Anti-static wafer cutting protective film

Abstract

The utility model discloses an anti-static wafer cutting protective film which comprises a release film layer, a visbreaking layer, a first anti-static layer and a base material layer, the visbreaking layer is connected to the outer side of the release film layer in a bonding mode, the first anti-static layer is connected to the outer side of the visbreaking layer in a bonding mode, the base material layer is connected to the outer side of the first anti-static layer in a bonding mode, and the base material layer is connected to the outer side of the first anti-static layer in a bonding mode. The outer side of the base material layer is connected with a high-temperature-resistant layer in a bonding mode, the outer side of the high-temperature-resistant layer is connected with a second anti-static layer in a bonding mode, the outer side of the second anti-static layer is connected with a bonding layer in a bonding mode, and the outer side of the bonding layer is connected with a dustproof layer in a bonding mode. According to the anti-static wafer cutting protective film, the first anti-static layer and the second anti-static layer are installed on the upper side and the lower side of the base material layer, and when a wafer is cut, carbon fibers on the inner sides of the first anti-static layer and the second anti-static layer can guide static electricity accumulated on the surfaces into the ground in time through good conductivity of the carbon fibers; therefore, electrostatic discharge is avoided, the wafer is protected, and the reliability and the use safety of the wafer are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of protective films, in particular to an anti-static wafer cutting protective film. Background Art

[0002] In order to protect the wafer from contamination and scratches on the wafer surface during the wafer cutting process, a protective film needs to be provided on the wafer surface, thereby protecting the cut wafer through the protective film.

[0003] Application number CN202211103648.2 discloses a wafer cutting protective film and its use method. The wafer cutting protective film comprises a silicone oil release layer, a polyvinyl chloride layer, a polyester coating, and an adhesive layer; the silicone oil release layer, polyvinyl chloride layer, polyester coating, and adhesive layer are applied and bonded from top to bottom. The addition of 2-hydroxyethyl acrylate, with the weight percentage of 2-hydroxyethyl acrylate in the ethyl ester controlled to be 1.65-1.77%, ensures that when applied to the wafer, the protective film not only has suitable viscosity (100-150g / 25mm), but also protects the wafer from damage during the cutting process and makes it easy to peel after processing without residual glue or ghosting. More importantly, it is not easy to produce glue threads during the cutting process, indirectly ensuring the quality of the wafer being cut. In addition, the protective film also has stable mechanical properties such as toughness.

[0004] However, the device does not have an anti-static structure. When cutting the wafer, a large amount of static electricity will be generated. The accumulated static electricity can produce a voltage of up to tens of thousands of volts. If such a high voltage suddenly discharges on the outer surface of the wafer, it will easily damage the circuit part inside the wafer, thereby affecting the electrical performance and reliability of the wafer.

[0005] In response to the above problems, it is urgent to carry out innovative design based on the original anti-static wafer cutting protective film structure. Utility Model Content

[0006] The purpose of the present utility model is to provide an anti-static wafer cutting protective film to solve the problem proposed in the above background technology that the device is not provided with an anti-static structure, and a large amount of static electricity will be generated when the wafer is cut. The accumulated static electricity can generate a voltage of up to tens of thousands of volts. If such a high voltage is suddenly discharged on the outer surface of the wafer, it will easily damage the inner circuit part of the wafer, thereby affecting the electrical performance and reliability of the wafer.

[0007] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: an anti-static wafer cutting protective film, comprising a release film layer, a viscosity-reducing layer, a first anti-static layer, and a substrate layer, the release film layer is bonded to the outside with the viscosity-reducing layer, and the viscosity-reducing layer is bonded to the outside with the first anti-static layer, the first anti-static layer is bonded to the outside with the substrate layer, and the substrate layer is bonded to the outside with a high-temperature resistant layer, the high-temperature resistant layer is bonded to the outside with the second anti-static layer, the second anti-static layer is bonded to the outside with an adhesive layer, and the adhesive layer is bonded to the outside with a dustproof layer, and the dustproof layer is bonded to the outside with abrasive particles.

[0008] Preferably, the release film layer and the viscosity-reducing layer, the viscosity-reducing layer and the first antistatic layer, the first antistatic layer and the substrate layer, the substrate layer and the high-temperature resistant layer, the high-temperature resistant layer and the second antistatic layer, the second antistatic layer and the adhesive layer, and the adhesive layer and the dustproof layer are all bonded and connected by an adhesive.

[0009] Preferably, the material used for the viscosity-reducing layer is silicone oil; silicone oil is a commonly used viscosity-reducing agent with good lubricity and chemical stability. By coating or co-extrusion, silicone oil can be evenly distributed on the protective film to form a thin viscosity-reducing layer.

[0010] Preferably, the release film layer includes a release substrate, a primer, and a release agent. The release substrate is arranged on the inner side of the release film layer, and the primer is bonded to the bottom of the release substrate, and the release agent is bonded to the bottom of the primer. The release substrate is usually a plastic film such as PET, PE, OPP, etc. The primer is used to enhance the bonding force between the film and the release agent; the release agent is the key substance that gives the film non-stickiness.

[0011] Preferably, the first antistatic layer and the second antistatic layer are made of carbon fiber, and the first antistatic layer and the second antistatic layer are distributed on the upper and lower sides of the substrate layer; carbon fiber has good conductive properties and can conduct accumulated static electricity to the ground.

[0012] Preferably, the abrasive particles are evenly distributed on the upper surface of the dustproof layer; the abrasive particles can reduce the smoothness of the outer side of the protective film and improve the accuracy of cutting.

[0013] Compared with the prior art, the beneficial effect of the present invention is that the antistatic wafer cutting protective film is provided with:

[0014] 1. Anti-static structure: This structure installs a first anti-static layer and a second anti-static layer on the upper and lower sides of the base material layer. When the wafer is cut, the carbon fibers inside the first and second anti-static layers will conduct the static electricity accumulated on the surface to the ground in time through their own good conductivity, thereby avoiding electrostatic discharge, protecting the wafer, and improving the reliability and safety of the wafer.

[0015] 2. High-temperature resistant structure: This structure sets a high-temperature resistant layer on the inner side of the protective film. The excellent high-temperature resistance of the high-temperature resistant layer ensures the stability and integrity of wafer cutting. The outermost layer of the protective film is provided with a dustproof layer and abrasive particles. The abrasive particles reduce the smoothness of the outer layer of the protective film, improving the accuracy of wafer cutting. The dustproof layer can effectively prevent dust and debris from entering the protective film, thereby protecting the cleanliness of the wafer surface.

[0016] 3. The structure is easy to peel off. The adhesion-reducing layer is located at the bottom of the protective film. Before UV irradiation, the protective film has a high adhesion force, which can ensure the stability of the wafer during the processing. After UV irradiation, the adhesion force almost disappears, making the wafer easy to peel off without residual glue. The release film layer is used to protect the internal layers from damage during the processing and can be easily peeled off during final use. It has a certain strength and stability, which can ensure the integrity of the protective film during the wafer processing process. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the overall decomposition structure of the utility model;

[0018] Figure 2 This is a schematic diagram of the overall three-dimensional structure of the utility model;

[0019] Figure 3 For this utility model Figure 2 A in the middle is an enlarged structural diagram;

[0020] Figure 4 This is a schematic diagram of the three-dimensional structure of the adhesive layer of the utility model;

[0021] Figure 5 This is a schematic diagram of the decomposed structure of the adhesive layer and the dustproof layer of the utility model;

[0022] Figure 6 This is a schematic diagram of the decomposed structure of the release film layer of the utility model.

[0023] In the figure: 1. Release film layer; 101. Release substrate; 102. Primer; 103. Release agent; 2. Anti-viscosity layer; 3. First antistatic layer; 4. Substrate layer; 5. High temperature resistant layer; 6. Second antistatic layer; 7. Adhesive layer; 8. Dustproof layer; 9. Abrasive particles. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0025] See also Figures 1-6 The utility model provides a technical solution: an antistatic wafer cutting protective film, comprising a release film layer 1, a viscosity-reducing layer 2, a first antistatic layer 3, and a base material layer 4. The release film layer 1 is bonded to the outside with the viscosity-reducing layer 2, and the viscosity-reducing layer 2 is bonded to the outside with the first antistatic layer 3, the first antistatic layer 3 is bonded to the outside with the base material layer 4, and the base material layer 4 is bonded to the outside with a high-temperature resistant layer 5, the high-temperature resistant layer 5 is bonded to the outside with a second antistatic layer 6, the second antistatic layer 6 is bonded to the outside with an adhesive layer 7, and the adhesive layer 7 is bonded to the outside with a dustproof layer 8, and the dustproof layer 8 is bonded to the outside with abrasive particles 9; the release film layer 1 and the viscosity-reducing layer 2, the viscosity-reducing layer 2 and the first antistatic layer 3, the first antistatic layer 3 The substrate layer 4, the substrate layer 4 and the high-temperature resistant layer 5, the high-temperature resistant layer 5 and the second antistatic layer 6, the second antistatic layer 6 and the adhesive layer 7, and the adhesive layer 7 and the dustproof layer 8 are all bonded and connected by an adhesive; the material used for the viscosity-reducing layer 2 is silicone oil; the release film layer 1 includes a release substrate 101, a primer 102, and a release agent 103, the release substrate 101 is arranged on the inner side of the release film layer 1, and the bottom of the release substrate 101 is bonded and connected to the primer 102, and the bottom of the primer 102 is bonded and connected to the release agent 103; the material used for the first antistatic layer 3 and the second antistatic layer 6 is carbon fiber, and the first antistatic layer 3 and the second antistatic layer 6 are distributed on the upper and lower sides of the substrate layer 4; the abrasive particles 9 are equidistantly distributed on the upper surface of the dustproof layer 8;

[0026] This structure is achieved by installing a first antistatic layer 3 and a second antistatic layer 6 on the upper and lower sides of a substrate layer 4. When the wafer is cut, the carbon fibers inside the first antistatic layer 3 and the second antistatic layer 6 will promptly conduct the static electricity accumulated on the surface to the ground through their own good conductivity, thereby avoiding electrostatic discharge, protecting the wafer, and improving the reliability and safety of the wafer. A high-temperature resistant layer 5 is provided on the inside of the protective film. The excellent high-temperature resistance of the high-temperature resistant layer 5 ensures the stability and integrity of the wafer cutting. A dustproof layer 8 and abrasive particles 9 are provided on the outermost layer of the protective film. The abrasive particles 9 reduce the protection. The smooth outer layer of the protective film improves the accuracy of wafer cutting. The dustproof layer 8 can effectively prevent dust and debris from entering the interior of the protective film, thereby protecting the cleanliness of the wafer surface. A viscosity-reducing layer 2 is provided at the bottom of the protective film. Before UV irradiation, the protective film has a high adhesion force, which can ensure the stability of the wafer during the processing process. After UV irradiation, the adhesion force almost disappears, making the wafer easy to peel off without residual glue. The release film layer 1 is used to protect the internal layers from damage during the processing process and can be easily peeled off during final use. It has certain strength and stability, which can ensure the integrity of the protective film during the wafer processing process.

[0027] The contents not described in detail in this specification belong to the prior art known to those skilled in the art.

[0028] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An antistatic wafer cutting protective film, comprising a release film layer (1), a viscosity-reducing layer (2), a first antistatic layer (3), and a substrate layer (4), characterized in that: The release film layer (1) is bonded to an outside of a reducing adhesion layer (2), and the reducing adhesion layer (2) is bonded to an outside of a first antistatic layer (3), the first antistatic layer (3) is bonded to an outside of a base material layer (4), and the base material layer (4) is bonded to an outside of a high-temperature resistant layer (5), the high-temperature resistant layer (5) is bonded to an outside of a second antistatic layer (6), the second antistatic layer (6) is bonded to an outside of an adhesive layer (7), and the adhesive layer (7) is bonded to an outside of a dustproof layer (8), and the dustproof layer (8) is bonded to an outside of abrasive particles (9).

2. The antistatic wafer dicing protective film according to claim 1, characterized in that: The release film layer (1) and the anti-sticking layer (2), the anti-sticking layer (2) and the first antistatic layer (3), the first antistatic layer (3) and the base material layer (4), the base material layer (4) and the high-temperature resistant layer (5), the high-temperature resistant layer (5) and the second antistatic layer (6), the second antistatic layer (6) and the adhesive layer (7), and the adhesive layer (7) and the dustproof layer (8) are all bonded and connected by an adhesive.

3. The antistatic wafer dicing protective film according to claim 1, characterized in that: The material used for the viscosity-reducing layer (2) is silicone oil.

4. The antistatic wafer dicing protective film according to claim 1, characterized in that: The release film layer (1) comprises a release substrate (101), a primer (102), and a release agent (103); the release substrate (101) is arranged on the inner side of the release film layer (1), and the base glue (102) is bonded to the bottom of the release substrate (101), and the release agent (103) is bonded to the bottom of the base glue (102).

5. The antistatic wafer dicing protective film according to claim 1, characterized in that: The first antistatic layer (3) and the second antistatic layer (6) are made of carbon fiber, and the first antistatic layer (3) and the second antistatic layer (6) are distributed on the upper and lower sides of the base material layer (4).

6. The antistatic wafer dicing protective film according to claim 1, characterized in that: The abrasive particles (9) are distributed equidistantly on the upper surface of the dustproof layer (8).

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