Crystal growth equipment

Abstract

The utility model discloses crystal growth equipment. The crystal growth equipment comprises a furnace body, a crucible, a heater and a baffle piece, the crucible is arranged in the furnace body, and raw materials used for producing crystals are placed in the crucible. The heater is located between the furnace body and the crucible, the heater is used for heating the crucible and comprises a main heater, two heater supporting legs and two heater feet, the main heater surrounds the peripheral side of the crucible and is located on the upper portion of the crucible, and the two heater supporting legs are oppositely arranged in the radial direction of the crucible; the upper end of each heater supporting leg is connected with the main heater, and a heater foot is arranged at the lower end of each heater supporting leg and located below the crucible; the partition piece is arranged in the furnace body and located below the crucible, at least part of the partition piece is located between the bottom wall of the crucible and the heater foot, and the partition piece is separated from at least one of the crucible and the heater foot. According to the crystal growth equipment disclosed by the embodiment of the utility model, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth, and particularly relates to a crystal growth device. Background Art

[0002] In the related art, during the process of growing single crystal silicon by a crystal growth device, a heater can heat a crucible. When the crucible is in a high-temperature environment, some oxygen will be released from the crucible and enter the silicon melt. An excessive oxygen content in the silicon melt will affect the growth quality of the single crystal silicon.

[0003] In order to avoid the situation that some oxygen is released from the crucible and enters the silicon melt when the heater heats the crucible, thereby affecting the growth quality of the single crystal silicon, in the related art, for example, in a Chinese patent with the publication number of CN116419438A, a hollowed-out area is provided in the heating zone. Specifically, the auxiliary heater includes: a heating zone, and at least a pair of first electrode foot plates distributed oppositely. The heating zone is electrically connected to the electrode through at least a pair of first electrode foot plates. The heating zone is formed by enclosing at least two pairs of circumferential heating petals and at least two U-shaped connecting heating petals distributed oppositely. Inside the heating zone, the area except for at least a pair of first electrode foot plates and at least two U-shaped connecting heating petals distributed oppositely is hollowed out. The hollowed-out area does not use production materials and does not provide heat to the crucible. Then, the heating area at the bottom of the crucible is relatively small, and the precipitation rate of silicon dioxide in the crucible opposite to the hollowed-out area is slower, which can reduce the oxygen content in the single crystal silicon rod.

[0004] This method of reducing the oxygen content mainly reduces the heating area of the heating zone on the bottom of the crucible by setting a hollowed-out area in the heating zone. However, the first electrode foot plates and the U-shaped connecting heating petals can still heat the bottom of the crucible, resulting in an increase in the temperature at the bottom of the crucible, causing oxygen atoms to be released below the crucible, resulting in an excessive oxygen content in the silicon melt, and further affecting the growth quality of the single crystal silicon. Content of the Utility Model

[0005] The utility model aims to at least solve one of the technical problems existing in the prior art. For this reason, an object of the utility model is to provide a crystal growth device. By arranging a partition between the bottom wall of the crucible and the heater foot, the partition can be used to block the heat radiation of the heater foot to the bottom wall of the crucible, so that oxygen atoms in the crucible are not easily released, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

[0006] The crystal growth device according to an embodiment of the present invention includes: a furnace body; a crucible disposed in the furnace body, and a raw material for producing crystals is adapted to be placed in the crucible; a heater disposed in the furnace body and located between the furnace body and the crucible, the heater is used to heat the crucible, the heater includes a main heater, two heater legs and two heater feet, the main heater surrounds the outer peripheral side of the crucible and is located above the crucible, the two heater legs are oppositely arranged along the radial direction of the crucible, the upper end of each heater leg is connected to the main heater, and the lower end of each heater leg is provided with the heater foot, and the heater foot is located below the crucible; a partition member disposed in the furnace body and located below the crucible, at least a part of the partition member is located between the bottom wall of the crucible and the heater foot, the partition member is spaced apart from at least one of the crucible and the heater foot, and the partition member is a high-temperature resistant member.

[0007] The crystal growth device according to an embodiment of the present invention, by providing a partition member between the bottom wall of the crucible and the heater foot, the partition member can be used to block the heat radiation of the heater foot to the bottom wall of the crucible, so that oxygen atoms in the crucible are not easily precipitated, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

[0008] According to some embodiments of the present invention, the partition member includes a first partition portion, the first partition portion is located above the heater foot and between the heater foot and the bottom wall of the crucible, and the projection of the heater foot on the horizontal plane is located within the projection of the first partition portion of the corresponding partition member on the horizontal plane.

[0009] According to some embodiments of the present invention, the partition member includes a first partition portion, the first partition portion is located above the heater foot and between the heater foot and the bottom wall of the crucible, and at least a part of the upper surface of the first partition portion is formed with an avoidance inclined surface for avoiding the crucible.

[0010] According to some alternative embodiments of the present invention, the avoidance inclined surface is an arc surface adapted to the shape of the bottom surface of the crucible.

[0011] According to some alternative embodiments of the present invention, the upper surface of the first partition portion includes a first surface and a second surface, the first surface is connected to the side of the second surface away from the central axis of the crucible, the first surface is a horizontally extending plane, and the second surface constitutes the avoidance inclined surface and extends obliquely downward in the direction from the first surface to the second surface.

[0012] According to some embodiments of the present utility model, the partition member has a fitting cavity, and at least a part of the heater leg is received in the fitting cavity.

[0013] According to some alternative embodiments of the present utility model, a protective bottom plate is provided in the furnace body. The protective bottom plate is located below the crucible, the heater leg is located above the protective bottom plate, and the partition member is located above the protective bottom plate and supported by the protective bottom plate.

[0014] According to some alternative embodiments of the present utility model, the partition member has an avoidance opening communicating with the fitting cavity, and the heater leg is adapted to extend into the fitting cavity through the avoidance opening.

[0015] According to some alternative embodiments of the present utility model, the partition member includes a first partition portion, a second partition portion, and two support legs. The first partition portion is located above the heater leg and between the heater leg and the bottom wall of the crucible. The support legs and the second partition portion are located on opposite sides of the first partition portion and are both connected to the first partition portion. An avoidance opening is defined between the two support legs. The bottom surface of the second partition portion and the bottom surfaces of the two support legs are both supported by the protective bottom plate. The first partition portion, the second partition portion, and the two support legs jointly define the fitting cavity.

[0016] According to some embodiments of the present utility model, the partition member is a silicon carbide member, a graphite member, a graphene member, or a carbon fiber composite member.

[0017] Additional aspects and advantages of the present utility model will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present utility model. Description of the Drawings

[0018] The above and / or additional aspects and advantages of the present utility model will become apparent and be readily understood from the description of the embodiments in conjunction with the following drawings, wherein:

[0019] Figure 1 is a schematic diagram of a crystal growth device according to some embodiments of the present utility model;

[0020] Figure 2 is Figure 1 a perspective view of the partition member in

[0021] Figure 3 is Figure 2 a front view of the partition member in

[0022] Figure 4 is Figure 2 a top view of the partition member in

[0023] Reference numerals:

[0024] 10. Crystal growth equipment;

[0025] 1. Furnace body; 11. Protective bottom plate;

[0026] 2. Crucible; 21. Crucible body; 22. Crucible support; 222. Bottom wall;

[0027] 3. Heater; 31. Main heater; 32. Heater support leg; 33. Heater foot;

[0028] 4. Partition member; 41. First partition portion; 411. First surface; 412. Second surface; 413. Avoidance inclined surface; 42. Second partition portion; 43. Support leg; 44. Fitting cavity; 45. Avoidance opening. Detailed implementation mode

[0029] The embodiments of the present utility model will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present utility model and should not be construed as a limitation of the present utility model.

[0030] Below, refer to Figures 1-4 to describe the crystal growth equipment 10 according to the embodiments of the present utility model.

[0031] The crystal growth equipment 10 according to the embodiments of the present utility model, with reference to Figures 1-4 , the crystal growth equipment 10 includes a furnace body 1, a crucible 2, a heater 3 and a partition member 4. The crucible 2 is arranged in the furnace body 1, and the crucible 2 is suitable for placing raw materials for producing crystals. For example, the raw materials for producing crystals in the crucible 2 can be silicon materials. The crystal growth equipment 10 can be a single crystal growth equipment, and the crystal growth equipment 10 can be used for growing single crystals. For example, it can be used for growing single crystal silicon.

[0032] The heater 3 is provided in the furnace body 1, and the heater 3 is located between the furnace body 1 and the crucible 2. The heater 3 is used to heat the crucible 2. For example, the heater 3 can heat the silicon material in the crucible 2, and the heated silicon raw material can form a silicon melt, and the silicon melt can grow single crystal silicon. The heater 3 includes a main heater 31, two heater legs 32 and two heater feet 33. The main heater 31 surrounds the outer peripheral side of the crucible 2, and the main heater 31 is located above the crucible 2. The two heater legs 32 are arranged oppositely along the radial direction of the crucible 2. The upper end of each heater leg 32 is connected to the main heater 31, and the lower end of each heater leg 32 is provided with a heater foot 33. The heater foot 33 is located below the crucible 2. The heater leg 32 and the heater foot 33 can be integrally formed. The main heater 31 can heat the crucible 2 to facilitate the crystal growth device 10 to grow crystals; the two heater legs 32 and the two heater feet 33 support the main heater 31.

[0033] The baffle 4 is provided in the furnace body 1, and the baffle 4 is located below the crucible 2. At least part of the baffle 4 is located between the bottom wall 222 of the crucible 2 and the heater foot 33. It can be that a part of the baffle 4 is located between the bottom wall 222 of the crucible 2 and the heater foot 33, or the entire baffle 4 is located between the bottom wall 222 of the crucible 2 and the heater foot 33. The baffle 4 is spaced apart from at least one of the crucible 2 and the heater foot 33. It can be that the baffle 4 is spaced apart from the crucible 2 and the baffle 4 abuts against the heater foot 33; or the baffle 4 is spaced apart from the heater foot 33 and the baffle 4 abuts against the crucible 2; or the baffle 4 is spaced apart from the crucible 2 and the baffle 4 is spaced apart from the heater foot 33. The temperature of the heater foot 33 is relatively high during heating, and the baffle 4 is a high-temperature resistant part, which can prevent the baffle 4 from deforming at high temperature and ensure the structural strength of the baffle 4. The number of the baffles 4 can be set to two, and the two baffles 4 are respectively located between the two heater feet 33 and the bottom wall 222 of the crucible 2. The baffle 4 can be used to block the heat radiation of the heater foot 33 to the bottom wall 222 of the crucible 2.

[0034] During the process of growing a crystal in the crystal growth apparatus 10, the heater 3 can heat the crucible 2. Since the crucible 2 is in a high-temperature environment, some oxygen will dissolve into the silicon melt in the crucible 2. An excessive oxygen content in the silicon melt will affect the quality of crystal growth. The main heater 31 can heat the crucible 2 to facilitate crystal growth in the crystal growth apparatus 10. The two heater legs 32 and the two heater feet 33 support the main heater 31. The two heater feet 33 emit thermal radiation below the crucible 2, causing the temperature of the crucible 2 to rise, resulting in the precipitation of oxygen atoms below the crucible 2, leading to an excessive oxygen content in the silicon melt and thus affecting the quality of crystal growth. By providing a barrier member 4 between the bottom wall 222 of the crucible 2 and the heater feet 33, the barrier member 4 can block the heat radiation from the heater feet 33 to the bottom wall 222 of the crucible 2, making it difficult for oxygen atoms in the crucible 2 to precipitate, reducing the oxygen content in the crystal, and ensuring the quality of crystal growth.

[0035] According to the crystal growth apparatus 10 of an embodiment of the present invention, by providing a barrier member 4 between the bottom wall 222 of the crucible 2 and the heater feet 33, the barrier member 4 can block the heat radiation from the heater feet 33 to the bottom wall 222 of the crucible 2, making it difficult for oxygen atoms in the crucible 2 to precipitate, reducing the oxygen content in the crystal, and ensuring the quality of crystal production.

[0036] According to some embodiments of the present invention, with reference to Figure 1 , the barrier member 4 includes a first barrier portion 41. The first barrier portion 41 is located above the heater feet 33 and between the heater feet 33 and the bottom wall 222 of the crucible 2. The projection of the heater feet 33 on the horizontal plane is located within the projection of the corresponding first barrier portion 41 of the barrier member 4 on the horizontal plane. In the vertical direction, the first barrier portion 41 can completely block the heater feet 33, making it difficult for the heat of the heater feet 33 to radiate below the crucible 2.

[0037] According to some embodiments of the present invention, with reference to Figure 1, the partition member 4 includes a first partition portion 41. The first partition portion 41 is located above the heater leg 33 and between the heater leg 33 and the bottom wall 222 of the crucible 2. At least a part of the upper surface of the first partition portion 41 is formed with an avoidance inclined surface 413 for avoiding the crucible 2. It can be that a part of the upper surface of the first partition portion 41 is formed with the avoidance inclined surface 413 for avoiding the crucible 2; or the entire upper surface of the first partition portion 41 is formed with the avoidance inclined surface 413 for avoiding the crucible 2. For example, the crucible 2 may include a crucible 2 body and a crucible support 22, and the crucible support 22 may be wrapped around the outer peripheral side of the crucible 2 body. When the crystal growth device 10 is working, the crucible 2 can move up and down. By providing the avoidance inclined surface 413 on the upper surface of the first partition portion 41, it can be avoided that the bottom surface of the crucible support 22 contacts the upper surface of the first partition portion 41, the crucible 2 can be prevented from colliding with the first partition portion 41, and at the same time, the heat of the heater leg 33 can be prevented from being transferred to the crucible 2 through the first partition portion 41.

[0038] According to some alternative embodiments of the present invention, referring to Figures 1-4 , the avoidance inclined surface 413 is an arc surface, and the arc surface is adapted to the bottom surface shape of the crucible 2. For example, the crucible 2 may include a crucible 2 body and a crucible support 22, and the crucible support 22 may be wrapped around the outer peripheral side of the crucible 2 body. The avoidance inclined surface 413 may be adapted to the bottom surface shape of the crucible support 22, which can further prevent the bottom surface of the crucible support 22 from contacting the avoidance inclined surface 413, prevent the crucible 2 from colliding with the first partition portion 41, and prevent the heat of the heater leg 33 from being transferred to the crucible 2 through the first partition portion 41.

[0039] According to some alternative embodiments of the present invention, referring to Figures 1-4 , the upper surface of the first partition portion 41 includes a first surface 411 and a second surface 412. The first surface 411 is connected to the side of the second surface 412 away from the central axis of the crucible 2. The first surface 411 is a horizontally extending plane, and the second surface 412 forms the avoidance inclined surface 413 and extends obliquely downward in the direction from the first surface 411 to the second surface 412. By setting the upper surface of the first partition portion 41 as the first surface 411 and the second surface 412, the first partition portion 41 can better block the heat radiation of the heater leg 33 to the bottom wall 222 of the crucible 2, and the crucible 2 can be prevented from colliding with the first partition portion 41.

[0040] According to some embodiments of the present invention, referring to Figures 1-4 , the partition member 4 has a fitting cavity 44, and at least a part of the heater leg 33 is received in the fitting cavity 44. It can be that a part of the heater leg 33 is received in the fitting cavity 44, or the entire heater leg 33 is received in the fitting cavity 44, which can enable the partition member 4 to block as much heat radiation of the heater leg 33 to the bottom wall 222 of the crucible 2 as possible.

[0041] According to some alternative embodiments of the present utility model, with reference to Figures 1-4 , a protective bottom plate 11 is provided in the furnace body 1. The protective bottom plate 11 is located below the crucible 2, the heater feet 33 are located above the protective bottom plate 11, the partition member 4 is located above the protective bottom plate 11, and the partition member 4 is supported by the protective bottom plate 11. Placing the partition member 4 on the protective bottom plate 11 can make the installation method of the partition member 4 simple and easy to operate.

[0042] According to some alternative embodiments of the present utility model, with reference to Figures 1-4 , the partition member 4 has an avoidance opening 45, the avoidance opening 45 communicates with the fitting cavity 44, and the heater feet 33 are adapted to extend into the fitting cavity 44 through the avoidance opening 45. After installing the partition member 4 onto the protective bottom plate 11, the heater legs 32 can extend into the fitting cavity 44 through the avoidance opening 45. After the installation is completed, the heater legs 32 can be received in the avoidance opening 45, and the heater legs 32 can cooperate with the avoidance opening 45 of the partition member 4 to prevent the partition member 4 from moving.

[0043] According to some alternative embodiments of the present utility model, with reference to Figures 1-4 , the partition member 4 includes a first partition portion 41, a second partition portion 42, and two support legs 43. The first partition portion 41 is located above the heater feet 33 and between the heater feet 33 and the bottom wall 222 of the crucible 2. The support legs 43 and the second partition portion 42 are located on opposite sides of the first partition portion 41, and both the support legs 43 and the second partition portion 42 are connected to the first partition portion 41. An avoidance opening 45 is defined between the two support legs 43. The bottom surface of the second partition portion 42 and the bottom surfaces of the two support legs 43 are both supported by the protective bottom plate 11. The first partition portion 41, the second partition portion 42, and the two support legs 43 together define a fitting cavity 44, and the heater feet 33 are received in the fitting cavity 44.

[0044] After installing the partition member 4 onto the protective bottom plate 11, the heater feet 33 can extend into the fitting cavity 44 through the avoidance opening 45. The bottom surface of the second partition portion 42 and the bottom surfaces of the two support legs 43 are both supported by the protective bottom plate 11. The first partition portion 41 and the second partition portion 42 can block the heat radiation of the heater feet 33 to the bottom wall 222 of the crucible 2. By configuring the partition member 4 to include the first partition portion 41, the second partition portion 42, and the two support legs 43, the design structure of the partition member 4 can be made simple and convenient for installation.

[0045] According to some embodiments of the present utility model, the partition member 4 is a silicon carbide member, a graphite member, a graphene member or a carbon fiber composite member, and the above materials are all high-temperature resistant members. When the heater leg 33 is heated, the temperature of the heater leg 33 is relatively high. Since the partition member 4 is a high-temperature resistant member, it can prevent the partition member 4 from deforming at high temperatures and can ensure the structural strength of the partition member 4.

[0046] In the description of this specification, the descriptions with reference to terms such as "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0047] Although the embodiments of the present utility model have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.

Claims

1. A crystal growth device, characterized in that, Comprising: A furnace body; A crucible, which is arranged inside the furnace body, and raw materials for crystal production are adapted to be placed inside the crucible; A heater, which is arranged inside the furnace body and located between the furnace body and the crucible, and the heater is used to heat the crucible. The heater includes a main heater, two heater legs and two heater feet. The main heater surrounds the outer peripheral side of the crucible and is located above the crucible. The two heater legs are arranged oppositely along the radial direction of the crucible. The upper end of each heater leg is connected to the main heater, and the lower end of each heater leg is provided with the heater foot, and the heater foot is located below the crucible; A partition member, which is arranged inside the furnace body and located below the crucible. At least part of the partition member is located between the bottom wall of the crucible and the heater foot. The partition member is spaced apart from at least one of the crucible and the heater foot, and the partition member is a high-temperature resistant member; the partition member includes a first partition portion, and the first partition portion is located above the heater foot and between the heater foot and the bottom wall of the crucible.

2. The crystal growth device according to claim 1, wherein The projection of the heater foot on the horizontal plane is located within the projection of the first partition portion of the corresponding partition member on the horizontal plane.

3. The crystal growth apparatus according to claim 1, wherein At least part of the upper surface of the first partition portion is formed with an avoidance inclined surface for avoiding the crucible.

4. The crystal growth device according to claim 3, wherein The avoidance inclined surface is an arc surface adapted to the bottom surface shape of the crucible.

5. The crystal growth apparatus according to claim 3, wherein The upper surface of the first partition portion includes a first surface and a second surface. The first surface is connected to the side of the second surface away from the central axis of the crucible. The first surface is a horizontally extending plane, and the second surface constitutes the avoidance inclined surface and extends obliquely downward in the direction from the first surface to the second surface.

6. The crystal growth apparatus according to claim 1, wherein, The partition member has a fitting cavity, and at least part of the heater foot is received in the fitting cavity.

7. The crystal growth apparatus according to claim 6, wherein A protective bottom plate is arranged inside the furnace body. The protective bottom plate is located below the crucible. The heater foot is located above the protective bottom plate, and the partition member is located above the protective bottom plate and supported by the protective bottom plate.

8. The crystal growth apparatus according to claim 7, characterized in that, The partition member has an avoidance opening communicating with the fitting cavity, and the heater foot is adapted to extend into the fitting cavity through the avoidance opening.

9. The crystal growth apparatus according to claim 8, wherein, The partition member includes a first partition portion, a second partition portion and two support legs. The first partition portion is located above the heater foot and between the heater foot and the bottom wall of the crucible. The support legs and the second partition portion are located on opposite sides of the first partition portion and are both connected to the first partition portion. The avoidance opening is defined between the two support legs. The bottom surface of the second partition portion and the bottom surfaces of the two support legs are both supported by the protective bottom plate. The first partition portion, the second partition portion and the two support legs jointly define the fitting cavity.

10. The crystal growth apparatus according to any one of claims 1-9, characterized in that, The partition member is a silicon carbide member, a graphite member, a graphene member or a carbon fiber composite member.

Images