Evaporation device

Abstract

An evaporation apparatus includes: a first deposition source; a second deposition source in the first direction together with the first deposition source; a body member spaced apart from the first deposition source and the second deposition source in a second direction crossing the first direction, and including a first portion and a second portion in the second direction; a nozzle body member on the body member; a first pipe connected to a side surface of the first deposition source facing the main body member and the nozzle main body member and a lower end of the first portion; a second pipe connected to a side surface of the second deposition source facing the main body member and the nozzle main body member and a lower end of the second portion; a first nozzle protruding upward from the nozzle body member; and a second nozzle protruding upward from the nozzle body member.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0119459 filed in the Korean Intellectual Property Office on September 8, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The embodiments described herein relate to an evaporation device. Background Art

[0003] Organic light-emitting diode (OLED) displays, with their excellent brightness and viewing angle characteristics, have attracted attention as next-generation flat panel display devices. OLED displays can be made thin and lightweight because they do not require a separate light source. They also offer advantages such as low power consumption, high brightness, and a fast response speed.

[0004] An organic light-emitting diode display may include light-emitting elements, each of which may include an anode, an emissive layer, and a cathode. The emissive layer may be disposed between the anode and the cathode. The emissive layer receives holes from the anode and electrons from the cathode. The holes and electrons injected into the emissive layer may combine to form excitons, and the light-emitting element may emit light as the excitons transition to a ground state.

[0005] An evaporation device is used to form an emissive layer on a substrate. Generally, the emissive layer is formed by mixing a host and a dopant. The evaporation device may include deposition sources, each filled with a host and a dopant. Each deposition source may include a crucible filled with a deposition material (e.g., a host or a dopant) and a nozzle, through which the deposition material is dispensed.

[0006] A host and a dopant are dispensed from a deposition source and deposited on a substrate. An emissive layer is formed by mixing the host and dopant in a selectable ratio. The mixing ratio between the host and the dopant must be constant across the entire substrate so that the emissive layer formed on the substrate has the same properties. However, since the nozzles of the deposition source are spaced apart from each other, the mixing ratio between the host and the dopant may not be constant depending on the distribution of the deposition material dispensed from the deposition source.

[0007] It should be understood that the background section of this technology section is intended, in part, to provide a useful background for understanding the technology. However, the background section of this technology section may also include ideas, concepts, or insights that were not known or understood by one skilled in the relevant art before the corresponding effective filing date of the subject matter disclosed herein. Utility Model Content

[0008] Each embodiment provides an evaporation apparatus for providing deposition materials on a substrate such that a mixing ratio between the deposition materials is constant.

[0009] According to one embodiment, an evaporation device may include: a first deposition source; a second deposition source, arranged in a first direction together with the first deposition source; a main body part, spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, and including a first part and a second part arranged in the second direction; a nozzle main body part, arranged on the main body part; a first tube, connected to a side surface of the first deposition source facing the main body part and the nozzle main body part and a lower end of the first part; a second tube, connected to a side surface of the second deposition source facing the main body part and the nozzle main body part and a lower end of the second part; a first nozzle, protruding upward from the nozzle main body part; and a second nozzle, protruding upward from the nozzle main body part.

[0010] The first nozzle and the second nozzle may be disposed in the first direction.

[0011] The evaporation device may include: a first tube channel defined in the first tube; and a first channel defined in the first portion continuous with the first tube channel; and a second tube channel defined in the second tube; and a second channel defined in the second portion continuous with the second tube channel.

[0012] The evaporation device may include a first nozzle channel and a second nozzle channel defined in the nozzle body member continuous with the first channel, a first opening defined in the first nozzle continuous with the first nozzle channel, and a second opening defined in the second nozzle continuous with the second nozzle channel.

[0013] The first tube may include: a first-first tube connected to the upper portion of the side surface of the first deposition source and extending downward; and a first-second tube connected to the lower portion of the first-first tube and the lower end of the first portion, and the second tube may include: a second-first tube connected to the upper portion of the side surface of the second deposition source and extending downward; and a second-second tube connected to the lower portion of the second-first tube and the lower end of the second portion.

[0014] The evaporation device may further include: a third deposition source; and a fourth deposition source, arranged together with the third deposition source in the first direction, wherein the third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and the main body part and the nozzle main body part are arranged between the first deposition source and the second deposition source and the third deposition source and the fourth deposition source.

[0015] Different deposition materials may be accommodated in the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source, respectively.

[0016] The evaporation device may further include: a third tube connected to the side surface of the third deposition source facing the main body part and the nozzle main body part and the lower end of the main body part; a fourth tube connected to the side surface of the fourth deposition source facing the main body part and the nozzle main body part and the lower end of the main body part; a third nozzle protruding upward from the nozzle main body part; and a fourth nozzle protruding upward from the nozzle main body part.

[0017] The third nozzle and the fourth nozzle may be disposed in the first direction and disposed adjacent to the first nozzle and the second nozzle in the second direction, respectively.

[0018] The third nozzle and the fourth nozzle may directly contact the first nozzle and the second nozzle, respectively, in the second direction.

[0019] The body member may further include a third portion and a fourth portion disposed in the second direction together with the first portion and the second portion, and the third tube may be connected to a lower end of the third portion, and the fourth tube may be connected to a lower end of the fourth portion.

[0020] The evaporation device may include: a third tube channel defined in the third tube; and a third channel defined in the third portion and continuous with the third tube channel; a fourth tube channel defined in the fourth tube; and a fourth channel defined in the fourth portion and continuous with the fourth tube channel; a third nozzle channel defined in the nozzle body component and continuous with the third channel, and a fourth nozzle channel defined in the fourth nozzle body component and continuous with the fourth channel; a third opening defined in the third nozzle and continuous with the third nozzle channel, and a fourth opening defined in the fourth nozzle and continuous with the fourth nozzle channel.

[0021] The first nozzle, the second nozzle, the third nozzle, and the fourth nozzle may be disposed in the first direction.

[0022] The evaporation device may further include: a fifth deposition source spaced apart from the first and second deposition sources in the second direction; and a fifth nozzle connected to an upper end of the fifth deposition source, wherein the first and second deposition sources are disposed between the body part and the fifth deposition source.

[0023] The evaporation device may further include: a third deposition source, arranged in the first direction together with the first deposition source and the second deposition source; a third tube, connected to the third deposition source and a third portion of the main body component; a third nozzle, protruding upward from the nozzle main body component; a fourth deposition source, spaced apart from the nozzle main body component in the second direction; and a plurality of fourth nozzles, connected to the upper end of the fourth deposition source and arranged in the first direction, wherein the main body component is arranged between the first deposition source, the second deposition source, the third deposition source and the fourth deposition source.

[0024] The first nozzle, the second nozzle, and the third nozzle may be disposed in a first direction, and the plurality of fourth nozzles may be obliquely disposed to face the first nozzle, the second nozzle, and the third nozzle.

[0025] The evaporation device may further include: a third deposition source; a fourth deposition source; a third tube connected to the third deposition source and the main body component; a fourth tube connected to the fourth deposition source and the main body component; a third nozzle protruding upward from the nozzle main body component; and a fourth nozzle protruding upward from the nozzle main body component, wherein the first deposition source, the second deposition source, the third deposition source and the fourth deposition source are arranged in the first direction.

[0026] The evaporation device may further include: a third deposition source; a fourth deposition source, arranged in the first direction together with the third deposition source; a third tube, connected to the third deposition source; a fourth tube, connected to the fourth deposition source; and a third nozzle and a fourth nozzle, arranged in the first direction, wherein the main body part may include: a first main body part, connected to the first tube and the second tube; and a second main body part, connected to the third tube and the fourth tube, the nozzle main body part may include: a first nozzle main body part, the first nozzle and the second nozzle protruding from the first nozzle main body part, the first nozzle main body part is arranged on the first main body part; and a second nozzle main body part, arranged on the second main body part, the third nozzle and the fourth nozzle protruding upward from the second nozzle main body part, and the first main body part is arranged in the second direction between the first deposition source and the second deposition source and the second main body part, and the second main body part is arranged in the second direction between the first main body part and the third deposition source and the fourth deposition source.

[0027] The first and second nozzles and the third and fourth nozzles may be obliquely disposed to face each other.

[0028] According to one embodiment, an evaporation device may include: a first deposition source; a second deposition source, arranged in a first direction together with the first deposition source; a first nozzle; a main body component, spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, and may include: a first portion, having a first channel defined in the first portion; and a second portion, having a second channel defined in the second portion; a first tube, connected to a side surface of the first deposition source facing the main body component and a lower portion of the main body component, the first tube having a first tube channel continuous with the first channel; a second tube, connected to a side surface of the second deposition source facing the main body component and a lower portion of the main body component, the second tube having a second tube channel continuous with the second channel; a nozzle main body component, arranged on the main body component and having a first nozzle channel continuous with the first channel and a second nozzle channel continuous with the second channel; a first nozzle, protruding upward from the nozzle main body component and having a first opening continuous with the first nozzle channel; and a second nozzle, protruding upward from the nozzle main body component and having a second opening continuous with the second nozzle channel.

[0029] According to one embodiment, an evaporation device may include: a first deposition source; a second deposition source arranged in a first direction together with the first deposition source; a third deposition source spaced apart from the first deposition source in a second direction intersecting the first direction; a fourth deposition source spaced apart from the second deposition source in a second direction and arranged in the first direction together with the third deposition source; a main body component arranged between the first and second deposition sources and the third and fourth deposition sources; a plurality of tubes connected to the first, second, third, and fourth deposition sources, respectively, and connected to the main body component; a nozzle main body component arranged on the main body component; and first, second, third, and fourth nozzles protruding upward from the nozzle main body component. The first and second nozzles are arranged in the first direction, and the third and fourth nozzles are arranged in the first direction and adjacent to the first and second nozzles in the second direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other objects and features of the present disclosure will become apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0031] Figure 1 is a schematic perspective view of an evaporation device according to an embodiment.

[0032] Figure 2 To view from above Figure 1 Schematic plan view of the evaporation device illustrated in FIG.

[0033] Figure 3 When looking in the first direction Figure 1 The first deposition source and the third deposition source illustrated in FIG. 1 are side views of the evaporation apparatus.

[0034] Figure 4 When looking in the first direction Figure 1 The second deposition source and the fourth deposition source illustrated in FIG. 1 are side views of the evaporation apparatus.

[0035] Figure 5 For Figure 2 The schematic plan view is illustrated by a dotted line. Figure 3 and Figure 4 View of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG.

[0036] Figure 6 For separate examples Figure 5 Schematic plan views of an exemplary first-second tube, second-second tube, third-second tube, and fourth-second tube.

[0037] Figure 7 For the Figure 5 A cross-sectional view taken along line II' shown in FIG.

[0038] Figure 8 To follow Figure 5 A cross-sectional view taken along line II-II' illustrated in FIG.

[0039] Figure 9 To follow Figure 5 sectional view taken along line III-III' illustrated in FIG.

[0040] Figure 10 To follow Figure 5 A cross-sectional view taken along line IV-IV' illustrated in FIG.

[0041] Figure 11 To follow Figure 5 A cross-sectional view taken along line VV' illustrated in FIG.

[0042] Figure 12 To follow Figure 10 A cross-sectional view taken along line VI-VI' illustrated in FIG.

[0043] Figure 13 To follow Figure 11 A cross-sectional view taken along line VII-VII' illustrated in FIG.

[0044] Figure 14 For explanation purposes Figure 1 Schematic diagram of a deposition process in an evaporation apparatus illustrated in FIG.

[0045] Figure 15 As an example, the Figure 1 FIG. 1 is a cross-sectional view of a pixel of an emissive layer formed by an evaporation apparatus illustrated in FIG.

[0046] Figure 16 For explanation purposes Figure 14 FIG. 4 is a diagram illustrating a process of forming an emission layer using an evaporation device. FIG.

[0047] Figure 17 Example from having Figure 1 Different configurations of the evaporation apparatus are illustrated in FIG. 1 , and a dashed line diagram depicting the distribution of the deposition material is shown.

[0048] Figure 18 Example from Figure 1 FIG. 4 illustrates a nozzle of an evaporation device dispensing deposition material onto a substrate and a dashed line graph depicting the distribution of the deposition material.

[0049] Figure 19 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0050] Figures 20 to 23 As an example, Figure 19A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when viewed in the first direction.

[0051] Figures 24 to 27 As an example, Figure 19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when viewed in the second direction.

[0052] Figure 28 is a view illustrating a configuration of an evaporation device according to an embodiment.

[0053] Figure 29 To be able to use Figure 28 Cross-sectional view of a light-emitting element formed using the evaporation apparatus illustrated in FIG.

[0054] Figure 30 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0055] Figure 31 To follow Figure 30 A cross-sectional view taken along line VIII-VIII' illustrated in FIG.

[0056] Figures 32 to 34 As an example, Figure 30 A view of the nozzle body component and the cross-sectional configuration of the first nozzle, the second nozzle and the third nozzle when viewed in the first direction.

[0057] Figures 35 to 37 As an example, Figure 30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when viewed in the second direction.

[0058] Figure 38 As an example, the deposited material is Figure 30 FIG. 4 is a diagram illustrating a distribution of the evaporation device onto a substrate.

[0059] Figure 39 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0060] Figure 40 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0061] Figure 41 As an example, the deposited material is Figure 40 FIG. 4 is a diagram illustrating a distribution of the evaporation device onto a substrate.

[0062] Figure 42 FIG. 1 is a diagram illustrating how deposition material is dispensed onto a substrate from an evaporation apparatus according to an embodiment. DETAILED DESCRIPTION

[0063] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the present disclosure may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the disclosure to those skilled in the art.

[0064] In this specification, when a component (or region, layer, part, etc.) is referred to as being "on", "connected to" or "coupled to" another component, this means that the component may be directly on, connected to or coupled to the other component, or a third component or other components may be present therebetween.

[0065] The same reference numerals refer to the same components. In addition, in the drawings, the thickness, proportion and size of components may be exaggerated for efficient description.

[0066] In the specification and claims, for the purposes of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or." For example, "A and / or B" may be understood to mean "A, B, or A and B." The terms "and" and "or" may be used in a conjunctive or disjunctive sense and may be understood to be equivalent to "and / or."

[0067] In the specification and claims, for the purposes of its meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one selected from the group." For example, "at least one of A and B" is understood to mean "A, B, or A and B."

[0068] Terms such as first, second, etc. may be used to describe various components, but components should not be limited by these terms. Terms may be used only to distinguish one component from other components. For example, a first component may be referred to as a second component, and similarly, a second component may be referred to as a first component without departing from the scope of this disclosure.

[0069] As used herein, the singular forms "a," "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0070] In addition, terms such as "below," "below," "above," and "above" are used to describe the relationship between components illustrated in the drawings. These terms are relative concepts and are described based on the directions illustrated in the drawings.

[0071] The term "overlap" or "overlapped" means that a first object may be on top of, below, or on the side surface of a second object, and vice versa. In addition, the term "overlap" may include layer, stack, facing, facing, extending over, covering, or partially covering, or any other suitable term that can be appreciated and understood by a person of ordinary skill in the art.

[0072] When elements are described as “not overlapping” or “so as not to overlap” another element, this may include the elements being spaced apart, offset, or separated from each other, or any other suitable terminology as would be appreciated and understood by one of ordinary skill in the art.

[0073] The terms "facing" and "facing" mean that the first element can be directly or indirectly opposite to the second element. In the case where a third element is interposed between the first and second elements, the first and second elements can be understood as being indirectly opposite to each other, although still facing each other.

[0074] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation from the stated value as determined by one of ordinary skill in the art, taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0075] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure pertains. These terms, such as those defined in commonly used dictionaries, should be interpreted as having the same meaning as in the context of the relevant technical field and should not be interpreted as having an ideal or overly formal meaning unless expressly defined as having such a meaning in this application.

[0076] It should be understood that terms such as “includes,” “comprising,” and “having,” and variations thereof, when used herein, indicate the presence of stated features, quantities, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, quantities, steps, operations, components, parts, or combinations thereof.

[0077] Hereinafter, various embodiments will be described with reference to the accompanying drawings.

[0078] Figure 1 is a schematic perspective view of an evaporation device according to an embodiment. Figure 2 To view from above Figure 1 Schematic plan view of the evaporation device illustrated in FIG.

[0079] refer to Figure 1 and Figure 2 , an evaporation apparatus DPA according to an embodiment may include a plurality of deposition sources SC1 ˜ SC4 , a body part BDP, a nozzle part NZP, and a plurality of pipes PP1 ˜ PP4 .

[0080] Different deposition materials may be contained in the deposition sources SC1 to SC4. The deposition materials may include a host and a dopant. The deposition sources SC1 to SC4 may include a first deposition source SC1, a second deposition source SC2, a third deposition source SC3, and a fourth deposition source SC4.

[0081] The first deposition source SC1 and the second deposition source SC2 may be arranged (or disposed) in a first direction DR1. The third deposition source SC3 and the fourth deposition source SC4 may be arranged in the first direction DR1. The third deposition source SC3 and the fourth deposition source SC4 may be spaced apart from the first deposition source SC1 and the second deposition source SC2 in a second direction DR2 intersecting the first direction DR1. The third deposition source SC3 may be spaced apart from the first deposition source SC1 in the second direction DR2. The fourth deposition source SC4 may be spaced apart from the second deposition source SC2 in the second direction DR2.

[0082] Each of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may include a body SD and a cover CV coupled or connected to an upper end of the body SD. Each of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may have a receiving space defined therein. The body SD and the cover CV may be coupled or connected to each other to define a receiving space in each of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4.

[0083] Different deposition materials may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4, respectively. For example, the first host may be contained in the first deposition source SC1, the first dopant may be contained in the second deposition source SC2, the second dopant may be contained in the third deposition source SC3, and the second host may be contained in the fourth deposition source SC4.

[0084] However, without limitation thereto, various deposition materials may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4. For example, one host and three dopants may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4, or three hosts and one dopant may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4.

[0085] Hereinafter, a direction intersecting a plane defined by the first direction DR1 and the second direction DR2 is defined as a third direction DR3. The third direction DR3 may be substantially perpendicular to the plane defined by the first direction DR1 and the second direction DR2. As used herein, the expression "when viewed from above a plane" may refer to viewing in the third direction DR3.

[0086] When viewed from above, the body part BDP and the nozzle part NZP may be spaced apart from the first and second deposition sources SC1 and SC2 in the second direction DR2. When viewed from above, the body part BDP and the nozzle part NZP may be spaced apart from the third and fourth deposition sources SC3 and SC4 in the second direction DR2. The body part BDP and the nozzle part NZP may be disposed between the first and second deposition sources SC1 and SC2 and the third and fourth deposition sources SC3 and SC4.

[0087] The nozzle assembly NZP may include a nozzle body assembly NBD disposed on the main body assembly BDP and a plurality of nozzles NZ disposed on the nozzle body assembly NBD. The nozzle body assembly NBD may be connected to the upper end of the main body assembly BDP. The nozzles NZ may protrude upward (e.g., in the third direction DR3) from the upper end of the nozzle body assembly NBD. In one embodiment, the nozzles NZ may be manufactured separately and connected to the upper end of the nozzle body assembly NBD. However, this is not limiting and the nozzles NZ may be integral with the nozzle body assembly NBD.

[0088] The nozzles NZ may include a plurality of first nozzles NZ1 , a plurality of second nozzles NZ2 , a plurality of third nozzles NZ3 , and a plurality of fourth nozzles NZ4 .

[0089] The first nozzle NZ1 and the second nozzle NZ2 may protrude upward from the upper end of the nozzle body part NBD. The first nozzle NZ1 and the second nozzle NZ2 may be adjacent to the first deposition source SC1 and the second deposition source SC2. The first nozzle NZ1 and the second nozzle NZ2 may be arranged in the first direction DR1. The first nozzle NZ1 may alternate with the second nozzle NZ2 in the first direction DR1.

[0090] The third nozzle NZ3 and the fourth nozzle NZ4 may protrude upward from the upper end of the nozzle body part NBD. The third nozzle NZ3 and the fourth nozzle NZ4 may be adjacent to the third deposition source SC3 and the fourth deposition source SC4. The third nozzle NZ3 and the fourth nozzle NZ4 may be arranged in the first direction DR1. The third nozzle NZ3 may alternate with the fourth nozzle NZ4 in the first direction DR1.

[0091] The third nozzle NZ3 and the fourth nozzle NZ4 may be adjacent to the first nozzle NZ1 and the second nozzle NZ2, respectively, in the second direction DR2. Specifically, each third nozzle NZ3 may be adjacent to each first nozzle NZ1, respectively, in the second direction DR2. Each fourth nozzle NZ4 may be adjacent to each second nozzle NZ2, respectively, in the second direction DR2.

[0092] The third nozzle NZ3 and the fourth nozzle NZ4 may be in direct contact with the first nozzle NZ1 and the second nozzle NZ2, respectively, in the second direction DR2. Specifically, each third nozzle NZ3 may be in direct contact with each first nozzle NZ1, respectively, in the second direction DR2. Each fourth nozzle NZ4 may be in direct contact with each second nozzle NZ2, respectively, in the second direction DR2.

[0093] The tubes PP1 ˜ PP4 may include a first tube PP1 connected to the first deposition source SC1 , a second tube PP2 connected to the second deposition source SC2 , a third tube PP3 connected to the third deposition source SC3 , and a fourth tube PP4 connected to the fourth deposition source SC4 .

[0094] The first tube PP1 may be connected to a side surface of the first deposition source SC1 facing the body part BDP and the nozzle body part NBD. The second tube PP2 may be connected to a side surface of the second deposition source SC2 facing the body part BDP and the nozzle body part NBD. The third tube PP3 may be connected to a side surface of the third deposition source SC3 facing the body part BDP and the nozzle body part NBD. The fourth tube PP4 may be connected to a side surface of the fourth deposition source SC4 facing the body part BDP and the nozzle body part NBD.

[0095] The first, second, third, and fourth tubes PP1, PP2, PP3, and PP4 may be connected to the body part BDP. The first, second, third, and fourth tubes PP1, PP2, PP3, and PP4 may extend below the body part BDP and be connected to the body part BDP. This configuration will be described in detail below.

[0096] Figure 3 When looking in the first direction Figure 1 The illustrated first deposition source and third deposition source are side views of the evaporation apparatus. Figure 4 When looking in the first direction Figure 1 The second deposition source and the fourth deposition source illustrated in FIG. 1 are side views of the evaporation apparatus.

[0097] refer to Figure 3 and Figure 4, a first tube PP1 may be connected to a side surface of the first deposition source SC1. The first tube PP1 may extend below the body part BDP and may be connected to a lower end of the body part BDP. A second tube PP2 may be connected to a side surface of the second deposition source SC2. The second tube PP2 may extend below the body part BDP and may be connected to a lower end of the body part BDP.

[0098] The third tube PP3 may be connected to a side surface of the third deposition source SC3. The third tube PP3 may extend below the body part BDP and may be connected to the lower end of the body part BDP. The fourth tube PP4 may be connected to a side surface of the fourth deposition source SC4. The fourth tube PP4 may extend below the body part BDP and may be connected to the lower end of the body part BDP.

[0099] The first tube PP1 may include a first-first tube PP1-1 connected to the side surface of the first deposition source SC1 and a first-second tube PP1-2 connected to the lower end of the body part BDP. The first-first tube PP1-1 may be connected to the upper portion (e.g., cover CV) of the side surface of the first deposition source SC1 and may extend downward. The first-second tube PP1-2 may be connected to the lower portion of the first-first tube PP1-1. The first-second tube PP1-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.

[0100] The second tube PP2 may include a second-first tube PP2-1 connected to the side surface of the second deposition source SC2 and a second-second tube PP2-2 connected to the lower end of the body part BDP. The second-first tube PP2-1 may be connected to the upper portion of the side surface of the second deposition source SC2 (e.g., the cover CV) and may extend downward. The second-second tube PP2-2 may be connected to the lower portion of the second-first tube PP2-1. The second-second tube PP2-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.

[0101] The third tube PP3 may include a third-first tube PP3-1 connected to a side surface of the third deposition source SC3 and a third-second tube PP3-2 connected to the lower end of the body part BDP. The third-first tube PP3-1 may be connected to an upper portion (e.g., cover CV) of a side surface of the third deposition source SC3 and may extend downward. The third-second tube PP3-2 may be connected to a lower portion of the third-first tube PP3-1. The third-second tube PP3-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.

[0102] The fourth tube PP4 may include a fourth-first tube PP4-1 connected to the side surface of the fourth deposition source SC4 and a fourth-second tube PP4-2 connected to the lower end of the body part BDP. The fourth-first tube PP4-1 may be connected to the upper portion (e.g., cover CV) of the side surface of the fourth deposition source SC4 and may extend downward. The fourth-second tube PP4-2 may be connected to the lower portion of the fourth-first tube PP4-1. The fourth-second tube PP4-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.

[0103] Upper portions of side surfaces of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may be defined by side surfaces of covers CV thereof, respectively.

[0104] In the following, reference will be made to Figure 5 and Figure 6 The planar structures of the first-second tube PP1-2, the second-second tube PP2-2, the third-second tube PP3-2, and the fourth-second tube PP4-2 are described in detail.

[0105] Figure 5 For Figure 2 The schematic plan view is illustrated by a dotted line. Figure 3 and Figure 4 View of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG. Figure 6 For separate examples Figure 5 Schematic plan view of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG.

[0106] refer to Figure 5 and Figure 6 When viewed from above, the first and second tubes PP1 and PP2 may be adjacent to the first and second deposition sources SC1 and SC2, respectively, in the second direction DR2. When viewed from above, the third and fourth tubes PP3 and PP4 may be adjacent to the third and fourth deposition sources SC3 and SC4, respectively, in the second direction DR2.

[0107] The first and second tubes PP1 and PP2 may be adjacent to each other in the first direction DR1 when viewed from above. The third and fourth tubes PP3 and PP4 may be adjacent to each other in the first direction DR1 when viewed from above.

[0108] The first-second tube PP1-2 and the second tube PP2-2 may be arranged in the first direction DR1 and may be disposed to face each other in the first direction DR1. The third-second tube PP3-2 and the fourth-second tube PP4-2 may be arranged in the first direction DR1 and may be disposed to face each other in the first direction DR1.

[0109] When viewed from above, the first-second tubes PP1-2 and the second-second tubes PP2-2 may have a quadrilateral shape. In the second direction DR2, the second-second tubes PP2-2 may be longer than the first-second tubes PP1-2. It should be understood that the tube shapes are not limited to those disclosed herein and may also include shapes substantially identical to those disclosed herein.

[0110] When viewed from above, the third-second tube PP3-2 and the fourth-second tube PP4-2 may have a quadrilateral shape. In the second direction DR2, the length of the third-second tube PP3-2 may be longer than that of the fourth-second tube PP4-2.

[0111] The first-second tube PP1-2 and the third-second tube PP3-2 may be arranged between the first deposition source SC1 and the third deposition source SC3 in the second direction DR2. According to this structure, the side surfaces of the first-second tube PP1-2 and the third-second tube PP3-2 may be Figure 3 exemplified in the side view of .

[0112] The second-second tube PP2-2 and the fourth-second tube PP4-2 may be arranged between the second deposition source SC2 and the fourth deposition source SC4 in the second direction DR2. According to this structure, the side surfaces of the second-second tube PP2-2 and the fourth-second tube PP4-2 may be Figure 4 exemplified in the side view of .

[0113] Openings OP may be defined in the first-second tube PP1-2, the second-second tube PP2-2, the third-second tube PP3-2, and the fourth-second tube PP4-2, respectively. The openings OP may be defined to face the body part BDP. The openings OP may have a quadrilateral shape.

[0114] Figure 7 For the Figure 5 A cross-sectional view taken along line II' shown in FIG. Figure 8 To follow Figure 5 A cross-sectional view taken along line II-II' illustrated in FIG.

[0115] refer to Figure 7 and Figure 8The body part BDP may include a first portion PT1, a second portion PT2, a third portion PT3, and a fourth portion PT4 arranged in the second direction DR2. The nozzle body part NBD may be provided on the first portion PT1, the second portion PT2, the third portion PT3, and the fourth portion PT4.

[0116] The first-second tube PP1-2 may be disposed under the first portion PT1 and may be connected to the first portion PT1. The second-second tube PP2-2 may be disposed under the first and second portions PT1 and may be connected to the first and second portions PT2.

[0117] The third-second pipe PP3-2 may be disposed under the third portion PT3 and the fourth portion PT4 and may be connected to the third portion PT3 and the fourth portion PT4. The fourth-second pipe PP4-2 may be disposed under the fourth portion PT4 and may be connected to the fourth portion PT4.

[0118] The first deposition material DM1 may be accommodated in a first receiving space AS1 defined in the first deposition source SC1. The second deposition material DM2 may be accommodated in a second receiving space AS2 defined in the second deposition source SC2. The third deposition material DM3 may be accommodated in a third receiving space AS3 defined in the third deposition source SC3. The fourth deposition material DM4 may be accommodated in a fourth receiving space AS4 defined in the fourth deposition source SC4.

[0119] The first deposition material DM1 may include a first host, and the second deposition material DM2 may include a first dopant. The third deposition material DM3 may include a second dopant, and the fourth deposition material DM4 may include a second host.

[0120] Although not illustrated, the first to fourth deposition sources SC1 , SC2 , SC3 , and SC4 may include heat sources for heating and evaporating the first to fourth deposition materials DM1 , DM2 , DM3 , and DM4 .

[0121] The first tube passage PI1 may be defined in the first tube PP1, and the second tube passage PI2 may be defined in the second tube PP2. The third tube passage PI3 may be defined in the third tube PP3, and the fourth tube passage PI4 may be defined in the fourth tube PP4.

[0122] The first tube passage PI1 may be defined as continuous with the first receiving space AS1. The second tube passage PI2 may be defined as continuous with the second receiving space AS2. The third tube passage PI3 may be defined as continuous with the third receiving space AS3. The fourth tube passage PI4 may be defined as continuous with the fourth receiving space AS4.

[0123] The first passage P1 may be defined in the first portion PT1, and the second passage P2 may be defined in the second portion PT2. The third passage P3 may be defined in the third portion PT3, and the fourth passage P4 may be defined in the fourth portion PT4. The first passage P1, the second passage P2, the third passage P3, and the fourth passage P4 may extend in a third direction DR3.

[0124] The first channel P1 may be defined as continuous with the first tube channel PI1. The second channel P2 may be defined as continuous with the second tube channel PI2. The third channel P3 may be defined as continuous with the third tube channel PI3. The fourth channel P4 may be defined as continuous with the fourth tube channel PI4.

[0125] Figure 6 The opening OP illustrated in FIG may be defined in upper portions of the first to fourth tubes PP1-2, PP2-2, PP3-2, and PP4-2. The first to fourth passages P1-P4 may be defined to be continuous with the first to fourth tube passages PI1-PI4 through the opening OP.

[0126] A first nozzle passage NP1, a second nozzle passage NP2, a third nozzle passage NP3, and a fourth nozzle passage NP4 may be defined in the nozzle body part NBD. The first nozzle passage NP1 may be defined to be continuous with the first passage P1, and the second nozzle passage NP2 may be defined to be continuous with the second passage P2. The third nozzle passage NP3 may be defined to be continuous with the third passage P3, and the fourth nozzle passage NP4 may be defined to be continuous with the fourth passage P4.

[0127] The first deposition material DM1 may be evaporated in the first deposition source SC1, and the evaporated first deposition material DM1 may move through the first tube passage PI1, the first passage P1, and the first nozzle passage NP1. The second deposition material DM2 may be evaporated in the second deposition source SC2, and the evaporated second deposition material DM2 may move through the second tube passage PI2, the second passage P2, and the second nozzle passage NP2.

[0128] The third deposition material DM3 may be evaporated in the third deposition source SC3, and the evaporated third deposition material DM3 may move through the third tube passage PI3, the third passage P3, and the third nozzle passage NP3. The fourth deposition material DM4 may be evaporated in the fourth deposition source SC4, and the evaporated fourth deposition material DM4 may move through the fourth tube passage PI4, the fourth passage P4, and the fourth nozzle passage NP4.

[0129] Figure 9 To follow Figure 5 sectional view taken along line III-III' illustrated in FIG.

[0130] For ease of description, Figure 9The nozzle part NZP is omitted.

[0131] refer to Figure 9 The first-second tube PP1-2 of the first tube PP1 may be disposed under the first portion PT1 and connected to the lower end of the first portion PT1. The second-second tube PP2-2 of the second tube PP2 may be disposed under the second portion PT2 and connected to the lower end of the second portion PT2.

[0132] The third-second pipe PP3-2 of the third pipe PP3 may be disposed under the third portion PT3 and connected to the lower end of the third portion PT3. The fourth-second pipe PP4-2 of the fourth pipe PP4 may be disposed under the fourth portion PT4 and connected to the lower end of the fourth portion PT4.

[0133] The first deposition material DM1 may move through the first tube passage PI1 defined in the first-second tube PP1-2 and the first passage P1 defined in the first portion PT1. The second deposition material DM2 may move through the second tube passage PI2 defined in the second-second tube PP2-2 and the second passage P2 defined in the second portion PT2.

[0134] The third deposition material DM3 may move through the third tube passage PI3 defined in the third-second tube PP3-2 and the third passage P3 defined in the third portion PT3. The fourth deposition material DM4 may move through the fourth tube passage PI4 defined in the fourth-second tube PP4-2 and the fourth passage P4 defined in the fourth portion PT4.

[0135] Figure 10 To follow Figure 5 A cross-sectional view taken along line IV-IV' illustrated in FIG. Figure 11 To follow Figure 5 A cross-sectional view taken along line VV' illustrated in FIG.

[0136] For ease of description, Figure 10 and Figure 11 The lower portion of the main body part BDP is omitted.

[0137] refer to Figure 10 and Figure 11 , a first opening OP1 may be defined in the first nozzle NZ1. The first opening OP1 may be defined to be continuous with the first nozzle channel NP1. For example, a first connecting channel CP1 may be defined to be continuous with the first nozzle channel NP1 and extend toward the first nozzle NZ1 in the nozzle body part NBD. The first opening OP1 may be defined to be continuous with the first connecting channel CP1. For example, the first opening OP1 may be defined to be continuous with the first nozzle channel NP1 via the first connecting channel CP1.

[0138] A second opening OP2 may be defined in the second nozzle NZ2. The second opening OP2 may be defined to be continuous with the second nozzle passage NP2. For example, a second connecting passage CP2 may be defined to be continuous with the second nozzle passage NP2 and extend toward the second nozzle NZ2 in the nozzle body part NBD. The second opening OP2 may be defined to be continuous with the second connecting passage CP2. For example, the second opening OP2 may be defined to be continuous with the second nozzle passage NP2 via the second connecting passage CP2.

[0139] The third opening OP3 may be defined in the third nozzle NZ3. The third opening OP3 may be defined to be continuous with the third nozzle passage NP3. For example, a third connecting passage CP3 may be defined to be continuous with the third nozzle passage NP3 and extend toward the third nozzle NZ3 in the nozzle body part NBD. The third opening OP3 may be defined to be continuous with the third connecting passage CP3. For example, the third opening OP3 may be defined to be continuous with the third nozzle passage NP3 via the third connecting passage CP3.

[0140] A fourth opening OP4 may be defined in the fourth nozzle NZ4. The fourth opening OP4 may be defined to be continuous with the fourth nozzle passage NP4. For example, a fourth connecting passage CP4 may be defined to be continuous with the fourth nozzle passage NP4 and extend toward the fourth nozzle NZ4 in the nozzle body part NBD. The fourth opening OP4 may be defined to be continuous with the fourth connecting passage CP4. For example, the fourth opening OP4 may be defined to be continuous with the fourth nozzle passage NP4 via the fourth connecting passage CP4.

[0141] exist Figure 10 In FIG, the second connection channel CP2 and the fourth connection channel CP4 are illustrated by dotted lines, and Figure 11 , the first connection channel CP1 and the third connection channel CP3 are illustrated by dotted lines.

[0142] The first deposition material DM1 may be dispensed through the first nozzle NZ1 . Specifically, the evaporated first deposition material DM1 may be dispensed upward through the first nozzle passage NP1 , the first connection passage CP1 , and the first opening OP1 .

[0143] The second deposition material DM2 may be dispensed through the second nozzle NZ2 . Specifically, the evaporated second deposition material DM2 may be dispensed upward through the second nozzle channel NP2 , the second connection channel CP2 , and the second opening OP2 .

[0144] The third deposition material DM3 may be dispensed through the third nozzle NZ3 . Specifically, the evaporated third deposition material DM3 may be dispensed upward through the third nozzle passage NP3 , the third connection passage CP3 , and the third opening OP3 .

[0145] The fourth deposition material DM4 may be dispensed through the fourth nozzle NZ4 . Specifically, the evaporated fourth deposition material DM4 may be dispensed upward through the fourth nozzle passage NP4 , the fourth connection passage CP4 , and the fourth opening OP4 .

[0146] The first to fourth deposition materials DM1 ˜ DM4 may be provided to the first to fourth nozzles NZ1 ˜ NZ4 through the first to fourth nozzle passages NP1 ˜ NP4 and the first to fourth connection passages CP1 ˜ CP4 defined in the single nozzle body part NBD.

[0147] Figure 12 To follow Figure 10 A cross-sectional view taken along line VI-VI' shown in FIG. Figure 13 To follow Figure 11 A cross-sectional view taken along line VII-VII' illustrated in FIG.

[0148] Figure 12 and Figure 13 exemplifies a cross section taken along line VI-VI' and line VI-VII' in the first direction DR1, wherein Figure 12 and Figure 13 is a cross-sectional view viewed in the second direction DR2. Basically, Figure 12 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, and Figure 13 2 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2. Figure 12 and Figure 13 Example in Figure 1 Cross sections of seven nozzles NZ among the nozzles NZ illustrated in FIG.

[0149] refer to Figure 12 , a plurality of first connection channels CP1 may be defined in the nozzle body part NBD. The first connection channel CP1 may be defined to be continuous with the first nozzle channel NP1 and may extend in the third direction DR3. A portion of the second connection channel CP2 is formed in the nozzle body part NBD. Figure 12 exemplified in the cross-sectional view of .

[0150] The first connection channels CP1 may extend toward the first nozzles NZ1, respectively. The first openings OP1 defined in the first nozzles NZ1 may be defined to be continuous with the first connection channels CP1, respectively. For example, the first openings OP1 and the first connection channels CP1 may be formed as an integral continuous space.

[0151] refer to Figure 13 , a plurality of second connection channels CP2 may be defined in the nozzle body part NBD. The second connection channels CP2 may be defined to be continuous with the second nozzle channel NP2 and may extend in the third direction DR3. A portion of the first connection channel CP1 is formed in the nozzle body part NBD. Figure 13 exemplified in the cross-sectional view of .

[0152] The second connection channels CP2 may extend toward the second nozzles NZ2, respectively. The second openings OP2 defined in the second nozzles NZ2 may be defined to be continuous with the second connection channels CP2, respectively. For example, the second openings OP2 and the second connection channels CP2 may be formed as a continuous space.

[0153] refer to Figure 12 and Figure 13 , since the first nozzles NZ1 alternate with the second nozzles NZ2 , the first openings OP1 may alternate with the second openings OP2 , and the first connection channels CP1 may alternate with the second connection channels CP2 .

[0154] Although not illustrated, the cross-sectional configuration of the third opening OP3 and the third connection channel CP3 may be substantially the same as the cross-sectional configuration of the first opening OP1 and the first connection channel CP1. Although not illustrated, the cross-sectional configuration of the fourth opening OP4 and the fourth connection channel CP4 may be substantially the same as the cross-sectional configuration of the second opening OP2 and the second connection channel CP2.

[0155] Figure 14 For explanation purposes Figure 1 Schematic diagram of a deposition process in an evaporation apparatus illustrated in FIG.

[0156] exist Figure 14 In the example, the scale is reduced Figure 4 Therefore, the side surface of the evaporation apparatus DPA is illustrated in a state where the second nozzle NZ2 and the fourth nozzle NZ4 and the second deposition source SC2 and the fourth deposition source SC4 are viewed, and for convenience of description, the side surface of the evaporation apparatus DPA is illustrated in Figure 14 1 and 2 , and the reference numerals of the first and third nozzles NZ1 and NZ3 and the first and third deposition sources SC1 and SC3 are illustrated together.

[0157] refer to Figure 14 The substrate SUB may be disposed above the evaporation apparatus DPA. A mask MK may be disposed on the lower surface of the substrate SUB. Although not illustrated, the mask MK may define a plurality of openings for the deposition material to pass therethrough. An angle limiting plate ALP may be disposed between the mask MK and the evaporation apparatus DPA.

[0158] refer to Figure 1 and Figure 14 The evaporated deposition material DM may be distributed upward from the first deposition source SC1 to the fourth deposition source SC4 through the nozzle NZ. The distribution angle of the deposition material DM may be limited by the angle limiting plate ALP.

[0159] The deposition material DM may include the first to fourth deposition materials DM1 to DM4 described above. As described above, the first to fourth deposition materials DM1 to DM4 may include a host and a dopant.

[0160] The deposition material DM may be provided on the substrate SUB through the opening of the mask MK and may be deposited on the substrate SUB. The deposition material DM may be provided on the substrate SUB while the substrate SUB and the mask MK move in the second direction DR2. However, the present invention is not limited thereto, and the deposition material DM may be provided on the substrate SUB while the evaporation apparatus DPA moves in the second direction DR2.

[0161] Figure 15 As an example, the Figure 1 FIG. 1 is a cross-sectional view of a pixel of an emissive layer formed by an evaporation apparatus illustrated in FIG.

[0162] refer to Figure 15 , the pixel PX may include a transistor TR and a light emitting element OLED connected to the transistor TR. Although one pixel PX is illustrated as an example, a plurality of pixels PX may be basically provided on the substrate SUB.

[0163] The light emitting element OLED may include a first electrode AE, a second electrode CE, a hole control layer HCL, an electron control layer ECL, and an emission layer EML. The first electrode AE may be an anode electrode, and the second electrode CE may be a cathode electrode.

[0164] The transistor TR and the light emitting element OLED may be disposed on the substrate SUB. The flat area of the substrate SUB may be divided into an emission portion PA and a non-emission portion NPA surrounding the emission portion PA. The light emitting element OLED may be disposed on the emission portion PA.

[0165] The substrate SUB may include a glass substrate or a flexible plastic substrate. The buffer layer BFL may be disposed on the substrate SUB. The buffer layer BFL may be an inorganic layer.

[0166] The semiconductor patterns S, A, and D may be disposed on the buffer layer BFL. The semiconductor patterns S, A, and D may include polysilicon. However, not limited thereto, the semiconductor patterns S, A, and D may include amorphous silicon or metal oxide.

[0167] The semiconductor patterns S, A, and D may be doped with an N-type dopant or a P-type dopant. The semiconductor patterns S, A, and D may include a heavily doped region and a lightly doped region. The heavily doped region may have a higher conductivity than the lightly doped region and may substantially function as a source electrode and a drain electrode of the transistor TR. The lightly doped region may substantially correspond to an active (or channel) region of the transistor TR.

[0168] The source S, active area A, and drain D of the transistor TR may be formed by semiconductor patterns S, A, and D. A first insulating layer INS1 may be disposed on the semiconductor patterns S, A, and D. A gate G of the transistor TR may be disposed on the first insulating layer INS1. A second insulating layer INS2 may be disposed on the gate G. A third insulating layer INS3 may be disposed on the second insulating layer INS2.

[0169] The connection electrode CNE may be disposed between the transistor TR and the light emitting element OLED and may connect the transistor TR and the light emitting element OLED. The connection electrode CNE may include a first connection electrode CNE1 and a second connection electrode CNE2.

[0170] The first connection electrode CNE1 may be disposed on the third insulating layer INS3 and may be connected to the drain electrode D through a first contact hole CH1 defined in the first to third insulating layers INS1 to INS3. A fourth insulating layer INS4 may be disposed on the first connection electrode CNE1. A fifth insulating layer INS5 may be disposed on the fourth insulating layer INS4.

[0171] The second connection electrode CNE2 may be disposed on the fifth insulating layer INS5. The second connection electrode CNE2 may be connected to the first connection electrode CNE1 through a second contact hole CH2 defined in the fourth insulating layer INS4 and the fifth insulating layer INS5. The sixth insulating layer INS6 may be disposed on the second connection electrode CNE2. The first to sixth insulating layers INS1 to INS6 may be inorganic layers or organic layers.

[0172] The first electrode AE may be disposed on the sixth insulating layer INS6. The first electrode AE may be connected to the second connection electrode CNE2 via a third contact hole CH3 defined in the sixth insulating layer INS6. A pixel defining layer PDL that exposes a selectable portion of the first electrode AE may be disposed on the first electrode AE and the sixth insulating layer INS6. An opening PX-OP for exposing the selectable portion of the first electrode AE may be defined in the pixel defining layer PDL.

[0173] The hole control layer HCL may be disposed on the first electrode AE and the pixel defining layer PDL. The hole control layer HCL may be disposed on both the emission portion PA and the non-emission portion NPA. The hole control layer HCL may include a hole transport layer and a hole injection layer.

[0174] The emission layer EML may be disposed on the hole control layer HCL. The emission layer EML may be disposed in a region corresponding to the opening PX_OP. The emission layer EML may include an organic material and / or an inorganic material. The emission layer EML may generate one of red light, green light, and blue light.

[0175] The electron control layer ECL may be disposed on the emission layer EML and the hole control layer HCL. The electron control layer ECL may be disposed on both the emission portion PA and the non-emission portion NPA. The electron control layer ECL may include an electron transport layer and an electron injection layer.

[0176] The second electrode CE may be disposed on the electron control layer ECL. The second electrode CE may be commonly disposed in the pixel PX.

[0177] A thin film encapsulation layer (TFE) may be disposed on the light-emitting element (OLED). The thin film encapsulation layer (TFE) may be disposed on the second electrode (CE) and may cover the pixel (PX). The thin film encapsulation layer (TFE) may include at least two inorganic layers and an organic layer between the inorganic layers. The inorganic layer may protect the pixel (PX) from moisture and oxygen. The organic layer may protect the pixel (PX) from foreign matter such as dust particles.

[0178] A first voltage may be applied to the first electrode AE through the transistor TR, and a second voltage having a level lower than the first voltage may be applied to the second electrode CE. Holes and electrons injected into the emission layer EML may combine to form excitons, and as the excitons transition to a ground state, the light emitting element OLED may emit light.

[0179] Figure 16 For explanation purposes Figure 14 FIG. 4 is a diagram illustrating a process of forming an emission layer using an evaporation device. FIG.

[0180] refer to Figure 16 , the mask MK may be disposed above the substrate SUB. For ease of description, the emission layer EML is illustrated as facing upward, and the mask MK is illustrated as being disposed above the emission layer EML. However, Figure 16 The structure illustrated in FIG can be substantially equivalent to the structure of FIG in the deposition process. Figure 14 For example, the emission layer EML may face downward, the mask MK may be disposed below or under the emission layer EML, and the evaporation device DPA may be disposed below or under the mask MK.

[0181] The hole control layer HCL may be disposed on the first electrode AE, and the mask MK may be used to form the emission layer EML on the hole control layer HCL. The deposition material DM may be provided on the hole control layer HCL through the opening MOP defined in the mask MK. The emission layer EML may be formed of the deposition material DM.

[0182] Although one emission layer EML is formed on the substrate SUB, a plurality of emission layers EML may be formed on the substrate SUB.

[0183] Figure 17 Example from having Figure 1Different configurations of the evaporation apparatus are illustrated in FIG. 1 , and a dashed line graph depicting the distribution of the deposited material is shown. Figure 18 Example from Figure 1 FIG. 4 illustrates a nozzle of an evaporation device dispensing deposition material onto a substrate and a dashed line diagram illustrating the distribution of the deposition material.

[0184] exist Figure 17 and Figure 18 In FIG, for convenience of description, a dotted line diagram depicting the distribution of the deposition materials M1, M2, and DM1 to DM4 is illustrated above the substrate SUB on which the deposition materials M1, M2, and DM1 to DM4 are provided. The dotted line diagram may substantially represent the amount of the deposition materials M1, M2, and DM1 to DM4 distributed toward the substrate SUB. Figure 17 and Figure 18 In the example, the mask MK is omitted. In addition, Figure 18 For Figure 14 In the corresponding side view, and for convenience of description, the first to fourth deposition sources SC1 to SC4 and the first to fourth tubes PP1 to PP4 are omitted.

[0185] refer to Figure 17 The evaporation apparatus DPA' may include a first deposition source SC1', a first nozzle N1 disposed on the first deposition source SC1', a second deposition source SC2' arranged in the second direction DR2 together with the first deposition source SC1', and a second nozzle N2 disposed on the second deposition source SC2'.

[0186] The first deposition material M1 may be contained in the first deposition source SC1 ′, and the second deposition material M2 may be contained in the second deposition source SC2 ′. For example, the first deposition material M1 may be a host, and the second deposition material M2 may be a dopant.

[0187] The first deposition material M1 may be evaporated in the first deposition source SC1' and may be dispensed toward the substrate SUB through the first nozzle N1. The area of the substrate SUB on which the first deposition material M1 is provided may be defined as a first deposition area DA1'. The amount of the first deposition material M1 may gradually increase toward the center of the first deposition area DA1' and may gradually decrease toward the periphery of the first deposition area DA1'.

[0188] The second deposition material M2 may be evaporated in the second deposition source SC2' and may be dispensed toward the substrate SUB through the second nozzle N2. The area of the substrate SUB on which the second deposition material M2 is provided may be defined as a second deposition area DA2'. The amount of the second deposition material M2 may gradually increase toward the center of the second deposition area DA2' and may gradually decrease toward the periphery of the second deposition area DA2'.

[0189] The first deposition material M1 and the second deposition material M2 may be provided on the substrate SUB in a selectable ratio. For example, the first deposition material M1 and the second deposition material M2 may be provided on the substrate SUB in a ratio of 8:2. The amount of the first deposition material M1 provided on the substrate SUB may be greater than the amount of the second deposition material M2 provided on the substrate SUB. Figure 17 , the distribution diagram of the first deposition material M1 is illustrated above the distribution diagram of the second deposition material M2.

[0190] In the case where the first nozzle N1 and the second nozzle N2 are spaced apart from each other, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB in a selectable ratio. For example, the ratio between the first deposition material M1 and the second deposition material M2 at the first highest point MP1 where the maximum amount of the first deposition material M1 is provided may be different from the ratio between the first deposition material M1 and the second deposition material M2 at the second highest point MP2 where the maximum amount of the second deposition material M2 is provided.

[0191] The difference DF1 between the first deposition material M1 and the second deposition material M2 at the first highest point MP1 may be greater than the difference DF2 between the first deposition material M1 and the second deposition material M2 at the second highest point MP2. For example, the ratio of the first deposition material M1 to the second deposition material M2 may further increase at the first highest point MP1 and may decrease at the second highest point MP2. For example, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB in a selectable ratio.

[0192] The difference between the distribution profile of the first deposition material M1 and the distribution profile of the second deposition material M2 must be constant so that the first deposition material M1 and the second deposition material M2 are provided on the substrate SUB at a selectable ratio. However, since the first nozzle N1 and the second nozzle N2 are spaced apart from each other, the distribution profile of the first deposition material M1 does not match the distribution profile of the second deposition material M2. Therefore, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB at a selectable ratio.

[0193] In this case, the mixing ratio between the first deposition material M1 and the second deposition material M2 of the emission layer EML formed on the substrate SUB may not be constant. Therefore, the emission layer EML may have different lifespans, and thus the reliability of the pixel PX may be reduced.

[0194] In the following, Figure 18 In the present invention, the dispensing operation of the first nozzle NZ1 and the dispensing operation of the second nozzle NZ2 will be described together, because the first nozzle NZ1 and the second nozzle NZ2 are arranged in the same row in the first direction DR1. Figure 18Hereinafter, the dispensing operation of the third nozzle NZ3 and the dispensing operation of the fourth nozzle NZ4 will be described together because the third nozzle NZ3 and the fourth nozzle NZ4 are arranged in the same row in the first direction DR1.

[0195] refer to Figure 1 and Figure 18 , the first deposition material DM1 may be dispensed onto the substrate SUB through the first nozzle NZ1, and the third deposition material DM3 may be dispensed onto the substrate SUB through the third nozzle NZ3. The second deposition material DM2 may be dispensed onto the substrate SUB through the second nozzle NZ2 disposed in the same row as the first nozzle NZ1, and the fourth deposition material DM4 may be dispensed onto the substrate SUB through the fourth nozzle NZ4 disposed in the same row as the third nozzle NZ3.

[0196] The first deposition material DM1, the second deposition material DM2, the third deposition material DM3, and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio. The amount of the first deposition material DM1 and the fourth deposition material DM4 including the body provided on the substrate SUB may be greater than the amount of the second deposition material DM2 and the third deposition material DM3 including the dopant provided on the substrate SUB. Figure 18 , the distribution graphs of the first deposition material DM1 and the fourth deposition material DM4 are illustrated above the distribution graphs of the second deposition material DM2 and the third deposition material DM3 .

[0197] For example, the amount of the first deposition material DM1 provided on the substrate SUB may be greater than the amount of the fourth deposition material DM4 provided on the substrate SUB. Therefore, the distribution diagram of the first deposition material DM1 is illustrated above the distribution diagram of the fourth deposition material DM4. In addition, the amount of the second deposition material DM2 provided on the substrate SUB may be greater than the amount of the third deposition material DM3 provided on the substrate SUB. Therefore, the distribution diagram of the second deposition material DM2 is illustrated above the distribution diagram of the third deposition material DM3.

[0198] An area of the substrate SUB on which the first and second deposition materials DM1 and DM2 are provided may be defined as a first deposition area DA1 , and an area of the substrate SUB on which the third and fourth deposition materials DM3 and DM4 are provided may be defined as a second deposition area DA2 .

[0199] The amounts of the first deposition material DM1 and the second deposition material DM2 may gradually increase toward the center of the first deposition area DA1, and the amounts of the first deposition material DM1 and the second deposition material DM2 may gradually decrease toward the periphery of the first deposition area DA1. The amounts of the third deposition material DM3 and the fourth deposition material DM4 may gradually increase toward the center of the second deposition area DA2, and the amounts of the third deposition material DM3 and the fourth deposition material DM4 may gradually decrease toward the periphery of the second deposition area DA2.

[0200] The first deposition material DM1 and the second deposition material DM2 can be provided on the same first deposition area DA1 because the first nozzle NZ1 and the second nozzle NZ2 are arranged in the same row. Therefore, the difference between the first deposition material DM1 and the second deposition material DM2 can be constant. For example, the first deposition material DM1 and the second deposition material DM2 can be provided on the substrate SUB in a selectable ratio.

[0201] The third deposition material DM3 and the fourth deposition material DM4 can be provided on the same second deposition area DA2 because the third nozzle NZ3 and the fourth nozzle NZ4 are arranged in the same row. Therefore, the difference between the third deposition material DM3 and the fourth deposition material DM4 can be constant. For example, the third deposition material DM3 and the fourth deposition material DM4 can be provided on the substrate SUB in a selectable ratio.

[0202] Although Figure 17 The first nozzle N1 and the second nozzle N2 are spaced apart from each other in the second direction DR2, but Figure 18 The first nozzle NZ1 and the third nozzle NZ3 in the second direction DR2 may be in close contact with each other. Figure 18 In the embodiment, the second nozzle NZ2 and the fourth nozzle NZ4 may be in close contact with each other in the second direction DR2. Therefore, a gap between the first nozzle NZ1 and the third nozzle NZ3 may be minimized.

[0203] The difference between the first deposition area DA1 and the second deposition area DA2 may be less than Figure 17 The difference between the first deposition area DA1' and the second deposition area DA2' illustrated in FIG. 4. For example, the difference between the first deposition area DA1 and the second deposition area DA2 may be minimized.

[0204] In this case, in Figure 17 In the case where the difference between the distribution profile of the first deposition material M1 and the distribution profile of the second deposition material M2 is compared with the difference between the distribution profiles of the first deposition material M1 and the second deposition material M2 illustrated in FIG, the difference between the distribution profile of the first deposition material DM1 and the distribution profile of the third deposition material DM3 may be constant.

[0205] The distribution profile of the first deposition material DM1 and the distribution profile of the third deposition material DM3 can similarly match each other because the gap between the first nozzle NZ1 and the third nozzle NZ3 is minimized. For the same reason, the distribution profile of the second deposition material DM2 and the distribution profile of the fourth deposition material DM4 can similarly match each other because the gap between the second nozzle NZ2 and the fourth nozzle NZ4 is minimized.

[0206] In this case, a mixing ratio between the first to fourth deposition materials DM1 to DM4 of the emission layer EML formed on the substrate SUB may be constant, and thus, the reliability of the pixel PX may be improved.

[0207] Figure 19 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0208] Figure 19 For Figure 5 The following description will focus on the corresponding plan view. Figure 5 The evaporation device DPA and Figure 19 The differences between the evaporation apparatus DPA-1 illustrated in FIG.

[0209] refer to Figure 19 The first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3, and the fourth nozzle NZ4 may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3, and the fourth nozzle NZ4 may be repeatedly arranged in the first direction DR1 in the order of the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3, and the fourth nozzle NZ4.

[0210] Figures 20 to 23 As an example, Figure 19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when viewed in the first direction.

[0211] Figures 20 to 23 For Figure 10 and Figure 11 Corresponding cross-sectional view. Figure 20 is a cross-sectional view of the first nozzle NZ1 when viewed in the first direction DR1, and Figure 21 4 is a cross-sectional view of the second nozzle NZ2 when viewed in the first direction DR1 . Figure 22 is a cross-sectional view of the third nozzle NZ3 when viewed in the first direction DR1, and Figure 23 4 is a cross-sectional view of the fourth nozzle NZ4 when viewed in the first direction DR1.

[0212] refer to Figure 20, a first connection channel CP1 extending from the first nozzle channel NP1 toward the first nozzle NZ1 may be defined in the nozzle body part NBD. A first opening OP1 defined in the first nozzle NZ1 may be defined to be continuous with the first connection channel CP1. Figure 20 , the second connection channel CP2 , the third connection channel CP3 and the fourth connection channel CP4 are illustrated by dotted lines.

[0213] refer to Figure 21 , a second connection channel CP2 extending from the second nozzle channel NP2 toward the second nozzle NZ2 may be defined in the nozzle body part NBD. A second opening OP2 defined in the second nozzle NZ2 may be defined to be continuous with the second connection channel CP2. Figure 21 , the first connection channel CP1 , the third connection channel CP3 and the fourth connection channel CP4 are illustrated by dotted lines.

[0214] refer to Figure 22 , a third connection channel CP3 extending from the third nozzle channel NP3 toward the third nozzle NZ3 may be defined in the nozzle body part NBD. A third opening OP3 defined in the third nozzle NZ3 may be defined to be continuous with the third connection channel CP3. Figure 22 , the first connection channel CP1 , the second connection channel CP2 and the fourth connection channel CP4 are illustrated by dotted lines.

[0215] refer to Figure 23 , a fourth connection passage CP4 extending from the fourth nozzle passage NP4 toward the fourth nozzle NZ4 may be defined in the nozzle body part NBD. A fourth opening OP4 defined in the fourth nozzle NZ4 may be defined to be continuous with the fourth connection passage CP4. Figure 23 , the first connection channel CP1 , the second connection channel CP2 and the third connection channel CP3 are illustrated by dotted lines.

[0216] Figures 24 to 27 As an example, Figure 19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when viewed in the second direction.

[0217] Figures 24 to 27 For Figure 12 and Figure 13 The corresponding cross-sectional view. Figures 24 to 27 Example in Figure 19 Cross sections of eight of the nozzles NZ are shown as examples.

[0218] Figure 24 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, and Figure 25 2 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2. Figure 26is a cross-sectional view of the third opening OP3 and the third connecting channel CP3, and Figure 27 4 is a cross-sectional view of the fourth opening OP4 and the fourth connecting channel CP4.

[0219] refer to Figure 24 A plurality of first connection channels CP1 extending from the first nozzle channel NP1 toward the first nozzle NZ1 may be defined in the nozzle body part NBD. A first opening OP1 may be defined in the first nozzle NZ1 so as to be continuous with the first connection channels CP1.

[0220] refer to Figure 25 A plurality of second connection channels CP2 extending from the second nozzle channel NP2 toward the second nozzle NZ2 may be defined in the nozzle body part NBD. A second opening OP2 may be defined in the second nozzle NZ2 so as to be continuous with the second connection channels CP2.

[0221] refer to Figure 26 A plurality of third connection passages CP3 extending from the third nozzle passage NP3 toward the third nozzle NZ3 may be defined in the nozzle body part NBD. A third opening OP3 may be defined in the third nozzle NZ3 so as to be continuous with the third connection passages CP3.

[0222] refer to Figure 27 A plurality of fourth connection passages CP4 extending from the fourth nozzle passage NP4 toward the fourth nozzle NZ4 may be defined in the nozzle body part NBD. A fourth opening OP4 may be defined in the fourth nozzle NZ4 so as to be continuous with the fourth connection passages CP4.

[0223] refer to Figures 24 to 27 , the first connecting channel CP1, the second connecting channel CP2, the third connecting channel CP3 and the fourth connecting channel CP4 can be repeatedly arranged in the order of the first connecting channel CP1, the second connecting channel CP2, the third connecting channel CP3 and the fourth connecting channel CP4, because the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4 are repeatedly arranged in the order of the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4.

[0224] Figure 28 is a view illustrating a configuration of an evaporation device according to an embodiment. Figure 29 To be able to use Figure 28 Cross-sectional view of a light-emitting element formed using the evaporation apparatus illustrated in FIG.

[0225] Figure 28 For Figure 14 Corresponding side view.

[0226] refer to Figure 28 ,Apart from Figure 1In addition to the evaporation apparatus DPA illustrated in FIG, the evaporation apparatus DPA-2 may further include a fifth deposition source SC5 and a fifth nozzle NZ5. The fifth deposition source SC5 may be spaced apart from the first deposition source SC1 and the second deposition source SC2 in the second direction DR2. The first deposition source SC1 and the second deposition source SC2 may be disposed between the body part BDP and the fifth deposition source SC5. A fifth deposition material DM5 may be accommodated in the fifth deposition source SC5.

[0227] The fifth nozzle NZ5 may be connected to an upper end of the fifth deposition source SC5 . Basically, a plurality of fifth nozzles NZ5 may be arranged in the first direction and may be provided on the fifth deposition source SC5 .

[0228] refer to Figure 28 and Figure 29 The fifth deposition material DM5 may include a material for forming the auxiliary hole transport layer BIL. The fifth deposition material DM5 evaporated in the fifth deposition source SC5 may be dispensed onto the substrate SUB through the fifth nozzle NZ5. The dispensing angle of the fifth deposition material DM5 may be limited by an angle limiting plate ALP-1 disposed above the fifth deposition source SC5.

[0229] The auxiliary hole transport layer BIL may be formed on the hole control layer HCL before forming the emission layer EML. The substrate SUB and the mask MK may be moved in the first direction DR, and a fifth deposition material DM5 may be provided on the substrate SUB. Thereafter, a deposition material DM may be provided on the substrate SUB. Thus, the auxiliary hole transport layer BIL may be formed on the hole control layer HCL, and the emission layer EML may be formed thereafter.

[0230] The auxiliary hole transport layer BIL and the emission layer EML may be formed through one process using an evaporation apparatus DPA-2.

[0231] Figure 30 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0232] Figure 30 For Figure 5 The following description will focus on the corresponding plan view. Figure 5 The evaporation device DPA and Figure 30 The differences between the evaporation apparatus DPA-3 illustrated in FIG.

[0233] refer to Figure 30The first deposition source SC1, the second deposition source SC2, and the third deposition source SC3 may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may protrude upward from the upper end of the nozzle body part NBD and may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may be repeatedly arranged in the first direction DR1 in the order of the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3.

[0234] The first, second, and third tubes PP1, PP2, and PP3 may be connected to the first, second, and third deposition sources SC1, SC2, and SC3, respectively. The first, second, and third tubes PP1, PP2, and PP3 may be connected to the nozzle body part BDP ( Figure 31 example in).

[0235] The first tube PP1 may include a first-first tube PP1-1 connected to the first deposition source SC1 and a first-second tube PP1-2 connected to the body part BDP. The second tube PP2 may include a second-first tube PP2-1 connected to the second deposition source SC2 and a second-second tube PP2-2 connected to the body part BDP. The third tube PP3 may include a third-first tube PP3-1 connected to the third deposition source SC3 and a third-second tube PP3-2 connected to the body part BDP.

[0236] The evaporation apparatus DPA-3 may further include a fourth deposition source SC4-1 and a plurality of fourth nozzles NZ4-1 connected to an upper end of the fourth deposition source SC4-1. The fourth deposition source SC4-1 may be spaced apart from the body part BDP and the nozzle body part NBD in the second direction DR2. The body part BDP and the nozzle body part NBD may be disposed between the first, second, and third deposition sources SC1, SC2, and SC3, and the fourth deposition source SC4-1. The fourth nozzles NZ4-1 may be arranged in the first direction DR1.

[0237] The first deposition material DM1, the second deposition material DM2, and the third deposition material DM3 may be contained in the first deposition source SC1, the second deposition source SC2, and the third deposition source SC3, and the fourth deposition material DM4 may be contained in the fourth deposition source SC4-1.

[0238] Figure 31 For along Figure 30 A cross-sectional view taken along line VIII-VIII' illustrated in FIG.

[0239] refer to Figure 30 and Figure 31The body part BDP may include a first portion PT1, a second portion PT2, and a third portion PT3 arranged in the second direction DR2. The first-second tube PP1-2 of the first tube PP1 may be connected to the lower end of the first portion PT1, the second tube PP2-2 of the second tube PP2 may be connected to the lower end of the second portion PT2, and the third-second tube PP3-2 of the third tube PP3 may be connected to the lower end of the third portion PT3.

[0240] The first tube passage PI1 defined in the first-second tube PP1-2, the first passage P1 defined in the first portion PT1, and the first nozzle passage NP1 defined in the nozzle body component NBD may be defined continuously. The second tube passage PI2 defined in the second-second tube PP2-2, the second passage P2 defined in the second portion PT2, and the second nozzle passage NP2 defined in the nozzle body component NBD may be defined continuously. The third tube passage PI3 defined in the third-second tube PP3-2, the third passage P3 defined in the third portion PT3, and the third nozzle passage NP3 defined in the nozzle body component NBD may be defined continuously.

[0241] Figures 32 to 34 As an example, Figure 30 A view of the nozzle body component and the cross-sectional configuration of the first nozzle, the second nozzle and the third nozzle when viewed in the first direction.

[0242] Figures 32 to 34 For Figure 10 and Figure 11 Corresponding cross-sectional view. Figure 32 is a cross-sectional view of the first nozzle NZ1 when viewed in the first direction DR1, Figure 33 is a cross-sectional view of the second nozzle NZ2 when viewed in the first direction DR1, and Figure 34 4 is a cross-sectional view of the third nozzle NZ3 when viewed in the first direction DR1 .

[0243] refer to Figure 32 , a first connection channel CP1 extending from the first nozzle channel NP1 toward the first opening OP1 of the first nozzle NZ1 may be defined in the nozzle body part NBD. The first opening OP1 may be defined to be continuous with the first connection channel CP1. Figure 32 , the second connection channel CP2 and the third connection channel CP3 are illustrated by dotted lines.

[0244] refer to Figure 33 , a second connection channel CP2 extending from the second nozzle channel NP2 toward the second opening OP2 of the second nozzle NZ2 may be defined in the nozzle body part NBD. The second opening OP2 may be defined to be continuous with the second connection channel CP2. Figure 33 , the first connection channel CP1 and the third connection channel CP3 are illustrated by dotted lines.

[0245] refer to Figure 34 A third connection passage CP3 extending from the third nozzle passage NP3 toward the third opening OP3 of the third nozzle NZ3 may be defined in the nozzle body part NBD. The third opening OP3 may be defined to be continuous with the third connection passage CP3. Figure 34 , the first connection channel CP1 and the second connection channel CP2 are illustrated by dotted lines.

[0246] Figures 35 to 37 As an example, Figure 30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when viewed in the second direction.

[0247] Figures 35 to 37 For Figure 12 and Figure 13 The corresponding cross-sectional view. Figures 35 to 37 Example in Figure 30 Cross sections of six nozzles NZ among the nozzles NZ illustrated in FIG.

[0248] Figure 35 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, Figure 36 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2, and Figure 37 4 is a cross-sectional view of the third opening OP3 and the third connecting channel CP3.

[0249] refer to Figure 35 , a plurality of first connection channels CP1 extending from the first nozzle channel NP1 toward the first opening OP1 of the first nozzle NZ1 may be defined in the nozzle body part NBD.

[0250] refer to Figure 36 , a plurality of second connection channels CP2 extending from the second nozzle channel NP2 toward the second opening OP2 of the second nozzle NZ2 may be defined in the nozzle body part NBD.

[0251] refer to Figure 37 , a plurality of third connection passages CP3 extending from the third nozzle passage NP3 toward the third opening OP3 of the third nozzle NZ3 may be defined in the nozzle body part NBD.

[0252] refer to Figures 35 to 37 , the first connecting channel CP1, the second connecting channel CP2 and the third connecting channel CP3 can be repeatedly arranged in the order of the first connecting channel CP1, the second connecting channel CP2 and the third connecting channel CP3, because the first nozzle NZ1, the second nozzle NZ2 and the third nozzle NZ3 are repeatedly arranged in the order of the first nozzle NZ1, the second nozzle NZ2 and the third nozzle NZ3.

[0253] Figure 38 As an example, the deposited material is Figure 30 FIG. 4 is a diagram illustrating a distribution of the evaporation device onto a substrate.

[0254] Figure 38 : is a side view of the evaporation device when viewed in the first direction DR1. Figure 38 The side surface of the evaporation apparatus DPA-3 in a state where the third nozzle NZ3 and the third deposition source SC3 are viewed is illustrated, and for convenience of description, reference numerals of the first and second nozzles NZ1 and NZ2 and the first and second deposition sources SC1 and SC2 are illustrated together.

[0255] refer to Figure 30 and Figure 38 The first, second, and third deposition materials DM1, DM2, and DM3 may be dispensed from the first, second, and third nozzles NZ1, NZ2, and NZ3 toward the substrate SUB. The fourth deposition material DM4 evaporated in the fourth deposition source SC4-1 may be dispensed toward the substrate SUB through the fourth nozzle NZ4-1.

[0256] The fourth nozzle NZ4-1 may be disposed obliquely toward the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3. In this case, a deposition area (not shown in the reference numerals) on the substrate SUB provided with the first deposition material DM1, the second deposition material DM2, and the third deposition material DM3 dispensed from the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may be substantially the same as a deposition area (not shown in the reference numerals) on the substrate SUB provided with the fourth deposition material DM4 dispensed from the fourth nozzle NZ4-1.

[0257] exist Figure 18 In the embodiment, the first deposition material DM1 and the second deposition material DM2 dispensed from the first nozzle NZ1 and the second nozzle NZ2 may be provided on the same first deposition area DA1. For example, the first deposition material M1 and the second deposition material M2 may be dispensed onto the substrate SUB in a selectable ratio.

[0258] Likewise, even in Figure 38 In the embodiment, the first deposition material DM1, the second deposition material DM2, the third deposition material DM1 and the fourth deposition material DM4 can be provided on the same deposition area. Therefore, the first deposition material DM1, the second deposition material DM2, the third deposition material DM1 and the fourth deposition material DM4 can be provided on the substrate SUB in a selectable ratio.

[0259] Figure 39 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment.

[0260] Figure 39 For Figure 5 The following description will focus on the corresponding plan view. Figure 5 The evaporation device DPA and Figure 39 The differences between the evaporation apparatus DPA-4 illustrated in FIG.

[0261] refer to Figure 39 The first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may be arranged in the first direction DR1. The evaporation apparatus DPA-4 may be substantially the same as the evaporation apparatus DPA except for the arrangement of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4.

[0262] For example, Figure 9 As illustrated in FIG, a first pipe PP1, a second pipe PP2, a third pipe PP3, and a fourth pipe PP4 may be connected to the first portion PT1, the second portion PT2, the third portion PT3, and the fourth portion PT4 of the body part BDP, respectively. Figure 10 and Figure 11 As illustrated in FIG, the first to fourth passages P1 to P4 may be defined in the first to fourth portions PT1 to PT4 of the body part BDP, and the first to fourth nozzle passages NP1 to NP4 and the first to fourth connecting passages CP1 to CP4 may be defined in the nozzle body part NBD.

[0263] Figure 40 FIG. 1 is a diagram illustrating a planar configuration of an evaporation device according to an embodiment. Figure 41 As an example, the deposited material is Figure 40 FIG. 4 is a diagram illustrating a distribution of the evaporation device onto a substrate.

[0264] Figure 40 For Figure 5 Corresponding plan diagram. Figure 41 For Figure 38 Corresponding side view. Figure 41 The following description will focus on Figure 5 The evaporation device DPA and Figure 40 The differences between the evaporation apparatus DPA-5 illustrated in FIG.

[0265] refer to Figure 40 and Figure 41The main body part BDP-1 may include a first main body part BDP1 and a second main body part BDP2. The nozzle main body part NBD-1 may include a first nozzle main body part NBD1 provided on the first main body part BDP1 and a second nozzle main body part NBD2 provided on the second main body part BDP2. Basically, the first main body part BDP1 and the second main body part BDP2 and the first nozzle main body part NBD1 and the second nozzle main body part NBD2 may correspond to Figure 5 The main body part BDP illustrated in FIG is divided into two parts and Figure 5 The nozzle body part NBD illustrated in FIG. 1 is a structure divided into two parts.

[0266] For example, the structure of the first body part BDP1 may substantially correspond to that of the body part BDP, wherein the first channel P1 and the second channel P2 are located in the Figures 7 to 11 The structure of the second body part BDP2 may substantially correspond to that of the body part BDP, wherein the third channel P3 and the fourth channel P4 are defined in Figures 7 to 11 The third part PT3 and the fourth part PT4.

[0267] Thus, the first and second pipes PP1 and PP2 may be connected to the first body part BDP1, and the third and fourth pipes PP3 and PP4 may be connected to the second body part BDP2.

[0268] The structure of the first nozzle body part NBD1 may substantially correspond to that of the nozzle body part NBD in which the first nozzle channel NP1, the second nozzle channel NP2, the first connection channel CP1, and the second connection channel CP2 are defined. Figures 7 to 11 The structure of the second nozzle body part NBD2 may substantially correspond to that of the nozzle body part NBD, wherein the third nozzle passage NP3, the fourth nozzle passage NP4, the third connection passage CP3 and the fourth connection passage CP4 are defined in Figures 7 to 11 Part of.

[0269] Therefore, the first and second nozzles NZ1 and NZ2 may protrude upward from the upper end of the first nozzle body part NBD1 , and the third and fourth nozzles NZ3 and NZ4 may protrude upward from the upper end of the second nozzle body part NBD2 .

[0270] The first body part BDP1 may be disposed between the first and second deposition sources SC1 and SC2 and the second body part BDP2 in the second direction DR2. The first nozzle body part NBD1 may be disposed between the first and second deposition sources SC1 and SC2 and the second nozzle body part NBD2 in the second direction DR2.

[0271] The second body part BDP2 may be disposed between the first body part BDP1 and the third and fourth deposition sources SC3 and SC4 in the second direction DR2. The second nozzle body part NBD2 may be disposed between the first nozzle body part NBD1 and the third and fourth deposition sources SC3 and SC4 in the second direction DR2.

[0272] refer to Figure 41 The first and second nozzles NZ1 and NZ2, as well as the third and fourth nozzles NZ3 and NZ4, may be disposed obliquely to face each other. The first and second deposition materials DM1 and DM2 may be dispensed from the first and second nozzles NZ1 and NZ2 toward the substrate SUB. The third and fourth deposition materials DM3 and DM4 may be dispensed from the third and fourth nozzles NZ3 and NZ4 toward the substrate SUB.

[0273] In the case where the first and second nozzles NZ1 and NZ2 and the third and fourth nozzles NZ3 and NZ4 are arranged to face each other at an angle, a deposition area (not shown in reference numerals) on the substrate SUB where the first and second deposition materials DM1 and DM2 dispensed from the first and second nozzles NZ1 and NZ2 are provided can be substantially the same as a deposition area (not shown in reference numerals) on the substrate SUB where the third and fourth deposition materials DM3 and DM4 dispensed from the third and fourth nozzles NZ3 and NZ4 are provided. In this case, as described above, the first, second, third, and fourth deposition materials DM1, DM2, DM3, and DM4 can be provided on the substrate SUB in selectable proportions.

[0274] Figure 42 FIG. 1 is a diagram illustrating how deposition material is dispensed onto a substrate from an evaporation apparatus according to an embodiment.

[0275] Figure 42 For Figure 38 Corresponding side view. Figure 42 3 is a side view of the evaporation device when viewed in the first direction DR1.

[0276] refer to Figure 42 The evaporation apparatus DPA-6 may include a first deposition source SC1-1, a second deposition source SC2-1, a third deposition source SC3-1, a fourth deposition source SC4-2, and a plurality of first nozzles NZ1-1, a second nozzle NZ2-1, a third nozzle NZ3-1, and a fourth nozzle NZ4-2.

[0277] The first deposition source SC1-1, the second deposition source SC2-1, the third deposition source SC3-1, and the fourth deposition source SC4-2 may be arranged in the second direction DR2. The first deposition material DM1 may be contained in the first deposition source SC1-1, and the second deposition material DM2 may be contained in the second deposition source SC2-1. The third deposition material DM3 may be contained in the third deposition source SC3-1, and the fourth deposition material DM4 may be contained in the fourth deposition source SC4-2.

[0278] The first nozzle NZ1-1 may be provided on the first deposition source SC1-1. Although one first nozzle NZ1-1 is illustrated in the side view, a plurality of first nozzles NZ1-1 arranged in the first direction DR1 may be provided on the first deposition source SC1-1. The second nozzle NZ2-1 may be provided on the second deposition source SC2-1. Although one second nozzle NZ2-1 is illustrated in the side view, a plurality of second nozzles NZ2-1 arranged in the first direction DR1 may be provided on the second deposition source SC2-1.

[0279] The third nozzle NZ3-1 may be provided on the third deposition source SC3-1. Although one third nozzle NZ3-1 is illustrated in the side view, a plurality of third nozzles NZ3-1 arranged in the first direction DR1 may be provided on the third deposition source SC3-1. The fourth nozzle NZ4-2 may be provided on the fourth deposition source SC4-2. Although one fourth nozzle NZ4-2 is illustrated in the side view, a plurality of fourth nozzles NZ4-2 arranged in the first direction DR1 may be provided on the fourth deposition source SC4-2.

[0280] The second nozzle NZ2-1 and the third nozzle NZ3-1 may be arranged to face each other at an angle and may be symmetrical to each other. The first nozzle NZ1-1 and the fourth nozzle NZ4-2 may be arranged to face each other at an angle and may be symmetrical to each other. The slopes of the first nozzle NZ1-1 and the fourth nozzle NZ4-2 may be greater than the slopes of the second nozzle NZ2-1 and the third nozzle NZ3-1.

[0281] According to the structure of the first nozzle NZ1-1, the second nozzle NZ2-1, the third nozzle NZ3-1, and the fourth nozzle NZ4-2, a deposition area (not shown in the reference numerals) on the substrate SUB in which the first deposition material DM1 dispensed from the first nozzle NZ1-1 is provided, a deposition area (not shown in the reference numerals) on the substrate SUB in which the second deposition material DM2 dispensed from the second nozzle NZ2-1 is provided, a deposition area (not shown in the reference numerals) on the substrate SUB in which the third deposition material DM3 dispensed from the third nozzle NZ3-1 is provided, and a deposition area (not shown in the reference numerals) on the substrate SUB in which the fourth deposition material DM4 dispensed from the fourth nozzle NZ4-2 is provided may be substantially the same as each other. In this case, as described above, the first deposition material DM1, the second deposition material DM2, the third deposition material DM3, and the fourth deposition material DM4 may be provided on the substrate SUB in selectable proportions.

[0282] According to various embodiments, the nozzles of the evaporation devices arranged in different rows may be arranged as close to each other as possible to contact each other. Therefore, the mixing ratio between the deposition materials provided on the substrate may be constant.

[0283] While the present disclosure has been described with reference to the embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made thereto without departing from the spirit and scope of the disclosure, and as set forth in the following claims.

Claims

1. An evaporation device, characterized in that: include: First sedimentation source; a second deposition source, arranged together with the first deposition source in a first direction; a main body component spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, the main body component including a first portion and a second portion arranged in the second direction; a nozzle body component, disposed on the body component; a first pipe connected to a side surface of the first deposition source facing the main body part and the nozzle main body part and a lower end of the first portion; a second pipe connected to a side surface of the second deposition source facing the main body part and the nozzle main body part and a lower end of the second portion; a first nozzle protruding upward from the nozzle body member; as well as The second nozzle protrudes upward from the nozzle body component.

2. The evaporation device according to claim 1, characterized in that The first nozzle and the second nozzle are arranged in the first direction, and The first tube comprises: a first-first tube connected to an upper portion of the side surface of the first deposition source and extending downward; and a first-second tube connected to the lower portion of the first-first tube and the lower end of the first portion, and The second tube comprises: a second-first tube connected to an upper portion of the side surface of the second deposition source and extending downward; and A second-second tube is connected to the lower portion of the second-first tube and the lower end of the second portion.

3. The evaporation device according to claim 1, characterized in that A first tube channel is defined in the first tube, and a first channel continuous with the first tube channel is defined in the first portion, and a second tube passage is defined in the second tube, and a second passage continuous with the second tube passage is defined in the second portion, wherein a first nozzle channel continuous with the first channel and a second nozzle channel continuous with the second channel are defined in the nozzle body member, and A first opening continuous with the first nozzle passage is defined in the first nozzle, and a second opening continuous with the second nozzle passage is defined in the second nozzle.

4. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: a third deposition source; and a fourth deposition source, arranged together with the third deposition source in the first direction, in The third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and The main body part and the nozzle main body part are disposed between the first deposition source, the second deposition source, and the third deposition source and the fourth deposition source. wherein different deposition materials are respectively contained in the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source, wherein the main body component further includes a third portion and a fourth portion arranged together with the first portion and the second portion in the second direction, and The evaporation device further comprises: a third pipe connected to a side surface of the third deposition source facing the main body part and the nozzle main body part and a lower end of the third portion; a fourth pipe connected to a side surface of the fourth deposition source facing the main body part and the nozzle main body part and a lower end of the fourth portion; a third nozzle protruding upward from the nozzle body member; and a fourth nozzle projecting upwardly from the nozzle body member; and wherein a third tube passage is defined in the third tube, and a third passage continuous with the third tube passage is defined in the third portion, a fourth tube passage is defined in the fourth tube, and a fourth passage continuous with the fourth tube passage is defined in the fourth portion, A third nozzle channel continuous with the third channel and a fourth nozzle channel continuous with the fourth channel are defined in the nozzle body member, and A third opening continuous with the third nozzle passage is defined in the third nozzle, and a fourth opening continuous with the fourth nozzle passage is defined in the fourth nozzle.

5. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: a third deposition source; and a fourth deposition source, arranged together with the third deposition source in the first direction, in The third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and The main body part and the nozzle main body part are disposed between the first deposition source, the second deposition source, and the third deposition source and the fourth deposition source. wherein the main body component further includes a third portion and a fourth portion arranged together with the first portion and the second portion in the second direction, and The evaporation device further comprises: a third pipe connected to a side surface of the third deposition source facing the main body part and the nozzle main body part and a lower end of the third portion; a fourth pipe connected to a side surface of the fourth deposition source facing the main body part and the nozzle main body part and a lower end of the fourth portion; a third nozzle protruding upward from the nozzle body member; and a fourth nozzle protruding upward from the nozzle body component; wherein the third nozzle and the fourth nozzle are arranged in the first direction and are respectively arranged adjacent to the first nozzle and the second nozzle in the second direction, and The third nozzle and the fourth nozzle directly contact the first nozzle and the second nozzle respectively in the second direction.

6. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: a third deposition source; and a fourth deposition source, arranged together with the third deposition source in the first direction, in The third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and The main body part and the nozzle main body part are disposed between the first deposition source, the second deposition source, and the third deposition source and the fourth deposition source. wherein the main body component further includes a third portion and a fourth portion arranged together with the first portion and the second portion in the second direction, and The evaporation device further comprises: a third pipe connected to a side surface of the third deposition source facing the main body part and the nozzle main body part and a lower end of the third portion; a fourth pipe connected to a side surface of the fourth deposition source facing the main body part and the nozzle main body part and a lower end of the fourth portion; a third nozzle protruding upward from the nozzle body member; and a fourth nozzle projecting upwardly from the nozzle body member; and The first nozzle, the second nozzle, the third nozzle and the fourth nozzle are arranged in the first direction.

7. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: tertiary sediment source; a fourth deposition source, arranged together with the third deposition source in the first direction, and a fifth deposition source spaced apart from the first deposition source and the second deposition source in the second direction; wherein wherein the third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and The main body part and the nozzle main body part are disposed between the first deposition source, the second deposition source, and the third deposition source and the fourth deposition source. wherein the main body component further includes a third portion and a fourth portion arranged together with the first portion and the second portion in the second direction, and The evaporation device further comprises: a third pipe connected to a side surface of the third deposition source facing the main body part and the nozzle main body part and a lower end of the third portion; a fourth pipe connected to a side surface of the fourth deposition source facing the main body part and the nozzle main body part and a lower end of the fourth portion; a third nozzle protruding upward from the nozzle body component; a fourth nozzle protruding upward from the nozzle body member; and a fifth nozzle connected to the upper end of the fifth deposition source, and The first deposition source and the second deposition source are arranged between the main body component and the fifth deposition source.

8. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: a third deposition source, disposed together with the first deposition source and the second deposition source in the first direction; a third tube connected to the third deposition source and the third portion of the main body component; a third nozzle protruding upward from the nozzle body component; a fourth deposition source spaced apart from the nozzle body part in the second direction; and a plurality of fourth nozzles connected to the upper end of the fourth deposition source and arranged in the first direction, The main body component is disposed between the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source. wherein the first nozzle, the second nozzle and the third nozzle are arranged in the first direction, and The plurality of fourth nozzles are obliquely disposed to face the first nozzle, the second nozzle, and the third nozzle.

9. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: tertiary sediment source; Fourth sediment source; a third tube connected to the third deposition source and the main body component; a fourth tube connected to the fourth deposition source and the main body component; a third nozzle protruding upward from the nozzle body member; and a fourth nozzle, projecting upward from the nozzle body member, The first deposition source, the second deposition source, the third deposition source, and the fourth deposition source are arranged in the first direction.

10. The evaporation device according to claim 1, characterized in that The evaporation device further comprises: tertiary sediment source; a fourth deposition source, arranged together with the third deposition source in the first direction; a third tube connected to the third deposition source; a fourth tube connected to the fourth deposition source; and The third nozzle and the fourth nozzle are arranged in the first direction, wherein The main body component includes: a first body member connected to the first tube and the second tube; and a second body component connected to the third tube and the fourth tube, The nozzle body component comprises: a first nozzle body part from which the first nozzle and the second nozzle protrude, the first nozzle body part being disposed on the first body part; and A second nozzle body component is provided on the second body component, The third nozzle and the fourth nozzle protrude upward from the second nozzle body part, The first body component is disposed between the first deposition source, the second deposition source, and the second body component in the second direction, and the second body component is disposed between the first body component and the third deposition source and the fourth deposition source in the second direction, and The first nozzle and the second nozzle as well as the third nozzle and the fourth nozzle are arranged to face each other at an angle.

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