Thin film deposition apparatus

Abstract

The utility model discloses thin film deposition equipment which comprises a deposition chamber used for providing a closed environment for thin film deposition, a first heating mechanism integrated in the deposition chamber and a thin film deposition excitation device integrated in the deposition chamber, and the thin film deposition excitation device is used for converting a precursor in the deposition chamber into a deposition layer; the first conveying device is arranged in the deposition chamber and is used for transferring samples among a plurality of stations and driving the samples to reciprocate at the selected station; the vacuumizing mechanism is connected with the deposition chamber and used for adjusting the vacuum degree in the deposition chamber; the precursor supply device is connected with the deposition chamber and is used for supplying a precursor into the deposition chamber; and the by-product treatment module is connected with the deposition chamber and is used for collecting and / or purifying by-products generated in the deposition chamber and residual precursors. The device has a reasonable layout of a byproduct treatment system, and can effectively prolong the equipment maintenance period and protect the environmental safety.

Description

Technical Field

[0001] The utility model particularly relates to a thin film deposition device, belonging to the technical field of semiconductor manufacturing equipment. Background Art

[0002] Thin film deposition processes include atomic layer deposition (ALD), physical vapor deposition (PVD), etc. Atomic layer deposition (ALD) is a method of depositing substances layer by layer on the surface of a substrate in the form of single atoms. In the ALD process, the chemical reaction of a new layer of atomic film is directly related to the previous layer, so that only one layer of atoms is deposited each time. The main reactants of ALD are two chemical substances, usually called precursors. The precursors react continuously and self-limitingly with the surface of the material, thereby achieving the deposition of thin films. Physical vapor deposition (PVD) is a technology that deposits thin films through physical mechanisms, such as evaporation and sputtering. The PVD process does not involve chemical reactions, so the deposited materials are of high purity and stable quality. Sputtering technology has the advantages of fast deposition rate, accurate deposition thickness control, precise composition control and low manufacturing cost, and is widely used in the semiconductor industry.

[0003] The process of thin film deposition is inevitably accompanied by the generation of by-products and excessive precursors. Therefore, these by-products and excess precursors need to be processed during thin film deposition to prevent the by-products from contaminating the deposited film. The current existing systems can generally only filter solid particles. If harmful gas by-products need to be filtered, an exhaust gas treatment plant needs to be built on the factory side. The main equipment includes combustion towers, acidic water spray towers, alkaline water spray towers and other equipment. These things have high construction costs and take up more space. Summary of the Invention

[0004] The main purpose of the utility model is to provide a thin film deposition device, thereby overcoming the deficiencies in the prior art.

[0005] In order to achieve the aforementioned invention objectives, the technical solutions adopted by the present invention include:

[0006] The present invention provides a thin film deposition device, comprising:

[0007] A deposition chamber, at least for providing a sealed environment for thin film deposition, wherein a first heating mechanism is integrated into the deposition chamber, and a thin film deposition excitation device is also integrated into the deposition chamber, wherein the thin film deposition excitation device is used to convert the precursor in the deposition chamber into a deposition layer;

[0008] a first conveying device, disposed in the deposition chamber and at least used to transfer samples between a plurality of workstations and to drive the samples to reciprocate at a selected workstation;

[0009] a vacuum pumping mechanism connected to the deposition chamber and at least used to adjust the vacuum level in the deposition chamber;

[0010] a precursor supply device connected to the deposition chamber and used to supply the precursor into the deposition chamber;

[0011] A by-product processing module is connected to the deposition chamber and is at least used to collect and / or purify the by-products and remaining precursors generated in the deposition chamber.

[0012] Compared with the prior art, the advantages of the present invention include: a thin film deposition device provided by an embodiment of the present invention has a reasonable by-product treatment system layout, which can effectively extend the equipment maintenance cycle and protect environmental safety, while reducing equipment costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a schematic structural diagram of a thin film deposition device provided in a typical embodiment of the present invention;

[0014] Figure 2 It is a schematic structural diagram of an inverted pin perovskite solar cell. DETAILED DESCRIPTION

[0015] In view of the shortcomings of the prior art, the inventors of this case have proposed the technical solution of the present utility model after long-term research and extensive practice. The following will further explain this technical solution, its implementation process and principles, etc. with reference to the accompanying drawings. Unless otherwise specified, the functional mechanisms in the embodiments of the present utility model are known to those skilled in the art.

[0016] The present invention provides a thin film deposition device, comprising:

[0017] A deposition chamber, at least for providing a sealed environment for thin film deposition, wherein a first heating mechanism is integrated into the deposition chamber, and a thin film deposition excitation device is also integrated into the deposition chamber, wherein the thin film deposition excitation device is used to convert the precursor in the deposition chamber into a deposition layer;

[0018] a first conveying device, disposed in the deposition chamber and at least used to transfer samples between a plurality of workstations and to drive the samples to reciprocate at a selected workstation;

[0019] a vacuum pumping mechanism connected to the deposition chamber and at least used to adjust the vacuum level in the deposition chamber;

[0020] a precursor supply device connected to the deposition chamber and used to supply the precursor into the deposition chamber;

[0021] A by-product processing module is connected to the deposition chamber and is at least used to collect and / or purify the by-products and remaining precursors generated in the deposition chamber.

[0022] Furthermore, the by-product processing module is also connected to the vacuum pumping mechanism, and the by-product processing module and the vacuum pumping mechanism are arranged on the same medium passage.

[0023] Furthermore, the by-product processing module includes a plasma ionization device, a dust filtering device and an acid-base treatment device. The plasma ionization device, the dust filtering device and the acid-base treatment device are connected in sequence. The plasma ionization device is directly connected to the deposition chamber. The vacuum mechanism is arranged between the dust filtering device and the acid-base treatment device, and is respectively connected to the dust filtering device and the acid-base treatment device.

[0024] Furthermore, a butterfly valve is provided on the connecting pipeline between the dust filtering device and the vacuum pumping mechanism.

[0025] Furthermore, the plasma ionization device is connected to the deposition chamber via a second connecting pipe, and is connected to the dust filtering device, vacuum pumping mechanism, and acid-base treatment device in sequence via a fourth connecting pipe, wherein the second connecting pipe is also provided with a second ball valve having two working states of open and closed.

[0026] In a more specific embodiment, the thin film deposition apparatus further comprises:

[0027] A preheating chamber, wherein a second heating mechanism is integrated in the preheating chamber, and the preheating chamber and the deposition chamber have two working states: interconnected and isolated from each other;

[0028] a second conveying device, disposed in the preheating chamber and at least used to transfer the sample from the preheating chamber to the first conveying device in the deposition chamber;

[0029] Furthermore, the preheating chamber is also connected to the vacuum pumping mechanism, and the vacuum pumping mechanism is also used to adjust the vacuum degree in the preheating chamber.

[0030] Furthermore, the preheating chamber is indirectly connected to the vacuum mechanism via the plasma ionization device and the dust filtering device in sequence.

[0031] Furthermore, the plasma ionization device is connected to the preheating chamber via a first connecting pipeline, and a first ball valve having two working states of open and closed is further provided on the first connecting pipeline.

[0032] In a more specific embodiment, the thin film deposition apparatus further comprises:

[0033] A discharge chamber, wherein a third heating mechanism is integrated in the discharge chamber, and the discharge chamber and the deposition chamber have two working states: interconnected and isolated from each other;

[0034] a third conveying device, disposed in the unloading chamber and at least used to transfer the sample from the unloading chamber to the first conveying device in the deposition chamber;

[0035] Furthermore, the unloading chamber is also connected to the vacuum pumping mechanism, and the vacuum pumping mechanism is also used to adjust the vacuum degree in the unloading chamber.

[0036] Furthermore, the unloading chamber is indirectly connected to the unloading chamber via the plasma ionization device and the dust filtering device in sequence.

[0037] Furthermore, the plasma ionization device is connected to the discharge chamber via a third connecting pipeline, and the third connecting pipeline is further provided with a third ball valve having two working states of open and closed.

[0038] Furthermore, the thin film deposition excitation device includes an atomic layer deposition excitation device and a physical vapor deposition excitation device, the atomic layer deposition excitation device is used to convert the first precursor in the deposition chamber into an atomic layer deposition layer, and the physical vapor deposition excitation device is at least used to convert the second precursor in the deposition chamber into a physical vapor deposition layer.

[0039] The utility model is particularly important for the PSCs industry. If the product PVSK is exposed to water and oxygen in the air for a long time during the process flow, it will cause degradation; in addition, during the process flow, the device will inevitably be contaminated by the external environment, and these problems will affect the performance of the device.

[0040] In a typical implementation case, a thin film deposition device provided by an embodiment of the present invention mainly includes the following functional devices and meets the following requirements:

[0041] Equipment structure: For both PVD evaporation source and ALD source, the bottom-out deposition method can be adopted. The equipment should have a shared deposition area for atomic layer deposition and physical vapor deposition; the plasma ionization device is installed upstream of the dust filter device, so that the solid particles generated by the reaction of excess chemical precursors after ionization can be collected by the dust filter device, and the dust filter device is installed at the front end / upstream of the vacuum mechanism and the butterfly valve, so as to maximize the protection of the vacuum mechanism and the butterfly valve; optionally, a preheating chamber and a unloading chamber with independently controlled vacuuming are installed upstream and downstream of the deposition chamber, and are equipped with corresponding functions (hardware) to realize heating, sample transmission and other functions, so as to further improve production efficiency.

[0042] Deposition chamber: The deposition chamber should have high vacuum, high temperature, and constant temperature control to meet the requirements of different deposition processes. It should also be equipped with a gas introduction system, temperature control system, and pressure control system.

[0043] Isolation device: Different processes should have good isolation (device) hardware. For example, the isolation device in the deposition chamber can effectively protect the transmission part below the deposition chamber and reduce maintenance steps. Multiple baffles are used for atomic layer deposition and physical vapor deposition. The precursor supply lines have good isolation performance when using different process methods to prevent cross-contamination of precursors.

[0044] Precursor supply: To meet the needs of atomic layer deposition and physical vapor deposition, the equipment should be equipped with two or more precursor supply devices. The precursors used in atomic layer deposition are usually metal organic compounds; the precursors used in physical vapor deposition can be metals, alloys, carbides, nitrides, oxides, mixtures, etc.

[0045] Monitoring device: The equipment should be equipped with a real-time monitoring device to monitor key parameters in the deposition process, such as deposition rate, film thickness, deposition temperature, chamber pressure, etc. The monitoring device will feed these key parameters back to the control device. The control device can adjust the working parameters of the corresponding functional devices in real time based on these parameters to achieve excellent film performance and save and record relevant data.

[0046] Controls: The equipment should be equipped with comprehensive control systems to achieve precise control of the atomic layer deposition and physical vapor deposition processes. These controls should include deposition rate control, temperature control, pressure control, gas flow control, and pumping speed control to ensure stability and repeatability of the ALD and PVD film deposition processes.

[0047] Conveyor: The equipment should be equipped with a conveyor to facilitate switching between atomic layer deposition and physical vapor deposition. The conveyor should have high precision and high reliability to ensure the continuity and consistency of the deposition process.

[0048] Safety measures: In view of the harmful gases and high temperature environment that may be generated during atomic layer deposition and physical vapor deposition, the equipment should have comprehensive safety measures, such as gas leak detection, temperature over-limit alarm, vacuum leak detection, etc. These functions can be achieved by monitoring devices.

[0049] In a typical implementation case, please refer to Figure 1 , a thin film deposition device, comprising:

[0050] The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are connected in sequence. The entrance of the preheating chamber 101 is provided with a first chamber door 1303 that can be opened and closed. The communication port between the preheating chamber 101 and the deposition chamber 102 is provided with a second chamber door 1301 that can be opened and closed. The communication port between the deposition chamber 102 and the unloading chamber 103 is provided with a third chamber door 1302 that can be opened and closed. The exit of the unloading chamber 103 is provided with a fourth chamber door 1304 that can be opened and closed. A plurality of process windows and a plurality of baffles are provided on the top, each baffle being matched with at least one process window, and the baffles being used to open and close the process windows. The plurality of process windows include a first process window, a second process window, a third process window, a fourth process window, a fifth process window, a sixth process window, and a seventh process window. The plurality of baffles include a first baffle 601, a second baffle 602, a third baffle 603, a fourth baffle 604, a fifth baffle 605, a sixth baffle 606, and a seventh baffle 607. The seven baffles correspond to the seven windows one by one.

[0051] A second conveyor 401 is provided in the preheating chamber 101, a first conveyor 402 is provided in the deposition chamber 102, and a third conveyor 403 is provided in the unloading chamber 103. The second conveyor 401, the first conveyor 402, and the third conveyor 403 are coordinated end to end to realize the conveyance / transfer of samples in the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103;

[0052] The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are all provided with heating mechanisms. The preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 are also respectively connected to the vacuum pump 1101 via connecting pipelines. The connecting pipelines include three branch pipelines and one main pipeline. The three branch pipelines are respectively connected to the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103. The three branch pipelines are connected to the main pipeline, and the main pipeline is connected to the vacuum pump 1101. A first ball valve 1001 is provided on the branch pipeline between the preheating chamber 101 and the vacuum pump 1101, a second ball valve 1002 is provided on the branch pipeline between the deposition chamber 102 and the vacuum pump 1101, and a third ball valve 1003 is provided on the branch pipeline between the unloading chamber 103 and the vacuum pump 1101.

[0053] a plurality of first precursor supply devices and a plurality of second precursor supply devices, wherein the plurality of first precursor supply devices correspond to and are connected to the first process window, the third process window, and the fifth process window, respectively; the first precursor supply devices are used to provide the first precursor required for atomic layer deposition from the process window corresponding thereto into the deposition chamber; a plurality of second precursor supply devices correspond to and are connected to the second process window, the fourth process window, the seventh process window, and the sixth process window, respectively; the second precursor supply devices are used to provide the second precursor required for physical vapor deposition from the process window corresponding thereto into the deposition chamber;

[0054] A first chemical source control device, a second chemical source control device, a third chemical source control device, and a plurality of atomic layer deposition excitation mechanisms. The first chemical source control device, the second chemical source control device, and the third chemical source control device respectively cooperate with the plurality of first precursor supply devices and control the working states and working parameters of the first precursor supply devices. The plurality of atomic layer deposition excitation mechanisms are disposed in the deposition chamber 102 and are used to convert the first precursor in the deposition chamber into an atomic layer deposition layer.

[0055] The first sputtering power supply, the second sputtering power supply, the third sputtering power supply, and the fourth sputtering power supply correspond to the second process window, the fourth process window, the seventh process window, and the sixth process window respectively. The first sputtering power supply, the second sputtering power supply, the third sputtering power supply, and the fourth sputtering power supply cooperate with the target material to transform the second precursor in the deposition chamber into a physical vapor deposition layer.

[0056] It should be noted that Figure 1 A thin film deposition device shown in the figure does not show a monitoring device and a control device. The specific structure of the monitoring device and the control device, as well as the structure and method of cooperating with other functional devices, are all known to those skilled in the art and will not be elaborated on here. Specifically, the monitoring device is used to monitor at least one of the deposition rate of the physical vapor deposition layer / atomic layer deposition layer, the thickness of the physical vapor deposition layer / atomic layer deposition layer, the temperature in the deposition chamber, and the pressure. More specifically, the monitoring device may include a temperature sensor, an air pressure sensor, a visual monitor, and processing software that cooperates with the visual monitor. The temperature sensor and the air pressure sensor are arranged inside the deposition chamber, and the visual monitor can be arranged inside or outside the deposition chamber. The structure and composition of the monitoring device itself and the method of realizing the above functions are all known to those skilled in the art and will not be specifically limited here. More specifically, the monitoring device also includes a safety monitoring mechanism, which is used to monitor and alarm information such as gas leakage, temperature exceeding the standard, and vacuum leakage in the deposition chamber.

[0057] Of course, the thin film deposition device provided by the embodiment of the present invention also includes other functional mechanisms that can enable it to achieve atomic layer deposition and physical vapor deposition. These are all known to those skilled in the art and will not be elaborated here.

[0058] Specifically, the vacuum pump (i.e., vacuum pumping mechanism) 1101 in this embodiment can realize vacuum pumping of the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103 to adjust the vacuum degree in the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103.

[0059] Specifically, the structures of the second conveying device 401, the first conveying device 402, and the third conveying device 403 in the present invention can be the same. The second conveying device 401, the first conveying device 402, and the third conveying device 403 can be a conveyor belt structure, a chain conveying structure, a roller conveying structure, etc. Exemplarily, the first conveying device 402 includes a transmission structure and a motion execution structure. The transmission structure and the motion execution structure are coordinated in transmission. The motion execution structure is directly coordinated with the sample. In addition, an isolation mechanism 501 is also provided in the deposition chamber. The motion execution structure is arranged on the side of the isolation mechanism 501 close to the process window, and the motion execution structure is arranged on the side of the isolation mechanism 501 facing away from the process window. The isolation mechanism 501 can prevent the first precursor and the second precursor from causing corrosion and other damage to the transmission structure, thereby protecting the transmission structure. It should be noted that the isolation mechanism 501 can be a partition with holes, etc., and the balls or rollers contained in the motion execution structure are correspondingly exposed in the openings of the partition.

[0060] For details, please refer to Figure 1 , a thin film deposition device provided by an embodiment of the present invention also includes a by-product processing module, which is connected to the preheating chamber 101, the deposition chamber 102, and the unloading chamber 103, and is at least used to collect and / or purify the by-products generated in the deposition chamber 102 and the remaining first precursor and second precursor. Specifically, the by-product processing module includes a plasma ionization device 701, a dust filtering device 801 and an acid-base treatment device 1201. The plasma ionization device 701 and the dust filtering device 801 are sequentially arranged on the main line between the vacuum pump 1101 and the deposition chamber 102. A butterfly valve 901 is also provided on the main line between the dust filtering device 801 and the vacuum pump 1101. The acid-base treatment device 1201 is arranged at the end of the main line.

[0061] Please also refer to Figure 2 The process of preparing an inverted structure PIN perovskite solar cell using a thin film deposition device includes the following steps:

[0062] 1) A transparent conductive substrate 1 and a hole transport layer (HTL) are prepared on a substrate. The material of the transparent conductive substrate can be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO) or other mixed materials. In this example, the material of the transparent conductive substrate is TCO; the material of the hole transport layer can be selected from copper oxide, nickel oxide, and at least one material selected from 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD).

[0063] This example uses the device of the present invention to deposit a layer of nickel oxide NiO as a hole transport layer, specifically including:

[0064] First, the sample enters the preheating chamber 101 through the second conveyor 401. The second ball valve 1002 and the third ball valve 1003 are closed, and the first chamber door 1303 is closed. The first ball valve 1001 is opened, and the preheating chamber 101 is evacuated and the substrate is preheated. The temperature of the preheating chamber 101 and the deposition chamber 102 is 70°C to 150°C. After the preheating is completed, the second chamber door 1301 is opened and closed after the sample enters the deposition chamber 102.

[0065] After the first baffle 601, the third baffle 603, the fifth baffle 605, the sixth baffle 606, and the seventh baffle 607 are closed, the plasma ionization device 701 and the acid-base treatment device 1201 are turned on;

[0066] Then, the vacuum pressure in the deposition chamber 102 is maintained at 3.0E-3 Pa to 3.0E-5 Pa by controlling the butterfly valve 901, the second baffle 602 is opened, and after waiting for a few seconds, the first sputtering power source is turned on to perform a PVD deposition process on the transparent conductive substrate (TCO) 1, with the thickness of the transparent conductive substrate 1 controlled to be 200 nm to 300 nm.

[0067] After the transparent conductive substrate 1 is deposited, wait for a few seconds, turn off the first sputtering power supply, close the second baffle 602; open the fourth baffle (target material baffle 604), turn on the second sputtering power supply, and start the PVD deposition process of the nickel oxide layer, using the nickel oxide layer as the hole transport layer (HTL) 2. After the deposition is completed, turn off the second sputtering power supply, close the fourth baffle 604, wait for a certain period of time, turn off the plasma ionization device 701, turn off the acid-base treatment system 1201, close the second ball valve 1002, open the third ball valve 1003 for vacuuming, wait until the vacuum degree of the deposition chamber 102 and the unloading chamber 103 is close, open the third chamber door 1302, and transfer the sample on which the transparent conductive substrate 1 and the hole transport layer (HTL) 2 are deposited to the unloading chamber 103 through the first conveying device 402 and the third conveying device 403. Close the third ball valve 1003, close the third chamber door 1302, open the fourth chamber door 1304, and cool the sample before being taken out.

[0068] 2) A perovskite light absorbing layer (PVSK) 3 is prepared on the hole transport layer (HTL) 2 by using at least one of a spin coating process, a coating process, and a screen printing process. The thickness of the perovskite light absorbing layer (PVSK) 3 is 500 nm.

[0069] 3) depositing an electron transport layer (ETL) 4-1 on the perovskite light absorbing layer (PVSK) 3. The material of the electron transport layer (ETL) 4-1 may be at least one of carbon 60 (C60), lithium fluoride, magnesium fluoride, and fullerene derivative (PCBM).

[0070] The present invention takes magnesium fluoride (MgF) as an example, and uses the compatible atomic layer deposition and physical vapor deposition equipment of the present invention to deposit magnesium fluoride (MgF) on the perovskite light absorption layer (PVSK) 3 to form an electron transport layer (ETL) 4-1.

[0071] First, open the first chamber door 1303, and send the sample into the preheating chamber 101 through the second conveyor 401. Close the second ball valve 1002 and the third ball valve 1003, open the first ball valve 1001, and evacuate and preheat the preheating chamber 101. The temperature of the preheating chamber 101 and the deposition chamber 102 is 70℃~150℃. After the preheating is completed, open the second chamber door 1301. After the sample enters the deposition chamber 102, close the second chamber door 1301, close the first ball valve 1001, open the second ball valve 1002, and confirm that the first baffle 601, the third baffle 603, and the fifth baffle 60 5. After the sixth baffle 606 and the seventh baffle 607 are closed, the plasma ionization device 701 and the acid-base treatment device 1201 are opened. Then, the vacuum pressure in the deposition chamber 102 is maintained at 3.0E-3 Pa to 3.0E-5 Pa by controlling the butterfly valve 901. The seventh baffle 607 is opened. After waiting for a few seconds, the third sputtering power supply is turned on to perform the PVD deposition process of MgF2, and the thickness of MgF2 is controlled to be 20 nm to 30 nm to form the electron transport layer 4-1. After the electron transport layer 4-1 is deposited, wait for a few seconds, turn off the third sputtering power supply, and close the seventh baffle 607.

[0072] 4) Next, a buffer layer 4-2 is prepared by depositing the buffer layer 4-2 on the electron transport layer 4-1 using the utility model's compatible atomic layer deposition and physical vapor deposition equipment. The material of the buffer layer 4-2 can be at least one of tin oxide, zinc oxide, titanium oxide, and aluminum oxide.

[0073] The present invention takes tin oxide (SnO2) as an example; first, the vacuum value in the deposition chamber 102 is adjusted by the butterfly valve 901, and after the vacuum degree reaches 100 Pa to 300 Pa and the pressure is stabilized, the first baffle 601, the third baffle 603, and the fifth baffle 605 are opened, and the valves on the pipeline of the precursor supply device are opened through the first chemical source control device, the second chemical source control device, and the second chemical source control device, and the chemical source is introduced into the deposition chamber to perform the ALD deposition SnO2 process. During the process, the sample is swung back and forth by the first conveying device 402 during the ALD deposition process to obtain a more uniform film layer, thereby improving the film layer quality. The thickness of SnO2 is 5nm to 30nm, and the deposition rate is controlled at / loop~ / between cycles; after the ALD process deposition is completed, the valve on the pipeline of the precursor supply device is opened through the first chemical source control device, the second chemical source control device, and the second chemical source control device to stop the chemical source supply and close the first baffle 601, the third baffle 603, and the fifth baffle 605.

[0074] 5) Next, a metal electrode 5 is prepared on the buffer layer 4 - 2 using a PVD process. The material of the metal electrode 5 can be at least one of gold, silver, aluminum, and copper.

[0075] The present invention selects silver (Ag) material as an example; the sample is adjusted to a suitable position by the first conveying device 402, and the vacuum pressure in the deposition chamber 102 is stabilized at 1.0E-4 Pa to 3.0E-5 Pa by controlling the butterfly valve 901, and then the sixth baffle 606 is opened. After waiting for a few seconds, the fourth sputtering power is turned on, and Ag with a thickness of 5nm to 30nm is deposited as an electrode layer through a PVD process. After the deposition of the electrode layer is completed, wait for a few seconds, turn off the fourth sputtering power, close the sixth baffle 606, wait for a certain period of time, turn off the plasma ionization device 701, and turn off the acid-base treatment device 1201; open the third chamber door 1302, and convey the sample to the unloading chamber 103 by the first conveying device 402, close the third chamber door 1302, and after the sample is cooled, open the fourth chamber door 1304 to vent and take it out, and finally make a complete perovskite solar cell (PSCs) device.

[0076] In all of the above process, whether it is ALD or PVD process, as long as the film layer is deposited, by-products will be generated. The by-product processing module in the utility model can achieve a better processing effect on the by-products, which can not only extend the maintenance cycle of the equipment, especially the protection of the pump group and the environment, for example, the plasma treatment device 701 can ionize the by-products in the form of gas that are difficult to process by conventional methods and then enter the acid-base treatment device 1201 for further inactivation treatment; and the dust filter device 801 can collect solid dust particles generated in the process, reduce the impact of dust particles on the pump group and extend the service life; the acid-base treatment device can effectively treat the waste gas that may be generated in the process, such as hydrogen chloride gas, ammonia, etc., and neutralize them in the acid-base treatment device.

[0077] It should be understood that the above embodiments are merely illustrative of the technical concepts and features of the present invention. Their purpose is to enable those familiar with the art to understand the contents of the present invention and implement them accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications based on the spirit of the present invention are intended to fall within the scope of protection of the present invention.

Claims

1. A thin film deposition device, characterized in that: include: A deposition chamber, configured to provide a sealed environment for thin film deposition, wherein the deposition chamber is integrated with a first heating mechanism and a thin film deposition excitation device, wherein the thin film deposition excitation device is integrated with the deposition chamber to convert the precursor in the deposition chamber into a deposition layer; a first conveying device, disposed in the deposition chamber and at least used to transfer samples between a plurality of workstations and to drive the samples to reciprocate at a selected workstation; a vacuum pumping mechanism connected to the deposition chamber and at least used to adjust the vacuum level in the deposition chamber; a precursor supply device connected to the deposition chamber and used to supply the precursor into the deposition chamber; A by-product processing module is connected to the deposition chamber and is at least used to collect and / or purify the by-products and remaining precursors generated in the deposition chamber.

2. The thin film deposition apparatus according to claim 1, wherein: The by-product processing module is also connected to the vacuum pumping mechanism, and the by-product processing module and the vacuum pumping mechanism are arranged on the same medium passage.

3. The thin film deposition apparatus according to claim 2, wherein: The by-product processing module includes a plasma ionization device, a dust filtering device and an acid-base treatment device. The plasma ionization device, the dust filtering device and the acid-base treatment device are connected in sequence. The plasma ionization device is directly connected to the deposition chamber. The vacuum mechanism is arranged between the dust filtering device and the acid-base treatment device, and is respectively connected to the dust filtering device and the acid-base treatment device.

4. The thin film deposition apparatus according to claim 3, wherein: A butterfly valve is also provided on the connecting pipeline between the dust filtering device and the vacuum pumping mechanism.

5. The thin film deposition apparatus according to claim 3, wherein: The plasma ionization device is connected to the deposition chamber via a second connecting pipe, and is connected to the dust filtering device, vacuum pumping mechanism, and acid-base treatment device in sequence via a fourth connecting pipe, wherein a second ball valve with two working states of open and closed is also provided on the second connecting pipe.

6. The thin film deposition device according to claim 5, characterized in that: Also includes: A preheating chamber, wherein a second heating mechanism is integrated in the preheating chamber, and the preheating chamber and the deposition chamber have two working states: interconnected and isolated from each other; a second conveying device, disposed in the preheating chamber and at least used to transfer the sample from the preheating chamber to the first conveying device in the deposition chamber; Furthermore, the preheating chamber is also connected to the vacuum pumping mechanism, and the vacuum pumping mechanism is also used to adjust the vacuum degree in the preheating chamber.

7. The thin film deposition apparatus according to claim 6, wherein: The preheating chamber is indirectly connected to the vacuuming mechanism via the plasma ionization device and the dust filtering device in sequence.

8. The thin film deposition apparatus according to claim 7, wherein: The plasma ionization device is connected to the preheating chamber via a first connecting pipeline. A first ball valve having two working states of open and closed is further provided on the first connecting pipeline.

9. The thin film deposition device according to claim 5, characterized in that: Also includes: A discharge chamber, wherein a third heating mechanism is integrated in the discharge chamber, and the discharge chamber and the deposition chamber have two working states: interconnected and isolated from each other; a third conveying device, disposed in the unloading chamber and at least used to transfer the sample from the unloading chamber to the first conveying device in the deposition chamber; Furthermore, the unloading chamber is also connected to the vacuum pumping mechanism, and the vacuum pumping mechanism is also used to adjust the vacuum degree in the unloading chamber.

10. The thin film deposition device according to claim 9, characterized in that: The unloading chamber is indirectly connected to the unloading chamber via the plasma ionization device and the dust filtering device in sequence.

11. The thin film deposition device according to claim 10, wherein: The plasma ionization device is connected to the discharge chamber via a third connecting pipeline, and a third ball valve with two working states of open and closed is further provided on the third connecting pipeline.

12. The thin film deposition apparatus according to claim 1, wherein: The thin film deposition excitation device includes an atomic layer deposition excitation device and a physical vapor deposition excitation device. The atomic layer deposition excitation device is used to convert the first precursor in the deposition chamber into an atomic layer deposition layer, and the physical vapor deposition excitation device is at least used to convert the second precursor in the deposition chamber into a physical vapor deposition layer.

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