Electron emitter
By patterning the electron emitter composed of a light source and a lens unit, an electron beam with an optical pattern is formed, which solves the problem of low electron beam lithography efficiency in the prior art, and achieves rapid formation of microstructured electron beam lithography.
Patent Information
- Application Number
- CN202422640140.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-08-19
- Estimated Expiration
- 2034-10-31
AI Technical Summary
In the existing electron beam lithography technology, point-by-point scanning exposure method leads to inefficiency and cannot quickly form tiny structures.
An electron emitter composed of a patterned light source and a lens unit is used to form an optical pattern with light and dark changes through light beam modulation, and an external photoelectric effect is formed on the surface of the photoelectric material unit to directly generate an electron beam with an optical pattern for photolithography of an electron optical system.
The efficiency of electron beam lithography is greatly improved, the inefficiency problem of point-by-point scanning exposure is avoided, and the rapid formation of microstructures is achieved.
Smart Images
Figure CN223244975U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of electron beam lithography, in particular to an electron emitter. Background Art
[0002] Electron beam lithography is a high-precision exposure technique commonly used in integrated circuit manufacturing. It uses a high-energy electron beam to expose a photoresist layer, thereby forming the desired microstructures on the chip surface. However, the traditional electron beam lithography process is slow and inefficient due to its point-by-point exposure method. Utility Model Content
[0003] The utility model provides an electron emitter to solve one or more technical problems existing in the prior art, and at least provides a beneficial choice or creates conditions.
[0004] The utility model solves the technical problem by providing an electron emitter, comprising: a patterned light source, a lens unit and a photoelectric material unit; the patterned light source comprises a light source and a pattern generator, the lens unit is arranged between the pattern generator and the photoelectric material unit, and the pattern generator is used to modulate the light beam emitted by the light source; wherein, after the light beam emitted by the light source is modulated by the pattern generator, an optical pattern with light and dark variations is generated, and after the optical pattern is magnified and imaged by the lens unit, it is irradiated on the surface of the photoelectric material unit to generate an external photoelectric effect, thereby forming an electron beam with the optical pattern.
[0005] Further, the electron beam with the optical pattern is used to be injected into an electron optical system, so that the electron optical system performs a photolithography operation according to the electron beam with the optical pattern.
[0006] Furthermore, the electron emitter further comprises an external power supply, wherein a negative electrode of the external power supply is connected to the photoelectric material unit, and a positive electrode of the external power supply is connected to the electron optical system.
[0007] Furthermore, the target angle between the optical axis direction of the optical pattern and the surface of the photoelectric material unit is 15°-60°, so that the electrons excited by the photoelectric material unit during the external photoelectric effect are not blocked by the optical pattern.
[0008] Furthermore, the irradiation path of the optical pattern is: starting from the pattern generator, passing through the lens unit and irradiating onto the surface of the photoelectric material unit.
[0009] Furthermore, the lens unit includes a first lens and a second lens, and the first lens and the second lens are arranged in sequence and spaced apart in the illumination path of the optical pattern; the focal length of the first lens and the pattern generator is a first preset focal length, the focal length of the second lens and the pattern generator is a second preset focal length, and the focal length between the first lens and the second lens is the sum of the first preset focal length and the second preset focal length.
[0010] Furthermore, the magnification of the optical pattern after passing through the first lens and the second lens is the quotient of the second preset focal length and the first preset focal length. The optical pattern after being magnified by the first lens and the second lens is irradiated on the surface of the photoelectric material unit at the target angle to excite electrons in the photoelectric material unit and form an electron beam having the optical pattern under the action of the external electric field of the external power supply.
[0011] The beneficial effects of the present invention are as follows: a light beam emitted by a light source is modulated by a pattern generator to form an optical pattern with varying brightness; this optical pattern is magnified and imaged by a lens unit, then irradiated onto a photoelectric material unit, stimulating electrons in the photoelectric material unit to produce an external photoelectric effect, thereby forming an electron beam with the optical pattern. This patterned electron beam is then fed into an electron optical system, allowing electron beam lithography to be performed directly based on the electron beam with the optical pattern, eliminating the need for point-by-point scanning of the electron beam as in the prior art. Therefore, the present invention significantly improves the efficiency of electron beam lithography. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following is a brief description of the drawings required for describing the embodiments. Obviously, the drawings described are only part of the embodiments of the present invention, not all of them. Those skilled in the art can also derive other design solutions and drawings based on these drawings without inventive effort.
[0013] Figure 1 A specific working flow diagram of the electronic emitter proposed in an embodiment of the present utility model;
[0014] Figure 2 This is a structural diagram of the specific positions of the patterned light source, lens unit, and optoelectronic material unit proposed in an embodiment of the present utility model;
[0015] Figure 3 This is a system framework diagram of the electronic emitter proposed in an embodiment of the present utility model. DETAILED DESCRIPTION
[0016] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.
[0017] It should be noted that although the system diagrams illustrate functional module divisions and the flowcharts illustrate logical sequences, in certain circumstances, the steps shown or described may be performed in a sequence that differs from the module divisions in the system or the sequence in the flowcharts. The terms "first," "second," and so on, in the specification, claims, and drawings, are used to distinguish similar items and are not necessarily used to describe a specific sequence or precedence.
[0018] The purpose of this utility model is to provide an extremely convenient electron beam lithography method, primarily by improving the electron emission source. The existing method uses point-by-point scanning exposure, which requires scanning the electron beam point by point across the chip surface to form the desired pattern. This process requires processing each pixel, and the number of pixels is usually very large, resulting in long exposure times.
[0019] The method of the present invention does not require point-by-point scanning to form a pattern. Instead, the pattern generator in the electron emitter can modulate the light beam emitted by the light source to form the desired pattern, and then irradiate the optical pattern on the surface of the photoelectric material unit to form an electron beam with an optical pattern. The electron beam with the optical pattern is sent into the electron optical system to perform effective electron beam lithography. It should be noted that Figure 1 and Figure 2 The patterned image shown in is the optical pattern after being magnified and imaged by the lens unit in the embodiment of the present invention.
[0020] Therefore, the electron emitter provided by the present invention can send the optical pattern into the electron optical system for electron beam lithography processing, so that the required tiny structure can be quickly formed on the surface of the photoresist, without the need for the slow exposure speed caused by the point-by-point scanning exposure method in the prior art, which leads to the problem of low overall efficiency of electron beam lithography.
[0021] refer to Figure 1 、 Figure 2 、 Figure 3 , Figure 1 This is the specific working process diagram of this electronic transmitter; Figure 2 The specific position structure diagram of the pattern generator, lens unit and optoelectronic material unit; Figure 3 This is the system framework diagram of the electronic emitter.
[0022] According to one aspect of the utility model, the present application provides an electron emitter, comprising a patterned light source, a lens unit and a photoelectric material unit; the patterned light source comprises a light source and a pattern generator, the lens unit is arranged between the pattern generator and the photoelectric material unit, and the pattern generator is used to modulate the light beam emitted by the light source; wherein, after the light beam emitted by the light source is modulated by the pattern generator, an optical pattern with light and dark changes is generated, and after the optical pattern is magnified and imaged by the lens unit, it is irradiated on the surface of the photoelectric material unit to generate an external photoelectric effect, thereby forming an electron beam with the optical pattern.
[0023] Specifically, Figure 1 As shown, after the light source is modulated by a pattern generator to form an optical pattern, the optical pattern passes through a lens unit for magnification and imaging. The magnified optical pattern is then irradiated onto the surface of the photoelectric material unit. The photoelectric material unit is connected to the negative terminal of an external power source, and the electron optical system is connected to the positive terminal of the external power source. Therefore, under the influence of an external electric field, electrons excited by the optical pattern in the photoelectric material unit are accelerated toward the positive terminal of the external power source, forming an electron beam with an optical pattern. This electron beam is then fed into the electron optical system for electron beam lithography. This eliminates the need for point-by-point scanning exposure to form the desired pattern, as in the prior art, and thus addresses the low efficiency of electron beam lithography caused by prior methods.
[0024] In one embodiment of the present invention, the pattern generator can be a variety of refractive or display devices, such as a liquid crystal display (LCD), a liquid crystal on silicon (LCoS) microdisplay chip, or a digital micromirror device (DMD). This embodiment of the present invention is described in detail using a digital micromirror device (DMD) as an example. The DMD, based on semiconductor manufacturing technology, consists of a high-speed digital optical reflective switch array. The imaging pattern and its characteristics are determined by controlling the fixed rotation and time-domain response of micromirror units (a DMD comprises multiple micromirror units) (determining the reflection angle and dwell time of light).
[0025] The pattern generator can be programmed with a desired pattern in advance using a computer program. During operation, the pattern generator modulates the light beam emitted by the light source into the pre-set pattern, which is then magnified by the lens unit and imaged onto the surface of the optoelectronic material unit in the form of an optical pattern.
[0026] Each micromirror unit is an independent entity and can be flipped to different angles (positive or negative), so the light reflected by the micromirror unit can appear at different angles. Each micromirror unit can be flipped at three preset angles, corresponding to three stable states: +12° (on), 0° (no signal), and -12° (off). When a "1" signal is given to the micromirror unit, it deflects +12 degrees. The reflected light passes through the lens unit and is imaged on the photoelectric material unit exactly along the optical axis, forming a bright pixel. When the mirror deviates from the equilibrium position by -12 degrees (signal "0"), the reflected light cannot pass through the lens unit, resulting in a dark pixel. The binary "1" and "0" states of the control signal correspond to the "on" and "off" states of the micromirror, respectively.
[0027] Therefore, the light beam is refracted by the multiple micro-mirror units to form multiple pixels, and then magnified by the lens unit to illuminate and image on the surface of the photoelectric material unit, thereby forming a patterned electron beam.
[0028] In one embodiment of the present invention, the electron beam having the optical pattern is used to be injected into an electron optical system, so that the electron optical system performs a photolithography operation according to the electron beam having the optical pattern.
[0029] Specifically, under the influence of an external electric field from an external power source, the photoelectric material unit can accelerate electrons excited by the external photoelectric effect on the surface of the photoelectric material unit, thereby forming an electron beam with an optical pattern. The electron beam with an optical pattern is then injected into the electron optical system, which then performs a photolithographic process on the photoresist surface based on the electron beam with the optical pattern.
[0030] In one embodiment of the present invention, the electron emitter further includes an external power supply, a negative electrode of the external power supply is connected to the photoelectric material unit, and a positive electrode of the external power supply is connected to the electron optical system.
[0031] Specifically, the external power supply can be a unit in various forms such as a battery, a switching circuit, etc., which is connected to the photoelectric material unit through the negative pole of the external power supply, and its positive pole is connected to the electron optical system. The excited electrons in the photoelectric material unit can be accelerated from the negative pole of the voltage to the positive pole of the voltage under the action of the external electric field, thereby forming an electron beam with an optical pattern.
[0032] In one embodiment of the present invention, the target angle between the optical axis direction of the optical pattern and the surface of the photoelectric material unit is 15°-60°, so that the electrons excited by the photoelectric material unit when the external photoelectric effect occurs are not blocked by the optical pattern.
[0033] Specifically, the angle at which the pattern generator is positioned is related to the optical axis of the refracted optical pattern. Therefore, the optical axis of the optical pattern must form a certain angle with the surface of the photoelectric material unit to ensure that the excited electrons form an electron beam with the optical pattern and are delivered to the electron optical system. This angle is the target angle, which ranges from 15° to 60°. This ensures that the optical pattern's optical axis forms a certain angle with the surface of the photoelectric material unit, ensuring that the optical pattern does not block electrons emitted by the photoelectric material.
[0034] In one embodiment of the present application, the wavelength range of the light beam emitted by the light source is within a preset wavelength range, and the wavelength range of the optical pattern modulated by the pattern generator is also within the preset wavelength range, so that the optical pattern can produce an external photoelectric effect in the photoelectric material unit. The preset wavelength range can be set based on actual needs, and in practice, can be set based on the properties of the photoelectric material unit.
[0035] In one embodiment of the present invention, the irradiation path of the optical pattern is: starting from the pattern generator, passing through the lens unit and irradiating onto the surface of the photoelectric material unit.
[0036] Specifically, the optical pattern takes the pattern generator as a starting point, passes through the lens unit and irradiates the surface of the photoelectric material unit, thereby forming an irradiation path of the optical pattern.
[0037] Ke Ru Figure 1 As shown, Figure 1 The red arrow represents the irradiation path of the optical pattern, starting from the position where the optical pattern is emitted from the pattern generator and ending at the photoelectric material unit. The optical pattern is magnified and imaged by the first and second lenses, and then irradiated onto the surface of the optical material unit.
[0038] In one embodiment of the present invention, the lens unit includes a first lens and a second lens, and the first lens and the second lens are arranged in sequence and spaced apart in the illumination path of the optical pattern; the focal length of the first lens and the pattern generator is a first preset focal length, the focal length of the second lens and the pattern generator is a second preset focal length, and the focal length between the first lens and the second lens is the sum of the first preset focal length and the second preset focal length.
[0039] Specifically, please refer to Figure 2 As shown, Figure 2 Here, f1 is the first preset focal length, f2 is the second preset focal length, and the magnification of the optical pattern after passing through the first lens and the second lens is f2 / f1, so as to magnify the pattern light beam and form an image, which is then irradiated on the surface of the photoelectric material unit. Figure 1 and 2 The patterned image shown in is the optical pattern after being magnified and imaged by the lens unit in the embodiment of the present invention.
[0040] In one embodiment of the present invention, the magnification of the optical pattern after passing through the first lens and the second lens is the quotient of the second preset focal length and the first preset focal length, and the optical pattern after being magnified by the first lens and the second lens is irradiated on the surface of the photoelectric material unit at the target angle to excite electrons in the photoelectric material unit and form an electron beam having the optical pattern under the action of the external electric field of the external power supply.
[0041] Specifically, the magnification is Figure 2 The optical pattern magnified by the first lens and the second lens is irradiated on the surface of the photoelectric material unit at the target angle to excite the electrons in the photoelectric material unit, and under the acceleration of the external electric field (i.e. Figure 1 and Figure 2 The external electric field formed by the negative voltage pole and the positive voltage pole in the electron beam is formed to form an electron beam with an optical pattern.
[0042] Further, if Figure 3 As shown, Figure 3 This is the system framework diagram of the entire electronic emitter. The light source emits a light beam which is modulated by the pattern generator to form an optical pattern composed of multiple pixels (i.e. Figure 1 and Figure 2 The patterned image shown in the figure is magnified by a lens unit and then irradiated onto the surface of an optical material unit. An electron beam with an optical pattern is formed under the action of an external electric field provided by an external power source. Finally, the electron beam with the optical pattern is sent into an electron optical system for electron beam lithography.
[0043] In summary, the present invention modulates the light beam emitted by a light source through a pattern generator to form an optical pattern with varying brightness. This optical pattern is then magnified and imaged by a lens unit, then irradiated onto a photoelectric material unit, stimulating electrons in the material unit to create an external photoelectric effect, thereby forming an electron beam with an optical pattern. This electron beam with an optical pattern can then be fed into an electron optical system for electron beam lithography based on the pattern, eliminating the need for point-by-point scanning of the electron beam as in the prior art. Therefore, the present invention significantly improves the efficiency of electron beam lithography.
[0044] The above specifically describes the preferred embodiments of the present invention, but the present invention is not limited to the embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.
Claims
1. An electron emitter, characterized in that: include: A patterned light source, a lens unit, and a photoelectric material unit; the patterned light source includes a light source and a pattern generator, the lens unit is arranged between the pattern generator and the photoelectric material unit, and the pattern generator is used to modulate the light beam emitted by the light source; wherein, after the light beam emitted by the light source is modulated by the pattern generator, an optical pattern with light and dark variations is generated, and after the optical pattern is magnified and imaged by the lens unit, it is irradiated on the surface of the photoelectric material unit to generate an external photoelectric effect, forming an electron beam with the optical pattern.
2. The electron emitter according to claim 1, wherein The electron beam having the optical pattern is used to be incident on an electron optical system, so that the electron optical system performs a photolithography operation according to the electron beam having the optical pattern.
3. The electron emitter according to claim 2, characterized in that The electron emitter further includes an external power supply, a negative electrode of the external power supply is connected to the photoelectric material unit, and a positive electrode of the external power supply is connected to the electron optical system.
4. The electron emitter according to claim 3, characterized in that The target angle between the optical axis direction of the optical pattern and the surface of the photoelectric material unit is 15°-60°, so that the electrons excited by the photoelectric material unit when the external photoelectric effect occurs are not blocked by the optical pattern.
5. The electron emitter according to claim 4, characterized in that The irradiation path of the optical pattern is: starting from the pattern generator, passing through the lens unit and irradiating the surface of the photoelectric material unit.
6. The electron emitter according to claim 5, characterized in that The lens unit includes a first lens and a second lens, and the first lens and the second lens are arranged in sequence and spaced apart in the illumination path of the optical pattern; the focal length between the first lens and the pattern generator is a first preset focal length, the focal length between the second lens and the pattern generator is a second preset focal length, and the focal length between the first lens and the second lens is the sum of the first preset focal length and the second preset focal length.
7. The electron emitter according to claim 6, characterized in that The magnification of the optical pattern after passing through the first lens and the second lens is the quotient of the second preset focal length and the first preset focal length. The optical pattern after being magnified by the first lens and the second lens is irradiated on the surface of the photoelectric material unit at the target angle to excite electrons in the photoelectric material unit and form an electron beam with the optical pattern under the action of the external electric field of the external power supply.