Semiconductor device
By designing the upper surface of the heating disk is smaller than the wafer size and combining isolation components and plasma devices, the polymer removal problem of the wafer back edge and side is solved, and efficient polymer removal and production efficiency are achieved.
Patent Information
- Application Number
- CN202421990752.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2025-07-25
- Estimated Expiration
- 2034-08-15
AI Technical Summary
In the prior art, the back edge and side polymer of the wafer is difficult to effectively remove, resulting in metal corrosion, and the traditional heating disk design leads to a high risk of polymer diffusion, affecting production efficiency.
Design the upper surface of the heating disk to be smaller than the wafer size, combining the isolation components and plasma emitting devices to ensure that the reaction gas is in full contact with the back edge and side polymer and avoid metal corrosion.
It realizes effective removal of the back edge and side polymer of the wafer, avoids metal corrosion, improves production efficiency, reduces equipment alarms, and shortens process time.
Smart Images
Figure CN223155984U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and particularly to a semiconductor device. Background Art
[0002] In the process of semiconductor metal etching, the reaction gas can react with the metal to achieve etching. After the etching is completed, there will be residues of photoresist on the front, side, and back of the wafer, and then polymers will be formed to corrode the metal, causing defects to the metal. For example, when etching metal aluminum on a wafer, a reaction gas containing chlorine elements is often used for etching, so that polymers containing chlorine elements are formed on the surface and side of the wafer. The chlorine element therein will react with water in the air to generate hydrochloric acid, which will corrode the metal aluminum. Therefore, it is necessary to remove the polymers attached to the wafer in a timely manner.
[0003] The photoresist polymer on the front of the wafer can be easily removed, but the photoresist polymers on the side and back edge regions of the wafer are difficult to remove. The chlorine-containing photoresist polymer on the side of the wafer will corrode the metal aluminum, and the polymer in the back edge region of the wafer will fall onto the next wafer, thus corroding the next wafer. Therefore, removing the chlorine-containing photoresist polymers on the side and back edge regions of the wafer is a huge challenge.
[0004] In the related art, the wafer is usually placed on a heating plate to remove the polymer. However, the diameter of the traditional heating plate is larger than the diameter of the wafer, which results in the polymer in the back edge region being difficult to expose. Therefore, when removing the polymer, a thimble on the heating plate is needed to support the wafer to expose the polymer. At this time, there is a certain risk that the polymer will move and spread to the middle position of the back, and the polymer removal effect is not good, which will cause serious corrosion to the metal on the wafer. Summary of the Utility Model
[0005] In view of this, the purpose of this application is to provide a semiconductor device that can successfully remove the polymer in the back edge region and the polymer on the side of the wafer, and avoid corroding the metal on the wafer. The specific scheme is as follows:
[0006] This application provides a semiconductor device, including:
[0007] A heating plate and a base located in the first chamber. The heating plate is located above the base. The base is used to support the heating plate, and the heating plate is used to place the wafer;
[0008] The upper surface of the heating plate is close to the wafer, and the size of the upper surface is smaller than the size of the wafer.
[0009] Specifically, the semiconductor device further includes:
[0010] An isolation component located above the base; the isolation component includes a first part, the size of the base is larger than the size of the wafer, and in the horizontal direction, the first part is located between the edge of the wafer and the edge of the base, and the heating plate is located within the area surrounded by the first part.
[0011] Specifically, the isolation component further includes a second part located above the first part, the second part extends along the horizontal direction, and the size of the area surrounded by the second part is smaller than the size of the area surrounded by the first part;
[0012] There is a first distance between the upper surface of the wafer and the upper surface of the base, and there is a second distance between the lower surface of the second part and the upper surface of the base, and the second distance is greater than the first distance.
[0013] Specifically, the first part moves in the vertical direction.
[0014] Specifically, the side surface of the heating plate is an inclined surface or a convex surface.
[0015] Specifically, the size of the lower surface of the heating plate is larger than the size of the wafer.
[0016] Specifically, the semiconductor device further includes:
[0017] An opening located on the side wall of the first chamber, and the opening is used to transfer the wafer.
[0018] Specifically, during the etching process, the upper surface of the first part is at a first height, and the first height is greater than the first distance between the upper surface of the wafer and the upper surface of the base;
[0019] After the etching process is completed, the upper surface of the first part is at a second height, and the second height is less than the third distance in the longitudinal direction between the opening and the upper surface of the base, and the first height is greater than the second height.
[0020] Specifically, the semiconductor device further includes:
[0021] A plasma emission device located within the first chamber and disposed opposite to the heating plate, for emitting plasma into the first chamber.
[0022] Specifically, the semiconductor device further includes:
[0023] A vacuum transfer platform communicating with the first chamber, and at least one second chamber communicating with the vacuum transfer platform;
[0024] The vacuum transfer platform is equipped with a robotic arm for transferring the wafer between the first chamber and the second chamber.
[0025] An embodiment of the present application provides a semiconductor device, including a heating plate and a base located in a first chamber. The heating plate is located above the base, and the base is used to support the heating plate. The heating plate is used to place the wafer. The upper surface of the heating plate is close to the wafer, and the size of the upper surface is smaller than the size of the wafer. In the present application, by setting the size of the upper surface of the heating plate to be smaller than the size of the wafer, in this way, when the wafer is placed on the heating plate, the back edge area of the wafer can be exposed, so that the reaction gas can more fully contact the polymer located in the back edge area, thereby successfully removing the polymer in the back edge area and the polymer on the side of the wafer, and avoiding corrosion of the metal on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0027] Figure 1 Shows a schematic structural diagram of a heating plate in the related art;
[0028] Figures 2-4 Shows a schematic cross-sectional view of a semiconductor device provided by an embodiment of the present application;
[0029] Figure 5 Shows a top view of a heating plate provided by an embodiment of the present application;
[0030] Figure 6 Shows a schematic cross-sectional view of a semiconductor device provided by an embodiment of the present application;
[0031] Figure 7 Shows a top view of another heating plate provided by an embodiment of the present application;
[0032] Figure 8 Shows a schematic cross-sectional view of a semiconductor device provided by an embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0033] To make the above objects, features, and advantages of the present application more clearly understandable, the following will give a detailed description of the specific embodiments of the present application in conjunction with the drawings.
[0034] In the following description, numerous specific details are set forth to provide a thorough understanding of the present application. However, the present application may be implemented in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the spirit of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0035] Secondly, the present application will be described in detail in conjunction with the schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional views showing the device structure will be enlarged locally out of proportion, and the schematic diagrams are only examples and should not limit the scope of protection of the present application herein. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.
[0036] As described in the background art, in the related art, a wafer is usually placed on a heating plate to remove polymers. However, the diameter of the traditional heating plate is larger than the diameter of the wafer, which results in the polymers in the back edge area being difficult to be exposed. Therefore, when removing the polymers, a lift pin on the heating plate is needed to support the wafer to expose the polymers. At this time, there is a certain risk that the polymers will move and spread to the middle position of the back, and the polymer removal effect is not good, which will cause serious corrosion to the metal on the wafer.
[0037] Reference Figure 1 As shown, it is a schematic structural diagram of a heating plate in the related art. In (a), the wafer 101 can be placed on the heating plate 102, and the diameter of the heating plate 102 is larger than the diameter of the wafer 101. When removing the polymers, as shown in (b), the wafer 101 is supported by the lift pin 103 on the heating plate 102 so that the polymers 104 attached to the wafer 101 are exposed, so that the free radicals of the reaction gas can contact the polymers 104 more fully to remove the polymers 104.
[0038] However, in this way, when the wafer 101 is supported by the lift pin 103, since there is a large gap between the wafer 101 and the heating plate 101, when using the reaction gas to remove the polymers, the polymers located at the back edge position are likely to be blown to the middle position of the back by the reaction gas and continue to remain. In addition, when a large number of wafers are transferred back to the wafer transfer cassette after the process is completed, the polymers remaining at the middle position of the back of the wafer are likely to fall off and land on the surface of the next wafer, thus causing corrosion to the metal on the next wafer.
[0039] Based on the above technical problems, an embodiment of the present application provides a semiconductor device, including a heating plate and a base located in a first chamber. The heating plate is located above the base, and the base is used to support the heating plate. The heating plate is used to place a wafer. The upper surface of the heating plate is close to the wafer, and the size of the upper surface is smaller than the size of the wafer. In the present application, by setting the size of the upper surface of the heating plate to be smaller than the size of the wafer, when the wafer is placed on the heating plate, the back edge region of the wafer can be exposed, so that the reaction gas can more fully contact the polymer located in the back edge region, thereby successfully removing the polymer in the back edge region and the polymer on the side of the wafer, and avoiding corrosion of the metal on the wafer.
[0040] For ease of understanding, a semiconductor device provided by an embodiment of the present application will be described in detail below with reference to the accompanying drawings.
[0041] Reference Figure 2 As shown, it is a cross-sectional schematic diagram of a semiconductor device provided by an embodiment of the present application. The semiconductor device includes a first chamber 100, a heating plate 102 and a base 105 located in the first chamber 100.
[0042] The heating plate 102 is located above the base 105. The base 105 is used to support the heating plate 102. The size of the base 105 can be larger than the size of the heating plate 102 to provide a stable supporting effect. The shapes of the heating plate 102 and the base 105 are not specifically limited and can be a cylinder or a cube, etc. The heating plate 102 is used to place the wafer 101. During the process, the wafer 101 can be placed on the heating plate 102. The heating plate 102 can heat the wafer 101 and can also provide a supporting effect on the wafer 101.
[0043] The heating plate 102 has an upper surface and a lower surface. The lower surface contacts the base 105, and the upper surface contacts the wafer 101, that is, the upper surface of the heating plate 102 is close to the wafer 101. In addition, the size of the upper surface can be set to be smaller than the size of the wafer 101. When the shape of the heating plate 102 is circular, the size of the upper surface of the heating plate 102 can be the diameter of the heating plate 102, and the size of the wafer 101 can also be the diameter of the wafer 101.
[0044] The specific numerical values of the size of the upper surface of the heating plate 102 and the size of the wafer 101 are not specifically limited, as long as the back edge region of the heating plate 102 can be exposed. The back edge region is the outermost peripheral circle region of the lower surface of the heating plate 102. For example, the diameter of the upper surface of the heating plate 102 is less than the diameter of the wafer 101 by 300 mm.
[0045] In summary, when the wafer 101 is placed on the heating plate 102, due to the small size of the heating plate 102 and the large size of the wafer 101, the back edge region of the wafer 101 can be exposed, that is, the back edge region does not contact the surface of the heating plate 102. Thus, the reaction gas used to remove the polymer 104 can contact the polymer 104 located in the back edge region more fully, so as to remove the polymer 104 in the back edge region. In addition, the polymer 104 attached to the side surface of the wafer 101 is also exposed, and the reaction gas can more easily contact the polymer 104 located on the side surface from all directions, thereby successfully removing the polymer 104 attached to the back edge region and the side surface of the wafer 101 and avoiding corrosion of the metal on the wafer 101.
[0046] In addition, during the process of removing the polymer 104, the middle region of the back of the wafer 101 always contacts the surface of the heating plate 102. Thus, the large-flow gas will not blow the polymer 104 to the middle region of the back of the wafer 101, and the polymer 104 can be removed cleanly without damaging the metal on the next wafer 101.
[0047] Furthermore, in the related art, the wafer 101 needs to be lifted to remove the polymer 104. More specifically, when removing the polymer 104, the photoresist is etched with oxygen radicals, and then the water vapor radicals are used to consume the polymer 104 containing chlorine elements, and this process needs to be repeated continuously. Therefore, the ejector pin also needs to be lifted and lowered cyclically. In this way, during the lifting or lowering process, the wafer 101 is very likely to shift, and when the ejector pin is lifted, the large-flow oxygen is also likely to blow the wafer 101 crooked, which is very likely to trigger an alarm of the semiconductor device regarding the shift of the wafer position.
[0048] In the embodiment of the present application, by setting the sizes of the wafer 101 and the heating plate 102, the polymer 104 can be removed without lifting the wafer 101. Thus, the wafer 101 will not shift during the lifting or lowering process, thereby ensuring that the position of the wafer 101 remains basically unchanged and avoiding the alarm of the machine tool from affecting the process. In addition, the process of removing the photoresist is completed when the wafer 101 is placed on the heating plate 102, and there is no cyclic lifting and lowering process, which shortens the process time and improves the production efficiency.
[0049] In a possible implementation manner, the side surface of the heating plate 102 can be an inclined surface or a convex surface. The side surface is the surface of the side of the heating plate 102. For example, the longitudinal sectional view of the heating plate 102 can be a trapezoid, as shown in (a) of the reference Figure 3 The line of the side surface of the heating plate 102 can be a curve protruding outward, as shown in (b) of the reference Figure 2 shown.
[0050] In this way, compared with the case where the side surface of the heating plate 102 is a vertical surface, when the side surface bulges more outward, the inclined surface or convex side surface can bounce the incident plasma on the side surface. After a large amount of plasma is reflected, it can be incident on the polymer 104, so that more plasma can contact the polymer 104 in the back edge area of the wafer 101, thereby improving the removal effect and removal rate of the polymer 104.
[0051] In a possible implementation, the size of the lower surface of the heating plate 102 can be larger than the size of the wafer 101. The size of the lower surface can be the diameter of the lower surface of the heating plate 102. For example, the diameter of the lower surface of the heating plate 102 is larger than the diameter of the wafer 101. In this way, the fixing of the heating plate 102 can be made more firm, and the inclined surface length of the side surface of the heating plate 102 can be extended as much as possible to improve the removal effect on the polymer 104.
[0052] In a possible implementation, the semiconductor device may further include a plasma emission device 108 located in the first chamber 100 and disposed opposite to the heating plate 102, for emitting plasma into the first chamber 100.
[0053] Specifically, referring to Figure 4 As shown, the plasma emission device 108 can be a Remote Plasma Source (RPS), which can be arranged at an upper position in the first chamber 100. The plasma emission device 108 has a vacuum environment, and oxygen and water can be ionized by using a coil to form plasma, so as to be incident on the wafer 101 to remove the polymer 104. Figure 4 The arrows shown in
[0054] In a possible implementation, the semiconductor device further includes an isolation component 106 located above the base 105. The isolation component 106 includes a first part 1061. The size of the base 105 is larger than the size of the wafer 101. In the horizontal direction, the first part 1061 is located between the edge of the wafer 101 and the edge of the base 105, and the heating plate 102 is located within the area surrounded by the first part 1061.
[0055] Specifically, in order to improve the etching rate, a relatively high chamber pressure is usually adopted. Therefore, the movement direction of the plasma radicals introduced into the first chamber is very poor, and they will diffuse in all directions, and cannot etch the polymer 104 specifically.
[0056] Therefore, the diameter of the base 105 can be set to be larger than the diameter of the wafer 101. In this way, when the wafer 101 is placed on the heating plate 102, there is a certain distance between the edge of the wafer 101 and the edge of the base 105, which can be used to set the isolation component 106.
[0057] Specifically, the isolation component 106 can be set above the base 105. The isolation component 106 has a first part 1061, and the first part 1061 can be located at the edge position of the base 105. Refer to Figure 5 As shown, it is a top view of a heating plate provided by an embodiment of the present application. Horizontally, the first part 1061 is located between the edge of the wafer 101 and the edge of the base 105. More specifically, the first part 1061 is located between the outer edge of the heating plate 102 and the edge of the base 105. The dotted line in the figure is the inner edge of the heating plate 102. The first part 1061 can be understood as a hollow cylinder, which can prevent the free diffusion of plasma, limit the plasma in a smaller area, improve the movement directionality of the plasma, and can etch the polymer 104 specifically, improving the etching effect and etching rate.
[0058] In a possible implementation manner, the isolation component 106 may further include a second part 1062 located above the first part 1061. The second part 1062 extends in the horizontal direction, and the size of the area surrounded by the second part 1062 is smaller than the size of the area surrounded by the first part 1061.
[0059] Specifically, the second component can extend horizontally, that is, the isolation component 106 can include a first part 1061 extending longitudinally, and can also include a second part 1062 extending horizontally. The second part 1062 is installed above the first part 1061. The second part 1062 can be understood as a hollow cylinder, and the inner diameter of the second part 1062 can be smaller than the inner diameter of the first part 1061. Refer to Figure 6 As shown, a horizontal second part 1062 is provided on the first part 1061, and the difference between the inner diameter and the outer diameter of the second part 1062 is relatively large. Refer to Figure 7 As shown, it is a top view of the heating plate. The area occupied by the second part 1062 is relatively large and is located between the wafer 101 and the base 105.
[0060] Specifically, there is a first distance between the upper surface of the wafer 101 and the upper surface of the base 105, and there is a second distance between the lower surface of the second part 1062 and the upper surface of the base 105. The second distance is greater than the first distance. That is to say, the first distance is the height of the upper surface of the wafer 101 from the base 105, the second distance is the height of the second part 1062 from the base 105, and the second distance can be greater than the first distance. Refer to Figure 6As shown, the second part 1062 of the isolation component 106 is higher than the surface of the wafer 101. In this way, the space formed by the first part 1061 and the second part 1062 can be larger, capable of accommodating more plasma, thereby accelerating the etching rate of the polymer 104.
[0061] In a possible implementation, the first part 1061 can move in the vertical direction. That is to say, the first part 1061 can rise from the base 105 or retract into the base 105, so that the first part 1061 can be adjusted to a suitable height according to process requirements.
[0062] In a possible implementation, the semiconductor device may further include an opening 107 on the sidewall of the first chamber 100, and the opening 107 is used to transfer the wafer 101. Refer to Figure 6 As shown, during the etching process, the wafer 101 can be fed into the first chamber 100 through the opening 107, and after removing the polymer 104, the wafer 101 can be taken out of the first chamber 100 through the opening 107, thereby accelerating the process.
[0063] In a possible implementation, during the etching process, the upper surface of the first part 1061 is at a first height, and the first height is greater than the first distance between the upper surface of the wafer 101 and the upper surface of the base 105. Specifically, since the first part 1061 can move up and down, during the process of removing the polymer 104, it is necessary to concentrate the plasma as much as possible near the wafer 101, then the first part 1061 can be raised so that its upper surface is at the first height. At this time, the upper surface of the first part 1061 is higher than the upper surface of the wafer 101, that is, the first height is greater than the first distance, to ensure that the wafer 101 can be within the area surrounded by the first part 1061.
[0064] Specifically, after the etching process is completed, the upper surface of the first part 1061 is at a second height, and the second height is less than the third distance in the longitudinal direction between the opening 107 and the upper surface of the base 105, and the first height is greater than the second height. That is to say, after removing the polymer 104, it is necessary to move the wafer 101 out of the first chamber 100 and transfer it to other chambers, then the first part 1061 can be retracted into the base 103 so that its upper surface is lower than the opening 107, that is, the second height is less than the third distance, to avoid the too-high first part 1061 from hindering the removal of the wafer 101, thus facilitating the free transmission of the wafer 101.
[0065] In a possible implementation, the semiconductor device may further include a vacuum transfer platform 109 communicating with the first chamber 100, and at least one second chamber 111 communicating with the vacuum transfer platform 109. The second chamber 111 can be used to complete other process operations, such as etching metal and other processes. The number of the second chambers 111 can be multiple, that is, the vacuum transfer platform 109 can be connected to multiple chambers. For example, multiple chambers can be arranged around the vacuum transfer platform 109.
[0066] Reference Figure 8 As shown, it is a cross-sectional schematic diagram of another semiconductor device provided by an embodiment of the present application. The vacuum transfer platform 109 communicates with the first chamber 100 and the second chamber 111. A robotic arm 110 is provided in the vacuum transfer platform 109 for transferring the wafer 101 between the first chamber 100 and the second chamber 111. The robotic arm 110 can pick up and deliver the wafer 101 in the first chamber 100 through the opening 107, and can also pick up and deliver the wafer in the second chamber 111. As an example, when the operation of removing the polymer is completed on the wafer 101 in the first chamber 100, it can be transferred to the second chamber 111 through the robotic arm 110 for the next process operation, thereby accelerating the process and facilitating wafer grasping.
[0067] An embodiment of the present application provides a semiconductor device, including a heating plate and a base located in the first chamber. The heating plate is located above the base, and the base is used to support the heating plate. The heating plate is used to place the wafer. The upper surface of the heating plate is close to the wafer, and the size of the upper surface is smaller than the size of the wafer. In the present application, by setting the size of the upper surface of the heating plate to be smaller than the size of the wafer, in this way, when the wafer is placed on the heating plate, the back edge area of the wafer can be exposed, so that the reaction gas can more fully contact the polymer located in the back edge area, thereby successfully removing the polymer in the back edge area and the polymer on the side of the wafer, and avoiding corrosion of the metal on the wafer.
[0068] Each embodiment in this specification is described in a progressive manner. The same or similar parts among the embodiments can be referred to each other, and the key points of each embodiment are the differences from other embodiments.
[0069] The above are only the preferred embodiments of the present application. Although the present application has been disclosed above with preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make many possible changes and modifications to the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application without departing from the content of the technical solution of the present application still fall within the scope of the protection of the technical solution of the present application.
Claims
1. A semiconductor device, characterized in that, Comprising: A heating plate and a base located in a first chamber, the heating plate being located above the base, the base being used to support the heating plate, and the heating plate being used to place a wafer; The upper surface of the heating plate is close to the wafer, and the size of the upper surface is smaller than the size of the wafer.
2. The semiconductor device according to claim 1, wherein, The semiconductor device further comprises: An isolation component located above the base; the isolation component includes a first part, the size of the base is larger than the size of the wafer, and in the horizontal direction, the first part is located between the edge of the wafer and the edge of the base, and the heating plate is located within the area surrounded by the first part.
3. The semiconductor device according to claim 2, wherein, The isolation component further includes a second part located above the first part, the second part extends along the horizontal direction, and the size of the area surrounded by the second part is smaller than the size of the area surrounded by the first part; There is a first distance between the upper surface of the wafer and the upper surface of the base, and there is a second distance between the lower surface of the second part and the upper surface of the base, and the second distance is greater than the first distance.
4. The semiconductor device according to claim 2, wherein The first part moves in the vertical direction.
5. The semiconductor device according to claim 1, characterized in that, The side surface of the heating plate is an inclined surface or a convex surface.
6. The semiconductor device according to claim 1, wherein, The size of the lower surface of the heating plate is larger than the size of the wafer.
7. The semiconductor device according to claim 2, wherein, The semiconductor device further comprises: An opening located on the side wall of the first chamber, and the opening is used to transfer the wafer.
8. The semiconductor device according to claim 7, wherein, During the etching process, the upper surface of the first part is at a first height, and the first height is greater than the first distance between the upper surface of the wafer and the upper surface of the base; After the etching process is completed, the upper surface of the first part is at a second height, and the second height is smaller than the third distance in the longitudinal direction between the opening and the upper surface of the base, and the first height is greater than the second height.
9. The semiconductor device according to claim 1, wherein The semiconductor device further comprises: A plasma emission device located in the first chamber and disposed opposite to the heating plate, for emitting plasma into the first chamber.
10. The semiconductor device according to claim 1, characterized in that, The semiconductor device further comprises: A vacuum transfer platform communicated with the first chamber, and at least one second chamber communicated with the vacuum transfer platform; A robotic arm is provided in the vacuum transfer platform for transferring the wafer between the first chamber and the second chamber.