Multispectral imaging device applied to chip detection

Abstract

An adjustable multispectral imaging device applied to chip detection is characterized by comprising a color camera, the color camera is connected with a large-depth-of-view telecentric lens, the large-depth-of-view telecentric lens is connected with a multispectral adjustable light source device, and the light source device comprises a coaxial light source used for emitting RBW three spectrums. A first RW double-spectrum annular light source is arranged below the coaxial light source, a second RW double-spectrum annular light source is arranged on the inclined side of the first RW double-spectrum annular light source, an R-spectrum annular light source is arranged on the inclined side of the second RW double-spectrum annular light source, and the technical means that multiple spectrums can be adjusted and can be combined freely to irradiate can be compatible with different types of products. In response to more complex detection scenes, different areas such as chips, bonding wires, silver paste and insulation paste can be distinguished from colors, the imaging effect is improved, and more possibilities are provided for algorithm development.

Description

Technical field

[0002] The utility model relates to the technical field of machine vision detection, in particular to optical imaging detection after semiconductor chip die bonding and bonding. [Background Technology]

[0004] At present, with the rapid development of the domestic semiconductor industry, the demand for semiconductor equipment is also increasing. There is no shortage of appearance inspection equipment for various process sections of chip production. The chip bonding and bonding process sections are two important links. During the chip bonding and bonding process, it is very easy to cause the chip to be dirty, crooked, damaged, overflowed with glue, and the gold wire and aluminum wire to collapse, break, and weld incorrectly. Since most of them use single-spectrum and single-angle light source illumination, they are not compatible with more product inspections and cannot adapt to more complex inspection scenarios. In addition, the imaging uniformity and contrast are poor, especially for the imaging of gold or aluminum wires after bonding. Since it is impossible to provide multi-angle illumination, the inspection target cannot be imaged uniformly and clearly, and the inspection requirements cannot be met. When using monochromatic spectrum inspection, there are differences in imaging of different products, and the contrast is also different. Imaging needs to maintain good contrast and adapt to products of different material types. Multi-spectral light source illumination imaging is required to adapt to more products. [Utility Model Content]

[0006] In order to overcome the above technical defects, the technical problem to be solved by the present invention is to provide a multispectral imaging device for chip detection. The present invention is implemented by the following technical solutions:

[0007] A multispectral imaging device for chip detection is characterized by comprising a color camera, wherein the color camera is connected to a lens, and the lens is connected to a light source device capable of emitting multispectral and adjustable light, and a chip mounting position for illumination by the light source device is provided below the light source device.

[0008] As described above, a multi-spectral imaging device for chip detection, the light source device includes a coaxial light source for emitting multiple spectra, a first mounting surface is provided around the outside of the line between the center point of the coaxial light source and the center point of the chip mounting position, the first mounting surface is provided with a first RW dual-spectrum ring light source for emitting multiple spectra to illuminate the chip mounting position, the first mounting surface is provided on the periphery of the first mounting surface with a second mounting surface facing the chip mounting position, the second mounting surface is provided with a second RW dual-spectrum ring light source for emitting multiple spectra to illuminate the chip mounting position, the second mounting surface is provided with a third mounting surface facing the chip mounting position, and the third mounting surface is provided with an R spectrum ring light source for emitting one spectrum to illuminate the chip mounting position.

[0009] As described above, in a multispectral imaging device for chip detection, the coaxial light source is provided with a red light-emitting unit, a blue light-emitting unit and a white light-emitting unit, the wavelength of the red light-emitting unit is 620-750nm, and the wavelength of the blue light-emitting unit is 450-495nm.

[0010] In the multi-spectral imaging device for chip detection as described above, the first RW dual-spectrum ring light source is provided with a red light-emitting unit and a white light-emitting unit, and the wavelength of the red light-emitting unit is 620-750 nm.

[0011] As described above, in a multispectral imaging device for chip detection, the second RW dual-spectrum ring light source has an incident angle of 35° to 45° and is provided with a red light-emitting unit and a white light-emitting unit, and the red spectrum wavelength is 620 to 750 nm.

[0012] As described above, in a multi-spectral imaging device for chip detection, the R spectrum annular light source has an incident angle of 15° to 25° and is provided with a red light-emitting unit, and the red spectrum wavelength is 620 to 750 nm.

[0013] In the multispectral imaging device for chip detection as described above, a reinforcement step is provided between the second mounting surface and the third mounting surface.

[0014] In the multispectral imaging device for chip detection as described above, the color camera, lens, and light source device are placed on the same horizontal axis.

[0015] In the multispectral imaging device for chip detection as described above, the distance from the lower surface of the lens to the product surface through the deflected light path is 118±2 mm.

[0016] In the multispectral imaging device for chip detection as described above, the distance between the lower surface of the light source device and the product surface is 10±2 mm.

[0017] Compared with the existing technology, the utility model has the following advantages:

[0018] 1. The multi-spectral adjustable and arbitrarily combined illumination technology is compatible with different types of products and can cope with more complex inspection scenarios. It can distinguish different areas such as chips, welding wires, silver paste, insulating glue, etc. by color, improve imaging effects, and provide more possibilities for algorithm development.

[0019] 2. The design of the turning optical path can save longitudinal space and lower the center of gravity for some specific scenarios, providing a more reliable way for high-speed movement of the machine and improving the detection efficiency of the machine.

[0020] 3. Multi-angle illumination can make imaging more uniform and make defects in chips, welding wires, frames, etc. more obvious.

Brief Description of the Drawings

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments.

[0023] Figure 1 This is a schematic diagram of a multi-spectral imaging device for chip detection according to the present invention. Figure 1 ;

[0024] Figure 2 A schematic top view of a multispectral imaging device for chip detection according to the present invention Figure 2 ;

[0025] Figure 3 This is a cross-sectional diagram of a multispectral imaging device for chip detection in the present invention. Figure 3 ;

[0026] Figure 4 This is a cross-sectional diagram of a multi-spectral imaging device for chip detection without a light source. Figure 4 ;

[0027] Figure 5 This is a schematic diagram of a light source device of a multi-spectral imaging device for chip detection according to the present invention. Figure 5 . [Specific implementation method]

[0029] In order to make the technical problems, technical solutions and beneficial effects solved by this application more clearly understood, this application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0030] See also Figures 1 to 5 A multispectral imaging device for chip detection includes a high-frame-rate and high-speed color camera 1, the color camera 1 is connected to a lens 2 for providing high-resolution, ultra-wide depth of field and ultra-low distortion images, the lens 2 is connected to a multispectral adjustable light source device 3, and a chip mounting position 10 for illumination by the light source device 3 is provided below the light source device 3. The light source device 3 has four optical paths, each optical path is provided with a different spectrum, which can be arranged and combined according to needs to illuminate simultaneously to cope with complex and changeable detection scenarios and be compatible with the imaging of more products.

[0031] Furthermore, as a preferred embodiment of the present invention but not a limitation, the light source device 3 includes a coaxial light source 31 arranged on the top of the light source device 3 for emitting multiple spectra and uniformly illuminating the core particles. The coaxial light source 31 is provided with a red light-emitting unit, a blue light-emitting unit, and a white light-emitting unit. The wavelength of the red light-emitting unit is 620 to 750 nm, and the wavelength of the blue light-emitting unit is 450 to 495 nm. Each light-emitting unit can emit light independently and independently support 256 levels of brightness adjustment to adapt to different products. The three light-emitting units can also support random two or more light-emitting units to emit light at the same time, and can perform light-emitting unit fitting to perform imaging for more complex chips.

[0032] Furthermore, as a preferred embodiment of the present invention but not a limitation, a first mounting surface 321 is provided around the outside of the line connecting the center point of the coaxial light source 31 and the center point of the chip mounting position 10. The first mounting surface 321 is provided with a first RW dual-spectrum ring light source 32 for emitting multiple spectra and vertically irradiating the chip and the welding wire for imaging fill light. The first RW dual-spectrum ring light source 32 is provided with a red light-emitting unit and a white light-emitting unit. The two spectra can individually support 256 levels of brightness adjustment. The wavelength of the red light-emitting unit is 620 to 750 nm. The two light-emitting units can support individual light emission or simultaneous fitting light emission to adapt to more changing scenes.

[0033] Furthermore, as a preferred embodiment of the present invention but not a limitation, a second mounting surface 331 facing the chip mounting position 10 is provided on the periphery of the first mounting surface 321, and the second mounting surface 331 is provided with a second RW dual-spectrum ring light source 33 for emitting multiple spectra to illuminate the chip mounting position 10 and adapting to imaging of welding wires of different colors. The second RW dual-spectrum ring light source 33 has an incident angle of 35° to 45° and has red and white colors that can individually support 256 levels of brightness adjustment. The wavelength of the red light-emitting unit is 620 to 750 nm. The two light-emitting units can support individual light emission or simultaneous fitting light emission to adapt to more changing scenes.

[0034] Furthermore, as a preferred embodiment of the present invention but not a limitation, a third mounting surface 341 facing the chip mounting position 10 is provided on the outer periphery of the second mounting surface 331, and an R spectrum ring light source 34 is provided on the third mounting surface 341 for emitting a spectrum to illuminate the chip mounting position 10 and evenly brighten the welding wires with a larger degree of curvature. The R spectrum ring light source 34 has an incident angle of 15° to 25° and has a red color and supports a 256-level brightness adjustment spectrum. The red spectrum wavelength is 620 to 750nm. The R spectrum ring light source 34 illuminates the welding wires at a low angle and does not interfere with the imaging of the chip.

[0035] Furthermore, as a preferred embodiment of this solution but not a limitation, a reinforcement step 333 for reinforcing the structure of the light source device 3 is provided between the second mounting surface 331 and the third mounting surface 341 .

[0036] Furthermore, as a preferred embodiment of the present invention but not a limitation, the color camera 1, lens 2 and light source device 3 are placed on the same horizontal axis, and imaging is achieved by turning the light path, thereby lowering the center of gravity of the optical system, achieving more reliable image acquisition under high-speed movement, and bringing higher detection efficiency.

[0037] Furthermore, as a preferred embodiment of this solution but not a limitation, the light source device 3 is provided with a side viewing window 35 for the lens 2 to take pictures.

[0038] Furthermore, as a preferred embodiment of this solution but not a limitation, the light source device 3 is connected to a fixing rod 5 for fixing the light source device 3 in the vertical direction, so that the light source device 3 will not move in the vertical direction under high-speed movement.

[0039] Furthermore, as a preferred embodiment of this solution but not limiting, the light source device 3 is connected to a fixing rod 6 and a fixing rod 7 for fixing the light source device 3 in the horizontal direction. In the case of high-speed movement, the light source device 3 will not move in the horizontal direction.

[0040] Furthermore, as a preferred embodiment of this solution but not a limitation, the distance from the lower surface of the lens 2 to the product surface through the deflected optical path is 118±2 mm.

[0041] Furthermore, as a preferred embodiment of this solution but not a limitation, the distance between the lower surface of the light source device 3 and the product surface is 10±2 mm.

[0042] The utility model discloses a multi-spectral imaging device for chip detection. The first part of the device is a high-precision and high-frame-rate color camera 1, which can quickly image defects and improve imaging efficiency. The second part is a custom-developed lens 2, which is directly connected to the camera. Its depth of field can reach 3mm, and within this range it is compatible with most solid crystal or bonded products with height differences. The third part is an adjustable multi-spectral and multi-angle light source device 3, which is located on the side of the lens, with the viewing window close to the lower end of the lens, and includes four light paths. The first light path has three individually adjustable light spectrums, the second has two, the third has two, and the fourth has one, supporting up to 65 combined spectrum imaging, and each Each spectrum brightness individually supports 256 levels of brightness adjustment. When inspecting chip bonding wires, the first blue spectrum with a wavelength of 450-495nm and the second red spectrum with a wavelength of 620-750nm can be used for irradiation. When inspecting chip die bonding, the first blue spectrum with a wavelength of 450-495nm and the second and third red spectrums with wavelengths of 620-750nm can be used for irradiation. Alternatively, the first white spectrum and the second and third red spectrums with wavelengths of 620-750nm can be used for irradiation. Different combinations of spectral imaging can be used to distinguish different areas such as chips, bonding wires, silver paste, and insulating glue, greatly improving the imaging effect and providing more possibilities for algorithm development.

[0043] The above are implementation methods provided in conjunction with specific content, and the specific implementation of this application is not limited to these descriptions. Any method structure that is similar to the method structure of this application, or any technical deduction or replacement based on the concept of this application, should be considered as the scope of protection of this application.

Claims

1. A multispectral imaging device for chip detection, characterized in that: The invention comprises a color camera (1), wherein the color camera (1) is connected to a lens (2), and the lens (2) is connected to a light source device (3) capable of emitting multiple spectra and being adjustable, and a chip mounting position (10) for illumination by the light source device (3) is provided below the light source device (3).

2. The multispectral imaging device for chip detection according to claim 1, characterized in that The light source device (3) includes a coaxial light source (31) for emitting multiple spectra, a first mounting surface (321) is provided on the outer periphery of the line between the center point of the coaxial light source (31) and the center point of the chip mounting position (10), a first RW dual-spectrum ring light source (32) for emitting multiple spectra to illuminate the chip mounting position (10) is provided on the first mounting surface (321), a second mounting surface (331) facing the chip mounting position (10) is provided on the outer periphery of the first mounting surface (321), a second RW dual-spectrum ring light source (33) for emitting multiple spectra to illuminate the chip mounting position (10) is provided on the second mounting surface (331), a third mounting surface (341) facing the chip mounting position (10) is provided on the outer periphery of the second mounting surface (331), and an R spectrum ring light source (34) for emitting one spectrum to illuminate the chip mounting position (10) is provided on the third mounting surface (341).

3. The multispectral imaging device for chip detection according to claim 2, characterized in that : The coaxial light source (31) is provided with a red light emitting unit, a blue light emitting unit and a white light emitting unit, the wavelength of the red light emitting unit is 620-750 nm, and the wavelength of the blue light emitting unit is 450-495 nm.

4. The multispectral imaging device for chip detection according to claim 3, characterized in that The first RW dual-spectrum annular light source (32) is provided with a red light emitting unit and a white light emitting unit, and the wavelength of the red light emitting unit is 620-750 nm.

5. The multispectral imaging device for chip detection according to claim 4, characterized in that The second RW dual-spectrum annular light source (33) has an incident angle of 35° to 45° and is provided with a red light-emitting unit and a white light-emitting unit, and the red spectrum wavelength is 620 to 750 nm.

6. The multispectral imaging device for chip detection according to claim 5, characterized in that The incident angle of the R spectrum ring light source (34) is 15° to 25° and is provided with a red light emitting unit, and the red spectrum wavelength is 620 to 750 nm.

7. A multispectral imaging device for chip detection according to claim 6, characterized in that A reinforcement step (333) is provided between the second mounting surface (331) and the third mounting surface (341).

8. The multispectral imaging device for chip detection according to claim 1, characterized in that The color camera (1), lens (2) and light source device (3) are placed on the same horizontal axis.

9. The multispectral imaging device for chip detection according to claim 1, characterized in that : The distance from the lower surface of the lens (2) to the product surface through the turning light path is 118±2mm.

10. The multispectral imaging device for chip detection according to claim 1, characterized in that : The distance between the lower surface of the light source device (3) and the product surface is 10±2mm.

Images