Semiconductor etching equipment

Abstract

The utility model relates to semiconductor etching equipment. The semiconductor etching equipment comprises a first cavity, a second cavity, a dielectric window, a first exhaust system, a baffle plate and a gas pressure feedback regulator, the dielectric window is located between the first cavity and the second cavity, and the first exhaust system is communicated with the first cavity; a first opening is formed in the first exhaust system, one end of the baffle can penetrate through the first opening to extend into the first exhaust system, the depths of the baffle entering the first exhaust system are different, and gas pressures in the first exhaust system are different; and the gas pressure feedback regulator is used for detecting the current gas pressure in the first exhaust system, comparing the current gas pressure with the specified gas pressure, and regulating the depth of the baffle entering the first exhaust system based on the comparison result, so that the gas pressure in the first exhaust system is the specified gas pressure. According to the technical scheme, the gas pressure in the exhaust system can be detected and adjusted in time, and then the temperature of the dielectric window can be kept constant.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor etching device. Background Art

[0002] In related technologies, such as Figure 1 As shown, the semiconductor etching equipment includes an upper chamber 11, a lower chamber 12, a voltage-coupled plasma window (TCP window) 13, a heating fan 14, an aluminum foil tube 15, a metal connecting pipe 16, and a baffle 17. The lower chamber 12 contains a process chamber. The TCP window 13 is provided with a first air inlet 131. The aluminum foil tube 15 and the metal connecting pipe 16 form a second exhaust system, which is connected to the upper chamber 11. In addition to preventing the leakage of toxic gases, the second exhaust system can also promptly exhaust the hot air generated by the heating fan 14 when heating the TCP window 13, preventing the TCP window 13 from overheating. At the same time, the heating of the lower chamber 12 by the TCP window 13 ensures temperature consistency throughout the lower chamber 12.

[0003] In the second exhaust system above the upper chamber 11 of the etching apparatus, a metal connecting pipe 16 connects to the exhaust treatment equipment 19, facilitating the direct delivery and treatment of toxic gases. The gas pressure within the second exhaust system can be regulated by manually adjusting the depth of the baffle 17 within the second exhaust system, thereby maintaining a constant temperature of the voltage-coupled plasma window 13.

[0004] However, before each PM (maintenance and repair) operation of the existing etching equipment, the shutter 17 must be closed, the aluminum foil tube 15 of the second exhaust system must be removed, and the upper chamber 11 must be raised to open the chamber so that the etching equipment can be PM-ed. After the PM is completed, the upper chamber 11 is closed and the aluminum foil tube 15 is installed. The equipment engineer must open the shutter 17 to a certain size based on experience. This empirical operation has certain drawbacks: when the heating fan 14 heats the transformer-coupled plasma window 13, if the shutter 17 of the second exhaust system is opened too wide, the hot air will be drawn away before it can heat the transformer-coupled plasma window 13, resulting in insufficient heating of the transformer-coupled plasma window 13; if the shutter 17 of the second exhaust system is opened too narrowly, the generated hot air cannot be discharged in a timely manner. At the same time, relying solely on the heating fan 14 to reduce the heating power cannot completely solve the problem of overheating of the transformer-coupled plasma window 13. If the heating temperature of the voltage-coupled plasma window 13 of the etching equipment is too high or insufficient, timely feedback and adjustment cannot be made, which affects the production quality of the wafer. Utility Model Content

[0005] The purpose of this application is to provide a semiconductor etching device that can detect the gas pressure in the exhaust system and adjust the gas pressure in the exhaust system in a timely manner, thereby keeping the temperature of the dielectric window constant to avoid affecting the production quality of the wafer.

[0006] According to a first aspect of an embodiment of the present application, there is provided a semiconductor etching device, comprising: a first chamber, a second chamber, a dielectric window, a first exhaust system, a baffle, and a gas pressure feedback controller;

[0007] The medium window is located between the first cavity and the second cavity, and the first exhaust system is in communication with the first cavity;

[0008] The first exhaust system is provided with a first opening, one end of the baffle can extend into the first exhaust system through the first opening, and the other end of the baffle is located outside the first exhaust system. The depth to which the baffle enters the first exhaust system varies, and the gas pressure in the first exhaust system varies.

[0009] A portion of the gas pressure feedback regulator is located in the first exhaust system, and the other portion is located outside the first exhaust system. The gas pressure feedback regulator is used to detect the current gas pressure in the first exhaust system, compare the current gas pressure with the specified gas pressure, and adjust the depth of the baffle entering the first exhaust system based on the comparison result so that the gas pressure in the first exhaust system is the specified gas pressure.

[0010] In one embodiment, the gas pressure feedback controller includes a pressure sensor, an amplification control circuit and an electric actuator;

[0011] The pressure sensor, the amplification control circuit and the electric actuator are sequentially connected in series; the pressure sensor and the amplification control circuit are located in the first exhaust system, and the electric actuator is located outside the first exhaust system;

[0012] The pressure sensor is used to detect the current gas pressure in the first exhaust system to obtain a first electrical signal, and the first electrical signal is used to indicate the current gas pressure;

[0013] The amplification control circuit is configured to amplify the first electrical signal to obtain a second electrical signal, perform analog-to-digital conversion on the second electrical signal to obtain a first digital signal, and compare the first digital signal with the second digital signal to obtain the comparison result, wherein the second digital signal is used to indicate the specified gas pressure; the comparison result is a difference signal between the second digital signal and the first digital signal;

[0014] The electric actuator is configured to adjust a depth of the baffle into the first exhaust system based on the comparison result.

[0015] In one embodiment, the pressure sensor includes a power supply, a piezoresistor, an ammeter, and a first processor;

[0016] The power supply, the varistor, and the ammeter are connected in series to form a circuit loop; wherein the resistance value of the varistor varies with the gas pressure in the first exhaust system, and the ammeter is used to detect the current value in the circuit loop;

[0017] The first processor is connected to the ammeter, and is configured to calculate the current gas pressure based on the current value and a corresponding relationship between the current and the gas pressure.

[0018] In one embodiment, the pressure sensor further includes a high temperature and corrosion resistant housing and a first connecting line;

[0019] The power supply, varistor, ammeter and first processor are located in the high-temperature and corrosion-resistant housing. The high-temperature and corrosion-resistant housing is provided with a first through hole. The output end of the first processor is connected to the first end of the first connecting line. The second end of the first connecting line passes through the first through hole and is connected to the amplification control circuit.

[0020] The first connecting line includes a core layer and a high-temperature and corrosion-resistant cladding, the high-temperature and corrosion-resistant cladding wraps the core layer, and the core layer is used to transmit the first electrical signal.

[0021] In one embodiment, the amplification control circuit includes an amplifier, an analog-to-digital converter, and a second processor;

[0022] The amplifier, the analog-to-digital converter and the second processor are connected in series in sequence;

[0023] The amplifier is used to amplify the first electrical signal to obtain a second electrical signal;

[0024] The analog-to-digital converter is used to perform analog-to-digital conversion on the second electrical signal to obtain a first digital signal;

[0025] The second processor is used to compare the first digital signal with a second digital signal to obtain the comparison result, and the second digital signal is used to indicate the specified gas pressure.

[0026] In one embodiment, the electric actuator includes a PID controller, a motor driver, and a motor;

[0027] The PID controller is electrically connected to the motor driver, and the motor driver is electrically connected to the motor; the rotating shaft of the motor is fixedly connected to the baffle;

[0028] The PID controller is used to generate a control signal after calculating the difference signal using a PID algorithm;

[0029] The motor driver is configured to control the motor based on the control signal to drive the baffle to move closer to or farther from the first exhaust system, so as to control a depth of the baffle entering the first exhaust system.

[0030] In one embodiment, the electric actuator further includes a buffer assembly;

[0031] The first end of the buffer assembly rests against the outer wall of the first exhaust system, and the second end is fixedly connected to the rotating shaft of the motor. The second end of the buffer assembly is also fixedly connected to the baffle, and the buffer assembly is used to buffer the force exerted by the motor on the baffle.

[0032] In one embodiment, the buffer assembly includes a first drive plate and a first spring;

[0033] The first side surface of the first driving plate is fixedly connected to the rotating shaft of the motor, the second side surface is fixedly connected to the first end of the first spring, the second end of the first spring is against the outer wall of the first exhaust system, and the baffle is fixedly connected to the first driving plate.

[0034] In one embodiment, the buffer assembly includes a first drive plate, a first spring, a second drive plate, a second spring, a third drive plate and a third spring;

[0035] The first side surface of the first driving plate is fixedly connected to the rotating shaft of the motor, the second side surface is fixedly connected to the first end of the first spring, the second end of the first spring abuts the first side surface of the second driving plate, the second side surface of the second driving plate is fixedly connected to the first end of the second spring, the second end of the second spring abuts the first side surface of the third driving plate, the second side surface of the third driving plate is fixedly connected to the first end of the third spring, the second end of the third spring abuts the outer wall of the first exhaust system, and the baffle is fixedly connected to the first driving plate.

[0036] In one embodiment, the semiconductor etching equipment further includes a pressure gauge, the pressure gauge being connected to the pressure sensor, and the pressure gauge being configured to analyze the first electrical signal to obtain the current gas pressure and display the current gas pressure;

[0037] The pressure gauge is located outside the first exhaust system, on an outer wall of the first exhaust system, or on an outer wall of the first cavity.

[0038] Compared to existing technologies, the present invention has the following advantages: by providing a gas pressure feedback controller, the current gas pressure in the first exhaust system is detected, compared with a specified gas pressure, and based on the comparison result, the depth at which the baffle enters the first exhaust system is adjusted to maintain the specified gas pressure in the first exhaust system. This makes it possible to detect and adjust the gas pressure in the exhaust system in a timely manner, thereby maintaining a constant temperature of the dielectric window and preventing any impact on wafer production quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a structural schematic diagram of a semiconductor etching device according to related technology.

[0040] Figure 2 The figure is a schematic structural diagram of a semiconductor etching device according to an exemplary embodiment.

[0041] Figure 3 is a schematic structural diagram of a semiconductor etching device according to another exemplary embodiment.

[0042] Figure 4 is a schematic structural diagram of a semiconductor etching device according to another exemplary embodiment.

[0043] Figures 5 to 7 Schematic diagram of the process of adjusting the depth of the baffle into the first exhaust system. DETAILED DESCRIPTION

[0044] Unless otherwise defined, the technical terms or scientific terms used in this specification and claims shall have the ordinary meaning understood by persons having ordinary skills in the technical field to which this application belongs. The specific embodiments of the present application will be described below in conjunction with the accompanying drawings. It should be pointed out that in the specific description of these embodiments, in order to provide a concise description, this specification cannot provide a detailed description of all the features of the actual embodiments. Without departing from the spirit and scope of this application, those skilled in the art may modify and replace the embodiments of the present application, and the resulting embodiments are also within the scope of protection of this application.

[0045] One embodiment of the present application provides a semiconductor etching device. The semiconductor etching device can be used to etch a wafer. For example, the semiconductor etching device can be a dry etching device. For another example, the semiconductor etching device can be a voltage-coupled plasma etching device. Figure 2The semiconductor etching equipment may include: a first chamber 21, a second chamber 22, a dielectric window 23, a first exhaust system 24, a baffle 25, a gas pressure feedback controller 26 and a fan 27.

[0046] like Figure 2 As shown, the first cavity 21 covers the second cavity 22, and the second cavity 22 contains a chamber for performing the etching process. The dielectric window 23 is located between the first cavity 21 and the second cavity 22. The dielectric window 23 can be a cover plate made of quartz or ceramic. For example, when the semiconductor etching equipment is a voltage-coupled plasma etching equipment, the dielectric window 23 can be a voltage-coupled plasma window. A second air inlet 231 is provided on the dielectric window 23. A fan 27 is provided on the first cavity 21, and the fan 27 can be a heating fan for heating the dielectric window 23. When the semiconductor etching equipment is etching the wafer, the temperature of the dielectric window 23 needs to be kept constant to avoid affecting the quality of the wafer.

[0047] like Figure 2 As shown, one end of the first exhaust system 24 is connected to the first cavity 21 , and the other end is connected to the exhaust gas treatment device 19 .

[0048] In one embodiment, Figure 2 As shown, the first exhaust system 24 may include an exhaust pipe 241 and a metal connecting pipe 242. The exhaust pipe 241 is connected to the metal connecting pipe 242. The exhaust pipe 241 may be made of aluminum foil. The exhaust pipe 241 may wrap the metal connecting pipe 242 at the connection with the metal connecting pipe 242, but is not limited thereto.

[0049] In one embodiment, Figure 2 As shown, a first opening (not shown) is provided on the first exhaust system 24, and the first opening can be provided on the metal connecting pipe 242. One end of the baffle 25 can extend into the first exhaust system 24 through the first opening, and the other end of the baffle 25 is located outside the first exhaust system 24. The depth to which the baffle 25 enters the first exhaust system 25 is different, and the gas pressure in the first exhaust system 24 is different.

[0050] In one embodiment, Figure 2 As shown, a portion of the gas pressure feedback regulator 26 is located in the first exhaust system 24, and the other portion is located outside the first exhaust system 24. The gas pressure feedback regulator 26 is used to detect the current gas pressure in the first exhaust system 24, compare the current gas pressure with the specified gas pressure, and adjust the depth of the baffle 25 entering the first exhaust system 24 based on the comparison result so that the gas pressure in the first exhaust system 24 is the specified gas pressure.

[0051] In the embodiment of the present application, a gas pressure feedback controller is provided to detect the current gas pressure in the first exhaust system, compare the current gas pressure with a specified gas pressure, and adjust the depth of the baffle into the first exhaust system based on the comparison result to maintain the gas pressure in the first exhaust system at the specified gas pressure. This allows the gas pressure in the exhaust system to be detected and adjusted in a timely manner. Furthermore, the temperature of the dielectric window can be adjusted in a timely manner to maintain a constant temperature, thereby avoiding any impact on wafer production quality.

[0052] The technical solution provided in the embodiment of the present application can better control the temperature of the dielectric window 23 during the etching process, which is beneficial to ensuring the stability of the process production and improving product quality.

[0053] In one embodiment, Figure 2 As shown, the gas pressure feedback controller includes a pressure sensor 261 , an amplification control circuit 262 and an electric actuator 263 .

[0054] The pressure sensor 261 , the amplifying control circuit 262 and the electric actuator 263 are connected in series in sequence; the pressure sensor 261 and the amplifying control circuit 262 are located in the first exhaust system, and the electric actuator 263 is located outside the first exhaust system.

[0055] The pressure sensor 261 is used to detect the current gas pressure in the first exhaust system 24 and generate a first electrical signal, which is used to indicate the current gas pressure in the first exhaust system 24. The amplification control circuit 262 is used to amplify the first electrical signal to generate a second electrical signal, perform analog-to-digital conversion on the second electrical signal to generate a first digital signal, and compare the first digital signal with the second digital signal to obtain a comparison result, where the second digital signal indicates a specified gas pressure, and the comparison result is a difference signal between the second digital signal and the first digital signal. The electric actuator 263 is used to adjust the depth of the baffle into the first exhaust system based on the comparison result.

[0056] In one embodiment, Figure 3 As shown, the pressure sensor 261 may include a power supply 2611 , a piezoresistor 2612 , an ammeter 2613 and a first processor 2614 .

[0057] like Figure 3As shown, a power supply 2611, a varistor 2612, and an ammeter 2613 are connected in series to form a circuit loop. The resistance value of the varistor 2612 varies with the gas pressure within the first exhaust system 24. The ammeter 2613 is used to detect the current value in the circuit loop. A first processor 2614 is connected to the ammeter 2613 and is configured to calculate the current gas pressure within the first exhaust system 24 based on the current value and the corresponding relationship between current and gas pressure. The processor 2614 then generates a first electrical signal based on the current gas pressure within the first exhaust system 24 and outputs the first electrical signal to the amplification control circuit 262.

[0058] In one embodiment, pressure sensor 261 may further include a high-temperature, corrosion-resistant housing and a first connecting wire. Power supply 2611, varistor 2612, ammeter 2613, and first processor 2614 are located within the high-temperature, corrosion-resistant housing. A first through-hole is provided in the high-temperature, corrosion-resistant housing. The output end of first processor 2614 is connected to the first end of the first connecting wire, and the second end of the first connecting wire passes through the first through-hole and connects to amplification control circuit 262. This allows pressure sensor 261 to operate in environments with high temperatures and toxic gas corrosion, extending its service life.

[0059] In one embodiment, the first connecting wire may include a core layer and a high-temperature and corrosion-resistant cladding, wherein the high-temperature and corrosion-resistant cladding surrounds the core layer, and the core layer is used to transmit the first electrical signal. In this way, the first connecting wire can be used in environments with high temperatures and toxic gas corrosion, thereby extending the service life of the first connecting wire.

[0060] In one embodiment, the pressure sensor 261 can detect pressures ranging from a few Torr to several thousand Torr, enabling precise monitoring of a wide range of pressures; its size includes the applicable range of 12-inch wafers, 8-inch wafers, and even 6-inch wafers.

[0061] In one embodiment, Figure 3 As shown, amplification control circuit 262 includes an amplifier 2621, an analog-to-digital converter 2622, and a second processor 2623. Amplifier 2621, analog-to-digital converter 2622, and second processor 2623 are connected in series. Amplifier 2621 is configured to amplify the first electrical signal to obtain a second electrical signal. Analog-to-digital converter 2622 is configured to perform analog-to-digital conversion on the second electrical signal to obtain a first digital signal. Second processor 2623 is configured to compare the first digital signal with the second digital signal to obtain a comparison result. The second digital signal is configured to indicate a specified gas pressure. The second digital signal may be pre-stored in a storage module of second processor 2623 or in a memory connected to second processor 2623.

[0062] In one embodiment, Figure 3As shown, the electric actuator 263 includes a PID (Proportion Integration Differentiation) controller 2631, a motor driver 2632, and a motor 2633. Figure 3 As shown, PID controller 2631 is electrically connected to motor driver 2632, which is in turn electrically connected to motor 2633. A rotating shaft 26331 of motor 2633 is fixedly connected to baffle 25. PID controller 2631 is configured to calculate the difference signal using a PID algorithm and generate a control signal. Motor driver 2632 is configured to control motor 2633 based on the control signal to drive baffle 25 toward or away from first exhaust system 24, thereby controlling the depth to which baffle 25 enters first exhaust system 24 through first opening 2421.

[0063] In one embodiment, Figure 3 As shown, the electric actuator may further include a buffer assembly 2634. A first end of the buffer assembly 2634 abuts against the outer wall of the first exhaust system 24, a second end of the buffer assembly 2634 is fixedly connected to the rotating shaft 26331 of the motor 2633, and a second end of the buffer assembly 2634 is also fixedly connected to the baffle 25. The buffer assembly 2634 is used to buffer the force applied by the motor 2633 to the baffle 25.

[0064] In one embodiment, Figure 3 As shown, the buffer assembly includes a first drive plate P1 and a first spring K1. The first drive plate P1 is a straight plate. A first side surface of the first drive plate P1 is fixedly connected to the rotating shaft 26331 of the motor 2633. A second side surface of the first drive plate P1 is fixedly connected to the first end of the first spring K1. The second end of the first spring K1 abuts against the outer wall of the first exhaust system 24. The baffle 25 is fixedly connected to the second side surface of the first drive plate P1. The placement of the first spring K1 between the first drive plate P1 and the outer wall of the first exhaust system 24 buffers the force applied by the motor 2633 to the baffle 25, ensuring more stable operation of the baffle 25.

[0065] In one embodiment, Figure 3 As shown, the electric actuator may further include a buffer 2635, which is arranged between the rotating shaft 26331 of the motor 2633 and the first drive plate P1, and is used to buffer the force of the rotating shaft 26331 of the motor 2633 on the first drive plate P1, thereby buffering the force of the motor 2633 on the baffle 25, making the baffle 25 run more stably.

[0066] In one embodiment, Figure 3As shown, the semiconductor etching equipment also includes a pressure gauge 28. The pressure gauge 28 is connected to the pressure sensor 261. The pressure gauge 28 is used to analyze the first electrical signal to obtain the current gas pressure in the first exhaust system 24 and display the current gas pressure. The pressure gauge 28 can be located outside the first exhaust system 24, on the outer wall of the first exhaust system 24, or on the outer wall of the first chamber 21. The pressure gauge 28 can more intuitively capture the gas pressure in the first exhaust system 24, facilitate adjustment after each maintenance of the semiconductor etching equipment, monitor whether there are any abnormalities in the dielectric window heating, and ensure the reliability of the gas pressure feedback controller 26.

[0067] In one embodiment, Figure 3 As shown, the pressure gauge 28 can be connected to the output end of the amplifier 2621. The pressure gauge 28 is used to analyze the second electrical signal to obtain the current gas pressure in the first exhaust system 24 and display the current gas pressure in the first exhaust system 24. The electrical signal amplified by the amplifier 2621 is more convenient for the pressure gauge 28 to perform signal processing.

[0068] exist Figure 3 In the embodiment shown, the buffer assembly 2634 includes a drive plate and a spring. In other embodiments, the buffer assembly 2634 may include two drive plates and two springs. The drive plates and the springs are arranged alternately. The motor 2633 pushes the drive plate to compress the springs in turn, which can reduce the bending and shaking problems caused by the deformation of a single spring, making the baffle 25 run more stably.

[0069] In another embodiment, Figure 4 As shown, the buffer assembly includes a first driving plate P1, a first spring K1, a second driving plate P2, a second spring K2, a third driving plate P3 and a third spring K3.

[0070] The first side of the first drive plate P1 is fixedly connected to the rotating shaft 26331 of the motor 2633. The second side of the first drive plate P1 is fixedly connected to the first end of the first spring K1. The second end of the first spring K1 abuts the first side of the second drive plate P2. The second side of the second drive plate P2 is fixedly connected to the first end of the second spring K2. The second end of the second spring K2 abuts the first side of the third drive plate P3. The second side of the third drive plate P3 is fixedly connected to the first end of the third spring K3. The second end of the third spring K3 abuts the outer wall of the first exhaust system 24. The baffle 25 is fixedly connected to the second side of the first drive plate P1. The motor 2633 pushes the first drive plate P1 to sequentially compress the first spring K1, the second spring K2, and the third spring K3. This reduces bending and shaking caused by deformation of a single spring, ensuring more stable operation of the baffle 25.

[0071] In the embodiment of the present application, the motor 2633 has good stability and can smoothly control the movement of the baffle 25 without vibration, which will not affect the normal etching process of the semiconductor etching equipment on the product.

[0072] The following describes the process of adjusting the depth of the baffle 25 entering the first exhaust system 24 by taking the case where the temperature of the dielectric window 23 is too low as an example.

[0073] like Figure 5 As shown, the baffle 25 is located outside the first exhaust system 24 . The air pressure in the first exhaust system 24 is low, the temperature of the dielectric window 23 is too low, and the gas pressure feedback controller 26 starts to drive the baffle 25 into the first exhaust system 24 .

[0074] During the process of the gas pressure feedback regulator 26 driving the baffle 25 to enter the first exhaust system 24, the gas pressure feedback regulator 26 detects the current gas pressure in the first exhaust system 24 in real time, compares the current gas pressure with the specified gas pressure, and adjusts the depth of the baffle 25 entering the first exhaust system 24 based on the comparison result.

[0075] like Figure 6 As shown, when the first spring K1 is compressed and a portion of the baffle 25 enters the first exhaust system 24, the gas pressure feedback regulator 26 determines that the current gas pressure in the first exhaust system 24 has not reached the specified gas pressure and the temperature of the dielectric window 23 is still relatively low, and will continue to drive the baffle 25 to enter the first exhaust system 24.

[0076] like Figure 7 As shown, the first spring K1 and the second spring K2 are compressed, and more of the baffle 25 enters the first exhaust system 24. When the gas pressure feedback controller 26 determines that the current gas pressure in the first exhaust system 24 reaches the specified gas pressure, it stops driving the baffle 25. At this time, the temperature of the dielectric window 23 reaches the set temperature.

[0077] In the first exhaust system 24 , the relationship between gas pressure and temperature is: PV = nRT. If the volume (V) and the amount of substance (n) remain constant, increasing the temperature (T) increases the gas pressure (P). R is the molar gas constant.

[0078] In the embodiment of the present application, a gas pressure feedback controller is provided to detect the current gas pressure in the first exhaust system, compare the current gas pressure with a specified gas pressure, and adjust the depth of the baffle into the first exhaust system based on the comparison result to maintain the gas pressure in the first exhaust system at the specified gas pressure. This allows the gas pressure in the exhaust system to be detected and adjusted in a timely manner. Furthermore, the temperature of the dielectric window can be adjusted in a timely manner to maintain a constant temperature, thereby avoiding any impact on wafer production quality.

[0079] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0080] The above description of the embodiments is intended to facilitate understanding and application of the present application by those skilled in the art. It will be apparent that those skilled in the art can readily make various modifications to these embodiments and apply the general principles described herein to other embodiments without expending any creative effort. Therefore, the present application is not limited to the embodiments described herein, and improvements and modifications made by those skilled in the art based on the disclosure of this application without departing from the scope and spirit of this application are within the scope of this application.

Claims

1. A semiconductor etching device, characterized in that: include: A first cavity, a second cavity, a medium window, a first exhaust system, a baffle, and a gas pressure feedback regulator; The medium window is located between the first cavity and the second cavity, and the first exhaust system is in communication with the first cavity; The first exhaust system is provided with a first opening, one end of the baffle can extend into the first exhaust system through the first opening, and the other end of the baffle is located outside the first exhaust system. The depth to which the baffle enters the first exhaust system varies, and the gas pressure in the first exhaust system varies. A portion of the gas pressure feedback regulator is located in the first exhaust system, and the other portion is located outside the first exhaust system. The gas pressure feedback regulator is used to detect the current gas pressure in the first exhaust system, compare the current gas pressure with the specified gas pressure, and adjust the depth of the baffle entering the first exhaust system based on the comparison result so that the gas pressure in the first exhaust system is the specified gas pressure.

2. The semiconductor etching device according to claim 1, wherein: The gas pressure feedback controller includes a pressure sensor, an amplification control circuit and an electric actuator; The pressure sensor, the amplification control circuit and the electric actuator are sequentially connected in series; the pressure sensor and the amplification control circuit are located in the first exhaust system, and the electric actuator is located outside the first exhaust system; The pressure sensor is used to detect the current gas pressure in the first exhaust system to obtain a first electrical signal, and the first electrical signal is used to indicate the current gas pressure; The amplification control circuit is configured to amplify the first electrical signal to obtain a second electrical signal, perform analog-to-digital conversion on the second electrical signal to obtain a first digital signal, and compare the first digital signal with the second digital signal to obtain the comparison result, wherein the second digital signal is used to indicate the specified gas pressure; the comparison result is a difference signal between the second digital signal and the first digital signal; The electric actuator is configured to adjust a depth of the baffle into the first exhaust system based on the comparison result.

3. The semiconductor etching device according to claim 2, wherein: The pressure sensor includes a power supply, a piezoresistor, an ammeter and a first processor; The power supply, the varistor, and the ammeter are connected in series to form a circuit loop; wherein the resistance value of the varistor varies with the gas pressure in the first exhaust system, and the ammeter is used to detect the current value in the circuit loop; The first processor is connected to the ammeter, and is configured to calculate the current gas pressure based on the current value and a corresponding relationship between the current and the gas pressure.

4. The semiconductor etching equipment according to claim 3, wherein: The pressure sensor further includes a high temperature and corrosion resistant housing and a first connecting line; The power supply, varistor, ammeter and first processor are located in the high-temperature and corrosion-resistant housing. The high-temperature and corrosion-resistant housing is provided with a first through hole. The output end of the first processor is connected to the first end of the first connecting line. The second end of the first connecting line passes through the first through hole and is connected to the amplification control circuit. The first connecting line includes a core layer and a high-temperature and corrosion-resistant cladding, the high-temperature and corrosion-resistant cladding wraps the core layer, and the core layer is used to transmit the first electrical signal.

5. The semiconductor etching equipment according to claim 2, wherein: The amplification control circuit includes an amplifier, an analog-to-digital converter and a second processor; The amplifier, the analog-to-digital converter and the second processor are connected in series in sequence; The amplifier is used to amplify the first electrical signal to obtain a second electrical signal; The analog-to-digital converter is used to perform analog-to-digital conversion on the second electrical signal to obtain a first digital signal; The second processor is used to compare the first digital signal with a second digital signal to obtain the comparison result, and the second digital signal is used to indicate the specified gas pressure.

6. The semiconductor etching equipment according to claim 2, wherein: The electric actuator includes a PID controller, a motor driver and a motor; The PID controller is electrically connected to the motor driver, and the motor driver is electrically connected to the motor; the rotating shaft of the motor is fixedly connected to the baffle; The PID controller is used to generate a control signal after calculating the difference signal using a PID algorithm; The motor driver is configured to control the motor based on the control signal to drive the baffle to move closer to or farther from the first exhaust system, so as to control a depth of the baffle entering the first exhaust system.

7. The semiconductor etching equipment according to claim 6, wherein: The electric actuator further includes a buffer assembly; The first end of the buffer assembly rests against the outer wall of the first exhaust system, and the second end is fixedly connected to the rotating shaft of the motor. The second end of the buffer assembly is also fixedly connected to the baffle, and the buffer assembly is used to buffer the force exerted by the motor on the baffle.

8. The semiconductor etching equipment according to claim 7, wherein: The buffer assembly includes a first driving plate and a first spring; The first side surface of the first driving plate is fixedly connected to the rotating shaft of the motor, the second side surface is fixedly connected to the first end of the first spring, the second end of the first spring is against the outer wall of the first exhaust system, and the baffle is fixedly connected to the first driving plate.

9. The semiconductor etching equipment according to claim 7, wherein: The buffer assembly includes a first driving plate, a first spring, a second driving plate, a second spring, a third driving plate and a third spring; The first side surface of the first driving plate is fixedly connected to the rotating shaft of the motor, the second side surface is fixedly connected to the first end of the first spring, the second end of the first spring abuts the first side surface of the second driving plate, the second side surface of the second driving plate is fixedly connected to the first end of the second spring, the second end of the second spring abuts the first side surface of the third driving plate, the second side surface of the third driving plate is fixedly connected to the first end of the third spring, the second end of the third spring abuts the outer wall of the first exhaust system, and the baffle is fixedly connected to the first driving plate.

10. The semiconductor etching equipment according to claim 2, wherein: Also included is a pressure gauge, the pressure gauge is connected to the pressure sensor, the pressure gauge is used to analyze the first electrical signal to obtain the current gas pressure, and display the current gas pressure; The pressure gauge is located outside the first exhaust system, on an outer wall of the first exhaust system, or on an outer wall of the first cavity.

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