Cryopump and semiconductor device

Abstract

The utility model provides a low-temperature pump and semiconductor equipment. The low-temperature pump comprises a pump body, an isolating valve body and a plurality of groups of low-temperature units arranged in the pump body, the multiple sets of low-temperature units are arranged in the circumferential direction of the inner circumference of the pump body, and the multiple sets of low-temperature units can independently communicate with the processing cavity so as to adsorb gas in the processing cavity; the isolating valve body is arranged at the top of the pump body and can rotate in the circumferential direction of the inner circumference of the pump body so that the corresponding low-temperature unit can be isolated from the manufacturing process cavity, and therefore the low-temperature unit isolated from the manufacturing process cavity can be regenerated. According to the utility model, the self-regeneration of the low-temperature pump in the working process can be realized, the semiconductor equipment (machine table) can be ensured to work continuously, and the production efficiency of the semiconductor equipment (machine table) is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a cryogenic pump and semiconductor equipment. Background Art

[0002] Cryopumps are vacuum pumps that use low-temperature surfaces to condense gas, also known as condensation pumps. They are widely used in the research and production of semiconductors and integrated circuits, as well as molecular beam research, vacuum coating equipment, vacuum surface analysis instruments, ion implanters, and space simulation devices.

[0003] A cryopump contains a cold plate cooled to an extremely low temperature by liquid helium or a refrigerator. The cryopump utilizes the physical adsorption of gases on the cryogenic surface provided by the refrigerator, reducing molecular thermal motion and, therefore, the pressure of gas molecules, ultimately achieving a high vacuum. After a period of operation, the cryogenic surface becomes covered with solid condensed gas, gradually weakening its adsorption capacity until it ceases to function.

[0004] Therefore, when using a cryopump, it must be heated periodically to remove solids condensed on the cold plate. This is called "regeneration." Regeneration typically takes four to six hours, requiring the machine to be down for this period. A typical machine often has three to six cryopumps installed, resulting in significant downtime and waiting times, significantly impacting production efficiency.

[0005] It should be noted that the information disclosed in the background technology section of this utility model is only intended to deepen the understanding of the general background technology of the utility model, and should not be regarded as an admission or in any form of implication that the information constitutes prior art already known to those skilled in the art. Utility Model Content

[0006] The purpose of the present utility model is to provide a cryopump and semiconductor equipment, which can solve the problem that the cryopump needs to be shut down for regeneration after working for a period of time, realize the self-regeneration of the cryopump during operation, ensure that the semiconductor equipment (machine) can operate uninterruptedly, and improve the production efficiency of the semiconductor equipment (machine).

[0007] In order to achieve the above-mentioned purpose, the utility model provides a low-temperature pump, which includes a pump body, an isolation valve body and multiple groups of low-temperature units arranged in the pump body; the multiple groups of low-temperature units are arranged along the inner circumference of the pump body, and the multiple groups of low-temperature units can be independently connected to the process chamber to adsorb the gas in the process chamber; the isolation valve body is arranged at the top of the pump body, and the isolation valve body can rotate along the inner circumference of the pump body to isolate the corresponding low-temperature unit from the process chamber, so that the low-temperature unit isolated from the process chamber can be regenerated.

[0008] Optionally, the cryogenic pump further includes a flange mounted on the top of the pump body, the flange having a through hole for connecting the process chamber and the pump body, and the isolation valve body is located in the through hole.

[0009] Optionally, each group of the low-temperature units includes a radiation hood, a refrigeration head and a regeneration pipe. The radiation hood is arranged around the refrigeration head to form a low-temperature cavity. The regeneration pipe can be connected to the low-temperature cavity to provide heated regeneration gas to the low-temperature cavity.

[0010] Optionally, the radiation shields of the multiple groups of low-temperature units are connected to each other.

[0011] Optionally, the cross-section of the cryogenic chamber enclosed by the radiation shields of each group of cryogenic units and the cross-section of the isolation valve body are both fan-shaped.

[0012] Optionally, the central angles of the low-temperature cavities surrounded by the radiation shields of each group of low-temperature units are equal.

[0013] Optionally, each group of the low-temperature units further includes a plurality of groups of condensation plates installed on the refrigeration head, and the inner surfaces of the condensation plates are provided with an adsorption layer capable of adsorbing gas.

[0014] Optionally, the cryogenic pump further includes a driving member connected to the isolation valve body, wherein the driving member is configured to drive the isolation valve body to rotate circumferentially along the inner periphery of the pump body.

[0015] Optionally, the cryogenic pump further includes a guide plate disposed in the pump body, wherein the guide plate is located above the multiple groups of cryogenic units.

[0016] To achieve the above objectives, the present invention further provides a semiconductor device, comprising a machine having at least one process chamber and at least one cryopump as described above, wherein the cryopump is installed on the machine.

[0017] Compared with the prior art, the cryopump and semiconductor equipment provided by the present invention have the following beneficial effects:

[0018] The low-temperature pump provided by the present invention includes a pump body, an isolation valve body and a plurality of groups of low-temperature units arranged in the pump body; the plurality of groups of low-temperature units are arranged along the inner circumference of the pump body, and the plurality of groups of low-temperature units can be independently connected to the process chamber to adsorb the gas in the process chamber; the isolation valve body is arranged at the top of the pump body, and the isolation valve body can rotate along the inner circumference of the pump body to isolate the corresponding low-temperature unit from the process chamber, so that the low-temperature unit isolated from the process chamber can be regenerated. Therefore, the cryogenic pump provided by the present invention is provided with multiple groups of cryogenic units that can be independently connected to the process chamber in the pump body, so that each group of cryogenic units can independently adsorb the gas in the process chamber, thereby achieving a high vacuum degree in the process chamber; at the same time, by providing an isolation valve body that can rotate along the circumference of the pump body, the cryogenic units located directly below the isolation valve body can be isolated from the process chamber, so that the regeneration of each group of cryogenic units can be completed independently when isolated from the process chamber, thereby not affecting the vacuum degree in the process chamber. In summary, it can be seen that the present invention can solve the problem that the cryogenic pump needs to be shut down for regeneration after working for a period of time, realize the self-regeneration of the cryogenic pump during operation, ensure that the semiconductor equipment (machine) can work uninterruptedly, and greatly improve the production efficiency of the semiconductor equipment (machine).

[0019] Since the semiconductor device provided by the present invention includes the cryopump provided by the present invention, the semiconductor device provided by the present invention has at least all the beneficial effects of the cryopump provided by the present invention. Therefore, for the relevant content about the beneficial effects of the semiconductor device provided by the present invention, reference can be made to the relevant description of the beneficial effects of the cryopump provided by the present invention in the above text, and no further details will be given here. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is the working principle diagram of the cryogenic pump;

[0021] Figure 2 A schematic diagram of the overall structure of a cryogenic pump provided in one embodiment of the present invention;

[0022] Figure 3 A schematic structural diagram of a low-temperature unit provided in one embodiment of the present utility model;

[0023] Figure 4 A schematic diagram of the arrangement of a cryogenic unit in a cryogenic pump provided in one embodiment of the present invention;

[0024] Figure 5 This is a diagram showing the working principle of a cryogenic pump provided in one embodiment of the present invention.

[0025] The description of the accompanying drawings is as follows:

[0026] Pump body - 100;

[0027] Isolation valve body-200;

[0028] Low-temperature unit 300, C0-C7; radiation cover 310; refrigeration head 320; regeneration pipeline 330; low-temperature chamber 340; condensation plate 350; adsorption layer 351; refrigerant pipeline 360; outlet pipeline 370;

[0029] Flange-400;

[0030] Drive element - 500;

[0031] deflector - 600;

[0032] Seals -700. DETAILED DESCRIPTION

[0033] The cryopump and semiconductor device proposed in the present invention are further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are not in exact proportions. They are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read. They are not intended to limit the conditions for the implementation of the present invention. Any structural modifications, changes in proportional relationships, or adjustments in size should still fall within the scope of the technical content disclosed in the present invention as long as they are the same or similar to the effects and purposes that can be achieved by the present invention. The specific design features of the present invention disclosed herein, including, for example, specific dimensions, directions, positions, and shapes, will be determined in part by the specific application and use environment. Also, in the embodiments described below, sometimes the same reference numerals are used in common between different drawings to represent the same parts or parts having the same functions, and their repeated descriptions are omitted. In this specification, similar reference numerals and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings. In addition, if the method described herein includes a series of steps, the order of these steps presented herein is not necessarily the only order in which these steps can be performed, and some of the steps described may be omitted and / or some other steps not described herein may be added to the method.

[0034] It should be noted that, in this document, relational terms such as first and second, etc., are merely used to distinguish one entity or operation from another, and do not necessarily require or imply any actual relationship or order between these entities or operations, nor should they be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Moreover, the terms "comprises," "includes," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprises a..." does not exclude the presence of other identical elements in the process, method, article, or device that includes the element. The singular forms "a", "an" and "the" include plural referents, the term "or" is generally used in a sense including "and / or", the term "several" is generally used in a sense including "at least one", the term "at least two" is generally used in a sense including "two or more", and the term "multiple" is generally used in a sense including "at least two".

[0035] In the description of the present invention, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like, indicating positions or relationships, are based on the positions or relationships shown in the accompanying drawings and are intended only to facilitate the description of the present invention and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limiting the present invention. In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can mean fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention in specific contexts. In addition, in the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0036] For ease of understanding, before introducing the cryopump and semiconductor device provided by the present invention, a brief description of the research background of the present invention is first given.

[0037] Please refer to Figure 1 , which is the working principle diagram of the cryogenic pump. Figure 1 As shown in the figure, in actual application, the cryopump uses activated carbon to adsorb gas molecules at ultra-low temperatures to reduce molecular thermal motion, thereby reducing the pressure of gas molecules, so that the pressure in the process chamber drops below 10E-5, thereby achieving a high vacuum degree in the process chamber, and then the process reaction can be carried out under vacuum conditions.

[0038] However, as time goes by and outgas (exhaust) generated during the process reaction, more and more gas molecules will be adsorbed on the activated carbon. When the activated carbon is saturated with adsorption, it will no longer be able to adsorb new gas molecules, resulting in uncontrollable pressure in the process chamber. The cryogenic pump needs to be stopped for regeneration before it can work again. The regeneration time is generally 4 to 6 hours. At this time, the machine can only be shut down and wait. Often, 3 to 6 cryogenic pumps are installed on the machine, which will result in very long machine downtime, seriously affecting the machine's production efficiency.

[0039] Based on this, the core idea of the present invention is to provide a cryogenic pump and semiconductor equipment, which can solve the problem that the cryogenic pump needs to be shut down for regeneration after working for a period of time, realize the self-regeneration of the cryogenic pump during the working process, ensure that the semiconductor equipment (machine) can work uninterruptedly, and improve the production efficiency of the semiconductor equipment (machine).

[0040] Please refer to Figure 2 , which is a schematic diagram of the overall structure of a cryogenic pump provided by an embodiment of the present invention. Figure 2 As shown, the cryogenic pump provided by the present invention includes a pump body 100, an isolation valve body 200 and a plurality of groups of cryogenic units 300 arranged in the pump body 100; the plurality of groups of cryogenic units 300 are arranged along the inner circumference of the pump body 100, and the plurality of groups of cryogenic units 300 can be independently connected to the process chamber to adsorb the gas in the process chamber; the isolation valve body 200 is arranged at the top of the pump body 100, and the isolation valve body 200 can rotate along the inner circumference of the pump body 100 to isolate the corresponding cryogenic unit 300 from the process chamber, so that the cryogenic unit 300 isolated from the process chamber can be regenerated.

[0041] Therefore, the cryopump provided by the present invention is provided with multiple groups of cryogenic units 300 that can be independently connected to the process chamber in the pump body 100, so that each group of cryogenic units 300 can independently adsorb the gas in the process chamber, thereby achieving a high vacuum degree in the process chamber; at the same time, by providing an isolation valve body 200 that can rotate along the circumference of the pump body 100, the cryogenic units 300 located directly below the isolation valve body 200 can be isolated from the process chamber, so that the regeneration of each group of cryogenic units 300 can be completed independently when isolated from the process chamber, thereby not affecting the vacuum degree in the process chamber. In summary, it can be seen that the present invention can solve the problem that the cryogenic pump needs to be shut down for regeneration after working for a period of time, realize the self-regeneration of the cryogenic pump during operation, ensure that the semiconductor equipment (machine) can work uninterruptedly, and greatly improve the production efficiency of the semiconductor equipment (machine).

[0042] It should be noted that, as those skilled in the art will appreciate, the shape of the isolation valve body 200 is compatible with the shape of the cryogenic unit 300. When the isolation valve body 200 rotates to directly above a cryogenic unit 300, the isolation valve body 200 can isolate the cryogenic unit 300 from the process chamber, thereby enabling the cryogenic unit 300 to self-regenerate. It should also be noted that, as those skilled in the art will appreciate, assuming that N groups of cryogenic units 300 are provided within the pump body 100, during operation of the cryopump, (N-1) groups of cryogenic units 300 can always be kept in operation simultaneously.

[0043] Furthermore, assuming that the preset maximum continuous operating time of each cryogenic unit 300 is T, and the cryogenic unit switching time is E (i.e., the rotation interval of the partition valve body), then T / 2(N-1)<E<T / (N-1). Therefore, by setting the rotation interval of the partition valve body to be greater than T / 2(N-1) and less than T / (N-1), the actual maximum continuous operating time of each cryogenic unit 300 can be ensured to be greater than T / 2 and less than T. This ensures that each cryogenic unit 300 can effectively adsorb and condense gas during actual operation, thereby effectively maintaining a high vacuum level within the process chamber.

[0044] Please continue to refer to Figure 2 ,like Figure 2 As shown, in some exemplary embodiments, the cryopump provided by the present invention further includes a flange 400 mounted on the top of the pump body 100. The flange 400 has a first through hole (not shown in the figure) for connecting the process chamber and the pump body 100, and the isolation valve body 200 is located in the first through hole. Thus, by providing the flange 400, the cryopump provided by the present invention can be fixed to the machine platform where the process chamber is located through the flange 400, thereby further facilitating the installation of the cryopump provided by the present invention. In addition, by arranging the isolation valve body 200 in the first through hole of the flange 400, the internal space of the flange 400 can be fully utilized, thereby helping to simplify the overall structure of the cryopump provided by the present invention.

[0045] Please continue to refer to Figure 2 ,like Figure 2As shown, in some exemplary embodiments, the cryopump provided by the present invention further includes a guide plate 600 disposed within the pump body 100, the guide plate 600 being located above the multiple sets of cryogenic units 300. Thus, by disposing the guide plate 600 above the multiple sets of cryogenic units 300, not only can it serve as a guide, so that the gas in the process chamber can smoothly flow into the area enclosed by the cryogenic units 300 connected to the process chamber to be absorbed by the cryogenic units 300, thereby ensuring that a high vacuum can be achieved in the process chamber, but also, because the guide plate 600 is closest to the process chamber, after the gas in the process chamber enters the pump body 100, water vapor and hydrocarbons in the gas can condense on the guide plate 600.

[0046] It should be noted that, as those skilled in the art will appreciate, the present invention does not limit the specific structure of the guide plate 600 , and the guide plate 600 may include any one of a herringbone shape and a louver shape, or a combination thereof.

[0047] Please continue to refer to Figure 3 , which is a schematic structural diagram of a low-temperature unit 300 provided in one embodiment of the present invention. Figure 3 As shown, in some exemplary embodiments, each group of the low-temperature units 300 includes a radiation hood 310, a cooling head 320 and a regeneration pipe 330. The radiation hood 310 is arranged around the cooling head 320 to form a low-temperature chamber 340. The regeneration pipe 330 can be connected to the low-temperature chamber 340 to provide heated regeneration gas to the low-temperature chamber 340. Thus, the cooling head 320 can provide an ultra-low temperature surface to adsorb and condense the gas flowing into the low-temperature cavity 340 of the low-temperature unit 300 where the cooling head 320 is located; the radiation cover 310 can effectively block heat radiation from entering the low-temperature cavity 340 surrounded by it, thereby effectively ensuring the low-temperature environment in the low-temperature cavity 340, so as to further improve the adsorption and condensation effect of the low-temperature unit 300 on the gas, and thus effectively ensure the vacuum degree in the process cavity; the heated regeneration gas (for example, heated nitrogen) can be passed into the low-temperature cavity 340 through the regeneration pipe 330 to heat the low-temperature cavity 340, thereby removing the solids condensed on the cooling head 320 and realizing the regeneration of the low-temperature unit 300.

[0048] Specifically, the outer surface of the radiation hood 310 has a heat-reflecting coating, and the inner surface of the radiation hood 310 has a heat-absorbing coating. Furthermore, the heat-reflecting coating may be, but is not limited to, a nickel coating with a high heat reflectivity prepared by a spraying method to block external heat radiation; the heat-absorbing coating may be, but is not limited to, a blackened coating with a high absorptivity to block heat radiation from being reflected internally, thereby effectively ensuring the adsorption and condensation effect of the low-temperature unit 300 on the gas.

[0049] Please continue to refer to Figure 3 ,like Figure 3 As shown, in some exemplary embodiments, each set of the cryogenic units 300 further includes a refrigerant pipe 360 for supplying coolant to the cryogenic head 320. Specifically, the cryogenic head 320 is a hollow structure having an inner cavity, and the refrigerant pipe 360 is connected to the inner cavity of the cryogenic head 320. Thus, a coolant (e.g., compressed helium) can be introduced into the inner cavity of the cryogenic head 320 through the refrigerant pipe 360 to reduce the temperature of the cryogenic head 320, thereby enabling the cryogenic head 320 to provide an ultra-low temperature surface.

[0050] Please continue to refer to Figure 3 ,like Figure 3 As shown, in some exemplary embodiments, each set of the low-temperature units 300 further includes an outlet pipe 370 that communicates with the inner cavity of the cooling head 320. Thus, by providing the outlet pipe 370, the heat within the cooling head 320 can be removed through heat exchange under the combined action of the outlet pipe 370 and the refrigerant pipe 360, thereby achieving circulating cooling of the cooling head 320 and effectively ensuring the adsorption and condensation effects of the low-temperature unit 300 on the gas.

[0051] Please continue to refer to Figure 3 ,like Figure 3 As shown, in some exemplary embodiments, each set of cryogenic units 300 further includes multiple sets of condensing plates 350 mounted on the cooling head 320, each of which has an adsorption layer 351 disposed on its inner surface. Thus, by providing multiple sets of condensing plates 350 on the cooling head 320, the ultra-low temperature surface area provided by the cryogenic units 300 can be effectively increased, thereby effectively extending the adsorption and condensation time of gases by the cryogenic units 300. Furthermore, by providing the adsorption layer 351 on the surface of the condensing plates 350, gases such as hydrogen, helium, and neon can be further adsorbed by the adsorption layer 351.

[0052] Specifically, the adsorption layer 351 may be made of, but is not limited to, activated carbon, molecular sieves, porous ceramics, or other materials capable of adsorbing gases. It should be noted that, as will be understood by those skilled in the art, the outer surface of the condensation plate 350 may condense gases such as carbon dioxide, carbon monoxide, oxygen, nitrogen, and argon.

[0053] Please continue to refer to Figure 4 , which is a schematic diagram of the arrangement of the cryogenic unit 300 in the cryogenic pump provided by one embodiment of the present invention. Figure 4 As shown, in some exemplary embodiments, the radiation shields 310 of the multiple groups of cryogenic units 300 are connected to each other. Thus, by connecting the radiation shields 310 of the multiple groups of cryogenic units 300 to each other, the internal space of the pump body 100 can be effectively saved, making it easier to arrange multiple groups of cryogenic units 300 within the pump body 100, thereby effectively improving the vacuuming effect of the cryopump provided by the present invention.

[0054] It should be noted that, although the present invention is described using the example of the cryogenic pump including eight groups of cryogenic units 300, as those skilled in the art will understand, this does not constitute a limitation to the present invention. The number of the cryogenic units 300 can be any value between 2 and 50, and the specific number of the cryogenic units 300 included in the cryogenic pump can be set according to actual needs.

[0055] Please continue to refer to Figure 4 ,like Figure 4 As shown, in some exemplary embodiments, the cross-section of the cryogenic chamber 340 enclosed by the radiation shield 310 of each set of cryogenic units 300 and the cross-section of the isolation valve body 200 are both fan-shaped. Thus, by configuring the cross-sections of the cryogenic chamber 340 and the isolation valve body 200 to be fan-shaped, the area of the region of the pump body 100 communicating with the process chamber (i.e., the total working area of the cryopump) can be maintained constant during the rotation of the isolation valve body 200. This ensures that the vacuum level within the process chamber remains constant during the rotation of the isolation valve body 200, thereby enabling uninterrupted operation of the cryopump without affecting the vacuum level within the process chamber.

[0056] In some exemplary embodiments, the central angles of the low-temperature chambers 340 enclosed by the radiation shields 310 of each set of low-temperature units 300 are equal. Therefore, by setting the central angles of the low-temperature chambers 340 enclosed by the radiation shields 310 of each set of low-temperature units 300 to be equal, it is easier to control the rotation angle of the isolation valve body 200, making it easier to manipulate the isolation valve body 200 to rotate directly above the low-temperature unit 300 that needs to be regenerated, thereby isolating the low-temperature unit 300 that needs to be regenerated from the process chamber.

[0057] Please continue to refer to Figure 4 ,like Figure 4 As shown, in some exemplary embodiments, the cryopump provided by the present invention further includes a driving member 500 connected to the isolation valve body 200, the driving member 500 being configured to drive the isolation valve body 200 to rotate circumferentially along the inner circumference of the pump body 100. Thus, by providing the driving member 500 connected to the isolation valve body 200, the isolation valve body 200 can be automatically driven by the driving member 500 to rotate circumferentially along the inner circumference of the pump body 100, thereby not only facilitating operation but also enabling precise control of the rotation angle of the isolation valve body 200, thereby ensuring that the isolation valve body 200 can successfully isolate the cryogenic unit 300 requiring regeneration from the process chamber.

[0058] Please continue to refer to Figure 4 ,like Figure 4 As shown, in some exemplary embodiments, the driving member 500 is a motor, which is installed at the bottom of the pump body 100, and the rotating shaft of the motor is coaxially arranged with the pump body 100. Thus, by using a motor to drive the isolation valve body 200 to rotate along the inner circumference of the pump body 100, a simple structure, clear logic, and easy implementation can be achieved. In addition, by setting the rotating shaft of the motor to be coaxial with the pump body 100, it is not only easier to arrange multiple groups of low-temperature units 300 in the pump body 100, but also ensure that the motor can smoothly drive the isolation valve body 200 arranged in a fan shape to rotate along the inner circumference of the pump body 100, so that the isolation valve body 200 can smoothly isolate the low-temperature unit 300 that needs to be regenerated from the process chamber.

[0059] Please continue to refer to Figure 4 ,like Figure 4As shown, the motor housing is mounted on the bottom of the pump body 100 and is located outside the pump body 100. The motor shaft extends into the pump body 100. The isolation valve body 200 is connected to the top end of the motor shaft. A seal 700 is provided at the connection between the motor and the pump body 100. Therefore, by providing the seal 700 at the connection between the motor and the pump body 100, the airtightness of the connection between the pump body 100 and the motor can be improved, ensuring the stability of the cryopump provided by the present invention during use.

[0060] It should be noted that, as those skilled in the art can understand, the side of the radiation cover 310 of the multiple groups of low-temperature units 300 close to the central axis of the pump body 100 can be enclosed into an accommodating space for the rotating shaft of the motor to pass through, and the guide plate 600 is provided with a second through hole (not shown in the figure) for the top end of the rotating shaft to pass through.

[0061] In some exemplary embodiments, an encoder is mounted on the motor. Thus, the encoder can sense the motor's rotation angle in real time, thereby precisely controlling the motor to drive the isolation valve body 200 to rotate directly above the cryogenic unit 300 requiring regeneration, thereby ensuring that the isolation valve body 200 can successfully isolate the cryogenic unit 300 requiring regeneration from the process chamber.

[0062] It should be noted that, as will be understood by those skilled in the art, in some other embodiments, the motor may be disposed outside the pump body 100. In still other embodiments, the driving member 500 may be a driving device other than a motor that can drive the isolation valve body 200 to rotate circumferentially along the inner circumference of the pump body 100 (e.g., a rotary cylinder).

[0063] The following combination Figure 5 The specific working principle of the cryogenic pump provided by the utility model is described. Figure 5 This is a working principle diagram of a cryogenic pump provided by one embodiment of the present invention. Figure 5As shown, taking the example that the cryopump includes eight groups of cryogenic units, namely C0, C1, C2, C3, C4, C5, C6, and C7, and the driving member 500 is a motor, it is assumed that the preset maximum continuous working time of each cryogenic unit 300 is T, and the cryogenic unit switching time is set to E (T / 14<E<T / 7), and at the initial moment, the seven cryogenic units C1, C2, C3, C4, C5, C6, and C7 are connected to the process chamber, and the cryogenic unit C0 is isolated from the process chamber under the action of the isolation valve body 200. After the isolation time of the cryogenic unit C0 reaches the cryogenic unit switching time E, the motor controller controls the motor to drive the isolation valve body 200 to rotate (either clockwise or counterclockwise, taking clockwise rotation as an example), as shown. Figure 5 As shown, since the total working area of the cryopump remains constant during rotation, it has little effect on the vacuum level of the process chamber. The motor controller reads the sensing results of the encoder on the motor to determine whether the motor has driven the isolation valve body 200 to rotate to the position corresponding to the cryogenic unit C1. After determining that the motor has driven the isolation valve body 200 to rotate to the position corresponding to the cryogenic unit C1, it controls the motor to stop moving, thereby allowing the isolation valve body 200 to isolate the cryogenic unit C1 from the process chamber, thereby isolating the cryogenic unit C1 and allowing the cryogenic unit C0 to communicate with the process chamber and enter an operating state. The isolated cryogenic unit C1 can self-regenerate. Since the time it takes for the cryogenic unit C1 to complete regeneration is less than the cryogenic unit switching time E, the cryogenic unit C1 can be successfully regenerated within the time E. After cryogenic unit C1 has been in the isolated state for a period of time equal to the cryogenic unit switching time E, the motor controller again controls the motor to drive the isolation valve body 200 to rotate clockwise until the motor drives the isolation valve body 200 to rotate to a position corresponding to cryogenic unit C2. This allows the isolation valve body 200 to isolate cryogenic unit C2 from the process chamber, isolating it and allowing the regenerated cryogenic unit C1 to reconnect to the process chamber and enter an operational state. The isolated cryogenic unit C2 can self-regenerate, and so on, ensuring that the cryopump remains operational. The regeneration of cryogenic units C0-C7 is completed independently during isolation, without affecting the vacuum level within the entire process chamber. This allows for uninterrupted operation of the semiconductor equipment (tool), effectively improving the production efficiency of the semiconductor equipment (tool).

[0064] To achieve the above-mentioned principles, the present invention further provides a semiconductor device comprising a platform having at least one process chamber and at least one cryopump as described above, the cryopump being mounted on the platform. Since the semiconductor device provided by the present invention includes the cryopump provided by the present invention, the semiconductor device provided by the present invention possesses at least all the beneficial effects of the cryopump provided by the present invention. For details regarding the beneficial effects of the semiconductor device provided by the present invention, reference may be made to the above description of the beneficial effects of the cryopump provided by the present invention, and no further elaboration is required here.

[0065] It should be noted that, as those skilled in the art will appreciate, the semiconductor equipment may be, but is not limited to, equipment that requires a vacuum environment, such as a vacuum coating equipment and an ion implanter.

[0066] In summary, compared with the prior art, the cryopump and semiconductor device provided by the present invention have the following beneficial effects:

[0067] (1) The present invention sets a plurality of groups of low-temperature units 300 that can be independently connected to the process chamber in the pump body 100, so that each group of low-temperature units 300 can independently adsorb the gas in the process chamber, thereby achieving a high vacuum degree in the process chamber; at the same time, by setting an isolation valve body 200 that can rotate along the circumference of the pump body 100, the low-temperature units 300 located directly below the isolation valve body 200 can be isolated from the process chamber, so that the regeneration of each group of the low-temperature units 300 can be completed independently when isolated from the process chamber, thereby not affecting the vacuum degree in the process chamber.

[0068] (2) The present invention can solve the problem that the cryogenic pump needs to be shut down for regeneration after working for a period of time, and realize the self-regeneration of the cryogenic pump during the working process, ensuring that the semiconductor equipment (machine) can work uninterruptedly, thereby greatly improving the production efficiency of the semiconductor equipment (machine).

[0069] (3) The present invention ensures that the area of the region in the pump body 100 that is connected to the process chamber remains unchanged during the rotation of the isolation valve body 200 by setting the cross-section of the low-temperature chamber 340 surrounded by the radiation cover 310 of each group of the low-temperature units 300 and the cross-section of the isolation valve body 200 to be fan-shaped, thereby ensuring that the vacuum degree in the process chamber remains unchanged during the rotation of the isolation valve body 200, and further achieving uninterrupted operation of the low-temperature pump without affecting the vacuum degree in the process chamber.

[0070] (4) The present invention uses a motor to drive the isolation valve body 200 to rotate along the inner circumference of the pump body 100, which can achieve the effect of simple structure, clear logic, and easy implementation.

[0071] It should be noted that, in the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are mutually inconsistent.

[0072] It should also be noted that the above description is merely a description of preferred embodiments of the present invention and does not limit the scope of the present invention. Any changes or modifications made by persons skilled in the art based on the above disclosure are within the scope of protection of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations fall within the scope of the present invention and its equivalents, the present invention is intended to include such modifications and variations.

Claims

1. A cryopump, characterized in that: It comprises a pump body, an isolation valve body and a plurality of low-temperature units arranged in the pump body; The multiple groups of low-temperature units are arranged along the inner circumference of the pump body, and the multiple groups of low-temperature units can be independently connected to the process chamber to adsorb the gas in the process chamber; The isolation valve body is arranged on the top of the pump body, and the isolation valve body can rotate circumferentially along the inner circumference of the pump body to isolate the corresponding low-temperature unit from the process chamber, so that the low-temperature unit isolated from the process chamber can be regenerated.

2. The cryopump according to claim 1, wherein The invention also includes a flange installed on the top of the pump body, wherein the flange has a through hole for connecting the process chamber and the pump body, and the isolation valve body is located in the through hole.

3. The cryopump according to claim 1, wherein Each group of the low-temperature units includes a radiation cover, a refrigeration head and a regeneration pipe. The radiation cover is arranged around the refrigeration head to form a low-temperature cavity. The regeneration pipe can be connected to the low-temperature cavity to provide heated regeneration gas to the low-temperature cavity.

4. The cryopump according to claim 3, wherein The radiation shields of the multiple groups of low-temperature units are connected to each other.

5. The cryopump according to claim 4, wherein The cross section of the low-temperature cavity surrounded by the radiation shields of each group of low-temperature units and the cross section of the isolation valve body are both fan-shaped.

6. The cryopump according to claim 4, wherein The central angles of the low-temperature cavities surrounded by the radiation covers of each group of low-temperature units are equal.

7. The cryopump according to claim 3, wherein Each group of the low-temperature units further includes a plurality of condensation plates mounted on the refrigeration head, and an adsorption layer capable of adsorbing gas is provided on the inner surface of the condensation plates.

8. The cryopump according to claim 1, wherein The pump further comprises a driving member connected to the isolation valve body, wherein the driving member is used to drive the isolation valve body to rotate along the inner periphery of the pump body.

9. The cryopump according to claim 1, wherein It also includes a guide plate arranged in the pump body, and the guide plate is located above the multiple groups of low-temperature units.

10. A semiconductor device, characterized in that: The invention comprises a tool having at least one process chamber and at least one cryopump according to any one of claims 1 to 9, wherein the cryopump is installed on the tool.

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