Semiconductor process device and ion implantation equipment

Abstract

The utility model provides a semiconductor process device and ion implantation equipment. The material of the inner wall of a storage cavity in the semiconductor process device is tungsten; halogen-containing ion implantation process gas is introduced into the first gas inlet channel, and protective gas is introduced into the second gas inlet channel; the gas uniform mixing structure is used for uniformly mixing the introduced gas; the flow velocity control structure controls the flow velocity of the ion implantation process gas and the protective gas entering the storage cavity so as to control the proportion of the ion implantation process gas and the protective gas in the storage cavity. The gas inlet flow velocity of the first gas inlet channel and the gas inlet flow velocity of the second gas inlet channel are controlled, dissociation metal pollution in the storage cavity is controlled to be minimum, the ion implantation process yield is improved, and the dissociation metal pollution monitoring requirement is lowered; meanwhile, a gas uniform mixing structure is arranged to uniformly mix and introduce gas, so that generated dissociation metal pollution is reduced; in addition, the uniform gas mixing effect is ensured by arranging the position of the blade fan; and finally, a storage cavity shell material is arranged, deformation of the storage cavity is avoided, and the structural stability is improved.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductor equipment, and particularly relates to a semiconductor process device and an ion implantation device. Background Art

[0002] With the continuous development of semiconductor process technology, the gate oxide layer of chips is getting thinner and the critical dimensions are getting smaller. Especially since entering the process below 40nm, the metal contamination brought about during the ion implantation process has increasingly become a key factor restricting chip performance, yield, and reliability.

[0003] In the prior art, the main means of reducing metal contamination in ion implantation mainly focus on the improvement of metal components of ion implantation equipment, which can be roughly divided into the following three aspects: 1) adding a protective layer on the basis of existing metal components to prevent the direct bombardment of the ion beam on the surface of the metal material and reduce the sputtering process; 2) replacing the ion source cavity material with other metal materials with a large difference in mass-to-charge ratio from the implanted element; 3) replacing the metal material of existing components with non-metal materials.

[0004] However, the above means can only solve the metal contamination caused by ion beam sputtering and cannot solve the dissociation metal contamination caused by physical and chemical reactions in the ion source cavity. And the dissociation metal contamination often injects into the wafer interior along with the ion beam, resulting in drift of wafer electrical characteristic parameters, yield loss, and even reliability failure; at the same time, due to the characteristics of strong concealment, high prevention difficulty, and serious harm of dissociation metal contamination, it can only be discovered in regular metal contamination tests and is difficult to be discovered and corrected during daily production. Therefore, it greatly increases the maintenance cost of ion implantation equipment and reduces the maintenance efficiency.

[0005] Therefore, there is an urgent need for a structure that can reduce the dissociation metal contamination generated in the ion implantation process at present.

[0006] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present application. Summary of the Utility Model

[0007] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide a semiconductor process device and an ion implantation device, which are used to solve the problem of serious metal contamination generated in the ion implantation process in the prior art.

[0008] To achieve the above purpose and other related purposes, the present utility model provides the following technical solutions:

[0009] In a first aspect, the present utility model provides a semiconductor process device, which includes: a first intake passage, a second intake passage, an outlet passage, a flow rate control structure, and a gas mixing structure for a storage cavity; the inner wall material of the storage cavity contains tungsten;

[0010] Both the first intake passage and the second intake passage are in communication with the storage cavity. The first intake passage is used to introduce an ion implantation process gas containing a halogen, and the second intake passage is used to introduce a protective gas; the gas mixing structure is located inside the storage cavity and is used to mix the ion implantation process gas introduced through the first intake passage and the protective gas introduced through the second intake passage; the outlet passage is in communication with the storage cavity and is used to discharge the gas mixed by the gas mixing structure inside the storage cavity from the storage cavity to an ion implantation process chamber;

[0011] The flow rate control structure is used to control in real time the flow rates of the ion implantation process gas entering through the first intake passage and the protective gas entering through the second intake passage into the storage cavity, so as to control in real time the ratio of the ion implantation process gas and the protective gas inside the storage cavity.

[0012] Optionally, the flow rate control structure is connected to the data output ends of a first correspondence database and a second correspondence database;

[0013] The first correspondence database is a correspondence database between the usage time of the storage cavity and the ratio of the ion implantation process gas and the protective gas inside the storage cavity, and the second correspondence database is a correspondence database between the ratio of the ion implantation process gas and the protective gas inside the storage cavity and the tungsten content inside the storage cavity;

[0014] The flow rate control structure controls the flow rates of the ion implantation process gas entering through the first intake passage and the protective gas entering through the second intake passage into the storage cavity, so that the actual ratio of the ion implantation process gas and the protective gas inside the storage cavity output by the first correspondence database is adjusted to the expected ratio of the ion implantation process gas and the protective gas inside the storage cavity corresponding to the minimum tungsten content output by the second correspondence database.

[0015] Optionally, the ion implantation process gas includes any one or any combination of GeF4, BF3, AsH3, PH3, CO2, or CO.

[0016] Optionally, the protective gas is a gas including hydrogen ions.

[0017] Optionally, the gas mixing structure is a structure that can form forced convection within the storage cavity.

[0018] Optionally, the gas mixing structure is one or more rotatable fans.

[0019] Optionally, the blade material of the fan is ceramic.

[0020] Optionally, the fan is located between the first intake channel and the outlet channel, and the fan is also located between the second intake channel and the outlet channel.

[0021] Optionally, the outer shell material of the storage cavity is stainless steel.

[0022] In a second aspect, the present invention provides an ion implantation device. The ion implantation device uses the ion source provided by any one of the above semiconductor process apparatuses. The outlet channel of the semiconductor process apparatus is connected to the process chamber of the ion implantation device to introduce the mixed gas into the process chamber of the ion implantation device.

[0023] As described above, the semiconductor process apparatus and the ion implantation device of the present invention have the following beneficial effects:

[0024] By controlling the intake gas flow rates of the first intake channel and the second intake channel, the present invention minimizes the dissociation metal contamination generated by the tungsten on the inner wall of the storage cavity and the introduced halogen, thereby improving the cleanliness of the ion source provided by the outlet channel, increasing the yield and product reliability of the ion implantation process, and reducing the need for monitoring dissociation metal contamination.

[0025] By providing a gas mixing structure, the present invention fully mixes the introduced gas, further reducing the possibility of dissociation metal contamination generated by the introduced halogen and the tungsten on the inner wall of the storage cavity.

[0026] By setting the position of the fan, the present invention further ensures the gas mixing effect.

[0027] By setting the outer shell material of the storage cavity, the present invention avoids deformation of the storage cavity and improves the structural stability. Description of the Drawings

[0028] Figure 1 Shown is a perspective view schematic diagram of the semiconductor process apparatus during application of the present invention.

[0029] Figure 2 Shown is a front view schematic diagram of the semiconductor process apparatus of the present invention.

[0030] Figure 3 Shown is a top view schematic diagram of the semiconductor process apparatus of the present invention.

[0031] Figure 4 It shows a partial correspondence table of the usage time and the actual gas ratio in the first correspondence database of the semiconductor process device in the present utility model.

[0032] Figure 5 It shows a partial correspondence table of the gas ratio and the tungsten content in the storage cavity in the second correspondence database of the semiconductor process device in the present utility model.

[0033] Description of component labels

[0034] 10. Storage cavity; 11. Gas mixing structure; 12. Blower fan; 13. Ion implantation process chamber; 14. First correspondence database; 15. Second correspondence database; 16. Motor; 17. Switch valve; 18. Conductive connection wire; 21. First air inlet channel; 22. Second air inlet channel; 23. Air outlet channel; 24. Flow rate control structure; 25. First gas cylinder; 26. Second gas cylinder. Detailed implementation manners

[0035] The following uses specific specific examples to illustrate the implementation manners of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.

[0036] When detailing the embodiments of the present utility model, for the convenience of description, the schematic diagrams showing the device structure will be enlarged locally not in accordance with the general ratio, and the schematic diagrams are only examples and should not limit the protection scope of the present utility model here. In addition, in actual production, three-dimensional spatial dimensions including length, width and depth should be included.

[0037] For the convenience of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on" etc. may be used here to describe the relationship between an element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to include other directions of the device in use or operation besides the directions depicted in the drawings.

[0038] In the context of the present application, the structure where the first feature is "above" the second feature may include an embodiment where the first and second features are formed in direct contact, and may also include an embodiment where additional features are formed between the first and second features such that the first and second features may not be in direct contact.

[0039] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Therefore, only the components related to the present utility model are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0040] As Figures 1 - 3 shown, the present utility model provides a semiconductor process device, wherein Figure 1 is a perspective view of the semiconductor process device during application, Figure 2 is a front view of the semiconductor process device, Figure 3 is a top view of the semiconductor process device; the semiconductor process device includes: a storage cavity 10, a first intake channel 21, a second intake channel 22, an exhaust channel 23, a flow rate control structure 24, and a gas mixing structure 11; the inner wall material of the storage cavity 10 includes tungsten;

[0041] Both the first intake channel 21 and the second intake channel 22 are in communication with the storage cavity 10. The first intake channel 21 is used to introduce an ion implantation process gas containing halogen, and the second intake channel 22 is used to introduce a protective gas; the gas mixing structure 11 is located inside the storage cavity 10 and is used to mix the ion implantation process gas introduced through the first intake channel 21 and the protective gas introduced through the second intake channel 22; the exhaust channel 23 is in communication with the storage cavity 10 and is used to discharge the gas mixed by the gas mixing structure 11 inside the storage cavity 10 from the storage cavity 10 to the ion implantation process chamber 13;

[0042] The flow rate control structure 24 is used to control in real time the flow rate of the ion implantation process gas entering through the first intake channel 21 and the protective gas of the second intake channel 22 into the storage cavity 10, so as to control in real time the ratio of the ion implantation process gas and the protective gas inside the storage cavity 10.

[0043] In the prior art, as the critical dimension of semiconductor process technology becomes smaller and smaller, the metal contamination brought about during the ion implantation process has increasingly become a key factor restricting chip performance, yield, and reliability. The main means of reducing metal contamination in ion implantation in the prior art all focus on the improvement of metal components in ion implantation equipment, which can be roughly divided into the following three aspects: 1) adding a protective layer on the basis of existing metal components to prevent the direct bombardment of the ion beam on the surface of the metal material and reduce the sputtering process; 2) replacing the ion source cavity material with other metal materials with a large difference in mass-to-charge ratio from the implanted element; 3) replacing the metal material of existing components with non-metal materials. However, the above means can only solve the metal contamination caused by ion beam sputtering and cannot solve the dissociation metal contamination caused by physical and chemical reactions in the ion source cavity. And the dissociation metal contamination often enters the wafer interior along with the ion beam, resulting in the drift of wafer electrical characteristic parameters, yield loss, and even reliability failure; at the same time, due to the characteristics of strong concealment, great difficulty in prevention, and serious harm of dissociation metal contamination, it can only be detected in regular metal contamination tests and is difficult to be detected and corrected during daily production. Therefore, it greatly increases the maintenance cost of ion implantation equipment and reduces the maintenance efficiency.

[0044] The utility model pre-adjusts the ratio between the ion implantation process gas and the protective gas entering the storage cavity 10 by controlling the inlet gas flow rates of the first air inlet channel 21 and the second air inlet channel 22, so that the protective gas can inhibit the halogen cycle effect between the ion implantation process gas and the inner wall of the storage cavity 10, thereby controlling the minimum dissociation metal contamination generated by the tungsten on the inner wall of the storage cavity 10 and the introduced halogen, improving the cleanliness of the ion source provided by the air outlet channel 23, avoiding providing an ion source containing more dissociation metal contamination to the ion implantation process chamber 13, and improving the yield and product reliability of the ion implantation process; at the same time, by cooperating with the gas mixing structure 11 to mix the ion implantation process gas and the protective gas, the protective gas can better inhibit the halogen cycle reaction between the ion implantation process gas and the tungsten on the inner wall of the storage cavity 10, further improving the cleanliness of the ion source provided by the storage cavity 10 to the ion implantation process chamber 13; in addition, since the dissociation metal contamination generated in the storage cavity 10 is controlled to be the least by adjustment, the requirement for monitoring dissociation metal contamination can be reduced, the overall production efficiency can be improved, and the maintenance cost can be reduced.

[0045] In one embodiment, as Figure 1 shown, a switch valve 17 is provided in the air outlet channel 23, and whether to introduce the mixed gas from the storage cavity 10 into the ion implantation process chamber 13 is controlled by the switch valve 17.

[0046] In one embodiment, as Figures 1 - 2As shown, the first intake passage 21 communicates with the first gas cylinder 25, and the first gas cylinder 25 stores an ion implantation process gas; the second intake passage 22 communicates with the second gas cylinder 26, and the second gas cylinder 26 stores a protective gas.

[0047] In one embodiment, the flow rate control structure 24 is connected to the data output ends of the first correspondence database 14 and the second correspondence database 15;

[0048] As Figure 4 shown, the first correspondence database 14 is a correspondence database between the usage time of the storage cavity 10 and the ratio of the ion implantation process gas and the protective gas in the storage cavity 10; as Figure 5 shown, the second correspondence database 15 is a correspondence database between the ratio of the ion implantation process gas and the protective gas in the storage cavity 10 and the tungsten content in the storage cavity 10;

[0049] The flow rate control structure 24 controls the flow rates of the ion implantation process gas entering through the first intake passage 21 and the protective gas of the second intake passage 22 into the storage cavity 10, so that the actual ratio of the ion implantation process gas and the protective gas in the storage cavity 10 output from the first correspondence database 14 is adjusted to the expected ratio of the ion implantation process gas and the protective gas in the storage cavity 10 corresponding to the minimum tungsten content output from the second correspondence database 15.

[0050] The present utility model combines the actual ratio output from the first correspondence database and the expected ratio in the second correspondence database 15, and feedback-controls the actual ratio to a preset ratio through the flow rate control structure 24, so as to better minimize the dissociation metal pollution in real time, further ensure the cleanliness of the ion source provided to the ion implantation process chamber 13, and ensure the yield of the ion implantation process.

[0051] In one embodiment, the flow rate control structure 24 is electrically connected to the first intake passage 21, the second intake passage 22, the first correspondence database 14, and the second correspondence database 15 through a conductive connection wire 18 for signal transmission.

[0052] Specifically, the smaller the tungsten content in the storage cavity 10, the less the dissociation metal pollution generated in the storage cavity 10.

[0053] Specifically, the flow rate control structure 24 can adjust the actual ratio of the ion implantation process gas and the protective gas in the storage cavity 10 to be equal to the expected ratio, or the difference between the actual ratio and the expected ratio is less than a preset difference, which can be set according to specific application requirements and is within the protection scope of the present utility model.

[0054] In one embodiment, the first correspondence database 14 is an actual ratio AI database. As Figure 4 shown, a correspondence database between the usage time of the storage cavity 10 and the ratio of the ion implantation process gas and the protective gas in the storage cavity 10 is obtained based on experiments, and the actual ratio of the ion implantation process gas and the protective gas in the storage cavity 10 corresponding to the actual usage time of the storage cavity 10 monitored in real time can be output, so as to dynamically adjust the flow rates of the ion implantation process gas entering through the first intake channel 21 and the protective gas of the second intake channel 22 into the storage cavity 10 through the flow rate control structure 24. Specifically, Figure 4 the ion implantation process gas in

[0055] In one embodiment, as Figure 5 shown, the second correspondence database 15 is a correspondence database between the tungsten content in the storage cavity 10 and the ratio of the ion implantation process gas and the protective gas in the storage cavity 10 obtained based on experiments, so as to obtain the ratio of the ion implantation process gas and the protective gas in the storage cavity 10 corresponding to the least tungsten content as the expected ratio through calculation and processing. Specifically, as Figure 5 shown, when the gas ratio corresponding to the least tungsten content is 1:1.1, the ratio of the ion implantation process gas and the protective gas is 1:1.1 as the expected ratio.

[0056] In one embodiment, the ion implantation process gas includes any one or more of GeF4, BF3, AsH3, PH3, CO2 or CO in any combination.

[0057] Specifically, the ion implantation process gas can also be other suitable gases containing halogens, which are all within the protection scope of the present utility model.

[0058] In one embodiment, the protective gas is a gas including hydrogen ions.

[0059] The present utility model uses a protective gas including hydrogen ions to improve the effect of suppressing the halogen circulation effect in the storage cavity 10 and further reduce the dissociation metal contamination provided to the ion implantation process chamber 13.

[0060] In one embodiment, the protective gas includes, but is not limited to, any one or more of H2, Xe, Ar, and Xe, and any combination thereof. Specifically, the protective gas may also include other suitable gases, all within the protection scope of the present utility model.

[0061] Preferably, the protective gas also serves as an ion implantation process gas, and the ion implantation process gas is introduced into the ion implantation process chamber 13 from the storage chamber 10.

[0062] In one embodiment, the gas mixing structure 11 is a structure that can form forced convection in the storage chamber 10.

[0063] In one embodiment, the gas mixing structure 11 is one or more rotatable fans 12.

[0064] By setting the rotatable fan 12 as the gas mixing structure 11, the present utility model has a simple structure and is convenient for installation, which is conducive to widespread application in actual production.

[0065] In one embodiment, as Figure 2 shown, the fan 12 is driven by a motor 16.

[0066] In one embodiment, the blade material of the fan 12 is ceramic.

[0067] In one embodiment, the fan 12 is located between the first intake channel 21 and the outlet channel 23, and the fan 12 is also located between the second intake channel 22 and the outlet channel 23. Specifically, the position of the fan 12 can also be designed specifically according to the specific structure of the storage chamber 10 to maximize the gas mixing effect, all within the protection scope of the present utility model.

[0068] By setting the fan 12 between the first intake channel 21, the second intake channel 22, and the outlet channel 23, the present utility model can maximize the gas mixing effect of the fan 12, thereby further reducing the dissociation metal contamination generated in the storage chamber 10 and improving the cleanliness provided to the ion implantation process chamber 13.

[0069] In one embodiment, as Figures 1 - 3 shown, the gas mixing structure 11 includes two rotatable fans 12. Specifically, the number of the fans 12 can also be selected as other suitable quantities according to requirements, all within the protection scope of the present utility model.

[0070] In one embodiment, the outer shell material of the storage chamber 10 is stainless steel.

[0071] By setting the outer shell material of the storage cavity 10 to corrosion-resistant stainless steel, the present utility model can prevent the storage cavity 10 from deforming, thereby further reducing the possibility of more dissociation metal contamination caused by the deformation of the storage cavity 10.

[0072] As Figure 1 shown, the present utility model further provides an ion implantation device. The ion implantation device uses the ion source provided by any one of the above semiconductor process devices. The gas outlet channel 23 of the semiconductor process device is communicated with the process chamber of the ion implantation device to introduce the mixed gas into the process chamber of the ion implantation device.

[0073] In one embodiment, the method of using the semiconductor process device to provide an ion source for the ion implantation device includes: placing the ion implantation device in an empty machine state and querying the ion source usage time of the storage cavity 10 at the machine end; inputting the ion source usage time into the first correspondence database 14, and the first correspondence database 14 outputs the actual ratio of the ion implantation process gas and the protective gas in the storage cavity 10 to the flow rate control structure 24; the second correspondence database 15 outputs the expected ratio of the ion implantation process gas and the protective gas in the storage cavity 10 corresponding to the minimum tungsten content to the flow rate control structure 24. The flow rate control structure 24 controls the flow rates of the ion implantation process gas entering through the first intake channel 21 and the protective gas entering through the second intake channel 22 into the storage cavity 10 according to the obtained actual ratio and expected ratio, so that the actual ratio of the ion implantation process gas and the protective gas in the storage cavity 10 is equal to or close to the expected ratio; driving the fan 12 with the blade material of ceramic by the motor 16 to ensure that the ion implantation process gas and the protective gas are evenly mixed in the storage cavity 10; the evenly mixed gas is transported from the gas outlet channel 23 to the ion implantation process chamber 13 of the ion implantation device; the mixed gas introduced into the storage cavity 10 is dissociated in the ion implantation process chamber 13 source, and the ion implantation process starts, and finally the mixed gas is implanted into the wafer.

[0074] In summary, the semiconductor process device and the ion implantation device of the present utility model can control the inflow rates of the first intake channel and the second intake channel to minimize the dissociation metal contamination generated by the tungsten on the inner wall of the storage cavity and the introduced halogen, so as to improve the cleanliness of the ion source provided by the gas outlet channel, improve the yield and product reliability of the ion implantation process, and reduce the demand for monitoring dissociation metal contamination; at the same time, by setting a gas mixing structure, the introduced gas is fully mixed to further reduce the possibility of dissociation metal contamination generated by the introduced halogen and the tungsten on the inner wall of the storage cavity; in addition, by setting the position of the fan, the gas mixing effect is further ensured; finally, by setting the outer shell material of the storage cavity, the deformation of the storage cavity is avoided and the structural stability is improved.

[0075] Therefore, the utility model effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0076] The above embodiments are only illustrative of the principles and effects of the utility model, and are not intended to limit the utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the utility model. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the utility model should still be covered by the claims of the utility model.

Claims

1. A semiconductor process device, characterized in that, The semiconductor process device includes: a storage cavity, a first gas inlet channel, a second gas inlet channel, an outlet channel, a flow rate control structure, and a gas mixing structure; the inner wall material of the storage cavity contains tungsten; The first gas inlet channel and the second gas inlet channel are both connected to the storage cavity. The first gas inlet channel is used to introduce an ion implantation process gas containing halogen, and the second gas inlet channel is used to introduce a protective gas. The gas mixing structure is located inside the storage cavity and is used to mix the ion implantation process gas introduced through the first gas inlet channel and the protective gas introduced through the second gas inlet channel. The outlet channel is connected to the storage cavity and is used to discharge the gas mixed by the gas mixing structure in the storage cavity from the storage cavity to the ion implantation process chamber; The flow rate control structure is used to control in real time the flow rates of the ion implantation process gas entering through the first gas inlet channel and the protective gas entering through the second gas inlet channel into the storage cavity, so as to control in real time the ratio of the ion implantation process gas and the protective gas in the storage cavity.

2. The semiconductor processing apparatus according to claim 1, wherein: The flow rate control structure is connected to the data output ends of a first correspondence database and a second correspondence database; The first correspondence database is a correspondence database between the usage time of the storage cavity and the ratio of the ion implantation process gas and the protective gas in the storage cavity. The second correspondence database is a correspondence database between the ratio of the ion implantation process gas and the protective gas in the storage cavity and the tungsten content in the storage cavity; The flow rate control structure controls the flow rates of the ion implantation process gas entering through the first gas inlet channel and the protective gas entering through the second gas inlet channel into the storage cavity, so that the actual ratio of the ion implantation process gas and the protective gas in the storage cavity output from the first correspondence database is adjusted to the expected ratio of the ion implantation process gas and the protective gas in the storage cavity corresponding to the minimum tungsten content output from the second correspondence database.

3. The semiconductor processing apparatus according to claim 1, wherein: The ion implantation process gas includes any one or any combination of GeF4, BF3, AsH3, PH3, CO2, or CO.

4. The semiconductor processing apparatus according to claim 1, wherein: The protective gas is a gas including hydrogen ions.

5. The semiconductor processing apparatus according to claim 1, wherein: The gas mixing structure is a structure that can form forced convection in the storage cavity.

6. The semiconductor processing apparatus according to claim 5, wherein: The gas mixing structure is one or more rotatable fans.

7. The semiconductor processing apparatus according to claim 6, wherein: The blade material of the fan is ceramic.

8. The semiconductor processing apparatus according to claim 6, characterized in that: The fan is located at a position between the first gas inlet channel and the outlet channel, and the fan is also located at a position between the second gas inlet channel and the outlet channel.

9. The semiconductor processing apparatus according to claim 1, wherein: The outer shell material of the storage cavity is stainless steel.

10. An ion implantation device, characterized in that, The ion implantation equipment uses the semiconductor process device described in any one of claims 1-9 to provide an ion source. The outlet channel of the semiconductor process device is connected to the process chamber of the ion implantation equipment to introduce the mixed gas into the process chamber of the ion implantation equipment.

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