Wafer rotating workpiece disc
By designing a wafer rotating workpiece disk to achieve the rotation and revolution of the wafer, the problem of insufficient coating uniformity in the prior art is solved, and the uniformity and production capacity of the coating process are improved.
Patent Information
- Application Number
- CN202422463038.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-11
- Publication Date
- 2025-07-25
- Estimated Expiration
- 2034-10-11
AI Technical Summary
The existing rotary workpiece disk has a simple structure and is difficult to further improve the uniformity of wafer coating.
A wafer rotating workpiece disk is designed, which can carry multiple wafers at the same time and drive the wafer base to rotate through the airflow, realizing the wafer rotation and revolution and enhancing contact with process gas.
It improves the uniformity and production capacity of the coating process, ensures that the wafer can better contact with the process gas during the coating process, and improves the coating uniformity.
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Figure CN223150639U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor processing equipment, and more specifically, to a wafer rotating workpiece tray. Background Art
[0002] A wafer is an important raw material for manufacturing semiconductor components. The wafer coating process is a key technology in the wafer manufacturing process, which involves uniformly depositing one or more thin film materials on the surface of the wafer. During the wafer coating process, the rotating workpiece tray is one of the key components to achieve uniform wafer coating.
[0003] The traditional wafer coating rotating workpiece tray usually consists of a central shaft and a rotating disk body, and the wafer is placed on the rotating disk body. During the coating process, the rotating disk body rotates at a certain speed to promote the uniform distribution of the coating material on the surface of the wafer.
[0004] The existing rotating workpiece tray has a simple structure and a single rotation mode, making it difficult to further improve the uniformity of wafer coating. Therefore, it is necessary to provide a new wafer rotating workpiece tray. Summary of the Utility Model
[0005] In view of this, the purpose of the utility model is to provide a wafer rotating workpiece tray, which can carry multiple wafers at the same time, and can realize the self-rotation and revolution of the wafers, thereby improving the uniformity of the coating process.
[0006] To achieve the above purpose, the technical solution of the utility model is as follows:
[0007] A wafer rotating workpiece tray, comprising:
[0008] A rotatable workpiece chassis, on the upper end surface of which a plurality of grooves are circumferentially spaced apart. An air inlet hole and an air outlet hole are formed on the side wall of each groove; a total air inlet is arranged at the bottom of the workpiece chassis, and an air passage for communicating the total air inlet with the air inlet hole corresponding to the groove is further formed inside the workpiece chassis;
[0009] A wafer pedestal, which is movably placed in the groove. A circumferentially extending stepped portion is further formed on the inner side wall of the groove. A circumferentially extending upper flange and a lower flange are formed at the edge of the wafer pedestal. A circumferentially extending annular groove is formed between the upper flange and the lower flange of the wafer pedestal; when the wafer pedestal is placed in the groove, the bottom of the upper flange is in contact with the stepped portion, and the air inlet hole and the air outlet hole are located between the upper flange and the lower flange. External gas sequentially enters the annular groove through the total air inlet, the air passage and the air inlet hole and is discharged through the air outlet hole, thereby driving the wafer pedestal to rotate.
[0010] Further, at least one annular ball groove is formed at the bottom of the wafer base, at least one annular protrusion is correspondingly formed at the bottom of the groove, a plurality of balls are placed between the protrusion and the side wall of the ball groove, and the bottom of the ball groove can be in contact with the balls.
[0011] Further, a plurality of retaining plates located in an annular groove are circumferentially and spaced apart along the circumferential side wall of the wafer base.
[0012] Further, the plane where the retaining plate is located does not pass through the center of the wafer base.
[0013] Further, the extension line of one end of the air passage does not pass through the center of the workpiece chassis, and the extension line of the other end does not pass through the center of the wafer base.
[0014] Further, a concave pit for placing a wafer is formed on the upper end surface of the wafer base.
[0015] Further, a through hole is formed at the center of the bottom of the groove.
[0016] Further, a plurality of thimble holes are formed at positions corresponding to the through holes on the wafer base and are distributed circumferentially around the center of the wafer base, and thimbles are arranged in the thimble holes.
[0017] Further, a connecting plate is connected to the center of the bottom of the workpiece chassis, and the total air inlet is opened at the center of the connecting plate.
[0018] The beneficial effects of the present utility model are as follows:
[0019] The wafer rotating workpiece disk provided by the present utility model places the wafer to be processed on the wafer base, and then the bottom of the workpiece chassis can drive its rotation by being connected to an external rotation drive, thereby realizing the revolution of the wafer; at the same time, by connecting the total air inlet to an external air source, the external air source enters the annular groove through the total air inlet, the air passage and the air inlet holes and is discharged through the exhaust holes, thereby driving the wafer base to rotate and enabling the wafer to rotate; multiple wafers can be placed on each workpiece chassis at the same time, thereby realizing the revolution and rotation of multiple wafers; on the basis of achieving higher production capacity, the wafer can better contact with the process gas during the process, thereby improving the process uniformity, that is, the coating uniformity. Description of the Drawings
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present application, and those of ordinary skill in the art can also obtain other embodiments according to these drawings.
[0021] Figure 1 It is a schematic diagram of the overall structure of the present utility model (a wafer base is omitted).
[0022] Figure 2 It is a schematic diagram of the structure at the groove of the workpiece chassis in the present utility model.
[0023] Figure 3 It is a schematic diagram of the bottom structure of the present utility model.
[0024] Figure 4 It is a schematic diagram of the top-down perspective structure in the present utility model.
[0025] Figure 5 It is a schematic diagram of the three-dimensional structure of the wafer base in the present utility model.
[0026] Figure 6 It is a schematic diagram of the sectional structure of the wafer base in the present utility model.
[0027] Description of reference numerals:
[0028] 1. Wafer base; 11. Retaining plate; 12. Ejector pin hole; 13. Pit; 14. Ball groove; 15. Upper flange; 16. Lower flange; 17. Annular groove;
[0029] 2. Ejector pin;
[0030] 3. Ball;
[0031] 4. Workpiece chassis; 41. Groove; 42. Connecting plate; 43. Air channel; 44. Air inlet hole; 45. Protrusion; 46. Exhaust hole; 47. Total air inlet; 48. Step portion; 49. Through hole. Detailed implementation manners
[0032] The structure provided by the present utility model will be explained and described in detail below with reference to the accompanying drawings of the specification.
[0033] Refer to Figures 1 to 6 As shown, this embodiment specifically discloses a wafer rotating workpiece disk, including:
[0034] A rotatable workpiece chassis 4, which can be directly connected to the output shaft of an external rotating drive member such as a motor, is used to drive the workpiece chassis 4 to rotate. A plurality of grooves 41 for placing the wafer base 1 are circumferentially spaced on the upper end surface of the workpiece chassis 4. In the illustrated embodiment, there are 6 arranged in a central circumferential array; air inlet holes 44 and exhaust holes 46 are opened on the side walls of each groove 41; the air inlet holes 44 and the exhaust holes 46 are generally arranged opposite to each other to increase the flow path of the air flow. A total air inlet 47 is provided at the bottom of the workpiece chassis 4 for communicating with an external air source. An air channel 43 for communicating the total air inlet 47 with the air inlet holes 44 of the corresponding grooves 41 is also opened inside the workpiece chassis 4;
[0035] The wafer base 1 is movably placed in the groove 41. A circumferentially extending stepped portion 48 is further formed on the inner side wall of the groove 41. A circumferentially extending upper flange 15 and a lower flange 16 are formed at the edge of the wafer base 1. A circumferentially extending annular groove 17 is formed between the upper flange 15 and the lower flange 16 of the wafer base 1. When the wafer base 1 is placed in the groove 41, the bottom of the upper flange 15 is in contact with the stepped portion 48, thereby reducing the escape of gas from the upper part of the groove 41 and reducing the disturbance of the process gas above the wafer by the gas. The air inlet hole 44 and the exhaust hole 46 are located between the upper flange 15 and the lower flange 16. External gas sequentially enters the annular groove 17 through the main air inlet 47, the air passage 43, and the air inlet hole 44 and is discharged through the exhaust hole 46, thereby driving the rotation of the wafer base 1.
[0036] It should be noted that when the exhaust hole 46 is not blocked, the gas entering the annular groove 17 can basically be discharged from the exhaust hole 46 without passing above the wafer.
[0037] In this embodiment, the wafer to be processed is placed on the wafer base 1. Then, the bottom of the workpiece chassis 4 can be driven to rotate by being connected to an external rotary drive, thereby realizing the revolution of the wafer. At the same time, by connecting the main air inlet to an external gas source, the external gas source enters the annular groove 17 through the main air inlet 47, the air passage 43, and the air inlet hole 44 and is discharged through the exhaust hole 46. During this process, a relatively stable air flow can be formed, thereby driving the rotation of the wafer base 1 and causing the wafer placed on the wafer base 1 to rotate. Multiple wafers can be placed on each workpiece chassis 4 at the same time, thereby realizing the revolution and rotation of multiple wafers. On the basis of achieving higher production capacity, the wafer can better contact the process gas during the process, thereby improving the process uniformity, that is, the coating uniformity.
[0038] In this embodiment, to facilitate the machining of the air passage 43 inside the workpiece chassis 4, a central groove can be directly formed at the center of the bottom of the workpiece chassis 4 first, and then the air passage 43 is machined obliquely outward along the outer side wall of the central groove. Then, a connecting plate 42 is installed and connected at the central groove. At this time, the main air inlet 47 is opened at the center of the connecting plate 42, and at the same time, the external rotary drive member is directly connected to the connecting plate 42. The connection between the connecting plate 42 and the workpiece chassis 4 can be directly welded and fixed, or detachably connected and fixed by a plurality of screws.
[0039] Continue to refer to Figure 1 and Figure 2As shown, at least one annular ball groove 14 is formed at the bottom of the wafer base 1. In the illustrated embodiment, two ball grooves 14 are provided. Two annular protrusions 45 are correspondingly formed at the bottom of the groove 41. One protrusion 45 extends into a corresponding ball groove 14. At this time, an annular gap space is formed between the side wall of the protrusion 45 and the side wall of the ball groove 14. A ring of balls 3 is placed in this gap space. The bottom of the ball groove 14 can be in contact with the balls 3; this makes the contact between the wafer base 1 and the workpiece chassis 4 become multi-point contact, reducing the resistance of rotation. By controlling the gas flow rate, the rotation speed of the wafer base 1 can be adjusted.
[0040] Further, referring to Figure 5 As shown, in some embodiments, a plurality of baffles 11 located in the annular groove 17 are circumferentially and spaced apart along the circumferential side wall of the wafer base 1. The airflow entering through the air inlet hole 44 can directly blow onto the baffles 11, thereby increasing the driving force on the wafer base 1; in some other embodiments, a plurality of inclined grooves can also be directly and circumferentially spaced apart along the circumferential side wall of the wafer base 1, which can achieve a similar effect.
[0041] To further increase the driving force of the airflow and avoid the situation of directly blowing and jamming the wafer base 1, the plane where the baffle 11 is located does not pass through the center of the wafer base 1; the extension line of one end of the air passage 43 does not pass through the center of the workpiece chassis 4, and the extension line of the other end does not pass through the center of the wafer base 1; this can make the self-rotation of the wafer base 1 more smooth.
[0042] Continuing to refer to Figure 5 and Figure 6 As shown, a concave pit 13 for placing the wafer is formed on the upper end surface of the wafer base 1, which can better place the wafer, avoid the wafer from shaking randomly during the process of self-rotation and revolution, and ensure the uniformity of the process coating.
[0043] In some embodiments, a through hole 49 is formed at the center of the bottom of the groove 41, so as to facilitate the output end of the external lifting mechanism to extend into the groove 41 through the through hole 49 to perform the lifting operation on the wafer base, that is, to lift the wafer and realize the loading and unloading of the wafer.
[0044] Specifically, a plurality of thimble holes 12 are formed at the position corresponding to the through hole 49 on the wafer base 1 and are circumferentially distributed along the center of the wafer base 1. Thimbles 2 are arranged in the thimble holes 12. The external lifting mechanism drives the wafer to be lifted by synchronously lifting a plurality of thimbles 2, thereby realizing the loading and unloading of the wafer, and the lifting process is more balanced and stable.
[0045] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present utility model.
[0046] In the present utility model, unless otherwise clearly defined and limited, terms such as "installation", "connection", "connection", "fixation", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0047] In the description of this specification, the descriptions referring to terms such as "this embodiment", "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any at least one embodiment or example. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.
[0048] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of the features. In the description of the present utility model, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0049] The above are only the preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent replacements, and simple improvements made to the substantial content of the present utility model should be included in the protection scope of the present utility model.
Claims
1. A wafer rotating workpiece chuck, characterized in that, Including: A rotatable workpiece chassis (4), on the upper end surface of which a plurality of grooves (41) are circumferentially spaced apart, and an air inlet hole (44) and an air outlet hole (46) are formed on the side wall of each groove (41); a total air inlet (47) is provided at the bottom of the workpiece chassis (4), and an air passage (43) for connecting the total air inlet (47) and the air inlet hole (44) of the corresponding groove (41) is further formed inside the workpiece chassis (4); A wafer pedestal (1), which is movably placed in the groove (41), a circumferentially extending step portion (48) is further formed on the inner side wall of the groove (41), a circumferentially extending upper flange (15) and a lower flange (16) are formed at the edge of the wafer pedestal (1), and a circumferentially extending annular groove (17) is formed between the upper flange (15) and the lower flange (16) of the wafer pedestal (1); when the wafer pedestal (1) is placed in the groove (41), the bottom of the upper flange (15) is in contact with the step portion (48), and the air inlet hole (44) and the air outlet hole (46) are located between the upper flange (15) and the lower flange (16), and external gas sequentially enters the annular groove (17) through the total air inlet (47), the air passage (43) and the air inlet hole (44) and is discharged through the air outlet hole (46), thereby driving the wafer pedestal (1) to rotate.
2. The wafer rotating workpiece disk according to claim 1, wherein At least one annular ball groove (14) is formed at the bottom of the wafer pedestal (1), at least one annular protrusion (45) is correspondingly formed at the bottom of the groove (41), and a plurality of balls (3) are placed between the side wall of the protrusion (45) and the ball groove (14), and the bottom of the ball groove (14) can be in contact with the balls (3).
3. The wafer rotating workpiece chuck according to claim 1, wherein, A plurality of baffles (11) located in the annular groove (17) are circumferentially distributed along the circumferential side wall of the wafer pedestal (1).
4. The wafer rotating workpiece disk according to claim 3, characterized in that, The plane where the baffle (11) is located does not pass through the center of the wafer pedestal (1).
5. The wafer rotating workpiece chuck according to claim 1, characterized in that, The extension line of one end of the air passage (43) does not pass through the center of the workpiece chassis (4), and the extension line of the other end does not pass through the center of the wafer pedestal (1).
6. The wafer rotating workpiece chuck according to claim 1, wherein, A concave pit (13) for placing a wafer is formed on the upper end surface of the wafer pedestal (1).
7. The wafer rotating workpiece chuck according to claim 1, wherein, A through hole (49) is formed at the center of the bottom of the groove (41).
8. The wafer rotating workpiece disk according to claim 7, wherein At the position corresponding to the through hole (49) on the wafer pedestal (1), a plurality of thimble holes (12) circumferentially distributed along the center of the wafer pedestal (1) are formed, and thimbles (2) are arranged in the thimble holes (12).
9. The wafer rotating workpiece chuck according to claim 1, wherein A connecting plate (42) is connected to the center of the bottom of the workpiece chassis (4), and the total air inlet (47) is formed at the center of the connecting plate (42).
Citation Information
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