Gallium oxide crystal growing furnace

Abstract

The utility model discloses a gallium oxide crystal growing furnace which comprises a furnace body and a lifting mechanism, a functional assembly in the furnace body divides an inner cavity of the furnace body into a growing cavity and a preheating annealing cavity, the lifting mechanism comprises a crucible and a lifting assembly, and the lifting assembly can drive the crucible to enter and exit from the growing cavity and the preheating annealing cavity. The preheating annealing cavity is arranged in the crucible, so that materials in the crucible can be preheated in the preheating annealing cavity, growth of gallium oxide crystals is completed in the growth cavity, and the grown gallium oxide crystals are annealed in the preheating annealing cavity. The growth furnace adopts a double-cavity structure in which the growth cavity and the preheating annealing cavity are separated, and the functional assembly can be switched between a heat dissipation state and a heat insulation state so as to adapt to different temperature requirements of gallium oxide crystal growth and annealing treatment, the grown gallium oxide crystal is subjected to in-situ annealing in the preheating annealing cavity, and the production efficiency is improved. And the crystal dislocation is greatly reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of gallium oxide crystal growth, in particular to a gallium oxide crystal growth furnace. Background Art

[0002] There are various types of high-temperature oxide crystals with different properties. They are the basic materials for producing various power electronic devices, detectors, and sensors, and play a very important role in China's national defense, science and technology, and industry.

[0003] The growth of high-temperature oxide crystals is usually carried out under the protection of inert gas or in a vacuum environment. Due to the characteristic that gallium oxide is easily decomposed at high temperatures, the crystal growth of gallium oxide can only be carried out in an oxygen-containing atmosphere. At the same time, the melting point of gallium oxide is as high as 1793 °C. Therefore, in the early research and production, only iridium materials could be used as containers and heaters. So the edge-defined film-fed growth (EFG) method and the Czochralski method were common technical means at that time. With the further requirements for higher crystal quality and output, the vertical Bridgman (VB) method began to come into the view of researchers.

[0004] The VB method itself has the advantages of large production capacity, easy control of crystal shape, and high degree of equipment automation. However, due to the particularity of gallium oxide crystal growth, the selection of high-temperature devices and the optimization of the thermal field structure in the VB furnace (crystal growth furnace using the vertical Bridgman method) have become the main research directions.

[0005] Since gallium oxide must be grown in an oxygen-containing atmosphere, conventional heating means are not applicable. Only molybdenum disilicide (MoSi2) heaters (hereinafter referred to as silicon molybdenum heaters) can meet the requirements of gallium oxide crystal growth in terms of the use temperature in an oxygen-containing atmosphere. The existing gallium oxide VB method crystal growth furnaces are difficult to produce. And the silicon molybdenum heaters will experience a phase change critical point during the process of changing from high temperature to low temperature, and are extremely easy to break during this process. With the continuous expansion of production capacity, the loss of heaters has become unacceptable.

[0006] At the same time, due to the characteristics that gallium oxide is easy to cleave in the <100> direction and the <001> direction, if the internal stress cannot be effectively reduced after crystal growth is completed, excessive dislocations will be generated inside the crystal until macroscopically visible cracks appear, seriously affecting the crystal quality and yield. Therefore, how to anneal the grown gallium oxide as soon as possible is also the main problem faced by those skilled in the art at present. Content of the Utility Model

[0007] The purpose of the utility model is to provide a gallium oxide crystal growth furnace to solve the problems existing in the above-mentioned prior art, reduce the heat loss of the gallium oxide crystal growth furnace, enable the grown gallium oxide crystal to complete annealing as soon as possible, and improve the gallium oxide crystal growth efficiency.

[0008] To achieve the above object, the present utility model provides the following solutions: The present utility model provides a gallium oxide crystal growth furnace, including:

[0009] A furnace body, in which a functional component is arranged, and the functional component divides the inner cavity of the furnace body into a growth cavity and a preheating annealing cavity. The functional component has a communication hole, and the growth cavity is connected to the preheating annealing cavity through the communication hole. A first heater is arranged in the growth cavity, and a second heater is arranged in the preheating annealing cavity; the functional component can be switched between a heat dissipation state and a heat insulation state;

[0010] A lifting mechanism, which includes a crucible and a lifting component. The crucible can accommodate gallium oxide seeds, and the crucible is arranged on the lifting component. The lifting component is slidably arranged in the furnace body, and the lifting component can drive the crucible to reciprocate to enter and exit the growth cavity and the preheating annealing cavity, and the lifting component can block the communication hole.

[0011] Preferably, the first heater is a silicon molybdenum heater, and the second heater includes a heating element, and the heating element is arranged on the side wall of the preheating annealing cavity.

[0012] Preferably, the heating element is a heating wire, and the heating element is spirally wound around the axis of the preheating annealing cavity.

[0013] Preferably, the turn spacing of the heating element can be adjusted.

[0014] Preferably, the lifting component includes a lifting rod and a blocking plate. The crucible can be fixed on the lifting rod. The number of the blocking plates is two groups, and the two groups of blocking plates are respectively located at the top and bottom of the crucible, and the blocking plate matches the shape of the communication hole, and the blocking plate is made of heat-insulating material.

[0015] Preferably, the functional component includes a switching structure layer, and the switching structure layer has a medium flow channel inside. The medium flow channel can be connected to a heat dissipation medium source and a vacuum pumping device. The heat dissipation medium source can transport heat dissipation medium into the medium flow channel, and the vacuum pumping device can perform vacuum pumping treatment on the medium flow channel.

[0016] Preferably, the medium flow channel is arranged around the communication hole.

[0017] Preferably, along the connection direction of the growth cavity and the preheating annealing cavity, heat-insulating partition plates are respectively arranged on both sides of the switching structure layer. The heat-insulating partition plates are made of heat-insulating material, and the heat-insulating partition plates and the switching structure layer both have through holes to form the communication hole;

[0018] The switching structure layer is made of porous material.

[0019] The present utility model has achieved the following technical effects compared with the prior art: The gallium oxide crystal growth furnace of the present utility model includes a furnace body and a lifting mechanism. A functional component is arranged in the furnace body, and the functional component divides the inner cavity of the furnace body into a growth cavity and a preheating and annealing cavity. The functional component has a communication hole, and the growth cavity is connected to the preheating and annealing cavity through the communication hole. A first heater is arranged in the growth cavity, and a second heater is arranged in the preheating and annealing cavity; the functional component can be switched between a heat dissipation state and a heat insulation state; the lifting mechanism includes a crucible and a lifting component. The crucible can accommodate gallium oxide seeds, the crucible is arranged on the lifting component, and the lifting component is slidably arranged in the furnace body. The lifting component can drive the crucible to reciprocate to enter and exit the growth cavity and the preheating and annealing cavity, and the lifting component can block the communication hole.

[0020] The gallium oxide crystal growth furnace of the present utility model includes a furnace body and a lifting mechanism. The functional component in the furnace body divides the inner cavity of the furnace body into a growth cavity and a preheating and annealing cavity. A first heater is arranged in the growth cavity, and a second heater is arranged in the preheating and annealing cavity. The lifting mechanism includes a crucible and a lifting component. The lifting component can drive the crucible to enter and exit the growth cavity and the preheating and annealing cavity, so that the material in the crucible can be preheated in the preheating and annealing cavity, the gallium oxide crystal growth is completed in the growth cavity, and the grown gallium oxide crystal is annealed in the preheating and annealing cavity. The growth furnace of the present utility model adopts a double-cavity structure with the growth cavity and the preheating and annealing cavity separated, and the functional component can be switched between a heat dissipation state and a heat insulation state to adapt to the different temperature requirements of gallium oxide crystal growth and annealing treatment, reduce the heat loss of the growth furnace, and improve the growth efficiency of gallium oxide crystals; at the same time, the present utility model adopts a double-cavity structure, so that the growth cavity works in the optimal working temperature range of the heater for a long time, effectively avoiding mechanical damage caused by the heater being frequently cooled below the threshold, thereby providing effective protection for the first heater, greatly prolonging the service life of the first heater, solving the problem that the silicon molybdenum heater in the prior art is easily damaged, and saving production costs; in addition, the grown gallium oxide crystal in the present utility model is in-situ annealed in the preheating and annealing cavity, greatly reducing crystal dislocations and improving the quality of gallium oxide crystals. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present utility model or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present utility model. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0022] Figure 1 It is a schematic structural diagram of the gallium oxide crystal growth furnace disclosed in the embodiments of the present utility model;

[0023] Figure 2 Schematic diagram of the crucible of the gallium oxide crystal growth furnace disclosed in the embodiment of the present utility model located in the preheating annealing chamber;

[0024] Figure 3 Schematic diagram of the crucible of the gallium oxide crystal growth furnace disclosed in the embodiment of the present utility model located at the loading and unloading position;

[0025] Figure 4 Partial schematic diagram of the gallium oxide crystal growth furnace disclosed in the embodiment of the present utility model;

[0026] Figure 5 Schematic diagram of the functional components of the gallium oxide crystal growth furnace disclosed in the embodiment of the present utility model.

[0027] Among them, 100 is the gallium oxide crystal growth furnace;

[0028] 1 is the furnace body, 2 is the growth chamber, 3 is the preheating annealing chamber, 4 is the functional component, 5 is the crucible, 6 is the lifting rod, 7 is the heating element, 8 is the sealing plate, 9 is the switching structure layer, and 10 is the heat insulation partition board. Specific implementation manners

[0029] Next, the technical solutions in the embodiments of the present utility model will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.

[0030] The purpose of the present utility model is to provide a gallium oxide crystal growth furnace to solve the problems existing in the above-mentioned prior art, reduce the heat loss of the gallium oxide crystal growth furnace, enable the grown gallium oxide crystal to complete annealing as soon as possible, and improve the growth efficiency of the gallium oxide crystal.

[0031] To make the above objects, features, and advantages of the present utility model more obvious and understandable, the present utility model will be further described in detail below in conjunction with the accompanying drawings and specific implementation manners.

[0032] The present utility model provides a gallium oxide crystal growth furnace 100, which includes a furnace body 1 and a lifting mechanism. A functional component 4 is arranged inside the furnace body 1, and the functional component 4 divides the inner cavity of the furnace body 1 into a growth cavity 2 and a preheating and annealing cavity 3. The functional component 4 has a communication hole, and the growth cavity 2 is connected to the preheating and annealing cavity 3 through the communication hole. A first heater is arranged inside the growth cavity 2, and a second heater is arranged inside the preheating and annealing cavity 3. The functional component 4 can be switched between a heat dissipation state and a heat insulation state. The lifting mechanism includes a crucible 5 and a lifting component. The crucible 5 can accommodate gallium oxide seeds, the crucible 5 is arranged on the lifting component, the lifting component is slidably arranged inside the furnace body 1, and the lifting component can drive the crucible 5 to reciprocate to enter and exit the growth cavity 2 and the preheating and annealing cavity 3, and the lifting component can block the communication hole.

[0033] The gallium oxide crystal growth furnace 100 of the present utility model includes a furnace body 1 and a lifting mechanism. The functional component 4 inside the furnace body 1 divides the inner cavity of the furnace body 1 into a growth cavity 2 and a preheating and annealing cavity 3. A first heater is arranged inside the growth cavity 2, and a second heater is arranged inside the preheating and annealing cavity 3. The lifting mechanism includes a crucible 5 and a lifting component. The lifting component can drive the crucible 5 to enter and exit the growth cavity 2 and the preheating and annealing cavity 3, so that the material inside the crucible 5 can be preheated in the preheating and annealing cavity 3, and gallium oxide crystal growth can be completed in the growth cavity 2. The grown gallium oxide crystal is annealed in the preheating and annealing cavity 3. The growth furnace of the present utility model adopts a double-chamber structure with the growth cavity 2 and the preheating and annealing cavity 3 separated, and the functional component 4 can be switched between a heat dissipation state and a heat insulation state to adapt to different temperature requirements for gallium oxide crystal growth and annealing treatment, reduce heat loss of the growth furnace, and improve the growth efficiency of gallium oxide crystals. In addition, in the present utility model, the grown gallium oxide crystal is in-situ annealed in the preheating and annealing cavity 3, greatly reducing crystal dislocations and improving the quality of gallium oxide crystals.

[0034] Among them, the first heater is a molybdenum disilicide heater, and the long-term working temperature of the growth cavity 2 is between the preheating / annealing temperature and the growth temperature, extending the service life of the first heater. The second heater includes a heating element 7, and the heating element 7 is arranged on the side wall of the preheating and annealing cavity 3 to improve heating uniformity.

[0035] In this specific embodiment, the heating element 7 is a heating wire, and the heating element 7 is spirally wound around the axis of the preheating and annealing cavity 3. When the lifting component drives the crucible 5 to enter the preheating and annealing cavity 3 for preheating or annealing, the heating element 7 is wound around the inner wall of the preheating and annealing cavity 3 and can heat around the crucible 5, further improving heating uniformity. In this specific embodiment, the heating element 7 uses an iron-chromium-aluminum heating wire. In practical applications, other types of heating wires can also be used to improve the flexibility and adaptability of the second heater.

[0036] It should also be emphasized that the turn spacing of the heating element 7 can be adjusted. By adjusting the winding turn spacing of the heating element 7, the heating rate of the second heater can be optimized to further improve the heating uniformity.

[0037] Specifically, the lifting assembly includes a lifting rod 6 and a sealing plate 8. The crucible 5 can be fixed on the lifting rod 6. The number of the sealing plates 8 is two groups. The two groups of sealing plates 8 are respectively located at the top and bottom of the crucible 5, and the sealing plate 8 matches the shape of the communication hole. The sealing plate 8 is made of heat-insulating material. During the crystal growth process, the crucible 5 can be fixed on the lifting rod 6, and the lifting rod 6 reciprocates to drive the crucible 5 in and out of the preheating annealing chamber 3 and the growth chamber 2 to complete material preheating, crystal growth, and crystal annealing. The heat-insulating sealing plate 8 can seal the communication hole. When the crucible 5 enters the growth chamber 2, the sealing plate 8 below the crucible 5 seals the communication hole so that the growth chamber 2 and the preheating annealing chamber 3 can maintain different working temperatures respectively; in practical applications, it can be determined whether to set the sealing plate 8 above the crucible 5 according to the actual crystal growth requirements. When the crucible 5 is preheating in the preheating annealing chamber 3, if the temperature in the growth chamber 2 remains the same as that in the preheating annealing chamber 3, the upper sealing plate 8 may not be set; if the temperature in the growth chamber 2 is different from that in the preheating annealing chamber 3, a sealing plate 8 can be added above the crucible 5, and the upper sealing plate 8 is used to seal the communication hole to prevent the growth chamber 2 and the preheating annealing chamber 3 from affecting each other, and the function of thermal decoupling of the two chambers can also be realized. It should also be explained here that the sealing plate 8 below the crucible 5 can be set on the lifting rod 6, and the sealing plate 8 above the crucible 5 can be connected to the lifting rod 6 by structures such as a connecting frame to ensure that the sealing plate 8 can reciprocate with the lifting rod 6; in addition, the thickness of the sealing plate 8 is reasonably set to avoid the sealing plate 8 affecting the normal operation of the functional component 4, and the distance between the sealing plate 8 and the crucible 5 is reasonably set so that when the sealing plate 8 seals the communication hole, the crucible 5 can be located at a proper position in the growth chamber 2 and the preheating annealing chamber 3. Reasonably setting the above parameters is a common means for those skilled in the art and will not be elaborated here.

[0038] More specifically, the functional component 4 includes a switching structure layer 9. Inside the switching structure layer 9, there are medium flow channels which can be connected to a heat dissipation medium source and a vacuum pumping device. The heat dissipation medium source can transport the heat dissipation medium into the medium flow channels, and the vacuum pumping device can perform vacuum pumping treatment on the medium flow channels. When the working state of the functional component 4 is the heat dissipation state, the medium flow channels are connected to the heat dissipation medium source, and the heat dissipation medium source transports the heat dissipation medium into the medium flow channels. The switching structure layer 9 can exchange heat with the growth chamber 2 and the preheating annealing chamber 3 to adjust the temperatures inside the growth chamber 2 and the preheating annealing chamber 3. The heat dissipation medium can be cooling water or other cooling fluids. When the working state of the functional component 4 is switched to the heat insulation state, the medium flow channels are connected to the vacuum pumping device, and the vacuum pumping device performs vacuum pumping treatment on the medium flow channels. After the vacuum pumping, the heat insulation ability of the medium flow channels is improved, playing a role in heat insulation. During the crystal growth and annealing processes, the working state of the functional component 4 can be adjusted as needed to control the heat exchange inside the furnace body 1, thereby greatly improving the control degree of the growth furnace over the crystal growth process.

[0039] In practical applications, the medium flow channels can be arranged to surround the communication holes to enhance the uniformity of heat exchange, thereby improving the heating uniformity inside the growth furnace and ensuring the crystal growth quality. Additionally, it should be noted that when cooling fluid is introduced into the medium flow channels, a cooling fluid circulation loop can be constructed to further enhance the heat dissipation performance of the functional component 4.

[0040] In other specific embodiments of the present invention, along the connection direction of the growth chamber 2 and the preheating annealing chamber 3, heat insulation partitions 10 are respectively arranged on both sides of the switching structure layer 9. The heat insulation partitions 10 are made of heat insulation materials. Both the heat insulation partitions 10 and the switching structure layer 9 have through holes to form communication holes. Heat insulation partitions 10 are arranged at both ends of the switching structure layer 9, so that when the switching structure layer 9 exchanges heat with one of the double chambers (specifically referring to the growth chamber 2 and the preheating annealing chamber 3), it can avoid affecting the other chamber, ensuring the temperature independence of the double chambers inside the furnace body 1.

[0041] In practical applications, the switching structure layer 9 can be made of a porous mesh material to form uniform medium flow channels. For example, alumina or zirconia ceramic materials are used, and regular porous channels are formed inside to form the medium flow channels. When cooling fluid (cooling water or cooling gas) is introduced, the cooling fluid comes into full contact with the switching structure layer 9, increasing the heat exchange efficiency. When the medium flow channels are evacuated, a good heat resistance structure is formed, reducing heat loss. The heat insulation partitions 10 can be made of alumina or zirconia fiber boards.

[0042] In addition, it should be noted that in order to reduce heat loss, heat insulation layers are provided in both the growth chamber 2 and the preheating and annealing chamber 3 to reduce the heat exchange between the inside and the outside environment of the growth chamber 2 and the preheating and annealing chamber 3. In practical applications, the furnace body 1 can also adopt a split structure, with the furnace body 1 being set as two parts, and the inner cavities of the two parts being used as the growth chamber 2 and the preheating and annealing chamber 3 respectively. The furnace body 1 is constructed by connecting with the functional component 4. In practical applications, the furnace body 1 with a suitable structure can be selected according to the actual working conditions to further improve the flexible adaptability of the growth furnace.

[0043] Furthermore, when using the gallium oxide crystal growth furnace 100 of the present utility model to grow gallium oxide crystals, the following steps are included:

[0044] Step 1: Drive the crucible 5 into the preheating and annealing chamber 3 by using the lifting component, and the first heater and the second heater work to heat both the growth chamber 2 and the preheating and annealing chamber 3 to the first temperature. During this period, the functional component 4 is in the heat insulation state;

[0045] Step 2: Keep the first temperature constant and hold for a period of time;

[0046] Step 3: Drive the crucible 5 into the growth chamber 2 through the communication hole by using the lifting component, and the lifting component seals the communication hole. The first heater works to heat the growth chamber 2 to the second temperature, and the functional component 4 switches to the heat dissipation state, and gallium oxide crystals grow;

[0047] Step 4: After the growth of gallium oxide crystals is completed, use the functional component 4 to dissipate heat to reduce the temperature in the growth chamber 2 to the first temperature. After the growth chamber 2 cools down, the functional component 4 switches to the heat insulation state;

[0048] Step 5: Drive the crucible 5 back to the preheating and annealing chamber 3 by using the lifting component for in-situ annealing treatment.

[0049] The present utility model uses the above-mentioned gallium oxide crystal growth furnace 100, enabling the growth and annealing of gallium oxide crystals to be carried out at different temperatures, and using the functional component 4 to control heat exchange, improving the controllability of the gallium oxide crystal growth process and enhancing the crystal growth quality.

[0050] In this specific embodiment, the first temperature is 1200 °C and the second temperature is 1850 °C. In actual production, the first temperature and the second temperature can also be adjusted according to the specific working conditions to meet the production requirements.

[0051] Next, through specific embodiments, the use of the gallium oxide crystal growth furnace of the present utility model will be further explained.

[0052] Example 1

[0053] When growing gallium oxide crystals using the gallium oxide crystal growth furnace 100, the following steps are included:

[0054] 1. Place the crucible 5 loaded with raw materials on the lifting rod 6;

[0055] 2. Raise the crucible 5 to the preheating and annealing chamber 3, as Figure 2 shown;

[0056] 3. Slowly heat up both the preheating and annealing chamber 3 and the growth chamber 2 to 1200 °C. During this period, the medium flow channel of the functional component 4 remains under vacuum (in normal processes, the temperature of the growth chamber 2 should be maintained at 1200 °C at this time, and during startup from room temperature, it is necessary to heat up synchronously);

[0057] 4. Hold at a constant temperature of 1200 °C for a period of time;

[0058] 5. Raise the crucible 5 to the initial position of the growth chamber 2;

[0059] 6. Keep the temperature of the preheating and annealing chamber 3 unchanged, and slowly raise the temperature of the growth chamber 2 to 1850 °C;

[0060] 7. Turn on the heat dissipation state of the functional component 4, and adjust the position of the crucible 5 to enter crystal growth. For details, see Figure 1 ;

[0061] 8. Carry out crystal growth according to the process;

[0062] 9. After crystal growth is completed, slowly lower the temperature of the growth chamber 2 to 1200 °C. During this period, drain the cooling fluid in the functional component 4 and evacuate to vacuum;

[0063] 10. Lower the crucible 5 to the center position of the preheating and annealing chamber 3, and hold at a constant temperature for a period of time according to the process to complete in-situ annealing of the crystal;

[0064] 11. Cool down the preheating and annealing chamber 3 to near room temperature according to the process, and move the crucible 5 to the discharging position;

[0065] 12. Take out the crucible 5 to complete the crystal growth process.

[0066] After growing gallium oxide crystals using the gallium oxide crystal growth furnace 100, a cooling and maintenance operation can be carried out. The specific operation includes the following steps:

[0067] 1a. End crystal growth according to the normal process and take out the crucible 5;

[0068] 2a. Slowly lower the temperature of the growth chamber 2 according to the process;

[0069] 3a. When the cooling rate cannot meet the process requirements, turn on the heat dissipation function of the functional component 4 to further increase the cooling rate until the safe temperature is reached;

[0070] 4a. Lift the sealing plate 8 at the top to further cool down to near room temperature;

[0071] 5a. At this time, the facilities inside the furnace body 1 can be repaired and maintained;

[0072] 6a. After the repair and maintenance are completed, the sealing plate 8 at the top can be closed;

[0073] 7a. Start a new round of crystal growth according to the procedures of the above operations (Steps 1 to 12).

[0074] The gallium oxide crystal growth furnace 100 of the present invention adopts a double-chamber structure of a growth chamber 2 and a preheating and annealing chamber 3, realizes in-situ annealing of the crystal, reduces crystal dislocations, improves the crystal quality, and according to the temperature gradient and growth rate during the actual crystal growth process, enables the functional component 4 to be used alternatively in the working modes of a heat dissipation state and a heat insulation state, greatly improves the crystal growth efficiency, and reduces heat loss.

[0075] Specific examples are applied in the present invention to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A gallium oxide crystal growth furnace, characterized in that, Comprising: A furnace body, in which a functional component is arranged, and the functional component divides the inner cavity of the furnace body into a growth cavity and a preheating and annealing cavity. The functional component has a communication hole, and the growth cavity is connected to the preheating and annealing cavity through the communication hole. A first heater is arranged in the growth cavity, and a second heater is arranged in the preheating and annealing cavity; the functional component can be switched between a heat dissipation state and a heat insulation state; A lifting mechanism, which includes a crucible and a lifting component. The crucible can accommodate gallium oxide seeds, and the crucible is arranged on the lifting component. The lifting component is slidably arranged in the furnace body, and the lifting component can drive the crucible to reciprocate to enter and exit the growth cavity and the preheating and annealing cavity, and the lifting component can block the communication hole.

2. The gallium oxide crystal growth furnace according to claim 1, characterized in that: The first heater is a silicon molybdenum heater, and the second heater includes a heating element, and the heating element is arranged on the side wall of the preheating and annealing cavity.

3. The gallium oxide crystal growth furnace according to claim 2, characterized in that: The heating element is a heating wire, and the heating element is spirally wound around the axis of the preheating and annealing cavity.

4. The gallium oxide crystal growth furnace according to claim 3, characterized in that: The turn spacing of the heating element can be adjusted.

5. The gallium oxide crystal growth furnace according to claim 1, characterized in that: The lifting component includes a lifting rod and a blocking plate. The crucible can be fixed on the lifting rod. The number of the blocking plates is two groups, and the two groups of blocking plates are respectively located at the top and bottom of the crucible, and the blocking plate matches the shape of the communication hole. The blocking plate is made of heat-insulating material.

6. The gallium oxide crystal growth furnace according to any one of claims 1-5, characterized in that: The functional component includes a switching structure layer, and the switching structure layer has a medium flow channel inside. The medium flow channel can be connected to a heat dissipation medium source and a vacuum pumping device. The heat dissipation medium source can transport heat dissipation medium into the medium flow channel, and the vacuum pumping device can perform vacuum pumping treatment on the medium flow channel.

7. The gallium oxide crystal growth furnace according to claim 6, characterized in that: The medium flow channel surrounds the communication hole.

8. The gallium oxide crystal growth furnace according to claim 6, characterized in that: Along the connection direction of the growth cavity and the preheating and annealing cavity, heat insulation partitions are respectively arranged on both sides of the switching structure layer. The heat insulation partitions are made of heat-insulating material. The heat insulation partitions and the switching structure layer both have through holes to form the communication hole; The switching structure layer is made of a porous material.

Images