Spray head structure and semiconductor device

Abstract

The utility model provides a spraying head structure and semiconductor equipment, the spraying head structure comprises a spraying head body, the spraying head body comprises a first spraying part and a second spraying part, the first spraying part comprises a first air inlet surface and a first air outlet surface, and the second spraying part comprises a second air inlet surface and a second air outlet surface; the first gas pipeline comprises a first gas inlet part and a first gas outlet part, and the first gas outlet part is connected to the first gas inlet surface of the first spraying part; the second gas pipeline comprises a second gas inlet part and a second gas outlet part, and the second gas outlet part is connected to the second gas inlet surface of the second spraying part. According to the spraying head, different spraying parts are arranged on the spraying head body, and the gas inlet surfaces of the different spraying parts are communicated to different gas pipelines, so that the spraying processes of the different spraying parts are independently controllable, the corresponding spraying processes can be controlled according to the deposition requirements of different positions, and the film thickness uniformity can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a showerhead structure and a semiconductor device. Background Art

[0002] In the prior art, titanium nitride (TiN) is used as a barrier layer in the glue layer to isolate and prevent the strongly oxidizing WF6 (tungsten hexafluoride) from reacting with the bonding Ti. The TiN thin film is deposited in the TXZ chamber (semiconductor process chamber) by decomposing TDMAT (tetrakis(dimethylamino)titanium) to generate TiN and other impurity compounds and obtaining a dense and lower resistivity TiN thin film through plasma treatment. The most important reaction factor affecting the film thickness is the deposition temperature. The higher the temperature, the higher the deposition rate and the thicker the obtained film. Another factor affecting the film thickness is the deposition time. Therefore, at the same temperature, different deposition times will also affect the film thickness.

[0003] According to the daily monitor data of the semiconductor process chamber, after the existing thin film is deposited, the thickness at the center point is about 12% thinner than that at other positions. As Figure 1 shown, the thickness of the center point of the thin film is only 44.8 Å, while the maximum thickness of the outer ring can reach 53 Å. This will result in a poor U% of the film thickness, and the RS (resistance) at the center point will be higher than that at other positions, which will affect the resistance at the center position. Therefore, it is crucial to optimize and improve the TiN thickness at the center point. According to the machine adjustment rule, a 1°C change in the heater temperature will affect the film thickness by about 2 Å. At the same temperature, the thickness can also be increased by increasing the deposition time, but in this way, the film thickness of the entire wafer will increase together, and the thickness of the center point of the wafer cannot be controlled independently. Summary of the Utility Model

[0004] Aiming at the problems in the prior art, the purpose of this application is to provide a showerhead structure and a semiconductor device, which can realize the independent control of the spraying process of different spraying parts, so that the corresponding spraying process can be controlled according to the deposition requirements of different positions, which is beneficial to improving the film thickness uniformity.

[0005] The first aspect of this application provides a showerhead structure, including:

[0006] A showerhead body, the showerhead body includes a first spraying part and a second spraying part, the first spraying part includes a first air inlet surface and a first air outlet surface, and the second spraying part includes a second air inlet surface and a second air outlet surface;

[0007] A first gas pipeline, including a first air inlet part and a first air outlet part, and the first air outlet part is connected to the first air inlet surface of the first spraying part;

[0008] The second gas pipeline includes a second inlet part and a second outlet part, and the second outlet part is connected to the second inlet surface of the second spraying part.

[0009] In some embodiments, the first spraying part is an annular shape surrounding the outside of the second spraying part.

[0010] In some embodiments, the first spraying part and the second spraying part are concentrically arranged.

[0011] In some embodiments, at least a part of the first outlet part is nested outside the second outlet part, and the bottom openings of the first outlet part and the second outlet part are located in the same plane.

[0012] In some embodiments, the first outlet part of the first gas pipeline is a hollow cylindrical shape, and openings are provided on the side surface of the first outlet part. The second gas pipeline passes through the openings so that at least a part of the second outlet part is located inside the first outlet part.

[0013] In some embodiments, the second outlet part of the second gas pipeline is a hollow cylindrical shape. The first outlet part and the second outlet part are coaxially arranged. A second bending part is provided between the first outlet part and the second inlet part, and at least a part of the second bending part passes through the opening of the first outlet part.

[0014] In some embodiments, a first bending part and a first extending part are provided between the first outlet part and the first inlet part of the first gas pipeline. A second extending part is provided between the second bending part and the second inlet part of the second gas pipeline. The first extending part is parallel to the second extending part.

[0015] In some embodiments, the inner diameter of the opening of the first outlet part corresponds to the outer diameter of the first inlet surface of the first spraying part.

[0016] In some embodiments, the inner diameter of the opening of the second outlet part corresponds to the outer diameter of the second inlet surface of the second spraying part.

[0017] The second aspect of the present application provides a semiconductor device including the above-mentioned spraying head structure.

[0018] The spraying head structure and the semiconductor device provided by the present application have the following advantages:

[0019] In this application, different spraying parts are provided on the spray head body, and the air inlet surfaces of different spraying parts are respectively connected to different gas pipelines. The gas flow times of the two gas pipelines can be controlled separately, so that the spraying processes of different spraying parts can be controlled independently. Therefore, the corresponding spraying processes can be controlled according to the deposition requirements at different positions, improving the problem of large differences in the thickness of different positions of the thin film and being beneficial to improving the thickness uniformity of the thin film. Description of the Drawings

[0020] Other features, objects, and advantages of this application will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings.

[0021] Figure 1 is a schematic diagram of the thickness test of the thin film after depositing the thin film using an existing semiconductor device;

[0022] Figure 2 is a schematic diagram of the spraying range of the spray head body according to an embodiment of this application.

[0023] Figure 3 is a schematic diagram of the structures of the first gas pipeline and the second gas pipeline according to an embodiment of this application.

[0024] Reference Signs:

[0025] 1 Spray head body 22 First bending part

[0026] 11 First spraying part 23 First extending part

[0027] 12 Second spraying part 3 Second gas pipeline

[0028] 2 First gas pipeline 31 Second gas outlet part

[0029] 21 First gas outlet part 32 Second bending part Detailed Embodiments

[0030] Example embodiments will now be described more fully. However, the example embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The "or" or "or" in the specification may mean "and" or "or". Although terms such as "upper", "lower", "between" etc. may be used in this specification to describe different exemplary features and elements of this application, these terms are used herein only for convenience, for example, according to the directions of the examples described in the drawings. Nothing in this specification should be construed as requiring a specific three-dimensional direction of the structure to fall within the scope of this application. Although terms such as "first" or "second" etc. are used in this specification to represent certain features, they are only for representational purposes and do not limit the quantity and importance of the specific features.

[0031] To solve the problem of uneven thickness of thin film deposition in the prior art, the present application provides a showerhead structure and a semiconductor device including the showerhead structure. The semiconductor device is, for example, a plasma processor or other types of semiconductor process equipment that requires gas spraying. The showerhead structure is installed on the top of the semiconductor device, and the showerhead structure includes: a showerhead body, the showerhead body includes a first spraying portion and a second spraying portion, the first spraying portion includes a first air inlet surface and a first air outlet surface, and the second spraying portion includes a second air inlet surface and a second air outlet surface; a first gas pipeline, including a first air inlet portion and a first air outlet portion, the first air outlet portion is connected to the first air inlet surface of the first spraying portion; a second gas pipeline, including a second air inlet portion and a second air outlet portion, the second air outlet portion is connected to the second air inlet surface of the second spraying portion. The gas flow time of the first gas pipeline and the second gas pipeline can be controlled respectively, so that the spraying processes of the first spraying portion and the second spraying portion can be controlled separately, thereby the corresponding spraying processes can be controlled according to the deposition requirements at different positions, improving the problem of large thickness differences at different positions of the thin film, and being beneficial to improving the thickness uniformity of the thin film.

[0032] The implementation manner of the showerhead structure in specific embodiments will be specifically introduced below with reference to the drawings. The same reference numerals in the drawings represent the same or similar structures, and thus their repeated descriptions will be omitted. It can be understood that the following description and drawings are only examples and do not limit the protection scope of the present application.

[0033] In an embodiment of the present application, the semiconductor device includes a cavity, a showerhead structure provided on the top of the cavity, and a stage provided inside the cavity, and the stage is used to carry a wafer. As Figure 2 and Figure 3As shown, in this embodiment, the spray head structure includes: a spray head body 1, the spray head body 1 includes a first spray portion 11 and a second spray portion 12, the first spray portion 11 includes a first air inlet surface and a first air outlet surface, and the second spray portion 12 includes a second air inlet surface (not shown in the figure) and a second air outlet surface; a first gas pipeline 2, including a first air inlet portion (not shown in the figure) and a first air outlet portion 21, and the first air outlet portion 21 is connected to the first air inlet surface of the first spray portion 11; a second gas pipeline 3, including a second air inlet portion and a second air outlet portion 31, and the second air outlet portion 31 is connected to the second air inlet surface of the second spray portion 12.

[0034] Therefore, in this application, by respectively arranging the first spray portion 11 and the second spray portion 12 on the spray head body 1, and the air inlet surfaces of the first spray portion 11 and the second spray portion 12 are respectively communicated with different first gas pipelines 2 and second gas pipelines 3, the gas flow time of the two gas pipelines can be respectively controlled, so that the spraying processes of the first spray portion 11 and the second spray portion 12 can be independently controlled, and thus the corresponding spraying processes can be controlled according to the deposition requirements at different positions, improving the problem of large thickness differences at different positions of the thin film, which is beneficial to improving the thickness uniformity of the thin film. For the positions with a lower deposition thickness in the prior art, the gas flow time of the corresponding gas pipeline can be increased.

[0035] As Figure 2 and Figure 3 shown, the first spray portion 11 is an outer ring portion, the second spray portion 12 is an inner ring portion, and the first spray portion 11 is an annular shape surrounding the outside of the second spray portion 12. The first air inlet surface of the first spray portion 11 is the upper surface, and the first air outlet surface is the lower surface. The second air inlet surface of the second spray portion 12 is the upper surface, and the second air outlet surface is the lower surface. The first spray portion 11 and the second spray portion 12 are concentrically arranged. Therefore, the first spray portion 11 corresponds to the outer ring position of the circle, and the second spray portion 12 corresponds to the inner ring position of the wafer. At least part of the first air outlet portion 21 of the first gas channel is nested outside the second air outlet portion 31 of the second gas channel. The inner diameter of the opening of the first air outlet portion 21 corresponds to the outer diameter of the first air inlet surface of the first spray portion 11. The inner diameter of the opening of the second air outlet portion 31 corresponds to the outer diameter of the second air inlet surface of the second spray portion 12. By extending the gas flow time in the second gas channel, the thickness of the center position of the thin film on the wafer surface corresponding to the inner ring portion can be increased, improving the overall uniformity of the thin film.

[0036] As Figure 3As shown, the first air outlet portion 21 of the first gas pipeline 2 is a hollow cylinder, and the side surface of the first air outlet portion 21 is provided with an opening. The second gas pipeline 3 is inserted through the opening so that at least part of the second air outlet portion 31 is located inside the first air outlet portion 21. The second air outlet portion 31 of the second gas pipeline 3 is a hollow cylinder, and the first air outlet portion 21 and the second air outlet portion 31 are coaxially arranged. So that the bottom opening of the first air outlet portion 21 faces the first spraying portion 11, and the bottom opening of the second air outlet portion 31 faces the second spraying portion 12. The bottom openings of the first air outlet portion 21 and the second air outlet portion 31 are located in the same plane and can simultaneously dock the first air inlet surface of the first spraying portion 11 and the second air inlet surface of the second spraying portion 12.

[0037] As Figure 3 As shown, a first bending portion 22 and a first extension portion 23 are provided between the first air outlet portion 21 of the first gas pipeline 2 and the first air inlet portion. A second bending portion 32 and a second extension portion 33 are provided between the second air outlet portion 31 of the second gas pipeline 3 and the second air inlet portion. At least part of the second bending portion 32 is inserted through the side opening of the first air outlet portion 21. The end of the first extension portion 23 is connected to the first air inlet portion, and the end of the second extension portion 33 is connected to the second air inlet portion. Gas is introduced at the first air inlet portion and the second air inlet portion, and the gas flow rate and gas flow time of the gas introduced at the two places can be controlled separately. The first extension portion 23 is parallel to the second extension portion 33, which is more conducive to the layout of the gas pipeline. However, the present application is not limited thereto, and the first gas pipeline 2 and the second gas pipeline 3 can also adopt other cooperation methods, which also belong to the protection scope of the present application.

[0038] This spray head structure is used for the TXZ chamber, for example. It generates TiN and other impurity compounds by decomposing TDMAT gas and obtains a dense TiN film through plasma treatment. Among them, the TDMAT gas is uniformly dispersed on the wafer surface through the spray head structure by aligning the Gas box (gas box) with the spray head structure, and then film formation is carried out through plasma treatment. By adopting the spray head structure of this embodiment, the TDMAT gas introduction amounts at the center position and the outer ring can be controlled separately, so as to control the film formation thicknesses at the two positions separately. By reasonably adjusting the gas introduction amounts of the two gas pipelines, the film formation thicknesses at the center position and the outer ring can be made consistent, improving the film thickness uniformity.

[0039] The above content is a further detailed description of the present application in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present application is only limited to these descriptions. For those of ordinary skill in the technical field to which the present application belongs, without departing from the concept of the present application, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the protection scope of the present application.

Claims

1. A spray head structure, characterized in that For a semiconductor device, the showerhead structure comprises: A showerhead body, the showerhead body comprising a first shower part and a second shower part, the first shower part comprising a first air inlet surface and a first air outlet surface, and the second shower part comprising a second air inlet surface and a second air outlet surface; A first gas pipeline, comprising a first air inlet part and a first air outlet part, the first air outlet part being connected to the first air inlet surface of the first shower part; A second gas pipeline, comprising a second air inlet part and a second air outlet part, the second air outlet part being connected to the second air inlet surface of the second shower part.

2. The sprinkler head structure according to claim 1, characterized in that, The first shower part is an annular shape surrounding the outside of the second shower part.

3. The sprinkler head structure according to claim 2, wherein, The first shower part and the second shower part are concentrically arranged.

4. The shower head structure according to claim 2, wherein, At least part of the first air outlet part is nested outside the second air outlet part, and the bottom openings of the first air outlet part and the second air outlet part are located in the same plane.

5. The shower head structure according to claim 4, characterized in that, The first air outlet part of the first gas pipeline is a hollow cylinder, and the side surface of the first air outlet part is provided with an opening, and the second gas pipeline passes through the opening so that at least part of the second air outlet part is located inside the first air outlet part.

6. The shower head structure according to claim 5, wherein, The second air outlet part of the second gas pipeline is a hollow cylinder, the first air outlet part and the second air outlet part are coaxially arranged, and a second bending part is provided between the first air outlet part and the second air inlet part, and at least part of the second bending part passes through the opening of the first air outlet part.

7. The shower head structure according to claim 5, wherein, A first bending part and a first extension part are provided between the first air outlet part and the first air inlet part of the first gas pipeline, a second extension part is provided between the second bending part and the second air inlet part of the second gas pipeline, and the first extension part is parallel to the second extension part.

8. The sprinkler head structure according to claim 2, wherein The inner diameter of the opening of the first air outlet part corresponds to the outer diameter of the first air inlet surface of the first shower part.

9. The sprinkler head structure according to claim 2, wherein, The inner diameter of the opening of the second air outlet part corresponds to the outer diameter of the second air inlet surface of the second shower part.

10. A semiconductor device, characterized in that, Comprising the showerhead structure according to any one of claims 1 to 9.

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