 100, a tunneling layer 120 is provided between the first doping layer 20 and the second doping layer 30 and the silicon substrate 10.

[0091] In addition, as Figure 3 shown, in the embodiments of the present application, each first conductive gate line 40 may have a first discontinuous structure 41 and a first conductive connection member 60 at the first series connection region 111. At the same time, the same first conductive gate line 40 also has a first discontinuous structure 41 and a first conductive connection member 60 at the first series connection regions 111 at different positions. That is to say, in the second direction, each first conductive gate line 40 may have the same number of first discontinuous structures 41 corresponding to the first series connection regions 111.

[0092] It can be understood that in the present application, the width of the first conductive connection member 60 (i.e., the length in the first direction) may be greater than the width of the first conductive gate line 40 to facilitate welding with the welding member, and the width of the first conductive connection member 60 can reach the width of the thickened part of the fine grid in the traditional technical solution. Thus, it is not difficult to understand that in the traditional technical solution, the position of the fine grid for welding is thickened and widened, and in such a case, a large amount of silver paste is used at this position. In the present application, when preparing the first conductive gate line 40, there is no need to perform thickening and widening treatment, and a discontinuous structure is formed at the first series connection region 111, and then by covering the first conductive connection member 60 for welding, the welding performance can be ensured while reducing the use of paste.

[0093] In some embodiments, the first conductive connection member 60 is also electrically connected to the portions of the first conductive gate line 40 on both sides of the first discontinuous structure 41.

[0094] In this way, the first discontinuous structure 41 of the first conductive gate line 40 and the other portions on both sides of the first discontinuous structure 41 can be directly connected into a whole through the first conductive connection member 60. When setting the welding member, only by welding the welding member to the first conductive connection member 60 can the overall current collection of the first conductive gate line 40 be achieved.

[0095] Specifically, in such an embodiment, the length of the first conductive connection member 60 in the second direction may be greater than the length of the first discontinuous structure 41, so as to connect the first discontinuous structure 41 and the remaining portions of the first conductive gate line 40 together.

[0096] Of course, it can be understood that in some embodiments, the first conductive connection member 60 may also be only electrically connected to the first gate line segment 411 in the first discontinuous structure 41, and the current collection of other parts can be achieved by overlapping the welding member on the parts on both sides of the first discontinuous structure 41 when welding the welding member.

[0097] In some embodiments, the doped layers closest to the two edges of the silicon substrate 10 (i.e., the upper edge and the lower edge in the figure) in the first direction are both the first doped layer 20, and the doping type of the first doped layer 20 is opposite to that of the silicon substrate 10.

[0098] Thus, the first doped layer 20 serves as the emitter of the back-contact battery 100. Through such a design, the area of the emitter in the back-contact battery 100 can be increased, thereby improving the efficiency of the back-contact battery 100.

[0099] Specifically, in such an embodiment, the silicon substrate 10 can be a P-type silicon wafer or an N-type silicon wafer, that is, the doping type of the silicon substrate 10 can be P-type doping or N-type doping. Among them, when the doping type of the silicon substrate 10 is P-type doping, the doping type of the first doped layer 20 is N-type doping, and the doping type of the second doped layer 30 is P-type doping.

[0100] When the doping type of the silicon substrate 10 is N-type doping, the doping type of the first doped layer 20 is P-type doping, and the doping type of the second doped layer 30 is N-type doping.

[0101] That is to say, regardless of the doping type of the silicon substrate 10, the doped layers located at the upper and lower edges of the silicon substrate 10 are both the emitters of the back-contact battery 100.

[0102] In the embodiments of the present application, the shape of the first gate line segment 411 can be dot-shaped or line-shaped, and specific limitations are not made here.

[0103] In some embodiments, the first conductive gate line 40 can be made of a burn-through type paste, and the first conductive connection member 60 is made of a non-burn-through type paste, that is, the glass frit content in the first conductive connection member 60 is greater than that in the first conductive gate line 40. Thus, during the preparation process, it can be ensured that the first conductive connection member 60 does not completely burn through the back passivation film layer 110, and the usage amount of the paste can be reduced.

[0104] Specifically, in such an embodiment, the first conductive gate line 40 can be a metal gate line such as a silver gate line, an aluminum gate line, a copper gate line, or a silver-coated copper gate line, and the first conductive connection member 60 can be a structure such as a silver layer, a copper layer, or silver-coated copper, and specific limitations are not made here.

[0105] In some embodiments, the material of the first conductive connection member 60 is different from that of the first conductive gate line 40. For example, the first conductive gate line 40 may be a silver gate line, and the first conductive connection member 60 may be a silver-coated copper gate line, a copper gate line, etc. In such a case, the silver content in the first conductive connection member 60 is less than the silver content in the first conductive gate line 40. In this way, the use of silver paste can be reduced and the cost can be lowered.

[0106] Please refer to Figure 6 , in some embodiments, in the second direction, the overall length L1 of the first discontinuous structure 41 is 0.05 mm - 5 mm.

[0107] In this way, it is possible to avoid an excessive increase in process difficulty due to the overly small overall length of the first discontinuous structure 41, and it is also possible to avoid an overly large non-metallized area due to the overly large overall length of the first discontinuous structure 41, which may affect the efficiency.

[0108] It should be noted that, as Figure 6 shown, in the present application, the overall length of the first discontinuous structure 41 refers to the distance between two end points on both sides of the first discontinuous structure 41 in the first conductive gate line 40, that is, Figure 6 the distance between two end points of the first conductive gate line 40 shown in

[0109] in the first series connection area 111 (i.e., L1 in the figure). Specifically, in such an embodiment, in the second direction, the overall length of the first discontinuous structure 41 can be, for example, 0.05 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, or any value between 0.05 mm - 5 mm.

[0110] In some embodiments, the length L2 of a single first gate segment 411 in the second direction is greater than 0.02 mm.

[0111] In this way, it is possible to avoid a too small length of a single first gate segment 411, which may lead to a greater process difficulty and reduce the manufacturing cost.

[0112] It can be understood that in such an embodiment, regardless of the length of the first gate segment 411, within the first discontinuous structure 41, the sum of the lengths of all the first gate segments 411 is less than the total length of the first discontinuous structure 41.

[0113] In some embodiments, in the first discontinuous structure 41, the spacing L3 between two adjacent first gate segments 411 in the second direction is less than or equal to 2 mm.

[0114] In this way, it is possible to avoid the situation where the length of the metal-free area between two adjacent first gate segments 411 is too small, which may lead to great difficulty in process control, and it is also possible to avoid the situation where the length of the metal-free area between two adjacent first gate segments 411 is too large, which may lead to excessive efficiency loss.

[0115] Specifically, in such an embodiment, the spacing L3 between two adjacent first gate segments 411 in the second direction may be, for example, 0.05 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2 mm, or any value between 0 - 2 mm. Specifically, there is no limitation here.

[0116] As Figure 6 shown, in some embodiments, a plurality of first gate segments 411 are arranged at intervals in a row in the second direction.

[0117] Of course, in other embodiments, a plurality of first gate segments 411 may also be arranged in multiple rows in the first direction. Each row includes at least one first gate segment 411. For example, each row may include two or three first gate segments 411 arranged at intervals in the second direction.

[0118] Furthermore, in the case where a plurality of first gate segments 411 are also arranged in multiple rows in the first direction, the pattern formed by the arrangement of the plurality of first gate segments 411 is a rectangle, or a trapezoid, or a circle, or an ellipse.

[0119] In some embodiments, the first conductive connecting member 60 may be a hollow structure, that is, the first conductive connecting member 60 has a hollow region. In this way, the use of the paste can be further reduced, and the cost can be lowered.

[0120] In some embodiments, the first conductive connecting member 60 may be a discontinuous structure. In such a case, the first conductive connecting member 60 may include a plurality of first conductive connection segments (not shown in the figure) arranged at intervals. Each first conductive connection segment completely covers at least one first gate segment 411, and the area of the first conductive connection segment is larger than the area of the first gate segment 411 covered by the first conductive connection segment.

[0121] In this way, by setting the first conductive connecting member 60 as a discontinuous structure, the use of the paste can be reduced, and the cost can be lowered.

[0122] It should be noted that in this article, the area of a certain structure refers to the orthographic projection area of this structure on the back surface 11.

[0123] In some embodiments, each first conductive connection segment may cover a first gate line segment 411, and the area of the first conductive connection segment is greater than twice the area of the first gate line segment 411 covered by the first conductive connection segment.

[0124] By setting it in this way, the welding performance of the first conductive connection segment with the welding part can be ensured, and the welding effect is prevented from being affected due to the small welding contact area of the entire first conductive connection member 50.

[0125] Please refer to Figure 3 and Figure 4 , in some embodiments, in the first series connection region 111, a first insulating member 70 is provided on the second conductive gate line 50.

[0126] In this way, when welding a welding part in the first series connection region 111, the first insulating member 70 can insulate between the welding part located in the first series connection region 111 and the second conductive gate line 50, and each first conductive gate line 40 is electrically connected to the welding part in the first series connection region 111, avoiding short circuit.

[0127] Specifically, in the embodiments of the present application, in the first series connection region 111, the first conductive connection members 60 on each first conductive gate line 40 and the first insulating members 70 on each second conductive gate line 50 can be arranged in a row along the second direction. Of course, in some embodiments, they may not be arranged in a row, as long as welding and insulation can be achieved, and specific limitations are not made here.

[0128] Please refer to Figure 3 and Figures 8 - 11 , in some embodiments, in the second series connection region 112, at least part of the second conductive gate line 50 has a second discontinuous structure 51, and the second discontinuous structure 51 includes a plurality of second gate line segments 511 arranged at intervals;

[0129] The back contact battery 100 further includes a plurality of second conductive connection members 80, the second conductive connection members 80 are covered and arranged on the second discontinuous structure 51 and are electrically connected to the second gate line segments 511, the second conductive connection members 80 are insulated from the first conductive gate lines 40, and the second conductive connection members 80 are used for welding with the welding parts arranged in the second series connection region 112.

[0130] In this way, by setting the second conductive gate line 50 in a discontinuous structure in the second series connection region 112, and then realizing welding with the welding part by covering and arranging the second conductive connection members 80 on the second discontinuous structure 51, compared with the traditional method of thickening and widening the fine grid at the welding position, the amount of paste used in the process of preparing the second conductive gate line 50 can be reduced while ensuring the welding performance, thereby further reducing the cost.

[0131] Specifically, in such an embodiment, asFigure 10 and Figure 11 As shown in Figure 11 , the second conductive gate line 50 can penetrate through the back passivation film layer 110 to form a conductive connection with the second doping layer 30.

[0132] In some embodiments, the second conductive connection member 80 may not penetrate through the back passivation film layer 110, and it may be entirely located above the back passivation film layer 110 or partially embedded in the back passivation film layer 110.

[0133] In some embodiments, the second conductive connection member 80 may be partially embedded between two adjacent second gate line segments 511. The portion embedded between the second gate line segments 511 may not penetrate through the back passivation film layer 110 or may penetrate through the back passivation film layer 110, and specific details are not limited herein.

[0134] In addition, as Figure 3 shown in Figure 3 , in the embodiments of the present application, each second conductive gate line 50 may have a second discontinuous structure 51 and a second conductive connection member 80 at the second series connection region 112. At the same time, the same second conductive gate line 50 also has a second discontinuous structure 51 and a second conductive connection member 80 at the second series connection regions 112 in different positions. That is to say, in the second direction, each second conductive gate line 50 may have the same number of second discontinuous structures 51 corresponding to the second series connection regions 112.

[0135] Specifically, in the embodiments of the present application, it is preferred that all the second conductive gate lines 50 have a second discontinuous structure 51 in the second series connection region 112. In this case, the back contact battery 100 may be a main-gate-free back contact battery. Of course, in some embodiments, not all of the second conductive gate lines 50 may have a second discontinuous structure 51. In this case, a main gate segment connected to the second conductive gate line 50 may be provided between two adjacent second conductive connection members 80, and specific details are not limited herein.

[0136] In some embodiments, the second conductive connection member 80 is also conductively connected to the portions of the second conductive gate line 50 on both sides of the second discontinuous structure 51.

[0137] In this way, the second discontinuous structure 51 of the second conductive gate line 50 and the other portions on both sides of the second discontinuous structure 51 can be directly connected into a whole through the second conductive connection member 80. When setting the welding member, only by welding the welding member to the second conductive connection member 80 can the overall current collection of the second conductive gate line 50 be realized.

[0138] Specifically, in such an embodiment, the length of the second conductive connection member 80 in the second direction may be greater than the length of the second discontinuous structure 51, so as to connect the second discontinuous structure 51 and the remaining portions of the second conductive gate line 50 together.

[0139] Of course, it can be understood that in some embodiments, the second conductive connection member 80 may also be only conductively connected to the second gate line segment 511 in the second discontinuous structure 51, and the current collection of other parts can be achieved by overlapping the welding member on the parts on both sides of the second discontinuous structure 51 when welding the welding member.

[0140] In some embodiments, the second conductive gate line 50 may be made of a burn-through type paste, and the second conductive connection member 80 is made of a non-burn-through type paste. That is, the frit content in the second conductive connection member 80 is greater than the frit content in the second conductive gate line 50. In this way, during the preparation process, the second conductive connection member 80 will not burn through the back passivation film layer 110, and the usage amount of the paste can be reduced.

[0141] Specifically, in such an embodiment, the second conductive gate line 50 may be a metal gate line such as a silver gate line, an aluminum gate line, a copper gate line, a silver-coated copper gate line, etc., and the second conductive connection member 80 may be a structure such as a silver layer, a copper layer, or silver-coated copper, which is not specifically limited here.

[0142] In some embodiments, the material of the second conductive connection member 80 is different from the material of the second conductive gate line 50. For example, the second conductive gate line 50 may be a silver gate line, and the second conductive connection member 80 may be a silver-coated copper gate line, a copper gate line, etc. In such a case, the silver content in the second conductive connection member 80 is less than the silver content in the second conductive gate line 50. In this way, the usage of silver paste can be reduced, and the cost can be lowered.

[0143] Please refer to Figure 9 , in some embodiments, in the second direction, the overall length L4 of the second discontinuous structure 51 is 0.05 mm - 5 mm.

[0144] In this way, it is possible to avoid an excessive increase in process difficulty due to too small an overall length of the second discontinuous structure 51, and it is also possible to avoid too large a non-metallized area due to too large an overall length of the second discontinuous structure 51, which affects the efficiency.

[0145] It should be noted that in this application, the overall length of the second discontinuous structure 51 refers to the distance between two end points of the first conductive gate line located on both sides of the second discontinuous structure 51, that is, Figure 9 the distance between two end points of the second conductive gate line 50 shown in

[0146] Specifically, in such an embodiment, in the second direction, the overall length L4 of the second discontinuous structure 51 can be, for example, 0.05 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, or any value between 0.05 mm and 5 mm.

[0147] In some embodiments, the length L5 of a single second gate segment 511 in the second direction is greater than 0.02 mm.

[0148] Thus, it is possible to avoid a situation where the length of a single second gate segment 511 is too small, resulting in a high process difficulty and increasing the manufacturing cost.

[0149] It can be understood that in such an embodiment, regardless of the length of the second gate segment 511, within the second discontinuous structure 51, the sum of the lengths of all second gate segments 511 is less than the total length of the second discontinuous structure 51.

[0150] In some embodiments, in the second discontinuous structure 51, the spacing L6 between two adjacent second gate segments 511 in the second direction is less than or equal to 2 mm.

[0151] Thus, it is possible to avoid a situation where the length of the metal-free region between two adjacent second gate segments 511 is too small, resulting in a high control difficulty during the process, and also avoid a situation where the length of the metal-free region between two adjacent second gate segments 511 is too large, resulting in a large efficiency loss.

[0152] Specifically, in such an embodiment, the spacing L6 between two adjacent second gate segments 511 in the second direction can be, for example, 0.05 mm, 0.1 mm, 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2 mm, or any value between 0 and 2 mm. There is no specific limitation here.

[0153] As Figure 9 shown, in some embodiments, a plurality of second gate segments 511 are arranged at intervals in a row in the second direction.

[0154] Of course, in other embodiments, a plurality of second gate segments 511 can also be arranged in multiple rows in the first direction. Each row includes at least one second gate segment 511. For example, each row can include two or three second gate segments 511 arranged at intervals in the second direction.

[0155] Further, in the case where a plurality of second gate line segments 511 are also arranged in multiple rows in the first direction, the figure formed by arranging the plurality of second gate line segments 511 is a rectangle, or a trapezoid, or a circle or an ellipse.

[0156] In some embodiments, the second conductive connector 80 may be a hollow structure, that is, the second conductive connector 80 has a hollow region. In this way, the use of the paste can be further reduced, and the cost can be reduced.

[0157] In some embodiments, the second conductive connector 80 may be a discontinuous structure. In such a case, the second conductive connector 80 includes a plurality of second conductive connection segments (not shown in the figure) arranged at intervals. Each second conductive connection segment completely covers at least one second gate line segment 511, and the area of the second conductive connection segment is larger than the area of the second gate line segment 511 covered by the second conductive connection segment.

[0158] In this way, by setting the second conductive connector 80 as a discontinuous structure, the use of the paste can be reduced, and the cost can be reduced.

[0159] It should be noted that in this article, the area of a certain structure refers to the orthographic projection area of this structure on the back surface 11.

[0160] In some embodiments, each second conductive connection segment may cover one second gate line segment 511, and the area of the second conductive connection segment is more than twice the area of the second gate line segment 511 covered by the second conductive connection segment.

[0161] With such a setting, the welding performance between the second conductive connection segment and the welding part can be ensured, and it is avoided that the welding contact area of the entire second conductive connector 80 is small and affects the welding effect.

[0162] Please refer to Figure 3 and Figure 10 , in some embodiments, in the second series connection area 112, a second insulating member 90 is provided on the second conductive gate line 50.

[0163] In this way, when welding the welding part in the second series connection area 112, the second insulating member 90 can insulate between the welding part located in the second series connection area 112 and the second conductive gate line 50, and each second conductive gate line 50 is conducted with the welding part in the second series connection area 112, avoiding short circuit.

[0164] Specifically, in the embodiments of the present application, in the second series connection area 112, the second conductive connectors 80 on each second conductive gate line 50 and the second insulating members 90 on each second conductive gate line 50 may be arranged in a column along the second direction. Of course, in some embodiments, they may not be arranged in a column, as long as welding and insulation can be achieved, and specific limitations are not made here.

[0165] Please refer to Figure 12 , in some embodiments, among all the first discontinuous structures 41 within the same first series connection region 111, in the first direction, along the edge of the silicon substrate 10 (i.e., Figure 1 the upper and lower edges in

[0166] ), in the direction towards the middle position of the silicon substrate 10, the length of the first discontinuous structure 41 gradually decreases in the second direction. In this way, while ensuring the welding stability of the starting and ending welding points during welding, the metallization area in the middle region can be increased, thereby improving the efficiency.

[0167] In addition, please continue to refer to Figure 12 , in some embodiments, among all the first conductive connectors 60 within the same first series connection region 111, in the first direction, along the edge of the silicon substrate 10 towards the middle position of the silicon substrate 10, the length of the first conductive connector 60 gradually decreases in the second direction.

[0168] In this way, while ensuring the welding stability of the starting and ending welding points during welding, the length of the first conductive connectors 60 in the middle region can be reduced, thereby further reducing the use of paste.

[0169] Similarly, in some embodiments, among all the second discontinuous structures 51 within the same first series connection region 112, in the first direction, along the edge of the silicon substrate 10 (i.e., Figure 1 the upper and lower edges in

[0170] ), in the direction towards the middle position of the silicon substrate 10, the length of the second discontinuous structure 51 gradually decreases in the second direction. In this way, while ensuring the welding stability of the starting and ending welding points during welding, the metallization area in the middle region can be increased, thereby improving the efficiency.

[0171] In addition, in some embodiments, among all the second conductive connectors 80 within the same first series connection region 112, in the first direction, along the edge of the silicon substrate 10 towards the middle position of the silicon substrate 10, the length of the second conductive connector 80 gradually decreases in the second direction.

[0172] In this way, while ensuring the welding stability of the starting and ending welding points during welding, the length of the second conductive connectors 80 in the middle region can be reduced, thereby further reducing the use of paste.

[0173] Please continue to refer to Figure 12 , in some embodiments, within the same first series connection region 111, the centers of all the first conductive connectors 60 are located on the same straight line in the first direction. In this way, the welding accuracy when welding the welded parts can be improved.

[0174] Of course, please refer to Figure 13 , in some embodiments, within the same first connection area 111, the line formed by the centers of all the first conductive connectors 60 is a broken line or a wavy line.

[0175] In this way, when setting the pre-adhesive to pre-fix the welded parts, the pre-adhesive can be set at the bending positions of the broken line or the wavy line, so that the distance between the pre-adhesive and the first conductive connector at the bending position is relatively far, effectively avoiding false soldering in the subsequent welding process.

[0176] Similarly, in some embodiments, within the same second connection area 112, the line formed by the centers of all the second conductive connectors 80 is a broken line or a wavy line.

[0177] In this way, when setting the pre-adhesive to pre-fix the welded parts, the pre-adhesive can be set at the bending positions of the broken line or the wavy line, so that the distance between the pre-adhesive and the first conductive connector at the bending position is relatively far, effectively avoiding false soldering in the subsequent welding process.

[0178] Please refer to Figure 14 , in some embodiments, among all the first grid segments 411 of the first discontinuous structure 41, in the second direction, along the direction from both ends of the first discontinuous structure 41 towards the middle position of the first discontinuous structure 41, the area of the first grid segment 411 gradually becomes smaller.

[0179] In this way, by setting the areas of the first grid segments 411 at both ends of the first discontinuous structure 41 to be larger, it can further reduce the use of the paste while ensuring the welding tensile force.

[0180] Specifically, in such an embodiment, in order to achieve different area sizes, it can be to change the length of the first grid segment 411 (i.e., the length in the second direction) in the case of the width of the first grid segment 411 (i.e., the length in the first direction), or it can be to change the width of the first grid segment 411 (i.e., the length in the first direction) in the case of the length of the first grid segment 411 (i.e., the length in the second direction), and specific details are not limited here.

[0181] Similarly, please continue to refer to Figure 14 , in some embodiments, among all the second grid segments 511 of the second discontinuous structure 51, in the second direction, along the direction from both ends of the second discontinuous structure 51 towards the middle position of the second discontinuous structure 51, the area of the second grid segment 511 gradually becomes smaller.

[0182] In this way, by setting the areas of the second grid segments 511 at both ends of the second discontinuous structure 51 to be larger, it can further reduce the use of the paste while ensuring the welding tensile force.

[0183] Specifically, in such an embodiment, in order to achieve different area sizes, it can be the case of changing the length of the second gate segment 511 (i.e., the length in the second direction) when the width of the second gate segment 511 (i.e., the length in the first direction) is considered, or it can be the case of changing the width of the second gate segment 511 (i.e., the length in the first direction) when the length of the second gate segment 511 (i.e., the length in the second direction) is considered. There is no specific limitation here.

[0184] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0185] Although the embodiments of this application have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and purposes of this application. The scope of this application is defined by the claims and their equivalents.

Claims

1. A back contact battery, characterized in that, Comprising: A silicon substrate having opposite back and front surfaces, the back surface having a plurality of first series connection regions and a plurality of second series connection regions for arranging welding parts; A plurality of first doping layers and a plurality of second doping layers provided on the back surface, the first doping layers and the second doping layers having opposite polarities, the plurality of first doping layers and the plurality of second doping layers being alternately arranged along a first direction and extending along a second direction, the second direction intersecting the first direction; A first conductive gate line provided on the first doping layer and a second conductive gate line provided on the second doping layer, the first conductive gate line being conductively connected to the first doping layer, the second conductive gate line being conductively connected to the second doping layer, the first conductive gate line and the second conductive gate line both extending along the second direction, the first series connection regions and the second series connection regions intersecting the first conductive gate line and the second conductive gate line; in the first series connection region, at least part of the first conductive gate line has a first discontinuous structure, the first discontinuous structure including a plurality of first gate segments arranged at intervals; And A plurality of first conductive connectors, the first conductive connectors being provided to cover the first discontinuous structure and being conductively connected to the first gate segments, the first conductive connectors being insulated from the second conductive gate line, the first conductive connectors being used for welding with the welding parts provided in the first series connection region.

2. The back-contact battery according to claim 1, wherein The first conductive connectors are also conductively connected to the portions of the first conductive gate line on both sides of the first discontinuous structure.

3. The back-contact battery according to claim 1, characterized in that The glass frit content in the first conductive connectors is greater than the glass frit content in the first conductive gate line; and / or The material of the first conductive connectors is different from the material of the first conductive gate line, and the silver content in the first conductive connectors is less than the silver content in the first conductive gate line.

4. The back contact battery according to claim 1, characterized in that The first conductive connectors are partially embedded between two adjacent first gate segments.

5. The back contact battery according to claim 1, wherein In the second direction, the overall length of the first discontinuous structure is 0.05 mm - 5 mm.

6. The back-contact battery according to claim 1, characterized in that, The length of a single first gate segment in the second direction is greater than 0.02 mm.

7. The back contact battery according to claim 1, wherein In the first discontinuous structure, the spacing between two adjacent first gate segments in the second direction is less than or equal to 2 mm.

8. The back-contact battery according to claim 1, wherein The first conductive connectors are in a hollow structure.

9. The back-contact battery according to claim 1, characterized in that, The first conductive connectors are in a discontinuous structure, the first conductive connectors including a plurality of first conductive connection segments arranged at intervals, each first conductive connection segment completely covering at least one first gate segment, and the area of the first conductive connection segment being greater than the area of the first gate segment covered by the first conductive connection segment.

10. The back contact battery according to claim 9, characterized in that, Each first conductive connection segment covers one first gate segment, and the area of the first conductive connection segment is greater than twice the area of the first gate segment covered by the first conductive connection segment.

11. The back contact battery according to claim 1, characterized in that, The plurality of first gate segments are arranged in a row at intervals along the second direction; or The plurality of first gate segments are arranged in multiple rows in the first direction, and each row includes at least one first gate segment.

12. The back contact battery according to claim 11, characterized in that, When a plurality of the first gate line segments are arranged in multiple rows in the first direction, the figure formed by arranging the plurality of the first gate line segments is a rectangle, or a trapezoid, or a circle or an ellipse.

13. The back-contact battery according to claim 1, characterized in that, In the first series connection region, a first insulating member is provided on the second conductive gate line.

14. The back contact battery according to claim 1, characterized in that, Among all the first discontinuous structures in the same first series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the first discontinuous structure in the second direction gradually decreases; and / or Among all the first conductive connection members in the same first series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the first conductive connection member in the second direction gradually decreases.

15. The back-contact battery according to claim 1, characterized in that, In the same first series connection region, the centers of all the first conductive connection members are located on the same straight line in the first direction; or, in the same first series connection region, the connection line formed by the centers of all the first conductive connection members is a broken line or a wavy line.

16. The back contact battery according to claim 1, characterized in that, The shape of the first gate line segment is dot-shaped or line-shaped.

17. The back-contact battery according to claim 1, characterized in that, Among all the first gate line segments of the first discontinuous structure, in the second direction, along the direction from both ends of the first discontinuous structure towards the middle position of the first discontinuous structure, the area of the first gate line segment gradually decreases.

18. The back contact battery according to claim 1, characterized in that, In the second series connection region, at least part of the second conductive gate line has a second discontinuous structure, and the second discontinuous structure includes a plurality of second gate line segments arranged at intervals; The back contact battery further includes a plurality of second conductive connection members, the second conductive connection members are covered on the second discontinuous structure and are electrically connected to the second gate line segments, the second conductive connection members are insulated from the first conductive gate line, and the second conductive connection members are used for welding with the welding members arranged in the second series connection region.

19. The back-contact battery according to claim 18, characterized in that, The second conductive connection member is also electrically connected to the parts of the second conductive gate line on both sides of the second discontinuous structure.

20. The back contact battery according to claim 18, characterized in that, The glass frit content in the second conductive connection member is greater than the glass frit content in the second conductive gate line; and / or The material of the second conductive connection member is different from the material of the second conductive gate line, and the silver content in the second conductive connection member is less than the silver content in the second conductive gate line.

21. The back contact battery according to claim 18, characterized in that, The second conductive connection member is partially embedded between two adjacent second gate line segments.

22. The back contact battery according to claim 18, characterized in that, In the second direction, the overall length of the second discontinuous structure is 0.05 mm - 5 mm.

23. The back-contact battery according to claim 18, characterized in that, The length of a single second gate line segment in the second direction is greater than 0.02 mm.

24. The back-contact battery according to claim 18, wherein, In the second discontinuous structure, the distance between two adjacent second gate line segments in the second direction is less than 2 mm.

25. The back-contact battery according to claim 18, characterized in that, The second conductive connection member is a hollow structure.

26. The back-contact battery according to claim 18, wherein The second conductive connection member is a discontinuous structure, the second conductive connection member includes a plurality of second conductive connection segments, each second conductive connection segment completely covers at least one second gate line segment, and the area of the second conductive connection segment is greater than the area of the second gate line segment covered by the second conductive connection segment.

27. The back-contact battery according to claim 26, wherein, Each of the second conductive connection segments covers one of the second gate line segments, and the area of the second conductive connection segment is greater than twice the area of the second gate line segment covered by the second conductive connection segment.

28. The back-contact battery according to claim 18, wherein, A plurality of the second gate line segments are arranged at intervals in a row along the second direction; or A plurality of the second gate line segments are arranged in multiple rows in the first direction, and each row includes at least one of the second gate line segments.

29. The back contact battery according to claim 28, wherein, When a plurality of the second gate line segments are arranged in multiple rows in the first direction, the figure formed by arranging the plurality of the second gate line segments is a rectangle, or a trapezoid, or a circle or an ellipse.

30. The back contact battery according to claim 18, characterized in that, In the second series connection region, a second insulating member is provided on the first conductive gate line.

31. The back-contact battery according to claim 18, characterized in that, Among all the second discontinuous structures in the same second series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the second discontinuous structure in the second direction gradually decreases; and / or Among all the second conductive connection members in the same second series connection region, in the first direction, along the direction from the edge of the silicon substrate towards the middle position of the silicon substrate, the length of the second conductive connection member in the second direction gradually decreases.

32. The back contact battery according to claim 18, characterized in that, In the same second series connection region, the centers of all the second conductive connection members are located on the same straight line in the first direction; or, in the same second series connection region, the connection line formed by the centers of all the second conductive connection members is a broken line or a wavy line.

33. The back-contact battery according to claim 18, characterized in that, The shape of the second gate line segment is dot-shaped or line-shaped.

34. The back-contact battery according to claim 18, wherein, Among all the second gate line segments of the second discontinuous structure, in the second direction, along the direction from both ends of the second discontinuous structure towards the middle position of the second discontinuous structure, the area of the second gate line segment gradually decreases.

35. The back contact battery according to any one of claims 1-34, characterized in that, The doping layers closest to the two edges of the silicon substrate in the first direction are both the first doping layers, and the doping type of the first doping layer is opposite to that of the silicon substrate.

36. A battery assembly, characterized in that, Including a back contact battery according to any one of claims 1-35.

37. A photovoltaic system, characterized in that, Including the battery assembly according to claim 36.

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