Hidden crack detection equipment

Abstract

The utility model discloses subfissure detection equipment, which comprises a detection unit, a signal processing unit and a signal processing unit, the detection unit comprises a first detection probe, the first detection probe is arranged above a silicon wafer to be detected, and the silicon wafer to be detected comprises a metal seed layer; the excitation signal generator is connected with the detection unit, and the excitation signal generator is configured to provide an alternating current excitation signal for the detection unit under the condition that the silicon wafer to be detected passes through the first detection probe; and the detection unit generates an induced magnetic field according to the AC excitation signal and performs subfissure detection on the to-be-detected silicon wafer by using the induced magnetic field. The subfissure detection equipment performs subfissure detection on the silicon wafer to be detected by using the induced magnetic field, so that the problem that subfissure defect detection cannot be performed on the silicon wafer containing a metal seed layer in PL detection in related technologies is solved, and the adverse risk of the silicon wafer and the subfissure detection difficulty are further reduced.

Description

Technical Field

[0001] The present application relates to the technical field of fault detection, and in particular to a hidden crack detection device. Background Art

[0002] During the copper interconnect cell manufacturing process, a 300-400 nanometer copper seed layer is deposited on silicon wafers. However, conventional photoluminescence (PL) testing cannot penetrate the copper seed layer, making it incapable of detecting hidden crack defects on silicon wafers. After the copper seed layer is deposited on the silicon wafer, five further steps (coating, developing, printing, hemming, and electroplating) are required. These five subsequent steps carry a significant risk of hidden cracks due to structural issues in the equipment. Therefore, failure to promptly detect these issues during the manufacturing process can lead to defective wafer batches. Detecting these issues in subsequent steps necessitates troubleshooting across all subsequent steps, increasing both time and difficulty. Utility Model Content

[0003] The present invention aims to at least partially address one of the technical problems in the related art. To this end, one objective of the present invention is to provide a microcrack detection device that utilizes an induced magnetic field generated by a detection unit to detect microcracks in a silicon wafer to be inspected. This allows for timely detection of microcracks in the silicon wafer, thereby resolving the problem in the related art where PL testing cannot detect microcrack defects in silicon wafers containing a metal seed layer. This, in turn, reduces the risk of defective silicon wafers and the difficulty of detecting microcracks.

[0004] To achieve the above-mentioned purpose, according to an embodiment of the present utility model, a hidden crack detection device is proposed, including: a detection unit, the detection unit including a first detection probe, the first detection probe is arranged above the silicon wafer to be detected, wherein the silicon wafer to be detected contains a metal seed layer; an excitation signal generator, the excitation signal generator is connected to the detection unit, and the excitation signal generator is configured to provide an AC excitation signal to the detection unit when the silicon wafer to be detected passes through the first detection probe, so that the detection unit generates an induced magnetic field according to the AC excitation signal and uses the induced magnetic field to perform hidden crack detection on the silicon wafer to be detected.

[0005] According to the embodiment of the utility model, the hidden crack detection equipment includes a detection unit and an excitation signal generator, wherein the detection unit includes a first detection probe, the first detection probe is arranged above the silicon wafer to be detected, and the silicon wafer to be detected contains a metal seed layer. The excitation signal generator is connected to the detection unit, and the excitation signal generator is configured to provide an AC excitation signal to the detection unit when the silicon wafer to be detected passes through the first detection probe, so that the detection unit generates an induced magnetic field according to the AC excitation signal and uses the induced magnetic field to detect hidden cracks on the silicon wafer to be detected. When hidden cracks exist in the silicon wafer to be detected, the conductivity of the silicon wafer to be detected will change, thereby causing the induced magnetic field to change. Therefore, it can be determined whether there are hidden cracks in the silicon wafer to be detected based on the induced magnetic field, and hidden crack detection can be performed on the silicon wafer containing the metal seed layer, thereby solving the problem in the related art that PL detection cannot detect hidden crack defects in silicon wafers containing metal seed layers, thereby reducing the defective risk of silicon wafers and the difficulty of hidden crack detection.

[0006] According to one embodiment of the present invention, the first detection probe is connected to the excitation signal generator to generate an induced magnetic field according to the AC excitation signal, and changes the induced magnetic field when there are hidden cracks in the silicon wafer to be detected, so that the voltage of the first detection probe changes. The detection unit also includes: a voltage detection device, the voltage detection device is connected to the first detection probe, and the voltage detection device is configured to detect the voltage of the first detection probe to obtain a first voltage detection value; a data processing device, the data processing device is connected to the voltage detection device, and the data processing device is configured to determine the size and position of the hidden cracks on the silicon wafer to be detected according to the first voltage detection value.

[0007] According to one embodiment of the present invention, the detection unit also includes: a second detection probe, which is arranged above the silicon wafer to be detected and behind the first detection probe, and the second detection probe is configured to perform hidden crack detection on a first area of the silicon wafer to be detected, wherein the first area is an end of the silicon wafer to be detected that passes through the first detection probe; a third detection probe, which is arranged above the silicon wafer to be detected and behind the second detection probe, and the third detection probe is configured to perform hidden crack detection on a second area of the silicon wafer to be detected, wherein the second area is an end of the silicon wafer to be detected that passes through the first detection probe first.

[0008] According to an embodiment of the present invention, the distance between the second detection probe and the third detection probe is the length of the silicon wafer to be detected in the moving direction.

[0009] According to one embodiment of the present invention, when the silicon wafer to be inspected passes through the first inspection probe, the second inspection probe and the third inspection probe respectively start to reciprocate in a preset direction, wherein the preset direction is a direction perpendicular to the moving direction of the silicon wafer to be inspected.

[0010] According to one embodiment of the present invention, the excitation signal generator is also connected to the second detection probe and the third detection probe respectively. The excitation signal generator is also configured to provide AC excitation signals to the second detection probe and the third detection probe respectively when the silicon wafer to be detected passes through the first detection probe, so that the second detection probe and the third detection probe can perform hidden crack detection on the first area and the second area respectively.

[0011] According to one embodiment of the present utility model, the voltage detection device is also connected to the second detection probe and the third detection probe respectively, and the voltage detection device is also configured to detect the voltage of the second detection probe and the third detection probe respectively to obtain the second voltage detection value and the third voltage detection value, and provide the second voltage detection value and the third voltage detection value to the data processing device, so that the data processing device determines the size and position of the hidden crack based on the first voltage detection value, the second voltage detection value and the third voltage detection value.

[0012] According to an embodiment of the present invention, the hidden crack detection device further includes: a conveying device, which is used to place the silicon wafer to be inspected so as to convey the silicon wafer to be inspected to the first inspection probe.

[0013] According to one embodiment of the present invention, the position of the first detection probe remains unchanged.

[0014] According to an embodiment of the present invention, the distance between the first detection probe and the silicon wafer to be detected is between 0.5 mm and 2 mm.

[0015] Additional aspects and advantages of the present invention will be given in part in the following description and in part will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic structural diagram of a hidden crack detection device according to an embodiment of the present utility model;

[0017] Figure 2 This is a schematic diagram of the principle of eddy current detection according to one embodiment of the present utility model;

[0018] Figure 3 is a side view of a hidden crack detection device according to an embodiment of the present utility model;

[0019] Figure 4 is a structural schematic diagram of a hidden crack detection device according to another embodiment of the present utility model;

[0020] Figure 5 is a top view of a hidden crack detection device according to an embodiment of the present utility model;

[0021] Figure 6It is a structural schematic diagram of a hidden crack detection device according to another embodiment of the present utility model. DETAILED DESCRIPTION

[0022] The following describes in detail embodiments of the present invention, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present invention, and should not be construed as limiting the present invention.

[0023] It should be noted that this application is based on the inventor's understanding and research of the following issues:

[0024] In related technologies, PL testing involves scanning the surface of a silicon wafer with light. PL testing typically uses a laser of a specific wavelength as an excitation light source, providing photons of a certain energy. Electrons in the silicon wafer's ground state absorb these photons and enter an excited state. These excited electrons are metastable and quickly return to the ground state, emitting infrared fluorescence. This fluorescence is then detected by a highly sensitive, high-resolution camera, and the images captured by the camera are analyzed using software.

[0025] The intensity of the luminescence is proportional to the concentration of non-equilibrium minority carriers at that location. The lower minority carrier concentration at defects weakens the fluorescence effect, which appears as dark dots, lines, or areas on the image. However, PL light sources cannot penetrate silicon wafers with a metallic copper seed layer. Therefore, conventional PL testing cannot detect defects in silicon wafers containing a metallic copper seed layer, resulting in an increased wafer rejection rate. Furthermore, if hidden cracks are discovered in subsequent processes, all subsequent processes must be investigated, increasing the time and difficulty of troubleshooting.

[0026] Based on this, an embodiment of the utility model provides a hidden crack detection device, which uses the induced magnetic field generated by the detection unit to perform hidden crack detection on the silicon wafer to be detected, thereby realizing timely hidden crack detection of the silicon wafer, thereby solving the problem in the related technology that PL detection cannot detect hidden crack defects in silicon wafers containing metal seed layers, and thus reducing the defective risk of silicon wafers and the difficulty of hidden crack detection.

[0027] The following describes a hidden crack detection device according to an embodiment of the present invention with reference to the accompanying drawings.

[0028] Figure 1 This is a schematic diagram of the structure of a hidden crack detection device according to an embodiment of the present invention. Figure 1 As shown, the micro-crack detection device 100 includes: a detection unit 10 and an excitation signal generator 20.

[0029] Among them, the detection unit 10 includes a first detection probe 11, which is arranged above the silicon wafer 200 to be detected, wherein the silicon wafer 200 to be detected contains a metal seed layer (not shown); the excitation signal generator 20 is connected to the detection unit 10, and the excitation signal generator 20 is configured to provide an AC excitation signal to the detection unit 10 when the silicon wafer 200 to be detected passes through the first detection probe 11, so that the detection unit 10 generates an induced magnetic field according to the AC excitation signal and uses the induced magnetic field to perform hidden crack detection on the silicon wafer 200 to be detected.

[0030] Specifically, the principle of using the induced magnetic field to detect hidden cracks in the silicon wafer 200 is as follows: Figure 2 As shown, when an AC excitation signal (e.g. Figure 2 An alternating magnetic field H is generated around the coil due to the alternating current i in the coil. Since the silicon wafer 200 to be tested contains a metal seed layer, and due to electromagnetic induction, a mutual induction current, namely eddy current ie, is simultaneously generated in the silicon wafer 200 to be tested below the coil. As the alternating magnetic field H changes periodically, the generated induced magnetic field (also known as the mutual induction magnetic field), namely the eddy current magnetic field He, also changes periodically. When the coil is located at the defective position of the silicon wafer 200 to be tested, the conductivity of the silicon wafer 200 to be tested changes, causing the eddy current ie to be affected, and the induced magnetic field He changes accordingly. This change destroys the original balance, and the coil will sense this change, causing the alternating current i to change. Based on the electrical signal fed back by the alternating current i, it can be determined whether the silicon wafer 200 to be tested has defects. Therefore, the induced magnetic field can be used to detect hidden cracks in the silicon wafer 200 to be tested. When the silicon wafer 200 to be inspected passes through the first inspection probe 11, the excitation signal generator 20 provides an AC excitation signal to the inspection unit 10, so that the inspection unit 10 generates an induced magnetic field according to the AC excitation signal, and then determines whether there are hidden cracks in the silicon wafer 200 to be inspected based on the changes in the induced magnetic field.

[0031] In an optional embodiment, the first detection probe 11 may be an eddy current sensor, and the excitation signal generator 20 may be an oscillator. The eddy current sensor is provided with a coil, so when the excitation signal generator 20 provides an AC excitation signal to the eddy current sensor, the eddy current sensor can generate an induced magnetic field.

[0032] Furthermore, in some embodiments, the distance between the first detection probe 11 and the silicon wafer 200 to be detected is between 0.5 mm and 2 mm.

[0033] That is to say, if Figure 3 As shown, the vertical distance d between the first detection probe 11 and the silicon wafer 200 to be detected is between 0.5 mm and 2 mm, and the height of the first detection probe 11 can be adjusted according to actual needs.

[0034] In the above embodiment, when the silicon wafer to be inspected passes through the first detection probe, the excitation signal generator provides an AC excitation signal to the detection unit, so that the detection unit generates an induced magnetic field. The detection unit determines whether there are hidden cracks in the silicon wafer to be inspected based on the changes in the induced magnetic field. In this way, after the silicon wafer to be inspected is plated with a metal seed layer, the hidden crack detection equipment of this embodiment can be used to perform hidden crack detection in a timely manner, thereby reducing the risk of silicon wafer defects and reducing the difficulty of troubleshooting.

[0035] In some embodiments, as Figure 2 As shown, the first detection probe 11 is connected to the excitation signal generator 20 to generate an induced magnetic field according to the AC excitation signal, and change the induced magnetic field when there are hidden cracks in the silicon wafer 200 to be detected, so that the voltage of the first detection probe 11 changes. The detection unit 10 also includes: a voltage detection device 12 and a data processing device 13, wherein the voltage detection device 12 is connected to the first detection probe 11, and the voltage detection device 12 is configured to detect the voltage of the first detection probe 11 to obtain a first voltage detection value; the data processing device 13 is connected to the voltage detection device 12, and the data processing device 13 is configured to determine the size and position of the hidden cracks on the silicon wafer 200 to be detected according to the first voltage detection value.

[0036] Specifically, a coil is provided in the first detection probe 11, and the excitation signal generator 20 is connected to the first detection probe 11 to provide an AC excitation signal to the first detection probe 11. The first detection probe 11 generates an induced magnetic field. When there is a hidden crack in the silicon wafer 200 to be detected, the conductivity changes, and the induced magnetic field of the first detection probe 11 changes, causing the impedance of the first detection probe 11 to change, thereby causing the voltage of the first detection probe 11 to vibrate. The voltage detection device 12 detects the voltage at both ends of the first detection probe 11 to obtain a first voltage detection value, and provides the first voltage detection value to the data processing device 13. The data processing device 13 calculates the size and position of the hidden crack on the silicon wafer 200 to be detected based on the first voltage detection value.

[0037] In an optional embodiment, the hidden crack detection equipment 100 may also not be equipped with the data processing device 13, and the voltage detection device 12 is suitable for connecting to a host computer (not shown) to directly send the first voltage detection value to the host computer. The host computer calculates the hidden crack size and hidden crack position on the silicon wafer 200 to be detected based on the first voltage detection value, and displays the hidden crack size and hidden crack position on the screen.

[0038] In some embodiments, as Figure 4As shown, the detection unit 10 also includes: a second detection probe 14 and a third detection probe 15, wherein the second detection probe 14 is arranged above the silicon wafer 200 to be detected and behind the first detection probe 11, and the second detection probe 14 is configured to perform hidden crack detection on the first area 201 of the silicon wafer 200 to be detected, wherein the first area 201 is an end of the silicon wafer 200 to be detected that passes through the first detection probe 11; the third detection probe 15 is arranged above the silicon wafer 200 to be detected and behind the second detection probe 14, and the third detection probe 15 is configured to perform hidden crack detection on the second area 202 of the silicon wafer 200 to be detected, wherein the second area 202 is an end of the silicon wafer 200 to be detected that passes through the first detection probe 11 first.

[0039] Specifically, since the movement speed of the silicon wafer 200 to be inspected is relatively fast, in order to avoid mutual interference between the induced magnetic fields of two adjacent silicon wafers 200 to be inspected, the first detection probe 11 will not generate an induced magnetic field when passing through both ends of each silicon wafer 200 to be inspected. Therefore, there are detection blind areas with a width of approximately 8 mm at both ends of each silicon wafer 200 to be inspected, namely the first area 201 and the second area 202, which leads to inaccurate detection results of hidden cracks in the silicon wafer. In order to solve the problem of detection blind areas, a second detection probe 14 and a third detection probe 15 are added. The second detection probe 14 is arranged behind the first detection probe 11 to perform hidden crack detection on the first area 201, and the third detection probe 15 is arranged behind the second detection probe 14 to perform hidden crack detection on the second area 202. The heights of the first detection probe 11, the second detection probe 14, and the third detection probe 15 can be the same.

[0040] In the above embodiment, by adding the second and third detection probes to perform subtle crack detection on the first and second areas of the silicon wafer to be inspected, the detection blind area of the silicon wafer to be inspected is eliminated, thereby increasing the accuracy of subtle crack detection.

[0041] In some embodiments, as Figure 5 As shown, the distance between the second detection probe 14 and the third detection probe 15 is the length of the silicon wafer 200 to be detected in the moving direction.

[0042] by Figure 5 Taking the example shown, the moving direction of the silicon wafer 200 to be inspected is direction A, and the length of the silicon wafer 200 to be inspected in direction A is L, so the distance between the second inspection probe 14 and the third inspection probe 15 is L, which can ensure that the second inspection probe 14 and the third inspection probe 15 can perform hidden crack detection on the first area 201 and the second area 202 respectively.

[0043] In some embodiments, as Figure 5As shown, when the silicon wafer 200 to be inspected passes through the first inspection probe 11 , the second inspection probe 14 and the third inspection probe 15 respectively start to reciprocate in a preset direction, wherein the preset direction is a direction perpendicular to the moving direction of the silicon wafer 200 to be inspected.

[0044] Specifically, Figure 5 As shown in the example, the moving direction of the silicon wafer 200 to be inspected is direction A. When the silicon wafer 200 to be inspected passes through the first inspection probe 11, the second inspection probe 14 and the third inspection probe 15 start to reciprocate in direction B to eliminate the inspection blind area of the silicon wafer 200 to be inspected.

[0045] In an optional embodiment, as Figure 5 As shown, the detection unit 10 also includes a first shaft 16 and a second shaft 17. The first shaft 16 and the second shaft 17 are respectively arranged parallel to the silicon wafer 200 to be detected. The first shaft 16 is arranged above one end of the first detection probe 11 after the silicon wafer 200 to be detected passes through. The second detection probe 14 is installed on the first shaft 16. The second shaft 17 is arranged above one end of the first detection probe 11 after the silicon wafer 200 to be detected passes through. The third detection probe 15 is installed on the second shaft 17. The second detection probe 14 reciprocates along the first shaft 16, and the third detection probe 15 reciprocates along the second shaft 17.

[0046] In some embodiments, as Figure 4 As shown, the excitation signal generator 20 is also connected to the second detection probe 14 and the third detection probe 15 respectively. The excitation signal generator 20 is also configured to provide AC excitation signals to the second detection probe 14 and the third detection probe 15 respectively when the silicon wafer 200 to be detected passes through the first detection probe 11, so that the second detection probe 14 and the third detection probe 15 can perform hidden crack detection on the first area 201 and the second area 202 respectively.

[0047] It can be understood that when the silicon wafer 200 to be inspected passes through the first detection probe 11, the excitation signal generator 20 provides AC excitation signals to the first detection probe 11, the second detection probe 14, and the third detection probe 15 at the same time, so that the first detection probe 11, the second detection probe 14 and the third detection probe 15 can simultaneously generate an induced magnetic field to perform hidden crack detection on the silicon wafer 200 to be inspected. If the AC excitation signal is provided to the second detection probe 14 and the third detection probe 15 with a delay, the silicon wafer 200 to be inspected may move at a faster speed, resulting in a detection blind spot on the silicon wafer 200 to be inspected, thereby causing inaccurate detection results.

[0048] In some embodiments, as Figure 4As shown, the voltage detection device 12 is also connected to the second detection probe 14 and the third detection probe 15 respectively. The voltage detection device 12 is also configured to detect the voltages of the second detection probe 14 and the third detection probe 15 respectively to obtain a second voltage detection value and a third voltage detection value, and provide the second voltage detection value and the third voltage detection value to the data processing device 13, so that the data processing device 13 determines the size and position of the hidden crack according to the first voltage detection value, the second voltage detection value and the third voltage detection value.

[0049] Similarly, when the second detection probe 14 and the third detection probe 15 detect hidden cracks in the silicon wafer 200 to be detected, the voltages of the second detection probe 14 and the third detection probe 15 will also change. Therefore, the voltages of the second detection probe 14 and the third detection probe 15 can be detected respectively by the voltage detection device 12 to obtain second voltage detection values and third voltage detection values, and then the second voltage detection values and the third voltage detection values are sent to the data processing device 13. The data processing device 13 performs hidden crack detection on all areas on the silicon wafer 200 to be detected based on the first voltage detection value, the second voltage detection value and the third voltage detection value, thereby obtaining accurate hidden crack detection results.

[0050] It should be noted that if the voltage detection device 12 is suitable for connecting to a host computer, the voltage detection device 12 can also send the second voltage detection value and the third voltage detection value to the host computer, so that the host computer can determine the size and position of the hidden crack based on the first voltage detection value, the second voltage detection value and the third voltage detection value.

[0051] In some embodiments, as Figure 6 As shown, the micro-crack detection device 100 further includes: a conveying device 30 , which is used to place the silicon wafer 200 to be inspected, so as to convey the silicon wafer 200 to be inspected to the first inspection probe 11 .

[0052] That is to say, the silicon wafer 200 to be inspected is placed on the conveying device 30, and the conveying device 30 transfers the silicon wafer 200 to be inspected to the first inspection probe 11, the second inspection probe 14 and the third inspection probe 15 in sequence, so that the first inspection probe 11, the second inspection probe 14 and the third inspection probe 15 can respectively perform hidden crack detection on the silicon wafer 200 to be inspected.

[0053] In some embodiments, the position of the first detection probe 11 remains unchanged.

[0054] That is, the position of the first detection probe 11 remains unchanged, and the silicon wafer 200 to be detected is moved by the conveying device 30 so that the first detection probe 11 detects different positions of the silicon wafer 200 to be detected.

[0055] In summary, according to an embodiment of the present invention, a hidden crack detection device includes a detection unit and an excitation signal generator, wherein the detection unit includes a first detection probe, the first detection probe is arranged above a silicon wafer to be detected, and the silicon wafer to be detected contains a metal seed layer. The excitation signal generator is connected to the detection unit, and the excitation signal generator is configured to provide an AC excitation signal to the detection unit when the silicon wafer to be detected passes through the first detection probe, so that the detection unit generates an induced magnetic field according to the AC excitation signal and uses the induced magnetic field to detect hidden cracks on the silicon wafer to be detected. When hidden cracks exist in the silicon wafer to be detected, the conductivity of the silicon wafer to be detected will change, thereby causing the induced magnetic field to change. Therefore, based on the induced magnetic field, it can be determined whether the silicon wafer to be detected has hidden cracks, and hidden crack detection can be achieved for silicon wafers containing a metal seed layer, thereby solving the problem in the related art that PL detection cannot detect hidden crack defects in silicon wafers containing a metal seed layer, thereby reducing the defective risk of silicon wafers and the difficulty of hidden crack detection. By adding a second detection probe and a third detection probe to detect hidden cracks in the first and second areas of the silicon wafer to be detected, the detection blind spots of the silicon wafer to be detected are eliminated, thereby increasing the accuracy of hidden crack detection.

[0056] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0057] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation to the present invention.

[0058] In addition, the terms "first" and "second" used in the embodiments of the present invention are for descriptive purposes only and should not be understood as indicating or implying relative importance, or implicitly indicating the number of technical features indicated in the embodiments. Therefore, the features defined in the embodiments of the present invention with terms such as "first" and "second" can explicitly or implicitly indicate that the embodiment includes at least one of such features. In the description of the present invention, the word "plurality" means at least two or two or more, such as two, three, four, etc., unless otherwise clearly and specifically defined in the embodiments.

[0059] In this utility model, unless otherwise clearly specified or limited in the embodiments, the terms "installed", "connected", "connected", and "fixed" appearing in the embodiments should be understood in a broad sense. For example, the connection can be a fixed connection, a detachable connection, or an integral connection. It can also be a mechanical connection, an electrical connection, etc.; of course, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication between two elements, or the interaction between two elements. For those skilled in the art, the specific meanings of the above terms in this utility model can be understood based on the specific implementation.

[0060] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0061] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are illustrative and cannot be understood as limitations on the present invention. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A hidden crack detection device, characterized in that: include: A detection unit, the detection unit comprising a first detection probe, the first detection probe being disposed above a silicon wafer to be detected, wherein the silicon wafer to be detected contains a metal seed layer; An excitation signal generator is connected to the detection unit and is configured to provide an AC excitation signal to the detection unit when the silicon wafer to be detected passes through the first detection probe, so that the detection unit generates an induced magnetic field according to the AC excitation signal and uses the induced magnetic field to perform hidden crack detection on the silicon wafer to be detected.

2. The hidden crack detection device according to claim 1, characterized in that: The first detection probe is connected to the excitation signal generator to generate the induced magnetic field according to the AC excitation signal, and changes the induced magnetic field when there is a hidden crack in the silicon wafer to be detected, so that the voltage of the first detection probe changes. The detection unit also includes: a voltage detection device, the voltage detection device being connected to the first detection probe, the voltage detection device being configured to detect the voltage of the first detection probe to obtain a first voltage detection value; A data processing device is connected to the voltage detection device, and is configured to determine the size and position of the hidden crack on the silicon wafer to be detected according to the first voltage detection value.

3. The hidden crack detection device according to claim 2, characterized in that: The detection unit also includes: a second detection probe, the second detection probe being arranged above the silicon wafer to be inspected and behind the first detection probe, the second detection probe being configured to perform hidden crack detection on a first area of the silicon wafer to be inspected, wherein the first area is an end of the silicon wafer to be inspected that passes through the first detection probe; A third detection probe is arranged above the silicon wafer to be inspected and behind the second detection probe. The third detection probe is configured to perform hidden crack detection on a second area of the silicon wafer to be inspected, wherein the second area is an end of the silicon wafer to be inspected that first passes through the first detection probe.

4. The hidden crack detection device according to claim 3, characterized in that: The distance between the second detection probe and the third detection probe is the length of the silicon wafer to be detected in the moving direction.

5. The hidden crack detection device according to claim 3, characterized in that: When the silicon wafer to be inspected passes through the first inspection probe, the second inspection probe and the third inspection probe respectively start to reciprocate in a preset direction, wherein the preset direction is a direction perpendicular to the moving direction of the silicon wafer to be inspected.

6. The hidden crack detection device according to any one of claims 3 to 5, characterized in that: The excitation signal generator is also connected to the second detection probe and the third detection probe respectively. The excitation signal generator is also configured to provide the AC excitation signal to the second detection probe and the third detection probe respectively when the silicon wafer to be inspected passes through the first detection probe, so that the second detection probe and the third detection probe can perform hidden crack detection on the first area and the second area respectively.

7. The hidden crack detection device according to any one of claims 3 to 5, characterized in that: The voltage detection device is also connected to the second detection probe and the third detection probe respectively, and the voltage detection device is also configured to detect the voltage of the second detection probe and the third detection probe respectively to obtain a second voltage detection value and a third voltage detection value, and provide the second voltage detection value and the third voltage detection value to the data processing device so that the data processing device can determine the size and position of the hidden crack based on the first voltage detection value, the second voltage detection value and the third voltage detection value.

8. The hidden crack detection device according to claim 1, characterized in that: Also includes: A conveying device is used to place the silicon wafer to be inspected, so as to convey the silicon wafer to be inspected to the first inspection probe.

9. The hidden crack detection device according to claim 1, characterized in that: The position of the first detection probe remains unchanged.

10. The hidden crack detection device according to claim 1, characterized in that: The distance between the first detection probe and the silicon wafer to be detected is between 0.5 mm and 2 mm.

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