Single crystal furnace

Abstract

The utility model discloses a single crystal furnace, and belongs to the technical field of crystal growth. The single crystal furnace provided by the utility model comprises a deoxidizing device, the deoxidizing device comprises an air suction assembly, the air suction assembly comprises at least one air suction pipeline and at least one air suction ring, and the air suction pipeline comprises a first air suction sub-pipeline and a second air suction sub-pipeline which are detachably communicated; the first air suction sub-pipeline penetrates through a furnace cover of the single crystal furnace, and the second air suction sub-pipeline is communicated with the air suction ring; and the air suction ring is arranged on a heat shield in the single crystal furnace. In the embodiment of the invention, the gas suction assembly can directly suck away the impurity gas from the upper part of the crucible and take away the impurity gas on the crystal growth interface, so that the crystal pulling device has the beneficial effect of improving the crystal pulling quality.

Description

Technical Field

[0001] The present application belongs to the field of crystal growth technology, and specifically relates to a single crystal furnace. Background Art

[0002] With the rapid development of the solar energy industry, demand for monocrystalline silicon, a fundamental material for photovoltaic power generation, is increasing. The oxygen content of monocrystalline silicon is a key quality indicator. Excessive oxygen content is a key factor in the formation of numerous defects, affecting minority carrier lifetime and resistivity, hindering the preparation of subsequent battery products.

[0003] In actual production, the oxygen reduction method usually adopted is to blow argon gas downward along the water-cooled heat exchanger. The flowing argon gas carries away the oxygen and flows out of the single crystal furnace.

[0004] However, as the crystal diameter increases, the crystal itself blocks some of the argon gas, making it more difficult for the argon to carry away oxygen from the crystallization area below the crystal. Furthermore, the argon gas inlet is located at a higher position, and when it enters the crystal growth interface, it is affected by the resistance along the way, causing the gas flow rate to decrease, affecting the oxygen content. Furthermore, the gas above the silicon melt surface is heated and rises along the crystal, forming an impact with the argon gas, reducing the argon flow rate and thus affecting the oxygen content. Utility Model Content

[0005] The purpose of the embodiments of the present application is to provide a single crystal furnace that can solve or at least partially solve the above technical problems.

[0006] In order to solve the above technical problems, the present application provides a single crystal furnace, comprising a deoxygenation device, the deoxygenation device comprising an air intake assembly, the air intake assembly comprising: at least one air intake pipeline and at least one air intake ring; the air intake pipeline comprises a first air intake sub-pipeline and a second air intake sub-pipeline that are detachably connected; the first air intake sub-pipeline passes through the furnace cover of the single crystal furnace, and the second air intake sub-pipeline is connected to the air intake ring; the air intake ring is installed on the heat shield inside the single crystal furnace.

[0007] In the embodiment of the present application, specifically, the suction component can directly suck away the impurity gas from above the crucible, quickly take away the impurity gas on the crystal growth interface, and prevent oxygen from entering the crystal as the crystal grows, thereby affecting the quality of the crystal. At the same time, sucking away the impurity gas from above the crucible also has the beneficial effect of lowering the temperature of the crystal growth interface. In actual application, the impurity gas enters the suction ring from the suction port, and then flows out of the furnace body from the exhaust port, taking away the oxygen impurities in the furnace, preventing oxygen from entering the crystal as the crystal grows, thereby affecting the quality of the crystal. It can be understood that the first suction sub-pipeline and the second suction sub-pipeline are connected through a pipe joint, which can achieve the beneficial effect of quick disassembly and replacement of the suction ring. Furthermore, in the embodiment of the present application, a stable airflow loop can be formed at the crystal growth interface by using a combination of blowing and suction, so that the airflow can flow stably in a specific direction, so that more oxygen impurities are discharged from the furnace with the airflow, which is beneficial to taking away more oxygen impurities with less argon consumption, thereby reducing the oxygen content. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 This is a schematic diagram of the structure of a single crystal furnace in an embodiment of the present application;

[0009] Figure 2 1 is a schematic diagram of the structure of the air intake assembly in an embodiment of the present application;

[0010] Figure 3 This is a schematic structural diagram of an air blowing cooling assembly in an embodiment of the present application;

[0011] Figure 4 This is a schematic cross-sectional view of a portion of the structure of an air blowing cooling assembly in an embodiment of the present application;

[0012] Figure 5 This is another structural diagram of the air blowing cooling assembly in the embodiment of the present application;

[0013] Figure 6 This is a schematic diagram of airflow when the crucible is in a low position in an embodiment of the present application;

[0014] Figure 7 Schematic diagram of airflow when the crucible is at a high position in an embodiment of the present application.

[0015] Description of reference numerals:

[0016] 10. Furnace body; 11. Air inlet; 12. Air outlet; 20. Air suction assembly; 21. Air intake; 22. Air exhaust; 23. Air suction pipeline; 231. First air suction sub-pipeline; 232. Second air suction sub-pipeline; 233. Pipeline joint; 24. Air suction ring; 241. First body; 30. Air blowing cooling assembly; 31. Air blowing port; 32. Air inlet; 33. Air blowing pipeline; 331. First air blowing sub-pipeline; 332. Second air blowing sub-pipeline; 34. Air blowing ring; 341. Second body; 35. Heat exchanger; 351. Cooling pipeline; 352. Cooling body; 3521. Spiral flow channel; 36. Heat shield; 361. Inner liner; 362. Outer liner. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0018] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0019] The single crystal furnace provided in the embodiment of the present application is described in detail below with reference to the accompanying drawings through specific embodiments and their application scenarios.

[0020] A crucible is provided in the inner cavity of the single crystal furnace, and liquid molten silicon can be placed in the crucible. In actual application, the crystal gradually grows from the crucible. The air inlet 11 on the single crystal furnace body 10 is used to introduce argon into the inner cavity and blow it downward so that the oxygen at the crystal growth interface is carried away by the argon. The air outlet 12 on the single crystal furnace body 10 is used to allow the oxygen carried away by the argon in the inner cavity and the impurity gas formed by other mixed gases to flow out of the inner cavity, so as to provide a relatively suitable environment for crystal growth. The above-mentioned setting can take away a certain amount of oxygen at the crystal growth interface, but it is limited by the obstruction of the crystal and the long argon flow path, the flow rate is reduced, and the gas above the liquid molten silicon will rise along the crystal when heated, forming a collision with the argon gas, reducing the argon flow rate, affecting the oxygen content, and thus affecting the quality of the crystal. In order to reduce the loss of argon along the way, and also to provide a good crystal pulling environment for the crystal growth interface, the present application provides the following single crystal furnace.

[0021] As an alternative embodiment, see Figures 1 to 7 , provides a single crystal furnace, including a deoxygenation device, the deoxygenation device includes an air intake assembly 20, the air intake assembly 20 includes: at least one air intake pipeline 23 and at least one air intake ring 24; the air intake pipeline 23 includes a first air intake sub-pipeline 231 and a second air intake sub-pipeline 232 that are detachably connected; the first air intake sub-pipeline 231 passes through the furnace cover of the single crystal furnace, and the second air intake sub-pipeline 232 is connected to the air intake ring 24; the air intake ring 24 is installed on the heat shield 36 in the single crystal furnace.

[0022] Specifically, the suction component 20 can directly suck away the impurity gas from above the crucible, quickly take away the impurity gas on the crystal growth interface, and prevent oxygen from entering the interior of the crystal as the crystal grows, thereby affecting the quality of the crystal. At the same time, sucking away the impurity gas from above the crucible also has the beneficial effect of lowering the temperature of the crystal growth interface. In actual applications, the impurity gas enters the suction ring 24 from the suction port 21, flows through the second suction sub-pipeline 232 and the first suction sub-pipeline 231 in sequence, and then flows out of the furnace body 10 from the exhaust port 22, taking away the oxygen impurities in the furnace, and preventing oxygen from entering the interior of the crystal as the crystal grows, thereby affecting the quality of the crystal. It can be understood that the first suction sub-pipeline 231 and the second suction sub-pipeline 232 are connected through the pipe joint 233, and can also achieve the beneficial effect of quick disassembly and easy replacement.

[0023] Optionally, in an embodiment of the present application, the heat shield 36 includes an inner liner 361 and an outer liner 362, and the inner liner 361 is located inside the outer liner 362. The outer liner 362 includes a first section and a second section connected to each other, and the radial dimension of the second section is smaller than the radial dimension of the first section. The air intake ring 24 is fixedly connected to the second section, and the air intake ring 24 can move with the heat shield 36. Specifically, in this embodiment, the first section is a straight wall section, and the second section is an inclined wall section. The cross-sectional shape of the inclined wall section along the axial direction of the heat shield 36 can be conical or arc-shaped. In this embodiment, the cross-sectional shape of the lower end of the inclined wall section is a cone with openings at both ends. The air intake ring 24 is fixedly connected to the inclined wall section, and the air intake ring 24 can move with the heat shield 36.

[0024] In the embodiment of the present application, the suction ring 24 and the heat shield 36 are fixedly connected. When the heat shield 36 moves up and down in the axial direction of the single crystal furnace, the suction ring 24 can also move with it, ensuring that the suction ring 24 is always suspended above the crucible to extract impurity gases as close to the crucible as possible. At the same time, the suction ring 24 moves with the heat shield 36, which can reduce the suction ring 24's impact on the airflow between the heat shield 36 and the melt surface. It has the effect of quickly extracting impurity gases, maintaining the crystal pulling environment at the crystal growth interface in the crucible, and preventing oxygen from entering the crystal as the crystal grows, thereby affecting the crystal quality. At the same time, it also has the beneficial effect of reducing the temperature of the crystal growth interface.

[0025] Optionally, the intake ring 24 includes a first body 241 and an intake port 21; a first cavity is provided inside the first body 241, and the intake port 21 is opened at the bottom end surface of the first body 241; impurity gas enters the first cavity through the intake port 21 and is discharged through the intake pipe 23.

[0026] Specifically, in the embodiment of the present application, an exhaust port 22 is provided at the end of the intake pipe 23, and the exhaust port 22 is provided at the end of the first intake sub-pipe 231 away from the pipe joint 233. There is a first cavity inside the first body 241, and the intake port 21 is opened in the first body 241. Impurity gas can enter the first cavity through the intake port 21, flow through the second intake sub-pipe 232 and the first intake sub-pipe 231 in sequence, and then flow out from the exhaust port 22.

[0027] In the embodiment of the present application, during the melt and crystal growth process, the heater in the single crystal furnace is operating. As the crucible is heated by the heater, oxygen impurities are decomposed from the inner wall of the crucible at high temperature and float on the surface of the liquid molten silicon. If not discharged in time, they are likely to solidify into the crystal as the crystal grows, thereby reducing the quality of the crystal. While the heater is turned on, an air intake ring 24 is suspended above the crystal growth interface, and the air intake port 21 and the air exhaust port 22 are opened at the same time. Argon gas enters the single crystal furnace cavity through the air inlet 11 on the furnace body 10. The air intake ring 24 sucks the impurity gas on the crystal growth interface. The impurity gas enters the air intake and flows to the air intake line 23. It flows out of the furnace body 10 through the exhaust port 22 along the air intake line 23, thereby reducing the oxygen content of the crystal.

[0028] It should be noted that the intake ring 24 is connected to the outer liner 362. When the outer liner 362 moves up and down along the axial direction of the single crystal furnace, the intake ring 24 also moves accordingly, ensuring as much as possible that the intake ring 24 is always suspended above the crystal growth interface to absorb impurity gases at the crystal growth interface.

[0029] It should also be noted that valves can be set at the exhaust port 22 and the outlet hole 12 of the furnace body. By adjusting the valves, the flow of the exhaust port 22 or the outlet hole 12 can be controlled. For example, controlling the valve flow at the outlet hole 12 can form a negative pressure on the intake ring 24, making it easier for the intake ring 24 to absorb impurity gases.

[0030] It should be noted that the exhaust port 22 can be connected to an external vacuum pump to form a negative pressure in the furnace, so as to facilitate the impurity gas to flow out of the furnace body 10 along the getter assembly 20 .

[0031] Furthermore, when the crucible is in the low position, as Figure 6 As shown, the resistance of the gas path (pointed by the arrow in the figure) is small, and the valve opening can be adjusted to a smaller flow rate to allow the impurity gas to be discharged quickly; when the crucible is at a high position, such as Figure 7 As shown, the air path (pointed by the arrow in the figure) has a large resistance, and the valve opening can be adjusted to make

[0032] Impurity gases are discharged quickly.

[0033] Optionally, in the embodiment of the present application, there are multiple air intake ports 21 , and the multiple air intake ports 21 are evenly opened on a side of the first body 241 facing the crucible in the single crystal furnace.

[0034] In the embodiment of the present application, the number of suction ports 21 can be multiple. It is understood that the provision of multiple suction ports 21 allows for simultaneous suction, which has the beneficial effect of improving the suction efficiency of the suction ring 24. Furthermore, the uniform distribution of multiple suction ports 21 can improve the uniformity of suction at the crystal growth interface, preventing suction at a single location from causing fluctuations in the crystal growth interface within the crucible and affecting crystal pulling.

[0035] Furthermore, the air intake port 21 is opened at a position on the side of the first body 241 facing the crucible in the single crystal furnace, so that the air intake port 21 and the crystal growth interface are arranged relative to each other, which facilitates the impurity gas to enter the first body 241 directly from the air intake port 21, which has the beneficial effect of improving the air intake efficiency.

[0036] Optionally, in this embodiment of the present application, there are multiple second air intake sub-pipelines 232 , which are evenly arranged around the axis of the air intake ring 24 . The multiple second air intake sub-pipelines 232 are detachably connected to the first air intake sub-pipeline 231 via a pipe connector 233 .

[0037] In the embodiment of the present application, the impurity gas after entering the first body 241 flows along the intake pipe 23 to the outside of the furnace body 10. The provision of multiple intake pipes 23 can speed up the rate at which the impurity gas is discharged from the furnace body 10, facilitate the timely removal of the impurity gas, and has the beneficial effect of preventing oxygen from entering the crystal during the crystal growth process.

[0038] Furthermore, the second air intake sub-pipes 232 are evenly arranged around the axis of the air intake ring 24, allowing impurity gases entering the air intake ring 24 to enter the nearest second air intake sub-pipe 232 without having to circulate within the first body 241, further improving exhaust efficiency and stability. It should be noted that the number of second air intake sub-pipes 232 can be two, three, or even four; this is not a limitation in this embodiment. When there are two second air intake sub-pipes 232, they are arranged opposite each other around the axis of the air intake ring 24.

[0039] Optionally, based on the above embodiment or some other optional embodiments, the embodiment of the present application is provided with an air suction component 20 and an air blowing cooling component 30 in the furnace body 10, and the air blowing cooling component 30 is provided on the inner side of the heat shield 36. Specifically, the air suction component 20 is provided to suck impurity gas from the crystal growth interface, wherein the impurity gas contains oxygen. Suck the impurity gas at the crystal growth interface, which can prevent the oxygen in the impurity gas from entering the crystal during the crystal growth process, resulting in excessively high oxygen content in the crystal, and has the beneficial effect of reducing the oxygen content in the crystal and improving the crystal quality. The air blowing cooling component 30 is provided to blow argon gas into the crystal growth interface. The blowing of argon gas can keep the crystal growth interface in an argon environment at all times, take away the oxygen on the crystal growth interface, and prevent oxygen from entering the crystal as the crystal grows, thereby affecting the crystal quality. At the same time, blowing argon gas directly into the crystal growth interface also has the beneficial effect of reducing the temperature of the crystal growth interface.

[0040] In the embodiments of the present application, the combination of blowing and suctioning has the following advantages over blowing alone: the combination of blowing and suctioning can form a stable airflow loop at the crystal growth interface, allowing the airflow to flow stably in a specific direction, facilitating the discharge of more oxygen impurities from the furnace with the airflow, thereby facilitating the removal of more oxygen impurities with less argon consumption, thereby reducing the oxygen content. If only a blowing device is provided without a suction device, the gas above the silicon melt surface will rise along the crystal due to heating, forming an impact with the argon gas, reducing the argon flow rate and easily causing airflow turbulence, which is not conducive to reducing the oxygen content. If the argon flow rate of the air inlet 11 is further increased to counteract the airflow impact, it will easily cause disturbances in the liquid surface, preventing the crystal from forming.

[0041] In the embodiment of the present application, two sets of argon gas intake and impurity removal gas circulation are realized through the air inlet 11-air outlet 12, and the air blowing cooling component 30-air suction component 20, which can effectively reduce the oxygen content in the single crystal furnace. In particular, the air blowing cooling component 30-air suction component 20 directly acts on the crystal growth interface, which can greatly reduce the oxygen impurities in the crystal, and has the beneficial effects of improving crystal quality, accelerating crystal cooling, and increasing crystal growth rate.

[0042] It can be understood that the provision of the air blowing cooling assembly 30 avoids the loss of argon along the way and a large amount of collision with hot gas, which has the beneficial effect of improving the utilization rate of argon.

[0043] In the embodiment of the present application, the air blowing cooling assembly 30 includes at least one air blowing pipe 33 and an air blowing ring 34. The air blowing pipe 33 is arranged inside the heat exchanger 35 of the single crystal furnace. The air blowing pipe 33 and the air blowing ring 34 are connected. The air blowing pipe 33 and the air blowing ring 34 are located above the crucible in the single crystal furnace. The air inlet 32 is arranged at the end of the air blowing pipe 33 away from the air blowing ring 34; the air blowing ring 34 includes a second body 341 and an air blowing port 31. The second body 341 has a second cavity inside, and the air blowing port 31 is opened in the second body 341. Argon gas can enter the air blowing pipe 33 through the air inlet 32, flow through the air blowing ring 34, and then flow from the air blowing port 31 to the top of the crucible in the single crystal furnace.

[0044] Furthermore, the air blowing line 33 is connected to the air blowing ring 34, and an air blowing hole is formed on the inner side of the second body 341. In actual use, argon gas enters the air blowing line 33 through the air inlet 32, then enters the air blowing ring 34, and is blown out through the air blowing hole to the crystal growth interface, thereby keeping the crystal growth interface in an argon environment and blowing away oxygen impurities, thereby achieving cooling and deoxygenation effects.

[0045] The blowing pipe 33 is integrated inside the heat exchanger 35 and is surrounded by the cooling medium. It can be understood that since the air inlet pipe is surrounded by the cooling medium, during the crystal growth process, the crystal and the cooling medium directly exchange heat without being affected by the air inlet pipe, so that the crystal has good cooling efficiency, thereby improving the crystal pulling speed.

[0046] In the embodiment of the present application, argon gas can be blown directly to the crystal growth interface. During the crystal growth process, argon gas can directly blow the growing crystal, which can effectively reduce the oxygen content and temperature of the crystal growth interface and the crystal, while accelerating the cooling of the crystal and increasing the crystal pulling speed, which has the beneficial effect of improving the crystal quality.

[0047] Specifically, in the embodiment of the present application, the heat exchanger 35 includes a cooling pipeline 351 and a cooling body 352. The cooling pipeline 351 and the cooling body 352 are connected, and the cooling pipeline 351 is arranged on a side of the cooling body 352 near the air inlet 11. The air blowing pipeline 33 includes a first air blowing sub-pipeline 331 and a second air blowing sub-pipeline 332. The first air blowing sub-pipeline 331 is inserted into the cooling pipeline 351 along the extension direction of the cooling pipeline 351, and the first air blowing sub-pipeline 331 and the cooling pipeline 351 are spaced apart from each other. The second air blowing sub-pipeline 332 is arranged in the cooling body 352 and connected to each other. The air inlet 32 is arranged at the end of the first air blowing sub-pipeline 331 away from the second air blowing sub-pipeline 332. In this embodiment, the blowing ring 34 is disposed within the cooling body 352. Specifically, cooling water channels are provided on both the upper and lower sides of the blowing ring 34 along the axial direction of the cooling body 352. Specifically, in this embodiment, spiral flow channels 3521 are provided on both the upper and lower sides of the blowing ring 34 so that the periphery of the blowing ring is within the cooling water channel.

[0048] In an embodiment of the present application, the first blowing sub-pipeline 331 is integrated in the cooling pipeline 351, and the second blowing sub-pipeline 332 is integrated in the cooling cavity. It can be understood that the first blowing sub-pipeline 331, the second blowing sub-pipeline 332, and the blowing ring 34 are all surrounded by the cooling medium. Since the air inlet pipe is surrounded by the cooling medium, during the crystal growth process, the crystal and the cooling medium directly exchange heat without being affected by the air inlet pipe, so that the crystal has good cooling efficiency, thereby improving the crystal pulling speed.

[0049] In practice, when the heater is turned on, the air intake 21, exhaust 22, blow port 31, and air inlet 32 are also opened. Argon enters the single crystal furnace through the air inlet 32 and the air inlet 11, while impurity gases exit the single crystal furnace through the exhaust 22 and the air outlet 12. Argon entering from the air inlet 32 sweeps through the crystal through the blow port 31, then enters the crystal growth interface through the gap between the crystal and the inner wall of the heat exchanger 35, cooling the crystal and reducing the oxygen content at the crystal growth interface.

[0050] Optionally, in an embodiment of the present application, the cooling body 352 is a cylindrical structure, and a spiral flow channel 3521 is provided inside the cooling body 352 . The spiral flow channel 3521 is arranged around the axis of the heat exchanger, and the second blowing sub-pipeline 332 is inserted into the spiral flow channel 3521 along the axial direction of the cooling body 352 .

[0051] In the embodiment of the present application, the setting of the spiral flow channel 3521 is conducive to the cooling of the crystal growth environment by the cooling body 352, wherein the second blowing sub-flow channel is inserted into the spiral flow channel 3521 and is independent of the spiral flow channel 3521. It can be understood that the second blowing sub-flow channel does not interfere with the spiral flow channel 3521, and the spiral flow channel 3521 and the second blowing sub-flow channel can both operate normally, and the cooling medium in the spiral flow channel 3521 also has a cooling effect on the argon in the second blowing sub-flow channel, so that the temperature of the argon blown out from the blowing ring 34 is reduced, which has the beneficial effect of improving the crystal pulling efficiency.

[0052] Optionally, in the embodiment of the present application, there are multiple air ports 31, each of which is evenly distributed on one side of the second body 341 facing the axis of the air blowing ring 34. Furthermore, the axial direction of the air ports 31 intersects with the radial direction of the air blowing ring 34, and the axis of the air ports 31 extends away from the air blowing pipe 33. Specifically, along the direction from the outside to the inside of the air blowing ring 34, the axis of the air ports 31 extends away from the air inlet 11 and intersects with the crucible of the single crystal furnace.

[0053] In the embodiment of the present application, the number of blowing holes can be multiple. It can be understood that the setting of multiple blowing holes can be used for blowing at the same time, which has the beneficial effect of improving the blowing efficiency and blowing flow rate of the blowing ring 34. Furthermore, the multiple blowing holes opened evenly can improve the uniformity of blowing on the crystal growth interface, and prevent the beneficial effect of blowing on a single position causing fluctuations in the crystal growth interface in the crucible that affect crystal pulling. Furthermore, the blowing holes are opened on the side of the second body 341 facing the axis of the blowing ring 34, and the axis of the blowing port 31 is inclined downward. It can be understood that when the argon gas is blown out from the blowing port 31, it is blown toward the growing crystal and the crystal growth interface, so that the growing crystal and the crystal growth interface are always in an argon environment, which has the beneficial effect of accelerating crystal cooling, increasing the crystal pulling speed, and improving the crystal quality.

[0054] Optionally, in the embodiment of the present application, there are multiple second air blowing sub-pipelines 332, and the multiple second air blowing sub-pipelines 332 are evenly arranged around the axis of the air blowing ring 34. In an optional implementation, the multiple second air blowing sub-pipelines 332 are connected to the first air blowing sub-pipeline 331 through a pipe joint.

[0055] In the embodiment of the present application, argon gas enters the blowing pipe 33 and flows along the blowing pipe 33 to the blowing ring 34. The provision of multiple second blowing sub-pipelines 332 can speed up the rate at which argon gas enters the furnace body 10, thereby providing an argon gas environment for the growing crystal and the crystal growth interface, and has the beneficial effect of preventing oxygen from entering the crystal during the crystal growth process.

[0056] Furthermore, the second blowing sub-pipeline 332 is evenly arranged around the axis of the single crystal furnace, so that the argon gas entering the blowing ring 34 can enter a nearby blowing port 31 without having to move in the second body 341, further improving the blowing efficiency and blowing stability.

[0057] It should be noted that there can be two, three, or four second gas blowing sub-pipelines 332, which is not limited in this embodiment. When there are two second gas blowing sub-pipelines 332, the two gas blowing sub-pipelines 333 are disposed opposite to each other around the axis of the single crystal furnace.

[0058] Furthermore, the blowing ring 34 may be integrated into the bottom end of the cooling body 352 to form an annular cavity at the lower portion of the cooling body 352 .

[0059] It should be noted that, in this article, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or component comprising a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or component. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or component comprising the element. In addition, it should be noted that the scope of the methods and components in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0060] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A single crystal furnace, characterized in that: The deoxygenation device comprises an air suction component (20), and the air suction component (20) comprises: at least one air suction pipeline (23) and at least one air suction ring (24); The air intake pipeline (23) comprises a first air intake sub-pipeline (231) and a second air intake sub-pipeline (232) that are detachably connected; the first air intake sub-pipeline (231) passes through the furnace cover of the single crystal furnace, and the second air intake sub-pipeline (232) is connected to the air intake ring (24); The suction ring (24) is installed on a heat shield (36) in the single crystal furnace.

2. The single crystal furnace according to claim 1, characterized in that: The air intake ring (24) is installed on the outside of the heat shield (36) in the single crystal furnace; the heat shield (36) includes an outer shell (362); the outer shell (362) includes a first section and a second section connected to each other, and the radial dimension of the second section is smaller than the radial dimension of the first section; the air intake ring (24) is fixedly connected to the second section, and the air intake ring (24) can move with the heat shield (36).

3. The single crystal furnace according to claim 1, characterized in that The air intake ring (24) comprises a first body (241) and an air intake port (21); a first cavity is provided inside the first body (241), and the air intake port (21) is opened in the first body (241) and communicates with the first cavity.

4. The single crystal furnace according to claim 3, characterized in that There are a plurality of air intake ports (21), and the plurality of air intake ports (21) are evenly arranged on a side of the first body (241) facing the crucible in the single crystal furnace.

5. The single crystal furnace according to claim 1, characterized in that: There are multiple second air suction sub-pipelines (232), and the multiple second air suction sub-pipelines (232) are evenly arranged around the axis of the air suction ring (24); The first air suction sub-pipeline (231) and the second air suction sub-pipeline (232) are connected via a pipe joint. (233) is detachably connected.

6. The single crystal furnace according to any one of claims 1 to 5, characterized in that: The deoxidation device further comprises an air blowing cooling assembly (30), wherein the air blowing cooling assembly (30) is arranged on the inner side of the heat shield (36); The single crystal furnace further comprises a heat exchanger (35) located inside the heat shield (36), the heat exchanger (35) comprising a cooling pipeline (351) and a cooling body (352) that are in communication with each other, the air blowing cooling assembly (30) comprising at least one air blowing pipeline (33) and an air blowing ring (34), the air blowing pipeline (33) and the air blowing ring (34) being in communication with each other; the air blowing pipeline (33) is arranged in the cooling pipeline (351); the air blowing ring (34) is arranged in the cooling body (352); Cooling water channels are provided on both the upper and lower sides of the blowing ring (34) along the axial direction of the cooling body (352).

7. The single crystal furnace according to claim 6, characterized in that: A spiral flow channel (3521) is provided in the cooling body (352); the spiral flow channel (3521) is arranged around the axis of the cooling body (352); and the air blowing pipeline (33) is arranged in the spiral flow channel (3521) along the axial direction of the cooling body (352).

8. The single crystal furnace according to claim 6, characterized in that: The blowing ring (34) comprises a second body (341) and a blowing port (31); the blowing port (31) is multiple in number, and the multiple blowing ports (31) are evenly opened on one side of the second body (341) facing the axis of the blowing ring (34).

9. The single crystal furnace according to claim 8, characterized in that: The axial direction of the air blowing port (31) intersects with the radial direction of the air blowing ring (34), and the axis of the air blowing port (31) extends in a direction away from the air blowing pipeline (33).

10. The single crystal furnace according to claim 6, characterized in that: The air blowing pipeline (33) comprises a first air blowing sub-pipeline (331) and a second air blowing sub-pipeline (332); the second air blowing sub-pipelines (332) are multiple in number, and the multiple second air blowing sub-pipelines (332) are arranged around the axis of the air blowing ring (34).

Images