Monocrystal original silicon wafer electroluminescence defect detection device
By designing the convenient structure and auxiliary structure of the electroluminescent defect detection device of the single crystal proto-silicon wafer, the problem of inaccurate placement of the single crystal proto-silicon wafer is solved, and automated positioning and high-precision detection are realized, which is suitable for single wafer silicon wafers of different thicknesses.
Patent Information
- Application Number
- CN202421830111.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-31
- Publication Date
- 2025-08-05
- Estimated Expiration
- 2034-07-31
AI Technical Summary
During the electroluminescent defect detection process of single crystal silicon wafers, the placement position is inaccurate due to operational errors, which affects the detection accuracy.
A single crystal pro-silicon wafer electroluminescent defect detection device is designed, which includes a convenient structure and an auxiliary structure. Through the cooperation of the circular plate and the limiting cylinder, the automatic positioning and detection of the single wafer wafer is realized to avoid position deviation.
It improves the detection accuracy and reduces the working strength of staff, and is suitable for single wafer silicon wafer inspection of different thicknesses.
Smart Images

Figure CN223193757U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal silicon wafers, in particular to a single crystal silicon wafer electroluminescent defect detection device. Background Art
[0002] Single crystal raw silicon wafers are high-purity, complete lattice, and flat surface silicon wafers. They are made from single crystal silicon rods through cutting and polishing. They are usually used to manufacture integrated circuits, photovoltaic cells, and other semiconductor devices. Due to their excellent physical properties and stable electrical properties, single crystal raw silicon wafers are widely used in electronics, optoelectronics, and photovoltaic fields.
[0003] Existing related technologies often have the following defects: when producing single-crystal raw silicon wafers, the produced single-crystal raw silicon wafers need to be placed on the inspection table of an electron microscope for electroluminescent defect detection. Since a large number of single-crystal raw silicon wafers need to be inspected, in the process of manually placing the single-crystal raw silicon wafers, operational errors may lead to inaccurate placement positions, affecting the detection accuracy of the electron microscope.
[0004] Therefore, the utility model provides a single crystal silicon wafer electroluminescent defect detection device. Utility Model Content
[0005] The purpose of the utility model is to solve the shortcomings of the prior art that a large number of single crystal raw silicon wafers need to be detected and the placement may be inaccurate due to operational errors, and to propose an electroluminescent defect detection device for single crystal raw silicon wafers.
[0006] In order to achieve the above-mentioned object, the present invention adopts the following technical solution: A single crystal silicon wafer electroluminescent defect detection device includes a base, a support rod is fixedly connected to the surface of the base, a scanning probe is installed on the surface of the support rod, a display screen is fixedly connected to the surface of the support rod, and the display screen is electrically connected to the scanning probe. A convenient structure is provided on the surface of the base, and the convenient structure includes a cylinder, which is fixedly connected to the surface of the base, and a circular plate is rotatably connected to the end of the cylinder away from the base. A support arm is fixedly connected to the surface of the cylinder, and a limiting cylinder is fixedly connected to the end of the support arm away from the cylinder. One end of the limiting cylinder is slidably connected to the surface of the circular plate, and a first circular groove and a second circular groove are provided on the surface of the circular plate. The size of the limiting cylinder is adapted to the size of the first circular groove and the second circular groove. A bracket is fixedly connected to the surface of the base, and a latch is slidably penetrated through the surface of the bracket. The arc surface of the latch is covered with a spring, and the two ends of the spring are respectively fixedly connected to the latch and the bracket. Two limiting grooves are provided on the side of the circular plate close to the latch.
[0007] The effect achieved by the above components is: by setting up a convenient structure, it is convenient to detect single-wafer silicon wafers of the same batch, avoiding the problem of inaccurate luminous defect detection caused by the offset of the placement position when the single-wafer silicon wafers are placed on the surface of the base for luminous defect detection in turn, thereby reducing the workload of the staff.
[0008] Preferably, two threaded rods are passed through the surface thread of the circular plate, and the ends of the two threaded rods away from the base are rotatably connected to adjustment plates, and the two adjustment plates are slidingly connected to the inner walls of the first circular groove and the second circular groove respectively.
[0009] The effect achieved by the above components is: the rotation of the threaded rod will move in the base plate with the help of the thread, and the movement of the threaded rod will drive the adjustment plate to move. When the adjustment plate moves to the appropriate position, when a single single-wafer silicon wafer is placed in the first circular groove or the second circular groove, the single-wafer silicon wafer will be flush with the surface of the circular plate, thereby facilitating the adjustment of the depth of the first circular groove and the second circular groove, and thus being suitable for detecting single-wafer silicon wafers of different thicknesses.
[0010] Preferably, a guide groove is provided on one side of the circular plate close to the base, and the guide groove is connected to the two limiting grooves.
[0011] The effect achieved by the above components is that the guide groove facilitates the sliding of the ball on the surface of the circular plate, thereby facilitating the pin to slide into the limiting groove after the circular plate is rotated to a suitable angle.
[0012] Preferably, a groove is formed at one end of the latch close to the circular plate, and a ball is rotatably connected to the inner wall of the groove.
[0013] The effect achieved by the above components is that the sphere reduces the friction between the latch and the circular plate, thereby avoiding the need to pull the latch all the time when rotating the circular plate.
[0014] Preferably, one end of the latch away from the circular plate is fixedly connected to a rope, and one end of the rope away from the latch is fixedly connected to a pull ring.
[0015] The effects achieved by the above components are: the movement of the pull ring drives the rope to move, the movement of the rope drives the bolt to move, and the pull ring facilitates pulling the bolt.
[0016] Preferably, an auxiliary structure is provided on the surface of the circular plate, and the auxiliary structure includes two rectangular grooves, which are respectively connected to the first circular groove and the second circular groove. The inner wall of the rectangular groove is slidably connected to a frame, and the frame is fixedly connected to the surface of the adjustment plate. A round rod is slidably passed through one side of the frame, and the end of the round rod close to the adjustment plate is fixedly connected to a triangular block, and the end of the round rod away from the triangular block is fixedly connected to the driving plate.
[0017] The effect achieved by the above components is: by setting up the auxiliary structure, it is convenient to lift one side of the single-wafer silicon wafer on the surface of the adjustment plate, thereby facilitating the removal of the single-wafer silicon wafer from the first circular groove or the second circular groove.
[0018] Preferably, guide grooves are provided on both sides of the inner wall of the frame, and rectangular plates are slidably connected to the inner walls of the guide grooves, and the rectangular plates are fixedly connected to the surfaces of the triangular blocks.
[0019] The effect achieved by the above components is that the movement of the triangular block drives the rectangular plate to slide along the inner wall of the guide groove, and the guide groove limits the moving distance of the triangular block, thereby preventing the triangular block from escaping from the frame and being inconvenient to reset.
[0020] Preferably, a protective pad is fixedly connected to the surface of the triangular block, and the protective pad is made of rubber.
[0021] The effect achieved by the above components is that the triangular block drives the protective pad to squeeze the single-wafer silicon wafer, and the protective pad prevents the triangular block from causing wear of the single-wafer silicon wafer when squeezing the single-wafer silicon wafer.
[0022] In summary:
[0023] 1. In the utility model, a convenient structure is provided to place single-wafer silicon wafers of the same batch into the limiting cylinder, and the single-wafer silicon wafers are sequentially dropped into the first circular groove and the second circular groove by rotating the circular plate. The first circular groove and the second circular groove are cyclically rotated to move the single-wafer silicon wafers to the bottom of the scanning probe for detection, thereby facilitating the detection of single-wafer silicon wafers of the same batch and avoiding the need to sequentially place the single-wafer silicon wafers on the surface of the base for luminous defect detection.
[0024] 2. In the utility model, an auxiliary structure is provided to push the driving plate. The movement of the driving plate will drive the round rod to slide in the frame. The movement of the round rod will drive the triangular block to slide in the frame. The triangular block will move in the direction close to the single-wafer silicon wafer. When the triangular block moves to a suitable position, the triangular block will squeeze the single-wafer silicon wafer, thereby lifting one side of the single-wafer silicon wafer on the surface of the adjustment plate, thereby facilitating the removal of the single-wafer silicon wafer from the first circular groove or the second circular groove. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 It is a schematic diagram of the three-dimensional structure of the utility model;
[0026] Figure 2 This is a schematic structural diagram of the utility model from another angle;
[0027] Figure 3 It is a structural diagram of the cylindrical part of the utility model;
[0028] Figure 4This is a schematic diagram of the structure of the latch of the utility model;
[0029] Figure 5 This is a structural diagram of the circular plate of the utility model;
[0030] Figure 6 It is a structural diagram of the auxiliary structure of the utility model.
[0031] Legend: 1. Base; 2. Support rod; 3. Scanning probe; 4. Display screen; 5. Convenient structure; 501. Cylinder; 502. Round plate; 503. Support arm; 504. Limiting cylinder; 505. First round groove; 506. Second round groove; 507. Bracket; 508. Latch; 509. Spring; 510. Limiting groove; 511. Threaded rod; 512. Adjusting plate; 513. Guide groove; 514. Groove; 515. Sphere; 516. Rope; 517. Pull ring; 6. Auxiliary structure; 61. Rectangular groove; 62. Frame; 63. Round rod; 64. Triangular block; 65. Driving plate; 66. Guide groove; 67. Rectangular plate; 68. Protective pad. DETAILED DESCRIPTION
[0032] Reference Figure 1 As shown, the utility model provides a technical solution: a single crystal silicon wafer electroluminescent defect detection device, comprising a base 1, a support rod 2 fixedly connected to the surface of the base 1, a scanning probe 3 installed on the surface of the support rod 2, a display screen 4 fixedly connected to the surface of the support rod 2, the display screen 4 and the scanning probe 3 being electrically connected, a convenient structure 5 is provided on the surface of the base 1, by providing the convenient structure 5, it is convenient to detect the single crystal silicon wafers of the same batch, and avoid the problem of inaccurate luminescent defect detection caused by the displacement of the placement position when the single crystal silicon wafers are placed on the surface of the base 1 for luminescent defect detection, thereby reducing the work intensity of the staff. An auxiliary structure 6 is provided on the surface of the circular plate 502, by providing the auxiliary structure 6, it is convenient to lift one side of the single crystal silicon wafer on the surface of the adjustment plate 512, thereby facilitating the removal of the single crystal silicon wafer from the first circular groove 505 or the second circular groove 506.
[0033] The following specifically describes the specific settings and functions of the convenient structure 5 and the auxiliary structure 6.
[0034] Reference Figure 2 - Figure 5As shown, in this embodiment: the convenient structure 5 includes a cylinder 501, which is fixedly connected to the surface of the base 1, and the end of the cylinder 501 away from the base 1 is rotatably connected to the circular plate 502, and the surface of the cylinder 501 is fixedly connected to a support arm 503, and the end of the support arm 503 away from the cylinder 501 is fixedly connected to a limiting cylinder 504, and one end of the limiting cylinder 504 is slidably connected to the surface of the circular plate 502. The surface of the circular plate 502 is provided with a first circular groove 505 and a second circular groove 506, and the size of the limiting cylinder 504 is adapted to the size of the first circular groove 505 and the second circular groove 506. A bracket 507 is fixedly connected to the surface of the base 1, and a latch 508 is slidably penetrated on the surface of the bracket 507. The arc surface of the latch 508 is covered with a spring 509, and the two ends of the spring 509 are respectively fixedly connected to the latch 508 and the bracket 507, and two limiting grooves 510 are provided on the side of the circular plate 502 close to the latch 508. Two threaded rods 511 are threaded through the surface of the circular plate 502. The ends of the two threaded rods 511 away from the base 1 are rotatably connected to adjustment plates 512. The two adjustment plates 512 are respectively slidably connected to the inner walls of the first circular groove 505 and the second circular groove 506. The rotation of the threaded rod 511 will move in the base plate with the help of the thread, and the movement of the threaded rod 511 will drive the adjustment plate 512 to move. When the adjustment plate 512 moves to a suitable position, when a single single-wafer silicon wafer is placed in the first circular groove 505 or the second circular groove 506, the single-wafer silicon wafer will be flush with the surface of the circular plate 502, thereby facilitating the adjustment of the depth of the first circular groove 505 and the second circular groove 506, and thus being suitable for detecting single-wafer silicon wafers of different thicknesses. A guide groove 513 is defined on one side of the circular plate 502 near the base 1. The guide groove 513 communicates with the two limiting grooves 510. The guide groove 513 facilitates the sliding of the ball 515 on the surface of the circular plate 502, thereby facilitating the sliding of the latch 508 into the limiting grooves 510 after the circular plate 502 is rotated to a suitable angle. A groove 514 is defined on one end of the latch 508 near the circular plate 502. A ball 515 is rotatably connected to the inner wall of the groove 514. The ball 515 reduces friction between the latch 508 and the circular plate 502, thereby avoiding the need to constantly pull the latch 508 when rotating the circular plate 502. The end of the latch 508 away from the circular plate 502 is fixedly connected to a rope 516, and the end of the rope 516 away from the latch 508 is fixedly connected to a pull ring 517. The movement of the pull ring 517 will drive the rope 516 to move, and the movement of the rope 516 will drive the latch 508 to move. The pull ring 517 makes it easier to pull the latch 508.
[0035] Reference Figure 5 and Figure 6As shown, specifically, the auxiliary structure 6 includes two rectangular grooves 61, which are respectively connected to the first circular groove 505 and the second circular groove 506. A frame 62 is slidably connected to the inner wall of the rectangular groove 61, and the frame 62 is fixedly connected to the surface of the adjustment plate 512. A round rod 63 is slidably passed through one side of the frame 62. The end of the round rod 63 close to the adjustment plate 512 is fixedly connected to the triangular block 64, and the end of the round rod 63 away from the triangular block 64 is fixedly connected to the driving plate 65. Guide grooves 66 are formed on both sides of the inner wall of the frame 62. The inner wall of the guide groove 66 is slidably connected to a rectangular plate 67. The rectangular plate 67 is fixedly connected to the surface of the triangular block 64. The movement of the triangular block 64 drives the rectangular plate 67 to slide along the inner wall of the guide groove 66. The guide groove 66 serves to limit the movement distance of the triangular block 64, thereby preventing the triangular block 64 from falling out of the frame 62 and being inconvenient to reset. A protective pad 68 is fixedly connected to the surface of the triangular block 64. The protective pad 68 is made of rubber. The triangular block 64 will drive the protective pad 68 to squeeze the single-wafer silicon wafer. The protective pad 68 can prevent the triangular block 64 from causing wear to the single-wafer silicon wafer when squeezing the single-wafer silicon wafer.
[0036] Working principle: when it is necessary to inspect single-wafer silicon wafers, first put the single-wafer silicon wafers of the same batch into the limiting cylinder 504, then rotate the threaded rod 511, the threaded rod 511 will move in the bottom plate with the help of the thread, and the movement of the threaded rod 511 will drive the adjustment plate 512 to move. When the adjustment plate 512 moves to a suitable position, put a single single-wafer silicon wafer into the first circular groove 505 or the second circular groove 506, the single-wafer silicon wafer will be flush with the surface of the circular plate 502, so that it is easy to adjust the depth of the first circular groove 505 and the second circular groove 506, and then it is suitable for inspecting single-wafer silicon wafers of different thicknesses. Then pull the pull ring 517, the movement of the pull ring 517 will drive the rope 516 to move, and the movement of the rope 516 will drive the pin 508 to the bracket 5 07 and gradually disengage from the limiting groove 510. When the latch 508 disengages from the limiting groove 510, the circular plate 502 is rotated. When the limiting groove 510 moves away from the top of the latch 508, the pull ring 517 is released, and the latch 508 moves toward the circular plate 502 with the help of the contraction force of the spring 509. When the latch 508 moves to a suitable position, it drives the ball 515 to fit the inner wall of the guide groove 513, and then the circular plate 502 is continued to be rotated. The rotation of the circular plate 502 causes the ball 515 to slide along the inner wall of the guide groove 513. The ball 515 reduces the friction between the latch 508 and the circular plate 502, thereby avoiding the need to pull the latch 508 all the time when rotating the circular plate 502, thereby facilitating the rotation of the circular plate 502. The guide groove 513 is used to facilitate the sliding of the ball 515 on the surface of the circular plate 502, so that the pin 508 can slide into the limiting groove 510 after the circular plate 502 is rotated to an appropriate angle. When the circular plate 502 is rotated to an appropriate angle, the first circular groove 505 will be connected to the limiting cylinder 504. At this time, the single-wafer silicon wafer in the limiting cylinder 504 will fall into the first circular groove 505, and then the circular plate 502 will continue to be rotated. The rotation of the circular plate 502 will drive the single-wafer silicon wafer in the first circular groove 505 to rotate to a position close to the bottom of the scanning probe 3. When the single-wafer silicon wafer in the first circular groove 505 moves to the bottom of the scanning probe 3, the pin 508 will be inserted into the limiting groove 510 with the help of the contraction force of the spring 509, thereby adjusting the position of the circular plate 502. The first circular groove 505 is limited, thereby limiting the position of the first circular groove 505, thereby facilitating the detection of the single-wafer silicon wafer in the first circular groove 505. When the detection of the single-wafer silicon wafer in the first circular groove 505 is completed, the pin 508 is pulled out of the limiting groove 510, and then the circular plate 502 is continued to be rotated, the first circular groove 505 is moved away from under the scanning probe 3, and the second circular groove 506 is rotated to under the limiting cylinder 504, so that the single-wafer silicon wafer falls into the second circular groove 506. Then the circular plate 502 is continued to be rotated, and when the second circular groove 506 moves to under the scanning probe 3, the first circular groove 505 is moved to a relative position, so that the single-wafer silicon wafer in the first circular groove 505 can be taken out while the single-wafer silicon wafer in the second circular groove 506 is being detected.The circular plate 502 is rotated cyclically, so that the single silicon wafers of the same batch can be inspected easily, avoiding the need to place the single silicon wafers on the surface of the base 1 for inspection one by one.
[0037] When it is necessary to take the single-wafer silicon wafer out of the first circular groove 505 or the second circular groove 506, first push the driving plate 65. The movement of the driving plate 65 will drive the round rod 63 to slide in the frame 62. The movement of the round rod 63 will drive the triangular block 64 to slide in the frame 62. The movement of the triangular block 64 will move toward the direction close to the single-wafer silicon wafer. The movement of the triangular block 64 will drive the rectangular plate 67 to slide along the inner wall of the guide groove 66. The guide groove 66 limits the moving distance of the triangular block 64, thereby preventing the triangular block 64 from falling out of the frame 62 and being inconvenient to reset. When the triangular block 64 moves to a suitable position, the triangular block 64 will drive the protective pad 68 to squeeze the single-wafer silicon wafer, thereby lifting one side of the single-wafer silicon wafer on the surface of the adjustment plate 512, thereby facilitating the removal of the single-wafer silicon wafer from the first circular groove 505 or the second circular groove 506.
[0038] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.
Claims
1. A single crystal silicon wafer electroluminescent defect detection device, comprising a base (1), a support rod (2) fixedly connected to the surface of the base (1), a scanning probe (3) mounted on the surface of the support rod (2), a display screen (4) fixedly connected to the surface of the support rod (2), the display screen (4) being electrically connected to the scanning probe (3), a convenient structure (5) being provided on the surface of the base (1), and characterized in that: The convenient structure (5) comprises a cylinder (501), wherein the cylinder (501) is fixedly connected to the surface of the base (1), and one end of the cylinder (501) away from the base (1) is rotatably connected to a circular plate (502), and the surface of the cylinder (501) is fixedly connected to a support arm (503), and one end of the support arm (503) away from the cylinder (501) is fixedly connected to a limiting cylinder (504), and one end of the limiting cylinder (504) is slidably connected to the surface of the circular plate (502), and the surface of the circular plate (502) is provided with a first circular groove (505) and The second circular groove (506), the size of the limiting cylinder (504) is adapted to the size of the first circular groove (505) and the second circular groove (506), the surface of the base (1) is fixedly connected to a bracket (507), the surface of the bracket (507) is slidably penetrated by a latch (508), the arc surface of the latch (508) is sleeved with a spring (509), the two ends of the spring (509) are respectively fixedly connected to the latch (508) and the bracket (507), and two limiting grooves (510) are provided on one side of the circular plate (502) close to the latch (508).
2. The electroluminescent defect detection device for single crystal silicon wafers according to claim 1, characterized in that: The surface thread of the circular plate (502) is penetrated by two threaded rods (511), and the ends of the two threaded rods (511) away from the base (1) are rotatably connected to the adjustment plates (512), and the two adjustment plates (512) are respectively slidably connected to the inner walls of the first circular groove (505) and the second circular groove (506).
3. The electroluminescent defect detection device for single crystal silicon wafers according to claim 1, characterized in that: A guide groove (513) is provided on one side of the circular plate (502) close to the base (1), and the guide groove (513) is connected to the two limiting grooves (510).
4. The electroluminescent defect detection device for single crystal silicon wafers according to claim 1, characterized in that: A groove (514) is formed at one end of the latch (508) close to the circular plate (502), and a ball (515) is rotatably connected to the inner wall of the groove (514).
5. The electroluminescent defect detection device for single crystal silicon wafers according to claim 1, characterized in that: One end of the latch (508) away from the circular plate (502) is fixedly connected to a rope (516), and one end of the rope (516) away from the latch (508) is fixedly connected to a pull ring (517).
6. The electroluminescent defect detection device for single crystal silicon wafers according to claim 1, characterized in that: An auxiliary structure (6) is provided on the surface of the circular plate (502), and the auxiliary structure (6) includes two rectangular grooves (61). The two rectangular grooves (61) are respectively connected to the first circular groove (505) and the second circular groove (506). The inner wall of the rectangular groove (61) is slidably connected to a frame (62), and the frame (62) is fixedly connected to the surface of the adjustment plate (512). A round rod (63) is slidably passed through one side of the frame (62), and the end of the round rod (63) close to the adjustment plate (512) is fixedly connected to a triangular block (64), and the end of the round rod (63) away from the triangular block (64) is fixedly connected to a driving plate (65).
7. The electroluminescent defect detection device for single crystal silicon wafers according to claim 6, characterized in that: Guide grooves (66) are provided on both sides of the inner wall of the frame (62), and a rectangular plate (67) is slidably connected to the inner wall of the guide groove (66), and the rectangular plate (67) is fixedly connected to the surface of the triangular block (64).
8. The electroluminescent defect detection device for single crystal silicon wafers according to claim 6, characterized in that: A protective pad (68) is fixedly connected to the surface of the triangular block (64), and the protective pad (68) is made of rubber.