Horizontal airflow multi-piece chemical vapor deposition equipment

Abstract

The utility model discloses horizontal airflow multi-piece chemical vapor deposition equipment, which relates to the technical field of semiconductor material production equipment and comprises a reaction cavity, an air inlet system, an exhaust system and a carrying system, an isolation cylinder is arranged in the reaction cavity, a base is arranged in the isolation cylinder, a tray is arranged on the base and used for bearing wafers, and the bottom of the base is connected with a rotating motor through a rotating shaft. According to the horizontal airflow multi-piece chemical vapor deposition equipment disclosed by the utility model, the gas source is respectively communicated with the reaction gas flow channel and the protective gas flow channel in the reaction cavity through the gas inlet interface, and the thermal field heating body is completely isolated from a wafer through the protective gas flow channel, so that deposition adhesion caused by direct contact is avoided; a plurality of wafers are evenly distributed on the inner circumference of the base, and the whole base rotates around the center shaft so that the basic epitaxial uniformity requirement can be met. And the rotation and planetary rotation of the wafer are increased, so that the diffusion of radial reaction gas on the surface of the substrate is facilitated, and the film thickness uniformity of the epitaxial layer and the utilization rate of the reaction gas are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor material production equipment, in particular to a horizontal gas flow multi-wafer chemical vapor deposition equipment. Background Art

[0002] At present, chemical vapor deposition method is mainly used for epitaxial layer growth of silicon carbide. Compared with single-wafer equipment, multi-wafer equipment has a significant improvement in production efficiency, meeting the development needs of the semiconductor industry. The current horizontal epitaxial growth equipment often uses quartz as the reaction chamber, and adopts electromagnetic induction heating. An alternating magnetic field is generated by an intermediate frequency power supply and an induction coil, so that an induced current is generated in the graphite conductor in the reaction chamber, thereby generating heat by the current thermal effect, and heating to the epitaxial growth temperature, generally reaching 1500°C to 1800°C. The multi-wafer equipment needs to expand the size of the reaction chamber to place multiple wafers, and at the same time meet the function of the pedestal rotation. The combination of graphite resistive heating and a metal furnace chamber can achieve the above functions and has the advantages of simple processing, cost reduction and efficiency improvement.

[0003] Reaction by-products that are not easy to remove will adhere to the surface of the graphite heating component in long-term contact with the gas in the reaction zone at high temperature, causing changes in the thermal field during the later use of the equipment and affecting the epitaxial effect. Summary of the Invention

[0004] The purpose of the utility model is to provide a horizontal gas flow multi-wafer chemical vapor deposition equipment, which drives multiple wafers to rotate through a tray, so as to solve the problem of low single-wafer epitaxial efficiency in the prior art, and realize the function of multi-wafer simultaneous epitaxy in a single chamber and ensure epitaxial uniformity.

[0005] To achieve the above purpose, the utility model provides the following scheme:

[0006] The utility model provides a horizontal gas flow multi - slice chemical vapor deposition device, which includes a reaction chamber, an intake system, an exhaust system and a handling system; an intake interface is arranged on one side of the reaction chamber and is connected to the intake system, and an exhaust interface is arranged on the other side of the reaction chamber and is connected to the exhaust system; the intake system adjusts the flow rate and controls the opening and closing of the intake pipeline, and passes reaction gas into the reaction chamber through the intake interface, and the reaction gas horizontally flows through the surface of the wafer to be deposited and then enters the exhaust system; the exhaust system includes a vacuum pump, a vacuum valve and a pressure control valve that are sequentially connected through an exhaust pipeline; the handling system includes a robot chamber and a wafer loading chamber, a vacuum robot is arranged in the robot chamber, and gate valves are respectively arranged at both ends of the robot chamber for connecting the wafer loading chamber and the reaction chamber; a thermal field is arranged in the reaction chamber, and the thermal field includes an isolation cylinder, a thermal field heating element and a heat preservation layer, the thermal field heating element is arranged outside the isolation cylinder, and the heat preservation layer is arranged outside the thermal field heating element; a base is arranged inside the isolation cylinder, a tray is arranged on the base, the tray is used for carrying the wafer, and the bottom of the base is connected to a rotation motor through a rotating shaft; an exhaust component is arranged on one side of the reaction chamber close to the exhaust system, and the exhaust component is used for guiding the flow direction of the reaction gas to the exhaust system.

[0007] Optionally, the thermal field heating element is a graphite heating element; the reaction chamber is a metal reaction chamber; the graphite heating element is arranged inside the reaction chamber, and the graphite heating element includes a front heating element, a middle heating element and a rear heating element; the front heating element and the rear heating element are respectively arranged at both ends of the middle heating element.

[0008] Optionally, the thermal field heating element is a graphite component arranged inside the reaction chamber; the graphite component generates induced current and self - heats under the influence of an electromagnetic induction coil; the reaction chamber is a quartz reaction chamber, the induction coil is arranged outside the quartz reaction chamber, and the induction coil includes a front induction coil, a middle induction coil and a rear induction coil; the front induction coil and the rear induction coil are respectively arranged at both ends of the middle induction coil.

[0009] Optionally, a plurality of grooves are arranged on the tray, and the grooves are used for holding the wafers.

[0010] Optionally, the base includes an upper base and a lower base. The upper base is disposed above the lower base, and a rotating intake air passage and a rotating exhaust air passage are provided between the upper base and the lower base. The tray includes a large plate and a small plate. A plurality of grooves are provided on the large plate, and one small plate is respectively disposed in each groove. At least two obliquely arranged rotating air holes are provided in the groove, and the rotating air holes are communicated with the rotating intake air passage. The groove is communicated with the rotating exhaust air passage. A guiding groove is provided on the bottom surface of the small plate. The air flow entering through the rotating intake air passage blows from the rotating air holes to the guiding groove to rotate the small plate in the groove.

[0011] Optionally, at least three grooves are provided on the large plate.

[0012] Optionally, the rotating motor adopts a hollow motor, the rotating shaft adopts a hollow rotating shaft. The hollow motor is connected to one end of the hollow rotating shaft, the other end of the hollow rotating shaft is connected to the lower base. A rotating air inlet is provided in the hollow part of the hollow motor, and the rotating air inlet is communicated with a gas supply mechanism. The hollow rotating shaft is communicated with the rotating intake air passage.

[0013] Optionally, a connecting flange is provided at the bottom of the reaction chamber, and a fixing seat is provided at the top of the rotating motor. A sealing member is provided between the connecting flange and the fixing seat, and a bearing and a bearing retaining ring are provided between the sealing member and the rotating shaft.

[0014] Optionally, the exhaust assembly is provided with a plurality of exhaust ports, and the gas is guided and aggregated through an exhaust pipe assembly and enters the exhaust system. A first exhaust port is provided in the middle of the exhaust assembly, and second exhaust ports are provided around the first exhaust port on the exhaust assembly. The first exhaust port is communicated with the reaction air passage inside the isolation cylinder, the second exhaust ports are communicated with the protection air passage outside the isolation cylinder, and both the first exhaust port and the second exhaust ports are communicated with the exhaust pipe assembly.

[0015] Optionally, the outer wall of the reaction chamber includes an inner wall of the reaction chamber and an outer wall of the reaction chamber. A cooling jacket is formed between the inner wall of the reaction chamber and the outer wall of the reaction chamber.

[0016] The utility model has achieved the following technical effects compared with the prior art:

[0017] The horizontal air flow multi - slice chemical vapor deposition equipment of the present utility model has the gas source gas adjusted by the intake system connected to the reaction gas flow path and the protective gas flow path in the reaction chamber respectively through the intake interface. Through the protective gas flow path, the heat field heating element is completely isolated from the wafer, avoiding direct contact to form deposition adhesion. A plurality of wafers are evenly distributed on the inner circumference of the base, and the whole base rotates around the central axis to meet the basic epitaxial uniformity requirements. On the basis of the overall revolution of the base, the self - rotation of the wafer is added. The planetary rotation helps the radial reaction gas to diffuse on the substrate surface, improving the uniformity of the epitaxial layer film thickness and the utilization rate of the reaction gas. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the drawings described below are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0019] Figure 1 Schematic diagram of the composition of the horizontal chemical vapor deposition equipment;

[0020] Figure 2 Schematic diagram of the internal composition of the reaction chamber;

[0021] Figure 3 Schematic diagram of the combination of the base and the external rotation mechanism;

[0022] Figure 4 Schematic diagram of the planetary base structure;

[0023] Figure 5 Partial enlarged view of the small - plate loading area of the planetary base;

[0024] Figure 6 Schematic diagram of the large - plate structure of the planetary base;

[0025] Figure 7 Schematic diagram of the reaction chamber intake when the three - slice tray is loaded;

[0026] Figure 8 Schematic diagram of the reaction chamber intake when the six - slice tray is loaded;

[0027] Figure 9 Schematic diagram of the structural layout of the quartz reaction chamber and the electromagnetic induction coil.

[0028] Explanation of the reference numerals:

[0029] 1. Reaction chamber; 2. Gate valve; 3. Robot chamber; 4. Vacuum robot; 5. Wafer loading chamber; 6. Gas source; 7. Intake interface; 8. Thermal insulation layer; 9. Heat generating body of thermal field; 9-1. Front heat generating body; 9-2. Middle heat generating body; 9-3. Rear heat generating body; 10. Square isolation cylinder; 11. Base; 12. Rotation shaft; 13. Rotation motor; 14. Exhaust assembly; 15. Exhaust pipeline; 16. Reaction gas flow path; 17. Protection gas flow path; 18. Quartz heat insulation plate; 19. Inner wall of reaction chamber; 20. Outer wall of reaction chamber; 21. Cooling jacket; 22. Quartz reaction chamber; 23. Electromagnetic induction coil; 24. Thermal insulation cover; 25. Tray; 26. Wafer; 27. Connecting flange; 28. Bearing; 29. Bearing retaining ring; 30. Seal; 31. Fixed seat; 32. Rotating intake port; 33. Hollow motor; 34. Hollow rotating shaft; 35. Lower base; 36. Lateral outlet; 37. Upper base; 38. Large plate; 39. Graphite rotor; 40. Small plate; 41. Guide groove; 42. Rotating air hole; 43. Rotating intake gas flow path; 44. Outlet gas flow path; 45. Groove; 46. Rotor hole; 47. Confluence port; 48. Three-piece tray; 49. Outer partition; 50. Transition zone; 51. Intermediate partition; 52. Six-piece tray; 53. Rectifying plate; a. Thermal field area; b. Reaction area. Detailed implementation mode

[0030] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0031] The purpose of the present invention is to provide a horizontal gas flow multi-piece chemical vapor deposition device, which drives multiple wafers to rotate through a tray to solve the problem of low single-chip epitaxial efficiency in the prior art and realize the function of multi-piece simultaneous epitaxy in a single chamber and ensure epitaxial uniformity.

[0032] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation modes.

[0033] Embodiment 1:

[0034] As Figures 1 to 3As shown in the figure, this embodiment provides a horizontal gas flow multi - slice chemical vapor deposition device, which includes a reaction chamber 1, a gate valve 2, a robot chamber 3, a vacuum robot 4, a wafer loading chamber 5, a gas source 6, and an intake interface 7; the gas source 6 is respectively connected to a reaction gas flow channel 16 and a protection gas flow channel 17 inside the reaction chamber 1 through the intake interface 7; at the other end of the reaction chamber 1, there are successively arranged a gate valve 2, a robot chamber 3, a gate valve 2, and a wafer loading chamber 5; the vacuum robot 4 is arranged inside the robot chamber 3, and the vacuum robot 4 is used to place the wafer 26 in the wafer loading chamber 5 into the reaction chamber 1 and place the processed wafer 26 in the reaction chamber 1 into the wafer loading chamber 5; an isolation cylinder is arranged inside the reaction chamber 1, a thermal field heating element 9 is arranged outside the isolation cylinder, and a heat preservation layer 8 is arranged outside the thermal field heating element 9; a base 11 is arranged inside the isolation cylinder, a tray 25 is arranged on the base 11, the tray 25 is used to carry the wafer 26, and the bottom of the base 11 is connected to a rotating motor 13 through a rotating shaft 12; an exhaust mechanism is arranged at the other end of the reaction chamber 1.

[0035] During the film - forming process, the gate valve 2 is closed to prevent gas exchange between chambers. The gases required for the film - forming process are all supplied by the gas source 6, passed through the intake interface 7 on one side of the reaction chamber 1 into the reaction chamber 1, and then flow along the radial flow channel to the surface of the base 11 for contact reaction. The tail gas is guided by the exhaust assembly 14 at the other end of the reaction chamber 1 and discharged vertically through the exhaust pipeline 15. A rotating motor 13 is installed below the reaction chamber 1, and the base 11 is driven to rotate through the rotating shaft 12. The thermal field heating element 9 is distributed inside the reaction chamber 1, and a heat preservation layer 8 and an isolation layer are installed around the thermal field heating element 9 to separate the thermal field heating element 9 from the reaction area. When the reaction chamber 1 is cooled to the wafer 26 transfer temperature after a single epitaxial growth is completed, the gate valve 2 is opened, and the robotic arm of the vacuum robot 4 extends into the reaction chamber 1 to take out the tray 25 loaded with the wafer 26 and transfer it to the wafer loading chamber 5. After further cooling to room temperature, the cover can be manually opened to take and place the wafer 26.

[0036] In this specific embodiment, at least two intake interfaces 7 are arranged at one end of the reaction chamber 1. One intake interface 7 is connected to the reaction gas flow channel 16 inside the isolation cylinder, and the other is connected to the protection gas flow channel 17 outside the isolation cylinder. The gas source 6 at least includes a reaction gas source 6 and a protection gas source 6, so as to completely isolate the thermal field heating element 9 from the wafer 26 and avoid direct contact to form deposition and adhesion.

[0037] In this specific embodiment, the thermal field heating element 9 includes a front - part heating element 9 - 1, a middle - part heating element 9 - 2, and a rear - part heating element 9 - 3; the front - part heating element 9 - 1 and the rear - part heating element 9 - 3 are respectively arranged at both ends of the middle - part heating element 9 - 2.

[0038] The resistive multi-zone thermal field is placed outside the reaction zone, and the thermal field heating element 9 is separated from the reaction zone by a square isolation tube 10 to form a relatively independent space. The thermal field heating element 9 is installed with an insulation layer 8 and an insulation cover 24 on the periphery of the thermal field heating element 9 to reduce heat loss. The main body of the square isolation tube 10 is made of graphite, and the inner wall can be coated with silicon carbide or tantalum carbide to inhibit the contact and deposition of surface reaction gases. The protective gas is supplied in the same direction as the reaction gas. It enters the protective gas flow channel 17 on one side of the thermal field heating element 9 and passes through the entire thermal field area a before being discharged from the other end, so that the thermal field heating element 9 is in a protective gas atmosphere. During the film formation process, the air pressure in the thermal field area a should be maintained slightly greater than that in the reaction area b, and the reaction gas should be prevented from entering the thermal field heating element 9 through the installation gaps of the components as much as possible. A quartz insulation board 18 is installed at the exhaust end of the reaction chamber 1 to block reaction by-products and reduce the impact of heat transfer in the end area. A cooling jacket 21 is provided between the inner wall 19 of the reaction chamber and the outer wall 20 of the reaction chamber. The distribution of the multi-zone thermal field heating element 9 is as follows Figure 2 As shown, the middle heating element 9-2 and the base 11 are directly opposite to each other as the main heating element for heating the substrate, and the front heating element 9-1, the middle heating element 9-2 and the rear heating element 9-3 are used for auxiliary heating to adjust the temperature on both sides. The front heating element 9-1 is close to the reaction gas flow channel 16 and can also play the function of preheating the intake air. The heat generated by the thermal field heating element 9 is transferred to the square isolation tube 10, and the isolation tube transfers the heat to the base 11 after being evenly heated, which can appropriately improve the temperature uniformity. The thermal field heating elements 9 in multiple zones such as three zones, four zones, and six zones can be reasonably distributed according to the above-mentioned form.

[0039] Embodiment 2:

[0040] This embodiment is an improved embodiment based on the first embodiment. In this specific embodiment, Figures 4 to 8 As shown, the rotating motor 13 can adopt an ordinary rotating motor or a hollow motor 33. When the rotating motor 13 adopts the hollow motor 33, the rotating shaft 12 adopts a hollow rotating shaft 34. The hollow motor 33 is connected to one end of the hollow rotating shaft 34, and the other end of the hollow rotating shaft 34 is connected to the lower base 35. The hollow part of the hollow motor 33 is provided with a rotating air inlet 32, and the rotating air inlet 32 is connected to the air supply mechanism; the hollow rotating shaft 34 is connected to the rotating inlet flow channel 43.

[0041] In a more specific embodiment, the combined base 11 is divided into a rotating body and a tray 25 for loading a wafer 26, such as Figure 3As shown in the figure. There are more than three grooves 45 on the upper surface of the tray 25. When only the tray 25 itself rotates with the base 11, the wafers 26 can be directly placed in the grooves 45, and the surface of the wafers 26 is in the same plane as the surface of the tray 25. The rotating body of the base 11 is fixed to the rotating shaft 12. The rotating shaft 12 passes through the reaction chamber 1 and is connected to the rotating motor 13 on the external fixed seat 31 through the connecting flange 27. Bearings 28 and bearing retaining rings 29 are installed on both sides of the rotating shaft 12. The dynamic seal of the rotating shaft 12 is achieved by the seal 30. Available seals 30 are, for example, magnetic fluids and the like.

[0042] In this specific embodiment, three grooves 45 are provided on the tray 25, and the grooves 45 are used to hold the wafers 26.

[0043] The base 11 includes an upper base 37 and a lower base 35. The upper base 37 is arranged above the lower base 35, and a rotating inlet air flow channel 43 and a rotating outlet air flow channel 44 are arranged between the upper base 37 and the lower base 35; the tray 25 includes a large plate 38 and a small plate 40. A plurality of grooves 45 are provided on the large plate 38, and a small plate 40 is respectively arranged in each groove 45; at least two oblique rotating air holes 42 are arranged in the grooves 45, and the rotating air holes 42 are communicated with the rotating inlet air flow channel 43; the grooves 45 are communicated with the rotating outlet air flow channel 44; a guiding groove 41 is arranged on the bottom surface of the small plate 40; the air flow entering through the rotating inlet air flow channel 43 blows from the rotating air holes 42 to the guiding groove 41 to make the small plate 40 rotate in the groove 45.

[0044] In a more specific embodiment, when the tray 25 rotates in the planetary rotation mode, the wafers 26 also rotate at a certain speed, which can improve the epitaxial uniformity. To ensure that the rotation speeds of the substrates of the wafers 26 are basically the same, the rotating drive gas is introduced from the central position of the base 11 and then evenly dispersed. The base 11 is driven by a hollow motor 33 and a hollow rotating shaft 34. The tray 25 is divided into a small plate 40 and a large plate 38. The rotating drive gas of the wafers 26 is introduced from the rotating air inlet 32 and then passes through the internal rotating inlet air flow channel 43 to the lower part of the small plate 40, driving the small plate 40 to rotate with the air flow. Figure 4 and Figure 6For example, the base 11 is divided into an upper base 37 and a lower base 35 for easy processing. After combination, the air inlet and outlet channels 44 are formed. The groove 45 of the large plate 38 has a stepped structure and a rotor hole 46 is opened at the center for installing the graphite rotor 39. The small plate 40 is placed in the groove 45 of the large plate 38 and the two plates do not directly contact each other. The reserved gap is between 0.01 - 1 mm, preferably 0.1 - 0.5 mm. Two diagonal rotating air holes 42 are opened on both sides of the groove 45. Guide grooves 41 are provided at the corresponding positions at the bottom of the small plate 40 to increase the force-bearing area and guide the air flow. After the air flow sprays out from the rotating air holes 42, it blows towards the guide grooves 41 to drive the small plate 40 to float and rotate around the graphite rotor 39. The rotating air flow below each small plate 40 converges at the confluence port 47 at the center positions of the large plate 38 and the upper base 37 along the outlet channel 44 and is discharged from the lateral air outlet 36 uniformly distributed on the side of the base 11, reducing the influence on the intake of the reaction gas.

[0045] The exhaust mechanism includes an exhaust assembly 14 and an exhaust pipeline 15; a first exhaust port is provided in the middle of the exhaust assembly 14, and a second exhaust port is provided around the first exhaust port on the exhaust assembly 14. The first exhaust port is connected to the reaction gas flow channel 16 inside the isolation cylinder, and the second exhaust port is connected to the protective gas flow channel 17 outside the isolation cylinder. Both the first exhaust port and the second exhaust port are connected to the exhaust pipeline 15.

[0046] More specifically, the intake air flow channel inside the reaction chamber 1 is divided into an intermediate partition 51 and two outer partitions 49. The gas in each partition enters from its respective intake interface 7, is evenly diffused along the flow channel horizontally into the reaction area b after passing through the rectifying plate 53, and small intake through holes are evenly distributed on the surface of the rectifying row. To adapt to the multi-zone intake expansion of the reaction chamber 1 for the epitaxial growth of wafers 26 with different size specifications loaded on the substrate, such as Figure 7 and Figure 8 as shown, the reaction chamber 1 is respectively loaded with a three-piece tray 48 and a six-piece tray 52. A transition zone 50 is introduced on the basis of the intermediate and outer partitions 49 to increase the adjustable intake area, and the reaction gas flow rate, the gas mixing carbon-silicon ratio, and the doping gas ratio in each area can be independently set.

[0047] Embodiment 3:

[0048] This embodiment is an improved embodiment based on Embodiment 1. In this specific embodiment, as Figure 9 shown, without considering factors such as processing difficulty, the equipment can also adopt the form of electromagnetic induction heating; the reaction chamber 1 is a quartz reaction chamber 22, and the electromagnetic induction coil 23 is arranged outside the quartz reaction chamber 22. The external electromagnetic induction coil 23 is one zone or multiple zones, and the other functional components are generally similar. It has the advantages of easy maintenance, fast and efficient, safe and reliable, energy-saving and environmental protection, etc.

[0049] It should be noted that for those skilled in the art, it is obvious that the present utility model is not limited to the details of the above exemplary embodiments, and the present utility model can be implemented in other specific forms without departing from the spirit or basic characteristics of the present utility model. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present utility model is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be embraced within the present utility model, and any reference signs in the claims should not be regarded as limiting the claims involved.

[0050] In this specification, specific examples are used to elaborate on the principles and implementation manners of the present utility model. The description of the above embodiments is only used to help understand the method and its core idea of the present utility model; at the same time, for those of ordinary skill in the art, according to the idea of the present utility model, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present utility model.

Claims

1. A horizontal gas flow multi-sheet chemical vapor deposition device, characterized in that, It includes a reaction chamber, an intake system, an exhaust system, and a handling system; an intake interface is provided on one side of the reaction chamber and is connected to the intake system, and an exhaust interface is provided on the other side of the reaction chamber and is connected to the exhaust system; the intake system adjusts the flow rate and controls the opening and closing of the intake pipeline, and passes the reaction gas into the reaction chamber through the intake interface, and the reaction gas horizontally flows through the surface of the wafer to be deposited and enters the exhaust system; the exhaust system includes a vacuum pump, a vacuum valve, and a pressure control valve that are sequentially connected through an exhaust pipeline; the handling system includes a robot chamber and a wafer loading chamber, a vacuum robot is provided in the robot chamber, and gate valves are respectively provided at both ends of the robot chamber for connecting the wafer loading chamber and the reaction chamber; a thermal field is provided in the reaction chamber, and the thermal field includes an isolation cylinder, a thermal field heating element, and a heat preservation layer, the thermal field heating element is provided outside the isolation cylinder, and the heat preservation layer is provided outside the thermal field heating element; a base is provided inside the isolation cylinder, a tray is provided on the base, and the tray is used to carry the wafer, and the bottom of the base is connected to a rotation motor through a rotation shaft; an exhaust assembly is provided on one side of the reaction chamber close to the exhaust system, and the exhaust assembly is used for guiding the flow direction of the reaction gas to the exhaust system.

2. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 1, characterized in that The thermal field heating element is a graphite heating element; the reaction chamber is a metal reaction chamber; the graphite heating element is arranged inside the reaction chamber, and the graphite heating element includes a front heating element, a middle heating element, and a rear heating element; the front heating element and the rear heating element are respectively arranged at both ends of the middle heating element.

3. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 1, characterized in that, The thermal field heating element is a graphite component arranged inside the reaction chamber; the graphite component generates induced current self-heating under the influence of an electromagnetic induction coil; the reaction chamber is a quartz reaction chamber, the induction coil is arranged outside the quartz reaction chamber, and the induction coil includes a front induction coil, a middle induction coil, and a rear induction coil; the front induction coil and the rear induction coil are respectively arranged at both ends of the middle induction coil.

4. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 1, characterized in that, A plurality of grooves are provided on the tray, and the grooves are used for holding the wafers.

5. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 1, characterized in that, The base includes an upper base and a lower base, the upper base is arranged above the lower base, and a rotation inlet air flow passage and a rotation outlet air flow passage are arranged between the upper base and the lower base; the tray includes a large plate and a small plate, a plurality of grooves are provided on the large plate, and a small plate is respectively arranged in each groove; at least two oblique rotation air holes are provided in the groove, and the rotation air holes are communicated with the rotation inlet air flow passage; the groove is communicated with the rotation outlet air flow passage; a guiding groove is provided on the bottom surface of the small plate; the air flow entering through the rotation inlet air flow passage blows from the rotation air holes to the guiding groove to make the small plate rotate in the groove.

6. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 5, characterized in that, At least three grooves are provided on the large plate.

7. The horizontal gas flow multi-chip chemical vapor deposition equipment according to claim 5, wherein The rotating motor adopts a hollow motor, the rotating shaft adopts a hollow rotating shaft, one end of the hollow motor is connected to one end of the hollow rotating shaft, the other end of the hollow rotating shaft is connected to the lower base, a rotating air inlet is arranged in the hollow part of the hollow motor, and the rotating air inlet is communicated with a gas supply mechanism; the hollow rotating shaft is communicated with the rotating air inlet passage.

8. The horizontal gas flow multi-chip chemical vapor deposition equipment according to claim 1, characterized in that A connecting flange is arranged at the bottom of the reaction chamber, and a fixing seat is arranged at the top of the rotating motor; a sealing member is arranged between the connecting flange and the fixing seat, and a bearing and a bearing retaining ring are arranged between the sealing member and the rotating shaft.

9. The horizontal gas flow multi-sheet chemical vapor deposition apparatus according to claim 1, wherein The exhaust assembly is provided with a plurality of exhaust ports, and the gas is guided and aggregated by the exhaust assembly and enters the exhaust system through an exhaust pipeline; a first exhaust port is arranged in the middle of the exhaust assembly, and a second exhaust port is arranged around the first exhaust port on the exhaust assembly. The first exhaust port is communicated with the reaction gas flow passage inside the isolation cylinder, the second exhaust port is communicated with the protection gas flow passage outside the isolation cylinder, and both the first exhaust port and the second exhaust port are communicated with the exhaust pipeline.

10. The horizontal gas flow multi-sheet chemical vapor deposition equipment according to claim 1, characterized in that, The outer wall of the reaction chamber includes an inner wall of the reaction chamber and an outer wall of the reaction chamber; a cooling jacket is formed between the inner wall of the reaction chamber and the outer wall of the reaction chamber.

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